CN102074929A - Blocking type surge protection device of low-conductive resistor - Google Patents
Blocking type surge protection device of low-conductive resistor Download PDFInfo
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Abstract
The invention relates to a blocking type surge protection device of low-conductive resistor, which has low-conductive resistor characteristics under the application of small trigger current, at least comprising first, second and third depletion type field effect transistors Q1, Q2, Q3; first and second variable resistor elements; a conductive path formed by the serial connection of first and second resistors, and a circuit forming module, wherein the drain electrode of Q1 is connected to the a module input end; the grid electrode of Q1 is connected to the source electrode of Q2; the drain electrode of Q2 is connected to a module output end; the grid electrode of Q2 is connected to the source electrode of Q1; the first variable resistor element is connected to the source electrodes of Q1 and Q3; the second variable resistor element is connected to the source electrode of Q2 and the drain electrode of Q3; the grid electrode of Q3 is respectively connected to the first and second resistors; the other end of the first resistor is connected to the module input end; the other end of the second resistor is connected to the module output end. The device of the invention can specifically protect a single load, and can be used in a system with a high bandwidth.
Description
Technical field
The present invention relates to field of semiconductor devices, be specifically related to the field of semiconductor device of surge protector, be a kind of low on-resistance blocking-up type surge protection device.
Background technology
Power surge or transient overvoltage are defined as the voltage that occurs significantly exceeding design load in the electronic circuit, and it mainly contains thunderbolt, power line overlap joint, power induction or ground bullet.When surge is enough high, transient overvoltage will cause severe impairment to electronic equipments such as computer, phones.It equally also can cause reduce equipment life.
The transient voltage surge inhibitor has limited power surges and has been coupled to the energy of equipment, thereby protects electronic equipment not to be compromised.The product of this class comprises: surge protection thyristor, oxide voltage-sensitive resistance and avalanche diode.This device of two types all is to be connected in parallel on protected circuit, and transient current can flow out from the alternate path that they provide.There is more problem in the protection in parallel of this class, and they comprise:
(1) relevant with concrete surge type, need to select various model coupling;
(2) meeting restriction system bandwidth (capacitive load limits the application that they can only be used for low bandwidth);
(3) somewhat complex design that needs a plurality of elements to constitute causes high failure rate;
(4) often need bigger space;
(5) at protection design, unit cost height.
Have benefited from the introducing of uninterruptable power supply (UPS) at present, make household PC, satellite reception and other domestic. applications equipment have safer protection.But computer links to each other with the external world by data wire with other data systems, and these data wires are in low-down voltage signal work and very responsive.Unfortunately, because the more problem that protection in parallel exists, present surge protection technology still can not give this type systematic enough safety assurances.The result is that numerous companies have paid expensive cost in the reparation of productivity ratio reduction and infringement equipment.
Blocking-up type surge protection device (Blocking Surge Protector is hereinafter to be referred as BSP) is a subversiveness technology, and it provides a kind of brand-new surge protection method.With traditional bypass transient protective device that energy is different from the operation principle of load transfer, BSP connects with load, thereby makes it can specifically protect single load.After it reached his activation threshold value, it can change state, surge is redirected flows through through elementary protection paths such as gas discharge tubes, thereby " blocking-up " enters the electrical surge of protected equipment.
BSP the surge protection principle solved traditional device of surge protector existing problems:
(1) can be suitable for multiple surge type, not have numerous and diverse type selecting;
(2) series connection is used, and does not influence system bandwidth, can be applicable to the protection of high-speed data system;
(3) Application Design is simple, reduces the failure rate of protection design;
(4) realize the overcurrent-overvoltage protection simultaneously, substitute the function of a plurality of devices, the corresponding space hold that reduced;
(5) at the protection design, unit cost reduces.
The trigger current and the conducting resistance relation of being inversely proportional to of conventional blocking-up type surge protection device, trigger current main point differentiate energising resistance more are more little.And require to realize low on-resistance under the less trigger current condition that this moment, conventional blocking-up type surge protection device can't meet the demands in some application scenarios.
Novel low on-resistance blocking-up type surge protection device has the low on-resistance characteristic under the little trigger current application, has further promoted the performance of blocking-up type surge protection device.
Summary of the invention
Technical problem to be solved by this invention is that to protected system provides a kind of low on-resistance blocking-up type surge protection device this device has the low on-resistance characteristic under the little trigger current application.
The present invention solves the problems of the technologies described above the technical scheme of being taked: a kind of low on-resistance blocking-up type surge protection device; comprise depletion mode fet and resistance; described device of surge protector is made of the guiding path of cascaded structure at least first depletion mode fet, second depletion mode fet, the 3rd depletion mode fet, first variable resistor element, the second adjustable resistance element, first resistance and second resistance; wherein
The drain electrode of first depletion mode fet links to each other with module input, and grid links to each other with the source electrode of second depletion mode fet;
The drain electrode of second depletion mode fet links to each other with the module output, and grid links to each other with the source electrode of first depletion mode fet;
First variable resistor element connects the source electrode of first depletion mode fet and the source electrode of the 3rd depletion mode fet;
The second adjustable resistance element connects the drain electrode of the source electrode and the 3rd depletion mode fet of second depletion mode fet;
The grid of the 3rd depletion mode fet links to each other respectively with second resistance with first resistance, and the other end of first resistance links to each other with module input, and the other end of second resistance (R2) links to each other with the module output.
Described three depletion mode fets are all conductings under normal operation, and the entire circuit module shows as " short circuit " state of small resistor, is similar to the characteristic under the fuse operate as normal; When input enters forward surge (being that output enters the negative sense surge); the drain-source pressure drop of described first depletion mode fet and the 3rd depletion mode fet increases with electric current; the two drain-source pressure drop and gate source voltage constitute feedback; feedback forms pinch off trend gradually mutually; after reaching the trigger current that makes the transistor channel pinch off along with electric current; the resistance of tandem paths increases sharply; final input forms high-impedance state to output; the entire circuit module shows as high resistant " blocking-up " state; be similar to the blown state of fuse, thereby " blocking-up " forward surge enters protected system through circuit module.
In like manner; when input enters negative sense surge (being that output enters the forward surge); described second depletion mode fet and the 3rd depletion mode fet feed back the formation pinch off mutually, and " blocking-up " negative sense surge enters protected system through protection module.
Described first variable resistor element and the second adjustable resistance element are on described blocking-up type surge protection device guiding path, and its resistance is very little under running current; When device current reaches trigger current, its resistance several magnitude that can increase sharply.
When input enters forward surge (being that output enters the negative sense surge); the gate source voltage of described first depletion mode fet leaks the decision of pressure drop sum by the source of the first variable resistor pressure drop and the 3rd depletion mode fet; the conducting resistance of first variable resistor element and the 3rd depletion mode fet is all very not little before electric current reaches trigger value; electric current during near trigger value the first variable resistor element resistance increase sharply and much larger than the conducting resistance of the 3rd depletion mode fet; variable resistor element is that first depletion mode fet has been contributed most of gate source voltage after electric current reaches trigger value; cause that first field-effect transistor enters the pinch off state, finally make described device of surge protector enter the forward high resistant " blocking-up ' state.
When input enters negative sense surge (being that output enters the forward surge); the gate source voltage of described second depletion mode fet is by the pressure drop of the second adjustable resistance element and the drain-source pressure drop sum decision of the 3rd depletion mode fet; the conducting resistance of the second adjustable resistance element and the 3rd depletion mode fet is all very not little before electric current reaches trigger value; electric current during near trigger value the second adjustable resistance element resistance increase sharply and much larger than the conducting resistance of the 3rd depletion mode fet; the second adjustable resistance element is that second depletion mode fet has been contributed most of gate source voltage after electric current reaches trigger value; cause that second field-effect transistor enters the pinch off state, finally make described device of surge protector enter the negative sense high resistant " blocking-up ' state.
Because variable resistor element can determine to realize high value under the current condition arbitrarily; be similar to constant-current source; therefore in tandem paths, add the inverse relation of just having removed trigger current and described each transistorized self conducting resistance behind the variable resistor element; guarantee described each transistor self low on-resistance under the little trigger current, thereby realized the low on-resistance of whole device of surge protector.
On the basis of such scheme, described device of surge protector also comprises first feedback loop divider and second feedback loop divider that is made of most resistance, wherein, first feedback loop divider is parallel between the drain electrode of the source electrode of first depletion mode fet and the 3rd depletion mode fet, and the intermediate node of first feedback loop divider links to each other with the grid of first depletion mode fet; Second feedback loop divider is parallel between the source electrode of the source electrode of second depletion mode fet and the 3rd depletion mode fet, and the intermediate node of second feedback loop divider links to each other with the grid of second depletion mode fet.Utilize described feedback loop divider further to reduce the series resistance of two-way blocking-up type surge protection device under " short circuit " state, reduced under the normal operation two-way device of surge protector (BSP) the signal voltage of protected system and the influence of power consumption.
On the basis of such scheme, first feedback loop divider is made of the 4th resistance and the series connection of the 5th resistance, is the intermediate node of first feedback loop divider between the 4th resistance and the 5th resistance; Second feedback loop divider is made of the 6th resistance and the 7th resistance, is the intermediate node of second feedback loop divider between the 6th resistance and the 7th resistance.
On the basis of such scheme, as an improvement of the present invention, described first variable resistor element and the second adjustable resistance element are the depletion mode fet of grid and drain electrode short circuit, and described depletion mode fet is depletion type N slot field-effect transistor or depletion type P channeling effect transistor.
On the basis of such scheme, described grid is a kind of in mos field effect transistor (MOSFET), junction field effect transistor (JFET) and the electrostatic induction field-effect transistor (SIT) with the depletion mode fet of drain electrode short circuit.
On the basis of such scheme, described first depletion mode fet and second depletion mode fet are a kind of in mos field effect transistor (MOSFET), junction field effect transistor (JFET) and the electrostatic induction field-effect transistor (SIT), and the conducting channel type is identical, and with the conducting channel type opposite of the 3rd depletion mode fet.
On the basis of such scheme, described first depletion mode fet and second depletion mode fet are mos field effect transistor (MOSFET).
Further, described first depletion mode fet and second depletion mode fet are high voltage metal-oxide semiconductor field effect transistor (HV MOSFET).
On the basis of such scheme, described the 3rd depletion mode fet is a junction field effect transistor.
On the basis of such scheme, described first depletion mode fet and second depletion mode fet are depletion type n channel metal oxide semiconductor field effect transistor (NMOSFET), and described the 3rd depletion mode fet is a depletion type P channel junction field-effect transistors (PJFET); Perhaps,
Described first depletion mode fet and second depletion mode fet are depletion type P-channel metal-oxide-semiconductor field-effect transistor (PMOSFET), and described the 3rd depletion mode fet is a depletion type N channel junction field-effect transistors (NJFET).
The further preferred high pressure depletion type n channel metal oxide semiconductor field effect transistor (HV NMOSFET) of described first depletion mode fet and second depletion mode fet, the 3rd depletion mode fet is a depletion type P channel junction field-effect transistors (PJFET).
Drain electrode by high pressure depletion type n channel metal oxide semiconductor field effect transistor (HV NMOSFET) links to each other with two-way device of surge protector (BSP) module input or module output, can bear the high pressure of positive and negative several hectovolts when guaranteeing two-way device of surge protector (BSP) " blocking-up ".Consider that depletion type P channel junction field-effect transistors (PJFET) compares other depletion type P-channel field-effect transistor (PEFT) transistors and have more superior on-state performance and wideer pinch-off voltage scope, therefore select depletion type PJFET to connect with depletion type HV NMOSFET, when having guaranteed two-way BSP in series resistance littler under " short circuit " state with in generation " blocking-up " and depletion type HV NMOSFET feed back formation mutually and turn-off faster.
The invention has the beneficial effects as follows:
The present invention is the different semiconductor device of a kind of and most of device of surge protector; need not the power supply supply; its behavior is similar to the fuse that can reset, is connected because it can disconnect in the internal trigger of nanosecond time and with the electronic equipment of fragility, returns to normal in the past up to electrical surge.With traditional bypass transient protective device that energy is different from the operation principle of load transfer, blocking-up type surge protection device is connected with load, thereby makes it can specifically protect single load.
Because device of surge protector of the present invention can be connected on the protected circuit, therefore can be used in the system of high bandwidth, and traditional devices to be protection devices in parallel such as piezo-resistance, thyristor or avalanche diode all can't be applied to these systems.
Application process of the present invention is simple, is convenient to protection design, realizes overvoltage and overcurrent protection simultaneously, need still less element and littler space, can substitute polytype device, the relative unit cost is lower.
The present invention has realized the blocking-up protection under the little trigger current condition of low on-resistance on the basis of blocking-up type surge protection technology, further promoted the performance of blocking-up type surge protection device.
Description of drawings
Fig. 1 is the circuit structure schematic diagram of the embodiment of the invention 1.
Fig. 2 is the circuit structure schematic diagram of the embodiment of the invention 2.
Fig. 3 is the circuit structure schematic diagram of the embodiment of the invention 3.
Fig. 4 is the circuit structure schematic diagram of the embodiment of the invention 4.
Label declaration in the accompanying drawing
10,20,30,40-device of surge protector
101,201,301,401-first variable resistor element
102,202,302,402-the second adjustable resistance element
Q1-first depletion mode fet
Q2-second depletion mode fet
Q3-second depletion mode fet
The R1-first resistance R 2-second resistance R 3-the 3rd resistance (not use and not shown in the figures)
The R-first feedback loop divider R4-the 4th resistance R 5-the 5th resistance
R '-first feedback loop divider R6-the 6th resistance R 7-the 7th resistance
S-source electrode D-drain electrode G-grid.
Embodiment
Below in conjunction with drawings and Examples the present invention is further set forth.
Embodiment 1
See also Fig. 1 for shown in the circuit structure schematic diagram of the embodiment of the invention 1; a kind of two-way blocking-up type surge protection device; described device of surge protector 10 is by the first depletion mode fet Q1(depletion type n channel metal oxide semiconductor field effect transistor NMOSFET); the second depletion mode fet Q2(depletion type n channel metal oxide semiconductor field effect transistor NMOSFET); the 3rd depletion mode fet Q3(depletion type P channel junction field-effect transistors PJFET); first variable resistor element 101; the second adjustable resistance element 102; the first resistance R 1(constant-current source resistance) and the second resistance R 2(constant-current source resistance) constitute the guiding path of cascaded structure; form circuit module; wherein, described device of surge protector 10(BSP) annexation of inner each device is described below:
The drain electrode S of the first depletion mode fet Q1 links to each other with module input, and grid G links to each other with the source S of the second depletion mode fet Q2;
The drain D of the second depletion mode fet Q2 links to each other with the module output, and grid G links to each other with the source S of the first depletion mode fet Q1;
Between the source S of first variable resistor element, 101 connections, the first depletion mode fet Q1 and the source S of the 3rd depletion mode fet Q3;
Between the source S of the second adjustable resistance element 102 connections second depletion mode fet Q2 and the drain D of the 3rd depletion mode fet Q3;
The grid G of the 3rd depletion mode fet Q3 links to each other respectively with second resistance R 2 with first resistance R 1;
The other end of first resistance R 1 links to each other with module input, and the other end of second resistance R 2 links to each other with the module output.
Low on-resistance blocking-up type surge protection device 10(BSP) operation principle is described below:
When the protected circuit operate as normal; module input and output pressure drop are less; because the first depletion mode fet Q1, the second depletion mode fet Q2 and the 3rd depletion mode fet Q3 of series connection are depletion types; and the resistance of first variable resistor element 101 and first variable resistor element 102 is also very little; so module input is the small resistor characteristic to output, this moment, the two-way device of surge protector 10 as whole module showed as " short circuit " state normally.
When protected circuit takes place to overlap the forward surge that causes by thunderbolt or power supply; the pressure drop that module input and output bear increases rapidly; the electric current of two-way device of surge protector 10 of flowing through also increases rapidly, thereby the source that causes drain-source pressure drop, the 3rd depletion mode fet Q3 of the first depletion mode fet Q1 is leaked the pressure drop of the pressure drop and first variable resistor element 101 and increased sharply.
Because the negative grid source bias voltage that the pressure drop sum feedback of the pressure drop and first variable resistor element 101 becomes the first depletion mode fet Q1 is leaked in the source of the 3rd depletion mode fet Q3, the pressure drop of leaking the pressure drop and first variable resistor element 101 along with the source of the 3rd depletion mode fet Q3 increases, the grid source bias voltage negative sense of the first depletion mode fet Q1 increases, cause the drain-source resistance of the first depletion mode fet Q1 to increase, cause that further the drain-source pressure drop of the first depletion mode fet Q1 increases.
Because the drain potential of the first depletion mode fet Q1 is by the coupling of the constant current source of first resistance R, 1 formation, be directly proportional with the grid potential of the 3rd depletion mode fet Q3, therefore the pressure drop sum of the drain-source pressure drop of the first depletion mode fet Q1 and first variable resistor element 101 feedback becomes the positive grid source bias voltage of field-effect transistor Q3.Along with the drain-source pressure drop of the first depletion mode fet Q1 and the increase of first variable resistor element, 101 pressure drop sums, the grid source bias voltage forward of the 3rd depletion mode fet Q3 increases, and causes the source ohmic leakage of field-effect transistor Q3 to increase.And the source leakage pressure drop that the source ohmic leakage increase of the 3rd depletion mode fet Q3 causes forms feedback, causes that further the grid source bias voltage negative sense of the first depletion mode fet Q1 increases.
As mentioned above; when surge forward current enters input; form the circulation feedback of turn-offing mutually between first depletion mode fet Q1 of two-way device of surge protector 10 inner two series connection and the 3rd depletion mode fet Q3; the second depletion mode fet Q2 conducting all the time; electric current up to the flow through first depletion mode fet Q1 and the 3rd depletion mode fet Q3 and first variable resistor element 101 and the second adjustable resistance element 102 reaches the threshold value that first variable resistor element 101 and the 3rd depletion mode fet Q3 are turn-offed fully; first variable resistor element, 101 resistances significantly increase rapidly; the first depletion mode fet Q1 and the 3rd depletion mode fet Q3 can enter cut-off state rapidly; module input forms high resistant to output, and this moment, the two-way device of surge protector 10 as whole module showed as " blocking-up " state.
In like manner; when protected circuit generation negative sense surge; the output that is equivalent to module this moment enters the forward surge; depletion type N raceway groove second depletion mode fet Q2 that links to each other with the module output and depletion type P raceway groove the 3rd depletion mode fet Q3 form the circulation feedback of mutual shutoff; the first depletion mode fet Q1 conducting all the time of depletion type N raceway groove; electric current up to the flow through second depletion mode fet Q2 and the 3rd depletion mode fet Q3 and first variable resistor element 101 and the second adjustable resistance element 102 reaches the threshold value that the second depletion mode fet Q2 and the 3rd depletion mode fet Q3 are turn-offed fully; the second adjustable resistance element 102 resistances significantly increase rapidly; the second depletion mode fet Q2 and the 3rd depletion mode fet Q3 can enter cut-off state rapidly; the module output forms high resistant to input; thereby the forward surge that blocking-up enters from the module output, i.e. the negative sense surge that enters from module input.
Embodiment 2
See also Fig. 2 for shown in the circuit structure schematic diagram of the embodiment of the invention 2; be a kind of improvement structure at the device of surge protector of embodiment 1; in the device of surge protector 20, first variable resistor element 201 and the second adjustable resistance element 202 are the N channel depletion type field effect transistor of grid and drain electrode short circuit.
Device of surge protector 20 also comprises the first feedback loop divider R and the second feedback loop divider R ', wherein, the first feedback loop divider R is made of the 4th resistance R 4 and 5 series connection of the 5th resistance R, between the 4th resistance R 4 and the 5th resistance R 5 is the intermediate node of the first feedback loop divider R, the first feedback loop divider R is parallel between the drain D of the source S of the first depletion mode fet Q1 and the 3rd depletion mode fet Q3, and the intermediate node of first feedback loop divider 101 ' links to each other with the grid G of the first depletion mode fet Q1; The second feedback loop divider R ' is made of the 6th resistance R 6 and the 7th resistance R 7, between the 6th resistance R 6 and the 7th resistance R 7 is the intermediate node of the second feedback loop divider R ', the second feedback loop divider R ' is parallel between the source S of the source S of the second depletion mode fet Q2 and the 3rd depletion mode fet Q3, and the intermediate node of second feedback loop divider 102 ' links to each other with the grid G of second depletion mode fet.
By the first feedback loop divider R that the 4th resistance R 4 and the 5th resistance R 5 constitute, the pressure drop sum that the pressure drop and first variable resistor element 201 are leaked in the source of the 3rd depletion mode fet Q3 feeds back to the negative grid source bias voltage of the first depletion mode fet Q1 by original V
GSReduce to R4/ (R4+R5) * V
GSNegative grid source absolute value of voltage than the first depletion mode fet Q1 of the device of surge protector 10 of embodiment 1 under the kindred circumstances is little; thereby guaranteed that the first depletion mode fet Q1 has less drain-source resistance when working under equal electric current; reduced the series resistance of device of surge protector 20 under " short circuit " state, reduced the signal voltage of protected system and the influence of power consumption.
In like manner, by the second feedback loop divider R ' that the 6th resistance R 6 and the 7th resistance R 7 constitute, pressure drop is leaked in the source of the 3rd depletion mode fet Q3 and the second adjustable resistance element 202 feeds back to the negative grid source bias voltage of the second depletion mode fet Q2 by original V
GSReduce to R6/ (R6+R7) * V
GS, the negative grid source absolute value of voltage than the second depletion mode fet Q2 of the device of surge protector 10 of embodiment 1 under the kindred circumstances is little, has also reduced the series resistance of device of surge protector 20 under " short circuit " state.
Embodiment 3
See also Fig. 3 for shown in the circuit structure schematic diagram of the embodiment of the invention 3; be another improvement project at the device of surge protector of embodiment 2; in the device of surge protector 30, first variable resistor element 301 and the second adjustable resistance element 302 are the P channel depletion type field effect transistor of grid and drain electrode short circuit.
Embodiment 4
See also Fig. 4 for shown in the circuit structure schematic diagram of the embodiment of the invention 4; be a improvement project at the device of surge protector of embodiment 1 and embodiment 3; the first depletion mode fet Q1 of device of surge protector 40 and the second depletion mode fet Q2 are high pressure depletion type n channel metal oxide semiconductor field effect transistor (HV NMOSFET), and the 3rd depletion mode fet Q3 is a depletion type P channel junction field-effect transistors (PJFET).
In the device of surge protector 40, first variable resistor element 401, the second adjustable resistance element 402 and embodiment 1 are similar.
Because the inner backward diode that has a high pressure of HV NMOSFET drain-source, it has guaranteed that HV NMOSFET can bear the high pressure of several hectovolts.The HV NMOSFET of depletion type can utilize lateral double diffusion metal oxide semiconductor field-effect transistor (LDMOSFET) and longitudinal double diffusion metal oxide semiconductor field effect transistor (VDMOSFET) to realize at present.Drain terminal by depletion type HV NMOSFET links to each other with BSP module input and output, can bear the high pressure of positive and negative several hectovolts in the time of can guaranteeing two-way BSP " blocking-up ".Consider that depletion type P channel junction field-effect transistors PJFET compares other depletion type P-channel field-effect transistor (PEFT) transistors and has more superior on-state performance and wideer pinch-off voltage scope, therefore select depletion type PJFET connect with depletion type HV NMOSFET, guaranteed series resistance littler under two-way BSP " short circuit " state and when generation " blocking-up " and depletion type HV NMOSFET feed back shutoff faster mutually.
Claims (10)
1. low on-resistance blocking-up type surge protection device; comprise depletion mode fet and resistance; it is characterized in that: described device of surge protector comprises that first depletion mode fet (Q1), second depletion mode fet (Q2), the 3rd depletion mode fet (Q3), first variable resistor element (101), the second adjustable resistance element (102), first resistance (R1) and second resistance (R2) constitute the guiding path of cascaded structure; wherein
The drain electrode of first depletion mode fet (Q1) links to each other with module input, and grid links to each other with the source electrode of second depletion mode fet (Q2);
The drain electrode of second depletion mode fet (Q2) links to each other with the module output, and grid links to each other with the source electrode of first depletion mode fet (Q1);
First variable resistor element (101) connects the source electrode of first depletion mode fet (Q1) and the source electrode of the 3rd depletion mode fet (Q3);
The second adjustable resistance element (102) connects the source electrode of second depletion mode fet (Q2) and the drain electrode of the 3rd depletion mode fet (Q3);
The grid of the 3rd depletion mode fet (Q3) links to each other respectively with second resistance (R2) with first resistance (R1), and the other end of first resistance (R1) links to each other with module input, and the other end of second resistance (R2) links to each other with the module output.
2. low on-resistance blocking-up type surge protection device according to claim 1, it is characterized in that: described device of surge protector also comprises first feedback loop divider (R) that is made of most resistance and second feedback loop divider (R '), wherein, first feedback loop divider (R) is parallel between the drain electrode of the source electrode of first depletion mode fet (Q1) and the 3rd depletion mode fet (Q3), and the intermediate node of first feedback loop divider (R) links to each other with the grid of first depletion mode fet (Q1); Second feedback loop divider (R ') is parallel between the source electrode of the source electrode of second depletion mode fet (Q2) and the 3rd depletion mode fet (Q3), and the intermediate node of second feedback loop divider (R ') links to each other with the grid of second depletion mode fet.
3. low on-resistance blocking-up type surge protection device according to claim 2, it is characterized in that: first feedback loop divider is made of the 4th resistance (R4) and the 5th resistance (R5) series connection, is the intermediate node of first feedback loop divider (R) between the 4th resistance (R4) and the 5th resistance (R5); Second feedback loop divider is made of the 6th resistance (R6) and the 7th resistance (R7), is the intermediate node of second feedback loop divider (R ') between the 6th resistance (R6) and the 7th resistance (R7).
4. low on-resistance blocking-up type surge protection device according to claim 1 and 2; it is characterized in that: described first variable resistor element and the second adjustable resistance element are the depletion mode fet of grid and drain electrode short circuit, and described depletion mode fet is depletion type N slot field-effect transistor or depletion type P channeling effect transistor.
5. low on-resistance blocking-up type surge protection device according to claim 4 is characterized in that: described grid is a kind of in mos field effect transistor, junction field effect transistor and the electrostatic induction field-effect transistor with the depletion mode fet of drain electrode short circuit.
6. low on-resistance blocking-up type surge protection device according to claim 1 and 2; it is characterized in that: a kind of in mos field effect transistor, junction field effect transistor and the electrostatic induction field-effect transistor of described first depletion mode fet (Q1) and second depletion mode fet (Q2); and the conducting channel type is identical, and with the conducting channel type opposite of the 3rd depletion mode fet (Q3).
7. low on-resistance blocking-up type surge protection device according to claim 6 is characterized in that: described first depletion mode fet (Q1) and second depletion mode fet (Q2) are mos field effect transistor.
8. low on-resistance blocking-up type surge protection device according to claim 6 is characterized in that: described the 3rd depletion mode fet is a junction field effect transistor.
9. low on-resistance blocking-up type surge protection device according to claim 6 is characterized in that:
Described first depletion mode fet (Q1) and second depletion mode fet (Q2) are the depletion type n channel metal oxide semiconductor field effect transistor, and described the 3rd depletion mode fet (Q3) is a depletion type P channel junction field-effect transistors; Perhaps,
Described first depletion mode fet (Q1) and second depletion mode fet (Q2) are depletion type P-channel metal-oxide-semiconductor field-effect transistor, and described the 3rd depletion mode fet (Q3) is a depletion type N channel junction field-effect transistors.
10. low on-resistance blocking-up type surge protection device according to claim 6; it is characterized in that: described first depletion mode fet (Q1) and second depletion mode fet (Q2) are high pressure depletion type n channel metal oxide semiconductor field effect transistor, and the 3rd depletion mode fet (Q3) is a depletion type P channel junction field-effect transistors.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7221551B2 (en) * | 2004-06-11 | 2007-05-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cascaded gate-driven ESD clamp |
| CN101702508A (en) * | 2009-11-19 | 2010-05-05 | 上海长园维安微电子有限公司 | Two-way blocking-up type surge protection device |
| US20100277847A1 (en) * | 2009-05-04 | 2010-11-04 | Xueqing Li | Solid-State Disconnect Device |
-
2011
- 2011-03-11 CN CN2011100586847A patent/CN102074929A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7221551B2 (en) * | 2004-06-11 | 2007-05-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cascaded gate-driven ESD clamp |
| US20100277847A1 (en) * | 2009-05-04 | 2010-11-04 | Xueqing Li | Solid-State Disconnect Device |
| CN101702508A (en) * | 2009-11-19 | 2010-05-05 | 上海长园维安微电子有限公司 | Two-way blocking-up type surge protection device |
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Application publication date: 20110525 |