CN102098863A - Electrode board for plasma processing equipment and method for removing process sediments - Google Patents
Electrode board for plasma processing equipment and method for removing process sediments Download PDFInfo
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- CN102098863A CN102098863A CN2009102426845A CN200910242684A CN102098863A CN 102098863 A CN102098863 A CN 102098863A CN 2009102426845 A CN2009102426845 A CN 2009102426845A CN 200910242684 A CN200910242684 A CN 200910242684A CN 102098863 A CN102098863 A CN 102098863A
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Abstract
The invention discloses an electrode board for plasma processing equipment and a method for removing process sediments, and relates to the technical field of plasma processing, wherein the method is invented for easily removing sediments attached to the board surface of the electrode board and avoiding cost rising and possible side effects caused by using a dry method cleaning, such as a greenhouse effect and the like. The electrode board is made of conductive materials, and the board surface of one side of the electrode board is a curved surface formed from bulges and grooves. The method for removing the sediments comprises the step of bombarding an upper electrode by adopting high-frequency plasmas, wherein the board surface on one side of the upper electrode is a curved surface formed from bulges and grooves. The invention can be used in a plasma processing process.
Description
Technical field
The present invention relates to the plasma process technical field, relate in particular to a kind of method that is used for the battery lead plate of plasma processing device and removes the process deposits thing.
Background technology
At present, in production process of semiconductor device, the plasma process technology has obtained using very widely.This technology is meant and excites process gas to generate plasma under certain condition, utilize plasma and substrate (for example silicon chip) that complicated physics, chemical reaction take place and on substrate, finish various processing, as plasma etch process, plasma foil depositing operation etc., obtain the semiconductor structure that needs.With the crystal silicon solar batteries is example, has just adopted PECVD (plasma auxiliary chemical vapor deposition) process deposits battery surface SiNx to subtract the emission passivation layer in its preparation technology's flow process.Fig. 1 shows the structure diagram of PECVD system, and as shown in Figure 1, process gas enters reaction chamber 1 by admission line 5; Top electrode 3 links to each other with the upper cover plate 2 of reaction chamber 1 by insulating ceramics 4, and is connected with radio frequency source 6, and plasma exciatiaon power is provided; Top electrode 3 surfaces generally are provided with through hole, often present spray head structure, make process gas enter reaction chamber equably by aperture densely covered it on and are provoked into and are plasma; Bottom electrode 7 constitutes radio frequency path with top electrode 3 and plasma by earthing rod 8 ground connection in discharge process.Substrate is placed on the bottom electrode 7 usually, carries out depositing of thin film under plasma environment.
But in technical process, it is to occur in wafer surface that deposition process has more than, in the inside of chamber 1, so long as applied the deposition that the body surface of certain resistance all can have material on the path of process gas airflow passes.These deposits are unavoidable, increase along with the operating time, unsettled deposit can drop to wafer surface, influence quality of forming film, form the defect center, have a strong impact on process results, for example unsettled SiNx deposit can form particle and drop on and form the defect center on the wafer, cause the short circuit of crystal silicon battery or open circuit, perhaps cause the unstable working state of battery.Wherein, in chamber 1 inside, have the greatest impact with the deposit on the top electrode 3, because top electrode 3 is located in the top of wafer, particle drops in the technical process will directly influence quality of forming film.Therefore, need the especially deposit on the top electrode 3 of cleaning reaction chamber 1 inside in the certain hour.
Yet traditional top electrode 3 all is designed to planar structure for fear of reasons such as discharges.The process deposits thing is at the beginning of forming, attached on the battery lead plate plane, all be disjunct mutually one by one " island ", those adhere to acarpous material and just split away off because of the reason of bombardment or temperature or air-flow in process engineering, but become fatal threat not enough, because size is little, quantity also seldom.Those solid attachments have but formed the deposit area and have become big core, join together up to numerous " island ", have formed tight solid deposit at electrode plate surface.Therefore, large stretch of deposit of plane electrode plate surface be difficult to be removed, and takes out top electrode 3 and cleans (being wet-cleaned), the operating time and the productive rate of the serious reduction equipment of this operation meeting though can uncap after a period of time in technology.At present, generally adopt physical bombardment or dry method to clean the deposit that adheres on the mode cleaning reaction chamber of auxiliary wet-cleaned and the top electrode on the industrial quarters.
Physical bombardment is meant the inert gas (typical in Ar gas) that charges into suitable partial pressure in the vacuum chamber, and the ion bombardment that utilizes the glow discharge under the low pressure between upper/lower electrode to produce reaches the purpose of cleaning.In this method. inert gas is by ionization and bombard that other structural member in reaction chamber inwall, the reaction chamber comprises battery lead plate and by the plating substrate etc.If in the gas that charges into, add oxygen, can obtain better cleaning performance to some hydrocarbon.Because oxygen can make some oxidizing hydrocarbon generate effumability gas and be got rid of by vacuum system easily.This method is to removing residual gas, and the vacuum degree that improves closed container has apparent in view effect, and some organic attachments are also played the effect that certain cleaning is removed.But for the inorganic attachment of stubbornness of those discord oxygen reactions, because direct current power can't infinitely increase, the energy of ion bombardment is limited, only according to ion bombardment, the deposit as SiNx is difficult to play the effect of cleaning removal.
In order to remove the mineral-type attachment of the comparison stubbornness as SiNx, people have also used the dry method cleaning technique.It is a kind of method of on-line cleaning, mainly is to utilize gas such as the NF that contains F
3Compounds such as N, O to Si under the condition of plasma carry out reactive ion etching, generate SiF
4Deng the gas that volatilizees easily, thereby realize removing particle, the purpose of cleaning top electrode.The cleaning performance that dry method is cleaned is better, but has more side effect.The dry method cleaning is a kind of chemical method in essence, it promptly is the violent chemical reaction of the chemical gas participation of severe corrosive, so on industrial implementation, the chamber material is had special requirement, such as carrying out anodic oxidation at aluminium material surface or adding specific coatings, stainless steel material shows and carries out chemical nickel plating etc., and the use inevitable requirement factory that contains F gas in a large number increases investment, and this has just improved the manufacturing cost and the operating cost of equipment.In addition, NF
3Be a kind of tractable waste gas of not allowing, be discharged in the air and may cause greenhouse effect.
Summary of the invention
Embodiments of the invention provide a kind of battery lead plate that is used for plasma processing device, battery lead plate plate face is difficult for forming obstinate process deposits thing, and the deposit that is attached to battery lead plate plate face is easy to remove, and the cost of avoiding using dry method to clean and bringing rises and may cause side effect such as greenhouse effect.
For achieving the above object, embodiments of the invention adopt following technical scheme:
A kind of battery lead plate that is used for plasma processing device is made by electric conducting material, and the side plate face of battery lead plate is the curved surface that projection and groove form.
After adopting technique scheme, when the battery lead plate that the embodiment of the invention provides is applied to plasma processing device, the curved design of battery lead plate, weakened the adhesive ability of process deposits thing, changed the generation type of deposited particles, be difficult for forming the process deposits thing of large tracts of land stubbornness, and since sedimental adhesive ability a little less than, be easy to remove, needn't adopt chemical drying method to clean and just can reach desirable deposit removal effect, the cost rising of having avoided using dry method to clean and causing and may cause side effect such as greenhouse effect.
Correspondingly, embodiments of the invention also provide a kind of method that is used for the removing process deposits thing of plasma processing device, can effectively remove the process deposits thing, and the cost of avoiding using dry method to clean bringing rises and may cause side effect such as greenhouse effect.
For achieving the above object, embodiments of the invention adopt following technical scheme:
A kind of method that is used for the removing process deposits thing of plasma processing device comprises:
Adopting high-frequency plasma bombardment side plate face is the top electrode of the curved surface of projection and groove formation.
After adopting technique scheme, the method of the removing process deposits thing that embodiments of the invention provide, effectively removed the process deposits thing of top electrode and reaction chamber inside, the cost of avoiding using dry method to clean causing rises and may cause side effect such as greenhouse effect.
Description of drawings
Fig. 1 is the structure diagram of PECVD system;
Fig. 2 is the schematic perspective view of battery lead plate embodiment one of the present invention;
Fig. 3 is the generalized section of battery lead plate embodiment one of the present invention;
Fig. 4 is that battery lead plate embodiment one of the present invention removes sedimental principle schematic;
Fig. 5 is the schematic perspective view of battery lead plate embodiment two of the present invention;
Fig. 6 is the generalized section of battery lead plate embodiment two of the present invention;
Fig. 7 removes the embodiment of method of process deposits thing and the implementation result contrast schematic diagram of prior art for the present invention.
Embodiment
Below in conjunction with accompanying drawing embodiments of the present invention are described in detail.
The technological core of battery lead plate provided by the invention is: the side plate face of described battery lead plate is the curved surface of projection and groove formation.
In technical process, the curved design of battery lead plate, weakened the adhesive ability of process deposits thing, changed the generation type of deposited particles, be difficult for to form the process deposits thing of large tracts of land stubbornness, and since sedimental adhesive ability a little less than, be easy to remove, needn't adopt chemical drying method to clean and just can reach deposit removal effect preferably, the cost rising of having avoided using dry method to clean and causing and may cause side effect such as greenhouse effect.
In order to make those skilled in the art better understand technical scheme of the present invention, also in conjunction with the accompanying drawings the embodiment of battery lead plate of the present invention is described in detail below by specific embodiment.Here be noted that following specific embodiment just in order to describe the present invention, but be not limited to the present invention.
Embodiment one
As Fig. 2 and Fig. 3, the battery lead plate that present embodiment provides, the side plate face of described battery lead plate are the curved surface that projection and groove form.Wherein, described curved surface is wavy curved surface, described projection comprises a plurality of strip projected parts 9, the peak of strip projected parts 9 can be referred to as wavy curved surface " crest ", strip projected parts 9 runs through vertical plate face of described curved surface, form groove 10 between each strip projected parts 9, the minimum point of groove 10 can be referred to as " trough " of wavy curved surface.
During as top electrode, the wave-like of battery lead plate plate face has changed sedimental forming process, has weakened sedimental adhesive ability when the battery lead plate of present embodiment is used for plasma processing device.Originally deposit can be located to pile up at " trough ", and the deposit that " crest " located comes off easily, has so just formed selective deposition, is difficult for forming the process deposits thing of large tracts of land stubbornness on the pole plate plate face.And along with the increase of process time, the deposit that " trough " may occur is grown gradually, surpassing " crest " height then links to each other with adjacent " trough " deposit, perhaps link to each other at the loose deposit of " crest " accumulation attachment that " trough " is fine and close, but this linking to each other is very weak, very loose, it is among a small circle that its deposit interaction force applies area, make in follow-up technology and clean link, the process deposits thing is easy to be eliminated, physical bombardment commonly used is removed sedimental method and just can be reached desirable deposit removal effect, needn't adopt chemical drying method to clean, the cost of having avoided using dry method to clean and causing rises and may cause side effect such as greenhouse effect.Removing sedimental method with Ar gas plasma bombardment commonly used is example, and Fig. 4 shows the principle of the process deposits thing of removing the present embodiment battery lead plate, strengthens by partial discharge and removes deposited particles.As shown in Figure 4, at the beginning of the bombardment beginning, be in " trough " though in deposit absorbed the momentum of Ar+ ion, but this strength also can't be destroyed the adhesive force of it and battery lead plate, so the Ar+ ion just is trapped in the middle of the deposit, form center of positive charge, and electronics is because the mobility height, move to the lower place of resistance value, accumulate in crest location.The loose deposit that is in " crest " position absorbed the Ar+ ion momentum some come off and be drawn out of chamber, part stays Ar+ on the deposit and is neutralized by top electrode and form center of negative charge.Voltage difference when the positive and negative charge center runs up to a certain degree, discharge just occurred.The strength of discharge can penetrate accumulates than fine and close deposit such as SiNx, has destroyed the stable adhesive force of material internal, thereby has broken away from battery lead plate.
Further, the plate face upper edge of the battery lead plate of present embodiment is provided with through hole perpendicular to plate face direction, can be the spray head, when being used for equipment such as plasma foil deposition as top electrode at battery lead plate, process gas is entered uniformly, make the distribution of process gas more even.
Further, the height of strip projected parts 9 is 0.3～1mm, spacing between the adjacent strip projected parts 9 is 1～2mm, the ratio of the spacing of the height of strip projected parts 9 and adjacent strip projection 9 is between 1/2～1/3, and such size design can be easier to avoid sediment pile and sedimental removing.Preferably, the height of strip projected parts 9 is 0.5mm, and the spacing between the adjacent strip projected parts 9 is 1.5mm.Wherein, described height is meant the distance of the peak of projection 9 to the minimum point of groove 10; Spacing is meant the distance between the peak of two adjacent protrusion 9.
Here be noted that the battery lead plate that the embodiment of the invention provides, described projection and groove all will keep smooth curved surface, avoid point discharge.
Embodiment two
As shown in Figure 5 and Figure 6, the battery lead plate that present embodiment provides, the side plate face of described battery lead plate are the curved surface that projection and groove form.Wherein, described projection comprises a plurality of bag shape projectioies 11, and each wraps and forms groove 12 between the shape projection 11.
Identical with embodiment one, present embodiment has weakened the adhesive ability of process deposits thing, also be difficult for to form the process deposits thing of large tracts of land stubbornness, and is easy to remove deposit, and its action effect and remove sedimental principle and see embodiment one for details repeats no more here.
Further, the plate face upper edge of the battery lead plate of present embodiment is provided with through hole perpendicular to plate face direction, can be the spray head, when battery lead plate is used for plasma processing device as top electrode, process gas is entered uniformly, makes the distribution of process gas more even.
Further, the height of bag shape projection 11 is 0.3～1mm, spacing between the adjacent bag shape projection 11 is 1～2mm, the ratio of the height of bag shape projection 11 and the spacing of adjacent bag shape projection 11 is between 1/2～1/3, and such size design can be easier to avoid sediment pile and sedimental removing.Preferably, the height of bag shape projection 11 is 0.5mm, and the spacing between the adjacent bag shape projection 11 is 1.5mm.Wherein, described height is meant the distance of the peak of projection 11 to the minimum point of groove 12; Spacing is meant the distance between the peak of two adjacent protrusion 11.
Here be noted that the battery lead plate that the embodiment of the invention provides, described projection and groove all will keep smooth curved surface, avoid point discharge.
Correspondingly, embodiments of the invention also provide a kind of method that is used for the removing process deposits thing of plasma processing device, comprising: adopt the top electrode of high-frequency plasma bombardment side plate face for the curved surface of projection and groove formation.
After adopting technique scheme, the method for the removing process deposits thing that embodiments of the invention provide has effectively been removed the process deposits thing, and the cost of avoiding using dry method to clean and causing rises and may cause side effect such as greenhouse effect.
Preferably, the frequency of described high frequency is 10-100MHz, utilizes the high frequency voltage activated plasma, control discharge of this frequency range etc., can be removed sedimental effect preferably.Can adopt the radio frequency source of appropriate frequency according to actual needs.
Here be noted that described plasma processing equipment adopted the side plate face for the battery lead plate of the curved surface of projection and groove formation as top electrode, the curved surface of top electrode is relative with the bottom electrode of process equipment in equipment.The top electrode of described curved surface has weakened sedimental adhesive ability on the top electrode, has reduced obstinate sedimental formation on the plate face of top electrode in the machining process, for follow-up removing deposit is laid a solid foundation.Wherein, the battery lead plate that the described embodiments of the invention very of powering on provide, the electrode plate structure of embodiment one and embodiment two for example, detailed explanation has been done in the front, repeats no more here.
The method of the removing process deposits thing that the embodiment of the invention provides is to strengthen the deposit of removing top electrode by discharge equally.Be different from traditional direct current physical bombardment, the method for the removing process deposits thing that the embodiment of the invention provides, the means that adopted high-frequency plasma to bombard.This is because in plasma processing device, the process deposits thing is generally megohmite insulant, as SiNx etc., therefore removes in the sedimental process at plasma bombardment, has just formed electric capacity between top electrode, process deposits thing and the plasma three.Owing to adopted the top electrode of side plate face for the curved surface of projection and groove formation at plasma processing device, the thickness of deposits of the groove part of curved surface is big, compact structure, and other part relative thicknesses are less, if adopt the method for traditional direct current bombardment, sedimental thickness can influence the distributing homogeneity of plasma energy, therefore, adopts the high-frequency plasma bombardment.The adding of high frequency can either be passed electric capacity and be made the even starter of inert gas, the severe degree that alternately can control discharge of simultaneously positive negative electric field, prevent that electric charge accumulation concentrations from causing top electrode generation electric discharge phenomena, the process deposits thing of electric pole plate face and the deposit of reaction chamber inside can be effectively removed, desirable removing effect can be obtained.
In order to verify the beneficial effect of the sedimental method of removing that the embodiment of the invention provides, process deposits thing SiNx with removing PECVD system is an example, the method and the prior art that adopt the embodiment of the invention to provide are respectively carried out sedimental removing to the PECVD system, and described prior art comprises that traditional physical bombardment and chemical drying method clean.
After adopting three kinds of the present invention and prior aries to remove sedimental method, the depositing operation of operative norm in the PECVD system of cleaning--deposit SiNx on silicon chip, process conditions are: pressure 80Pa respectively; Upper electrode power 1700w; Process gas SiH4, NH3, N2, flow are respectively 850,3000,2700sccm; 450 ℃ of reaction temperatures; Sedimentation time 3 minutes.The silicon chip of using the particle detector SP1 growth of KLA-Tencor company afterwards carries out granularity and detects, and test result as shown in Figure 7.Among Fig. 7, the grain value of ordinate for measuring; Abscissa A represents conventional physical bombardment ablution, and process conditions are: direct current; Pressure 10Pa; Upper electrode power 10kw; Process gas Ar and O
2, flow is respectively 2000 and 200sccm;
On behalf of chemical drying method, abscissa B clean, and process conditions are: direct current; Pressure 60Pa; Upper electrode power 1kw; Process gas NF
3And N
2, flow is respectively 500 and 2000sccm;
The method that on behalf of the embodiment of the invention, abscissa C provide, adopting high-frequency plasma bombardment side plate face is the top electrode of the curved surface of projection and groove formation, process conditions are: high-frequency radio frequency source frequency 13.56MHz; Pressure 50Pa; Upper electrode power 2kw; Process gas Ar, flow 2000sccm.
Here to notice that the PECVD system that method A and method B clean adopts plane top electrode.The upper electrode arrangement that the PECVD system that method C cleans adopts embodiment one to provide, the curved surface of top electrode is relative with bottom electrode.
Usually, the particle radius of process deposits thing is bigger, drops to wafer surface in the deposition process quality of deposit film is had a significant impact.Through the PECVD system after cleaning, carry out the depositing operation of standard after, in the particle of wafer surface, the particle that radius is big is few more, cleaning performance is good more.As shown in Figure 7, the sedimental method of the removing that present embodiment provides has obtained the technology performance very approaching with the chemical method wash result, and cleans significantly better than traditional physics method.The sedimental method of the removing that the embodiment of the invention provides can effectively remove the process deposits thing, and the cost of also having avoided using dry method to clean and causing rises and may cause side effect such as greenhouse effect.
Be understandable that, though the present invention is that example is set forth with the plasma foil depositing device, but the invention is not restricted to this, the present invention can be applicable to produce in the plasma processing equipment of process deposits thing, as plasma foil depositing device, plasma etching equipment etc.
The above; only be the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; can expect easily changing or replacing, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of described claim.
Claims (14)
1. a battery lead plate that is used for plasma processing device is made by electric conducting material, it is characterized in that, the side plate face of described battery lead plate is the curved surface that projection and groove form.
2. battery lead plate according to claim 1 is characterized in that,
Described curved surface is the wavy curved surface that projection and groove form;
Described projection comprises a plurality of strip projected parts, and described strip projected parts runs through vertical plate face of described curved surface, forms described groove between each described strip projected parts.
3. battery lead plate according to claim 2 is characterized in that, the height of described strip projected parts is 0.3～1mm.
4. battery lead plate according to claim 3 is characterized in that, the height of described strip projected parts is 0.5mm.
5. battery lead plate according to claim 2 is characterized in that, the spacing between the adjacent described strip projected parts is 1～2mm.
6. battery lead plate according to claim 5 is characterized in that, the spacing between the adjacent described strip projected parts is 1.5mm.
7. battery lead plate according to claim 1 is characterized in that, described projection comprises a plurality of bag shape projectioies, forms described groove between each described bag shape projection.
8. battery lead plate according to claim 7 is characterized in that, it is characterized in that, the height of described bag shape projection is 0.3～1mm.
9. battery lead plate according to claim 8 is characterized in that, the height of described bag shape projection is 0.5mm.
10. battery lead plate according to claim 7 is characterized in that, the spacing between the adjacent described bag shape projection is 1～2mm.
11. battery lead plate according to claim 10 is characterized in that, the spacing between the adjacent described bag shape projection is 1.5mm.
12. a method that is used for the removing process deposits thing of plasma processing device is characterized in that,
Comprise: adopt the top electrode of high-frequency plasma bombardment side plate face for the curved surface of projection and groove formation.
13. method according to claim 12 is characterized in that, the frequency of described high frequency is 10～100MHz.
14. method according to claim 13 is characterized in that, the frequency of described high frequency is 13.56MHz.
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100026 Jiuxianqiao East Road, Chaoyang District, building, No. 1, M5 Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |