CN102113188A - Photon pair source and method for its production - Google Patents
Photon pair source and method for its production Download PDFInfo
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- CN102113188A CN102113188A CN2009801299681A CN200980129968A CN102113188A CN 102113188 A CN102113188 A CN 102113188A CN 2009801299681 A CN2009801299681 A CN 2009801299681A CN 200980129968 A CN200980129968 A CN 200980129968A CN 102113188 A CN102113188 A CN 102113188A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
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- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
- Recrystallisation Techniques (AREA)
Abstract
The invention relates to a method for the production of a photon pair source, which generates entangled photon pairs, having at least one quantum dot, wherein in the method the operational behaviour of the photon pair source is determined by adjusting the fine structure splitting of the excitonic energy level of the at least one quantum dot. It is provided according to the invention for the fine structure splitting of the excitonic energy level to be adjusted by depositing the at least one quantum dot on a {111} crystal surface of a semiconductor substrate.
Description
The present invention relates to have method according to the feature of claim 1 preamble.
International Patent Application WO 2007/062625 A2 discloses a kind of method of this type.In this known method, generate the right photon of entangled photons to the source by one or more quantum dots (Quantenpunkt) being precipitated (abscheiden) in substrate, producing.Right in order to make photon can generate entangled photons to the source, set the fine structure splitting of the exciton level of one or more quantum dots (Feinstrukturaufspaltung) as far as possible for a short time.Above-mentioned publication has also been introduced, for fine structure splitting setting-100 μ eV and+scope between the 100 μ eV right generation becomes possibility so that make entangled photons.The atomicity of each quantum dot is set between 800 and 5000, just can realizes fine structure splitting according to this publication theory.
Basic task of the present invention is to provide and generates the manufacture method of the right photon of entangled photons to the source, and this method is implemented simpler than existing method, and reappearance is better.
According to the present invention, can finish this task by having according to the method for Patent right requirement 1 characteristics.The favourable design of the method according to this invention will provide in the dependent claims.
Subsequently, design { on the 111} crystal face, realizes the setting of fine structure splitting of the exciton level of quantum dot by what quantum dot is deposited in the semiconductor-based end according to the present invention.(111) orientation crystal face of substrate and the every other crystal face with the equivalence of (111) orientation crystal face are understood that { 111} crystal face.
The method according to this invention, its principal advantages are that fine structure splitting in the method is zero all the time, and approximate at least all the time is zero.The invention square tube is crossed theoretical research and has been determined this actual conditions, promptly under study for action, calculates the exciton state of quantum dot by so-called configuration interaction method (hereinafter to be referred as the CI method).Wherein, the antisymmetry product with single-particle wave function (Slater determinant) is that base growth has gone out multiparticle Hamilton operator.By so-called 8 band kp theories, consider actual three-dimensional geometry situation, by distortion of lattice and conclusive piezoelectric effect that the Stranski-Krastanow growing method causes here, can calculate the single-particle state.The CI method of deriving from quantum chemistry is very accurate, and has not only considered direct Coulomb effect and correlation effect, has also considered the item of the exchange that occurs here.Invention side comes fine structure splitting modeling (modellieren) with being placed on (111) suprabasil quantum dot by this method, and wherein, quantum dot self is assumed that it is rotational symmetric.The size of vertical aspect ratio (ratio of Gao Yukuan), quantum dot and average In content all change to some extent.From deriving about symmetric imagination, for (111) each quantum dot above the substrate that has perpendicular to triple at least symmetry axis on (111) plane, fine structure splitting must disappear.This also conforms to the digitized simulation that do invention side.In addition, invention side has also determined, because lattice symmetry, { do not have anisotropy activity, orthogonal about anisotropy (Ad) atom on the 111} plane of crystal, the activity of this Ad atom can cause the growth of the quantum dot that extends on side direction.For " perfection " { the 111} surface has the C3v symmetry of quantum dot all the time, and promptly the quantum dot that generates is according to there being the three-fold symmetry axle, and the calculating of therefore having saved fine structure splitting.Its deviation only is the character of (chance) on the statistics, and can ignore technically.
Another significant advantage of the method according to this invention is, the piezoelectric field that is produced by quantum dot tensioning (Verspannung) can not produce symmetry reduction effect to quantum dot, and therefore C3v symmetry and fine structure splitting all can be kept when having piezoelectric field to occur under the tensioning situation.
The 3rd significant advantage of the method according to this invention is based on, and the symmetry with the quantum dot C3v basis at the symmetric semiconductor-based end (unterliegend) lattice is coordinated, and correspondingly the symmetry abated effect can not occur.Since the application of 111} basal surface, and quantum-mechanical confinement potential energy (confinement potential) comprises the C3v symmetry equally at least, so that fine structure splitting must disappear, and it is right therefore to produce entangled photons.
Another significant advantage of the method according to this invention is, can produce very simply in this way be used for data encryption photon to the source, above-mentioned data encryption is based on principle of quantum mechanics.Entangled photons centering, even if two photon wide aparts will directly have influence on measurement result about another photon of each photon centering to the measurement of a photon.In order to obtain information, potential " listener-in " must be provided with special measuring appliance in transmission line, and therefore will eliminate the right degree of entanglement of photon inevitably by its measurement, equally also changes photon transmission.And on the other hand, this can arouse attention in the polarization measurement of receiving terminal, thereby can find the wiretapping behavior.
According to the preferred design of this method, the vertical aspect ratio of quantum dot can be designed between 0.05 and 0.7, particularly between 0.15 and 0.5.For example at the bearing-surface at the semiconductor-based end
On, the ratio of the height of setting quantum dot and the diameter of quantum dot is between 0.05 and 0.7.
At least one quantum dot and/or the semiconductor-based end, preferably are made up of mixed crystal, and it includes:
-In (Ga) As material, its be embedded into Ga (In, Al) among the As crystal,
-In (Ga) P material, its be embedded into Ga (In, Al) among the P crystal,
-In (Ga) As material, its be embedded into In (Ga, Al) among the P crystal, and/or
-In
xGa
1-xThe As material, wherein x is between 0.3 and 1.
On the bearing-surface at the semiconductor-based end, the diameter of quantum dot preferably is chosen between 5nm and the 50nm, particularly between 10nm and 20nm.
From perpendicular to substrate { angle of 111} face, the profile of quantum dot be triangle, hexagon or circular preferably.
In addition, the invention still further relates to have at least one quantum dot, generate the right photon of entangled photons to the source.
To this, designed according to the present invention at least one quantum dot has been deposited in { on the 111} crystal face of the semiconductor-based end.
Above-mentioned execution mode combines with the method according to this invention and embodies the associated advantages of photon according to the present invention to the source, because photon according to the present invention conforms to the advantage of the method according to this invention in fact to the advantage in source.
Photon provides in the dependent claims to the favourable design in source.
Further illustrate the present invention below in conjunction with embodiment, for example be depicted as:
The schematic energy diagram of Fig. 1,
The comparison of the statistics of the photon of the different photon sources of Fig. 2,
The comparison of Fig. 3 piezoelectric field,
Fig. 4 (001) and (111) substrate orientation,
The comparison of Fig. 5 binding energy, and
Fig. 6 photon according to the present invention is to the embodiment in source.
In order to carry out summarized introduction, Fig. 1 illustrates the exciton (X) in the quantum dot and the schematic energy diagram of biexction (XX).The fine structure splitting of exciton state (FSS) as can be seen therefrom, this fine structure splitting is by E
X1-E
X2Obtain.With two polarised directions that are perpendicular to one another of reference marker π+and π-mark.When fine structure splitting as far as possible little, for example-100 μ eV and+100 μ eV between in, can realize the emission that entangled photons is right.Here also used the cascade decay (Zerfallskaskade) of photon from biexction → exciton → 0.Between two existing exciton states, excessive energy spacing can hinder the right degree of entanglement of ballistic phonon.
In order to carry out summarized introduction, Fig. 2 has shown according to the Poisson statistics method
Launch the classical photon source of light quantum and for example can use the comparison of the photon statistics data between the single-photon source that quantum dot realizes.The probability of n photon appears in p (n) representative in a pulse; P represents the average photon number in each pulse.This result can be transferred to photon to the source, to generate paired entangled photons.
Fig. 3 has shown the comparison of the piezoelectric field (first and second grades) of quantum dot, and quantum dot is placed on (111) face (left side) and (001) face (right side).Can see the design that piezoelectric field is different, it causes when quantum dot is grown on (111) face, and fine structure splitting is zero all the time, and causes when quantum dot is grown on (001) face, and fine structure splitting is difficult to reach zero.
In order to carry out summarized introduction, Fig. 4 has shown (001) and (111) crystal orientation with 3-D view once more.
About the embodiment of photon to the source, Fig. 5 has shown the binding energy of biexction (crooked dotted line) with respect to exciton (on 0, by the line of 0meV).As can be seen, in that fine structure splitting is constant when equalling zero, by choosing of suitable quantum dot parameter, transmit energy and exciton at biexction and transmit poor between the energy, promptly the binding energy of biexction can be affected.Fig. 5 has shown the binding energy about following situation:
(a) in the quantum dot change in size, diameter changes to 20.4 situation from 10.2.Vertical depth-width ratio is 0.17.
(b) when constant volume, the situation that vertical aspect ratio changes between 0.17 to 0.5.The diameter of flat configuration for example is 17.0nm.
(c) content of the InAs in quantum dot situation about between 100% (0% GaAs) and 30% (70% GaAs), changing.The common quantum-dot structure that occurs is indicated with arrow respectively in all three groups.
For basis instructions for use separately realizes the optkmal characteristics of photon to the source, the chemical composition of quantum dot size, vertical aspect ratio and system is preferably used as parameter.Following parameter individually or is in combination used, and all is favourable:
The vertical aspect ratio of-quantum dot is between 0.05 and 0.7, particularly between 0.15 and 0.5.
Ratio between the height of-quantum dot and the diameter of quantum dot is between 0.05 and 0.7.
The diameter of-quantum dot is between 5nm and 50nm, particularly between 10nm and the 20nm.
-quantum dot has triangle, hexagon or circular profile.
-substrate and/or quantum dot are made up of mixed crystal, and it comprises:
-In (Ga) As material, its be embedded into Ga (In, Al) among the As crystal, and/or
-In (Ga) P material, its be embedded into Ga (In, Al) among the P crystal, and/or
-In (Ga) As material, its be embedded into In (Ga, Al) among the P crystal, and/or
-In
xGa
1-xThe As material, wherein x is between 0.3 and 1.
Fig. 6 has shown the embodiment of photon to the source with the visual angle of three-dimensional.Therefrom as seen, how at cavity resonator
In insert quantum dot layer.DBR mirror (DBR:Distributed Bragg Reflector=distributed Bragg reflector) DBR is positioned at upper end and lower end.Oxide-aperture 10 plays the control current path, and plays the effect of the space selection of the target directing of controlling single quantum dot thus.
In cavity resonator, insert, make the photon generated to can have the ground of sensing and effectively from photon to deviating from the source.Be similar to Vertical Launch laser, cavity resonator preferably is designed to make the energy of entangled photons and the mode of cavity resonator
Resonance.Based on the Purcell effect, the ratio of spontaneous emission can improve, and eliminating efficiency also can improve.With reference marker 20 mark Metal Contact.
Be transmission of quantum password institute ciphered data, for example by Ai Kete agreement (Eckert-Protokolls) (A.Eckert, J.Rarity, P.Tapster, M.Palma, Phys.Rev.Lett.69, S.1293 ff (1992)), this type of photon for example can constitute the part of photonic network to the source.
Claims (14)
1. a manufacturing is used to generate the method for the right photon of entangled photons to the source, described photon has at least one quantum dot to the source, and wherein, the fine structure splitting of the exciton level by setting at least one quantum dot is determined the operating characteristic of described photon to the source, it is characterized in that
{ on the 111} crystal face, realize setting by what described at least one quantum dot is deposited in the semiconductor-based end to the fine structure splitting of described exciton level.
2. the method for claim 1 is characterized in that,
Be created between 0.05 and 0.7, particularly the vertical aspect ratio of the quantum dot between 0.15 and 0.5.
3. each described method in the claim as described above is characterized in that,
On the bearing-surface at the described semiconductor-based end, the ratio between the diameter of the height of described quantum dot and described quantum dot is set between 0.05 and 0.7.
4. each described method in the claim 1 to 3 as described above is characterized in that,
Described at least one quantum dot is by the mixed crystal manufacturing, and wherein said mixed crystal comprises and is embedded into Ga (In, Al) In (Ga) the As material among the As crystal.
5. each described method in the claim 1 to 3 as described above is characterized in that,
Described at least one quantum dot is by the mixed crystal manufacturing, and wherein said mixed crystal comprises and is embedded into Ga (In, Al) In (Ga) the P material among the P crystal.
6. each described method in the claim 1 to 3 as described above is characterized in that,
Described at least one quantum dot is by the mixed crystal manufacturing, and wherein said mixed crystal comprises and is embedded into Ga (In, Al) In (Ga) the As material among the P crystal.
7. each described method in the claim 1 to 3 as described above is characterized in that,
Manufacturing is by having In
xGa
1-xDescribed at least one quantum dot that the mixed crystal of As material is formed, wherein x is between 0.3 and 1.
8. each described method in the claim as described above is characterized in that,
On the bearing-surface at the described semiconductor-based end, make diameter between 5nm and 50nm, particularly the described quantum dot between 10nm and 20nm.
9. each described method in the claim as described above is characterized in that,
Make especially from { profile seen of the angle of 111} face is triangle, hexagon or circular described quantum dot perpendicular to described substrate.
10. one kind generates the right photon of entangled photons to the source, and this photon has at least one quantum dot to the source, it is characterized in that,
Described at least one quantum dot is deposited in { on the 111} crystal face of the semiconductor-based end.
11. photon as claimed in claim 10 is characterized in that the source,
{ on the bearing-surface of 111} crystal face, the ratio between the height of described quantum dot and the diameter of described quantum dot is between 0.05 and 0.7, particularly between 0.15 and 0.5 at the described semiconductor-based end.
12. each described photon is characterized in that the source in the claim 10 to 11 as described above,
Described at least one quantum dot and/or the described semiconductor-based end, are made up of mixed crystal, and described mixed crystal comprises:
-In (Ga) As material, its be embedded into Ga (In, Al) among the As crystal, and/or
-In (Ga) P material, its be embedded into Ga (In, Al) among the P crystal, and/or
-In (Ga) As material, its be embedded into In (Ga, Al) among the P crystalline substance, and/or
-In
xGa
1-xThe As material, wherein x is between 0.3 and 1.
13. each described photon is characterized in that the source in the claim 10 to 12 as described above,
{ on the bearing-surface of 111} crystal face, the diameter of described quantum dot is between 5nm and 50nm, particularly between 10nm and 20nm at the described semiconductor-based end.
14. each described photon is characterized in that the source in the claim 10 to 13 as described above,
Described quantum dot have particularly from perpendicular to the described semiconductor-based end { angle of 111} face is triangle, hexagon or circular profile.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008036400.2 | 2008-08-01 | ||
| DE102008036400A DE102008036400B3 (en) | 2008-08-01 | 2008-08-01 | Photon pair source and process for their preparation |
| PCT/DE2009/001025 WO2010012268A2 (en) | 2008-08-01 | 2009-07-20 | Photon pair source and method for its production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102113188A true CN102113188A (en) | 2011-06-29 |
| CN102113188B CN102113188B (en) | 2013-05-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009801299681A Expired - Fee Related CN102113188B (en) | 2008-08-01 | 2009-07-20 | Photon pair source and method for its production |
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|---|---|
| US (1) | US8559479B2 (en) |
| EP (1) | EP2308143B1 (en) |
| JP (1) | JP2011530160A (en) |
| KR (1) | KR20110036946A (en) |
| CN (1) | CN102113188B (en) |
| DE (1) | DE102008036400B3 (en) |
| WO (1) | WO2010012268A2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014201712A1 (en) * | 2013-06-21 | 2014-12-24 | 深圳市华星光电技术有限公司 | Light emitting device, display panel and manufacturing method thereof |
| CN108832484A (en) * | 2018-05-08 | 2018-11-16 | 天津大学 | A method of enhancing association photon pair source performance |
| WO2019014870A1 (en) * | 2017-07-19 | 2019-01-24 | 华为技术有限公司 | Quantum computation device and method for realizing photonic quantum logic gate |
| CN110098563A (en) * | 2019-06-11 | 2019-08-06 | 中国科学院半导体研究所 | Entangled light source based on double cavity structure |
| CN114430142A (en) * | 2022-04-01 | 2022-05-03 | 中国科学技术大学 | Device for generating entangled photon pairs and method for making same |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2476926B (en) | 2009-11-06 | 2012-05-02 | Toshiba Res Europ Ltd | Tuneable quantum light source |
| GB2479162B (en) * | 2010-03-30 | 2013-05-15 | Toshiba Res Europ Ltd | A quantum logic component and a method of controlling a qubit |
| US8149888B1 (en) | 2010-09-27 | 2012-04-03 | Technische Universitat Berlin | Single photon source |
| GB2488199B (en) * | 2012-01-23 | 2013-02-06 | Toshiba Res Europ Ltd | Tuneable quantum light source |
| WO2016145523A1 (en) | 2015-03-19 | 2016-09-22 | Institut National De La Recherche Scientifique | Passive mode-locked laser system and method for generation of long pulses |
| GB2549703B (en) * | 2016-04-19 | 2019-11-06 | Toshiba Kk | An optical device and method for its fabrication |
| US11829050B2 (en) * | 2021-11-22 | 2023-11-28 | Electronics And Telecommunications Research Institute | Entangled-photon pair emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1027204C (en) * | 1992-09-19 | 1994-12-28 | 南京大学 | Method for preparing visible photoluminescent silicon quantum point |
| KR100486607B1 (en) * | 2002-09-17 | 2005-05-03 | 주식회사 하이닉스반도체 | Method for making quantum dot |
| US7998807B2 (en) * | 2003-08-22 | 2011-08-16 | The Board Of Trustees Of The University Of Illinois | Method for increasing the speed of a light emitting biopolar transistor device |
| JP2005136267A (en) | 2003-10-31 | 2005-05-26 | Fujitsu Ltd | Semiconductor quantum dot element |
| JP2006267888A (en) | 2005-03-25 | 2006-10-05 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor optical control element |
| DE102005057800B4 (en) | 2005-11-30 | 2009-02-26 | Technische Universität Berlin | Single photon source and method for its production and operation |
-
2008
- 2008-08-01 DE DE102008036400A patent/DE102008036400B3/en not_active Expired - Fee Related
-
2009
- 2009-07-20 JP JP2011520321A patent/JP2011530160A/en active Pending
- 2009-07-20 CN CN2009801299681A patent/CN102113188B/en not_active Expired - Fee Related
- 2009-07-20 KR KR1020117004630A patent/KR20110036946A/en not_active Application Discontinuation
- 2009-07-20 EP EP09775999.7A patent/EP2308143B1/en active Active
- 2009-07-20 WO PCT/DE2009/001025 patent/WO2010012268A2/en active Application Filing
- 2009-07-20 US US13/056,967 patent/US8559479B2/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014201712A1 (en) * | 2013-06-21 | 2014-12-24 | 深圳市华星光电技术有限公司 | Light emitting device, display panel and manufacturing method thereof |
| WO2019014870A1 (en) * | 2017-07-19 | 2019-01-24 | 华为技术有限公司 | Quantum computation device and method for realizing photonic quantum logic gate |
| CN108832484A (en) * | 2018-05-08 | 2018-11-16 | 天津大学 | A method of enhancing association photon pair source performance |
| CN110098563A (en) * | 2019-06-11 | 2019-08-06 | 中国科学院半导体研究所 | Entangled light source based on double cavity structure |
| CN114430142A (en) * | 2022-04-01 | 2022-05-03 | 中国科学技术大学 | Device for generating entangled photon pairs and method for making same |
| CN114430142B (en) * | 2022-04-01 | 2022-07-15 | 中国科学技术大学 | Device for generating entangled photon pairs and method for making same |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010012268A3 (en) | 2010-04-15 |
| EP2308143A2 (en) | 2011-04-13 |
| DE102008036400B3 (en) | 2010-01-21 |
| JP2011530160A (en) | 2011-12-15 |
| CN102113188B (en) | 2013-05-29 |
| EP2308143B1 (en) | 2016-10-26 |
| KR20110036946A (en) | 2011-04-12 |
| WO2010012268A2 (en) | 2010-02-04 |
| US20110142088A1 (en) | 2011-06-16 |
| US8559479B2 (en) | 2013-10-15 |
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