CN102122887A - Drive controller, power conversion circuit and method for modulating drive voltage along with load - Google Patents
Drive controller, power conversion circuit and method for modulating drive voltage along with load Download PDFInfo
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- CN102122887A CN102122887A CN2010100034029A CN201010003402A CN102122887A CN 102122887 A CN102122887 A CN 102122887A CN 2010100034029 A CN2010100034029 A CN 2010100034029A CN 201010003402 A CN201010003402 A CN 201010003402A CN 102122887 A CN102122887 A CN 102122887A
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Abstract
The invention relates to a drive controller, a power conversion circuit and a method for modulating a drive voltage along with a load by using the driving controller and the power conversion circuit, which are applied to the modulation of the drive voltage of a transistor in a power converter, wherein the drive controller comprises a parameter measuring unit, a voltage modulating unit and a drive control unit; the load of the power conversion circuit is measured by the parameter measuring unit to generate a load parameter value, and then the drive voltage of the transistor is modulated by the voltage modulating unit according to the load parameter value, so that the unnecessary power consumption of the transistor in the power conversion circuit is reduced and the operational efficiency of the whole power conversion circuit is increased.
Description
Technical field
The present invention relates to the method for a kind of driving governor and modulation driving voltage thereof, a kind of driving governor of the driving voltage by detecting load variation amount and then modulation driving governor and the method for modulation driving voltage thereof.
Background technology
In general power supply unit can be divided into linear formula power supply unit (Linear PowerSupply) and switched power supplier (Switched Mode Power Supply, SMPS), wherein switched power supplier has the benefit that volume is little, in light weight, efficient is high compared to linear formula power supply unit, help the lightweight and the miniaturization of the electronic product that is associated, therefore the design of switched power supplier just is widely used among the various electronic product at present.
As shown in fig. 1, be exactly a kind of typical synchronous rectification step-down type dc/direct current transducer (SR Buck DC to DC Converter), wherein include pulse-width modulation driver element 10, transistor Q1 and Q2, inductance L, and capacitor C, its driving voltage that is provided by pulse-width modulation driver element 10 comes conducting or "off" transistor Q1 and Q2, and by means of work period (Duty Cycle) change transistor Q1 and the conducting of Q2 or the length of deadline of adjusting driving voltage, DC input voitage Vin step-down is become the VD Vout of low voltage, reach the purpose of high voltage being adjusted to required low voltage.
But, in the consideration of circuit design and the use of each electronic component, all to consider the loss of energy no matter be the power supply changeover device of which kind of kind.Relate generally to the loss that transistor causes, mainly contain switching loss (switching loss) and conduction loss (conduction loss) two major parts, and along with the weight of power supply changeover device load (load), the shared ratio of switching loss and conduction loss also can be different.
Please refer to Fig. 2, for transistor from during conducting (turn on just), the voltage at transistor two ends and the variation schematic diagram by transistorized electric current, what waveform 21 was represented at this moment is the voltage at transistor source (source) and drain electrode (drain) two ends, and what waveform 22 was represented is by transistorized electric current.Transistor is from by the end of conducting, because under actual conditions, have parasitic capacitance, therefore can't be very desirable in a flash electric current is circulated fully and voltage is being dropped to zero, always have one period transitional period (part on waveform 21 and 22 slopes among Fig. 2 just), this section transitional period will be caused so-called switching loss.The areas that overlap under waveform 21 and the waveform 22 have promptly been represented the size of switching loss.And at transistor from being conducting to during (turn off just), its principle is also identical.
In simple terms, power supply changeover device is in the following time of situation of underloading (light load), and the transistorized electric current of flowing through is little.Conduction loss and the electric current of flowing through square and conducting resistance (Ron) be directly proportional, therefore also less, be not the main cause that influences efficient.Consider that emphasis is the value of switching loss this moment.Comparatively speaking, power supply changeover device is in the following time of situation of heavy duty (heavy load), and the transistorized electric current of flowing through increases, so the conduction loss increase, influences the lifting of efficient.At this moment, transistorized switching loss is just much smaller comparatively speaking, just is conduction loss so the emphasis of considering is gone up in design.
Please refer to Fig. 3 A, it is the graph of relation of driving voltage Vgs and transistor conduct resistance (Ron), and Fig. 3 B, and it is the graph of relation of driving voltage Vgs and transistor gate charge Q g.When transistor operates under the driving voltage Vgs condition with higher, transistorized conducting resistance can be lower, but gate charge Qg (gate charge) increases many.Because the transistor conduction loss is directly proportional with conducting resistance, so under the situation of high driving voltage Vgs, transistor has less conduction loss, but this moment, gate charge Qg was big, just representing the transitional period of transistor state exchange (turn on or turn off) can drag longly more, so switching loss has just increased.On the contrary, when transistor operates under the less situation of driving voltage Vgs, can obtain lower gate charge Qg, but conducting resistance can raise but.
And the controller of present most of supply transistor driving voltage Vgs is adopted fixed voltage more and is driven, can't be along with the change of load the height of its driving voltage of being supplied of modulation, and then cause some the unnecessary losses of integral energy power.
Summary of the invention
In view of this, technical problem to be solved by this invention is, the mechanism that adds the modulation driving voltage at transistorized drive controlling end, weight according to the power supply changeover device load, change the height of the driving voltage that driving control unit provides, transistor can be operated under high efficiency state, its power dissipation that causes is reduced, promote the operational paradigm of power supply changeover device integral body.
In order to achieve the above object,, provide a kind of driving governor, be applied to include an at least one transistorized power conversion unit according to a scheme of the present invention.This driving governor has a driving control unit and a voltage modulation unit, wherein driving control unit is coupled to power conversion unit, be used to provide at least one drive signal, the voltage modulation unit then is coupled to power conversion unit and driving control unit, be used for drive signal is converted at least one driving voltage with driving transistors, and the voltage modulation unit still receives the one load parameter value by power conversion unit, comes the level of modulation driving voltage according to load parameter value.
Wherein the voltage modulation unit can utilize a voltage amplifier to make the level height modulation of driving voltage, or utilizes a voltage switch unit that driving voltage is changed to predetermined voltage level.What deserves to be mentioned is that the voltage modulation unit more can include an amplifying unit, be used for that received load parameter value is made integration and amplify, allow the voltage amplifier level of modulation driving voltage according to this.
According to another aspect of the present invention, provide a kind of power-switching circuit, comprise a power conversion unit, a driving governor and a parameter measurement unit, a driving control unit and a voltage modulation unit are wherein arranged in this driving governor.Power conversion unit comprises at least one transistor, as metal-oxide half field effect transistor (MOSFET), is used for the conversion of input power supply.
Wherein, driving control unit is coupled to power conversion unit, and it can be PWM controller (PWM controller), is used to provide at least one drive signal; Parameter measurement unit is coupled to power conversion unit, in order to measure a load parameter value of power conversion unit, it can be to measure the input of power conversion unit or the voltage or the current signal of output, also can be the voltage or the current signal at inductance measuring or transistor two ends, be used as load parameter value.The voltage modulation unit then is to be coupled between power conversion unit, driving control unit and the parameter measurement unit three, drive those transistors in order to produce at least one driving voltage, and, come the level height of modulation driving voltage according to the load parameter value of receiving from parameter measurement unit.
Then, according to a scheme more of the present invention, a kind of method with load modulation driving voltage is provided, be applied to the level modulation of the driving voltage of the transistor (can be MOSFET) in the power conversion unit, step includes: at first, measure the load parameter value of power conversion unit, it can be voltage or a current signal of measuring input or output, or the voltage or the current signal at inductance or transistor two ends, with as this load parameter value.Drive those transistors then just according to the level of this load parameter value modulation driving voltage, and with those driving voltages.
What deserves to be mentioned is that the modulation of the level of above-mentioned driving voltage can be to utilize a voltage amplifier, and, driving voltage is made the modulation of level height according to this load parameter value; Or utilize a voltage switch unit, and, driving voltage is switched to predetermined voltage level according to this load parameter value.
By means of the load weight of measuring power conversion unit, and carry out the voltage level adjustment or the switching of transistorized driving voltage according to the load weight, allow transistor in the power conversion unit can operate following at the lower state of loss, to promote the efficient of power conversion unit overall operation.
Above general introduction and ensuing embodiment all are in order to further specify technological means of the present invention and to reach effect, and the right embodiment that narrates and accompanying drawing only provide reference that usefulness is described, are not to be used for the present invention is limited.
Description of drawings
Fig. 1 is the circuit diagram of known step-down type dc/direct current transducer;
Fig. 2 is the voltage current waveform schematic diagram of transistor switch loss;
Fig. 3 A is the pass figure of transistorized Vgs and its conducting resistance Ron;
Fig. 3 B is the pass figure of transistorized Vgs and its gate charge Qg;
Fig. 4 is the calcspar of the present invention with a kind of embodiment of the power-switching circuit of load modulation driving voltage;
Fig. 5 is the flow chart of the present invention with a kind of embodiment of the method for load modulation driving voltage;
Fig. 6 is the circuit diagram of the present invention with a kind of embodiment of the power-switching circuit of load modulation driving voltage;
Fig. 7 is the voltage modulation schematic diagram of Fig. 6 of the present invention with a kind of embodiment of the power-switching circuit of load modulation driving voltage;
Fig. 8 is the circuit diagram of the present invention with the another kind of embodiment of the power-switching circuit of load modulation driving voltage; And
Fig. 9 is the voltage modulation schematic diagram of Fig. 8 of the present invention with a kind of embodiment of the power-switching circuit of load modulation driving voltage.
[main element description of reference numerals]
(known technology)
10 pulse-width modulation driver elements
21,22 waveforms
(the present invention)
41,41 ' power conversion unit
43,43 ' driving control unit
45,45 ' parameter measurement unit
47,47 ' voltage modulation unit
The Vin input voltage
The Vout output voltage
S501～S505 flow chart step explanation
Embodiment
The present invention is characterized in by the sensing lead size, come the height of the transistor driving voltage level of modulation power conversion unit, transistor can be operated under low-loss state, promote the operational paradigm of whole power conversion unit.
Please refer to Fig. 4, be the calcspar of the present invention with an embodiment of the power-switching circuit of load modulation driving voltage.This power-switching circuit includes a power conversion unit 41, a driving governor and a parameter measurement unit 45.And comprise a driving control unit 43 and a voltage modulation unit 47 in the driving governor.
As described above, the change of load is just being represented in the change of the load parameter value that load measuring unit 45 is measured.The load parameter value that voltage modulation unit 47 can come according to transmitting from parameter measurement unit 45 is made driving voltage modulation just.Furthermore, the drive signal that driving control unit 43 is produced is converted to a driving voltage by voltage modulation unit 47, and the level height according to this driving voltage of load parameter value modulation is understood in voltage modulation unit 47, and this driving voltage is sent to power conversion unit 41 to control its inner transistor turns or to end.
What illustrate further is, the main consumption of transistor is conduction loss (conduction loss) when heavy duty, therefore, when parameter measurement unit 45 detects the bigger load parameter value of numerical value (when that is to say that load is heavier), voltage modulation unit 47 just can go out the higher driving voltage driving transistors of voltage level by modulation, conducting resistance Ron when making the transistor running descends, and reduces conduction loss.Otherwise, when parameter measurement unit 45 detects the less load parameter value of numerical value, represent load this moment lighter, the transistor power consumption is mainly switching loss (switching loss), so just can modulation going out the lower driving voltage of voltage, voltage modulation unit 47 comes driving transistors, gate charge Qg when allowing the transistor running descends, to reduce switching loss.
In other words, the level of modulation driving voltage later and measured load parameter value are positive correlation.When load parameter value big more (load is heavy more), the driving voltage that voltage modulation unit 47 is produced is just high more; Otherwise when load parameter value more little (load is light more), the driving voltage that voltage modulation unit 47 is produced is just low more.
In addition, more can include an amplifying unit in the voltage modulation unit 47, for example operational amplifier amplifies in order to making integration from the load parameter value that parameter measurement unit 45 is received, to confirm the variable condition of load.
Please refer to Fig. 5, be the flow chart of the present invention with a kind of embodiment of the method for load modulation driving voltage.Cooperation is with reference to Fig. 4, and the method can be applicable at least one transistorized driving voltage in the modulation power conversion unit 41.The method of this modulation driving voltage comprises the following steps.At first, measure a load parameter value (S501) of power conversion unit 41.This measuring process can be to measure the input of power conversion unit 41 or the current signal of output, or flows through transistorized current signal, or even the current signal of the energy storage inductor of flowing through, and is used as load parameter value.
What the size of load parameter value reflected promptly is the weight of the load of power conversion unit 41.Measured load parameter value is big more, just represents present load heavy more.Subsequently, according to the size of this load parameter value, the level of modulation driving voltage height (S503).In preferred embodiment, during power conversion unit 41 heavy duties (heavy load) (when just load parameter value is big), transistorized driving voltage is adjusted to a higher voltage level, then be adjusted to a lower voltage level during underloading (light load), so as to alleviating the power loss of transistor operation.The level of transistorized driving voltage height can be with aforementioned load parameter value big or small linear, or between fixed levels different more than two, switch.
What deserves to be mentioned is that the mode of modulation driving voltage can be to utilize voltage amplifier to adjust according to the size of load as described above, or utilize the voltage switch unit between different fixed voltage level, to switch according to the size of load.At last, utilize corresponding transistor (S505) in the modulation driving voltage driving power converting unit 41 later again, control these transistorized ending or conducting.
Next please refer to Fig. 6, be circuit diagram with another embodiment of the power-switching circuit of load modulation driving voltage.This power-switching circuit includes a power conversion unit 41, a driving control unit 43, a parameter measurement unit 45 and a voltage modulation unit 47.The power conversion unit 41 of present embodiment is an example with a synchronous rectification step-down type dc/direct current transducer (SR BuckDC to DC Converter).This power conversion unit 41 receives the input voltage vin of direct current, by the conducting of oxide-semiconductor control transistors Q1 and Q2 or the ratio of deadline, produces the output voltage V out of direct current.
When transistor Q1 conducting and transistor Q2 by the time, input voltage vin can be to energy storage inductor L and capacitor C charging, and supplies power to load; And when transistor Q1 by and during transistor Q2 conducting, then be to supply power to load by energy storage inductor L and capacitor C.The work period (Duty Cycle) of the drive signal by driving control unit 43 modulation transistor Q1 and Q2, adjust the ON time of transistor Q1 and Q2 and the ratio of deadline, just can adjust the level height of output voltage V out, reach the effect of DC-DC power source conversion.
Consult Fig. 6 again, parameter measurement unit 45 can be arranged on the input (as resistance R Sense among the figure) of power conversion unit 41 and measure input current Iin, or is connected in parallel to the energy storage inductor L of power conversion unit 41, with the flow through inductive current IL of energy storage inductor of detecting.The parameter measurement unit 45 of present embodiment is detected input current Iin and inductive current IL simultaneously, and electric current I in that is detected and IL can be used as load parameter value to be changed with the weight of representing load.Parameter measurement unit 45 converts electric current I in and IL to a Δ V and is sent to voltage modulation unit 47.
What specify is that the level of process voltage amplifier DRV1 and the driving voltage that the DRV2 modulation is produced can be identical, also can be different.In addition, the present invention also can be only carries out modulation at one of them driving voltage of two transistor Q1 and Q2.For instance, be higher than under the situation of the required voltage level of driving transistors Q2 at the required voltage level of driving transistors Q1, can make the driving voltage of transistor Q1 remain on a high-voltage level, and only according to the driving voltage of load parameter value modulation transistor Q2 between a low voltage level and aforementioned high-voltage level.This low level can be set at the drive voltage level of power conversion unit 41 under normal load.
And what deserves to be mentioned is that adjust the level height of driving voltage except utilizing the voltage amplification unit, voltage modulation unit 47 also can utilize a voltage switch unit, according to different load parameter value driving voltage is switched to predetermined voltage level.For instance, this voltage switch unit can be adjusted into high level or low level with the voltage that is supplied to voltage amplifier DRV1 and DRV2 according to the variation of load parameter value, to produce the driving voltage of two varying levels.When load parameter value during greater than a preset value, the voltage switch unit selects the voltage of high level to be supplied to voltage amplifier DRV1 and DRV2.Otherwise, when load parameter value is lower than this preset value, then select low level voltage supply.Thus, just can be when high capacity, the driving voltage that produces high level lowers resistance R in the transistor, to reduce conduction loss; And when hanging down load, use low level driving voltage to lower transistorized gate charge Qg,, reach the purpose that reduces unnecessary power consumption to reduce switching loss.
See also Fig. 7, be the voltage modulation schematic diagram of Fig. 6 with the power-switching circuit of load modulation driving voltage.As shown in Figure 7, along with the increasing of load, input current Iin or inductive current IL are just big more.This load parameter value is amplified computing through the integration of operational amplifier OP1 and OP2, just can make voltage amplifier DRV1 and DRV2 adjust the level height of driving voltage of its output with the change in response to load.What the Vmin among the figure represented is the minimum voltage of driving transistors Q1 and Q2, just is enough to make transistor Q1 and Q2 to enter the minimum voltage of conducting state.
Next, see also Fig. 8, be circuit diagram with the another kind of embodiment of the power-switching circuit of load modulation driving voltage.This power-switching circuit includes power conversion unit 41 ', driving control unit 43 ', parameter measurement unit 45 ' and voltage modulation unit 47 ' equally.Power conversion unit 41 ' in the present embodiment is the circuit of typical flyback power converter (flybackpower converter), and its operation principles repeats no more.
Parameter measurement unit 45 ' (shown in resistance R Sense among Fig. 8) is arranged on the source ground end of the transistor Q of power conversion unit 41 ', measures the transistorized electric current I mos that flows through, and is sent to voltage modulation unit 47 ' to produce a load parameter value.What deserves to be mentioned is, no matter be the electric current (inductive current IL as shown in Figure 6) of the input end signal (input current Iin as shown in Figure 6) of measuring power conversion unit 41 ', output end signal, energy storage inductor or measure transistorized data (transistor current Imos as shown in Figure 8), its numerical value that measures is big more, just represent load heavy more, therefore each measurement point can both be used as the numerical value that it measured load parameter value and use as long as setting is proper.
Voltage modulation unit 47 ' can comprise amplifying unit (as shown in FIG. operational amplifier OP1 and OP2), load parameter value is made integration amplify, to confirm the state of load.Voltage modulation unit 47 ' also includes a voltage amplifier DRV, and it is converted to the drive signal of driving control unit 43 ' output the driving voltage of varying level according to the measured load parameter value of parameter measurement unit 45 '.In a preferred embodiment, load parameter value big more (represent load heavy more), the level of driving voltage just must be high more by modulation; Load parameter value more little (represent load light more), the level of driving voltage just must be low more by modulation, reduces the unnecessary power consumption of transistor Q whereby.
See also Fig. 9, be the voltage modulation schematic diagram of the power-switching circuit of Fig. 8.As shown in Figure 9, heavy more when load, transistor current Imos is big more.Integration through operational amplifier OP1 and OP2 amplifies computing, just can make voltage amplifier DRV adjust the level height of the driving voltage of its output according to this, reaches the purpose of demodulating voltage.Vmin among the figure is the minimum voltage of driving transistors Q, just is enough to make transistor Q to enter the minimum voltage of conducting state.
As described above, power-switching circuit of the present invention can be by means of the load weight of measuring power-switching circuit, and transistorized driving voltage in the modulation power-switching circuit reducing unnecessary power dissipation, and then can promote the operational paradigm of whole power-switching circuit.
The above is the explanation and the accompanying drawing of specific embodiments of the invention, and the present invention should be as the criterion with claim, and is any those of ordinary skills, can think easily and variation or revise all can be encompassed within the claim protection range that this case defines.
Claims (21)
1. the method with load modulation driving voltage is characterized in that, is applied to the modulation of at least one transistorized at least one driving voltage in the power conversion unit, comprising:
Measure a load parameter value; And
According to this measured load parameter value, the level of those transistorized those driving voltages of modulation.
2. the method with load modulation driving voltage as claimed in claim 1, it is characterized in that, the step of measuring this load parameter value is: measure one of them or wherein multiple combination of an output end signal, the inductance signal in this power conversion unit, those transistorized at least one transistorized signals of an input end signal, this power conversion unit of this power conversion unit, be used as this load parameter value.
3. the method with load modulation driving voltage as claimed in claim 1, it is characterized in that, the step of the level of these those driving voltages of load parameter value modulation that foundation is measured is: utilize a voltage amplifier, those driving voltages are made the modulation of level height.
4. the method with load modulation driving voltage as claimed in claim 1, it is characterized in that, step according to the level of measured these those driving voltages of load parameter value modulation is: utilize a voltage switch unit, the level of those driving voltages is switched between a high level and a low level.
5. the method with load modulation driving voltage as claimed in claim 4 is characterized in that, this low level is for driving this transistorized lowest voltage level.
6. a driving governor is characterized in that, is applied to a power conversion unit, comprises in this power conversion unit comprising at least one transistor:
One driving control unit is coupled to this power conversion unit, and at least one drive signal is provided; And
One voltage modulation unit, be coupled to this power conversion unit and this driving control unit, in order to being converted at least one driving voltage, this drive signal drives this transistor, this voltage modulation unit receives a load parameter value from this power conversion unit, and according to the level of this this driving voltage of load parameter value modulation.
7. driving governor as claimed in claim 6 is characterized in that, this driving control unit is a PWM controller.
8. driving governor as claimed in claim 6 is characterized in that, those driving voltages are made the modulation of level height according to this load parameter value in this voltage modulation unit.
9. driving governor as claimed in claim 6 is characterized in that, this voltage modulation unit comprises a voltage switch unit, and it switches to predetermined voltage level according to this load parameter value with those driving voltages.
10. driving governor as claimed in claim 6 is characterized in that, this voltage modulation unit includes an amplifying unit, amplifies this received load parameter value is made integration.
11. driving governor as claimed in claim 10 is characterized in that, this voltage modulation unit comprises a voltage amplifier, according to the signal from this amplifying unit, those driving voltages is made the modulation of level height.
12. driving governor as claimed in claim 6 is characterized in that, more comprises:
One parameter measurement unit is coupled to this power conversion unit and this voltage modulation unit, captures this load parameter value with this power conversion unit certainly, and this load parameter value is sent to this voltage modulation unit;
Wherein, this parameter measurement unit captures one of them or wherein multiple combination of an output end signal, the inductance signal in this power conversion unit, those transistorized at least one transistorized signals of an input end signal, this power conversion unit of this power conversion unit, is used as this load parameter value.
13. driving governor as claimed in claim 12 is characterized in that, this parameter measurement unit is a sensing resistor.
14. a power-switching circuit is characterized in that, comprising:
One power conversion unit is comprising at least one transistor;
One driving control unit is coupled to this power conversion unit, and at least one drive signal is provided;
One parameter measurement unit is coupled to this power conversion unit, measures a load parameter value of this power conversion unit; And
One voltage modulation unit, be coupled to this power conversion unit, this driving control unit and this parameter measurement unit, drive this transistor in order to produce at least one driving voltage, this voltage modulation unit also receives this load parameter value from this parameter measurement unit, according to the level of these those driving voltages of load parameter value modulation.
15. power-switching circuit as claimed in claim 14 is characterized in that, this driving control unit is a PWM controller.
16. power-switching circuit as claimed in claim 14 is characterized in that, this parameter measurement unit is a sensing resistor.
17. power-switching circuit as claimed in claim 14, it is characterized in that, this parameter measurement unit is measured one of them or wherein multiple combination of an inductance signal, those transistorized at least one transistorized signals of an output end signal, this power conversion unit of an input end signal, this power conversion unit of this power conversion unit, is used as this load parameter value.
18. power-switching circuit as claimed in claim 14 is characterized in that, this voltage modulation unit includes an amplifying unit, this received load parameter value is made integration amplify.
19. power-switching circuit as claimed in claim 14 is characterized in that, this voltage modulation unit comprises a voltage amplifier, and it makes those driving voltages according to this load parameter value the modulation of level height.
20. power-switching circuit as claimed in claim 14 is characterized in that, this voltage modulation unit comprises a voltage switch unit, and it switches to predetermined voltage level according to this load parameter value with those driving voltages.
21. power-switching circuit as claimed in claim 18 is characterized in that, this voltage modulation unit comprises a voltage amplifier, and it makes those driving voltages the modulation of level height according to the signal from this amplifying unit.
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| CN2010100034029A CN102122887A (en) | 2010-01-11 | 2010-01-11 | Drive controller, power conversion circuit and method for modulating drive voltage along with load |
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| CN2010100034029A CN102122887A (en) | 2010-01-11 | 2010-01-11 | Drive controller, power conversion circuit and method for modulating drive voltage along with load |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104283422A (en) * | 2013-07-12 | 2015-01-14 | 华硕电脑股份有限公司 | Boosting converting circuit and drive control module thereof |
| CN109933119A (en) * | 2019-04-26 | 2019-06-25 | 西安中颖电子有限公司 | A kind of linear voltage regulator |
-
2010
- 2010-01-11 CN CN2010100034029A patent/CN102122887A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104283422A (en) * | 2013-07-12 | 2015-01-14 | 华硕电脑股份有限公司 | Boosting converting circuit and drive control module thereof |
| CN109933119A (en) * | 2019-04-26 | 2019-06-25 | 西安中颖电子有限公司 | A kind of linear voltage regulator |
| CN109933119B (en) * | 2019-04-26 | 2021-12-03 | 西安中颖电子有限公司 | Linear voltage stabilizer |
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Application publication date: 20110713 |