CN102097208B - Preparation method of magnetic multilayer-film nano bowl monolayer array - Google Patents
Preparation method of magnetic multilayer-film nano bowl monolayer array Download PDFInfo
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- CN102097208B CN102097208B CN 200910218044 CN200910218044A CN102097208B CN 102097208 B CN102097208 B CN 102097208B CN 200910218044 CN200910218044 CN 200910218044 CN 200910218044 A CN200910218044 A CN 200910218044A CN 102097208 B CN102097208 B CN 102097208B
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Abstract
The invention relates to a preparation method of a magnetic multilayer-film nano bowl monolayer array, specifically comprising the steps of: firstly, preparing a two-dimensional colloid sphere array on a silicon or glass or ITO (Indium Tin Oxide) substrate by adopting a self-assembly technology, then, depositing multi-layer Co/Pt membranes on the colloid sphere array with a sputtering technology, transferring the colloid sphere array growing with the multi-layer membranes to the other substrate, and finally removing colloid spheres by using a selective etching technology to form a nano bowl array on the another substrate. The array is widely applied to the fields of microbiology, pharmacology, high-density magnetic storage, microfluidics and the like.
Description
Technical field
The present invention relates to a kind of preparation method of magnetic multilayer-film nano bowl monolayer array, this array is widely used in the fields such as microbiology, materia medica, high density magnetic storage and Microfluidics.
Background of invention
The bowl-shape array of magnetic Nano has the important application prospect at aspects such as microbiology, materia medica, high density magnetic storage and Microfluidics.The preparation method of report is chemically main at present, incompatible with current large-scale industrial production technique.The material of preparation is also more single simultaneously, with Co or Fe
2o
3single material is the main composition material.And in actual applications, the multilayer film of diverse in function or alloy material have more important and application prospect widely.
Summary of the invention
The objective of the invention is to adopt the colloidal spheres self-assembling technique, shift and the processing step such as selective etch by figure, prepare magnetic multilayer-film nano bowl monolayer array.
The object of the present invention is achieved like this, and this preparation method comprises the following steps:
(1), utilize self-assembling technique to prepare the two-dimensional colloidal ball array on silicon or glass or ITO substrate;
(2), on the colloidal spheres array, by sputtering technology, deposit the Co/Pt multilayer film, make the colloidal spheres top form inverted bowl structure layer, deposited the Multilayer-film nanometer dots structure on the substrate between the colloidal spheres gap;
(3), by long, have the colloidal spheres array of multilayer film to transfer on another piece substrate, and the Multilayer-film nanometer dots structure between the colloidal spheres gap is stayed on original substrate;
(4), utilize the selective etching technology to remove colloidal spheres, form the nano bowl array on another piece substrate;
(5) if prepare discrete nano bowl array, need to before thin film deposition, to colloidal spheres, cut down separation, the content that repeats above-mentioned (2), (3), (4) step can prepare discrete bowl structure array.
In described nano bowl array, nano bowl is the version of individual layer, and size and spacing can be controlled by size and the spacing of colloidal spheres, and it selects the material of deposited film is various.
The present invention has the following advantages and good effect:
The inventive method is of wide application, and can be applied to monofilm, also can be applied to multilayer film; Material can be simple substance, can also be alloy, can also be the film of doping.Compared to previous methods, this patent can be used for preparing individual layer bowl structure array, can be both bowl connected to one another, can be also mutually isolated bowl-shape array.
The accompanying drawing explanation
Fig. 1,2 is two-dimensional colloidal ball array structural representation of the present invention.
Fig. 3,4,5 is deposit film structural representation on colloidal spheres array of the present invention.
Fig. 6,7 is colloidal spheres array transfer organization schematic diagram of the present invention.
Fig. 8,9, form nano bowl array structure schematic diagram for removing colloidal spheres, on the new substrate of another piece.
Figure 10, the 11 nano bowl array SEM that obtain for the present invention scheme
Figure 12,13 is the discrete bowl structure array SEM figure of the present invention.
Embodiment
The principle of institute of the present invention foundation is:
(1), between the colloid array for preparing of self-assembling method and substrate for weak Van der Waals for, be easy to split away off.
(2), to the colloid array deposit film, when film thickness is less than the colloidal spheres radius, film is not connected with substrate, between bead, film thickness is very little.
The preparation method of this nano bowl monolayer array comprises the following steps:
Shown in accompanying drawing 1,2: at first utilize self-assembling technique to prepare the two-dimensional colloidal ball array on silicon substrate;
Shown in accompanying drawing 3,4,5: on the colloidal spheres array, by magnetron sputtering technique, deposit [Co/Pt]
15multilayer film, make the colloidal spheres top form inverted bowl structure layer (Fig. 3,4), deposited the nano-dotted structure A of many film forming on the substrate between the colloidal spheres gap, the structure enlarged diagram that Fig. 5 is nano bowl;
Shown in accompanying drawing 6,7: utilize sticking another substrate of surperficial tool B to have the colloidal spheres array of multilayer film to transfer on it by long, and the dots structure between colloid is stayed on original substrate C;
Shown in accompanying drawing 8,9: utilize the selective etching technology to remove colloidal spheres D, form nano bowl array E on another substrate B; Figure 10,11 is above-mentioned nano bowl array SEM figure.
Shown in accompanying drawing 12,13: if prepare discrete nano bowl array, need to cut down separation to colloidal spheres before in thin film deposition steps (2) (cuts down segregative line and adopts reactive ion etching machine, with oxygen, be source of the gas), other steps repeat the content of above-mentioned (2), (3), (4) can prepare discrete bowl structure array.
Claims (2)
1. the preparation method of a magnetic multilayer-film nano bowl monolayer array, it is characterized in that: it comprises the following steps:
(1), utilize self-assembling technique to prepare the two-dimensional colloidal ball array on silicon or glass or ITO substrate;
(2), on the colloidal spheres array, by sputtering technology, deposit the Co/Pt multilayer film, make the colloidal spheres top form inverted bowl structure layer, deposited the Multilayer-film nanometer dots structure on the substrate between the colloidal spheres gap;
(3), by long, have the colloidal spheres array of multilayer film to transfer on another piece substrate, and the Multilayer-film nanometer dots structure between the colloidal spheres gap is stayed on original substrate;
(4), utilize the selective etching technology to remove colloidal spheres, form the nano bowl array on another piece substrate;
(5) if prepare discrete nano bowl array, need to before thin film deposition, to colloidal spheres, cut down separation, the content that repeats above-mentioned (2), (3), (4) step can prepare discrete bowl structure array.
2. the preparation method of a kind of magnetic multilayer-film nano bowl monolayer array according to claim 1, it is characterized in that: in described nano bowl array, nano bowl is the version of individual layer, size and spacing can be controlled by size and the spacing of colloidal spheres, and it selects the material of deposited film is various.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200910218044 CN102097208B (en) | 2009-12-09 | 2009-12-09 | Preparation method of magnetic multilayer-film nano bowl monolayer array |
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| CN 200910218044 CN102097208B (en) | 2009-12-09 | 2009-12-09 | Preparation method of magnetic multilayer-film nano bowl monolayer array |
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| CN102097208A CN102097208A (en) | 2011-06-15 |
| CN102097208B true CN102097208B (en) | 2013-12-18 |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576925B (en) * | 2013-10-22 | 2017-05-10 | 吉林师范大学 | Method for preparing nano bowl-shaped phase change memory unit |
| CN103626119A (en) * | 2013-12-08 | 2014-03-12 | 中国科学院光电技术研究所 | Preparation method of nano metal ball bowl array structure |
| CN105206175B (en) * | 2015-10-23 | 2018-06-29 | 浙江大学 | Anti-counterfeiting mark based on pattern metal nanocomposite and preparation method thereof |
| CN105652597B (en) * | 2016-04-12 | 2022-09-02 | 京东方科技集团股份有限公司 | Manufacturing method of APR (advanced photo receptor) plate |
| CN108181296B (en) * | 2018-03-14 | 2024-03-19 | 南京信息工程大学 | Optical fiber surface enhanced Raman probe based on surface plasmon effect |
| CN108663387B (en) * | 2018-05-16 | 2021-11-09 | 国家纳米科学中心 | Method for preparing nano-particle TEM sample by wet etching |
| CN109592635B (en) * | 2019-01-22 | 2020-08-11 | 杭州电子科技大学 | Method for controllably preparing composite nano pattern array |
| CN113652689A (en) * | 2021-08-03 | 2021-11-16 | 杭州电子科技大学 | Construction method of curved honeycomb array and application of curved honeycomb array |
| CN114171612B (en) * | 2021-11-02 | 2024-07-19 | 肇庆市华师大光电产业研究院 | Preparation method of condensing type periodic nano bowl structure electrode capable of supporting high-temperature annealing |
Citations (2)
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|---|---|---|---|---|
| CN1920088A (en) * | 2006-09-14 | 2007-02-28 | 电子科技大学 | Preparation method of metal oxide nano array-inverse thin film |
| CN101246911A (en) * | 2008-03-10 | 2008-08-20 | 北京航空航天大学 | Metal microgrid transparent electrode and method for producing the same |
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| US7351607B2 (en) * | 2003-12-11 | 2008-04-01 | Georgia Tech Research Corporation | Large scale patterned growth of aligned one-dimensional nanostructures |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1920088A (en) * | 2006-09-14 | 2007-02-28 | 电子科技大学 | Preparation method of metal oxide nano array-inverse thin film |
| CN101246911A (en) * | 2008-03-10 | 2008-08-20 | 北京航空航天大学 | Metal microgrid transparent electrode and method for producing the same |
Non-Patent Citations (4)
| Title |
|---|
| Co纳米颗粒的形貌和磁性;牛文国等;《功能材料》;20081231;第39卷;第295页-第297页 * |
| 基于直接胶体晶体刻蚀技术的高度有序纳米硅阵列的尺寸及形貌控制;李卫等;《物理学报》;20070731;第56卷(第7期);第4242页-第4246页 * |
| 李卫等.基于直接胶体晶体刻蚀技术的高度有序纳米硅阵列的尺寸及形貌控制.《物理学报》.2007,第56卷(第7期),第4242页-第4246页. |
| 牛文国等.Co纳米颗粒的形貌和磁性.《功能材料》.2008,第39卷第295页-第297页. |
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Inventor after: Wang Yaxin Inventor after: Zhang Yongjun Inventor after: Ding Xue Inventor after: Yang Yanting Inventor after: Yang Jinghai Inventor before: Zhang Yongjun Inventor before: Wang Yaxin Inventor before: Ding Xue Inventor before: Yang Yanting Inventor before: Yang Jinghai |
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