CN102169895A - Radio-frequency metal-oxide-semiconductor field effect transistor - Google Patents
Radio-frequency metal-oxide-semiconductor field effect transistor Download PDFInfo
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- CN102169895A CN102169895A CN 201010113496 CN201010113496A CN102169895A CN 102169895 A CN102169895 A CN 102169895A CN 201010113496 CN201010113496 CN 201010113496 CN 201010113496 A CN201010113496 A CN 201010113496A CN 102169895 A CN102169895 A CN 102169895A
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Abstract
The invention provides a radio-frequency MOS (Metal Oxide Semiconductor) transistor for increasing working speed, reducing noise deterioration caused by a grid parasitic resistor of the radio-frequency MOS transistor, and improving reliability. The radio-frequency MOS transistor comprises a source electrode, a drain electrode, a grid electrode, a substrate, a source metal layer, a drain metal layer and a side grid metal layer, wherein the grid electrode comprises sub grids and a side grid for connecting the sub grids, the source metal layer is used for connecting the source electrode with a source end, the drain metal layer is used for connecting the drain electrode with a drain end, the side grid metal layer is used for connecting the side grid with a grid input end, the source metal layer covers and extends out of the source electrode, a projection of the source metal layer in an active region is not overlapped with the source electrode and the sub grids, the side grid metal layer covers and extends out of the side grid, a projection of the source metal layer is not overlapped with the source electrode and the drain electrode; and in the source metal layer, the drain metal layer and the grid metal layer, parts formed by metals in the same layer are not crossed.
Description
Technical field
The invention belongs to integrated circuit fields, relate in particular to radio frequency metal-oxide-semiconductor field effect transistor (MOSFET, Metal-Oxide-Semiconductor Field Effect Transistor).
Background technology
Along with the CMOS technology is increasingly extensive in the application in radio frequency (RF) field, the high frequency performance of radio frequency metal-oxide-semiconductor receives publicity day by day.Under the high frequency situations, the dead resistance of radio frequency metal-oxide-semiconductor and parasitic capacitance have adverse effect to the performance of radio circuit usually, and for example dead resistance is high more, and the noise of radio circuit is big more usually; Parasitic capacitance is high more, and the cut-off frequency of radio frequency metal-oxide-semiconductor is low more, and the operating rate of radio circuit is just low more.
Fig. 1 is part domain (the not comprising the substrate part) structural representation of a kind of radio frequency metal-oxide-semiconductor in the prior art, and second layer metal is represented in the net region among the figure, and hatched example areas is represented the ground floor metal, in conjunction with this figure as can be known:
The grid of this radio frequency metal-oxide-semiconductor comprises a plurality of sub-grid 11, and the left side grid 120 and the right side grid 121 of connexon grid 11, left side grid 120 are provided with the grid the first metal layer, the grid the first metal layer is provided with grid second metal level, reach between left side grid 120 and the grid the first metal layer between grid the first metal layer and grid second metal level and be connected with through hole, left side grid 120 are as gate input, and described grid the first metal layer is formed by the ground floor metal, and grid second metal level is formed by second layer metal.
The drain electrode 13 (Drain) of this radio frequency metal-oxide-semiconductor is provided with leakage metal level, leaks metal level and extends son drain electrode 13, is connected to drain terminal 14; Described leakage metal level is formed by the ground floor metal, and drain terminal 14 is by interconnective leakage the first metal layer and leak second metal level and constitute, and wherein leaks the first metal layer and is formed by the ground floor metal, and leaks metal level and is connected; Leaking second metal level is formed by second layer metal.
The source electrode 15 (Source) of this radio frequency metal-oxide-semiconductor is provided with the source metal level, described source metal level is made of the main source metal level that is covered in the component metal level on the component utmost point 15 separately and be covered on Lou metal level, sub-grid 11 and the component metal level, its neutron source metal level is connected by through hole with main source metal level with the component utmost point 15 respectively, the component metal level is formed by the ground floor metal, main source metal level is formed by second layer metal, and the source metal level is as the source electrode input among the figure.
The present application people draws by analysis, in the radio frequency metal-oxide-semiconductor of said structure, main source metal level covers all sub-grid 11 and drain electrodes 13, increase the area that reaches overlapping region between the grid source electrode between source-drain electrode on the one hand, and the area of overlapping region is big more, the parasitic capacitance of radio frequency metal-oxide-semiconductor is big more, so the radio frequency metal-oxide-semiconductor parasitic capacitance of said structure is bigger, and then the operating rate of reduction radio frequency metal-oxide-semiconductor; On the other hand since generally grid be the high-frequency signal input, so source signal is when the source metal level transmits, each the sub-grid 11 medium-high frequency signal under inevitable and its covering have disturbing effect, the reliability of reduction radio frequency metal-oxide-semiconductor.
Summary of the invention
The invention provides radio frequency metal-oxide-semiconductor domain structure, with the disturbing effect that cross-couplings between the operating rate that improves the radio frequency metal-oxide-semiconductor and the source signal that reduces the source metal level and grid medium-high frequency signal causes, the reliability of raising radio frequency metal-oxide-semiconductor.
Radio frequency metal-oxide-semiconductor provided by the invention comprises source electrode, drain and gate and the old end, described grid is made of the side grid of sub-grid and connexon grid, also comprise the source metal level that connects source electrode and source end, the leakage metal level and the side grid metal level that is connected side grid and grid input that connects drain electrode and drain terminal, wherein the source metal level covers and extends source electrode, and it does not have overlapping in the projection of active area and drain electrode and sub-grid; Leak metal level and cover and also extend drain electrode, it does not have overlapping at the projection of active area and source electrode and sub-grid; Side grid metal level covers and extends the side grid, and it is at projection and the source electrode and the drain electrode nothing overlapping of active area; And in source metal level, leakage metal level and the grid metal level, there is not intersection by the part that the identical layer metal forms.
Optionally, the structure of described source metal level is: the source metal level that is covered on the source electrode is connected to form by ground floor metal and second layer metal, and the source metal level that extends source electrode is formed by second layer metal; And the structure of described leakage metal level is: the leakage metal level that is covered in the drain electrode is connected to form by ground floor metal and second layer metal, and the leakage metal level that extends drain electrode is that second layer metal forms.The grid input is made of interconnective grid the first metal layer and grid second metal level, and wherein the grid the first metal layer is formed by the ground floor metal, and grid second metal level is formed by second layer metal, and the grid the first metal layer is connected to side grid metal level; Reaching source end and drain terminal forms by second metal level.
Optionally, described side grid have two, wherein are coated with side grid metal level on side grid, and another side grid do not cover side grid metal level.
Optionally, the source metal level leaks metal level and extends to the orientation of the side grid that do not cover side grid metal level to the orientation of side grid metal level; And the structure of source metal level is: the part that is covered on the source electrode is connected to form by ground floor metal and second layer metal, and the part of extending source electrode is formed by second layer metal; The source end is formed by second layer metal; Leaking metal level is formed by the ground floor metal; Drain terminal is connected to form by ground floor metal and second layer metal, and wherein the ground floor metal of drain terminal is connected with the leakage metal level.
Optionally, leak metal level to the orientation of side grid metal level, the source metal level extends to the orientation of the side grid that do not cover side grid metal level; And the structure of leaking metal level is: the part that is covered in the drain electrode is connected to form by ground floor metal and second layer metal, and the part of extending drain electrode is formed by second layer metal; Drain terminal is formed by second layer metal; The source metal level is formed by the ground floor metal; The source end is connected to form by ground floor metal and second layer metal, and wherein the ground floor metal of source end is connected with the source metal level.
Optionally, described side grid have two; And side grid metal level arranged all on each side grid; And all side grid metal levels all are connected to the grid input.
The source metal level covering of a kind of radio frequency metal-oxide-semiconductor that the present invention proposes is also extended source electrode, and it is at projection and the sub-grid and the drain electrode nothing overlapping of active area, reduced the area of the overlapping between source grid and source-drain electrode on the one hand, thereby reduced the parasitic capacitance of radio frequency metal-oxide-semiconductor, improved the operating rate of radio frequency metal-oxide-semiconductor, reduce the disturbing effect that cross-couplings causes between the source signal of source metal level and grid medium-high frequency signal on the other hand, improved the reliability of radio frequency metal-oxide-semiconductor.
All there is side grid metal level to be connected to the grid input on two side grid of another kind of radio frequency metal-oxide-semiconductor provided by the invention, make the signal of grid input input enter grid from the parallel connection of two side grid respectively, make the equivalent dead resistance of radio frequency metal-oxide-semiconductor be reduced to half of single-ended input, thereby reduced the thermal noise that the metal-oxide-semiconductor grid of radio circuit causes.
Description of drawings
Fig. 1 is the part domain structure schematic diagram of a kind of radio frequency metal-oxide-semiconductor in the prior art;
Fig. 2 is the part domain structure schematic diagram of radio frequency metal-oxide-semiconductor in the first embodiment of the invention.
Embodiment
Although below with reference to accompanying drawings the present invention is described in more detail, wherein represented the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
For clear, whole features of actual domain structure are not described.In the following description, be not described in detail and generally acknowledge that known structure and domain constitute, the unnecessary details because they can be the present invention and confusion.Will be understood that in any actual domain structure optimization and exploitation, must make a large amount of implementation details, for example, change into another embodiment by an embodiment according to relevant system or relevant commercial restriction to realize developer's specific objective.In addition, will be understood that this development may be complicated and time-consuming, but only be routine work to those skilled in the art.
In the following passage, with way of example the present invention is described more specifically with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
Provide the concrete structure of several radio frequency metal-oxide-semiconductors provided by the invention below in conjunction with Figure of description, the hatched example areas among the figure is represented the ground floor metal, and second layer metal is represented in the net region.
With reference to Fig. 2, the radio frequency metal-oxide-semiconductor comprises in the first embodiment of the invention:
Source electrode 21, drain electrode 22 and grid; Described grid is made of two side grid of sub-grid 23 and connexon grid 23, and these two side grid are left side grid 230 and right side grid 231; This radio frequency MOS also comprises:
The source metal level that connects source electrode 21 and source end 24;
The leakage metal level that connects drain electrode 22 and drain terminal 26;
The side grid metal level that connects left side grid 230 and grid input 28;
In the present embodiment, source end 24 and drain terminal 26 are formed by second layer metal, and the structure of source metal level is: the part that is covered on the source electrode 21 is connected to form by ground floor metal and second layer metal, and the part of extending source electrode 21 is formed by second layer metal; The structure of leaking metal level is: the part that is covered in drain electrode 22 is connected to form by ground floor metal and second layer metal, and the part of extending drain electrode 22 is formed by second layer metal.All couple together between source electrode 21 and the source metal level 21 and between drain electrode 22 and the leakage metal level by through hole.
In this radio frequency metal-oxide-semiconductor, the source metal level covers and extends source electrode 21, and its projection at active area (frame of broken lines zone among the figure) does not have overlapping with drain electrode 22 and sub-grid 23;
Leak the metal level covering and extend drain electrode 22, it is at projection and the source electrode 21 and the sub-grid 23 nothing overlappings of active area;
Side grid metal level covers and extends left side grid 230, and it overlaps at the projection and the source electrode 21 of active area and 22 nothings that drain.
Source metal level among this embodiment does not have overlapping in the projection of active area with leakage metal level and side grid metal level, therefore reach just reduction of overlapping area between the grid of source between leak in the source, thereby reduced parasitic capacitance, improve radio frequency MOS operating rate, and can reduce or avoid the disturbing effect between source signal and grid high-frequency signal.
The direction that the source metal level extends among the embodiment one can be the orientation of side grid metal level, also can be the orientation of right side grid 231, and the direction that corresponding leakage metal level extends can be the orientation of right side grid 231, also can be the orientation of side grid metal level.
In the foregoing description, the source metal level, leaking metal level and side grid metal level can form with multiple metal, in fact only need assurance source metal level, leak in metal level and the grid metal level, the part that is formed by the identical layer metal does not have intersection and gets final product, for example the direction of the source metal level extension in embodiment one is the orientation of side grid metal level, when the direction that the leakage metal level extends is the orientation of right side grid 231, because no side grid metal level on the right side grid 231, therefore leaking metal level can be formed by the ground floor metal, corresponding drain terminal 26 is formed by interconnective ground floor metal and second layer metal, and the ground floor metal in the drain terminal 26 is connected with the leakage metal level.
In the radio frequency metal-oxide-semiconductor of the foregoing description, left side grid 230 are provided with side grid metal level, and side grid metal level also is set on the preferable right side grid 231, and what draw among Fig. 2 is preferable situation, and it is optional that side grid metal level is set on these right side grid 231; Then two side grid metal levels all are connected to grid input 28; Then import the signal of grid input 28 and will make an appointment with half so the parasitic resistance values of radio frequency metal-oxide-semiconductor can reduce by left side grid 230 and 231 inputs in parallel of right side grid, this will reduce the noise of radio circuit greatly.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (6)
1. radio frequency metal-oxide semiconductor field-effect transistor, comprise source electrode, drain electrode, grid and substrate, described grid is made of the side grid of sub-grid and connexon grid, it is characterized in that, also comprise the source metal level that connects source electrode and source end, the leakage metal level and the side grid metal level that is connected side grid and grid input that connects drain electrode and drain terminal, wherein
The source metal level covers and also extends source electrode, and it does not have overlapping in the projection of active area and drain electrode and sub-grid;
Leak metal level and cover and also extend drain electrode, it does not have overlapping at the projection of active area and source electrode and sub-grid;
Side grid metal level covers and extends the side grid, and it is at projection and the source electrode and the drain electrode nothing overlapping of active area; And
In source metal level, leakage metal level and the grid metal level, there is not intersection by the part that the identical layer metal forms.
2. transistor as claimed in claim 1 is characterized in that, the structure of described source metal level is: the source metal level that is covered on the source electrode is connected to form by ground floor metal and second layer metal, and the source metal level that extends source electrode is formed by second layer metal; And
The structure of described leakage metal level is: the leakage metal level that is covered in the drain electrode is connected to form by ground floor metal and second layer metal, and the leakage metal level that extends drain electrode is that second layer metal forms.
The grid input is made of interconnective grid the first metal layer and grid second metal level, and wherein the grid the first metal layer is formed by the ground floor metal, and grid second metal level is formed by second layer metal, and the grid the first metal layer is connected to side grid metal level; And
Source end and drain terminal form by second metal level.
3. transistor as claimed in claim 1 is characterized in that, described side grid have two, wherein is coated with side grid metal level on side grid, and another side grid do not cover side grid metal level.
4. transistor as claimed in claim 3 is characterized in that, the source metal level leaks metal level and extends to the orientation of the side grid that do not cover side grid metal level to the orientation of side grid metal level; And
The structure of source metal level is: the part that is covered on the source electrode is connected to form by ground floor metal and second layer metal, and the part of extending source electrode is formed by second layer metal;
The source end is formed by second layer metal;
Leaking metal level is formed by the ground floor metal;
Drain terminal is connected to form by ground floor metal and second layer metal, and wherein the ground floor metal of drain terminal is connected with the leakage metal level.
5. transistor as claimed in claim 3 is characterized in that, leaks metal level to the orientation of side grid metal level, and the source metal level extends to the orientation of the side grid that do not cover side grid metal level; And
The structure of leaking metal level is: the part that is covered in the drain electrode is connected to form by ground floor metal and second layer metal, and the part of extending drain electrode is formed by second layer metal;
Drain terminal is formed by second layer metal;
The source metal level is formed by the ground floor metal;
The source end is connected to form by ground floor metal and second layer metal, and wherein the ground floor metal of source end is connected with the source metal level.
6. transistor as claimed in claim 1 is characterized in that, described side grid have two; And
Side grid metal level is all arranged on each side grid; And
All side grid metal levels all are connected to the grid input.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010113496 CN102169895A (en) | 2010-02-25 | 2010-02-25 | Radio-frequency metal-oxide-semiconductor field effect transistor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010113496 CN102169895A (en) | 2010-02-25 | 2010-02-25 | Radio-frequency metal-oxide-semiconductor field effect transistor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105097926A (en) * | 2014-05-22 | 2015-11-25 | 上海北京大学微电子研究院 | Novel radio-frequency transistor layout structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1973377A (en) * | 2004-06-24 | 2007-05-30 | 皇家飞利浦电子股份有限公司 | High frequency transistor layout for low source drain capacitance |
| US20070297120A1 (en) * | 2006-06-12 | 2007-12-27 | Xiaowei Ren | Rf power transistor device with high performance shunt capacitor and method thereof |
| US20080076212A1 (en) * | 2004-09-29 | 2008-03-27 | International Business Machines Corporation | Structure and layout of a fet prime cell |
| CN101211916A (en) * | 2006-12-27 | 2008-07-02 | 联发科技股份有限公司 | RF integrated circuit device |
-
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1973377A (en) * | 2004-06-24 | 2007-05-30 | 皇家飞利浦电子股份有限公司 | High frequency transistor layout for low source drain capacitance |
| US20080076212A1 (en) * | 2004-09-29 | 2008-03-27 | International Business Machines Corporation | Structure and layout of a fet prime cell |
| US20070297120A1 (en) * | 2006-06-12 | 2007-12-27 | Xiaowei Ren | Rf power transistor device with high performance shunt capacitor and method thereof |
| CN101211916A (en) * | 2006-12-27 | 2008-07-02 | 联发科技股份有限公司 | RF integrated circuit device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105097926A (en) * | 2014-05-22 | 2015-11-25 | 上海北京大学微电子研究院 | Novel radio-frequency transistor layout structure |
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Application publication date: 20110831 |