CN102145895A - Method and equipment for purifying polysilicon by utilizing shallow molten pool to carry out vacuum smelting - Google Patents
Method and equipment for purifying polysilicon by utilizing shallow molten pool to carry out vacuum smelting Download PDFInfo
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Abstract
The invention belongs to the technical field of purification of polysilicon by a physical metallurgical technology. A method for purifying polysilicon by utilizing a shallow molten pool to carry out vacuum smelting comprises the following steps of: under the high-volume condition with the vacuum degree below 0.001Pa, firstly melting a high purity polysilicon material in a smelting crucible by induction heating at a temperature of 1,430 to 1,460 DEG C to form high purity silicon solution, keeping the liquid state of the high purity silicon solution, and then heating the high purity silicon solution so that the temperature of the high purity silicon solution reaches 1,500 to 1,600 DEG C; continuously and slowly adding a rod with high phosphorus content and high metal silicon content into the silicon solution, continuously evaporating to remove a phosphorus impurity in the shallow molten pool; and after the rod with high phosphorus content and high metal silicon content is totally molten into the molten pool, keeping the silicon solution in the liquid state for a certain time in the smelting crucible at a temperature of 1,450 to 1,500 DEG C through induction heating, carrying out unidirectional solidification and cutting off the polysilicon with high content of metal impurities on the top of a silicon ingot. In the invention, a high-temperature high-vacuum large-area shallow molten pool smelting technology and an unidirectional solidification technology are integrated; the method has good purifying effect, is simple to operate, has low cost and high production efficiency and is suitable for batch production; and resources are saved.
Description
Technical field
The invention belongs to technical field, particularly a kind of method with phosphorus in the polysilicon and metallic impurity removal with physical metallurgy technology purifying polycrystalline silicon; The invention still further relates to its equipment in addition.
Background technology
Solar grade polycrystalline silicon material is the important source material of solar cell, and solar cell can be an electric energy with conversion of solar energy, and in conventional energy resources today in short supply, sun power has huge using value.At present, preparation polycrystalline silicon used for solar battery material has formed large-scale production in the world wide, and present main technological route has:
(1) improvement Siemens Method: Siemens Method is to be raw material with hydrochloric acid (or hydrogen, chlorine) and metallurgical grade industrial silicon, by trichlorosilane, carries out the technology of hydrogen reduction.Be Siemens Method abroad now, and formed industry than proven technique.This method has been developed to the third generation, improves to the 4th generation now.First-generation Siemens Method is non-closed, and promptly Fan Ying by product hydrogen and trichlorosilane caused the very big wasting of resources.The third generation improvement Siemens process of widespread use has now realized complete loop production, and hydrogen, trichlorosilane silane and hydrochloric acid all are recycled, and scale is also at 1000 tons more than every year.But its comprehensive power consumption is up to 170kwh/kg, and produces and be discontinuity, can't form in the production of Si and work continuously.
(2) metallurgy method:, remove metallic impurity with process meanses such as directional freezes; Adopt beam-plasma melting mode to remove boron; Adopt the electron beam melting mode to remove phosphorus, carbon, thereby obtain the solar-grade polysilicon of low production cost.This method energy consumption is little, and the energy consumption of unit output is less than half of Siemens Method, and a plurality of countries such as Japan, the U.S., Norway are engaged in the research and development of metallurgy method now, wherein with the technology of Japanese JFE maturation the most, has dropped into industrialization production.
(3) silane thermal decomposition process: be with silicofluoric acid (H
2SiF
6), sodium, aluminium, hydrogen is that main raw material(s) is produced silane (SiH
4), the technology of producing polysilicon then by thermolysis.This method is based on chemical technology, and energy consumption is bigger, compares no clear superiority with the siemens method.
(4) fluidized bed method: be with SiCl
4(or SiF
4) and metallurgical grade silicon be raw material, produce the technology of polysilicon.The granular polycrystalline silicon Process is typically a kind of in the fluidized bed operational path.But the technological line of this technology is just in the debug phase.
In numerous methods that prepare silicon materials, can invested in plant production have only improvement Siemens Method, silane thermal decomposition process, metallurgy method.But the facility investment of improvement Siemens Method and silane thermal decomposition process is big, cost is high, seriously polluted, complex process, the popularization that is unfavorable for solar cell is used, Comparatively speaking metallurgy method has characteristics with short production cycle, that pollution is little, cost is low, is the emphasis that various countries competitively research and develop.As known application number is the patent of invention of 2008100713986.X, utilizes the electron beam melting of bielectron rifle to remove foreign matter of phosphor and metal, but uses the bielectron rifle in this method, and energy consumption is bigger, and the surface-area in molten bath is little in the water jacketed copper crucible, and the speed of removing phosphorus is slower.
Summary of the invention
The present invention overcomes above-mentioned not enough problem, a kind of method of shallow pool vacuum melting purifying polycrystalline silicon is provided, high surface area shallow pool melting polysilicon and directional solidification technique under comprehensive utilization high temperature, the high vacuum, rapid evaporation is removed foreign matter of phosphor and the directed metallic impurity of removing, and reaches the service requirements of solar grade polycrystalline silicon material.Another object of the present invention provides a kind of equipment of shallow pool vacuum melting purifying polycrystalline silicon, compact construction, and easy handling, the function practicality, controllability is stronger.
The technical scheme that the present invention is adopted for achieving the above object is: a kind of method of shallow pool vacuum melting purifying polycrystalline silicon, get the raw materials ready, after the pre-treatment, elder generation's melted silicon material: under vacuum tightness is high vacuum condition below the 0.001Pa, in smelting pot, melt the high purity polycrystalline silicon material earlier by induction heating 1430-1460 ℃, form the HIGH-PURITY SILICON liquation, and make it keep liquid, and increase the power of ruhmkorff coil then, make the melted silicon temperature reach 1500-1600 ℃; Purify again: high phosphorus, high metal silicon rod adds among the melted silicon continuously slowly, high phosphorus, high metal silicon rod is constantly melted by bottom to upper end and forms high phosphorus, the shallow-layer molten bath of high metal, foreign matter of phosphor constantly evaporates in the shallow-layer molten bath and obtains removing, treat high phosphorus at last, after high metal silicon rod fuses into the molten bath fully, induction heating makes in the smelting pot and liquidly to keep for some time under 1450-1500 ℃ of temperature, draw spindle blade to pull down ingot by water-cooled, carry out directional freeze, metallic impurity are assembled to the liquation top, all solidify and reduce to room temperature up to liquid state, open bell, take out silicon ingot, cut the higher polysilicon of silicon ingot top metal foreign matter content, can obtain the lower polycrystal silicon ingot of phosphorus and metals content impurity.
It is to extend into vertically, slowly among the melted silicon by the silicon rod that hangs the high phosphorus that gripping unit will hang on the melted silicon top, high metal that described high phosphorus, high metal silicon rod add continuously slowly.
Described getting the raw materials ready: fall pull bar by promoting on the lifting electric device, make that hanging gripping unit rises to the limes superiors position, in smelting pot, add 500-1500g high purity polycrystalline silicon material, 2 or 4 high phosphorus, high metal silicon rods are clamped in hang on the gripping unit then.
Described pre-treatment: after closing bell, adopt mechanical pump, lobe pump and diffusion pump respectively, vacuum chamber is extracted into below the high vacuum 0.001Pa to the equipment extracting vacuum; Draw to water-cooled to feed water coolant in the spindle blade, make its temperature maintenance at 30-40 ℃.
Described melted silicon material: switch on to ruhmkorff coil, under 1430-1460 ℃ condition, melt high purity polycrystalline silicon material in the smelting pot by induction heating, form the HIGH-PURITY SILICON liquation, and keep liquid state, the fusing back increases the power of ruhmkorff coil fully, makes the melted silicon temperature reach 1500-1600 ℃.
Described purification: move downward by lifting electric device drive lifter drawing bar and suspension gripping unit, the feasible high phosphorus that hangs on HIGH-PURITY SILICON liquation top, high metal silicon rod with the speed of 20mm-100mm/min downward vertically, extend among the melted silicon slowly, high phosphorus, high Pure Silicon Metal nose constantly melts the formation high phosphorus, the shallow-layer molten bath of high metal, foreign matter of phosphor constantly evaporates in the shallow-layer molten bath and obtains removing, treat high phosphorus at last, after high metal silicon rod fuses into the molten bath fully, induction heating makes in the smelting pot and liquidly to keep 10-30min under 1450-1500 ℃ of temperature, draw spindle blade to pull down ingot by water-cooled, carry out directional freeze, metallic impurity are assembled to the liquation top, all solidify up to liquid state, stop to draw ingot and stop to switch on to ruhmkorff coil, continue to vacuumize 20-30min, open the purging valve venting, open bell, take out silicon ingot, cut the higher polysilicon of silicon ingot top metal foreign matter content, can obtain the lower polycrystal silicon ingot of phosphorus and metals content impurity.
The equipment of a kind of shallow pool vacuum melting of the present invention purifying polycrystalline silicon, equipment constitutes vacuum apparatus by bell and vacuum furnace wall, the inner chamber of vacuum apparatus is vacuum chamber, the vacuum chamber bottom is equipped with ingot pulling mechanism, melting crucible is installed on the ingot pulling mechanism, melting crucible is equipped with heating unit outward, the lifting electric device is installed on the vacuum chamber top exterior walls, the lifting electric device drives and connects the lifter drawing bar upper end, the lifter drawing bar lower end is passed the vacuum furnace wall and is connected on the interior suspension gripping unit of vacuum chamber, hangs gripping unit and is positioned at the melting crucible top.
Described suspension gripping unit is by fixer, rotation axis, binding clasp, fishbolt constitutes, and fixer is loaded on the lifter drawing bar bottom, and fixer two ends symmetric position is equipped with two rotation axiss, a binding clasp is installed on each rotation axis, is connected by fishbolt between fixer and the binding clasp; The suspension gripping unit is fixed or is rotated and is installed on the lifter drawing bar bottom.
Between described lifter drawing bar and the vacuum furnace wall sealing-ring being installed seals.
Described suspension gripping unit can clamp circle, square or erose silicon rod.
Described ingot pulling mechanism adopts graphite block to be installed on water-cooled and draws on the spindle blade, and smelting pot is installed on the graphite block.
Described heating unit is made of ruhmkorff coil, graphite sleeve and heat preservation carbon felt, and ruhmkorff coil, graphite sleeve and heat preservation carbon felt are installed on the base for supporting from outside to inside, and base for supporting is fixedly mounted on outside the ingot pulling mechanism of vacuum chamber bottom.
The technology of integral high temperature of the present invention, the shallow pool melting of high vacuum big area and directional freeze is removed foreign matter of phosphor and the metal in the polysilicon.Shallow pool vacuum melting is meant under the condition of condition of high vacuum degree, the polysilicon liquation that slowly constantly adds high content of phosphorus continuously to the big area shallow-layer zone in HIGH-PURITY SILICON molten bath, remove the method for the bigger volatile impunty phosphorus of saturated vapor pressure in the shallow-layer high phosphorus polysilicon liquation fast by the method for high melt, after this remove metallic impurity in conjunction with directional freeze, effectively improved the purity of polysilicon, reached the service requirements of solar energy level silicon, its refining effect is good, simple to operate, save energy, cost is low, and the production efficiency height is fit to produce in batches.
The present device compact construction, design is unique, the polycrystalline silicon rod of high phosphorus is hung on the top of HIGH-PURITY SILICON liquation by the suspension gripping unit, after the fusing of HIGH-PURITY SILICON liquation, polycrystalline silicon rod begins slow decline, the silicon rod surface temperature raises after entering induction region, silicon rod is preheated, when silicon rod with begin fusing after the HIGH-PURITY SILICON molten bath contacts, and spread out rapidly in weld pool surface formation shallow-layer molten bath, because the phosphorus saturated vapor pressure in the silicon is bigger, at high temperature, easily evaporation and remove the high temperature of this moment of weld pool surface under the high vacuum, the large-area shallow-layer of high vacuum molten bath provides very favorable condition for the removal of phosphorus, and foreign matter of phosphor will be fast, effectively evaporation, thereby being evacuated device takes away, after this directional freeze is removed metallic impurity, has improved production efficiency, and removal effect is good, integrated dephosphorization and remove the double effects of metal is fit to large-scale industrial production.
Description of drawings
Accompanying drawing 1 is a kind of device structure sketch of shallow pool vacuum melting purifying polycrystalline silicon.Among the figure, 1. lifting electric device, 2. lifter drawing bar, 3. vacuum chamber, 4. bell, 5. fixer, 6. rotation axis, 7. binding clasp, 8. fishbolt, 9. high phosphorus, high metal silicon rod, 10. heat preservation carbon felt, 11. graphite sleeves, 12. ruhmkorff coil, 13. smelting pots, 14. HIGH-PURITY SILICON liquations, 15. graphite blocks, 16. base for supporting, 17. water-cooleds are drawn spindle blade, 18. vacuum furnace walls, 19. purging valves, 20. mechanical pump, 21. lobe pumps, 22. diffusion pump.
Embodiment
Describe the present invention in detail below in conjunction with specific embodiment and accompanying drawing, but the present invention is not limited to specific embodiment.
Embodiment 1
A kind of method of shallow pool vacuum melting purifying polycrystalline silicon is under the high vacuum condition of 0.0008Pa in vacuum tightness, melts the high purity polycrystalline silicon material for 1430 ℃ by induction heating earlier in smelting pot 13, forms HIGH-PURITY SILICON liquation 14, and makes it keep liquid.
Increase the power of ruhmkorff coil 12 then, make the melted silicon temperature reach 1500 ℃, after this extend into vertically, slowly among the melted silicon by the silicon rod 9 that hangs the high phosphorus that gripping unit will hang on the melted silicon top, high metal, high phosphorus, high metal silicon rod 9 front ends constantly melt the shallow-layer molten bath that forms high phosphorus, high metal, and foreign matter of phosphor constantly evaporates in the shallow-layer molten bath and obtains removing.
After treating that at last high phosphorus, high metal silicon rod fuse into the molten bath fully, induction heating makes in the smelting pot and liquidly to keep 10min under 1500 ℃ of temperature, draw spindle blade 17 to pull down ingot by water-cooled, carry out directional freeze, metallic impurity are assembled to the liquation top, all solidify and reduce to room temperature up to liquid state, open bell 4, take out silicon ingot, cut the higher polysilicon of silicon ingot top metal foreign matter content, can obtain the lower polycrystal silicon ingot of phosphorus and metals content impurity.
Embodiment 2
The equipment of a kind of shallow pool vacuum melting purifying polycrystalline silicon as shown in Figure 1, its equipment constitutes vacuum apparatus by bell 4 and vacuum furnace wall 18, and the inner chamber of vacuum apparatus is vacuum chamber 3.Vacuum chamber 3 bottoms fixed installation base for supporting 16, ruhmkorff coil 12, graphite sleeve 11 and heat preservation carbon felt 10 are installed on the base for supporting 16 from outside to inside, graphite sleeve 11 is used for heating to the silicon material in early days and under the nonconducting situation of silicon material of induction heating, heat preservation carbon felt 10 is used for the directional freeze process and prevents that heat scatters and disappears from sidewall, vacuum chamber bottom in the base for supporting 16 is equipped with water-cooled and draws spindle blade 17, graphite block 15 is installed on water-cooled and draws on the spindle blade 17, and smelting pot 13 is installed on the graphite block 15.
On vacuum chamber 3 top exterior walls lifting electric device 1 is installed, lifter drawing bar 2 upper ends link to each other with lifting electric device 1, the lifter drawing bar lower end is passed vacuum furnace wall 18 and is connected on the interior suspension gripping unit of vacuum chamber, lifting electric device 1 can drive lifter drawing bar 2 and move up and down, its movement velocity can be regulated, and speed is between 10mm/min-200mm/min.
Hang gripping unit and be installed on lifter drawing bar 2 bottoms, and can be that rotate in the axle center, also can maintain static with lifter drawing bar 2; Hang gripping unit by fixer 5, rotation axis 6, binding clasp 7, fishbolt 8 constitutes, fixer 5 is loaded on lifter drawing bar 2 bottoms, fixer 5 two ends symmetric positions are equipped with two rotation axiss 6, a binding clasp 7 is installed on each rotation axis, is connected by fishbolt 8 between fixer and the binding clasp; Hang gripping unit and can clamp circle, square or erose silicon rod, in the time of the dress silicon rod, suspension is stepped up device rise to the limes superiors position, open fishbolt 8, binding clasp and fixer are opened certain space, silicon rod is easily clamped one to be stretched among this space, fishbolt is connected between binding clasp and the fixer, screws to fix behind the bolt and hang silicon rod, hang the silicon ingot quality as design in this example and be 20kg to the maximum.
Between lifter drawing bar and the vacuum furnace wall sealing-ring is installed and seals, thereby guarantee that lifter drawing bar can not leak gas in the rise and fall process and between the furnace wall, thereby guarantee that vacuum tightness can not change.
Adopt embodiment 2 described equipment to carry out the method for shallow pool vacuum melting purifying polycrystalline silicon, its concrete steps are as follows:
The first step is got the raw materials ready: fall pull bar 2 by promoting on the lifting electric device 1, lifter drawing bar 2 drives the suspension gripping unit and rises to the limes superiors position, adding 500g content of impurities is 0.0002% high purity polycrystalline silicon material in smelting pot 13, the foreign matter of phosphor content that then 4 quality is 1000g is respectively 0.0012%, 0.0015%, 0.0010%, 0.0013%, the metallic impurity total content is respectively 0.013%, 0.011%, 0.017%, 0.019%, and the polysilicon pole of quality is clamped in and hangs on the gripping unit;
The second step pre-treatment: after closing bell 4, adopt mechanical pump 20, lobe pump 21 and 22 pairs of equipment extracting vacuum of diffusion pump respectively, vacuum chamber 3 is extracted into high vacuum 0.0009Pa; Draw in the spindle blade 17 to water-cooled to feed water coolant, make its temperature maintenance at 40 ℃;
The 3rd step melted silicon material: give ruhmkorff coil 12 energisings, under 1440 ℃ condition, melt high purity polycrystalline silicon material in the smelting pot 13 by induction heating, form the HIGH-PURITY SILICON liquation, and keep liquid state, the fusing back increases the power of ruhmkorff coil 12 fully, makes the melted silicon temperature reach 1600 ℃;
The 4th step purified: drive lifter drawing bar 2 suspension gripping units by lifting electric device 1 and move downward, the feasible high phosphorus that hangs on HIGH-PURITY SILICON liquation 14 tops, high metal silicon rod 9 with the speed of 20mm/min downward vertically, extend among the melted silicon slowly, high phosphorus, high Pure Silicon Metal nose constantly melts the formation high phosphorus, the shallow-layer molten bath of high metal, foreign matter of phosphor constantly evaporates in the shallow-layer molten bath and obtains removing, treat high phosphorus at last, after high metal silicon rod fuses into the molten bath fully, induction heating makes in the smelting pot 13 and liquidly to keep 10min under 1500 ℃ of temperature, draw spindle blade 17 to pull down ingot by water-cooled, carry out directional freeze, metallic impurity are assembled to the liquation top, all solidify up to liquid state, stop to draw ingot and stop to ruhmkorff coil 12 energising, continue to vacuumize 30min, open purging valve 19 venting, open bell 4, take out silicon ingot, cut the higher polysilicon of silicon ingot top metal foreign matter content, can obtain the lower polycrystal silicon ingot of phosphorus and metals content impurity.(ICP-MS) detects, and the content of boron is reduced to below 0.0001%, and the metallic impurity total content is reduced to below 0.00018%, has reached the service requirements of solar level silicon materials through ELAN DRC-II type inductively coupled plasma mass spectrograph equipment.
Claims (10)
1. the method for a shallow pool vacuum melting purifying polycrystalline silicon, it is characterized in that: get the raw materials ready, after the pre-treatment, elder generation's melted silicon material: under vacuum tightness is high vacuum condition below the 0.001Pa, in smelting pot, melt the high purity polycrystalline silicon material earlier by induction heating 1430-1460 ℃, form the HIGH-PURITY SILICON liquation, and make it keep liquid, and increase the power of ruhmkorff coil then, make the melted silicon temperature reach 1500-1600 ℃; Purify again: high phosphorus, high metal silicon rod adds among the melted silicon continuously slowly, high phosphorus, high metal silicon rod is constantly melted by bottom to upper end and forms high phosphorus, the shallow-layer molten bath of high metal, foreign matter of phosphor constantly evaporates in the shallow-layer molten bath and obtains removing, treat high phosphorus at last, after high metal silicon rod fuses into the molten bath fully, induction heating makes in the smelting pot and liquidly to keep for some time under 1450-1500 ℃ of temperature, draw spindle blade to pull down ingot by water-cooled, carry out directional freeze, metallic impurity are assembled to the liquation top, all solidify and reduce to room temperature up to liquid state, open bell, take out silicon ingot, cut the higher polysilicon of silicon ingot top metal foreign matter content, can obtain the lower polycrystal silicon ingot of phosphorus and metals content impurity.
2. the method for a kind of shallow pool vacuum melting purifying polycrystalline silicon according to claim 1 is characterized in that: it is to extend into vertically, slowly among the melted silicon by the silicon rod that hangs the high phosphorus that gripping unit will hang on the melted silicon top, high metal that described high phosphorus, high metal silicon rod add continuously slowly.
3. the method for a kind of shallow pool vacuum melting purifying polycrystalline silicon according to claim 1, it is characterized in that: described getting the raw materials ready: fall pull bar by promoting on the lifting electric device, make that hanging gripping unit rises to the limes superiors position, in smelting pot, add 500-1500g high purity polycrystalline silicon material, 2 or 4 high phosphorus, high metal silicon rods are clamped in hang on the gripping unit then.
4. the method for a kind of shallow pool vacuum melting purifying polycrystalline silicon according to claim 1, it is characterized in that: described pre-treatment: after closing bell, adopt mechanical pump, lobe pump and diffusion pump to the equipment extracting vacuum respectively, vacuum chamber is extracted into below the high vacuum 0.001Pa; Draw to water-cooled to feed water coolant in the spindle blade, make its temperature maintenance at 30-40 ℃.
5. the method for a kind of shallow pool vacuum melting purifying polycrystalline silicon according to claim 1, it is characterized in that: described melted silicon material: switch on to ruhmkorff coil, under 1430-1460 ℃ condition, melt high purity polycrystalline silicon material in the smelting pot by induction heating, form the HIGH-PURITY SILICON liquation, and keep liquid state, the fusing back increases the power of ruhmkorff coil fully, makes the melted silicon temperature reach 1500-1600 ℃.
6. the method for a kind of shallow pool vacuum melting purifying polycrystalline silicon according to claim 1, it is characterized in that: described purification: move downward by lifting electric device drive lifter drawing bar and suspension gripping unit, the feasible high phosphorus that hangs on HIGH-PURITY SILICON liquation top, high metal silicon rod with the speed of 20mm-100mm/min downward vertically, extend among the melted silicon slowly, high phosphorus, high Pure Silicon Metal nose constantly melts the formation high phosphorus, the shallow-layer molten bath of high metal, foreign matter of phosphor constantly evaporates in the shallow-layer molten bath and obtains removing, treat high phosphorus at last, after high metal silicon rod fuses into the molten bath fully, induction heating makes in the smelting pot and liquidly to keep 10-30min under 1450-1500 ℃ of temperature, draw spindle blade to pull down ingot by water-cooled, carry out directional freeze, metallic impurity are assembled to the liquation top, all solidify up to liquid state, stop to draw ingot and stop to switch on to ruhmkorff coil, continue to vacuumize 20-30min, open the purging valve venting, open bell, take out silicon ingot, cut the higher polysilicon of silicon ingot top metal foreign matter content, can obtain the lower polycrystal silicon ingot of phosphorus and metals content impurity.
7. the equipment of a shallow pool vacuum melting purifying polycrystalline silicon, it is characterized in that: equipment constitutes vacuum apparatus by bell and vacuum furnace wall, the inner chamber of vacuum apparatus is vacuum chamber, the vacuum chamber bottom is equipped with ingot pulling mechanism, melting crucible is installed on the ingot pulling mechanism, melting crucible is equipped with heating unit outward, the lifting electric device is installed on the vacuum chamber top exterior walls, the lifting electric device drives and connects the lifter drawing bar upper end, the lifter drawing bar lower end is passed the vacuum furnace wall and is connected on the interior suspension gripping unit of vacuum chamber, hangs gripping unit and is positioned at the melting crucible top.
8. the equipment of a kind of shallow pool vacuum melting purifying polycrystalline silicon according to claim 7, it is characterized in that: described suspension gripping unit is by fixer, rotation axis, binding clasp, fishbolt constitutes, fixer is loaded on the lifter drawing bar bottom, fixer two ends symmetric position is equipped with two rotation axiss, a binding clasp is installed on each rotation axis, is connected by fishbolt between fixer and the binding clasp; The suspension gripping unit is fixed or is rotated and is installed on the lifter drawing bar bottom.
9. the equipment of a kind of shallow pool vacuum melting purifying polycrystalline silicon according to claim 7 is characterized in that: between described lifter drawing bar and the vacuum furnace wall sealing-ring is installed and seals; Described suspension gripping unit can clamp circle, square or erose silicon rod.
10. the equipment of a kind of shallow pool vacuum melting purifying polycrystalline silicon according to claim 7 is characterized in that: described ingot pulling mechanism adopts graphite block to be installed on water-cooled and draws on the spindle blade, and smelting pot is installed on the graphite block; Described heating unit is made of ruhmkorff coil, graphite sleeve and heat preservation carbon felt, and ruhmkorff coil, graphite sleeve and heat preservation carbon felt are installed on the base for supporting from outside to inside, and base for supporting is fixedly mounted on outside the ingot pulling mechanism of vacuum chamber bottom.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102424388A (en) * | 2011-09-13 | 2012-04-25 | 山西纳克太阳能科技有限公司 | Method for removing metallic impurities in solar-grade polysilicon |
| CN104195636A (en) * | 2014-09-01 | 2014-12-10 | 大连理工大学 | Method for rapidly preparing boron master alloy by using metallurgy method |
| CN113574341A (en) * | 2019-03-19 | 2021-10-29 | 赛峰集团陶瓷 | Support tool for infiltrating porous preforms and oven using same |
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| CN101289188A (en) * | 2008-05-30 | 2008-10-22 | 大连理工大学 | Process and device for removing phosphorus and metal impurities in polycrystalline silicon |
| CN101318655A (en) * | 2008-06-19 | 2008-12-10 | 大连理工大学 | Method and device for removing foreign matter of phosphor in polysilicon |
| CN202046890U (en) * | 2011-05-16 | 2011-11-23 | 大连隆田科技有限公司 | Device for purifying polysilicon through vacuum melting of shallow molten pool |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101289188A (en) * | 2008-05-30 | 2008-10-22 | 大连理工大学 | Process and device for removing phosphorus and metal impurities in polycrystalline silicon |
| CN101318655A (en) * | 2008-06-19 | 2008-12-10 | 大连理工大学 | Method and device for removing foreign matter of phosphor in polysilicon |
| CN202046890U (en) * | 2011-05-16 | 2011-11-23 | 大连隆田科技有限公司 | Device for purifying polysilicon through vacuum melting of shallow molten pool |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102424388A (en) * | 2011-09-13 | 2012-04-25 | 山西纳克太阳能科技有限公司 | Method for removing metallic impurities in solar-grade polysilicon |
| CN102424388B (en) * | 2011-09-13 | 2013-02-27 | 山西纳克太阳能科技有限公司 | Method for removing metallic impurities in solar-grade polysilicon |
| CN104195636A (en) * | 2014-09-01 | 2014-12-10 | 大连理工大学 | Method for rapidly preparing boron master alloy by using metallurgy method |
| CN113574341A (en) * | 2019-03-19 | 2021-10-29 | 赛峰集团陶瓷 | Support tool for infiltrating porous preforms and oven using same |
| CN113574341B (en) * | 2019-03-19 | 2023-10-27 | 赛峰集团陶瓷 | Support tool for infiltration of porous preforms and oven using said tool |
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| CN102145895B (en) | 2012-10-03 |
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