CN102088815A - Tube driving device and displacement driving circuit - Google Patents
Tube driving device and displacement driving circuit Download PDFInfo
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- CN102088815A CN102088815A CN200910253646XA CN200910253646A CN102088815A CN 102088815 A CN102088815 A CN 102088815A CN 200910253646X A CN200910253646X A CN 200910253646XA CN 200910253646 A CN200910253646 A CN 200910253646A CN 102088815 A CN102088815 A CN 102088815A
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Abstract
The invention provides a tube driving device and a displacement driving circuit. The tube driving device comprises a switch module, a controller, a resonance module and a level shift circuit, wherein the switch module comprises a high transistor switch and a low transistor switch which are connected in series between an input voltage source and a common potential; the controller is used for controlling the switchover between the high transistor switch and the low transistor switch so as to control the electric power of an input voltage which flows through the switch module; the resonance module is coupled with the switch module for converting the electric power from the input voltage source into an alternating current output signal so as to drive a tube; and the level shift circuit is coupled with the controller, the switch module and a displacement reference potential voltage source and used for generating a high control signal according to the electric potential of a connection point of the high transistor switch and the low transistor switch, the displacement reference potential voltage source and a control signal generated by the controller so as to control the high transistor switch to switch.
Description
Technical field
The present invention relates to a kind of lamp tube driver and displacement drive circuit.
Background technology
See also Fig. 1, Fig. 1 is the circuit diagram of existing fluorescent lamp drive circuit.Ballast controller 10 has comprised a high-end drive circuit HSD and a low-side driver circuitry LSD, drives a corresponding high-end P-type mos field effect transistor M 1 and a low side N type metal oxide semiconductor field effect transistor M 2 in the pin position OUT2 driving switch module 40 by a high-side driver pin position OUT1 and a low side respectively.High-end P-type mos field effect transistor M 1 and low side N type metal oxide semiconductor field effect transistor M 2 are one another in series between an input voltage source VIN and ground connection, according to the control of ballast controller 10 power delivery to the resonance module 30 with input voltage source VIN.Resonance module 30 comprises an inductance L 1 and a capacitor C 2, becomes an AC signal to drive a fluorescent tube 20 power conversions of input voltage source VIN.
Summary of the invention
In view of the processing procedure difficulty and the cost of ballast controller of the prior art higher, displacement drive circuit of the present invention is except providing accurate displacement of control signal, high-end transistor can be used outside the N type metal oxide semiconductor field-effect transistor simultaneously, high pressure resistant element is adopted in the subelement that is coupled to the input power supply in the displacement drive circuit, can effectively completely cut off the high pressure of importing power supply and put on other elements, make controller can reduce the cost of the lamp tube driver of processing procedure difficulty and controller and use controller with the making of low pressure processing procedure.
For reaching above-mentioned purpose, the invention provides a kind of lamp tube driver, comprise a switch module, a controller, a resonance module and a position quasi displacement circuit.The switch module comprises a high side transistor switch and a low side transistor switch that is series between an input voltage source and the common electric potential.Controller is that switching in order to control high side transistor switch and low side transistor switch is with the electric power of control flows through the input voltage of switch module.It is that an alternating current output signal is to drive a fluorescent tube in order to the electric power of changing from input voltage source that the resonance module couples the switch module.Position quasi displacement circuit couples controller, switch module and a displacement reference potential potential source, switches with control high side transistor switch in order to produce a high-end control signal according to the current potential of a tie point of high side transistor switch and low side transistor switch, a control signal that displacement reference potential potential source and controller are produced.
The present invention also provides simultaneously a kind of displacement drive circuit, in order to the accurate position of displacement one control signal, comprises an energy storage path, an energy-storage travelling wave tube, one first and releases that can path and one second release can the path.One first end in energy storage path couples displacement reference potential potential source, in order to transmit the electric power of displacement reference potential potential source.One first end of energy-storage travelling wave tube couples one second end in energy storage path, and one second end of energy-storage travelling wave tube couples a reference potential, in order to store the electric power of displacement reference potential potential source.First release can the path one first end couple first end of energy-storage travelling wave tube, first release can the path one second end couple a control end of a first transistor switch, in order to according to control signal conducting the first transistor switch.Second release can the path one first end couple the control end of the first transistor switch, and second release can the path one second end couple reference potential, in order to the stored electric charge of the parasitic capacitance that discharges the first transistor switch with by the first transistor switch.
Above general introduction and ensuing detailed description are all exemplary in nature, are in order to further specify the present invention.And relevant other objects and advantages of the present invention will be set forth in follow-up explanation and diagram.
Description of drawings
Fig. 1 is the circuit diagram of existing fluorescent lamp drive circuit.
Fig. 2 is the circuit block diagram of lamp tube driver of the present invention.
Fig. 3 is the circuit diagram of the displacement drive circuit of first embodiment of the invention.
Fig. 4 is the circuit diagram of the displacement drive circuit of second embodiment of the invention.
Fig. 5 is a signal waveforms embodiment illustrated in fig. 4.
Fig. 6 is the circuit block diagram of the lamp tube driver of use displacement drive circuit of the present invention.
Fig. 7 is the circuit diagram of the displacement drive circuit of third embodiment of the invention.
Embodiment
See also Fig. 2, Fig. 2 is the circuit block diagram of lamp tube driver of the present invention.Lamp tube driver comprises a controller 100, a displacement drive circuit 110, a resonance module 130 and a switch module 140, in order to drive a fluorescent tube 120.Controller 100 comprises one drive circuit 105 and couples a driving voltage VCC and a common electric potential (being ground connection), exports a control signal Si2 with the current potential according to driving voltage VCC by pin position OUT.Displacement drive circuit 110 comprises a phase-adjusting circuit 150 and a position quasi displacement circuit 160.Phase-adjusting circuit 150 is coupled to position quasi displacement circuit 160, and receives control signal Si2 to adjust the phase place of control signal Si2.Switch module 140 couples an input voltage source VIN and a common electric potential, and it comprises a high side transistor switch T1 and a low side transistor switch T2, and high side transistor switch T1 connects with low side transistor switch T2.In the present embodiment, high side transistor switch T1 and low side transistor switch T2 are N type metal oxide semiconductor field-effect transistor.
Position quasi displacement circuit 160 couples the tie point VS and a displacement reference potential potential source of controller 100, switch module 140 middle and high end transistor switches and low side transistor switch, is as this displacement reference potential potential source with driving voltage VCC at present embodiment.Position quasi displacement circuit 160 receives the control signal Si2 that adjusts phase place through phase-adjusting circuit 150, and a high-end control signal Si1 is adjusted and be output as in the accurate position of control signal Si2 according to the current potential of the tie point VS of high side transistor switch and low side transistor switch.Because when high side transistor switch T1 conducting, the current potential of tie point VS can be promoted to the current potential of input voltage source VIN, because the current potential of input voltage source VIN can reach the height of hundreds of volts, the current potential of the driving voltage VCC far above several volts to tens of volts.By position quasi displacement circuit 160, can guarantee that the accurate position of high-end control signal Si1 is higher than the potential difference of a driving voltage VCC of tie point VS and guarantees high side transistor switch T1 conducting smoothly.In addition, be worth a topic be displacement drive circuit 110 of the present invention have a plurality of can high voltage bearing element, with isolated tie point VS voltage with input voltage source VIN when the high side transistor switch T1 conducting, therefore the withstand voltage demand of controller 100 voltage that only need reach driving voltage VCC gets final product, and this part is illustrated by follow-up embodiment.
In addition, in the present embodiment, controller 100 is only exported the switching of control signal Si2 with control low side transistor switch T2, and produces the switching that high-end control signal Si1 controls high side transistor switch T1 by phase-adjusting circuit 150 and position quasi displacement circuit 160.Cause damage for fear of high side transistor switch T1 and low side transistor switch T2 conducting simultaneously, therefore need guarantee that the ON time of high side transistor switch T1 and low side transistor switch T2 staggers each other.Can adjust the phase place of control signal Si2 by phase-adjusting circuit 150, make the high-end control signal Si1 that produces according to the control signal Si2 after the adjustment phase place, its phase place can maintain a predetermined phase difference with the phase place of control signal Si2, is 180 degree at present embodiment.In some application scenario, for example: two opposite control signal or position quasi displacement circuits 160 of phase place of controller output have inverter functionality, can omit phase-adjusting circuit 150.
Then see also Fig. 3, Fig. 3 is the circuit diagram of the displacement drive circuit of first embodiment of the invention.The displacement drive circuit has comprised phase-adjusting circuit 150 and position quasi displacement circuit 160.Phase-adjusting circuit 150 has comprised resistance R 4, resistance R 5 and a NPN two-carrier junction transistor S2.One end of resistance R 4, resistance R 5 is connected to each other and receives by low side and drives the control signal Si2 that pin position LO is exported.The other end of resistance R 5 is connected to the grid (control end) of low side transistor switch T2, and the control of low side transistor switch T2 suspension control signal Si2 is switched.The other end of resistance R 4 is connected to the emitter of NPN two-carrier junction transistor S2.The base stage of NPN two-carrier junction transistor S2 is connected to driving voltage VCC, and collector electrode is connected to position quasi displacement circuit 160.
Position quasi displacement circuit 160 comprises resistance R 0, resistance R 1, resistance R 2, resistance R 3, a capacitor C 3, a PNP two-carrier junction transistor S1 and diode D2, diode D3.The anode of diode D2 connects driving voltage VCC, and negative terminal connects resistance R 1, the emitter of PNP two-carrier junction transistor S1 and an end of capacitor C 3.The other end of resistance R 1 connects the collector electrode of NPN two-carrier junction transistor S1 and the base stage of PNP two-carrier junction transistor S1, and the other end of capacitor C 3 connects the tie point VS of high side transistor switch T1 and low side transistor switch T2.The collector electrode of PNP two-carrier junction transistor S1 connects an end of resistance R 0, resistance R 2, and the other end of resistance R 2 connects tie point VS, and the other end of resistance R 0 connects the anode of diode D3.The negative terminal of diode D3 connects the grid of high side transistor switch T1 and an end of resistance R 3, and the other end of resistance R 3 connects tie point VS.
Diode D2 in the position quasi displacement circuit 160 is as an energy storage path, store in order to electric power to the capacitor C 3 that transmits driving voltage VCC, make capacitor C 3 that the current potential of signal level displacement and the electric power that driving high side transistor switch T1 switches can be provided as energy-storage travelling wave tube.PNP two-carrier junction transistor S1, resistance R 0, resistance R 1, resistance R 2 and diode D3 release as one first can the path, puts on the grid of high side transistor switch T1 in order to the voltage with capacitor C 3, makes high side transistor switch T1 conducting.Resistance R 3 is released the energy path as one second, uses so that the stored charge energy of high side transistor switch T1 parasitic capacitance ends by resistance R 3 releases.
The operation of phase-adjusting circuit 150 and position quasi displacement circuit 160 is described again.When control signal Si2 was high levle (equaling the current potential of driving voltage VCC), it was zero that low side transistor switch T2 conducting makes the current potential of tie point VS.Because the current potential of tie point VS is zero, is lower than driving voltage VCC, the electric power that makes driving voltage VCC is stored in capacitor C 3 till the cross-pressure of capacitor C 3 equals forward conduction bias voltage that driving voltage VCC deducts diode D2 by diode D2.In addition, the base stage of NPN two-carrier junction transistor S2 and the current potential of emitter are the current potential of driving voltage VCC, the resistance R 1 of can't the conducting electric current so be in cut-off state flowing through.Therefore, the two ends equipotential of resistance R 1, just PNP two-carrier junction transistor S1 base stage and emitter equipotential, PNP two-carrier junction transistor S1 also is in cut-off state, the resistance R 3 of can't the conducting electric current flowing through, resistance R 3 two ends equipotentials.That is to say grid and the source electrode equipotential of high side transistor switch T1, high side transistor switch T1 is a cut-off state.This moment since PNP two-carrier junction transistor S1 and NPN two-carrier junction transistor S2 be and end, PNP two-carrier junction transistor S1 and NPN two-carrier junction transistor S2 so the electric power of driving voltage VCC is unlikely to flow through and loss.
When control signal Si2 transferred low level (being zero potential) to, low side transistor switch T2 ended.At this moment, resistance R 4 is connected to emitter current potential that zero potential makes two-carrier junction transistor S2 toward descending and making two-carrier junction transistor S2 conducting.Because the conducting of two-carrier junction transistor S2, make the electric current resistance R 1 of flowing through form voltage difference and and then make PNP two-carrier junction transistor S1 also be conducting.At this moment, the voltage of capacitor C 3 forms high-end control signal Si1 by PNP two-carrier junction transistor S1, resistance R 0 and diode D3 and puts on high side transistor switch T1, makes high side transistor switch T1 conducting.When high side transistor switch T1 conducting, the current potential of tie point VS rises to the voltage of input voltage source VIN.Therefore, the tie point current potential of diode D2 and capacitor C 3 can rise to (Vin+Vcc-Vth), make diode D2 be in contrary partially and end.Wherein Vin is the voltage of input voltage source VIN, and Vcc is the voltage of driving voltage VCC, and Vth is the forward conduction bias voltage of diode D2.
When control signal Si2 transferred high levle to once again, PNP two-carrier junction transistor S1 and NPN two-carrier junction transistor S2 ended once again.The electric charge of the parasitic capacitance of high side transistor switch T1 discharges by resistance R 3 and makes its grid potential reduce to the current potential that equals tie point VS high side transistor switch T1 is ended.Capacitor C 3 by diode D2 energy storage, gos up to Vcc-Vth the voltage of capacitor C 3 once again once again.
As above-mentioned explanation, when low side transistor switch T2 conducting, high side transistor switch T1 is for ending, otherwise instead then, the problem of damaging so can not cause high side transistor switch T1 and low side transistor switch T2 conducting simultaneously.
In addition, make the tie point current potential of diode D2 and capacitor C 3 can rise to (Vin+Vcc-Vth) when the T1 conducting of end transistor switch, as long as select enough diode D2 of voltage endurance capability and NPN two-carrier junction transistor S2 this moment for use, other elements, the voltage endurance capability that comprises controller 100 only requires to be higher than driving voltage VCC and gets final product.So can significantly reduce the requirement of withstand voltage of controller and most of element, thereby reduce the cost of circuit.
See also Fig. 4, Fig. 4 is the circuit diagram of the displacement drive circuit of second embodiment of the invention.Than embodiment shown in Figure 3, the phase-adjusting circuit 150 ' of present embodiment increases by a Zener diode Z1 and is coupled between low side transistor switch T2 and the resistance R 5, when control signal Si2 transfers high levle to by low level, the conducting time point of low side transistor switch T2 will be postponed backward, can guarantee not conducting simultaneously of high side transistor switch T1 and low side transistor switch T2 more.In addition, change replacement as second resistance R 3 of releasing the energy path in the position quasi displacement circuit 160 ' of present embodiment, transfer the speed that transfers conducting to by ending by reaching to by conducting to quicken high side transistor switch T1 with PNP two-carrier junction transistor S3.The emitter of PNP two-carrier junction transistor S3 connects the grid of high side transistor switch T1, and base stage connects the tie point of resistance R 2 and PNP two-carrier junction transistor S1, and collector electrode connects tie point VS.
Please also refer to Fig. 5, Fig. 5 is a signal waveforms embodiment illustrated in fig. 4.When control signal Si2 was low level, the grid potential V2 of low side transistor switch T2 descended toward zero potential fast.PNP two-carrier junction transistor S1 and NPN two-carrier junction transistor S2 conducting, make high side transistor switch T1 conducting, make the current potential V3 of tie point VS rapidly increase to current potential Vin near input voltage source VIN, and the grid potential of high side transistor switch T1 rises near (Vin+Vcc), and descends slightly because of discharging driven by power high side transistor switch T1 conducting in the back.At this moment, the base potential of PNP two-carrier junction transistor S3 is higher than the emitter current potential and ends.Resistance R in embodiment illustrated in fig. 3 still can flow through electric current 3 this moments, so present embodiment can reduce power loss.
When control signal Si2 was high levle, the grid potential V2 of low side transistor switch T2 rose toward the current potential Vcc of driving voltage VCC fast.At this moment, low side transistor switch T2 conducting drops near zero potential tie point VS current potential V3 fast.PNP two-carrier junction transistor S1 and NPN two-carrier junction transistor S2 end, and resistance R 2 is pulled to the current potential that equals tie point VS with the emitter of PNP two-carrier junction transistor S3 and makes PNP two-carrier junction transistor S3 conducting.At this moment, the stored electric charge of the parasitic capacitance of high side transistor switch T1 can discharge by PNP two-carrier junction transistor S3 fast high side transistor switch T1 is ended fast.In addition, when the grid potential V1 of high side transistor switch T1 reduces to potential difference with tie point VS when being lower than forward conduction voltage, PNP two-carrier junction transistor S3 can end, make the voltage difference of the grid potential V1 of high side transistor switch T1 and tie point VS maintain the voltage difference Vth that approximates forward conduction voltage and (differ bigger with Vth and Vin yardstick, so not shown this difference among Fig. 5), so also can quicken high side transistor switch T1 by ending the speed that transfers conducting to.
Displacement drive circuit of the present invention can integratedly change into the single wafer use of arranging in pairs or groups.See also Fig. 6, Fig. 6 is the circuit block diagram of the lamp tube driver of use displacement drive circuit of the present invention.Lamp tube driver comprises a controller 100, a displacement drive circuit 110 ', a resonance module 130 and a switch module 140, in order to drive a fluorescent tube 120.Displacement drive circuit 110 ' has comprised drive circuit LSD, phase-adjusting circuit 150 and position quasi displacement circuit 160, produces high side transistor switch T1 and the low side transistor switch T2 of two control signals with control switch module 140 with the control signal according to controller 100.Wherein, drive circuit LSD is the driving force that is driven the control signal that pin position LO sent in order to the device that tightens control by low side.Therefore, when using different low side transistor switch T2, can cooperate driving by the drive circuit LSD of displacement drive circuit 110 ' for the different application environment.
See also Fig. 7, Fig. 7 is the circuit diagram of the displacement drive circuit of third embodiment of the invention.Than embodiment shown in Figure 3, the phase-adjusting circuit 150 of present embodiment " receive the output signal SH of the high-side driver pin position HO of controller; and by position quasi displacement circuit 160 " producing high-side driver signal Si1 driving high side transistor switch T1, low side transistor switch T2 is then directly controlled by the output signal SL that the low side of controller drives pin position LO.Wherein, the output signal SL of the output signal SH of high-side driver pin position HO and low side driving pin position LO differs 180 degree.Phase-adjusting circuit 150 " comprised resistance R 6, resistance R 7 and a NPN two-carrier junction transistor S4.Resistance R 6 one ends connect high-side driver pin position HO, and the other end connects the base stage of NPN two-carrier junction transistor S4.One end of resistance R 7 connects the emitter of NPN two-carrier junction transistor S4, other end ground connection.The collector electrode of NPN two-carrier junction transistor S4 is connected to position quasi displacement circuit 160 " in the base stage of PNP two-carrier junction transistor S1.
When the output signal SL of low side driving pin position LO was low level, the output signal SH of high-side driver pin position HO was a high levle.At this moment, low side transistor switch T2 ends, and PNP two-carrier junction transistor S1 and NPN two-carrier junction transistor S4 are conducting, and making high-side driver signal Si1 is high levle (with respect to the current potential of tie point VS), high side transistor switch T1 conducting.When the output signal SL of low side driving pin position LO was high levle, the output signal SH of high-side driver pin position HO was a low level.At this moment, low side transistor switch T2 conducting, and PNP two-carrier junction transistor S1 and NPN two-carrier junction transistor S4 be and end, and making high-side driver signal Si1 is low level (with respect to the current potential of tie point VS), high side transistor switch T1 ends.Therefore, though the signal SL that the grid of low side transistor switch T2 receives is opposite with the signal SH phase place that the displacement drive circuit receives, but by phase-adjusting circuit 150 " carry out after phase place adjusts; guarantee that still the signal SL that the grid of high-side driver signal Si1 that high side transistor switch T1 receives and low side transistor switch T2 receives is anti-phase; be that phase difference 180 is spent, the ON time of high side transistor switch T11 and low side transistor switch T2 is staggered each other.
In addition, at the position quasi displacement circuit 160 of present embodiment ", first resistance R 0 and the diode D3 that releases in the energy path replaced by NPN two-carrier junction transistor S5, second resistance R 3 of releasing the energy path is replaced by PNP two-carrier junction transistor S3.When the output signal SL of low side driving pin position LO was low level, the output signal SH of high-side driver pin position HO was a high levle.At this moment, PNP two-carrier junction transistor S1 and NPN two-carrier junction transistor S4 are conducting, and the collector potential of PNP two-carrier junction transistor S1 is drawn high to be made the S5 conducting of NPN two-carrier junction transistor and PNP two-carrier junction transistor S3 is ended.Therefore, position quasi displacement circuit 160 " output high levle high-side driver signal Si1.Otherwise when the output signal SH of high-side driver pin position HO was low level, PNP two-carrier junction transistor S1 and NPN two-carrier junction transistor S4 ended.At this moment, the collector potential of PNP two-carrier junction transistor S1 is pulled to the equipotential with tie point VS by resistance R 2, therefore will make NPN two-carrier junction transistor S5 by and make PNP two-carrier junction transistor S3 conducting.Therefore, position quasi displacement circuit 160 " output high levle high-side driver signal Si1.
It should be noted that at last: above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (16)
1. lamp tube driver comprises:
One switch module comprises the high side transistor switch and the low side transistor switch that are series between an input voltage source, the common electric potential;
One controller, in order to the switching of controlling this high side transistor switch and this low side transistor switch with the electric power of control flows through this input voltage source of this switch module;
One resonance module couples this switch module, is that an alternating current output signal is to drive a fluorescent tube in order to the electric power of changing from this input voltage source; And
One position quasi displacement circuit, couple this controller, this switch module and a displacement reference potential potential source, switch to control this high side transistor switch in order to produce a high-end control signal according to the current potential of a tie point of this high side transistor switch and this low side transistor switch, a control signal that this displacement reference potential potential source and this controller are produced.
2. lamp tube driver according to claim 1, also comprise a phase-adjusting circuit, be coupled between this controller and this position quasi displacement circuit,, make the phase difference between this high-end control signal and this control signal equal a predetermined phase difference in order to adjust this control signal.
3. lamp tube driver according to claim 2, wherein this phase-adjusting circuit comprises a NPN two-carrier junction transistor, one collector electrode of this NPN two-carrier junction transistor couples this position quasi displacement circuit, one base stage couples this displacement reference potential potential source, and an emitter receives this control signal.
4. lamp tube driver according to claim 2, wherein this phase-adjusting circuit comprises a NPN two-carrier junction transistor, one collector electrode of this NPN two-carrier junction transistor couples this position quasi displacement circuit, and an emitter couples this common electric potential, and a base stage receives this control signal.
5. lamp tube driver according to claim 2, wherein this phase-adjusting circuit comprises a Zener diode, and a negative terminal of this Zener diode couples the control end that this controller, an anode couple this low side transistor switch.
6. lamp tube driver according to claim 1 and 2, wherein this position quasi displacement circuit comprises an energy storage path, one electric capacity, one first releases and can release the energy path in path and one second, one first end in this energy storage path couples this displacement reference potential potential source, one second end in this energy storage path couples one first end of this electric capacity, one second end of this electric capacity couples this tie point, this first one first end of releasing the energy path couples this first end of this electric capacity, this first one second end of releasing the energy path couples a control end of this high side transistor switch, this second one first end of releasing the energy path couples this control end of this high side transistor switch, and this second one second end of releasing the energy path couples this tie point.
7. lamp tube driver according to claim 6, wherein this second is released and can the path comprise a PNP two-carrier junction transistor, in order to the stored electric charge of the parasitic capacitance that discharges this high side transistor switch.
8. lamp tube driver according to claim 6, also comprise a low-side driver circuitry, receive this control signal producing a low side control signal controlling the switching of this low side transistor switch, and the ON time of this low side transistor switch and this high side transistor switch staggers each other.
9. lamp tube driver according to claim 6, wherein this first is released and can the path comprise a diode or a NPN two-carrier junction transistor.
10. displacement drive circuit, the accurate position in order to displacement one control signal comprises:
One energy storage path, one first end in this energy storage path couples this displacement reference potential potential source, in order to transmit the electric power of this displacement reference potential potential source;
One energy-storage travelling wave tube, one first end of this energy-storage travelling wave tube couples one second end in this energy storage path, and one second end of this energy-storage travelling wave tube couples a reference potential, in order to store the electric power of this displacement reference potential potential source;
One first release can the path, this first release can the path one first end couple this first end of this energy-storage travelling wave tube, this first release can the path one second end couple a control end of a first transistor switch, in order to according to this first transistor switch of this control signal conducting; And
One second releases the energy path, this second one first end of releasing the energy path couples this control end of this first transistor switch, and this second release can the path one second end couple this reference potential, in order to the stored electric charge of the parasitic capacitance that discharges this first transistor switch with by this first transistor switch.
11. displacement drive circuit according to claim 10 also comprises a phase-adjusting circuit, being coupled to this, first release can the path, in order to receive this control signal to adjust the phase place of this control signal.
12. displacement drive circuit according to claim 10, also comprise a NPN two-carrier junction transistor, one collector electrode of this NPN two-carrier junction transistor couples this, and first release can the path, and a base stage couples this displacement reference potential potential source, and an emitter receives this control signal.
13. displacement drive circuit according to claim 10 also comprises a NPN two-carrier junction transistor, a collector electrode of this NPN two-carrier junction transistor couple this first release can the path, a grounded emitter and a base stage receive this control signal.
14. displacement drive circuit according to claim 10, wherein this second is released and can the path comprise a PNP two-carrier junction transistor, and a collector electrode of this PNP two-carrier junction transistor couples this reference potential, an emitter and couples this control end of this first transistor switch and a base stage and couple first release can the path.
15. displacement drive circuit according to claim 14, wherein this first is released and can the path comprise a NPN two-carrier junction transistor or a diode.
16. displacement drive circuit according to claim 10, also comprise one drive circuit, in order to control the switching of a transistor seconds switch according to this control signal, wherein this first transistor switch is connected with this transistor seconds switch and the ON time of this first transistor switch and this transistor seconds switch staggers each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910253646XA CN102088815A (en) | 2009-12-07 | 2009-12-07 | Tube driving device and displacement driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910253646XA CN102088815A (en) | 2009-12-07 | 2009-12-07 | Tube driving device and displacement driving circuit |
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| CN102088815A true CN102088815A (en) | 2011-06-08 |
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| CN200910253646XA Pending CN102088815A (en) | 2009-12-07 | 2009-12-07 | Tube driving device and displacement driving circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895478A (en) * | 2016-06-24 | 2016-08-24 | 桂林狮达机电技术工程有限公司 | Electron beam system with function of suppressing discharge harm of electron gun |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992003899A1 (en) * | 1990-08-24 | 1992-03-05 | Coolite Limited | Fluorescent tube driver and lighting system |
| JP2000262065A (en) * | 1999-03-11 | 2000-09-22 | Nagano Japan Radio Co | Inverter device |
| CN201307951Y (en) * | 2008-11-12 | 2009-09-09 | 登丰微电子股份有限公司 | Light-emitting diode drive circuit |
-
2009
- 2009-12-07 CN CN200910253646XA patent/CN102088815A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992003899A1 (en) * | 1990-08-24 | 1992-03-05 | Coolite Limited | Fluorescent tube driver and lighting system |
| JP2000262065A (en) * | 1999-03-11 | 2000-09-22 | Nagano Japan Radio Co | Inverter device |
| CN201307951Y (en) * | 2008-11-12 | 2009-09-09 | 登丰微电子股份有限公司 | Light-emitting diode drive circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895478A (en) * | 2016-06-24 | 2016-08-24 | 桂林狮达机电技术工程有限公司 | Electron beam system with function of suppressing discharge harm of electron gun |
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Application publication date: 20110608 |
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