CN102101755A - Method for thinning glass substrate - Google Patents
Method for thinning glass substrate Download PDFInfo
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- CN102101755A CN102101755A CN2011100023673A CN201110002367A CN102101755A CN 102101755 A CN102101755 A CN 102101755A CN 2011100023673 A CN2011100023673 A CN 2011100023673A CN 201110002367 A CN201110002367 A CN 201110002367A CN 102101755 A CN102101755 A CN 102101755A
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- glass substrate
- thinning
- etch process
- processing procedure
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Abstract
The invention discloses a method for thinning a glass substrate, which comprises the following steps of: providing a glass substrate; performing primary etching on the glass substrate to thin the glass substrate; grinding the thinned glass substrate to thin the glass substrate again, forming a first treatment surface on the glass substrate, and ensuring that the average toughness (Ra) of the center line of the first treatment surface ranges from 100 to 300 angstroms; and performing secondary etching on the first treatment surface of the glass substrate to form a second treatment surface, and ensuring that the average toughness of the second treatment surface ranges from 10 to 50 angstroms.
Description
Technical field
The invention relates to a kind of thinning method, and particularly relevant for a kind of thinning method of glass substrate.
Background technology
At present, flat-panel screens (for example, liquid crystal flat panel display, organic electro-luminescent display, plasma display panel etc.) has been applied in medium and small Portable TV, mobile telephone widely, has been shot with video-corder consumer electronics or computer products such as enlarging machine, notebook computer, desktop indicating meter and projection TV.Yet, being demand in response to market, the screen of flat-panel display devices constantly develops towards the direction of large size and weight saving.
In knowing technology, be a kind ofly can make the weight of flat-panel screens and the method that thickness reduces with substrate thinning.Yet the flexural strength of the substrate after the thinning can weaken, and then reduces the reliability of substrate, and especially when substrate size was bigger than normal, the reliability of substrate was lower.Thus, in the making processes of display panel, transport the outside destroy in the way, and the whole process rate of influence.Therefore, the substrate intensity that how to increase after the thinning becomes the problem that needs to be resolved hurrily in the present display panel manufacturing technology.
Summary of the invention
The invention provides a kind of thinning method of glass substrate, can promote the intensity of the glass substrate after the thinning.
The present invention proposes a kind of thinning method of glass substrate.One glass substrate is provided.Glass substrate is carried out an etch process for the first time, with the thickness of thinning glass substrate.Glass substrate after the thinning is carried out one grinds processing procedure,, and on glass substrate, form one first treat surface with the thickness of thinning glass substrate once more, wherein the center line average roughness of first treat surface (Ra) scope between 100 dusts (
) to 300 dusts (
) between.First treat surface of glass substrate is carried out an etch process for the second time, to form one second treat surface, wherein the center line average roughness scope of second treat surface between 10 dusts (
) to 50 dusts (
) between.
In one embodiment of this invention, above-mentioned glass substrate after the thinning is ground after the processing procedure, the strength range of glass substrate is between 55 Nt to 65 Nt.
In one embodiment of this invention, above-mentioned first treat surface to glass substrate is carried out after the etch process second time, and the intensity of glass substrate is between 70 Nt to 80 Nt.
In one embodiment of this invention, above-mentioned first time etch process etch-rate between 0.05 μ m/s to 0.1 μ m/s.
In one embodiment of this invention, above-mentioned second time etch process etch-rate between 0.05 μ m/s to 0.1 μ m/s.
In one embodiment of this invention, above-mentioned grinding processing procedure comprise the cmp processing procedure (chemical mechanical polishing, CMP) or electrochemical etching (Electrochemical Polish, ECP).
In one embodiment of this invention, above-mentioned first time, etch process comprised isotropic etch process or anisotropic etching processing procedure.
In one embodiment of this invention, above-mentioned second time, etch process comprised isotropic etch process or anisotropic etching processing procedure.
In one embodiment of this invention, this grinds above-mentioned process after processing procedure, and glass substrate has a scope between 400 microns to 1000 microns thickness.
Based on above-mentioned, because the thinning method of glass substrate of the present invention is after finish for the first time etch process and grinding processing procedure, see through etch process for the second time and disperse stress on the glass baseplate surface, therefore the problem of stress concentration can be effectively avoided producing, and then the intensity of the glass substrate after the thinning can be promoted.
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and cooperate appended graphic being described in detail below.
Description of drawings
Fig. 1 is the schematic flow sheet of thinning method of a kind of glass substrate of one embodiment of the invention.
Diagrammatic cross-section when Fig. 2 A is Fig. 1 step S10.
Diagrammatic cross-section when Fig. 2 B is Fig. 1 step S20.
Diagrammatic cross-section when Fig. 2 C is Fig. 1 step S30.
Diagrammatic cross-section when Fig. 2 D is Fig. 1 step S40.
Wherein: 100a, 100b, 100c, 100d: glass substrate; 102: the first treat surface; 104: the second treat surface; D1: first thickness; D2: second thickness; D3: the 3rd thickness; D4: the 4th thickness; S10～S40: step.
Embodiment
Fig. 1 is the schematic flow sheet of thinning method of a kind of glass substrate of one embodiment of the invention.Diagrammatic cross-section when Fig. 2 A to Fig. 2 D is each step of thinning method of glass substrate of Fig. 1.In this mandatory declaration is that assembly label and partial content among the following embodiment adopt identical label to represent identical or proximate assembly, and the explanation of having omitted constructed content.Please refer to Fig. 1 and Fig. 2 A, the thinning method of the glass substrate of present embodiment may further comprise the steps, at first, step S10 provides a glass substrate 100a, and wherein glass substrate 100a has one first thickness D1, and the first thickness D1 for example is between 0.4 millimeter to 1 millimeter, but and is limited to this.
Then, please refer to Fig. 1 and Fig. 2 B, step S20, glass substrate 100a is carried out an etch process for the first time, the first thickness D1 with thinning glass substrate 100a, and form a glass substrate 100b with one second thickness D2, wherein the second thickness D2 for example is between 0.4 millimeter to 1 millimeter and less than the first thickness D1.In addition, in the first time of this enforcement etch process, for example be being used as example between 0.05 μ m/s to the 0.1 μ m/s to the etch-rate of glass substrate 100a, but be not limited to above-mentioned etch-rate.Etch process for example is isotropic etch process or anisotropic etching processing procedure for the first time.
Then, please refer to Fig. 1 and Fig. 2 C, step S30, glass substrate 100b after the thinning is carried out one grind processing procedure, with the second thickness D2 of thinning glass substrate 100b once more, have the glass substrate 100c of one the 3rd thickness D3 and form one, and on glass substrate 100c, form one first treat surface 102.In the present embodiment, the center line average roughness scope of first treat surface 102 for example be between 100 dusts (
) to 300 dusts (
) between, and the strength range of glass substrate 100c is between 55 Nt to 65 Nt.In addition, the grinding processing procedure of present embodiment can comprise the cmp processing procedure (chemical mechanical polishing, CMP) or electrochemical etching (Electrochemical Polish, ECP).
At last, please refer to Fig. 1 and Fig. 2 D, step S40 carries out an etch process for the second time to first treat surface 102 of glass substrate 100c, to form a glass substrate 100d with one second treat surface 104.Wherein, the center line average roughness scope of second treat surface 104 for example be between 10 dusts (
) to 50 dusts (
) between, and the intensity of glass substrate 100d is between 70 Nt to 80 Nt.In addition, in the second time of present embodiment etch process, for example be being used as example between 0.05 μ m/s to the 0.1 μ m/s to the etch-rate of glass substrate 100c, but be not limited to above-mentioned etch-rate.Etch process for example comprises isotropic etch process or anisotropic etching processing procedure for the second time.At this moment, glass substrate 100d has a scope between 400 microns to 1000 microns the 4th thickness D4.So far, to finish the processing procedure of thinning glass substrate 100a.
Because the thinning method of the glass substrate of present embodiment is after finish the grinding processing procedure, again to center line average roughness between 100 dusts (
) to 300 dusts (
) between first treat surface 102 carry out the etch process second time, with form center line average roughness between 10 dusts (
) to 50 dusts (
) between second treat surface 104.Thus, be distributed in the stress on first treat surface 102 effectively behind the dispersion grinding processing procedure, meaning is that stress can be distributed on second treat surface 104 fifty-fifty, can avoid stress concentration and causes the problem of glass substrate 100c undercapacity.In other words, present embodiment can see through for the second time etch process and effectively avoid producing stress concentration in via the problem on formed first treat surface 102 after grinding processing procedure, and then can promote the intensity of the glass substrate 100d after the thinning.
In addition, the thinning method that present embodiment adopted also can be used on the display panel, and meaning can be carried out the thinning processing procedure to the outside surface of the substrate of display panel, reduces the thickness of display panel integral body, and promotes the structural strength of display panel integral body.
This mandatory declaration be, the processing procedure that Fig. 1 and Fig. 2 A to Fig. 2 D are illustrated only is the usefulness that illustrates as an example, those skilled in the art to meet process requirement, gives unnecessary details when can or increasing possible step according to actual state adjustment, omission herein no longer one by one.
In sum, because the thinning method of glass substrate of the present invention is after finish for the first time etch process and grinding processing procedure, see through etch process for the second time and disperse stress on the glass baseplate surface, therefore the problem of stress concentration can be effectively avoided producing, and then the intensity of the glass substrate after the thinning can be promoted.
Though the present invention discloses as above with embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the invention; when doing a little change and retouching, so protection scope of the present invention is as the criterion when looking appended the claim person of defining.
Claims (9)
1. the thinning method of a glass substrate is characterized in that, comprising:
One glass substrate is provided;
This glass substrate is carried out an etch process for the first time, with the thickness of this glass substrate of thinning;
This glass substrate after the thinning is carried out one grind processing procedure, with the thickness of this glass substrate of thinning once more, and form one first treat surface on this glass substrate, wherein the center line average roughness scope of this first treat surface is between 100 dust to 300 dusts; And
This first treat surface of this glass substrate is carried out an etch process for the second time, and to form one second treat surface, wherein the center line average roughness scope of this second treat surface is between 10 dust to 50 dusts.
2. the thinning method of glass substrate according to claim 1 is characterized in that: wherein this glass substrate after the thinning is carried out after this grinding processing procedure, the strength range of this glass substrate is between 55 Nt to 65 Nt.
3. the thinning method of glass substrate according to claim 1 is characterized in that: wherein this first treat surface of this glass substrate is carried out after this of etch process second time, the intensity of this glass substrate is between 70 Nt to 80 Nt.
4. the thinning method of glass substrate according to claim 1 is characterized in that: wherein this first time etch process etch-rate between 0.05 μ m/s to 0.1 μ m/s.
5. the thinning method of glass substrate according to claim 1 is characterized in that: wherein this second time etch process etch-rate between 0.05 μ m/s to 0.1 μ m/s.
6. the thinning method of glass substrate according to claim 1, it is characterized in that: wherein this grinding processing procedure comprises cmp processing procedure (chemical mechanical polishing, CMP) or electrochemical etching (Electrochemical Polish, ECP).
7. the thinning method of glass substrate according to claim 1 is characterized in that: wherein this, etch process comprised isotropic etch process or anisotropic etching processing procedure first time.
8. the thinning method of glass substrate according to claim 1 is characterized in that: wherein this, etch process comprised isotropic etch process or anisotropic etching processing procedure second time.
9. the thinning method of glass substrate according to claim 1 is characterized in that: wherein through after this grinding processing procedure, this glass substrate has a scope between 400 microns to 1000 microns thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100023673A CN102101755A (en) | 2011-01-07 | 2011-01-07 | Method for thinning glass substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100023673A CN102101755A (en) | 2011-01-07 | 2011-01-07 | Method for thinning glass substrate |
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| Publication Number | Publication Date |
|---|---|
| CN102101755A true CN102101755A (en) | 2011-06-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100023673A Pending CN102101755A (en) | 2011-01-07 | 2011-01-07 | Method for thinning glass substrate |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107263218A (en) * | 2017-06-14 | 2017-10-20 | 合肥市惠科精密模具有限公司 | A kind of thinning method of AMOLED glass substrates |
| CN108290776A (en) * | 2015-11-30 | 2018-07-17 | 旭硝子株式会社 | Glass plate, touch tablet and touch screen |
| CN110052898A (en) * | 2019-04-12 | 2019-07-26 | 东莞市嘉逸光电有限公司 | A kind of preparation method of ultra-thin glass |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001139348A (en) * | 2000-09-26 | 2001-05-22 | Asahi Techno Glass Corp | Glass for electronic optical parts |
| WO2005123617A1 (en) * | 2004-06-22 | 2005-12-29 | Asahi Glass Company, Limited | Process for polishing glass substrate |
| WO2007119860A1 (en) * | 2006-04-12 | 2007-10-25 | Asahi Glass Co., Ltd. | Processing method of glass substrate, and highly flat and highly smooth glass substrate |
| CN101209902A (en) * | 2006-12-29 | 2008-07-02 | 崔灒圭 | Glass thinning method |
| CN101520577A (en) * | 2008-02-26 | 2009-09-02 | 株式会社日立显示器 | Method of manufacturing liquid crystal display device |
-
2011
- 2011-01-07 CN CN2011100023673A patent/CN102101755A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001139348A (en) * | 2000-09-26 | 2001-05-22 | Asahi Techno Glass Corp | Glass for electronic optical parts |
| WO2005123617A1 (en) * | 2004-06-22 | 2005-12-29 | Asahi Glass Company, Limited | Process for polishing glass substrate |
| WO2007119860A1 (en) * | 2006-04-12 | 2007-10-25 | Asahi Glass Co., Ltd. | Processing method of glass substrate, and highly flat and highly smooth glass substrate |
| CN101209902A (en) * | 2006-12-29 | 2008-07-02 | 崔灒圭 | Glass thinning method |
| CN101520577A (en) * | 2008-02-26 | 2009-09-02 | 株式会社日立显示器 | Method of manufacturing liquid crystal display device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108290776A (en) * | 2015-11-30 | 2018-07-17 | 旭硝子株式会社 | Glass plate, touch tablet and touch screen |
| CN108290776B (en) * | 2015-11-30 | 2021-03-12 | Ａｇｃ株式会社 | Glass plate, touch panel and touch screen |
| CN107263218A (en) * | 2017-06-14 | 2017-10-20 | 合肥市惠科精密模具有限公司 | A kind of thinning method of AMOLED glass substrates |
| CN110052898A (en) * | 2019-04-12 | 2019-07-26 | 东莞市嘉逸光电有限公司 | A kind of preparation method of ultra-thin glass |
| CN110052898B (en) * | 2019-04-12 | 2022-01-07 | 东莞市嘉逸光电有限公司 | Preparation method of ultrathin glass |
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Application publication date: 20110622 |