CN102065628A - Technology for accurately measuring half-unit cavity frequency of dumbbell cavity - Google Patents
Technology for accurately measuring half-unit cavity frequency of dumbbell cavity Download PDFInfo
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- CN102065628A CN102065628A CN 201110023845 CN201110023845A CN102065628A CN 102065628 A CN102065628 A CN 102065628A CN 201110023845 CN201110023845 CN 201110023845 CN 201110023845 A CN201110023845 A CN 201110023845A CN 102065628 A CN102065628 A CN 102065628A
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Abstract
The invention relates to a technology for accurately measuring a half-unit cavity frequency of a dumbbell cavity, which comprises the following steps of: measuring the frequencies of a TM010pi module and a pi/2 module of the dumbbell cavity by adopting the traditional method; respectively measuring the frequencies of perturbation TM010pi modules and pi/2 modules of two half unit cavities of the dumbbell cavity by adopting the traditional method; and respectively calculating the frequencies of the TM010 modules of the two half unit cavities of the dumbbell cavity, if the obtained frequencies of the TM010 modules of the two half unit cavities are not equal to the designed values, modulating the frequencies of the two half unit cavities by adopting the traditional method, then measuring the frequencies of the modulated dumbbell cavities, calculating the frequencies of the TM010 modules of the two half unit cavities, repeating the process until the obtained frequencies of the TM010pi modules of the two half unit cavities are equal to the designed value, thereby accomplishing the modulation of the dumbbell cavity. The measurement technology is simple and can accurately measure the frequencies of the TM010pi modules of the two half unit cavities.
Description
Technical field
The present invention relates to a kind of superconduction charged particle accelerator superconduction radio-frequency cavity manufacturing technology, be specifically related to the accurate measuring technique of half-cell chamber, a kind of dumbbell chamber frequency.
Background technology
At present, the superconduction radio-frequency cavity is widely used in the various charged particle accelerators as the core acceleration components of charged particle accelerator of new generation.The manufacturing process flow of oval superconduction radio-frequency cavity is: 1) punching press produces the half-cell chamber; 2) electron beam welding produces the dumbbell chamber; 3) electron beam welding edge fit half-cell chamber and beam tube etc. produce chamber, limit group; 4) electron beam welding dumbbell chamber and chamber, limit group produce multiple unit superconduction elliptic cavity.Go on foot in the manufacturing process second, when producing the dumbbell chamber,, can cause the distortion of two and half chambeies because electron beam welding is shunk.In order to correct welding contraction distortion, need modulate the half-cell chamber in dumbbell chamber.So-called modulation is adjusted to design frequency with half-cell chamber, dumbbell chamber frequency exactly.And how accurately to measure half-cell chamber, dumbbell chamber frequency in the modulation is key technology.
The measuring technique of traditional half-cell chamber, dumbbell chamber frequency is to utilize periodic circuit principle and perturbation theory, obtains half-cell chamber, dumbbell chamber frequency by measuring dumbbell chamber frequency change and loaded down with trivial details calculating.The shortcoming of this method is the measuring process complexity, calculates loaded down with trivial detailsly, and measuring accuracy is poor.
Summary of the invention
The purpose of this invention is to provide a kind of accurate measuring technique that calculates half-cell chamber, the dumbbell chamber frequency easy, that measuring accuracy is high of measuring, solved problems of the prior art.
The technical solution adopted in the present invention is, the accurate measuring technique of half-cell chamber, dumbbell chamber frequency specifically carries out according to the following steps:
Step 1: adopt existing method to measure the frequency of dumbbell to be measured chamber TM010 π mould
f πFrequency with the pi/2 mould
f Pi/2
Step 2: adopt existing method to measure the frequency of the half-cell chamber perturbation in dumbbell to be measured chamber TM010 π mould
f P, l, πFrequency with perturbation pi/2 mould
f P, l, pi/2,
Adopt existing method to measure the frequency of another half-cell chamber perturbation of dumbbell to be measured chamber TM010 π mould
f P, r, πFrequency with perturbation pi/2 mould
f P, r, pi/2
Step 3: utilize following formula to calculate the frequency of two half-cell chambeies, dumbbell to be measured chamber TM010 mould
f L, πWith
f R, π:
In the formula,
f πThe frequency of the TM010 π mould that expression step 1 records;
f Pi/2The frequency of the pi/2 mould that expression step 1 records;
f P, l, πWith
f P, l, pi/2Represent the frequency of the unit chamber perturbation TM010 π mould that step 2 records and the frequency of perturbation pi/2 mould respectively;
f P, r, πWith
f P, r, pi/2Represent the frequency of another chamber, unit perturbation TM010 π mould that step 2 records and the frequency of perturbation pi/2 mould respectively;
Step 4: if the frequency of two half-cell chamber TM010 moulds that step 3 calculates
f L, πWith
f R, πBe not equal to design load, then adopt existing method that the frequency in two half-cell chambeies is modulated, then, measure the frequency of dumbbell to be measured chamber, modulation back TM010 π mould according to the method for step 1
f πFrequency with the pi/2 mould
f Pi/2, measure the frequency of modulating back dumbbell to be measured chamber two unit chamber perturbation TM010 π mould according to the method for step 2
f P, l, πWith
f P, l, πAnd the frequency of two unit chamber perturbation pi/2 mould
f P, l, pi/2With
f P, l, pi/2The formula of each frequency values substitution step 3 in dumbbell chamber calculates after the modulation that will record again, obtain calculated value, this calculated value and design load are compared, the result who obtains according to comparison modulates the dumbbell chamber again, repeat said process, until the frequency of two half-cell chamber TM010 moulds that calculate
f L, πWith
f R, πEqual design load, finish the modulation in dumbbell chamber.
Measuring technique of the present invention can simply, accurately record the frequency of two half-cell chambeies, dumbbell chamber TM010 mould; Certainty of measurement has improved 4 times than conventional measurement techniques.
Description of drawings
Fig. 1 is a schematic diagram of measuring dumbbell chamber frequency in the measuring technique of the present invention.
Fig. 2 is a schematic diagram of measuring a left side, dumbbell chamber perturbation frequency in the measuring technique of the present invention.
Fig. 3 is a schematic diagram of measuring the right perturbation frequency in dumbbell chamber in the measuring technique of the present invention.
Fig. 4 is the schematic diagram that increases half-cell chamber frequency in the measuring technique of the present invention.
Fig. 5 is the schematic diagram that reduces half-cell chamber frequency in the measuring technique of the present invention.
Among the figure: 1. dumbbell chamber, 2. measuring probe, 3. network analyzer, 4. short circuit metallic plate, 5. perturbation head, 6. left half-cell chamber, 7. right half-cell chamber, 8. modulation support, 9. platen, 10. adaptation board, 11. power screws.
Embodiment
The present invention is described in detail below in conjunction with the drawings and specific embodiments.
According to little diffraction by aperture and perturbation theory, the invention provides the measuring technique of half-cell chamber, a kind of easy measurement dumbbell chamber frequency, this measuring technique has overcome the shortcoming of conventional measurement techniques, has the advantage that measuring process is simple, calculating is simple, measuring accuracy is very high.
Measuring technique of the present invention, specifically carry out according to the following steps:
Step 1: adopt existing method to measure the frequency of the TM010 π mould in dumbbell to be measured chamber
f πFrequency with the pi/2 mould
f Pi/2As shown in Figure 1, dumbbell to be measured chamber 1 is placed between the two short circuit metallic plates 3 that be arranged in parallel, and two short circuit metallic plates 3 are contacted with the two ends in dumbbell chamber 1, two measuring probes 2 are installed on respectively on two short circuit metallic plates 3, the head of measuring probe 2 stretches in the dumbbell chamber 1, and measuring probe 2 is connected with network analyzer 4, measures the frequency in dumbbell to be measured chamber 1;
Step 2: adopt existing method to measure the frequency of the TM010 π mould of dumbbell to be measured chamber left side perturbation
f P, l, πFrequency with the pi/2 mould
f P, l, pi/2, as shown in Figure 2, with 1 left half-cell chamber, dumbbell chamber, 6 contacted short circuit metallic plates 3 on perturbation 5 is installed, perturbation 5 head are stretched in the left half-cell chamber 6, measure the left perturbation frequency in dumbbell chamber 1;
Adopt existing method to measure the frequency of the TM010 π mould of the right perturbation in dumbbell to be measured chamber
f P, r, πFrequency with the pi/2 mould
f P, r, pi/2, as shown in Figure 3, with 1 right half-cell chamber, dumbbell chamber, 7 contacted short circuit metallic plates 3 on perturbation 5 is installed, perturbation 5 head are stretched in the right half-cell chamber 7, measure the right perturbation frequency in dumbbell chamber 1;
Step 3: utilize following formula to calculate the frequency of two half-cell chambeies, dumbbell to be measured chamber TM010 mould
f L, πWith
f R, π:
In the formula,
f πThe frequency of the TM010 π mould that expression step 1 records;
f Pi/2The frequency of the pi/2 mould that expression step 1 records;
f P, l, πThe frequency of the TM010 π mould of the left perturbation that expression step 2 records;
f P, l, pi/2The frequency of the pi/2 mould of the left perturbation that expression step 2 records;
f P, r, πThe frequency of the TM010 π mould of the right perturbation that expression step 2 records;
f P, r, pi/2The frequency of the pi/2 mould of the right perturbation that expression step 2 records;
Step 4: if the frequency of two half-cell chamber TM010 moulds that step 3 calculates
f L, πWith
f R, πBe not equal to design load, then the frequency in two half-cell chambeies adjusted:
Frequency when two half-cell chamber TM010 moulds that calculate
f L, πWith
f R, πDuring less than design load, need modulation to increase the frequency of two half-cell chamber TM010 moulds, adopt existing method to modulate; The working face of modulation support 8 is placed between 1 two half-cell chambeies, dumbbell chamber, adaptation board 10 and platen 9 are sleeved on the screw rod of power screw 11 successively, adaptation board 10 is contacted with dumbbell chamber 1, as shown in Figure 4, tighten the nut of power screw 11, this nut moves along screw rod, promoting adaptation board 10 moves, 10 pairs of dumbbell chambeies of adaptation board 1 produce pressure F, under the effect of this pressure F, 8 pairs of dumbbell chambeies of modulation support 1 produce and the opposite pressure-F of pressure F direction, by pressure F and pressure-F dumbbell chamber 1 are modulated.
Frequency when two half-cell chamber TM010 moulds that calculate
f L, πWith
f R, πDuring greater than design load, need modulation to reduce the frequency of two half-cell chamber TM010 moulds, adopt existing method to modulate; An end face in dumbbell chamber 1 is placed on the working face of modulation support 8, adaptation board 10 and platen 9 are sleeved on the screw rod of power screw 11 successively, adaptation board 10 is contacted with dumbbell chamber 1, as shown in Figure 5, tighten the nut of power screw 11, this nut moves along screw rod, promoting adaptation board 10 moves, 10 pairs of dumbbell chambeies of adaptation board 1 produce pressure F, under the effect of this pressure F, 8 pairs of dumbbell chambeies of modulation support 1 produce and the opposite pressure-F of pressure F direction, by pressure F and pressure-F dumbbell chamber 1 are modulated.
Measure the frequency of the TM010 π mould in dumbbell to be measured chamber, modulation back according to the method for step 1
f πFrequency with the pi/2 mould
f Pi/2, according to the frequency of the TM010 π mould of dumbbell to be measured chamber left side perturbation after the method measurement modulation of step 2
f P, l, π, the pi/2 mould frequency
f P, l, pi/2And the frequency of the TM010 π mould of the right perturbation in dumbbell to be measured chamber
f P, l, π, the pi/2 mould frequency
f P, l, pi/2The formula of each frequency values substitution step 3 in dumbbell chamber calculates after the modulation that will record again, obtain calculated value, this calculated value and design load are compared, the result who obtains according to comparison modulates dumbbell chamber 1 again, repeat said process, until the frequency of two half-cell chamber TM010 π moulds that calculate
f L, πWith
f R, πEqual design load, finish the modulation in dumbbell chamber 1.
Measuring technique of the present invention only relates to the frequency in half-cell chamber, and we just can ignore the wall loss of resonant cavity here.Because the coupling aperture in dumbbell chamber can be used the aperture diffraction theory less than the wavelength of TM010 mould.If differing, the frequency in two half-cell chambeies, dumbbell chamber not very big, promptly
f L, π-
f R, π＜0.03 *
f 0, πThe time, can think
f L, π≈
f R, π≈
f 0, π(
f 0, πFrequency for the TM010 π mould in dumbbell chamber), the field intensity of two half-cell chambeies, dumbbell chamber TM010 π mould and frequency can be represented with two harmless coupled resonance submodels so:
In the formula,
kIt is the coupling coefficient in two two half-cell chambeies.These two half-cell chambeies can be electric coupling, also can be magnetic coupling, perhaps hybrid coupled.
In actual the manufacturing, the frequency basically identical of preceding TM010 π mould is welded in two half-cell chambeies that constitute the dumbbell chamber, and after the welding, the frequency of the TM010 π mould in two half-cell chambeies can not differ greatly usually, and this is to use the basis of reality of equation (1).
E l With
E r The electric field strength of the TM010 mould in two half-cell chambeies about being respectively, under stable state, this electric field strength can be expressed as:
In the formula,
fBe the frequency of TM010 π or the frequency of pi/2 mould;
E 0lWith
E 0rBe respectively
E lWith
E rAmplitude.
With (2) formula substitution (1) formula:
By (3) Shi Kede:
（4）
Further can get the frequency of TM010 mould:
（5）
In conjunction with (3) formula and (5) formula:
From (6) formula as can be seen:
E 0r, π/
E 0l, π0,
E 0r, pi/2/
E 0l, pi/2＜0, mean mould for TM010 π, electric field and two short board normals are simultaneously in the same way or simultaneously oppositely; And for TM010 pi/2 mould, always another is reverse in the same way with one of two short board normal for electric field.
Because the perturbation head is very close to the chamber axle, for the characteristic and Si Laite (Slater) perturbation theory of TM010 mould, the frequency change in dumbbell chamber can by (
f 0 2-
f 2)=1.5
E 0 2 ε 0 2 V/
UObtain (here
f 0With
E 0Be respectively that the dumbbell chamber does not have the preceding TM010 π of perturbation or the frequency and the electric field strength of pi/2 mould;
fIt is the frequency after the perturbation;
VIt is the volume of perturbation head;
UBe the electromagnetic field energy storage before the perturbation of dumbbell chamber).Because
E 0r, π/
E 0l, π0 He
E 0r, pi/2/
E 0l, pi/2＜0, then obtain:
Association type (5), formula (6) and formula (7) obtain the frequency in each half-cell chamber, dumbbell chamber:
Embodiment
For accuracy and the accuracy of verifying measuring technique of the present invention, carry out simplation verification with computer.Concrete grammar is:
1) build two half-cell chambeies with CST microwave studio (CST Microwave Studio) program, the frequency of the TM010 π mould in these two half-cell chambeies is respectively 696.721 MHz and 698.041 MHz;
2) with synthetic dumbbell chamber, above-mentioned two half-cell chambeies, the frequency of the TM010 π mould of its analog computation is 697.422 MHz, and the frequency of TM010 pi/2 mould is 687.463 MHz;
3) in synthetic dumbbell chamber, add the perturbation head, its perturbation frequency is carried out analog computation, the results are shown in Table 1;
4) with step 2) and step 3) in the frequency values that obtains bring the formula in the technology of the present invention and the computing formula of existing method respectively into, obtain result of calculation as shown in table 2;
Table 2 shows that the precision that adopts the technology of the present invention to calculate two half-cell chamber frequencies is higher than the precision that adopts the method for having now to calculate half-cell chamber frequency.And the computational methods of present technique are simple.
Claims (1)
1. the accurate measuring technique of dumbbell chamber half-cell chamber frequency is characterized in that, this measuring technique is specifically carried out according to the following steps:
Step 1: adopt existing method to measure the frequency of dumbbell to be measured chamber TM010 π mould
f πFrequency with the pi/2 mould
f Pi/2
Step 2: adopt existing method to measure the frequency of the half-cell chamber perturbation in dumbbell to be measured chamber TM010 π mould
f P, l, πFrequency with perturbation pi/2 mould
f P, l, pi/2,
Adopt existing method to measure the frequency of another half-cell chamber perturbation of dumbbell to be measured chamber TM010 π mould
f P, r, πFrequency with perturbation pi/2 mould
f P, r, pi/2
Step 3: utilize following formula to calculate the frequency of two half-cell chambeies, dumbbell to be measured chamber TM010 mould
f L, πWith
f R, π:
In the formula,
f πThe frequency of the TM010 π mould that expression step 1 records;
f Pi/2The frequency of the pi/2 mould that expression step 1 records;
f P, l, πWith
f P, l, pi/2Represent the frequency of the unit chamber perturbation TM010 π mould that step 2 records and the frequency of perturbation pi/2 mould respectively;
f P, r, πWith
f P, r, pi/2Represent the frequency of another chamber, unit perturbation TM010 π mould that step 2 records and the frequency of perturbation pi/2 mould respectively;
Step 4: if the frequency of two half-cell chamber TM010 moulds that step 3 calculates
f L, πWith
f R, πBe not equal to design load, then adopt existing method that the frequency in two half-cell chambeies is modulated, then, measure the frequency of dumbbell to be measured chamber, modulation back TM010 π mould according to the method for step 1
f πFrequency with the pi/2 mould
f Pi/2, measure the frequency of modulating back dumbbell to be measured chamber two unit chamber perturbation TM010 π mould according to the method for step 2
f P, l, πWith
f P, l, πAnd the frequency of two unit chamber perturbation pi/2 mould
f P, l, pi/2With
f P, l, pi/2The formula of each frequency values substitution step 3 in dumbbell chamber calculates after the modulation that will record again, obtain calculated value, this calculated value and design load are compared, the result who obtains according to comparison modulates the dumbbell chamber again, repeat said process, until the frequency of two half-cell chamber TM010 moulds that calculate
f L, πWith
f R, πEqual design load, finish the modulation in dumbbell chamber.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108449860A (en) * | 2018-03-05 | 2018-08-24 | 中国科学院高能物理研究所 | A kind of low temperature inserted link tuner and superconductor cavity |
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| CN1767718A (en) * | 2005-11-11 | 2006-05-03 | 赵夔 | Large crystal grain niobium material superconducting cavity and its manufacturing method |
| US20070275860A1 (en) * | 2005-04-12 | 2007-11-29 | Katsuya Sennyu | Method for Producing Superconducting Acceleration Cavity |
| WO2010016337A1 (en) * | 2008-08-07 | 2010-02-11 | 大学共同利用機関法人高エネルギー加速器研究機構 | Method for producing superconducting radio-frequency acceleration cavity |
| CN101707850A (en) * | 2009-11-06 | 2010-05-12 | 北京大学 | Radio frequency superconducting cavity with slit waveguide structure for superconducting accelerator |
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2011
- 2011-01-21 CN CN 201110023845 patent/CN102065628A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070275860A1 (en) * | 2005-04-12 | 2007-11-29 | Katsuya Sennyu | Method for Producing Superconducting Acceleration Cavity |
| CN1767718A (en) * | 2005-11-11 | 2006-05-03 | 赵夔 | Large crystal grain niobium material superconducting cavity and its manufacturing method |
| WO2010016337A1 (en) * | 2008-08-07 | 2010-02-11 | 大学共同利用機関法人高エネルギー加速器研究機構 | Method for producing superconducting radio-frequency acceleration cavity |
| CN101707850A (en) * | 2009-11-06 | 2010-05-12 | 北京大学 | Radio frequency superconducting cavity with slit waveguide structure for superconducting accelerator |
Non-Patent Citations (2)
| Title |
|---|
| 《IEEE Transactions on Applied Superconductivity》 20050630 Terry L. Grimm et al. New directions in superconducting radio frequency cavities for accelerators 2393-2396 1 第15卷, 第2期 2 * |
| 《Review of Scientific Instruments》 20081007 Sun An et al. A method to measure the frequencies of individual half cells in a dumbbell cavity 104701-1~104701-5 1 第79卷, 2 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108449860A (en) * | 2018-03-05 | 2018-08-24 | 中国科学院高能物理研究所 | A kind of low temperature inserted link tuner and superconductor cavity |
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Application publication date: 20110518 |