CN102174261A - Highly transparent electronic encapsulating adhesive - Google Patents

Highly transparent electronic encapsulating adhesive Download PDF

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Publication number
CN102174261A
CN102174261A CN 201110008175 CN201110008175A CN102174261A CN 102174261 A CN102174261 A CN 102174261A CN 201110008175 CN201110008175 CN 201110008175 CN 201110008175 A CN201110008175 A CN 201110008175A CN 102174261 A CN102174261 A CN 102174261A
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CN
China
Prior art keywords
pouring sealant
transparent electron
electron pouring
height according
hydroxy
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Pending
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CN 201110008175
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Chinese (zh)
Inventor
许少汕
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SHENZHEN CITY COCA INDUSTRIAL DEVELOPMENT Co Ltd
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SHENZHEN CITY COCA INDUSTRIAL DEVELOPMENT Co Ltd
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Priority to CN 201110008175 priority Critical patent/CN102174261A/en
Publication of CN102174261A publication Critical patent/CN102174261A/en
Pending legal-status Critical Current

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Abstract

The invention relates to the field of silica gels, in particular to a highly transparent electronic encapsulating adhesive with high light transmittance and low production cost. The adhesive is prepared by the following production steps of: 1) preparing hydroxyl-terminated polydimethylsiloxane, namely base polymer; 2) performing surface treatment on a reinforcing filler; 3) performing internal mixing to prepare a semi-finished adhesive; and 4) preparing a finished highly transparent electronic encapsulating adhesive. The invention has the advantages that: a production formula and a process are technically innovated, the conventional expensive fumed silica is discarded, precipitated silica is adopted and is subjected to surface modification by a composite treating agent (silazane, methoxysilane, hydroxyl silicone oil, water and the like) after being subjected to nano-scale dispersion so as to form an 820# electronic encapsulating adhesive with the light transmittance of 96 percent, and the light transmittance is 4 percent higher than that of the product prepared by the conventional process, namely the light energy utilization rate of components on an encapsulating surface is improved by 4 percent; and the light utilization rate is improved, namely the production cost of a part is reduced, and an obvious progress is made.

Description

High transparent electron pouring sealant
Technical field
The present invention relates to the silica gel field, especially relate to the low high transparent electron pouring sealant of a kind of high transmission rate and production cost.
Background technology
Silica gel (Silicone rubber) another name: silicon rubber can be divided into two big classes by its character and component: organic silica gel and inorganic silica gel; Can be divided into three major types by sulfuration type and sulfuration mechanism: two component condensed room temperature vulcanized silicone rubbers, dual composition addition type room temperature vulcanized silicone rubber, high-temperature silicon disulfide rubber.Water insoluble and any solvent of silica gel, nonpoisonous and tasteless, chemical property is stable, does not react with any material except that highly basic, hydrofluoric acid.The silica gel of various models forms different microvoid structures because of its manufacture method is different.The chemical composition of silica gel and physical structure have determined it to have the advantages that many other same type of material are difficult to replace: have excellent electrical insulating property, resistance to deterioration, thermostability, chemical stability and higher physical strength etc.
High transparent electron pouring sealant is a kind of product that is applied to embedding protections such as various electronic devices and components, photovoltaic, solar cell, lamp decoration, the light of emitting components on the embedding face can be reflected away efficiently, to reach best brightness effect.
There is transmittance defective on the low side in domestic existing technology, can only reach 92%, can not effectively the refraction of light of emitting components on the embedding face be gone out, and makes luminous energy loss when passing silica gel bigger than normal, reaches 8%.And with the expensive thermal silica technical matters of tradition, production cost is higher, is unfavorable for that large-scale popularization uses.
Based on the weak point of existing electron pouring sealant in manufacture craft, the inventor has designed a kind of " high transparent electron pouring sealant ".
Summary of the invention
The present invention is directed to above-mentioned the deficiencies in the prior art technical problem to be solved is: provide a kind of high transmission rate and production cost low high transparent electron pouring sealant.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of high transparent electron pouring sealant is used for various electron device product embedding protections, and the transparent electron pouring sealant of described height is made by following production stage:
1), makes base polymer through the synthesis procedure of hydroxy-end capped polydimethylsiloxane;
2), the surface treatment procedure of reinforced filling;
3), make the work in-process sizing material by the banburying operation;
4), make high transparent electron pouring sealant finished product by joining glue process.
The synthesis procedure of described hydroxy-end capped polydimethylsiloxane is at first in special reactor, drop into the D4 (prestox tetrasiloxane ring body) or the DMC (dimethyl siloxane mixed methylcyclosiloxane) of 98% content, be warming up to 60~65 ℃ of vacuum then and deviate from moisture, add various auxiliary agents (comprising initiator, hydroxyl closure agent etc.) again, generate through polyreaction, under stirring and special operational, products therefrom becomes hydroxy-end capped polydimethylsiloxane after filtration, is base polymer.
The surface treatment procedure of described reinforced filling: the white carbon black and the composite treating agent (comprising silazane, methoxy silane, hydroxy silicon oil, water etc.) that in special reactor, drop into 90% content, heat up, dewater, cool off in 145~150 ℃ after under shear conditions, handling certain hour, this several steps is repeated twice back discharging, carry out the surface treatment of reinforced filling.
Described banburying operation is to drop into the hydroxy-end capped polydimethylsiloxane of 80% content, the reinforced filling of 10% content, half reinforced filling of 10% content in kneader, after being heated to 150~160 ℃, insulation banburying in 2 hours then, under vacuum condition, taking off low molecule and promptly get the work in-process sizing material.
The described glue process of joining is the work in-process sizing material after mixing to be added auxiliary agent (comprising linking agent) stir after milling in reactor, and packing becomes high transparent electron pouring sealant finished product again after discharging is filtered.
The beneficial effect of a kind of high transparent electron pouring sealant of the present invention is:
On production formula, technology, done technical renovation, the thermal silica of abandoning tradition costliness, adopt precipitated silica, after the nano level dispersion, use composite treating agent (silazane, methoxy silane, hydroxy silicon oil, water etc.) to carry out surface modification treatment, make transmittance and reach 96% 820# electron pouring sealant, the product that makes than traditional technology has improved 4% transmittance, and the luminous energy that is about to the components and parts of embedding face has utilized 4% more.Improve the utilization ratio of light, reduced the production cost of product exactly, played the obvious improvement effect.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is technological process of production figure of the present invention.
Embodiment
With reference to Fig. 1, the present invention implements like this:
In Fig. 1, a kind of high transparent electron pouring sealant is made by following production stage:
1), makes base polymer through the synthesis procedure of hydroxy-end capped polydimethylsiloxane;
2), the surface treatment procedure of reinforced filling;
3), make the work in-process sizing material by the banburying operation;
4), make high transparent electron pouring sealant finished product by joining glue process.
The synthesis procedure of described hydroxy-end capped polydimethylsiloxane is at first in special reactor, drop into the D4 (prestox tetrasiloxane ring body) or the DMC (dimethyl siloxane mixed methylcyclosiloxane) of 98% content, be warming up to 60~65 ℃ of vacuum then and deviate from moisture, add various auxiliary agents (comprising initiator, hydroxyl closure agent etc.) again, generate through polyreaction, under stirring and special operational, products therefrom becomes hydroxy-end capped polydimethylsiloxane after filtration, is base polymer.
The surface treatment procedure of described reinforced filling: the white carbon black and the composite treating agent (comprising silazane, methoxy silane, hydroxy silicon oil, water etc.) that in special reactor, drop into 90% content, heat up, dewater, cool off in 145~150 ℃ after under shear conditions, handling certain hour, this several steps is repeated twice back discharging, carry out the surface treatment of reinforced filling.
Described banburying operation is to drop into the hydroxy-end capped polydimethylsiloxane of 80% content, the reinforced filling of 10% content, half reinforced filling of 10% content in kneader, after being heated to 150~160 ℃, insulation banburying in 2 hours then, under vacuum condition, taking off low molecule and promptly get the work in-process sizing material.
The described glue process of joining is the work in-process sizing material after mixing to be added auxiliary agent (comprising linking agent) stir after milling in reactor, and packing becomes high transparent electron pouring sealant finished product again after discharging is filtered.
The above, it only is a kind of preferred embodiment of the high transparent electron pouring sealant of the present invention, be not that technical scope of the present invention is imposed any restrictions, every foundation technical spirit of the present invention all still belongs in the scope of the technology of the present invention any trickle modification, equivalent variations and modification that top embodiment did.

Claims (8)

1. one kind high transparent electron pouring sealant is used for various electron device product embedding protections, and it is characterized in that: the transparent electron pouring sealant of described height is made by following production stage:
1), makes base polymer through the synthesis procedure of hydroxy-end capped polydimethylsiloxane;
2), the surface treatment procedure of reinforced filling;
3), make the work in-process sizing material by the banburying operation;
4), make high transparent electron pouring sealant finished product by joining glue process.
2. the transparent electron pouring sealant of height according to claim 1, the synthesis procedure that it is characterized in that described hydroxy-end capped polydimethylsiloxane is at first in special reactor, drop into the prestox tetrasiloxane ring body or the dimethyl siloxane mixed methylcyclosiloxane of 98% content, be warming up to 60~65 ℃ of vacuum then and deviate from moisture, add various auxiliary agents again, generate through polyreaction, under stirring and special operational, products therefrom becomes hydroxy-end capped polydimethylsiloxane after filtration, is base polymer.
3. the transparent electron pouring sealant of height according to claim 1, the surface treatment procedure that it is characterized in that described reinforced filling: the white carbon black and the composite treating agent that in special reactor, drop into 90% content, heat up, dewater, cool off in 145~150 ℃ after under shear conditions, handling certain hour, this several steps is repeated twice back discharging, carry out the surface treatment of reinforced filling.
4. the transparent electron pouring sealant of height according to claim 1, it is characterized in that described banburying operation is to drop into the hydroxy-end capped polydimethylsiloxane of 80% content, the reinforced filling of 10% content, half reinforced filling of 10% content in kneader, after being heated to 150~160 ℃, insulation banburying in 2 hours then, under vacuum condition, taking off low molecule and promptly get the work in-process sizing material.
5. the transparent electron pouring sealant of height according to claim 1, it is characterized in that the described glue process of joining is the work in-process sizing material after mixing to be added auxiliary agent (comprising linking agent) stir after milling in reactor, packing becomes high transparent electron pouring sealant finished product again after discharging is filtered.
6. the transparent electron pouring sealant of height according to claim 2 is characterized in that described auxiliary agent comprises initiator, hydroxyl closure agent etc.
7. the transparent electron pouring sealant of height according to claim 2 is characterized in that described composite treating agent comprises silazane, methoxy silane, hydroxy silicon oil, water etc.
8. the transparent electron pouring sealant of height according to claim 5 is characterized in that described auxiliary agent linking agent.
CN 201110008175 2011-01-14 2011-01-14 Highly transparent electronic encapsulating adhesive Pending CN102174261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201110008175 CN102174261A (en) 2011-01-14 2011-01-14 Highly transparent electronic encapsulating adhesive

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Application Number Priority Date Filing Date Title
CN 201110008175 CN102174261A (en) 2011-01-14 2011-01-14 Highly transparent electronic encapsulating adhesive

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CN102174261A true CN102174261A (en) 2011-09-07

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103483587A (en) * 2013-09-22 2014-01-01 桐乡市溶力化工有限公司 Constitution controller and production technology thereof
CN104562775A (en) * 2014-07-03 2015-04-29 东莞市良展有机硅科技有限公司 Condensed type printing silica gel, preparation method and application
CN105838318A (en) * 2016-06-01 2016-08-10 江苏创景科技有限公司 High-light-transmittance organosilicone pouring sealant for solar cells and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101200594A (en) * 2006-12-15 2008-06-18 比亚迪股份有限公司 Monocomponent dealcoholized cold curing silicon rubber
CN1629209B (en) * 2003-12-17 2010-04-28 北京三辰化工有限公司 Method for preparing electronic-grade single-component dealcoholizing-type room temperature cured silicon rubber by non-high-temperature vacuum dewatering method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1629209B (en) * 2003-12-17 2010-04-28 北京三辰化工有限公司 Method for preparing electronic-grade single-component dealcoholizing-type room temperature cured silicon rubber by non-high-temperature vacuum dewatering method
CN101200594A (en) * 2006-12-15 2008-06-18 比亚迪股份有限公司 Monocomponent dealcoholized cold curing silicon rubber

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
《medical and biological engineering and computing》 19891231 P.E.K Donaldson encapsulating microelectronic implants in one-part silicone rubbers 第27卷, 第1期 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103483587A (en) * 2013-09-22 2014-01-01 桐乡市溶力化工有限公司 Constitution controller and production technology thereof
CN104562775A (en) * 2014-07-03 2015-04-29 东莞市良展有机硅科技有限公司 Condensed type printing silica gel, preparation method and application
CN105838318A (en) * 2016-06-01 2016-08-10 江苏创景科技有限公司 High-light-transmittance organosilicone pouring sealant for solar cells and preparation method thereof

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Application publication date: 20110907