CN102130040A - Method for forming through-hole interconnection and metalizing contact of carbon nano tube - Google Patents
Method for forming through-hole interconnection and metalizing contact of carbon nano tube Download PDFInfo
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- CN102130040A CN102130040A CN2010105932771A CN201010593277A CN102130040A CN 102130040 A CN102130040 A CN 102130040A CN 2010105932771 A CN2010105932771 A CN 2010105932771A CN 201010593277 A CN201010593277 A CN 201010593277A CN 102130040 A CN102130040 A CN 102130040A
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Abstract
The invention relates to a method for forming the through-hole interconnection and metalizing contact of a carbon nano tube, which comprises the following steps of: depositing a dielectric layer on a substrate to form a through-hole structure of which the upper side is provided with an opening; growing the carbon nano tube in a through hole; depositing a barrier layer on the upper surface of the dielectric layer and the inner wall and bottom part of the through hole; filling residual air gaps in the through hole and the upper surface of the dielectric layer by using fillers; polishing the fillers and the barrier layer selectively by utilizing polishing solution and a chemically mechanical polishing process, so that the top end of the carbon nano tube is provided with an opening and sunken, bulged and flat structures are formed simultaneously; and depositing a conducting metal layer at the opening of the carbon nano tube, so that the conducting metal layer forms the metalizing contact with the integral carbon nano tube. The method has the advantages that the opening of the carbon nano tube can be formed without being scratched while the redundant carbon nano tube outside the through hole is removed by chemical mechanical planarization (CMP). In addition, other process steps are not required to be added in the process of forming the metalizing contact, so the method is simple in manufacturing steps and high in process compatibility.
Description
Technical field
The present invention relates to the integrated circuit interconnection technical field, particularly a kind of method that forms carbon nano-tube through-hole interconnection metallization contact.
Background technology
Constantly dwindle raising with the IC integrated level along with the electronic devices and components size, Cu wiring has successfully substituted original aluminium Wiring technique with its low-resistivity, advantage such as deelectric transferred in 1998, 's the favorite in device interconnection field over 10 years always, but further miniaturization along with characteristic size, the current density that interconnection line carried is increasing, is challenging the limit (10 of Cu interconnection line
6A/cm
2), after especially the ITRS Predicting Technique epoch enter 32 nanometers, the current load density of interconnection line will reach 10
7A/cm
2, this will surmount the conductive capability of Cu wiring, and along with the miniaturization of characteristic size, it is serious day by day that the resistance that electron scattering and crystal boundary scattering cause increases effect, forces the integrated circuit industry to seek novel interconnection material.The characteristics such as ballistic effect of the high current density of carbon nano-tube, high-termal conductivity and electron transport make it become the optimal selection of novel interconnection material.
Carbon nano-tube has become the research focus of the metal interconnected aspect of integrated circuit as candidate's interconnection material.Because carbon nano-tube is the cylinder of Graphene, its end is normally by comprising that pentacyclic end cap is closed, can't be directly and Metal Contact form effective conductive path, thereby caused very big contact resistance (sometimes up to 10k Ω), had a strong impact on the performance of through-hole interconnection.Japan Waseda University and MIRAI-Selete joint study group adopt improved plasma gas-phase deposit systems produce to go out multi-walled carbon nano-tubes, by chemico-mechanical polishing (Chemicai mechanical planarization, CMP) technology realizes the interconnection of carbon nano-tube and opens port, but still, carbon nano-tube and Metal Contact problem do not improve the big manyfold of W that the present connector of the resistance ratio that is obtained is commonly used.In the middle of the CMP technology extensive use integrated circuit interconnection, can make the dielectric layer planarization, realize highdensity multilayer wiring.The minimum sectional area of carbon nano-tube contradicts with having good the contact, and the conventional interconnection structure that uses carbon nano-tube to form at present can not utilize whole current density capacity of carbon nano-tube fully.The patent of Intel company: carbon nanotube interconnect contact (CN 101208793A) has just proposed the method with carbon nanotube interconnect contact in one deck, and fails to realize that through hole is the perpendicular interconnection contact.Therefore, how forming the through hole carbon nano-tube by technological design is the key issue of realization through-hole interconnection with the metal level excellent contact.The present invention utilizes filler that carbon nano-tube bundle is filled, utilize the CMP technology in the integrated circuit interconnection technology, to barrier layer, dielectric layer top selectivity polishing around filler and the through hole, form carbon nano-tube bundle top depression, projection or smooth structure, not only the outer tube of multi-walled carbon nano-tubes and interior pipe can participate in conduction substantially, also will effectively improve the contact area with metal, and improve electricity and lead ability.
Summary of the invention
The objective of the invention is at above-mentioned technical Analysis, a kind of method that forms carbon nano-tube through-hole interconnection metallization contact is provided, this method is opened the carbon nano-tube port and is formed mosaic texture by chemical-mechanical planarization, thereby reduce the contact resistance of through hole carbon nano-tube and metal level, improve the bearing capacity of through hole current density.
Technical scheme of the present invention:
A kind of method that forms carbon nano-tube through-hole interconnection metallization contact, step is as follows:
1) on substrate, deposits lower dielectric layer, on lower dielectric layer, prepare lower conductiving layer;
2) deposit one deck catalyst on the electricity layer down, depositing upper dielectric layer on dielectric layer and the catalyst layer down, then it is being carried out etching until exposing catalyst layer, forming the through-hole structure of top opening;
3) carbon nano-tube in through hole, carbon nano-tube are perpendicular to substrate, and the top of carbon nano-tube is higher than through hole upper end 50-200nm;
4) deposition one deck barrier layer on upper dielectric layer upper surface, through-hole wall and bottom;
5) with the upper surface that remains space and upper dielectric layer in the filler filling vias; Utilize polishing fluid and CMP (Chemical Mechanical Polishing) process to filler and the polishing of barrier layer selectivity, realize the carbon nano-tube top end opening, form depression, projection or smooth three kinds of structures simultaneously;
6) conductive metal deposition layer and form metallization with whole carbon nano-tube and contact on the carbon nano-tube opening.
Described barrier layer is tantalum nitride, titanium nitride, silica, silicon nitride, titanium, fluosilicate, fluorine silicon, SiCOH, organic silicide, Parylene or polyimides.
Described filler is the metal alloy of one or more arbitrary proportions among tantalum nitride, titanium nitride, silica, silicon nitride, fluosilicate, fluorine silicon, SiCOH, organic silicide, Cu, Al, Au, Pt, Pd, Rh, Ru, Os, Ag, Ir, Ti and the W, but can not be identical with the composition on described barrier layer.
The fill method of described filler is spin-coating method, magnetic sputtering method, ion beam sputtering, chemical vapour deposition technique, means of electron beam deposition or atomic layer deposition method.
Described conducting metal is the metal alloy of Cu, Al, Au, Pt, Pd, Rh, Ru, Os, Ag, Ir, Ti and one or more arbitrary proportions of W.
The manufacture method of described conductive metal layer is magnetic sputtering method, ion beam sputtering, chemical vapour deposition technique, means of electron beam deposition or atomic layer deposition method.
Advantage of the present invention is: when the outer unnecessary carbon nano-tube of through hole is removed with CMP, just can realize opening of carbon nano-tube port, and can not cause other scars.Utilize polishing fluid and CMP technology characteristics to removing in the alternative polishing of filler and barrier layer, can realize depression, projection or three kinds of smooth structures of carbon nano-tube, the conductive metal deposition layer can form the contact of through hole carbon nano-tube good metal on this structure.In the process that forms the metallization contact, do not need to increase other processing step, its making step is simple and processing compatibility good.
Description of drawings
Fig. 1 is the carbon nano-tube top depression profile of embodiment of the present invention.
Fig. 2 is the carbon nano-tube top bump profile of embodiment of the present invention.
Fig. 3 is the carbon nano-tube upper flat profile of embodiment of the present invention.
Embodiment
Embodiment:
The basic SiO uniformly of deposition on silicon substrate
2As lower dielectric layer.The following dielectric upper surface that utilizes photoresist image photoetching composition to be deposited according to the pattern of required lower conductiving layer copper is removed the dielectric portion of maskization not to produce the pattern of lower conductiving layer groove by reactive ion etching.
At SiO
2The entire upper surface of lower dielectric layer comprises depositing TiN in the groove/Ti barrier layer, and TiN is a ground floor, and Ti is the second layer, and then deposits the first conductive layer copper.Whole three layers by ald and deposited by physical vapour deposition (PVD).The TiN/Ti layer can prevent that copper migration is in lower dielectric layer and improve adhesiveness.
By copper rest layers and the barrier layer of chemico-mechanical polishing removal except groove, can pass through reactive ion etching lower conductiving layer groove then.In CMP, use copper etchant selectively, copper is removed quickly than lower dielectric layer, in groove, stay shallow slot.Comprise on the groove with the thick iron catalyst layer of ion beam sputtering 3nm at lower dielectric layer then.Remove SiO with chemico-mechanical polishing
2The catalyst layer on lower dielectric layer surface only leaves catalyst layer in shallow slot.Deposited silicon nitride barrier layer on the lower dielectric layer of polishing then deposits upper dielectric layer SiO
2, use suitable photoresist photoetching composition, remove SiO by reactive ion etching
2Not by the part of mask, form through hole, the through hole deepening is to catalyst layer.Remove the photoresist of upper dielectric layer top.
Iron suitably can catalysis form carbon nano-tube under the process conditions.Daughters such as present embodiment usefulness strengthen the chemical vapour deposition technique carbon nano-tube.C in the reactor
2H
2And H
2Admixture of gas, under about 400-700 ℃ temperature, kept 2-10 minute, catalytic pyrolysis is formed carbon nano-tube than the high 50-200nm in through hole upper end.C
2H
2And H
2Ratio about 1: 2-1: in 4 the scope.Select atomic layer deposition method on upper dielectric layer, through-hole wall and via bottoms depositing TiN/Ti barrier layer, use the upper surface of SOG filling vias and upper dielectric layer then.
Utilize polishing fluid SOG layer and barrier polishing to be removed the different of speed, remove the barrier layer, form carbon nano-tube depression (Fig. 1), projection (Fig. 2) or smooth (Fig. 3) structure with CMP (Chemical Mechanical Polishing) process.Take all factors into consideration the planarization effect, CMP was divided into for two steps carries out, the first step is earlier to top layer thicker carbon nano-tube and SiO
2The SOG layer of upper dielectric layer upper surface is removed, and forms the hatch frame of carbon nano-tube; Second step adopted different polishing fluids to carry out the selectivity planarization, realize low pressure planarization (＜2psi, to satisfy advanced low-k materials requirement low pressure polishing requirements among the following GLSI), and form carbon nano-tube projection, projection or flat configuration, note the surface clean behind each CMP.Form the carbon nano tube metal contact on the carbon nano-tube top with Metal Palladium deposited by physical vapour deposition (PVD), polish the palladium surface at last.
More than described a kind of CMP of utilization provided by the present invention by specific embodiment and make the carbon nano-tube bundle top form the method for metallization contact, but those skilled in the art will appreciate that the various modification that to make within the scope of the appended claims on form and the details; Its preparation method is not limited to disclosed content among the embodiment.
Claims (6)
1. one kind forms the method that the metallization of carbon nano-tube through-hole interconnection contacts, and it is characterized in that step is as follows:
1) on substrate, deposits lower dielectric layer, on lower dielectric layer, prepare lower conductiving layer;
2) deposit one deck catalyst on the electricity layer down, depositing upper dielectric layer on dielectric layer and the catalyst layer down, then it is being carried out etching until exposing catalyst layer, forming the through-hole structure of top opening;
3) carbon nano-tube in through hole, carbon nano-tube are perpendicular to substrate, and the top of carbon nano-tube is higher than through hole upper end 50-200nm;
4) deposition one deck barrier layer on upper dielectric layer upper surface, through-hole wall and bottom;
5) with the upper surface that remains space and upper dielectric layer in the filler filling vias; Utilize polishing fluid and CMP (Chemical Mechanical Polishing) process to filler and the polishing of barrier layer selectivity, realize the carbon nano-tube top end opening, form depression, projection or smooth three kinds of structures simultaneously;
6) conductive metal deposition layer and form metallization with whole carbon nano-tube and contact on the carbon nano-tube opening.
2. according to the method for the described formation carbon nano-tube of claim 1 through-hole interconnection metallization contact, it is characterized in that: described barrier layer is tantalum nitride, titanium nitride, silica, silicon nitride, titanium, fluosilicate, fluorine silicon, SiCOH, organic silicide, Parylene or polyimides.
3. according to the method for the described formation carbon nano-tube of claim 1 through-hole interconnection metallization contact, it is characterized in that: described filler is the metal alloy of one or more arbitrary proportions among tantalum nitride, titanium nitride, silica, silicon nitride, fluosilicate, fluorine silicon, SiCOH, organic silicide, Cu, Al, Au, Pt, Pd, Rh, Ru, Os, Ag, Ir, Ti and the W, but can not be identical with the composition on described barrier layer.
4. according to the method for the described formation carbon nano-tube of claim 1 through-hole interconnection metallization contact, it is characterized in that: the fill method of described filler is spin-coating method, magnetic sputtering method, ion beam sputtering, chemical vapour deposition technique, means of electron beam deposition or atomic layer deposition method.
5. according to the method for the described formation carbon nano-tube of claim 1 through-hole interconnection metallization contact, it is characterized in that: described conducting metal is the metal alloy of Cu, Al, Au, Pt, Pd, Rh, Ru, Os, Ag, Ir, Ti and one or more arbitrary proportions of W.
6. according to the method for the described formation carbon nano-tube of claim 1 through-hole interconnection metallization contact, it is characterized in that: the manufacture method of described conductive metal layer is magnetic sputtering method, ion beam sputtering, chemical vapour deposition technique, means of electron beam deposition or atomic layer deposition method.
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| CN2010105932771A CN102130040A (en) | 2010-12-17 | 2010-12-17 | Method for forming through-hole interconnection and metalizing contact of carbon nano tube |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456677A (en) * | 2012-06-05 | 2013-12-18 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method thereof |
| CN103996651A (en) * | 2013-02-19 | 2014-08-20 | 台湾积体电路制造股份有限公司 | Semiconductor devices and methods of manufacture thereof |
| CN106847790A (en) * | 2017-01-17 | 2017-06-13 | 华南理工大学 | The interconnection structure and its manufacture method of a kind of integrated CNT and Graphene |
| CN104011850B (en) * | 2011-12-27 | 2017-07-18 | 英特尔公司 | CNT semiconductor devices and certainty nano-fabrication methods |
| CN112838050A (en) * | 2021-02-05 | 2021-05-25 | 泉芯集成电路制造(济南)有限公司 | Semiconductor device and preparation method thereof |
| WO2023241275A1 (en) * | 2022-06-16 | 2023-12-21 | 京东方科技集团股份有限公司 | Substrate and preparation method therefor, and electronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050189655A1 (en) * | 2004-02-26 | 2005-09-01 | International Business Machines Corporation | Integrated circuit chip utilizing carbon nanotube composite interconnection vias |
| CN101208793A (en) * | 2005-06-08 | 2008-06-25 | 英特尔公司 | Carbon nanotube interconnect contacts |
-
2010
- 2010-12-17 CN CN2010105932771A patent/CN102130040A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050189655A1 (en) * | 2004-02-26 | 2005-09-01 | International Business Machines Corporation | Integrated circuit chip utilizing carbon nanotube composite interconnection vias |
| CN1926680A (en) * | 2004-02-26 | 2007-03-07 | 国际商业机器公司 | Integrated circuit chip utilizing carbon nanotube composite interconnection vias |
| CN101208793A (en) * | 2005-06-08 | 2008-06-25 | 英特尔公司 | Carbon nanotube interconnect contacts |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104011850B (en) * | 2011-12-27 | 2017-07-18 | 英特尔公司 | CNT semiconductor devices and certainty nano-fabrication methods |
| CN103456677A (en) * | 2012-06-05 | 2013-12-18 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method thereof |
| CN103996651A (en) * | 2013-02-19 | 2014-08-20 | 台湾积体电路制造股份有限公司 | Semiconductor devices and methods of manufacture thereof |
| US9484302B2 (en) | 2013-02-19 | 2016-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods of manufacture thereof |
| CN103996651B (en) * | 2013-02-19 | 2017-04-12 | 台湾积体电路制造股份有限公司 | Semiconductor devices and methods of manufacture thereof |
| CN106847790A (en) * | 2017-01-17 | 2017-06-13 | 华南理工大学 | The interconnection structure and its manufacture method of a kind of integrated CNT and Graphene |
| CN112838050A (en) * | 2021-02-05 | 2021-05-25 | 泉芯集成电路制造(济南)有限公司 | Semiconductor device and preparation method thereof |
| WO2023241275A1 (en) * | 2022-06-16 | 2023-12-21 | 京东方科技集团股份有限公司 | Substrate and preparation method therefor, and electronic device |
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Application publication date: 20110720 |