CN102163692A - Film transistor, electronic equipment and manufacture method thereof - Google Patents
Film transistor, electronic equipment and manufacture method thereof Download PDFInfo
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- CN102163692A CN102163692A CN201110041020XA CN201110041020A CN102163692A CN 102163692 A CN102163692 A CN 102163692A CN 201110041020X A CN201110041020X A CN 201110041020XA CN 201110041020 A CN201110041020 A CN 201110041020A CN 102163692 A CN102163692 A CN 102163692A
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Abstract
The invention provides a film transistor, an electronic equipment and a manufacture method thereof. The stable performance is ensured by the film transistor. Organic TFT comprises a grid electrode (1), an active layer (3) arranged opposite to the grid electrode (1) and separated by a grid insulating layer (2), a source electrode (4) and a leakage electrode (5) separated from each other and connected with the active layer (3). The active layer (3) comprises soluble organic semi-conducting material and soluble macromolecular material. The vitrification temperature of the soluble macromolecular material is higher than the highest temperature during the packaging process.
Description
Technical field
The present invention relates to possess the thin-film transistor of the active layer that comprises organic semiconducting materials, the electronic equipment that uses this thin-film transistor and manufacture method thereof.
Background technology
In diversified technical field, make field-effect transistors (FET:FieldEffect Transistor) in recent years, wherein, extensively popularized thin-film transistor (TFT:Thin FilmTransistor).This TFT is contained in a lot of electronic equipments, for example uses with device as pixel selection in display of active matrix mode etc.
TFT is connected with drain electrode the source electrode with active layer (so-called channel layer), this active layer separates across gate insulation layer and gate electrode.In described TFT, according to the electric current that the voltage control that is applied on the gate electrode flows through between source electrode and drain electrode, flow in this electric current limit accumulation or the charge carrier limit that consumes in the active layer.
Use silicon (Si) or GaAs inorganic semiconductor materials such as (GaAs) as the material that forms active layer, the TFT with such active layer is called as inorganic TFT.But, be used for the big purposes of shape such as large screen display, because the inorganic semiconductor material price is expensive, and in order to make the performance of a plurality of inorganic TFT even along whole screen, need strict create conditions (high temperature or vacuum etc.), so increased difficulty and the cost made.
So, use cheap organic semiconducting materials to replace the technology of inorganic semiconductor material to obtain research recently, the TFT that possesses the active layer that comprises organic semiconducting materials is called as organic tft.The main use has the conjugation material of pi-electron as described organic semiconducting materials (for example with reference to non-patent literature 1～4).But, for described conjugation material, exist them can not obtain enough electrical properties, and in large-scale manufacturing engineering the problem of processing difficulties.In addition, because oxygen and reaction of moisture in easy and the atmosphere, so also there is the problem that can not obtain enough rigidity (toughness).For such stiff problem, there is the problem that makes the electronic equipment lost of life that organic tft is housed.Therefore, can't say that in the past organic semiconducting materials reaches can satisfy the level of using actually.
In detail, though use pentacene can obtain very high mobility, be limited to the situation (for example with reference to non-patent literature 5) of evaporation under high vacuum condition.In addition,,, also studied the predecessor that uses solubility, but in this case, must utilize high temperature (140 ℃～180 ℃) heating (for example with reference to non-patent literature 6) in a vacuum in order to form active layer in order to carry out liquid processing for pentacene.Utilize the manufacturing process of described liquid processing because the performance of the final organic tft of making is very easy to be subjected to the influence of substrate and conversion condition, from use useful viewpoint in reality, the described liquid processing of having to has limitation.
If use α-six thiophene equiconjugate oligomer, then can obtain high mobility, but be limited to the situation (for example with reference to non-patent literature 7,8) of evaporation under high vacuum condition.Relative therewith, for poly-a part of semi-conducting polymers such as (3-hexyl thiophenes), can be from solution phase evaporation, but find not talkative on reality is used enough (for example with reference to non-patent literature 9).
Borsenberger etc. have reported two (xylyl aminophenyl) cyclohexane have been entrained in high mobility doped polymer (for example with reference to non-patent literature 10) in the thermoplasticity polymer.The transfer layer that this high mobility doped polymer can be used as in the photoreceptor of electronography is used.
In addition, in order to make electronic device, studied the mixture (for example with reference to patent documentation 1) that uses organic material.This mixture is the conductivity coating composition that contains macromolecular material (polymer adhesive), charge transport molecule and oxidant, and oxidant wherein is used to improve carrier concn.
At least use the formation material (for example with reference to patent documentation 2) of the mixture of two kinds of organic semiconducting materials as active layer.Therefore in this case, a kind of organic semiconducting materials has the conductivity higher than another kind of organic semiconducting materials, and the organic semiconducting materials of high conductivity plays the effect that carrier is provided in active layer, Control current well.In addition, can also in the mixture of organic semiconducting materials, sneak into electrical insulating material.
The active layer that comprises organic semiconducting materials and macromolecular material (organic bond) also obtains utilizing (for example with reference to patent documentation 3).Described macromolecular material has less than 10
-6Scm
-1Intrinsic conductivity and under 1000Hz less than 3.3 DIELECTRIC CONSTANT.This DIELECTRIC CONSTANT is preferably less than 3.0, and more preferably less than 2.8, particularly preferably being is 2.0～2.8.
Non-patent literature 1:J.Mater.Chem., 7 (3), p369-p376,1997
Non-patent literature 2:J.Mater.Chem., 9, p1895-p1904,1999
Non-patent literature 3:Current Opinion in Solid State ﹠amp; Materials Science, 2, p455-p561,1997
Non-patent literature 4:Current Opinion in Solid State ﹠amp; Materials Science, 227, p253-p262,1998
Non-patent literary composition 5:Synth.Metals, 1127, p41-p43,1991
Non-patent literature 6:Synth.Metals, 88, p37-p55,1997
Non-patent literature 7:Synth.Metals, 435, p54,1993
Non-patent literature 8:Synth.Metals, 265, p1684,1994
Non-patent literature 9:Applied Physics Letters, 53, p195,1988
Non-patent literature 10:J.Appl.Phys., 34, Pt2, No12A, L1597-L1598,1995
Patent documentation 1: European patent communique 0910100A2 number
Patent documentation 2: No. the 5500537th, U.S. Patent bulletin
Patent documentation 3: the special table of the open communique of Japan Patent 2004-525501 number
In the manufacturing engineering of electronic equipment, after forming organic tft, with being that the various package parts of representative are packed with the insulating barrier of (or planarization with) etc. with protection.In this case, if organic tft is by superheated in packaging process, then the characteristic of active layer worsens easily, and therefore, the possibility of performances generation fluctuations such as mobility and on-off ratio becomes big in described organic tft.
Summary of the invention
In view of described problem, the purpose of this invention is to provide and a kind ofly can realize the thin-film transistor of stable performanceization, the electronic equipment that uses this thin-film transistor and manufacture method thereof.
Electronic equipment of the present invention comprises: thin-film transistor, and this thin-film transistor comprises: gate electrode; Active layer disposes across gate insulation layer is relative with described gate electrode, and contains soluble organic semiconductor material and soluble high-molecular material; And source electrode and drain electrode, described source electrode and drain electrode are separated from each other, and are connected with described active layer; And package parts, packed with described thin-film transistor, wherein, the vitrification point of described soluble high-molecular material is higher than the maximum temperature in the described thin-film transistor operation packed with described package parts.
The manufacture method of electronic equipment of the present invention comprises: the operation that forms described thin-film transistor; And the operation that described thin-film transistor is encapsulated with package parts, wherein, the vitrification point of described soluble high-molecular material is higher than with the maximum temperature of described thin-film transistor in the operation that described package parts encapsulate.
Thin-film transistor of the present invention comprises: gate electrode; Active layer disposes across gate insulation layer is relative with described gate electrode, and contains soluble organic semiconductor material and soluble high-molecular material; And source electrode and drain electrode, described source electrode and drain electrode are separated from each other, and are connected with described active layer, and wherein, the vitrification point of described soluble high-molecular material is more than 150 ℃.
According to thin-film transistor of the present invention, active layer contains soluble organic semiconductor material and soluble high-molecular material, and the vitrification point of this soluble high-molecular material is higher than 150 ℃.In this case, in the operation of the electronic equipment that make to use thin-film transistor, even drop into thin-film transistor in the packaging process that comprises the operation of following heating (maximum temperature=150 ℃), the characteristic of active layer also is difficult for worsening.Therefore, between a plurality of thin-film transistors, performances such as mobility and on-off ratio are not easy to produce fluctuation.Therefore, can make the stable performance of thin-film transistor, and help to improve the performance of electronic equipment.
According to electronic equipment of the present invention or its manufacture method, make active layer contain soluble organic semiconductor material and soluble high-molecular material with the packed thin-film transistor of package parts.In addition, make the vitrification point of soluble high-molecular material be higher than the maximum temperature that adds man-hour of package parts.Therefore, even drop into thin-film transistor in the packaging process that comprises the operation of following heating (maximum temperature=150 ℃), the characteristic of the active layer of thin-film transistor also is not easy to worsen, and therefore is not easy to produce performance inconsistency between a plurality of thin-film transistors.Thus, can realize improving the performance of electronic equipment.
Description of drawings
Fig. 1 is the cutaway view of structure of the thin-film transistor of expression one embodiment of the present invention.
Fig. 2 is the cutaway view of other structure of the thin-film transistor of expression one embodiment of the present invention.
Fig. 3 is the cutaway view of the variation of the relevant thin-film transistor structure of expression.
Fig. 4 is the cutaway view of structure of the liquid crystal indicator major part of the expression example that uses thin-film transistor.
Fig. 5 is the figure of the circuit structure of expression liquid crystal indicator shown in Figure 4.
Description of reference numerals
1 ... gate electrode, 2 ... gate insulation layer, 3 ... active layer, 4 ... the source electrode, 5 ... drain electrode, 10 ... driving substrate, 11,21 ... supporting substrates, 12 ... organic tft, 13 ... planarization insulating layer, 14 ... pixel electrode, 15 ... capacitor, 20 ... the subtend substrate, 22 ... counter electrode, 30 ... encapsulant, 31 ... liquid crystal layer, 32 ... holding wire, 33 ... scan line.
Embodiment
With reference to the accompanying drawings embodiments of the present invention are elaborated.The order that illustrates is as follows: 1. thin-film transistor, 2. use the example (electronic equipment) of thin-film transistor.
1. thin-film transistor
[overall structure of thin-film transistor]
Fig. 1 and Fig. 2 represent cross-section structure and the planar structure as the organic tft section of the thin-film transistor of one embodiment of the present invention respectively, and expression is along the section of I-I line shown in Figure 2 in Fig. 1.
As described in detail in the back, be the device that constitutes the part of electronic equipments such as liquid crystal indicator at this organic tft that will illustrate, in the engineering of making described electronic equipment, packed with package parts.So-called package parts are a plurality of parts (parts except organic tft) that constitute electronic equipment, for example cover the insulating barrier of organic tft or the electrode that is connected with organic tft etc.In addition, so-called encapsulation is meant in order to make electronic equipment, through various operations such as film formation process, connection operation or bonding processs, organic tft and package parts is combined.Following handle calls packaging process with the operation that organic tft combines with package parts.
Disposing the active layer 3 of organic tft, and on described active layer 3, connect source electrode 4 and drain electrode 5 across gate insulation layer 2 and gate electrode 1 relative mode.
In addition, organic tft illustrated in figures 1 and 2 for example is the downside that gate electrode 1 is positioned at active layer 3, and source electrode 4 and drain electrode 5 overlap the bottom gate top contact type of the upside of active layer 3.
In addition, in active layer 3, soluble organic semiconductor material and soluble high-molecular material also can be separated.In this case, in order between source electrode 4 and drain electrode 5 and active layer 3, to obtain enough conductivity, preferably comparing, be separated in distribute the more mode of soluble organic semiconductor material of a near side such as distance source electrode 4 grades with distance source electrode 4 a grades side far away.In addition, soluble organic semiconductor material and soluble high-molecular material are separated fully, thereby become two-layer.
Wherein, so-called solubility is meant that organic semiconducting materials and macromolecular material disperse the character of (dissolve and mix) with respect to solvent with molecular level, disperses in order to make their, can follow as required and stir or processing such as heating.In this case, preferably organic semiconducting materials and macromolecular material can dissolve with respect to common solvent.In addition, both solubility is with respect to solvent preferably more than the 0.5 weight %, more preferably more than the 1 weight %, further preferably more than the 5 weight %.
The kind of soluble organic semiconductor material so long as have characteristic of semiconductor and the organic material of described solubility in any one or two or more, just there is no particular limitation.
Wherein, as soluble organic semiconductor material, preferably has the conjugated aromatic material of three aromatic rings at least.The kind of aromatic ring is 5 rings, 6 rings or 7 rings preferably, more preferably 5 rings or 6 rings.These aromatic rings also can be at least one hetero-atom in selenium (Se), tellurium (Te), phosphorus (P), silicon (Si), boron (B), arsenic (As), nitrogen (N), oxygen (O) and the sulphur (S) as constituting element.Wherein, more preferably, described aromatic ring has at least a in nitrogen, oxygen and the sulphur.In addition, at least a portion of aromatic ring can be by any one or the two or more replacement in the following substituting group of enumerating.Described substituting group for example is alkyl, alkoxyl, poly-alkoxyl, alkylthio (thioalkyl), acyl group, aryl, halogen radical, cyano group, nitro, alkylamino (secondary or three grades) or virtue amino (secondary or three grades) etc.There is no particular limitation for the kind of halogen radical, for example is fluorine-based etc.In addition, substituting group also can be the derivative of described a series of bases.
Object lesson as soluble organic semiconductor material, can exemplify: polythiophene, poly--the 3-hexyl thiophene, pentacene [2,3,6,7-dibenzanthracene], poly-anthracene, polypyrrole, polyaniline, polyacetylene or polyhenylene, poly-furans, poly-selenophen, poly-dibenzothiophenes (Poly (isothianaphthene)), polyphenylene sulfide, the inferior ethene of polyphenyl, polythiophenevinylenand (polythienylene vinylene), poly-naphthalene or poly-pyrene, poly-Azulene, phthalocyanine, part cyanines or poly-enedioxy thiophene, poly-(3,4-enedioxy thiophene)/and polystyrolsulfon acid Huo diox anthanthrene (Dioxaneanthanthrene), wait material.Also can be the derivative of described material in addition.
The vitrification point of soluble high-molecular material is than the maximum temperature height in manufacturing process's (packaging process) of the electronic equipment that uses organic tft.This is owing under situation about organic tft being dropped in the packaging process, can prevent to be heated the characteristic degradation that causes active layer 3 because of organic tft under the temperature more than the vitrification point.
More particularly, preferably the vitrification point of soluble high-molecular material is higher than 150 ℃.Because at the imagination electronic equipment is that the maximum temperature in its manufacturing process (packaging process) is approximately 150 ℃ under the situation such as liquid crystal indicator.But if consider maximum temperature fluctuation in the packaging process etc., then in order to prevent the characteristic degradation of active layer 3 effectively, preferably vitrification point is higher 30 ℃ than the maximum temperature in the packaging process, and is more preferably high 50 ℃.That is, preferably vitrification point is higher than 180 ℃, more preferably is higher than 200 ℃.
In addition, just there is no particular limitation so long as can guarantee described solubility for the molecular weight of soluble high-molecular material, wherein preferably the molecular weight of macromolecular material more than 10000, more preferably more than 15000, further preferably more than 20000.Though this is that the dissolubility of macromolecular material increases with the increase of molecular weight substantially because also relevant with the kind of macromolecular material.
The kind of soluble high-molecular material so long as vitrification point be higher than in the macromolecular material of the solubility of maximum temperature in the packaging process any one or two or more, just there is no particular limitation.Object lesson as this soluble high-molecular material can exemplify following material etc.That is: vitrification point in the cyclic olefin copolymer more than 180 ℃, vitrification point at the polyphenylene oxide more than 200 ℃, polyether sulfone or polysulfones.
There is no particular limitation for the mixing ratio of soluble organic semiconductor material and soluble high-molecular material, wherein, soluble organic semiconductor material preferably: soluble high-molecular material=10: 1～1: 10, soluble organic semiconductor material more preferably: soluble high-molecular material=5: 1～1: 5, soluble organic semiconductor material further preferably: soluble high-molecular material=3: 1～1: 3 particularly preferably is soluble organic semiconductor material: soluble high-molecular material=1: 1.
At this, soluble organic semiconductor material and soluble high-molecular material dissolves in solvent, be configured to solution after, form active layer 3 with this solution.The formation method of this active layer 3 is so long as the method for using solution with regard to there is no particular limitation, for example can be infusion process, spray-on process, rubbing method or print process etc.In these formation methods, form film by making its drying (making solvent evaporates) behind the coating solution etc., thereby form the active layer 3 that contains solute (soluble organic semiconductor material and soluble high-molecular material).In this case, also can heat (baking) as required again handles.In addition, according to the kind of soluble organic semiconductor material and soluble high-molecular material and the concentration of solid content etc., can adjust the viscosity of solution.
In addition, the soluble high-molecular material can become macromolecule state (polymer) during described solution in preparation, also can be when obtain solution still low molecular state (monomer), described solution is becoming the macromolecule state through reacting after the coating etc.This reaction for example is a polymerization reaction of utilizing heat treated or photo-irradiation treatment etc.
Solvent types so long as can make soluble organic semiconductor material and the liquid of soluble high-molecular material dissolves in any one or two or more, just there is no particular limitation.In this case, preferably when drying (during solvent evaporates) on film (active layer 3), do not produce defective such, have good volatile material.As the object lesson of solvent, can exemplify; Materials such as chlorine class, the fragrant same clan, ketone, nitrogenous class, sulfur-bearing class or the organic class of aliphat.The chlorine class for example is carrene, chloroform, monochloro methane, o-dichlorohenzene, 1,2-dichloroethanes, 1,1,1-trichloroethanes or 1,1,2,2-tetrachloroethanes.The fragrance same clan for example is methyl phenyl ethers anisole, toluene, ortho-xylene, meta-xylene, paraxylene or tetrahydronaphthalene.Ketone for example is 1,4-diox, acetone, methyl ethyl ketone, ethyl acetate or n-butyl acetate.Nitrogenous class for example is dimethyl formamide, dimethylacetylamide, 2-methyl pyrrolidone or methylimidazole quinoline.The sulfur-bearing class for example is a methyl-sulfoxide.The organic class of aliphat for example is pentamethylene, cyclohexane or decahydronaphthalene.Wherein, if easy operability and stability in when considering obtain solution etc., preferably boiling point is higher than 100 ℃ solvent (high boiling solvent).
Source electrode 4 and drain electrode 5 for example use gold (Au), platinum (Pt), silver (Ag), copper, aluminium, molybdenum or their metal materials such as alloy to form, and also can form with their oxide.Particularly preferably be source electrode 4 and drain electrode 5 and active layer 3 ohmic contact.
In addition, organic tft also can have other the inscape beyond described.Can exemplify as other such inscapes: the matrix of supporting organic tft etc.This matrix for example can be the substrate (disk) of aluminium, nickel or stainless steel and other metal materials, also can be the thin slice of Merlon (PC) or PETG plastic materials such as (PET).
[method of manufacturing thin film transistor]
For example make described organic tft by following steps.In addition, the formation material of a series of inscape of organic tft is illustrated, so omit explanation below as required them.In addition, at the manufacture method of the organic tft of this explanation example only, formation material that can each inscape of appropriate change and formation method etc.
At first, form gate electrode 1.In this case, for example make the metal level film forming, after forming the mask of resist pattern etc. on the metal level, utilize this mask that metal level is carried out etching with photoetching process.After this, utilize ashing treatment method etc. to remove resist pattern after using.The film build method of metal level for example is sputtering method, vacuum vapour deposition or metal coating etc.The engraving method of metal level for example is ion beam milling, reactive ion etching (RIE) or wet etching etc.But the formation method of gate electrode 1 also can be with additive methods such as print processes.In addition, also can use metal pattern to replace the resist pattern as mask.
Then, the mode with covering grid electrode 1 forms gate insulation layer 2.For example because of the difference of the formation material of this gate insulation layer 2, the formation method of this gate insulation layer 2 is also different.Under the situation of using inorganic material, the formation method of gate insulation layer 2 can be sputtering method or chemical vapor deposition (CVD) method etc.Under the situation of using high-molecular organic material, the formation method of gate insulation layer 2 can be rubbing method or print process etc.
Then, on gate insulation layer 2, form active layer 3 according to the following steps.At first, soluble organic semiconductor material and soluble high-molecular material dissolves in solvent, are mixed with solution.As mentioned above, use vitrification point to be higher than the material of the maximum temperature in manufacturing process's (packaging process) of electronic equipment as the soluble high-molecular material in this case.Use infusion process, spray-on process, rubbing method or print process etc. subsequently, use solution on the surface of gate insulation layer 2, to form active layer 3.Rubbing method or print process for example are casting mold rubbing method, spraying process, ink jet printing method, toppan printing, flexographic printing method, silk screen print method, woodburytype or gravure offset etc.Then the resist pattern is carried out etching as mask to active layer 3.In this case, as forming method of patterning, for example use photoetching process or electron beam lithography method etc., and for example use wet etching etc. as engraving method.
At last, on gate insulation layer 2 to form source electrode 4 and drain electrode 5 with active layer 3 ways of connecting.In this case, at first, use the formation material identical to form metal level (not expression among the figure) in the mode of covering gate insulating barrier 2 and active layer 3 with source electrode 4 and drain electrode 5.The formation method of this metal level is the method for damagine activity layer 3 not when film forming preferably.On metal level, form the mask of resist pattern etc. then.Utilize mask that metal level is carried out selective etch at last, form source electrode 4 and drain electrode 5.The engraving method of metal level is for example identical with the situation that forms gate electrode 1, wherein the method for damagine activity layer 3 not when etching preferably.Finished the manufacturing of organic tft thus.
[about the effect and the effect of thin-film transistor]
According to described organic tft, active layer 3 contains soluble organic semiconductor material and soluble high-molecular material, and the vitrification point of described soluble high-molecular material is higher than the maximum temperature in the packaging process.Specifically, the vitrification point of described soluble high-molecular material is more than 150 ℃.In this case, in making the operation of electronic equipment, even the organic tft input is comprised in the packaging process of the operation of following heating (maximum temperature=150 ℃), the characteristic of active layer 3 also is not easy to worsen.Therefore, between a plurality of organic tfts, be not easy to produce the fluctuation of performances such as mobility and on-off ratio.Therefore can make stable performance, and help to improve the performance of electronic equipment.
In addition, owing to utilize the formation active layers 3 such as rubbing method that use solution,, can simply and effectively form active layer 3 so compare with the situation of the formation active layers 3 such as vapour deposition method that utilize strict creating conditions (high temperature or vacuum etc.).Thus, can reduce manufacturing cost.
[variation]
In addition, organic tft is not limited to bottom gate top contact type, as shown in Figure 3, also can be contact-type at the bottom of the bottom gate.In this case, active layer 3 overlaps the upside of source electrode 4 and drain electrode 5.In addition, though do not have concrete diagram, also can be that gate electrode 1 is positioned at contact-type at the bottom of the top grid top contact type of active layer 3 upsides or the top grid at this.Also can obtain same effect in these cases.
2. the use example (electronic equipment) of thin-film transistor
Use example to described thin-film transistor (organic tft) describes below.Described organic tft can be used for various electronic equipments.
For example organic tft can be applied in the liquid crystal indicator as electronic equipment.Fig. 4 and Fig. 5 represent the cross-section structure and the circuit structure of liquid crystal indicator major part respectively.In addition, Shuo Ming apparatus structure (Fig. 4) and circuit structure (Fig. 5) can their structures of appropriate change nothing but an example below.
[structure of electronic equipment]
For example be to use the transmission type lcd device of the driven with active matrix mode of organic tft at the liquid crystal indicator of this explanation, described organic tft uses as the element of switch (pixel selection) usefulness.As shown in Figure 4, described liquid crystal indicator is the device that liquid crystal layer 31 is enclosed between driving substrate 10 and the subtend substrate 20.
For example order forms organic TFT12, planarization insulating layer 13 and pixel electrode 14 on a face of supporting substrates 11, and a plurality of organic tft 12 and pixel electrode 14 be configured to rectangular, constitutes driving substrate 10 thus.But the quantity of the organic tft 12 that contains a pixel can be one, also can be more than two.What represent in Fig. 4 and Fig. 5 is the situation that for example contains an organic tft 12 a pixel.For example form supporting substrates 11 with transmission material such as glass or plastic materials, organic tft 12 has the structure identical with described organic tft.The kind of plastic material is for example identical with the situation that organic tft was illustrated.Planarization insulating layer 13 is for example formed by insulative resin materials such as polyimides, and pixel electrode 14 is for example formed by tin indium oxide transmittance conductive materials such as (ITO).In addition, pixel electrode 14 for example is connected with organic tft 12 by the contact hole (not expression among the figure) that is arranged on the planarization insulating layer 13.
To be configured to making the relative mode of pixel electrode 14 and counter electrode 22, utilize encapsulant 30 to paste driving substrate 10 and subtend substrates 20 across liquid crystal layer 31.The kind of the liquid crystal molecule that contains in the liquid crystal layer 31 can be selected arbitrarily.
In addition, liquid crystal indicator for example also can have other inscapes such as polarizer, Polarizer, alignment films and back light unit (all not having expression in the drawings).
As shown in Figure 5, the circuit that is used to drive liquid crystal indicator comprises described organic tft 12, pixel electrode 14, counter electrode 22, liquid crystal layer 31 and capacitor 15.In this circuit, on line direction, arrange a plurality of holding wires 32, and on column direction, arrange a plurality of scan lines 33, configuration organic TFT12, pixel electrode 14 and capacitor 15 on their cross one another positions.But the link of source electrode, gate electrode and the drain electrode of organic tft 12 is not limited to situation shown in Figure 5.Holding wire 32 does not have the signal-line driving circuit (data driver) of expression to be connected with scan line drive circuit (scanner driver) respectively with among the figure with scan line 33.
[action of electronic equipment]
In this liquid crystal indicator, if select pixel electrode 14, between this pixel electrode 14 and counter electrode 22, apply electric field by organic tft 12, then according to this electric field strength, the state of orientation of the liquid crystal molecule in the liquid crystal layer 31 changes.Thus, owing to the state of orientation according to liquid crystal molecule, transmittance amount (transmissivity) is controlled, so the display gray scale image.
[manufacture method of electronic equipment]
For example make described liquid crystal indicator according to following steps.
At first, make driving substrate 10.In this case, by the step identical, on a face of supporting substrates 11, form a plurality of organic tfts 12 in the mode that is configured to rectangular with described organic tft.As mentioned above, this organic tft 12 possesses the active layer that contains soluble organic semiconductor material and soluble high-molecular material.Particularly the vitrification point of soluble high-molecular material is higher than the maximum temperature in manufacturing process's (packaging process) of the use organic tft of following explanation, specifically is higher than 150 ℃.
Then, form planarization insulating layer 13, make this planarization insulating layer 13 cover organic TFT12 and the supporting substrates 11 around it.In this case, for example behind the precursor solution (polyamic acid) with coating polyimides such as method of spin coating, heat (oven dry) several minutes down, form planarization insulating layer 13 at 100 ℃～150 ℃.Then, utilize photoetching process to make planarization insulating layer 13 form pattern (exposure and development).At last planarization insulating layer 13 is heated (back baking) several minutes down at 150 ℃.
Then, on planarization insulating layer 13, form a plurality of pixel electrodes 14 in the mode that is configured to rectangular.In this case, at first, for example utilize formation ITO layers such as vapour deposition method (not expression among the figure), make this ITO layer cover the surface of planarization insulating layer 13.With method of spin coating etc., behind painting photoresist on the surface of ITO layer,, thereby form photoresist film (not representing among the figure) subsequently heating (oven dry) below 100 ℃ several minutes.Then, utilize photoetching process to make photoresist film form pattern (exposure, development and blanket exposure), thereby form the photoresist pattern.At last the photoresist pattern is carried out developing behind the wet etching to the ITO layer as mask, and heated 2 minutes down at 100 ℃.
Then, form counter electrode 22, make this counter electrode 22 cover a face of supporting substrates 21, make subtend substrate 20.At last, so that pixel electrode 14 is pasted driving substrate 10 and subtend substrate 20 with counter electrode 22 relative modes, in the space that is arranged between the two substrates, inject liquid crystal then, form liquid crystal layer 31 by encapsulant 30.Thus, finish the making liquid crystal indicator.
[about the effect and the effect of electronic equipment and manufacture method thereof]
According to described Liquid crystal disply device and its preparation method, possess the organic tft 12 of the active layer that contains soluble organic semiconductor material and soluble high-molecular material in formation after, this organic tft 12 is put in the packaging process.In this case, owing to make the vitrification point of soluble high-molecular material be higher than maximum temperature in the packaging process,, and between a plurality of organic tfts 12, be not easy to produce performance inconsistency so the characteristic of active layer is difficult for worsening in this packaging process.Therefore, can realize improving the performance of electronic equipment.Effect in addition is identical with described organic tft.In addition, liquid crystal indicator is not limited to transmission-type, also can be reflection-type.
Embodiment
Below embodiments of the invention are elaborated.
The test organic tft of contact-type has been studied its performance at the bottom of the making bottom gate.Making under the situation of organic tft, the silicon wafer of prepare earlier to have mixed boron (B), phosphorus (P), antimony (Sb) or arsenic (As) is as the matrix of bearing gate electrode function.Then, on a face of silicon wafer, form by silicon dioxide (SiO
2) gate insulation layer (thickness=150nm) that constitutes.Then, on gate insulation layer, form source electrode and the drain electrode that constitutes by gold.In this case, make size shown in Figure 2 (L, W) be L=50 μ m, W=30mm.Then, the soluble organic semiconductor material shown in the table 1 and soluble high-molecular material (vitrification point Tg: ℃) are dissolved in the toluene, are mixed with solution.In this case, make the mixing ratio (weight ratio) of soluble organic semiconductor material and soluble high-molecular material=1: 1, total solid=1 weight %.Used chemical formula (1) expression De diox anthanthrene compounds (compeling the derivative of xanthene and xanthene (peri-xanthenoxanthene)) as soluble organic semiconductor material.Cyclic polyolefin (cyclic olefine copolymer: TOPAS6015, the TOPAS6017 of different Polyplastics Co., Ltd. (the Port リ プ ラ ス チ Star Network ス Co., Ltd.) system of polystyrene, molecular weight have been used as the soluble high-molecular material, they all are trade names) or polyphenylene oxide (PPE, polyphenylether).Then, utilize the method for spin coating coating solution after, in baking box 100 ℃ down dry, form active layer (thickness=50nm～100nm).
[Chemical formula 1]
After the performance (mobility and on-off ratio) of having studied organic tft under the normal temperature environment (23 ℃), they in baking box at 150 ℃ down after the heating, restudied performance, obtained the result shown in the table 1.In this case, establish voltage Vd=-30V, represented the order of magnitude (only represented be 10 several powers) for on-off ratio.
Table 1
The Tg of mobility and on-off ratio and soluble high-molecular material is irrelevant, has compared all step-down before heating back and the heating.But, be higher than at Tg under the situation of heating-up temperature (=150 ℃), compare the reduction ratio of mobility and on-off ratio (=[value before the value/heating after the heating] * 100:%) obviously diminish with the situation that Tg is lower than heating-up temperature.Therefore, confirmed: if make Tg than heating-up temperature height, the performance that then can suppress organic tft reduces and the generation fluctuation.
Above, be that example describes the present invention with the execution mode, but the mode that the invention is not restricted to illustrate in execution mode can be carried out various distortion.For example, using the electronic equipment of thin-film transistor of the present invention can be other display unit beyond the liquid crystal indicator.Other display unit as such can exemplify: organic electroluminescent (EL) display unit or display device of electronic paper etc.Also can improve display performance in this case.In addition, thin-film transistor of the present invention also can be used for other the electronic equipment except display unit.
Claims (8)
1. electronic equipment, this electronic equipment comprises:
Thin-film transistor, this thin-film transistor comprises: gate electrode; Active layer disposes across gate insulation layer is relative with described gate electrode, and contains soluble organic semiconductor material and soluble high-molecular material; And source electrode and drain electrode, described source electrode and drain electrode are separated from each other, and are connected with described active layer; And
Package parts, packed with described thin-film transistor, wherein,
The vitrification point of described soluble high-molecular material is higher than the maximum temperature in the described thin-film transistor operation packed with described package parts.
2. electronic equipment according to claim 1 is characterized in that, the vitrification point of described soluble high-molecular material is more than 150 ℃.
3. electronic equipment according to claim 1 is characterized in that, described soluble high-molecular material contains polyphenylene oxide.
4. electronic equipment according to claim 1 is characterized in that, the solubility of described soluble organic semiconductor material and described soluble high-molecular material is more than the 0.5 weight % with respect to common solvent.
5. electronic equipment according to claim 1 is characterized in that, described package parts comprise insulating barrier that covers described thin-film transistor or the electrode that is connected with described thin-film transistor.
6. the manufacture method of an electronic equipment comprises:
Form the operation of thin-film transistor, this thin-film transistor comprises: gate electrode; Active layer disposes across gate insulation layer is relative with described gate electrode, and contains soluble organic semiconductor material and soluble high-molecular material; And source electrode and drain electrode, described source electrode and drain electrode are separated from each other, and are connected with described active layer; And
The operation that described thin-film transistor is encapsulated with package parts, wherein,
The vitrification point of described soluble high-molecular material is higher than with the maximum temperature of described thin-film transistor in the operation that described package parts encapsulate.
7. the manufacture method of electronic equipment according to claim 6 is characterized in that, described packaging process comprises photo-mask process and wet etching operation.
8. a thin-film transistor comprises: gate electrode; Active layer disposes across gate insulation layer is relative with described gate electrode, and contains soluble organic semiconductor material and soluble high-molecular material; And source electrode and drain electrode, described source electrode and drain electrode are separated from each other, and are connected with described active layer, wherein,
The vitrification point of described soluble high-molecular material is more than 150 ℃.
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| JP2010033434A JP5573219B2 (en) | 2010-02-18 | 2010-02-18 | THIN FILM TRANSISTOR, ELECTRONIC DEVICE, AND ITS MANUFACTURING METHOD |
| JP2010-033434 | 2010-02-18 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904257A (en) * | 2014-04-08 | 2014-07-02 | 深圳市科达利实业股份有限公司 | Power battery cover plate capable of resisting electrocorrosion |
| CN105676259A (en) * | 2016-01-27 | 2016-06-15 | 无锡盈芯半导体科技有限公司 | Scintillator detector based on molybdenum disulfide transistor and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2015523306A (en) * | 2012-05-31 | 2015-08-13 | コーニング インコーポレイテッド | A method for sludge control in wet acid etching. |
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| CN1278109A (en) * | 1999-06-04 | 2000-12-27 | 株式会社半导体能源研究所 | Electrooptical device and electronic device |
| JP2005322895A (en) * | 2004-04-09 | 2005-11-17 | Mitsubishi Chemicals Corp | Organic electronic-device and manufacturing method thereof |
| US20070092760A1 (en) * | 2003-02-13 | 2007-04-26 | Toshiya Sagisaka | New aryl amine polymer, thin film transistor using the new aryl amine polymer, and method of manufacturing the thin film transistor |
| US20090224235A1 (en) * | 2008-03-05 | 2009-09-10 | Fujifilm Corporation | Transparent organic thin film transistor |
| CN101591343A (en) * | 2008-05-26 | 2009-12-02 | 索尼株式会社 | Dioxoanthracene embedding anthracene compound and semiconductor device |
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2010
- 2010-02-18 JP JP2010033434A patent/JP5573219B2/en not_active Expired - Fee Related
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- 2011-01-24 TW TW100102519A patent/TWI446544B/en not_active IP Right Cessation
- 2011-02-17 CN CN201110041020XA patent/CN102163692A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1278109A (en) * | 1999-06-04 | 2000-12-27 | 株式会社半导体能源研究所 | Electrooptical device and electronic device |
| US20070092760A1 (en) * | 2003-02-13 | 2007-04-26 | Toshiya Sagisaka | New aryl amine polymer, thin film transistor using the new aryl amine polymer, and method of manufacturing the thin film transistor |
| JP2005322895A (en) * | 2004-04-09 | 2005-11-17 | Mitsubishi Chemicals Corp | Organic electronic-device and manufacturing method thereof |
| US20090224235A1 (en) * | 2008-03-05 | 2009-09-10 | Fujifilm Corporation | Transparent organic thin film transistor |
| CN101591343A (en) * | 2008-05-26 | 2009-12-02 | 索尼株式会社 | Dioxoanthracene embedding anthracene compound and semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103904257A (en) * | 2014-04-08 | 2014-07-02 | 深圳市科达利实业股份有限公司 | Power battery cover plate capable of resisting electrocorrosion |
| CN105676259A (en) * | 2016-01-27 | 2016-06-15 | 无锡盈芯半导体科技有限公司 | Scintillator detector based on molybdenum disulfide transistor and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201140848A (en) | 2011-11-16 |
| JP2011171484A (en) | 2011-09-01 |
| TWI446544B (en) | 2014-07-21 |
| JP5573219B2 (en) | 2014-08-20 |
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