CN102109550A - Overvoltage and excess temperature detection circuit - Google Patents
Overvoltage and excess temperature detection circuit Download PDFInfo
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- CN102109550A CN102109550A CN2009102621602A CN200910262160A CN102109550A CN 102109550 A CN102109550 A CN 102109550A CN 2009102621602 A CN2009102621602 A CN 2009102621602A CN 200910262160 A CN200910262160 A CN 200910262160A CN 102109550 A CN102109550 A CN 102109550A
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Abstract
The invention discloses an overvoltage and excess temperature detection circuit, which aims to monitor temperature and first voltage. The overvoltage and excess temperature detection circuit comprises a voltage limitation circuit, a temperature sensing circuit, a current source circuit, and a first comparison circuit and a second comparison circuit; the voltage limitation circuit is connected between an end point of the first voltage and a detection end to limit and control the magnitude of the electric energy of the first voltage sent to the detection end; the temperature sensing circuit is connected between the detection end and a common terminal and equivalent resistance of the temperature sensing circuit changes along with the temperature; the current source circuit is connected to the detection end to provide first current for the detection end so as to generate detection voltage; the first comparison circuit and the second comparison circuit compare the voltage value of the detection voltage, a first reference voltage value and a second reference voltage value respectively; when the temperature is greater than a temperature upper limit, the temperature state signal is in an enabling state; and when the voltage value of the first voltage is greater than the voltage upper limit, the voltage state signal is in an enabling state. The circuit is relatively simple, the complexity, cost and volume of the whole circuit can be reduced and the requirement of the current small-sized electronic products is met.
Description
Technical field
The present invention relates to a kind of testing circuit, relate in particular to a kind of superpotential and excess temperature testing circuit.
Background technology
In recent years along with the progress of science and technology, electronic product with difference in functionality of all kinds is developed out gradually, these electronic products with difference in functionality of all kinds have not only satisfied people's various different demands, more incorporate everyone daily life, and it is more convenient to make people live.
The electronic product of these difference in functionalitys of all kinds is made up of various electronic component, each electronic component need could normally move under suitable voltage and temperature, therefore, magnitude of voltage and heating radiator that the designer is can be according to the characteristics design of each electronic component suitable can normally move electronic product.Yet, the running temperature of electronic component can rise and corresponding the rising along with environment temperature, the voltage that electric power system provides can rise suddenly because of thunderbolt or other device starts running influence, these situations all might cause electronic component to move under too high voltage or temperature regime, cause the undesired even damage of electronic component operation.
In order to prevent because of too high voltage or temperature, make electronic component irregular operating or damage, need utilize overvoltage detection circuit (over voltage protection circuit respectively, OVP circuit) with excess temperature testing circuit (over temperature protection circuit, OTP circuit) at-once monitor electronic component voltage and temperature, when temperature or overtension, just can stop the electronic product operation immediately.
Because traditional overvoltage detection circuit and excess temperature testing circuit are respectively independent and complicated circuit, electronic product need be provided with circuit complicated traditional overvoltage detection circuit and excess temperature testing circuit respectively, not only can increase the complexity of integrated circuit, more can make cost and volume increase, can't meet the requirement of small-sized electronic product now.
Therefore, how to develop a kind of superpotential and excess temperature testing circuit that improves above-mentioned known technology defective, real problem for the correlative technology field solution that presses at present.
Summary of the invention
The object of the present invention is to provide a kind of superpotential and excess temperature testing circuit, whether surpass higher limit respectively in order to monitor electronic component temperature and voltage simultaneously, non-difference is overvoltage detection circuit and excess temperature testing circuit independently, its circuit is comparatively simple, not only can reduce the complexity of integrated circuit, more can make cost and volume reduce, meet the requirement of small-sized electronic product now.
For reaching above-mentioned purpose, of the present invention one than the broad sense embodiment for a kind of superpotential and excess temperature testing circuit are provided, whether surpass temperature upper limit and upper voltage limit value respectively with the monitor temperature and first voltage, superpotential and excess temperature testing circuit comprise: voltage limiting circuit, be connected between the end points and test side of first voltage, be sent to the electric energy size of test side with the electric energy that limits and control first voltage via voltage limiting circuit; Temperature sensing circuit is connected in the test side and connects between the end together, and the equivalent resistance of temperature sensing circuit changes along with temperature; Current source circuit is connected in the test side, to provide first electric current to the test side, the test side is produced detect voltage; First comparator circuit is connected in the test side and receives first reference voltage level, with the magnitude of voltage and first reference voltage level that relatively detects voltage, and the corresponding state of temperature signal that produces; And second comparator circuit, be connected in the test side and receive second reference voltage level, with the magnitude of voltage and second reference voltage level that relatively detects voltage, and the corresponding voltage state signal that produces; Wherein, when temperature during greater than temperature upper limit, the state of temperature signal is an enabled state, and when the magnitude of voltage of first voltage during greater than the upper voltage limit value, voltage state signal is an enabled state.
Superpotential of the present invention and excess temperature testing circuit can monitor the electronic component temperature simultaneously and whether voltage surpasses higher limit respectively, it is different from traditional circuit, non-difference is overvoltage detection circuit and excess temperature testing circuit independently, circuit is comparatively simple, not only can reduce the complexity of integrated circuit, more make cost and volume reduce, meet the requirement of small-sized electronic product now.
Description of drawings
Fig. 1: be the superpotential of preferred embodiment of the present invention and the circuit diagram of excess temperature testing circuit.
Fig. 2: be the corresponding relation synoptic diagram of the detection voltage of the superpotential of preferred embodiment of the present invention and excess temperature testing circuit.
Fig. 3: be the superpotential of another preferred embodiment of the present invention and the circuit diagram of excess temperature testing circuit.
Fig. 4 A: for another of the superpotential of preferred embodiment of the present invention and excess temperature testing circuit detects the corresponding relation synoptic diagram of voltage.
Fig. 4 B: for another of the superpotential of preferred embodiment of the present invention and excess temperature testing circuit detects the corresponding relation synoptic diagram of voltage.
Fig. 5: be the superpotential of another preferred embodiment of the present invention and the circuit diagram of excess temperature testing circuit.
Fig. 6: be the superpotential of another preferred embodiment of the present invention and the circuit diagram of excess temperature testing circuit.
Description of reference numerals in the above-mentioned accompanying drawing is as follows:
1: superpotential and excess temperature testing circuit 11: voltage limiting circuit
12: temperature sensing circuit 13: current source circuit
15: the second comparator circuits of 14: the first comparator circuits
The circuit that goes to bounce removed the circuit that bounces at 151: the second in 141: the first
OP1: the first operational amplifier OP2: second operational amplifier
R
T: the first negative temperature coefficient resister R
G: second negative temperature coefficient resister
Q
1: the first switch COM: connect end altogether
D
z: Zener diode K
a: the test side
V
Cc: the first voltage V
DD: second voltage
V
z: deboost value V
a: detect voltage
V
Ref1: the first reference voltage level V
Ref2: second reference voltage level
V
A1: first detects magnitude of voltage V
A2: second detects magnitude of voltage
V
X1: the first voltage setting value V
X2: second voltage setting value
S
OTP: state of temperature signal S
OVP: voltage state signal
I
1: first electric current I
2: second electric current
A1～A3: the first～three district T
1～T
3: first～the 3rd temperature value
T: temperature
Embodiment
Some exemplary embodiments that embody feature of the present invention and advantage will be described in detail in the explanation of back segment.Be understood that the present invention can have various variations on different modes, it does not depart from the scope of the present invention, and explanation wherein and the accompanying drawing usefulness that ought explain in itself, but not in order to restriction the present invention.
See also Fig. 1, it is the circuit diagram of the superpotential of preferred embodiment of the present invention and excess temperature testing circuit.As shown in Figure 1, superpotential and excess temperature testing circuit 1 are in order to the while monitor temperature and the first voltage V
CcWhether surpass temperature upper limit and upper voltage limit value respectively, this superpotential and excess temperature testing circuit 1 comprise voltage limiting circuit 11, temperature sensing circuit 12, current source circuit 13, first comparator circuit 14, second comparator circuit 15.In the present embodiment, voltage limiting circuit 11 can be but not be limited to Zener diode D
z(Zener diode) is connected in the first voltage V
CcEnd points (not shown) and test side K
aBetween, and have deboost value V
z, in order to limit and to control the first voltage V
CcElectric energy be sent to test side K via voltage limiting circuit 11
aThe electric energy size.
In the present embodiment, temperature sensing circuit 12 can be but not be limited to the first negative temperature coefficient resister R
T(negative temperature coefficient thermister, NTC Thermister) is connected in test side K
aConnect together between the end COM, so the equivalent resistance of temperature sensing circuit 12 can change along with temperature.Current source circuit 13 is connected in test side K
a, in order to receive the second voltage V
DDElectric energy and produce first electric current I 1 to test side K
a, make test side K
aProduce and detect voltage V
a
In the present embodiment, first comparator circuit 14 and second comparator circuit 15 can be respectively but not be limited to first operational amplifier OP1 (the Operational amplifier, OP) with the second operational amplifier OP2, the positive input terminal of the first operational amplifier OP1 receives the first reference voltage level V
Ref1, negative input end is connected in test side K
a, in order to relatively to detect voltage V
aThe magnitude of voltage and the first reference voltage level V
Ref1, and the corresponding state of temperature signal S that produces
OTPThe negative input end of the second operational amplifier OP2 receives the second reference voltage level V
Ref2, positive input terminal is connected in test side K
a, in order to relatively to detect voltage V
aThe magnitude of voltage and the second reference voltage level V
Ref2, and the corresponding voltage state signal S that produces
OVP
When temperature T rose, the resistance value of the first negative temperature coefficient resister RT can correspondingly descend, so the equivalent resistance of temperature sensing circuit 12 also can decrease, correspondence makes and detects voltage V
aMagnitude of voltage reduce.On the contrary, when temperature T descends, the first negative temperature coefficient resister R
TResistance value can corresponding rise, so the equivalent resistance of temperature sensing circuit 12 also can rise thereupon, correspondence makes and detects voltage V
aMagnitude of voltage rise.
As for, 11 of voltage limiting circuits are to utilize deboost value V
z, limit and control the first voltage V
CcElectric energy whether be sent to test side K via voltage limiting circuit 11
a, detect voltage V and change
aMagnitude of voltage with flow into temperature sensing circuit 1
2Second electric current I
2Size.As the first voltage V
CcMagnitude of voltage rise and greater than deboost value V
zThe time, the first voltage V
CcElectric energy can be sent to test side K via Zener diode Dz
a, make second electric current I
2Current value with detect voltage V
aMagnitude of voltage rise, at this moment, detect voltage V
aWith the first voltage V
CcBetween voltage difference be restriction magnitude of voltage V
zOn the contrary, as the first voltage V
CcMagnitude of voltage descend and less than deboost value V
zThe time, Zener diode D
zCan stop the first voltage V
CcElectric energy pass through, make the first voltage V
CcElectric energy can't pass through Zener diode D
zTo test side K
a, this moment second electric current I
2Can equal first electric current I
1
See also Fig. 2 and cooperate Fig. 1, Fig. 2 is the corresponding relation synoptic diagram of the detection voltage of the superpotential of preferred embodiment of the present invention and excess temperature testing circuit.As shown in Figure 2, according to the first reference voltage level V
Ref1With the second reference voltage level V
Ref2To detect voltage V
aDivide into the first district A1, the second district A2 and the 3rd district A3 in different magnitude of voltage correspondences.The first district A1 and the 3rd district A3 represent the first voltage V respectively
CcMagnitude of voltage surpass the upper voltage limit value and surpass temperature upper limit with temperature T, the second district A2 then representation temperature T above the temperature upper limit and the first voltage V
CcMagnitude of voltage surpass the normal condition of upper voltage limit value.
When surpassing temperature upper limit, detect voltage V when the temperature T rising
aMagnitude of voltage can correspondence be lower than the first reference voltage level V
Ref1, change at the 3rd district A3, judge state of temperature signal S via the first operational amplifier OP1
OTPChange into the enabled state (Enable) of noble potential.On the contrary, when surpassing temperature upper limit, detect voltage V when the temperature T reduction
aMagnitude of voltage can correspondence be higher than the first reference voltage level V
Ref1, do not change at the 3rd district A3, judge state of temperature signal S via the first operational amplifier OP1
OTPChange into the disabled state (disable) of electronegative potential.
As the first voltage V
CcMagnitude of voltage rise and when surpassing the upper voltage limit value, detect voltage V
aMagnitude of voltage can correspondence be higher than the second reference voltage level V
Ref2, change at the first district A1, judge the enabled state of voltage state signal SOVP being changed into noble potential via the second operational amplifier OP2.On the contrary, as the first voltage V
CcMagnitude of voltage reduce and when surpassing the upper voltage limit value, detect voltage V
aMagnitude of voltage can correspondence be lower than the second reference voltage level V
Ref2, do not change at the first district A1, judge voltage state signal S via the second operational amplifier OP2
OVPChange into the disabled state of electronegative potential.
See also Fig. 3 and cooperate Fig. 1, Fig. 3 is the superpotential of another preferred embodiment of the present invention and the circuit diagram of excess temperature testing circuit.Fig. 3 and Fig. 1 difference are that first comparator circuit 14 of Fig. 3 and second comparator circuit 15 also comprise first circuit 141 (debounce) and second circuit 151 that goes to bounce that goes to bounce respectively, in order to prevent causing state of temperature signal S because of noise
OTPOr voltage state signal S
OVPCorrespond to wrong state.Wherein, first circuit 141 that goes to bounce is connected in the output of the first operational amplifier OP1, and second circuit 151 that goes to bounce is connected in the output of the second operational amplifier OP2.As for, the operation logic of the superpotential of Fig. 3 and excess temperature testing circuit 1 is same as Fig. 1, does not repeat them here.
See also Fig. 4 A and cooperate Fig. 1, Fig. 4 A is the superpotential of preferred embodiment of the present invention corresponding relation synoptic diagram with another detection voltage of excess temperature testing circuit.Shown in Fig. 4 A,, make and detect voltage V when temperature T is that the equivalent resistance of temperature sensing circuit 12 can reduce when surpassing the 3rd temperature value T3 of temperature upper limit
aMagnitude of voltage correspond to and be lower than the first reference voltage level V
Ref1First detect magnitude of voltage V
A1, state of temperature signal S
OTPCan correspond to enabled state.When temperature T by the 3rd temperature value T
3Decline to a great extent to being lower than the first temperature value T of excess temperature lower limit
1The time, the equivalent resistance of temperature sensing circuit 12 can correspondingly rise, and makes to detect voltage V
aMagnitude of voltage for being higher than the first reference voltage level V
Ref1With the second reference voltage level V
Ref2Second detect magnitude of voltage V
A2, and state of temperature signal S
OTPCan corresponding change into disabled state by enabled state.Yet, though this moment the first voltage V
CcMagnitude of voltage whether surpass the upper voltage limit value, be higher than the second reference voltage level V
Ref2Second detect magnitude of voltage V
A2But can make voltage state signal S
OVPChange into enabled state.
For preventing that the problems referred to above from producing, except selecting the first suitable negative temperature coefficient resister R for use
TOutward, also can be with the second voltage V
DDMagnitude of voltage be set at less than the second reference voltage level V
Ref2The first voltage setting value V
X1See also Fig. 4 A and cooperate Fig. 4 B and Fig. 1, Fig. 4 B is the superpotential of preferred embodiment of the present invention corresponding relation synoptic diagram with another detection voltage of excess temperature testing circuit.Shown in Fig. 4 B, with the second voltage V
DDMagnitude of voltage be set at less than the second reference voltage level V
Ref2The first voltage setting value V
X1After, at the first voltage V
CcMagnitude of voltage surpass under the situation of upper voltage limit value, when temperature T declines to a great extent and surpasses temperature upper limit and less than the second temperature value T
2The time, though the equivalent resistance of temperature sensing circuit 12 can continue to rise, detect voltage V
aMagnitude of voltage but can not rise again thereupon, but maintain the first voltage setting value V
X1Below.Because, the first voltage setting value V
X1Less than the second reference voltage level V
Ref2, therefore can not cause voltage state signal S
OVPChange into the mistake of enabled state.
In certain embodiments, superpotential of the present invention and excess temperature testing circuit 1 are selected the first suitable negative temperature coefficient resister R for use
T, and the first voltage V
CcWith the second voltage V
DDLoad voltage value be designed to equate, can be so that superpotential of the present invention and 1 true(-)running of excess temperature testing circuit.In addition in certain embodiments, the current source circuit 13 of superpotential and excess temperature testing circuit 1 can be selected constant current type for use, first electric current I
1Current value be fixed value, prevent according to said method that Yin WenduT from continuing to decline to a great extent again and cause voltage state signal S
OVPChange into the mistake of enabled state.In certain embodiments, current source circuit 13 is the variable current formula, first electric current I
1Current value be the on-fixed value, but according to the second reference voltage level V
Ref2And change, therefore, at the first voltage V
CcMagnitude of voltage surpass under the situation of upper voltage limit value, even temperature T continues to decline to a great extent, current source circuit 13 can be with test side K
aMagnitude of voltage be limited in the second reference voltage level V
Ref2Below, can not cause voltage state signal S
OVPChange into the mistake of enabled state.In addition in certain embodiments, current source circuit 13 is the variable current formula, first electric current I
1Also on-fixed value of current value, but first electric current I
1Current value be to change along with temperature T, therefore, at the first voltage V
CcMagnitude of voltage surpass under the situation of upper voltage limit value, even temperature T continues to decline to a great extent, current source circuit 13 equally can be with the magnitude of voltage system limit of test side Ka at the second reference voltage level V
Ref2Below, can not cause voltage state signal S
OVPChange into the mistake of enabled state.
See also Fig. 5 and cooperate Fig. 1, Fig. 5 is the superpotential of another preferred embodiment of the present invention and the circuit diagram of excess temperature testing circuit.Fig. 5 and Fig. 1 difference are that the superpotential of Fig. 5 and excess temperature testing circuit 1 also comprise the first switch Q
1, be connected in test side K
aAnd between the output of current source circuit 13.Because the first switch Q
1Control end receive less than the second reference voltage level V
Ref2The second voltage setting value V
X2, so the first switch Q
1The control end and the first switch Q
1The test side K that connects
aBetween cannot be less than the first switch Q
1Minimum turn-on voltage V
Th, correspondence makes test side K
aDetection voltage V
aMagnitude of voltage less than the second reference voltage level V
Ref2Hence one can see that, utilizes this mode can prevent equally that Yin WenduT from continuing to decline to a great extent and cause voltage state signal S
OVPChange into the mistake of enabled state.In certain embodiments, the second voltage setting value V of Fig. 5
X2Non-being set at less than the second reference voltage level V
Ref2, but be set at less than the second reference voltage level V
Ref2Subtract the first switch Q
1Minimum turn-on voltage V
Th, its relational expression is
V
x2＜V
ref2-V
th……(1)。
Under this sets, detect voltage V
aMagnitude of voltage equally can be less than the second reference voltage level V
Ref2, cause voltage state signal S and prevent that Yin WenduT from continuing to decline to a great extent
OVPChange into the mistake of enabled state.As for, the operation logic of the superpotential of Fig. 5 and excess temperature testing circuit 1 is same as Fig. 1, does not repeat them here.
See also Fig. 6 and cooperate Fig. 1, Fig. 6 is the superpotential of another preferred embodiment of the present invention and the circuit diagram of excess temperature testing circuit.Fig. 6 and Fig. 1 difference are that the temperature sensing circuit 12 of Fig. 6 is except comprising the first negative temperature coefficient resister R
TAlso comprise the second negative temperature coefficient resister R outward
G, with the first negative temperature coefficient resister R
TBe connected in series, therefore, the equivalent resistance of temperature sensing circuit 12 is the first negative temperature coefficient resister R
TWith the second negative temperature coefficient resister R
GThe resistance value addition.Because, the first negative temperature coefficient resister R
TWith the second negative temperature coefficient resister R
GTemperature coefficient differing from each other, so can improve one first negative temperature coefficient resister R
TThe time, excessive because of its temperature coefficient, temperature T continues decline can cause voltage state signal S
OVPChange into the mistake of enabled state.For example, the first bigger negative temperature coefficient resister R of temperature coefficient
TResistance value when 25 degree are spent with 125 is respectively 12k ohm, and (Ω Ohm) with 470k ohm, differs 40 times between the two, utilizes the second less negative temperature coefficient resister R of temperature coefficient
GWith the first negative temperature coefficient resister R
TBe connected in series, can make the resistance value of equivalent resistance when 25 degree are spent with 125 of temperature sensing circuit 12 be respectively 212k ohm and 636k ohm, only differ 3 times between the two.As for, the operation logic of the superpotential of Fig. 6 and excess temperature testing circuit 1 is same as Fig. 1, does not repeat them here.
In certain embodiments, temperature sensing circuit 12 can also only comprise single the temperature variant first negative temperature coefficient resister R
TAnd at least one not temperature variant resistance, constitute temperature sensing circuit 12 again by being connected to each other, no matter annexation is why, the equivalent resistance of this temperature sensing circuit 12 also can change along with temperature.The first above-mentioned switch Q
1Can be but be not defined as bipolar junction transistor (Bipolar Junction Transistor, BJT) or field effect transistor (Field-Effect Transistor, FET).
In sum, superpotential of the present invention and excess temperature testing circuit can monitor the electronic component temperature simultaneously and whether voltage surpasses higher limit respectively, it is different from traditional circuit, non-difference is overvoltage detection circuit and excess temperature testing circuit independently, circuit is comparatively simple, not only can reduce the complexity of integrated circuit, more make cost and volume reduce, meet the requirement of small-sized electronic product now.
The present invention must be appointed by those of ordinary skills and executes that the craftsman thinks and be to modify as all, does not take off the scope as the desire protection of attached claim institute.
Claims (25)
1. whether superpotential and excess temperature testing circuit surpass a temperature upper limit and a upper voltage limit value respectively to monitor a temperature and one first voltage, and this superpotential and excess temperature testing circuit comprise:
One voltage limiting circuit is connected between the end points and a test side of this first voltage, is sent to the electric energy size of this test side via this voltage limiting circuit with the electric energy that limits and control this first voltage;
One temperature sensing circuit is connected in this test side and connects between the end altogether, and the equivalent resistance of this temperature sensing circuit changes along with temperature;
One current source circuit is connected in this test side, to provide one first electric current to this test side, makes this test side produce one and detects voltage;
One first comparator circuit is connected in this test side and receives one first reference voltage level, so that relatively this detects magnitude of voltage and this first reference voltage level of voltage, and the corresponding state of temperature signal that produces; And
One second comparator circuit is connected in this test side and receives one second reference voltage level, so that relatively this detects magnitude of voltage and this second reference voltage level of voltage, and the corresponding voltage state signal that produces;
Wherein, when this temperature during greater than this temperature upper limit, this state of temperature signal is an enabled state, and when the magnitude of voltage of this first voltage during greater than this upper voltage limit value, this voltage state signal is an enabled state.
2. superpotential as claimed in claim 1 and excess temperature testing circuit, wherein this voltage limiting circuit has a deboost value, when the magnitude of voltage of this first voltage during less than this deboost value, the electric energy that this voltage limiting circuit stops this first voltage passes through, and makes the electric energy of this first voltage can't pass through this voltage limiting circuit to this test side.
3. superpotential as claimed in claim 2 and excess temperature testing circuit, when the magnitude of voltage of this first voltage rises and during greater than this deboost value, the electric energy of this first voltage can be sent to this test side via this voltage limiting circuit, and the current value of one second electric current that flows into this temperature sensing circuit and the magnitude of voltage of this detection voltage are risen.
4. superpotential as claimed in claim 2 and excess temperature testing circuit, when the magnitude of voltage of this first voltage descends and during less than this deboost value, the electric energy that this voltage limiting circuit can stop this first voltage passes through, make the electric energy of this first voltage can't pass through this voltage limiting circuit to this test side, wherein this second electric current equals this first electric current.
5. superpotential as claimed in claim 1 and excess temperature testing circuit, wherein this voltage limiting circuit is a Zener diode, be connected between the end points and this test side of this first voltage, be sent to the electric energy size of this test side with the electric energy that limits and control this first voltage via this voltage limiting circuit.
6. superpotential as claimed in claim 1 and excess temperature testing circuit, when this temperature rose, the equivalent resistance of this temperature sensing circuit is corresponding to descend, and correspondence reduces the magnitude of voltage of this detection voltage.
7. superpotential as claimed in claim 6 and excess temperature testing circuit, when this temperature descended, the equivalent resistance of this temperature sensing circuit is corresponding to rise, and correspondence rises the magnitude of voltage of this detection voltage.
8. superpotential as claimed in claim 6 and excess temperature testing circuit, wherein this temperature sensing circuit is for comprising one first negative temperature coefficient resister, is connected in this test side and this connects between the end altogether.
9. superpotential as claimed in claim 8 and excess temperature testing circuit, wherein this temperature sensing circuit also comprises one second negative temperature coefficient resister, is connected in series with this first negative temperature coefficient resister.
10. superpotential as claimed in claim 1 and excess temperature testing circuit, wherein this temperature sensing circuit comprises the resistance that a temperature variant resistance and at least one do not change with negative temperature, is connected to each other to constitute this temperature sensing circuit.
11. superpotential as claimed in claim 1 and excess temperature testing circuit, wherein this first comparator circuit comprises one first operational amplifier, the positive input terminal of this first operational amplifier receives this first reference voltage level, the negative input end of this first operational amplifier is connected in this test side, so that relatively this detects magnitude of voltage and this first reference voltage level of voltage, and corresponding this state of temperature signal that produces.
12. superpotential as claimed in claim 11 and excess temperature testing circuit, when surpassing this temperature upper limit when this temperature rising, the magnitude of voltage of this detection voltage can be lower than this first reference voltage level, judges with this state of temperature signal change to be enabled state via this first operational amplifier.
13. superpotential as claimed in claim 11 and excess temperature testing circuit, when surpassing this temperature upper limit when this temperature reduction, the magnitude of voltage of this detection voltage can be higher than this first reference voltage level, judges with this state of temperature signal change to be disabled state via this first operational amplifier.
14. superpotential as claimed in claim 11 and excess temperature testing circuit, wherein this first comparator circuit also comprises one first and removes the circuit that bounces, be connected in the output of this first operational amplifier, to prevent corresponding to wrong state because of noise causes this state of temperature signal.
15. superpotential as claimed in claim 1 and excess temperature testing circuit, wherein this second comparator circuit comprises one second operational amplifier, the negative input end of this second operational amplifier receives this second reference voltage level, the positive input terminal of this second operational amplifier is connected in this test side, so that relatively this detects magnitude of voltage and this second reference voltage level of voltage, and corresponding this voltage state signal that produces.
16. superpotential as claimed in claim 15 and excess temperature testing circuit, when the magnitude of voltage of this first voltage rises and when surpassing this upper voltage limit value, the magnitude of voltage of this detection voltage can be higher than this second reference voltage level, judges via this second operational amplifier this voltage state signal is changed into enabled state.
17. superpotential as claimed in claim 16 and excess temperature testing circuit, when the magnitude of voltage of this first voltage reduces and when surpassing this upper voltage limit value, the magnitude of voltage of this detection voltage can be lower than this second reference voltage level, judges via this second operational amplifier this voltage state signal is changed into disabled state.
Remove the circuit that bounces 18. superpotential as claimed in claim 15 and excess temperature testing circuit, this second comparator circuit also comprise one second, be connected in the output of this second operational amplifier, to prevent corresponding to wrong state because of noise causes this voltage state signal.
19. superpotential as claimed in claim 1 and excess temperature testing circuit, wherein this current source circuit is for to decide electric current, and receive the electric energy of one second voltage and this first electric current of producing the fixed current value to this test side.
20. superpotential as claimed in claim 19 and excess temperature testing circuit, wherein the magnitude of voltage of this second voltage is set at less than this second reference voltage level.
21. superpotential as claimed in claim 1 and excess temperature testing circuit also comprise one first switch, are connected between the output of this test side and this current source circuit, the control end of this first switch receives one second voltage setting value.
22. superpotential as claimed in claim 21 and excess temperature testing circuit, wherein this second voltage setting value is set at a minimum turn-on voltage that subtracts this first switch less than this second reference voltage level.
23. superpotential as claimed in claim 21 and excess temperature testing circuit, wherein this first switch is bipolar junction transistor or field effect transistor.
24. superpotential as claimed in claim 1 and excess temperature testing circuit, wherein this current source circuit is the variable current formula, the current value of this first electric current changes according to this second reference voltage level, magnitude of voltage at this first voltage surpasses under the situation of this upper voltage limit value, and the magnitude of voltage system of this test side is limit at this below second reference voltage level.
25. superpotential as claimed in claim 1 and excess temperature testing circuit, wherein this current source circuit is the variable current formula, the current value of this first electric current is along with this temperature variation, magnitude of voltage at this first voltage surpasses under the situation of this upper voltage limit value, and the magnitude of voltage system of this test side is limit at this below second reference voltage level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910262160 CN102109550B (en) | 2009-12-25 | 2009-12-25 | Overvoltage and excess temperature detection circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910262160 CN102109550B (en) | 2009-12-25 | 2009-12-25 | Overvoltage and excess temperature detection circuit |
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|---|---|
| CN102109550A true CN102109550A (en) | 2011-06-29 |
| CN102109550B CN102109550B (en) | 2013-04-17 |
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|---|---|---|---|
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105738002A (en) * | 2014-12-24 | 2016-07-06 | 精工半导体有限公司 | Overheat detection circuit and semiconductor device |
| CN107979362A (en) * | 2016-10-25 | 2018-05-01 | 中惠创智（深圳）无线供电技术有限公司 | A kind of circuit system and power device Drive Protecting Circuit |
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| CN108369142A (en) * | 2015-09-16 | 2018-08-03 | 高通股份有限公司 | Temperature of transistor senses |
| CN108700475A (en) * | 2016-02-29 | 2018-10-23 | 三洋电机株式会社 | Temperature sensing circuit |
| CN109932630A (en) * | 2017-12-15 | 2019-06-25 | 朋程科技股份有限公司 | Excess temperature detection circuit and its test method |
| WO2020077893A1 (en) * | 2018-10-17 | 2020-04-23 | 深圳市华星光电半导体显示技术有限公司 | Display device and temperature sensing and regulation control module thereof |
| CN111431146A (en) * | 2020-05-09 | 2020-07-17 | 无锡雷利电子控制技术有限公司 | Motor overvoltage and overheating protection system and motor and dish washing machine applying same |
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Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4698655A (en) * | 1983-09-23 | 1987-10-06 | Motorola, Inc. | Overvoltage and overtemperature protection circuit |
| CN100442620C (en) * | 2005-02-03 | 2008-12-10 | 昂宝电子（上海）有限公司 | Multi-threshold over-curreut protection system and method for switch powersupply converter |
| CN101212134B (en) * | 2006-12-28 | 2011-05-04 | 华润矽威科技（上海）有限公司 | Over-voltage protection circuit for boosting-type switching power supply |
-
2009
- 2009-12-25 CN CN 200910262160 patent/CN102109550B/en active Active
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| CN105738002A (en) * | 2014-12-24 | 2016-07-06 | 精工半导体有限公司 | Overheat detection circuit and semiconductor device |
| CN105738002B (en) * | 2014-12-24 | 2020-03-03 | 艾普凌科有限公司 | Overheat detection circuit and semiconductor device |
| CN108369142A (en) * | 2015-09-16 | 2018-08-03 | 高通股份有限公司 | Temperature of transistor senses |
| CN108700475A (en) * | 2016-02-29 | 2018-10-23 | 三洋电机株式会社 | Temperature sensing circuit |
| CN107979061A (en) * | 2016-10-25 | 2018-05-01 | 中惠创智（深圳）无线供电技术有限公司 | One kind protection circuit and circuit system |
| CN107979362A (en) * | 2016-10-25 | 2018-05-01 | 中惠创智（深圳）无线供电技术有限公司 | A kind of circuit system and power device Drive Protecting Circuit |
| CN107979362B (en) * | 2016-10-25 | 2021-08-24 | 中惠创智（深圳）无线供电技术有限公司 | Circuit system and power device driving protection circuit |
| CN109932630A (en) * | 2017-12-15 | 2019-06-25 | 朋程科技股份有限公司 | Excess temperature detection circuit and its test method |
| CN109932630B (en) * | 2017-12-15 | 2021-08-03 | 朋程科技股份有限公司 | Over-temperature detection circuit and testing method thereof |
| WO2020077893A1 (en) * | 2018-10-17 | 2020-04-23 | 深圳市华星光电半导体显示技术有限公司 | Display device and temperature sensing and regulation control module thereof |
| CN111431146A (en) * | 2020-05-09 | 2020-07-17 | 无锡雷利电子控制技术有限公司 | Motor overvoltage and overheating protection system and motor and dish washing machine applying same |
| CN111431146B (en) * | 2020-05-09 | 2022-04-22 | 无锡雷利电子控制技术有限公司 | Motor overvoltage and overheating protection system and motor and dish washing machine applying same |
| CN112865016A (en) * | 2021-01-14 | 2021-05-28 | 深圳市智仁科技有限公司 | Mainboard protection circuit, method and terminal |
| CN112865016B (en) * | 2021-01-14 | 2021-11-30 | 深圳市智仁科技有限公司 | Mainboard protection circuit, method and terminal |
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