CN102130121B - Serial connection structure of polycrystalline silicon diodes - Google Patents
Serial connection structure of polycrystalline silicon diodes Download PDFInfo
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- CN102130121B CN102130121B CN201010027315A CN201010027315A CN102130121B CN 102130121 B CN102130121 B CN 102130121B CN 201010027315 A CN201010027315 A CN 201010027315A CN 201010027315 A CN201010027315 A CN 201010027315A CN 102130121 B CN102130121 B CN 102130121B
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Abstract
The invention discloses a serial connection structure of polycrystalline silicon diodes. A plurality of contact holes for leading out metal wires are formed on N-type polysilicon and P-type polysilicon on the junction of two adjacent polysilicon diodes on a layout plate, wherein all the contact holes are simultaneously located on the N-type polysilicon and the P-type polysilicon on the junction of two adjacent polysilicon diodes on the layout plate, and the a first metal layer covers the contact holes and is connected with the metal wires lead out via the contact holes. The serial connection structure of the polycrystalline silicon diodes can realize high electrostatic current discharge reliability under the condition of occupying smaller layout plate.
Description
Technical field
The present invention relates to semiconductor technology, particularly a kind of cascaded structure of polysilicon diode.
Background technology
Because polysilicon diode separates with silicon substrate, there is not body effect, parasitic capacitance is little, and therefore plural serial stage easily is used on the electrostatic protection of input and output pin of radio frequency technology.Its protection form is as shown in Figure 1 usually.Along with the increase of the series connection progression of polysilicon diode, the parasitic capacitance on the input and output pin can reduce rapidly.In electrostatic protection, this polysilicon diode is only at the forward condition conducting electrostatic induced current of releasing, so the length of the width that needed by forward conduction of the chip area of this polysilicon diode and every level polysilicon diode determines.If realize less parasitic capacitance, need plural serial stage, at this moment the cascaded structure of polysilicon diode is also very important to the safety relief of the influence of chip area and electrostatic induced current.
Usually the cascaded structure of polysilicon diode as shown in Figures 2 and 3.The cascaded structure of polysilicon diode shown in Figure 2; Be on the N of adjacent two polysilicon diodes type polysilicon and P type polysilicon, to form a plurality of contact holes respectively to draw metal wire; Through metal level contact hole being drawn metal wire then links together; Realize the series connection of polysilicon diode, but the cascaded structure of polysilicon diode shown in Figure 2, owing to need on adjacent two polysilicon diodes, to form contact hole respectively; Need N type polysilicon and the spacing of P type polysilicon and the bag hole dimension that lays respectively at the contact hole on it of adjacent two polysilicon diodes, bigger to taking of chip area.The cascaded structure of polysilicon diode shown in Figure 3 is on the N of adjacent two polysilicon diodes type polysilicon and P type polysilicon, directly to generate the layer of metal silicide, utilizes this layer metal silicide to realize the series connection of polysilicon diode; The electrostatic induced current of releasing; But the cascaded structure of polysilicon diode shown in Figure 3, because the resistance of this layer metal silicide is bigger, and the requirement of the leakage current of electrostatic protection is very big; Reliability when being difficult to guarantee the electrostatic protection discharge; There is certain failure risk,, needs bigger connection width for reducing the resistance of this layer metal silicide.
Summary of the invention
The technical problem that the present invention will solve provides a kind of cascaded structure of polysilicon diode, can under the situation that less domain takies, realize the high electrostatic induced current reliability of releasing.
For solving the problems of the technologies described above; The cascaded structure of polysilicon diode of the present invention; On the N type polysilicon of adjacent two polysilicon diode intersections on the domain and P type polysilicon, form a plurality of contact holes and draw metal wire; Said each contact hole is positioned on the N type polysilicon and P type polysilicon of adjacent two polysilicon diode intersections on the domain simultaneously, and is covered with the ground floor metal on the said contact hole and draws metal wire with said contact hole and connect.
Can on the N type polysilicon of adjacent two polysilicon diode intersections on the domain and P type polysilicon, generate the layer of metal silicide; On this layer metal silicide, form a plurality of contact holes and draw metal wire; Said each contact hole is positioned on the N type polysilicon and P type polysilicon of adjacent two polysilicon diode intersections on the domain simultaneously, and is covered with the ground floor metal on the said contact hole and draws metal wire with said contact hole and connect.
Can form on said ground floor metal that a plurality of contact holes are drawn metal wire and on this contact hole, cover second layer metal and draw metal wire with this contact hole and connect.
The cascaded structure of polysilicon diode of the present invention; Because each contact hole that on the N type polysilicon of adjacent two polysilicon diode intersections on the domain and P type polysilicon, forms is a slotted hole; Be positioned at simultaneously on the N type polysilicon and P type polysilicon of adjacent two polysilicon diode intersections on the domain, do not need the spacing of adjacent two polysilicon diode N type polysilicons and P type polycrystalline, and do not have the size in polysilicon contact hole bag hole; Therefore chip area is less; And electrostatic induced current can not only pass through metal silicide at the place that is connected in series of two polysilicon diodes, and the contact hole and the ground floor metal that also pass through on it are released, and make the resistance of cascaded structure less; Thereby improve the polysilicon diode cascaded structure under big electric current, particularly the reliability during static discharge.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed description.
Fig. 1 is to use the electrostatic discharge protective circuit sketch map of polysilicon diode;
Fig. 2 is a kind of cascaded structure sketch map of common polysilicon diode;
Fig. 3 is the cascaded structure sketch map of another kind of common polysilicon diode;
Fig. 4 is the cascaded structure one execution mode sketch map of polysilicon diode of the present invention;
Fig. 5 is another execution mode sketch map of cascaded structure of polysilicon diode of the present invention.
Embodiment
Cascaded structure one execution mode of polysilicon diode of the present invention is as shown in Figure 4; On the N type polysilicon of adjacent two polysilicon diode intersections on the domain and P type polysilicon, form a plurality of contact holes and draw metal wire; Said each contact hole is a slotted hole; Be positioned at simultaneously on the N type polysilicon and P type polysilicon of adjacent two polysilicon diode intersections on the domain; And be covered with the ground floor metal on the said contact hole and draw the metal wire connection with said contact hole, this contact hole covering on said N type polycrystalline and P type polycrystalline satisfied under the technological requirement, covers bigger area as far as possible.
Another execution mode of the cascaded structure of polysilicon diode of the present invention is as shown in Figure 5; On the N type polysilicon of adjacent two polysilicon diode intersections on the domain and P type polysilicon, generate the layer of metal silicide; On this layer metal silicide, form a plurality of contact holes and draw metal wire; Said each contact hole is a slotted hole, is positioned at simultaneously on the N type polysilicon and P type polysilicon of adjacent two polysilicon diode intersections on the domain, and is covered with the ground floor metal on the said contact hole and draws metal wire with said contact hole and connect; This contact hole covering on said N type polycrystalline and P type polycrystalline satisfied under the technological requirement, covers bigger area as far as possible.
Can form on the ground floor metal of the cascaded structure of above-mentioned polysilicon diode that a plurality of contact holes are drawn metal wire and on this contact hole, cover second layer metal and draw metal wire with this contact hole and connect, further reduce the cascaded structure conducting resistance of polysilicon diode.Can continue on this structure, to pile up and place contact hole and other metal, further reduce conducting resistance.
The cascaded structure of polysilicon diode of the present invention; Because each contact hole that on the N type polysilicon of adjacent two polysilicon diode intersections on the domain and P type polysilicon, forms is a slotted hole; Be positioned at simultaneously on the N type polysilicon and P type polysilicon of adjacent two polysilicon diode intersections on the domain; Do not need the spacing of adjacent two polysilicon diode N type polysilicons and P type polycrystalline, and do not have the size in polysilicon contact hole bag hole, therefore the cascaded structure than common polysilicon diode shown in Figure 2 is little on chip area; And compare with the cascaded structure of common polysilicon diode shown in Figure 3; The cascaded structure of polysilicon diode of the present invention, electrostatic induced current can not only pass through metal silicide at the place that is connected in series of two polysilicon diodes, also releases through contact hole and ground floor metal on it; Make the resistance of cascaded structure less; Thereby improve the polysilicon diode cascaded structure under big electric current, the reliability during static discharge particularly, the cascaded structure of polysilicon diode of the present invention can be realized the high electrostatic induced current reliability of releasing under the situation that less domain takies thus.
Claims (3)
1. the cascaded structure of a polysilicon diode; It is characterized in that; On the N type polysilicon of adjacent two polysilicon diode intersections on the domain and P type polysilicon, form a plurality of contact holes and draw metal wire; Said each contact hole is positioned on the N type polysilicon and P type polysilicon of adjacent two polysilicon diode intersections on the domain simultaneously, and is covered with the ground floor metal on the said contact hole and draws metal wire with said contact hole and connect.
2. the cascaded structure of polysilicon diode according to claim 1; It is characterized in that; On the N type polysilicon of adjacent two polysilicon diode intersections on the domain and P type polysilicon, generate the layer of metal silicide, on this layer metal silicide, form said a plurality of contact holes and draw metal wire.
3. the cascaded structure of polysilicon diode according to claim 1 and 2 is characterized in that, a plurality of contact holes of formation are drawn metal wire and on this contact hole, covered second layer metal and draw the metal wire connection with this contact hole on said ground floor metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010027315A CN102130121B (en) | 2010-01-20 | 2010-01-20 | Serial connection structure of polycrystalline silicon diodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010027315A CN102130121B (en) | 2010-01-20 | 2010-01-20 | Serial connection structure of polycrystalline silicon diodes |
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| Publication Number | Publication Date |
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| CN102130121A CN102130121A (en) | 2011-07-20 |
| CN102130121B true CN102130121B (en) | 2012-10-03 |
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| CN201010027315A Active CN102130121B (en) | 2010-01-20 | 2010-01-20 | Serial connection structure of polycrystalline silicon diodes |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1353863A (en) * | 1999-04-22 | 2002-06-12 | 理查德·K·威廉斯 | Super-self-aligned trench-gate DMOS with reduced on-resistance |
| US6844596B2 (en) * | 2000-09-21 | 2005-01-18 | Mitsubishi Denki Kabushiki Kaisha | Si-MOS high-frequency semiconductor device |
| JP2005236224A (en) * | 2004-02-23 | 2005-09-02 | Sanken Electric Co Ltd | Semiconductor device |
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2010
- 2010-01-20 CN CN201010027315A patent/CN102130121B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1353863A (en) * | 1999-04-22 | 2002-06-12 | 理查德·K·威廉斯 | Super-self-aligned trench-gate DMOS with reduced on-resistance |
| US6844596B2 (en) * | 2000-09-21 | 2005-01-18 | Mitsubishi Denki Kabushiki Kaisha | Si-MOS high-frequency semiconductor device |
| JP2005236224A (en) * | 2004-02-23 | 2005-09-02 | Sanken Electric Co Ltd | Semiconductor device |
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| CN102130121A (en) | 2011-07-20 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131218 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20131218 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |