CN102082160A - Resistive random access memory and manufacturing method thereof - Google Patents
Resistive random access memory and manufacturing method thereof Download PDFInfo
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- CN102082160A CN102082160A CN201010264458XA CN201010264458A CN102082160A CN 102082160 A CN102082160 A CN 102082160A CN 201010264458X A CN201010264458X A CN 201010264458XA CN 201010264458 A CN201010264458 A CN 201010264458A CN 102082160 A CN102082160 A CN 102082160A
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Abstract
The invention provides an RRAM (Resistive Random Access Memory) and a manufacturing method thereof. The RRAM comprises an upper electrode, a lower electrode and a binary resistive metal oxide layer, wherein the binary resistive metal oxide layer is clamped between the upper electrode and the lower electrode. The manufacturing process of the RRAM is not interposed into the manufacturing process of a semiconductor device in the prior art so as to be complex and have low efficiency, and besides, the binary resistive metal oxide layer or the lower electrode can be exposed in oxygen plasmas of a cineration process in the manufacturing process of the RRAM, thus the components or the thickness of the binary resistive metal oxide layer are or is difficult to control so as to cause the quality degradation of the RRAM. The lower electrode of the RRAM is a metal plug or a metal wire arranged on a lower metal layer, and the upper electrode is connected with an upper electrode led wire positioned in a first or upper metal layer. The manufacturing method of the RRAM interposes the manufacturing process of the RRAM into the manufacturing process of the semiconductor device and uses a hard mask layer, thereby preventing the binary resistive metal oxide layer or the lower electrode from being exposed in the oxygen plasmas of the cineration process; and in addition, the invention can enhance the quality and the manufacturing efficiency of the RRAM, simplify the manufacturing process and reduce the manufacturing cost.
Description
The application is: the applying date is that December 17, application number in 2007 are 200710172419.5, title is the dividing an application of patent of invention of " a kind of non-volatility electric impedance memory and manufacture method thereof ".
Technical field
The present invention relates to non-volatility electric impedance memory, relate in particular to a kind of non-volatility electric impedance memory and manufacture method thereof.
Background technology
Non-volatility electric impedance memory (Resistance RAM; Abbreviation RRAM) core is the two resistance metal oxide layers (binary resistive metal oxide layer) with two kinds of resistance states, two resistance metal oxide layers comprise unbodied cupric oxide and tungsten oxide etc., this pair resistance metal oxide layer is exerted pressure behind the potential pulse, and its resistance value can be undergone mutation and be become low resistance; Otherwise if apply potential pulse from another direction and then can make this binary resistance metal oxide be transformed into high value, RRAM promptly uses the two states of two resistance metal oxide layer resistances height to come storage data.RRAM has that access speed is fast, storage density is high and plurality of advantages such as access times are many, and many companies such as Infineon, Sharp, Samsung, Fujitsu have all put in the ranks of the research and development of RRAM and commercial application.
Referring to Fig. 1, it shows RRAM of the prior art, RRAM is made up of top electrode 10, bottom electrode 11 and two resistance metal oxide layers 12 of being folded between upper/lower electrode as shown in the figure, this upper/ lower electrode 10,11 is produced in the special-purpose upper/lower electrode insulating medium layer 13,14, can not be compatible mutually with the manufacture craft of semiconductor device, so cause its make efficiency lower.The RRAM that makes as shown in Figure 1 in the prior art may further comprise the steps: (1) makes bottom electrode insulating medium layer 14; (2) on bottom electrode insulating medium layer 14, carry out photoetching and etching technics to be formed for holding the bottom electrode containing groove of bottom electrode 11; (3) then fill bottom electrode containing groove and form bottom electrode 11 by chemico-mechanical polishing; (4) on bottom electrode, make two resistance metal oxide layers 12 by thermal oxidation or other oxidation technologies; (5) make top electrode insulating medium layer 13 afterwards; (6) on top electrode insulating medium layer 13, carry out photoetching and etching technics and hold the top electrode containing groove of top electrode 10, after finishing etching technics, also remove photoresist by cineration technics with formation; (7) then fill top electrode containing groove and form top electrode 10 by chemico-mechanical polishing.But there are quality problems (for example its potential pulse value that changes data can depart from its normal value) by the RRAM that above-mentioned technology is made, trace it to its cause, when discovery is removed photoresist by ashing (ashing) technology in step (6), the used oxygen plasma of cineration technics is known from experience the quality of the two resistance of influence metal oxide layer, for example can influence its thickness or produce damage thereon.
Therefore, how to provide a kind of non-volatility electric impedance memory and manufacture method thereof to produce high-quality non-volatility electric impedance memory, and improve the compatibility of itself and process for fabrication of semiconductor device, and improve it and make efficient, reduce manufacturing cost and simplify manufacture process, become the technical problem that industry needs to be resolved hurrily.
Summary of the invention
The object of the present invention is to provide a kind of non-volatility electric impedance memory and manufacture method thereof, can improve the quality of non-volatility electric impedance memory by described memory and manufacture method thereof, improve the compatibility of itself and semiconductor device processing procedure simultaneously, and improve it and make efficient and reduce manufacturing cost.
The object of the present invention is achieved like this: a kind of non-volatility electric impedance memory, and described memory is made up of top electrode, metal plug and two resistance metal oxide layer, and described two resistance metal oxide layers are between described top electrode and described metal plug; Described metal plug is arranged in the before-metal medium layer, and described top electrode is drawn lead with top electrode and linked to each other, and top electrode is drawn lead and is arranged in the first metal layer.
In described non-volatility electric impedance memory, metal plug is a tungsten plug, and this pair resistance metal oxide layer is unbodied tungsten oxide.
In described non-volatility electric impedance memory, this power on very titanium nitride or tantalum nitride electrode, its thickness range is 200 to 500 dusts.
In described non-volatility electric impedance memory, all isolate between this before-metal medium layer and this first metal layer by interlayer dielectric layer.
In described non-volatility electric impedance memory, this interlayer dielectric layer has top electrode containing groove and two resistance metal oxide layer containing groove, this top electrode is arranged in the top electrode containing groove, and this pair resistance metal oxide layer is arranged in two resistance metal oxide layer containing grooves.
Another kind of non-volatility electric impedance memory, described memory is made up of top electrode, plain conductor and two resistance metal oxide layer, and described two resistance metal oxide layers are between described top electrode and described plain conductor; Described plain conductor is arranged in the lower metal layer, and described top electrode is drawn lead with top electrode and linked to each other, and top electrode is drawn lead and is arranged in upper metal layers.
In described non-volatility electric impedance memory, metal plug is a copper conductor, and this pair resistance metal oxide layer is unbodied cupric oxide.
In described non-volatility electric impedance memory, this power on very titanium nitride or tantalum nitride electrode, its thickness range is 200 to 500 dusts.
In described non-volatility electric impedance memory, all isolate between this before-metal medium layer and this first metal layer by interlayer dielectric layer.
In described non-volatility electric impedance memory, this interlayer dielectric layer has top electrode containing groove and two resistance metal oxide layer containing groove, this top electrode is arranged in the top electrode containing groove, and this pair resistance metal oxide layer is arranged in two resistance metal oxide layer containing grooves.
Can be exposed in the oxygen plasma of cineration technics with two resistance metal oxide layers or bottom electrode in the prior art, thereby make two resistance burning composition of layer or thickness is difficult to control and then cause the degeneration of non-volatility electric impedance memory quality to compare, non-volatility electric impedance memory manufacture method of the present invention has adopted hard mask layer, thereby avoided that oxygen plasma so can improve the quality of non-volatility electric impedance memory to the harmful effect of two resistance metal oxide layers in the photoresist ashing technology.
Compare with the semiconductor device processing procedure is incompatible with non-volatility electric impedance memory processing procedure in the prior art, bottom electrode of the present invention is to be arranged on the metal plug in the before-metal medium layer or to be arranged on plain conductor in the lower metal layer, this top electrode is drawn lead with the top electrode in the first metal layer or the upper metal layers and is linked to each other, top electrode is drawn lead and is linked to each other and can make simultaneously with the interconnected lead of semiconductor device in addition, thereby improved non-volatility electric impedance memory manufacturing efficient and with the compatibility of semiconductor device, reduce its manufacturing cost, simplified manufacture process.
Description of drawings
Non-volatility electric impedance memory of the present invention and manufacture method thereof are provided by following embodiment and accompanying drawing.
Fig. 1 is the cutaway view of the non-volatility electric impedance memory of prior art;
Fig. 2 is the cutaway view of first embodiment of non-volatility electric impedance memory of the present invention;
Fig. 3 is the cutaway view of second embodiment of non-volatility electric impedance memory of the present invention;
Fig. 4 is the cutaway view of the 3rd embodiment of non-volatility electric impedance memory of the present invention;
Fig. 5 is the cutaway view of the 4th embodiment of non-volatility electric impedance memory of the present invention;
Fig. 6 is the flow chart of non-volatility electric impedance memory manufacture method first embodiment of the present invention;
Fig. 7 and Fig. 8 are respectively the cutaway view that carries out step S60 front and back semiconductor device among Fig. 6;
Fig. 9 to Figure 18 is respectively the cutaway view of finishing step S61 to S 70 back semiconductor device among Fig. 6;
Figure 19 is the flow chart of second embodiment of non-volatility electric impedance memory manufacture method of the present invention;
Figure 20 and Figure 21 are respectively and finish among Figure 19 the cutaway view of semiconductor device behind the step S84 and S85.
Embodiment
Below will be described in further detail non-volatility electric impedance memory of the present invention and manufacture method thereof.
Referring to Fig. 2, it has shown the structure of first embodiment of non-volatility electric impedance memory of the present invention (RRAM), as shown in the figure, described RRAM is arranged on 31 of the before-metal medium layer 30 of semiconductor device and the first metal layers, it comprises top electrode 20, bottom electrode 21 and the two resistance metal oxide layers 22 that are folded between the two, described bottom electrode 21 is for being arranged on the metal plug in the before-metal medium layer 30, described top electrode 20 is drawn lead 310 with the top electrode in the first metal layer 31 and is linked to each other, also be provided with the metal plug 300 that links to each other with semiconductor device in the described before-metal medium layer 30, the first metal layer 31 of described semiconductor device is provided with the interconnected lead 311 in the upper strata that links to each other with described metal plug 300.In the present embodiment, power on very that thickness range is the titanium nitride electrode of 200 to 500 dusts, metal plug is tungsten plug, and correspondingly described two resistance metal oxide layers 41 are unbodied tungsten oxide.
Referring to Fig. 3, it has shown the structure of second embodiment of non-volatility electric impedance memory of the present invention, as shown in the figure, described RRAM is arranged on 51 of the lower metal layer 50 of semiconductor device and upper metal layers, it comprises top electrode 40, bottom electrode 41 and the two resistance metal oxide layers 42 that are folded between the two, described bottom electrode 41 is for being arranged on the plain conductor in the lower metal layer 50, described top electrode 40 is drawn lead 510 with the top electrode in the upper metal layers 51 and is linked to each other, also be provided with the interconnected lead 500 of the lower floor that links to each other with semiconductor device in the described lower metal layer 50, be provided with the interconnected lead 511 in upper strata that links to each other with lower floor interconnected lead 500 in the described upper metal layers 51.In the present embodiment, described lower metal layer 50 is the ground floor metal, described upper metal layers 51 is second metal level, described top electrode 40 is the tantalum nitride electrode of 200 to 500 dusts for thickness range, described plain conductor is a copper conductor, and correspondingly described two resistance metal oxide layers 41 are for belonging to the cuprous oxide of amorphous oxidation copper.
51 of described lower metal layer 50 among 31 of before-metal medium layer 30 among Fig. 2 and described the first metal layers and Fig. 3 and upper metal layers are all isolated by interlayer dielectric layer 32, described interlayer dielectric layer 32 is generally silicon nitride, with reference to follow-up narration as can be known, it is not once to form by a deposition step.
In first and second embodiment of the present invention, have top electrode containing groove and two resistance metal oxide layer containing groove (not shown) in the described interlayer dielectric layer 32, described top electrode containing groove and two resistance metal oxide layer containing groove are cylindrical slot, described top electrode 20,40 and two resistance metal oxide layer 22,42 are separately positioned in top electrode containing groove and the two resistance metal oxide layer containing groove, and it is cylinder.
Referring to Fig. 4, it has shown the structure of the 3rd embodiment of non-volatility electric impedance memory of the present invention, difference with second embodiment in the present embodiment is, interlayer dielectric layer 32 only has top electrode containing groove (not shown), top electrode 40 is arranged in the described top electrode containing groove, and two resistance metal oxide layers 42 are positioned at described spacer medium layer 32 times and are arranged on the described bottom electrode 41.
Referring to Fig. 5, it has shown the structure of the 4th embodiment of non-volatility electric impedance memory of the present invention, difference with second embodiment in the present embodiment is, top electrode 40 in the present embodiment and two resistance metal oxide layer 42 are respectively T shape cylinder and U-shaped cylinder, and described top electrode containing groove and two resistance metal oxide layer containing groove are respectively the groove that is complementary with this T shape cylinder and U-shaped cylinder.
Other it should be noted that, two resistance metal oxide layers 42 among the two resistance metal oxide layers 22 among first embodiment of non-volatility electric impedance memory of the present invention and second embodiment are all made by thermal oxidation technology or oxygen plasma oxidation technology, two resistance metal oxide layers 42 among the 3rd embodiment are made by ion implantation technology, and the two resistance metal oxide layers 42 among the 4th embodiment of non-volatility electric impedance memory of the present invention are made by physical gas-phase deposition or chemical vapor deposition method.
First to fourth embodiment of the non-volatility electric impedance memory of the present invention that Fig. 2 is extremely shown in Figure 5 all has been integrated in RRAM in the interconnect metal of semiconductor device, so, RRAM not only can use the medium between the interconnect metal of semiconductor device to serve as its electrode medium, also can directly use and serve as its bottom electrode, so will reduce the cost of RRAM greatly such as metal plug and plain conductor; Top electrode is drawn lead 310 and can be made simultaneously with the interconnected lead 311 in upper strata in addition, and top electrode is drawn lead 510 and can be made simultaneously with the interconnected lead 511 in upper strata, so can further improve the compatibility of RRAM and fabrication of semiconductor device; Moreover the thickness range of top electrode only is 200 to 500 dusts, and so non-volatility electric impedance memory can be integrated in the interconnect metal of semiconductor device easily; Moreover can freely select the material of top electrode, convenient by selecting better upper electrode material to optimize the performance of RRAM.
First and second embodiment of the manufacture method of non-volatility electric impedance memory of the present invention below will be described in detail in detail, it is that example describes that first and second embodiment of described RRAM manufacture method all are manufactured on the first metal layer with RRAM, in other embodiment of RRAM manufacture method of the present invention, described RRAM is manufactured on the before-metal medium layer.
Referring to Fig. 6, first embodiment of the manufacture method of non-volatility electric impedance memory of the present invention at first carries out step S60, deposition spacer medium layer on the first metal layer.In the present embodiment, described spacer medium layer is a silicon nitride.
Referring to Fig. 7 and Fig. 8, it has shown the cutaway view of the semiconductor device that carries out step S60 front and back respectively, and as shown in the figure, described bottom electrode 41 is the plain conductor in the first metal layer 50, spacer medium layer 60 is deposited on the described the first metal layer 50, and its thickness range is 200 to 500 dusts.Also be provided with the interconnected lead 500 of the lower floor that links to each other with semiconductor device in the described the first metal layer 50.
Then continue step S61, deposited hard mask layer on the spacer medium layer.In the present embodiment, described hard mask layer is the silica that generates by chemical vapor deposition method.
Referring to Fig. 9, in conjunction with referring to Fig. 7 to Fig. 8, Fig. 9 has shown the cutaway view of the semiconductor device behind the completing steps S61, and as shown in the figure, described hard mask layer 61 is deposited on the spacer medium layer 60, and its thickness range is 200 to 500 dusts.
Then continue step S62, the coating photoresist also makes two resistance burning layer patterns by lithography.
Referring to Figure 10, in conjunction with referring to Fig. 7 to Fig. 9, Figure 10 has shown the cutaway view of the semiconductor device behind the completing steps S62, and as shown in the figure, photoresist 62 is deposited on the described hard mask layer 61, carries two resistance burning layer patterns 420 on the photoresist 62.
Then continue step S63, carry out etching technics on hard mask layer, to form two resistance burning layer patterns.
Referring to Figure 11, in conjunction with referring to Fig. 7 to Figure 10, Figure 11 has shown the cutaway view of the semiconductor device behind the completing steps S63, as shown in the figure, all has two resistance burning layer patterns 420 on photoresist 62 and the hard mask layer 61.
Then continue step S64, remove photoresist and under the covering of hard mask layer, carry out etching technics on the spacer medium layer, to form two resistance metal oxide layer containing grooves, use hard mask etching on the spacer medium layer to form two resistance metal oxide layer containing grooves at this, be for fear of make make mask with photoresist and carry out etching after, also need to remove photoresist by cineration technics, the employed oxygen plasma cognition of cineration technics forms the binary resistance metal oxide of uncontrollable its performance in lower electrode surface, thereby influences the quality of subsequent step two resistance metal oxide layers of made on bottom electrode.
Referring to Figure 12, in conjunction with referring to Fig. 7 to Figure 11, Figure 12 has shown the cutaway view of the semiconductor device behind the completing steps S64, as shown in the figure, hard mask layer 61 is all removed because of the etching technics among the step S64, has formed two resistance metal oxide layer containing grooves 421 on the spacer medium layer 60.
Then continue step S65, in two resistance metal oxide layer containing grooves, make two resistance metal oxide layers, can pass through thermal oxidation technology, chemical vapor deposition method or oxygen plasma oxidation technology at this and on bottom electrode and in two resistance metal oxide layer containing groove, form two resistance metal oxide layers.In the present embodiment, two resistance metal oxide layers are cuprous oxide, and it is made by thermal oxidation technology, and the oxidizing temperature scope of described thermal oxidation technology is 150 to 300 degrees centigrade.
Referring to Figure 13, in conjunction with referring to Fig. 7 to Figure 12, Figure 13 has shown the cutaway view of the semiconductor device behind the completing steps S65, and as shown in the figure, two resistance metal oxide layers 42 are arranged in two resistance metal oxide layer grooves 421 fully.
Then continue step S66, deposition top electrode metal level also carries out photoetching and etching technics formation top electrode.In the present embodiment, by described top electrode metal level deposited by physical vapour deposition (PVD), form top electrode by the dry etch process etching, described top electrode metal level is that thickness range is the tantalum nitride layer of 200 to 500 dusts, the described very tantalum nitride electrode that powers on.
Referring to Figure 14, in conjunction with referring to Fig. 7 to Figure 13, Figure 14 has shown the cutaway view of the semiconductor device behind the completing steps S66, and as shown in the figure, top electrode 40 covers on two resistance metal oxide layers 42, and its cross-sectional area is greater than the cross section of two resistance metal oxide layers 42.
Then continue step S67, the interlayer dielectric layer that deposition is made of silicon oxynitride layer, fsg film and the silicon nitride layer of stacked on top of one another.
Referring to Figure 15, in conjunction with referring to Fig. 7 to Figure 14, Figure 15 has shown the cutaway view of the semiconductor device behind the completing steps S67, as shown in the figure, interlayer dielectric layer 63 is formed by silicon oxynitride layer 630, fsg film 631 and silicon nitride layer 632 stacked on top of one another, and interlayer dielectric layer 63 covers on spacer medium layer 60 and the top electrode 40.
Then continue step S68, draw the interconnected metallic channel of metallic channel and semiconductor device by photoetching and etching technics with formation top electrode on silicon oxynitride and fluorine silex glass.
Referring to Figure 16, in conjunction with referring to Fig. 7 to Figure 15, Figure 16 has shown the cutaway view of the semiconductor device behind the completing steps S68, as shown in the figure, have top electrode on silicon oxynitride layer 630 and the fsg film 631 and draw the interconnected metallic channel 65 of metallic channel 64 and semiconductor device, described top electrode draws metallic channel 64 and interconnected metallic channel 65 is the required dual damascene groove of dual-damascene technics.
Then continue step S69, carry out etching technics and remove silicon nitride with the top electrode that exposes described non-volatility electric impedance memory and the interconnected lead of lower floor of semiconductor device, meanwhile, the silicon oxynitride layer of interlayer dielectric layer is also partly or entirely removed.
Referring to Figure 17, in conjunction with referring to Fig. 7 to Figure 16, Figure 17 has shown the cutaway view of the semiconductor device behind the completing steps S69, as shown in the figure, the silicon oxynitride layer 630 of interlayer dielectric layer 63 is all removed, and the interconnected metallic channel 65 that described top electrode is drawn metallic channel 64 and semiconductor device is deepened and passed to the interconnected lead 500 of top electrode 40 and lower floor respectively.
Then continue step S70, form top electrode by copper conductor mosaic technology and CMP (Chemical Mechanical Polishing) process and draw the interconnected lead of lead and semiconductor device upper strata.
Referring to Figure 18, in conjunction with referring to Fig. 7 to Figure 17, Figure 18 has shown the cutaway view of the semiconductor device behind the completing steps S 70, as shown in the figure, top electrode is drawn the interconnected lead 511 of lead 510 and upper strata and is separately positioned on top electrode and draws in metallic channel and the interconnected metallic channel (not shown), and links to each other with lower floor interconnected lead 500 with top electrode 40 respectively.
Referring to Figure 19, second embodiment of the manufacture method of non-volatility electric impedance memory of the present invention at first carries out step S80, deposition spacer medium layer on the first metal layer.In the present embodiment, described spacer medium layer is a silicon nitride.
Then continue step S81, deposited hard mask layer on the spacer medium layer.In the present embodiment, described hard mask layer is the silica that generates by chemical vapour deposition (CVD).
Then continue step S82, the coating photoresist also makes two resistance burning layer patterns by lithography.
Then continue step S83, carry out etching technics on hard mask layer, to form two resistance burning layer patterns.
The cutaway view of semiconductor device is as shown in Figs. 8 to 11 respectively behind the completing steps S80 to S83.
Then continue step S84, carry out ion implantation technology on bottom electrode, to form two resistance metal oxide layers.In the present embodiment, described ion implantation technology is the oxonium ion injection technology.
Referring to Figure 20, in conjunction with referring to Fig. 7 to Figure 11, Figure 20 has shown the cutaway view of the semiconductor device behind the completing steps S84, and as shown in the figure, the two resistance metal oxide layers 52 that form by ion implantation technology are on spacer medium layer 60 times, and are arranged on the bottom electrode 51.
Then continue step S85, remove photoresist and under the covering of hard mask layer, carry out etching technics on the spacer medium layer, to form the top electrode containing groove.In the present embodiment, remove and also can carry out the heat treatment that temperature is no more than 400 degrees centigrade behind the photoresist and stablize formed two resistance metal oxide layer, under the covering of hard mask layer, carry out etching technics subsequently again with formation top electrode containing groove on the spacer medium layer.
Referring to Figure 21, it has shown the cutaway view of the semiconductor device behind the completing steps S85, as shown in the figure, has formed top electrode containing groove 400 on the spacer medium layer 60.
Then continue step S86, deposition top electrode metal level also carries out photoetching and etching technics formation top electrode.In the present embodiment, by described top electrode metal level deposited by physical vapour deposition (PVD), form top electrode by dry etch process, described top electrode metal level is a tantalum nitride layer, the correspondingly described very tantalum nitride electrode that powers on.
Then continue step S87, the interlayer dielectric layer that deposition is made of silicon oxynitride, fluorine silex glass and the silicon nitride of stacked on top of one another.
Then continue step S88, carry out photoetching and etching technics on silicon oxynitride and fluorine silex glass, to form the interconnected metallic channel that top electrode is drawn metallic channel and semiconductor device.
Then continue step S89, carry out etching technics and remove silicon nitride with the top electrode that exposes described non-volatility electric impedance memory and the interconnected lead of metal plug or lower floor of semiconductor device.
Then continue step S90, form top electrode by the copper conductor mosaic technology and draw the interconnected lead of lead and semiconductor device upper strata.
The cutaway view of semiconductor device can be respectively referring to Figure 14 to Figure 18 behind the completing steps S86 to S90, the difference of itself and Figure 14 to Figure 18 is, two resistance metal oxide layers 51 behind the completing steps S86 to S90 in the cutaway view of semiconductor device as shown in figure 20, it is arranged on the spacer medium layer 60 times, and in two resistance burning layer patterns 420 of two resistance metal oxide layer 51 spacer medium layers 60 among Figure 14 to Figure 18 and hard mask layer 61.
It should be noted that metal level of the present invention can comprise metal multilayer film in modern semiconductors technology, constitute by tantalum nitride/tantalum/copper (TaN/Ta/Cu) as the metal level in the interconnected technology of copper.
In sum, non-volatility electric impedance memory manufacture method of the present invention has adopted hard mask layer, thereby has avoided that oxygen plasma so can improve the quality of non-volatility electric impedance memory to the harmful effect of two resistance metal oxide layers in the photoresist ashing technology; Bottom electrode of the present invention in addition is to be arranged on the metal plug in the before-metal medium layer or to be arranged on plain conductor in the lower metal layer, described top electrode is drawn lead with the top electrode in the first metal layer or the upper metal layers and is linked to each other, top electrode is drawn lead and is linked to each other and can make simultaneously with the interconnected lead of semiconductor device in addition, thereby improved non-volatility electric impedance memory manufacturing efficient and with the compatibility of semiconductor device, reduce its manufacturing cost, simplified manufacture process.
Claims (10)
1. a non-volatility electric impedance memory is characterized in that, described memory is made up of top electrode, metal plug and two resistance metal oxide layer, and described two resistance metal oxide layers are between described top electrode and described metal plug; Described metal plug is arranged in the before-metal medium layer, and described top electrode is drawn lead with top electrode and linked to each other, and top electrode is drawn lead and is arranged in the first metal layer.
2. non-volatility electric impedance memory as claimed in claim 1 is characterized in that, metal plug is a tungsten plug, and this pair resistance metal oxide layer is unbodied tungsten oxide.
3. non-volatility electric impedance memory as claimed in claim 1 is characterized in that, this power on very titanium nitride or tantalum nitride electrode, and its thickness range is 200 to 500 dusts.
4. non-volatility electric impedance memory as claimed in claim 1 is characterized in that, all isolates by interlayer dielectric layer between this before-metal medium layer and this first metal layer.
5. non-volatility electric impedance memory as claimed in claim 4, it is characterized in that, this interlayer dielectric layer has top electrode containing groove and two resistance metal oxide layer containing groove, this top electrode is arranged in the top electrode containing groove, and this pair resistance metal oxide layer is arranged in two resistance metal oxide layer containing grooves.
6. a non-volatility electric impedance memory is characterized in that, described memory is made up of top electrode, plain conductor and two resistance metal oxide layer, and described two resistance metal oxide layers are between described top electrode and described plain conductor; Described plain conductor is arranged in the lower metal layer, and described top electrode is drawn lead with top electrode and linked to each other, and top electrode is drawn lead and is arranged in upper metal layers.
7. non-volatility electric impedance memory as claimed in claim 6 is characterized in that, metal plug is a copper conductor, and this pair resistance metal oxide layer is unbodied cupric oxide.
8. non-volatility electric impedance memory as claimed in claim 6 is characterized in that, this power on very titanium nitride or tantalum nitride electrode, and its thickness range is 200 to 500 dusts.
9. non-volatility electric impedance memory as claimed in claim 6 is characterized in that, all isolates by interlayer dielectric layer between this before-metal medium layer and this first metal layer.
10. non-volatility electric impedance memory as claimed in claim 9, it is characterized in that, this interlayer dielectric layer has top electrode containing groove and two resistance metal oxide layer containing groove, this top electrode is arranged in the top electrode containing groove, and this pair resistance metal oxide layer is arranged in two resistance metal oxide layer containing grooves.
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| CN201010264458XA CN102082160A (en) | 2007-12-17 | 2007-12-17 | Resistive random access memory and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094301A (en) * | 2011-11-04 | 2013-05-08 | 上海华虹Nec电子有限公司 | Metal oxide resistive random access memory (RRAM) and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094301A (en) * | 2011-11-04 | 2013-05-08 | 上海华虹Nec电子有限公司 | Metal oxide resistive random access memory (RRAM) and manufacturing method thereof |
| CN103094301B (en) * | 2011-11-04 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | Metal oxide resistance-variable storing device and manufacture method |
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