CN102136393B - Gating switch array and application method thereof - Google Patents
Gating switch array and application method thereof Download PDFInfo
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- CN102136393B CN102136393B CN 201010591577 CN201010591577A CN102136393B CN 102136393 B CN102136393 B CN 102136393B CN 201010591577 CN201010591577 CN 201010591577 CN 201010591577 A CN201010591577 A CN 201010591577A CN 102136393 B CN102136393 B CN 102136393B
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- gating switch
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Abstract
The invention discloses a gating switch array and an application method thereof. In the gating switch array, an insulating interval layer is arranged between an upper substrate and a lower substrate, and the insulating interval layer, the upper substrate and the lower substrate form a micro fluid cavity; n (n is more than or equal to 2) microelectrodes which are arranged circumferentially and uniformly are arranged on the upper surface of the lower substrate; and the upper substrate and the lower substrate are made of transparent materials. The gating switch array overcomes the defects of lowexpandability and low flexibility of the connection of linear parallel microelectrodes, realizes quick gating connection among the microelectrodes which are arranged circumferentially in combination with an optical tweezer technology and a dielectrophoresis technology, and has a simple structure, small volume, stable functions, high accuracy and low manufacturing cost.
Description
Technical field
The present invention relates to a kind of gating switch array and application process thereof.
Background technology
Existing integrated circuit generally adopts transistor to realize the switching gate of circuit, but transistorized volume size is difficult to the more microminiaturized demand of adaptation device circuitry, and expense is also comparatively high.If metal nanometer line, semiconductor nanowires etc. directly as contactor, are communicated with little/nano circuit, can further satisfy microminiaturized requirement.At present, the scientific research personnel uses the straight line parallel microelectrode array, and the accurate connection of the little/nano circuit that utilizes dielectrophoretic force to realize, but usually single bundle nano wire can only be realized connecting to microelectrode to fixing certain, and can't realize multichannel little/nano circuit dynamically or selectivity connect and flexible integration.
Summary of the invention
The technical problem to be solved in the present invention is in the existing integrated circuit, and the transistor selection switch arrays are not suitable with the demand of device circuitry microminiaturization, the nanowire circuit switch be difficult to realize multichannel little/nano circuit dynamically or selectivity connect and flexible integration.
For solving the problems of the technologies described above, the technical solution used in the present invention is: a kind of gating switch array, it is characterized in that, and between upper substrate and the infrabasal plate dielectric spacer layer is set, the three consists of the miniflow body cavity; The infrabasal plate upper surface is provided with n(n 〉=2) root is circle-shaped microelectrode of evenly arranging, and described upper substrate and lower substrate are transparent material.
In the design, adopt transparent upper and lower base plate, be convenient to laser beam and form the light tweezer by substrate, also the convenient operation person observes; Described smooth tweezer is a kind of light field of utilizing laser beam to move small items in the prior art, this light field can form a zone that potential energy is lower, be to have potential barrier inside and outside the zone, when the kinetic energy of particulate is not enough to overcome this potential barrier, particle will rest in the ligh trap all the time; Therefore, by mobile beam, can realize the migration of particle is handled; Per two different microelectrodes all can form a microelectrode pair; After removing the light tweezer, to being communicated with voltage, utilize the dielectrophoretic force under the inhomogeneous field that nano wire bundle is connected to tip location between the microelectrode at microelectrode, can realize gating circuit.Nano wire between certain two microelectrode that existing straight line parallel microelectrode array can only be realized fixing connects, and the area that takies is relatively bigger than normal, integration is low, be communicated with often very difficult the realization for the selectivity between any microelectrode on the linear array, and confusion, overlap joint, dislocation that nano wire connects easily occur, the limited scalability that the peripheral function circuit is connected.Among the present invention, microelectrode is circle-shaped arranges, and can make single bundle nano wire realize that the quick gating between circle-shaped any microelectrode of arranging connects, and has improved extensibility and the integrated flexibility of peripheral function circuit.The interior adjacent microelectrode spacing of described miniflow body cavity is tens to hundreds of times of nanowire diameter, and the sectional area of miniflow body cavity will be decided according to the number of the electrode of arranging, and does not wait at several square microns to square centimeter; The thickness of wall tens between the hundreds of micron;
For making things convenient in the integrated circuit the accurate control of switching gate, also be provided with micropore on the upper substrate.Micropore is mainly used in connecting transfusion catheter, because accurately control need to be regulated the endoceliac solution amount of miniflow at any time, therefore, the micropore operating personnel that are more convenient for is set regulates on demand.
As a kind of improvement project of the present invention, an end of microelectrode is taper or circular tip.Be designed with like this to be beneficial to and improve the local electric field strength that forms between microelectrode.
Advantage of the present invention is: described gating switch array has overcome the straight line parallel microelectrode and has connected poor expandability, flexible lower defective, in conjunction with optical tweezer technology and dielectrophoresis technology, realized that the quick gating between circle-shaped any microelectrode of arranging connects, it is simple in structure, volume is little, function-stable, precision is high and cost of manufacture is cheap.
Description of drawings
Fig. 1 is the structural representation of gating switch array of the present invention;
To be that microelectrode of the present invention is circle-shaped arrange and the schematic cross-section of microfluid cavity configuration Fig. 2;
Fig. 3 is gating switch array schematic diagram of the present invention;
Fig. 4 is that gating switch array of the present invention practices the method schematic diagram.
Embodiment
Below in conjunction with accompanying drawing gating switch array of the present invention is described further.
Shown in Fig. 1 to 2, between upper substrate 2 and the infrabasal plate 3 dielectric spacer layer 4 is set, the miniflow body cavity 5 that the three consists of; Also be provided with micropore 21 on the upper substrate, the upper surface of infrabasal plate 3 is provided with 8 and is the circle-shaped microelectrode of evenly arranging 1, and the tip of microelectrode 1 is taper, and two different microelectrodes 1 can form microelectrode pair; Upper substrate 2 and lower substrate 3 are the transparent material that glass or polymer are made; Laser beam 6 pass substrate 2 form can in order to catch and mobile nano wire to the light tweezer that needs the position; Then, to adding voltage, nano wire is connected at the microelectrode of needs, can reach the function of switching gate.
As shown in Figure 4, the miniflow body cavity of gating switch array is built-in with the certain density nano wire solution for preparing, when laser beam 6 enters miniflow body cavity 5 when interior from upper substrate 2 projection, the light field that is produced by laser beam 6 will produce the effect of clamping down on to the nano wire in the solution, can catch single or a branch of nano wire, the nano wire of this moment has certain hoverheight.By mobile beam, nano wire is moved to the right central area of gating microelectrode; Remove subsequently the effect of light tweezer, because the density of nano wire can present the trend of natural subsidence greater than solution medium density.Then utilize programmable waveform generator 8 at specific microelectrode to applying AC signal, at this moment microelectrode between the zone can produce inhomogeneous field, apply intensity and the frequency of signal by Programmable Logic Controller 81 controls, can make nano wire between two microelectrode 1 tips, realize putting up a bridge and connect.If the microelectrode that need to change is communicated with pair only needs after removing voltage, utilize first the light tweezer with the nano wire translation or turn to convenient zone, between another is to microelectrode 1, apply AC signal, then nano wire will be at another to 1 realization bridge joint of microelectrode.Each root microelectrode 1 all can link to each other with a certain specific microcircuit module 9, so just can connect microelectrode 1 by control nano wire gating, thereby realize being interconnected with integrated between the different microcircuit modules 9, finishes specific function.
As shown in Figure 3, gating switch array can also be made into array pattern, be integrated on the chip piece, if be integrated with 36 gating switch arrays on the chip, and each gating switch array has 4 electrodes, utilize the just combination break-make between 36 * 4 microcircuit modules of simultaneously maximum control of chip piece, thereby greatly improved integrated degree.In addition, the size shape of each gating switch array on the gating switch array array chip can be identical, also can the identical or whole differences of part, and to satisfy the demand of different expanded functions.
Claims (5)
1. a gating switch array is characterized in that, between upper substrate (2) and the infrabasal plate (3) dielectric spacer layer (4) is set, and the three consists of miniflow body cavity (5); Infrabasal plate (3) upper surface is provided with n＞2 and piece is circle-shaped microelectrode of evenly arranging (1), and described upper substrate (2) and infrabasal plate (3) are transparent material.
2. gating switch array according to claim 1 is characterized in that, also is provided with micropore (21) on the upper substrate (2).
3. gating switch array according to claim 1 and 2 is characterized in that, an end of microelectrode (1) is taper or circular tip.
4. the application process of gating switch array according to claim 1 is characterized in that:
The solution that 1) will contain nano wire injects miniflow body cavity (5), then covers upper substrate (2), perhaps injects continuously solution by the micropore on the upper substrate (21);
2) behind the solution Uniform Dispersion, advance laser beam (6) from upper substrate (2) projection, after mobile beam makes nano wire bundle migrate to the specific region, remove laser beam (6);
3) between corresponding microelectrode (1), apply voltage signal and adjust exciting signal frequency, make nano wire bundle be connected to corresponding microelectrode between the tip, realize the connection of little/nano circuit; The gate action of switch is by after removing voltage signal, repeating step 3) aforesaid operations realizes.
5. the application process of gating switch array according to claim 4 is characterized in that, the voltage signal that applies at microelectrode (1) is sinusoidal signal or the superposed signal of some sinusoidal signals.
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| CN 201010591577 CN102136393B (en) | 2010-12-16 | 2010-12-16 | Gating switch array and application method thereof |
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| CN 201010591577 CN102136393B (en) | 2010-12-16 | 2010-12-16 | Gating switch array and application method thereof |
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| CN102136393A CN102136393A (en) | 2011-07-27 |
| CN102136393B true CN102136393B (en) | 2013-10-16 |
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| CN104950077B (en) * | 2014-06-06 | 2017-10-24 | 浙江北微信息科技有限公司 | nanowire sensor chip preparation method |
| CN105004759B (en) * | 2014-06-06 | 2019-05-31 | 浙江北微信息科技有限公司 | The preparation of nanowire sensor wafer level and packaging method |
| WO2022178903A1 (en) * | 2021-02-28 | 2022-09-01 | 浙江大学 | Method and device for manufacturing microdevice |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007136799A3 (en) * | 2006-05-18 | 2008-01-10 | Univ Florida | Ic microfluidic platform with integrated magnetic resonance probe |
| CN101544351A (en) * | 2009-05-08 | 2009-09-30 | 东南大学 | Low-dimensional nanophase material high-flexibility assembling chip and application method |
| CN201918314U (en) * | 2010-12-16 | 2011-08-03 | 东南大学 | Gating switch array |
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| US20090062913A1 (en) * | 2007-08-30 | 2009-03-05 | Laxminarayana Saggere | Light powered microactuator, microfluidic dispenser and retinal prosthesis |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007136799A3 (en) * | 2006-05-18 | 2008-01-10 | Univ Florida | Ic microfluidic platform with integrated magnetic resonance probe |
| CN101544351A (en) * | 2009-05-08 | 2009-09-30 | 东南大学 | Low-dimensional nanophase material high-flexibility assembling chip and application method |
| CN201918314U (en) * | 2010-12-16 | 2011-08-03 | 东南大学 | Gating switch array |
Non-Patent Citations (2)
| Title |
|---|
| 基于介电泳的细胞介电参数测试芯片机理的数值分析;朱晓璐等;《机械工程学报》;20091130;第45卷(第11期);197-204 * |
| 朱晓璐等.基于介电泳的细胞介电参数测试芯片机理的数值分析.《机械工程学报》.2009,第45卷(第11期), |
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