CN102094248A - Annealing device and method - Google Patents
Annealing device and method Download PDFInfo
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- CN102094248A CN102094248A CN 201010618011 CN201010618011A CN102094248A CN 102094248 A CN102094248 A CN 102094248A CN 201010618011 CN201010618011 CN 201010618011 CN 201010618011 A CN201010618011 A CN 201010618011A CN 102094248 A CN102094248 A CN 102094248A
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Abstract
The invention relates to a device and method for carrying out annealing control according to temperature reducing rate, retention time, moving speed, and the like and especially solves the problem that the prior art can not carry out automatic control according to GaN substrate temperature, thus the temperature can be used as a constant for carrying out annealing process research and the stable annealing process thereof on GaN with different thicknesses. In the invention, the functions of automatic judgment, temperature reducing type adjustment, annealing control menu programmability and real-time data storage are realized by adopting closed-loop control, the functions of automation control, operation prompt, visual display, suspension, cancelling, current running state display, and the like for the annealing process of a semiconductor industry are achieved, and a special program can be formulated according to different requirements.
Description
Technical field
The present invention is a kind of semicon industry that is used for, the field that needs annealing process control as epitaxial wafer, GaN substrate stress relief etc., You Shi relates to and is used for combining at hydride gas-phase epitaxy (HVPE) system accurate control substrate rate of temperature fall and annealing process at present, needs accurate control platform to guarantee the industrial production technology stability or need real-time recorded data to be used as in the occasion of scientific research data.
Background technology
In GaN substrate growing technology, hydride gas-phase epitaxy (HVPE) with its high growth rates (can reach more than the 800 μ m/h) but, advantages such as low-cost large area deposition and good uniformity, become the first-selection that the GaN substrate obtains breakthrough, present most research work all concentrate on this.HVPE growing GaN substrate, the thick film of extension 0.5 ~ 1mm on substrates such as sapphire or gallium arsenide normally, and then in modes such as laser lift-off, grinding or etchings with substrate removal, at last the GaN polishing that obtains is formed self-supporting GaN substrate.Yet owing to exist in the hetero epitaxy process, lattice mismatch and thermal mismatching between GaN extension thick film and used substrate have caused that epitaxial film is cracked, warpage etc., and these problems have caused yield rate low, are the expensive major causes of present GaN substrate.
Because lattice and the thermal mismatching of sapphire and GaN are bigger, in temperature-fall period, can form stress and strain, this thermal stresses can make that GaN is cracked at temperature-fall period.How to solve lattice mismatch and thermal mismatching between GaN extension thick film and used substrate? this can slow down this problem by methods such as cooling annealing release stress.For example rate of temperature fall be no more than 10 ℃/minute, when being cooled between 650 ℃ ~ 750 ℃, this temperature range keep 10 ~ 30 minutes, 750 ℃ ~ 600 ℃ back and forth different methods such as vibration cooling annealing achieve the goal.
Summary of the invention
The objective of the invention is to overcome the shortcoming of prior art, the apparatus and method that provide a kind of control substrate rate of temperature fall and annealing process to combine, the present invention design one detect automatically, the annealing Control-Menu calls simply, the real-time storage data, accurately control and stablize apparatus module and the method thereof that the annealing process of lowering the temperature combines.
For reaching above-mentioned purpose, a kind of method for annealing of the present invention, adopt following technical scheme:
A kind of method for annealing relates to the combination that is used for accurately controlling in the hydride gas-phase epitaxy system at present substrate rate of temperature fall and annealing process, and described method comprises the steps:
1., according to production data, write annealing Control-Menu form, temperature is made as quantitatively, list StpIndx in the annealing Control-Menu form for guiding step number, the total step number that expression is carried out and guide the step number of execution at that time; Listing Temperature is temperature, and expression needs this temperature that reaches in the annealed substrate temperature-fall period and the registration of making action; Listing Position is the position, represents that lifting gantry needs the position that moves under the temperature of same StpIndx guide step number; Listing WaiTim is the waiting time, when being illustrated in same StpIndx and guiding the step number upper/lower positions, and time interval number second of slack wait;
2., the data in real time that collects by temperature sensor transmits temperature signal and gives industrial computer;
3., according to the T in the Current Temperatures searching annealing Control-Menu
xAfter being worth recently, lifting/recess servomotor to transmit the real time position signal to industrial computer by servomotor controller, the position moves to the T of institute
xThe StpIndx at place guides the P under the step
xThe position then enters number second time (if second waiting time, number was set to zero, then pressing the rate of temperature fall cooling) of necessary wait, after counting up to second time that must wait for, enters T
X+1Temperature is judged, if be higher than T
X+1, that can continue to wait for, fall up to temperature; If be lower than T
X+1Program can be carried out and move to P
X+1
4., the industrial computer computing sends how actuating signal is given servomotor controller, according to temperature at that time, judge that automatically servomotor controller is controlled lifting/recess servomotor by lift control line, make shift action, and then the control lifting gantry arrives corresponding position.
A kind of annealing device of the present invention, adopt following technical scheme:
A kind of annealing device, include workplatform, workplatform is provided with lifting gantry, lifting gantry one end workspace is provided with temperature sensor, the temperature signal that temperature sensor obtains is transferred to industrial computer, the lifting gantry the other end connects servomotor, and servomotor connects servomotor controller by the motor lift control line, and servomotor controller connects industrial computer and obtains real time position signal between them, actuating signal how.
Temperature is an important parameter of GaN material growth always.The actual temperature annealing of lowering the temperature at that time can guarantee the technology of each sheet according to each stove GaN substrate material.And can not formulate cycle of annealing according to each stove GaN substrate temperature in real time in the HVPE annealing process at present.The present invention is useful in and need carries out in the horizontal or rectilinear equipment of stress relief annealed, adopts oscillatory type annealing, uniform motion annealing, decline one segment distance and rate of temperature fall control and waits for a period of time annealing way all in this patent scope.
Description of drawings
Figure 1 shows that the structural representation that the rectilinear cooling annealing of embodiment of the invention platform is installed.
Figure 2 shows that the structural representation that the horizontal cooling annealing of embodiment of the invention platform is installed.
The signal that Fig. 3 is depicted as the embodiment of the invention transmits synoptic diagram.
Fig. 4 is depicted as the schema that the embodiment of the invention is carried out annealing Control-Menu program.
Figure 5 shows that the vibration cooling annealing temperature curve figure of the embodiment of the invention.
Dependency structure mainly comprises following component (or device) among the figure: temperature signal 1, real time position signal 2, how actuating signal 3, motor lift control line 4, lifting gantry 5.
Embodiment
For further understanding feature of the present invention, technique means and the specific purposes that reached, function, resolve the advantages and spirit of the present invention, by detailed description of the present invention being further understood below in conjunction with accompanying drawing and embodiment.
The technical solution adopted for the present invention to solve the technical problems is:
Hardware components: include workplatform, workplatform is provided with lifting gantry 5, lifting gantry 5 one end workspace are provided with temperature sensor, the temperature signal 1 that temperature sensor obtains is transferred to industrial computer, lifting gantry 5 the other ends connect servomotor, servomotor connects servomotor controllers by motor lift control line 4, and servomotor controller connects industrial computer and transmits real time position signal 2 between them, actuating signal 3 how.
1), the data in real time that collects by temperature sensor transmits temperature signal 1 and gives industrial computer;
2), lifting/recess servomotor to transmit real time position signal 2 to industrial computer by servomotor controller;
3), how the industrial computer computing send actuating signal 3 and give servomotor controller, servomotor controller is by lift control line 4 control liftings/recess servomotor, and then the motion of control lifting gantry 5.
Control section: according to the real time temperature of receiving, the annealing Control-Menu that writes according to technology according to the process engineer.Software meeting basis is temperature at that time, judges automatically, makes shift action, arrives corresponding position.
The no matter growth annealing of still lowering the temperature, temperature is the important parameter of GaN always.The actual temperature annealing of lowering the temperature at that time can guarantee the technology of each sheet according to each sheet GaN substrate.
The process engineer is according to the actual production arts demand, writes following Excel form as the annealing Control-Menu:
Form one annealing Control-Menu schematic table
| StpIndx | Temperature | Position | WaiTim |
| 1 | T 1 | P 1 | S 1 |
| 2 | T 2 | P 2 | S 2 |
| 3 | T 3 | P 3 | S 3 |
| 4 | T 4 | P 4 | S 4 |
| 5 | T 5 | P 5 | S 5 |
| 6 | T 6 | P 6 | S 6 |
| 7 | T 7 | P 7 | S 7 |
| …… | …… | …… | …… |
| 20 | T 20 | P 20 | S 20 |
| 21 | T 21 | P 21 | S 21 |
The first row StpIndx in this annealing Control-Menu schematic table represents the total step number of carrying out and guides the step number of carrying out at that time for guiding step number; Secondary series Temperature is a temperature, and expression needs this temperature that reaches in the annealed substrate temperature-fall period and the registration of making action; The 3rd row Position is the position, represents that lifting gantry needs the position that moves under the temperature of same StpIndx guide step number.The 4th row WaiTim is the waiting time, when being illustrated in same StpIndx and guiding the step number upper/lower positions, and time interval number second of slack wait.
The flow process of being moved is as shown in Figure 4: because after the GaN of different thickness grown, the place temperature was different to some extent at that time.The present invention then is made as temperature quantitatively, according to the T in the Current Temperatures searching " annealing Control-Menu "
xAfter the value, the position moves to the T of institute recently
xThe StpIndx at place guides the P under the step
xThe position then enters number second time (if second waiting time, number was set to zero, then pressing the rate of temperature fall cooling) of necessary wait, after counting up to second time that must wait for, enters T
X+1Temperature is judged, if be higher than T
X+1, that can continue to wait for, fall up to temperature; If be lower than T
X+1Program can be carried out and move to P
X+1For preventing to write people's error of annealing Control-Menu, entered unlimited wait, software can regularly be waited for apart from back (adjustable) cancellation one, carry out moving to P
X+1
The process engineer can write a plurality of annealing Control-Menu Excel form documents, imports (Load) operation according to actual needs and gets final product.
The daily record of real time record annealing process: according in fact studying demand, some data needs to preserve in real time, makes the usefulness of research contrast.After the decline that brings into operation, real time record daily record software is derived Excel daily entry document automatically.
Concrete function: operation each time, software can both be derived the daily record document of a correspondence automatically, and with this daily record document of annealing Control-Menu form document name nominating.Control software can write down important informations such as the underlayer temperature actual value of current real time execution, current lifting gantry position instantaneous value automatically certain hour step-length (for example 30 seconds records once).Behind the menu end of run, journal file stops record.Writing time, interval steps and storing path all can be self-defined.
The example: storing path self-defined: D: My Document Lifter Log writing time step-length: 30 seconds.
Form two real time record annealing process daily records
| Date | Time | StpIndx | Temperature | Position |
| 2010-11-19 | 12:01 | 1 | 899 | 690 |
| ? | 12:02 | 1 | 897 | 987 |
| ? | … | … | … | ? |
| ? | 13:30 | 21 | 100 | 0 |
Example one: oscillatory type cooling annealing
At first hardware platform as shown in Figure 1 sub-module build.The communication port that hardware is installed then drives, and hardware and software communication signal flow are as shown in Figure 3.The cooling annealing user interface software of the present invention's design then is installed.When needs cooling annealing, operation cooling annealing user interface software is written into following Excel annealing Control-Menu form:
Table three oscillatory type annealing control dish
| StpIndx | Temperature | Position | WaiTim |
| 1 | 900 | 700 | 5 |
| 2 | 850 | 670 | 5 |
| 3 | 800 | 645 | 5 |
| 4 | 750 | 620 | 5 |
| 5 | 680 | 595 | 100 |
| 6 | 630 | 545 | 100 |
| 7 | 600 | 530 | 100 |
| 8 | 630 | 545 | 100 |
| 9 | 670 | 605 | 100 |
| 10 | 730 | 615 | 80 |
| 11 | 670 | 605 | 80 |
| 12 | 610 | 525 | 80 |
| 13 | 580 | 510 | 80 |
| 14 | 610 | 530 | 80 |
| 15 | 680 | 600 | 80 |
| 17 | 710 | 610 | 60 |
| 18 | 670 | 600 | 60 |
| 19 | 610 | 535 | 60 |
| 20 | 560 | 505 | 60 |
| 21 | 530 | 465 | 10 |
| 22 | 500 | 425 | 10 |
| 23 | 470 | 385 | 10 |
| 24 | 440 | 345 | 10 |
| 25 | 410 | 305 | 10 |
| 26 | 380 | 265 | 10 |
| 27 | 350 | 225 | 10 |
| 28 | 320 | 185 | 10 |
| 29 | 290 | 145 | 10 |
| 30 | 260 | 105 | 10 |
| 31 | 230 | 65 | 10 |
| 32 | 200 | 25 | 10 |
| 33 | 170 | 0 | 10 |
After being written into (load) form three, click automatic decline button after, the flow process of being moved as shown in Figure 4: seek nearest value in " annealing Control-Menu " according to Current Temperatures, descend by flow process after inserting the closest approach of Current Temperatures.This example is an oscillatory type cooling annealing way, therefore, lifting gantry can be in a bit of position up and down, and principle is to utilize the difference of stove warm area, the temperature difference of high-temperature zone and cold zone makes the annealing of vibrating of GaN substrate between 750 ℃ ~ 580 ℃, the temperature spot setting as shown in Figure 5.
The invention solves can not be the problem of the automatic control of foundation according to the GaN underlayer temperature at present, can do temperature quantitatively thus, and the GaN of different sheet thickness is made annealing process research and stabilizing annealing technology thereof.Make full use of grown cooling behind the GaN substrate of HVPE and get the sheet process and carry out suitable annealing, improve time utilization efficient, in annealing process, realize according to the anneal method of control such as rate of temperature fall, the residence time, translational speed.
The above embodiment has only expressed part embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as limitation of the scope of the invention.Should be pointed out that for the person of ordinary skill of the art without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with claims.
Claims (3)
1. a method for annealing relates to the combination that is used for accurately controlling in the hydride gas-phase epitaxy system at present substrate rate of temperature fall and annealing process, it is characterized in that described method comprises the steps:
1., according to production data, write annealing Control-Menu form, temperature is made as quantitatively, list StpIndx in the annealing Control-Menu form for guiding step number, the total step number that expression is carried out and guide the step number of execution at that time; Listing Temperature is temperature, and expression needs this temperature that reaches in the annealed substrate temperature-fall period and the registration of making action; Listing Position is the position, represents that lifting gantry needs the position that moves under the temperature of same StpIndx guide step number; Listing WaiTim is the waiting time, when being illustrated in same StpIndx and guiding the step number upper/lower positions, and time interval number second of slack wait;
2., the data in real time that collects by temperature sensor transmits temperature signal (1) and gives industrial computer;
3., according to the T in the Current Temperatures searching annealing Control-Menu
xAfter being worth recently, lifting/recess servomotor to transmit real time position signal (2) to industrial computer by servomotor controller, the position moves to the T of institute
xThe StpIndx at place guides the P under the step
xThe position then enters number second time of necessary wait, after counting up to second time that must wait for, enters T
X+1Temperature is judged, if be higher than T
X+1, that can continue to wait for, fall up to temperature; If be lower than T
X+1Program can be carried out and move to P
X+1
4., the industrial computer computing sends how actuating signal (3) is given servomotor controller, according to temperature at that time, judge that automatically servomotor controller is controlled lifting/recess servomotor by lift control line (4), make shift action, and then control lifting gantry (5) arrives corresponding position.
2. a kind of method for annealing according to claim 1 is characterized in that: described annealing Control-Menu sheet format is as follows:
。
3. annealing device, include: workplatform, it is characterized in that: described workplatform is provided with lifting gantry (5), described lifting gantry (5) one end workspace are provided with temperature sensor, the temperature signal (1) that described temperature sensor obtains is transferred to industrial computer, described lifting gantry (5) the other end connects servomotor, described servomotor connects servomotor controller by motor lift control line (4), and described servomotor controller connects industrial computer and transmits round-robin real time position signal (2) between them, actuating signal (3) how.
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| CN 201010618011 CN102094248B (en) | 2010-12-31 | 2010-12-31 | Annealing device and method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010618011 CN102094248B (en) | 2010-12-31 | 2010-12-31 | Annealing device and method |
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|---|---|
| CN102094248A true CN102094248A (en) | 2011-06-15 |
| CN102094248B CN102094248B (en) | 2012-07-11 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110124837A (en) * | 2019-05-17 | 2019-08-16 | 西安奕斯伟硅片技术有限公司 | A kind of breaking method and annealing device of silicon crystal |
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| GB2137524A (en) * | 1983-04-08 | 1984-10-10 | Hitachi Ltd | A process for fabricating a semiconductor material and an apparatus therefor |
| CN1186128A (en) * | 1996-07-10 | 1998-07-01 | 易通公司 | Dual vertical thermal processing furance |
| CN1264759A (en) * | 2000-03-03 | 2000-08-30 | 中国科学院上海光学精密机械研究所 | Annealing device for high-temperature oxide crystal |
| CN1533588A (en) * | 2001-05-23 | 2004-09-29 | 马特森热力产品有限责任公司 | Method and device for thermally treating substrates |
| CN1545137A (en) * | 2003-11-12 | 2004-11-10 | 四川大学 | Gas-filled annealing furnace |
| CN1605116A (en) * | 2001-05-09 | 2005-04-06 | 东京毅力科创株式会社 | Apparatus and method for heat treating semiconductor |
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2010
- 2010-12-31 CN CN 201010618011 patent/CN102094248B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2137524A (en) * | 1983-04-08 | 1984-10-10 | Hitachi Ltd | A process for fabricating a semiconductor material and an apparatus therefor |
| CN1186128A (en) * | 1996-07-10 | 1998-07-01 | 易通公司 | Dual vertical thermal processing furance |
| CN1264759A (en) * | 2000-03-03 | 2000-08-30 | 中国科学院上海光学精密机械研究所 | Annealing device for high-temperature oxide crystal |
| CN1605116A (en) * | 2001-05-09 | 2005-04-06 | 东京毅力科创株式会社 | Apparatus and method for heat treating semiconductor |
| CN1533588A (en) * | 2001-05-23 | 2004-09-29 | 马特森热力产品有限责任公司 | Method and device for thermally treating substrates |
| CN1545137A (en) * | 2003-11-12 | 2004-11-10 | 四川大学 | Gas-filled annealing furnace |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110124837A (en) * | 2019-05-17 | 2019-08-16 | 西安奕斯伟硅片技术有限公司 | A kind of breaking method and annealing device of silicon crystal |
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