CN102157443A - Manufacturing method of protection circuit for array unit of image sensor - Google Patents
Manufacturing method of protection circuit for array unit of image sensor Download PDFInfo
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- CN102157443A CN102157443A CN2011100203318A CN201110020331A CN102157443A CN 102157443 A CN102157443 A CN 102157443A CN 2011100203318 A CN2011100203318 A CN 2011100203318A CN 201110020331 A CN201110020331 A CN 201110020331A CN 102157443 A CN102157443 A CN 102157443A
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Abstract
The invention relates to a manufacturing method of a protection circuit for an array unit of an image sensor, which comprises the following steps: A) the process step of generating a TFT (thin-film transistor): manufacturing the pixel TFT in an active region of a glass substrate, forming an outer protection loop circuit in a non-active region of the glass substrate, and forming a signal line, a scanning line, a signal end pin electrode and a scanning end pin electrode on the glass substrate; B) the metal connection process step: using a metal material to connect the scanning end pin electrode and the signal end pin electrode with the outer protection loop circuit for forming an electrostatic discharge loop; C) the process step of generating a photosensitive diode: forming the photosensitive diode above the metal material; D) the etching process step: selectively etching the metal material between the scanning end pin electrode, the signal end pin electrode and the outer protection loop circuit; and E) the re-connection process step: using a transparent conductive material to re-connect the signal end pin electrode and the scanning end pin electrode with the outer protection loop circuit for forming the electrostatic discharge loop.
Description
Technical field
The present invention relates to a kind of protective circuit manufacture method of array element of amorphous silicon imageing sensor.
Background technology
Display device and imageing sensor are two big main application fields of active-matrix substrate.Be divided into active region (active region on the active-matrix substrate, Active area) and non-active region, in active region, be formed with TFT, scan line and holding wire, and store electricity photodiode perhaps, be formed with at non-active region and be used to connect the pin of scan line and drive circuit and be connected the pin that reads circuit and holding wire.In order to prevent that static from wounding; usually at non-active region electrostatic discharge protective circuit is set; and by electric conducting material will scan the end pin and the pin of signal end link to each other with electrostatic discharge protective circuit respectively; as notification number is the Chinese patent of CN100414411C; a kind of manufacture method with active-matrix substrate of electrostatic discharge protective circuit is disclosed in detail; it at first forms TFT at active region; structure such as scan line and holding wire; form scanning end pin electrode and signal end pin electrode and electrostatic discharge protective circuit at non-active region; to scan end pin electrode at the final step of technology and be connected with electrostatic discharge protective circuit respectively, formation static discharge loop with signal end pin electrode.
Yet; this method more is to be applied in the manufacturing process of TFT-LCD; therefore because TFT-LCD just can make by 5 road light shields and finish, after forming TFT, just can form the static discharge loop, thereby can form effective protection TFT through step seldom.And in the manufacturing process of imageing sensor; generally need just can finish through 10 layers of technology more than the light shield; also need later on can form the static discharge loop when forming TFT through other several layer process; and before forming the static discharge loop, early stage, produced TFT just was faced with the problem of no electrostatic protection.
Summary of the invention
The object of the invention provides a kind of protective circuit manufacture method of array element of imageing sensor, forms whole static discharge loop by metal material and protects TFT once forming TFT firm, thereby avoid TFT to be wounded by static.
For achieving the above object, the technical solution used in the present invention is: a kind of protective circuit manufacture method of array element of imageing sensor, it comprises the following steps:
Provide a glass substrate, the non-active region that has at least one active region on this glass substrate and be arranged in described active region periphery;
A, TFT generate operation: the active region at described glass substrate is made pixel TFT, non-active region at described glass substrate forms a plurality of electrostatic protection element circuits and the lead-in wire that is connected a plurality of described electrostatic protection element circuits, and on this glass substrate, forming holding wire, scan line, signal end pin electrode and scanning end pin electrode, described lead-in wire and a plurality of described electrostatic protection element circuit form the external guard ring road;
B, metal connect operation: with metal material described scanning end pin electrode, signal end pin electrode and described external guard ring road are connected to form the static discharge loop;
C, photodiode generate operation: form photodiode above described metal material;
D), etching procedure, optionally the metal material between metal material between the described scanning end of etching pin electrode and the described external guard ring road and described signal end pin electrode and the described external guard ring road makes to form between described external guard ring road and signal end pin electrode and the scanning end pin electrode and opens circuit;
E), connect operation again: with transparent conductive material described signal end pin electrode and scanning end pin electrode and described external guard ring road are reconnected and form the static discharge loop.
The further technical scheme of the present invention is: described metal material is Mo or Cu or Cr or Ta or Ti, or the Al-Nd alloy, or AL-Nd-AL-Mo alloy, perhaps Mo-AL-Mo alloy.
Further, described transparent conductive material is ITO or SnOx or ZnOx.
Another technical scheme of the present invention is: a kind of protective circuit manufacture method of array element of imageing sensor, it comprises the steps:
Provide a glass substrate, the non-active region that has at least one active region on this glass substrate and be arranged in described active region periphery;
A, TFT generate operation:
A1), deposition first conductive layer, at the gate electrode of described active region formation pixel TFT, at the scanning end pin electrode that described non-active region forms and the gate electrode of described pixel TFT is connected, the gate electrode that forms antistatic TFT and the lead-in wire that is connected with the gate electrode of described antistatic TFT;
A2), on described first conductive layer, form first insulating barrier, on described first insulating barrier, form active layer;
A3), the described active layer of etching, make described active layer above each gate electrode on described first insulating barrier, form the silicon island;
A4), deposition second conductive layer, source electrode and drain electrode in described active region formation pixel TFT form the signal end pin electrode that is connected with the source electrode or the drain electrode of described pixel TFT, the source electrode and the drain electrode of antistatic TFT at described non-active region;
A5), deposition second insulating barrier on described second conductive layer;
B, metal connect operation:
B1), optionally described second insulating barrier of etching and first insulating barrier, in described active region, form and make the source electrode of described pixel TFT or first via hole that drain electrode comes out, in described non-active region, form first interlayer hole that described scanning end pin electrode and signal end pin electrodes exposed are come out;
B2), deposition the 3rd conductive layer, form the bottom electrode of the photodiode that is connected with the source electrode or the drain electrode of described pixel TFT at described active region, at non-active region, make a plurality of described antistatic TFTs be connected to form the electrostatic protection element circuit, described lead-in wire and a plurality of described electrostatic protection element circuit form the external guard ring road, described scanning end pin electrode and signal end pin electrode are connected with described external guard ring road respectively, form the static discharge loop;
C, photodiode generate operation:
C1), deposition n type amorphous silicon membrane, intrinsic amorphous silicon film, p type amorphous silicon membrane and ITO film, be etched on the described bottom electrode by photoetching process and form photodiode;
C2), deposit passivation layer;
D, etching procedure:
D1), the described passivation layer of etching optionally, the top electrode of described photodiode is come out, at described non-active region, form second interlayer hole described scanning end pin electrode and signal end pin electrodes exposed are come out, and be used in and connect described external guard ring road and hold the 3rd conductive layer of pin electrode to come out with signal end pin electrode and scanning;
D2), the deposition the 4th conductive layer, described the 4th conductive layer is connected with the top electrode of photodiode;
D3), described the 4th conductive layer of etching, in described active region, form the bias electrode that is connected with the top electrode of described photodiode, the bias line that is connected a plurality of described bias electrodes, in described non-active region, form the bias terminal pin electrode that is positioned at described bias line end, and remove the 3rd conductive layer that is connected between described external guard ring road and signal end pin electrode and the scanning end pin electrode, make to form between described external guard ring road and signal end pin electrode and the scanning end pin electrode and open circuit;
D4), deposition protective layer;
E, connect operation again:
E1), the described protective layer of etching optionally, in described non-active region, form the 3rd interlayer hole, described bias terminal pin electrode, scanning end pin electrode and signal end pin electrodes exposed are come out;
E2), the deposition non-metallic conducting material, described bias terminal pin electrode, signal end pin electrode, scanning end pin electrode are reconnected with described external guard ring road respectively form the static discharge loop.
Preferably, described the 3rd conductive layer is Mo or Cu or Cr or Ta or Ti, or the Al-Nd alloy, or AL-Nd-AL-Mo alloy, perhaps Mo-AL-Mo alloy.
Further, described transparent conductive material is ITO or SnOx or ZnOx.
Further, described passivation layer comprises the 3rd insulating barrier and organic insulator.
Above-mentioned active matrix unit is to be produced on the glass substrate of a monoblock; after completing; also need to be cut to a plurality of undersized active-matrix substrates; line of cut is along the dotted line in the accompanying drawing 1; after glass substrate cuts off; the external guard ring road is removed, and pin electrode, signal end pin electrode and bias terminal pin electrode are held in only have active region and scanning that active-matrix substrate finally remains.Owing to the junction of scanning end pin electrode, signal end pin electrode and external guard ring road will be cut, therefore, this place is electrically connected material and all adopts nonmetallic transparent conductive material usually, to avoid damage cutter when cutting.
The present invention is after forming pixel TFT, to scan by the electric conducting material of deposition subsequently and to hold pin electrode and signal end pin electrode to be communicated with the external guard ring road respectively, thereby form whole static discharge loop and protect pixel TFT, therefore, after forming pixel TFT, generate in this segment process and can provide antistatic protection pixel TFT to photodiode; And for protection cutting tool when glass substrate cuts; the 3rd conductive layer (metal material layer) that the present invention will before deposit was got rid of before the glass substrate cutting; reconnect pixel TFT, photodiode and external guard ring road with transparent conductive material again and form the static discharge loop, therefore can not damage cutter because transparent conductive material such as ITO etc. are easy to cutting.
Description of drawings
Accompanying drawing 1 generates the circuit diagram of the imageing sensor after the operation for TFT;
Accompanying drawing 2 connects the circuit diagram of the imageing sensor after the technology for metal;
Accompanying drawing 3 is the circuit diagram of the imageing sensor behind the etch process;
Accompanying drawing 4 is for connecting the circuit diagram of the imageing sensor after the technology again;
Accompanying drawing 5 scans the schematic diagram of end pin electrode for through behind the step B1;
Accompanying drawing 6 scans the schematic diagram of end pin electrode for through behind the step D1;
Accompanying drawing 7 is for through after the step e 1, scanning end pin electrode schematic diagram;
Accompanying drawing 8～18 is the process chart (active region) of manufacture method of the present invention;
Accompanying drawing 19,20 is the circuit diagram of branch road electrostatic protection of the present invention unit;
Accompanying drawing 21～24 is the circuit diagram of loop electrostatic protection of the present invention unit;
Wherein: 1, pixel TFT; 11, gate electrode; 12, source electrode; 13, drain electrode; 14, scan line; 15, holding wire; 16, scanning end pin electrode; 17, signal end pin electrode; 2, photodiode; 21, bottom electrode; 3, electrostatic protection element circuit; 31, antistatic TFT; 32, lead-in wire; 4, bias electrode; 41, bias line; 42, bias terminal pin electrode; 51, first insulating barrier; 52, active layer; 53, second insulating barrier; 54, the 3rd insulating barrier; 55, organic insulator; 56, protective layer; 10, glass substrate.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described, described in this specification " on ", D score position relation concerns corresponding with the upper and lower position shown in the accompanying drawing 8.
Referring to accompanying drawing 8～17, a kind of protective circuit manufacture method of array element of imageing sensor, it comprises the steps:
Provide a glass substrate 10, the non-active region that has at least one active region on this glass substrate 10 and be arranged in described active region periphery;
A, TFT generate operation:
A1), referring to shown in the accompanying drawing 8, the deposition first conductive layer M1 on described glass substrate 10, utilize etch process to form the gate electrode 11 of pixel TFT 1 at described active region, form the scanning end pin electrode 16 that is connected with the gate electrode 11 of described pixel TFT 1, the lead-in wire 32 that forms the external guard ring road and the gate electrode (not shown) of antistatic TFT 31 at described non-active region, lead-in wire 32 connects the gate electrode of a plurality of antistatic TFTs 31;
A2), as shown in Figure 9, form first insulating barrier 51 on the described first conductive layer M1, form active layer 52 on described first insulating barrier 51, these active layer 52 lower floors are the intrinsic amorphous silicon film, and the upper strata is a n type amorphous silicon membrane;
A3), as shown in Figure 10, the described active layer 52 of etching makes described active layer 52 form the silicon island above each gate electrode on described first insulating barrier 51;
A4), the deposition second conductive layer M2, form the source electrode 12 and the drain electrode 13 of pixel TFT 1 at described active region, this moment, TFT formed, as shown in Figure 11; Form the signal end pin electrode 17 that is connected with the drain electrode 13 of described pixel TFT 1, the source electrode and the drain electrode (not shown) of antistatic TFT at described non-active region;
A5), referring to accompanying drawing 12, on the described second conductive layer M2 deposition second insulating barrier 53;
B, metal connect operation:
B1), optionally described second insulating barrier 53 of etching and first insulating barrier 51, in described active region, form the first via hole P1 that the source electrode 12 that makes described pixel TFT 1 comes out, referring to accompanying drawing 12; In described non-active region, offer a plurality of first interlayer hole VIA1, the described first interlayer hole VIA1 runs through described first insulating barrier 51 and second insulating barrier 53 at described scanning end pin electrode 16 places, the described first interlayer hole VIA1 runs through described second insulating barrier 53 at described signal end pin electrode 17 places, described scanning end pin electrode 16 and signal end pin electrode 17 are come out, referring to accompanying drawing 5;
B2), referring to shown in the accompanying drawing 13, deposit the 3rd conductive layer M3, form the bottom electrode 21 of the photodiode 2 that is connected with the source electrode 12 of described pixel TFT 1 at described active region, at non-active region, make a plurality of described antistatic TFTs 31 be connected to form electrostatic protection element circuit 3, described lead-in wire 32 and a plurality of described antistatic TFT 31 are formed the external guard ring road, described scanning end pin electrode 16 and signal end pin electrode 17 are connected with the lead-in wire 32 on described external guard ring road respectively, form the static discharge loop, as shown in Figure 2;
C, photodiode 2 generate operation:
C1), deposition n type amorphous silicon membrane, intrinsic amorphous silicon film, p type amorphous silicon membrane and ITO film, be etched in formation photodiode 2 on the described bottom electrode 21 by photoetching process, as shown in figure 14, described ITO film forms the top electrode of described photodiode 2;
C2), referring to accompanying drawing 15,16, deposit passivation layer, described passivation layer comprises the 3rd insulating barrier 54 and organic insulator 55;
D, etching procedure:
D1), optionally described organic insulator 55 of etching and the 3rd insulating barrier 54, in described active region, form the second via hole P2, the top electrode of described photodiode 2 is come out, at described non-active region, being used in the 3rd conductive layer M3 that connects described external guard ring road and signal end pin electrode 17 and scanning end pin electrode 16 comes out, simultaneously offer a plurality of second interlayer hole VIA2 at described non-active region, a plurality of described second interlayer hole VIA2 run through described organic insulator 55 and the 3rd insulating barrier 54 at described scanning end pin electrode 16 and signal end pin electrode 17 places respectively, described scanning end pin electrode 16 and signal end pin electrode 17 are come out, as shown in Figure 6;
D2), the deposition the 4th conductive layer M4, described the 4th conductive layer M4 is connected, as shown in Figure 17 with the top electrode of photodiode 2;
D3), described the 4th conductive layer M4 of etching, in described active region, form the bias electrode 4 that is connected with the top electrode of described photodiode 2, the bias line 41 that connects a plurality of described bias electrodes 4, in described non-active region, form the bias terminal pin electrode 42 that is positioned at described bias line 41 ends, and removal is connected the 3rd conductive layer M3 between described external guard ring road and signal end pin electrode 17 and the scanning end pin electrode 16, make to form between external guard ring road and signal end pin electrode 17 and the scanning end pin electrode 16 and open circuit, as shown in Figure 3;
D4), deposition protective layer 56;
E, connect operation again:
E1), the described protective layer 56 of etching optionally, form a plurality of the 3rd interlayer hole VIA3 in described non-active region, a plurality of the 3rd interlayer hole VIA3 make described bias terminal pin electrode 42, scanning end pin electrode 16 and signal end pin electrode 17 come out respectively;
E2), deposit transparent electric conducting material; described bias terminal pin electrode 42, signal end pin electrode 17, scanning end pin electrode 16 are reconnected with described external guard ring road respectively form the static discharge loop; described transparent conductive material is nonmetallic materials, ITO or SnOx or ZnOx.
Adopt the manufacture method in the present embodiment can when TFT just generates, just form discharge loop in time, and in etching procedure, adopt the method for over etching of the present invention to remove insulating barrier, can realize that manufacturing procedure is minimum.
The described first conductive layer M1, the second conductive layer M2, the material of the 3rd conductive layer M3 are Mo or Cu or Cr or Ta or Ti, or the Al-Nd alloy, or AL-Nd-AL-Mo alloy, perhaps Mo-AL-Mo alloy.The material of described first insulating barrier 51, second insulating barrier 53, the 3rd insulating barrier 4 is generally silicon nitride or silica.
Described electrostatic protection element circuit has two kinds: branch road electrostatic protection element circuit 3 and loop electrostatic protection element circuit 3 '.The structure of branch road electrostatic protection element circuit 3 is shown in accompanying drawing 18 or 19; branch road electrostatic protection element circuit 3 is formed by the antistatic TFT 31 mutual reversal connections that two gate electrodes are connected with drain electrode; this branch road electrostatic protection element circuit can absorb static, protective capability height at a high speed.Shown in the accompanying drawing 19, this branch road electrostatic protection element circuit can also be composed in parallel by the antistatic TFT 31 that a plurality of gate electrodes are connected with drain electrode.Loop electrostatic protection element circuit 3 ' calcaneus branches road electrostatic protection element circuit is identical, perhaps is composed in series by a plurality of branch road electrostatic protection element circuits.
The foregoing description only is explanation technical conceive of the present invention and characteristics, and its purpose is to allow the personage who is familiar with this technology can understand content of the present invention and enforcement according to this, can not limit protection scope of the present invention with this.All equivalences that spirit is done according to the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (7)
1. the protective circuit manufacture method of the array element of an imageing sensor is characterized in that: comprise the following steps
Provide a glass substrate, the non-active region that has at least one active region on this glass substrate and be arranged in described active region periphery;
A, TFT generate operation: the active region at described glass substrate is made pixel TFT, non-active region at described glass substrate forms a plurality of electrostatic protection element circuits and the lead-in wire that is connected a plurality of described electrostatic protection element circuits, and on this glass substrate, forming holding wire, scan line, signal end pin electrode and scanning end pin electrode, described lead-in wire and a plurality of described electrostatic protection element circuit form the external guard ring road;
B, metal connect operation: with metal material described scanning end pin electrode, signal end pin electrode and described external guard ring road are connected to form the static discharge loop;
C, photodiode generate operation: form photodiode above described metal material;
D), etching procedure, optionally the metal material between metal material between the described scanning end of etching pin electrode and the described external guard ring road and described signal end pin electrode and the described external guard ring road makes to form between described external guard ring road and signal end pin electrode and the scanning end pin electrode and opens circuit;
E), connect operation again: with transparent conductive material described signal end pin electrode and scanning end pin electrode and described external guard ring road are reconnected and form the static discharge loop.
2. the protective circuit manufacture method of the array element of imageing sensor according to claim 1, it is characterized in that: described metal material is Mo or Cu or Cr or Ta or Ti, or the Al-Nd alloy, or AL-Nd-AL-Mo alloy, perhaps Mo-AL-Mo alloy.
3. the protective circuit manufacture method of the array element of imageing sensor according to claim 1, it is characterized in that: described transparent conductive material is ITO or SnOx or ZnOx.
4. the protective circuit manufacture method of the array element of an imageing sensor is characterized in that it comprises the steps:
Provide a glass substrate, the non-active region that has at least one active region on this glass substrate and be arranged in described active region periphery;
A, TFT generate operation:
A1), deposition first conductive layer, at the gate electrode of described active region formation pixel TFT, at the scanning end pin electrode that described non-active region forms and the gate electrode of described pixel TFT is connected, the gate electrode that forms antistatic TFT and the lead-in wire that is connected with the gate electrode of described antistatic TFT;
A2), on described first conductive layer, form first insulating barrier, on described first insulating barrier, form active layer;
A3), the described active layer of etching, make described active layer above each gate electrode on described first insulating barrier, form the silicon island;
A4), deposition second conductive layer, source electrode and drain electrode in described active region formation pixel TFT form the signal end pin electrode that is connected with the source electrode or the drain electrode of described pixel TFT, the source electrode and the drain electrode of antistatic TFT at described non-active region;
A5), deposition second insulating barrier on described second conductive layer;
B, metal connect operation:
B1), optionally described second insulating barrier of etching and first insulating barrier, in described active region, form and make the source electrode of described pixel TFT or first via hole that drain electrode comes out, in described non-active region, form first interlayer hole that described scanning end pin electrode and signal end pin electrodes exposed are come out;
B2), deposition the 3rd conductive layer, form the bottom electrode of the photodiode that is connected with the source electrode or the drain electrode of described pixel TFT at described active region, at non-active region, make a plurality of described antistatic TFTs be connected to form the electrostatic protection element circuit, described lead-in wire and a plurality of described electrostatic protection element circuit form the external guard ring road, described scanning end pin electrode and signal end pin electrode are connected with described external guard ring road respectively, form the static discharge loop;
C, photodiode generate operation:
C1), deposition n type amorphous silicon membrane, intrinsic amorphous silicon film, p type amorphous silicon membrane and ITO film, be etched on the described bottom electrode by photoetching process and form photodiode;
C2), deposit passivation layer;
D, etching procedure:
D1), the described passivation layer of etching optionally, the top electrode of described photodiode is come out, at described non-active region, form second interlayer hole described scanning end pin electrode and signal end pin electrodes exposed are come out, and be used in and connect described external guard ring road and hold the 3rd conductive layer of pin electrode to come out with signal end pin electrode and scanning;
D2), the deposition the 4th conductive layer, described the 4th conductive layer is connected with the top electrode of photodiode;
D3), described the 4th conductive layer of etching, in described active region, form the bias electrode that is connected with the top electrode of described photodiode, the bias line that is connected a plurality of described bias electrodes, in described non-active region, form the bias terminal pin electrode that is positioned at described bias line end, and remove the 3rd conductive layer that is connected between described external guard ring road and signal end pin electrode and the scanning end pin electrode, make to form between described external guard ring road and signal end pin electrode and the scanning end pin electrode and open circuit;
D4), deposition protective layer;
E, connect operation again:
E1), the described protective layer of etching optionally, in described non-active region, form the 3rd interlayer hole, described bias terminal pin electrode, scanning end pin electrode and signal end pin electrodes exposed are come out;
E2), the deposition non-metallic conducting material, described bias terminal pin electrode, signal end pin electrode, scanning end pin electrode are reconnected with described external guard ring road respectively form the static discharge loop.
5. the protective circuit manufacture method of the array element of imageing sensor according to claim 4, it is characterized in that: described the 3rd conductive layer is Mo or Cu or Cr or Ta or Ti, or the Al-Nd alloy, or AL-Nd-AL-Mo alloy, perhaps Mo-AL-Mo alloy.
6. the protective circuit manufacture method of the array element of imageing sensor according to claim 4, it is characterized in that: described transparent conductive material is ITO or SnOx or ZnOx.
7. the protective circuit manufacture method of the array element of imageing sensor according to claim 4, it is characterized in that: described passivation layer comprises the 3rd insulating barrier and organic insulator.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104183655A (en) * | 2014-06-27 | 2014-12-03 | 友达光电股份有限公司 | Sensing device |
| CN105393261A (en) * | 2013-06-03 | 2016-03-09 | 高通股份有限公司 | Display with peripherally configured ultrasonic biometric sensor |
| CN105633097A (en) * | 2016-01-08 | 2016-06-01 | 京东方科技集团股份有限公司 | Array substrate, display panel and display apparatus |
| CN106057782A (en) * | 2016-08-04 | 2016-10-26 | 上海奕瑞光电子科技有限公司 | Antistatic protection structure and reliability improving method of semiconductor panel |
| CN109065558A (en) * | 2018-08-09 | 2018-12-21 | 京东方科技集团股份有限公司 | A kind of backboard and preparation method thereof, detection device |
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| CN1580918A (en) * | 2003-08-01 | 2005-02-16 | 京东方显示器科技公司 | Liquid crystal display panel |
| US20100060757A1 (en) * | 2006-12-11 | 2010-03-11 | Fujifilm Corporation | Solid-state image pickup device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1580918A (en) * | 2003-08-01 | 2005-02-16 | 京东方显示器科技公司 | Liquid crystal display panel |
| US20100060757A1 (en) * | 2006-12-11 | 2010-03-11 | Fujifilm Corporation | Solid-state image pickup device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105393261A (en) * | 2013-06-03 | 2016-03-09 | 高通股份有限公司 | Display with peripherally configured ultrasonic biometric sensor |
| CN105393261B (en) * | 2013-06-03 | 2019-03-01 | 高通股份有限公司 | The display of ultrasonic wave biological gage probe with periphery configuration |
| CN104183655A (en) * | 2014-06-27 | 2014-12-03 | 友达光电股份有限公司 | Sensing device |
| CN105633097A (en) * | 2016-01-08 | 2016-06-01 | 京东方科技集团股份有限公司 | Array substrate, display panel and display apparatus |
| CN105633097B (en) * | 2016-01-08 | 2018-07-17 | 京东方科技集团股份有限公司 | A kind of array substrate, display panel and display device |
| CN106057782A (en) * | 2016-08-04 | 2016-10-26 | 上海奕瑞光电子科技有限公司 | Antistatic protection structure and reliability improving method of semiconductor panel |
| CN109065558A (en) * | 2018-08-09 | 2018-12-21 | 京东方科技集团股份有限公司 | A kind of backboard and preparation method thereof, detection device |
| US11094738B2 (en) | 2018-08-09 | 2021-08-17 | Beijing Boe Optoelectronics Technology Co., Ltd. | Photoelectric detector, manufacturing method thereof, and detection device |
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| CN102157443B (en) | 2013-04-17 |
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