CN102064468A - Low-voltage self-adaptive optical communication laser driver circuit - Google Patents
Low-voltage self-adaptive optical communication laser driver circuit Download PDFInfo
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- CN102064468A CN102064468A CN 201010587877 CN201010587877A CN102064468A CN 102064468 A CN102064468 A CN 102064468A CN 201010587877 CN201010587877 CN 201010587877 CN 201010587877 A CN201010587877 A CN 201010587877A CN 102064468 A CN102064468 A CN 102064468A
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Abstract
The invention relates to a low-voltage self-adaptive optical communication laser driver circuit which comprises a differential modulating current amplifier A1, a differential voltage follower A2 and a differential modulating current driver A3 connected in sequence, wherein the differential modulated current amplifier A1 is used for amplifying an input modulating current signal Din and is matched with the impedance and the level of the later stage; the differential voltage follower A2 is used for amplifying the input modulating current signal processed by the differential modulating current amplifier A1 and is matched with the impedance and the level of the later stage; the differential modulating current driver A3 is used for outputting a modulating current signal Dout, and the modulating current signal Dout is used for driving a laser diode; and a modulating current control circuit is used for adjusting the modulating current of the differential modulating current amplifier A1. The laser driver circuit provided by the invention can work under the condition of very low power supply voltage; the working speed of the driver circuit is increased; and the magnitude of the driver stage drive current can be autonomously adjusted.
Description
Technical field
The present invention relates to the laser modulation current output driving circuit in laser communication field, is a kind of low-voltage adaptive optical communication laser driver circuit specifically.
Background technology
Laser driver is as the indispensable part of optical communication system, various aspects such as be widely used in synchronous digital multiple connection, Fast Ethernet, Fiber to the home, and become numerous lot of domestic and foreign scholars' research field.
Optical communication system has multinomial requirement to laser driver, mainly comprises input signal amplitude, exports many aspects such as rising/fall time, laser power control, bias current and modulated current control, temperature-compensating, inefficacy monitoring.
The existing laser driver typical case modulated current drive circuit that is used for optical communication as shown in Figure 1.Transistor Q5 and Q6 constitute first order amplitude limit differential amplifier.Like this, as long as the amplitude of input signal within the scope of design, will be fixed the modulation signal of amplitude on resistance R 4 and R5.Penetrate the effect that grade follower plays the DC level displacement by what transistor Q3 and Q4 constituted, with the requirement of the common mode incoming level of coupling next stage circuit.The second level amplitude limit differential amplifier that transistor Q7 and Q8 constitute is mainly used in signal shaping, drives simultaneously by what transistor Q9 and Q10 constituted and penetrates a grade follower.Transistor Q1 and Q2 constitute differential power output stage, drive laser (Laser).Transistor M1-M7 provides biasing for amplifying circuits at different levels, and wherein, the grid step voltage that changes M1 can be controlled the size of laser modulation current.
Yet typical circuit shown in Figure 1 has the place that is suitable for inadequately in the occasion of high speed and low voltage power supply.On the one hand, penetrate grade follower and can present the characteristic of inductance, reduced its high-frequency transmission characteristic to a great extent in high-frequency occasion by what transistor Q3 and Q4 constituted.On the other hand, driving laser diode again after transistor M1 and Q1 and the Q2 series connection makes that the power supply supply power voltage can not be too low, must guarantee that at least two transistors add laser diode, the powered operation interval after these three devices series connection.So when occurring hanging down the application of power supply supply power voltage, laser driver can't operate as normal.
Summary of the invention
At the defective that exists in the prior art, the object of the present invention is to provide a kind of low-voltage adaptive optical communication laser driver circuit, when using to solve low power supply supply power voltage, the problem that laser driver can't operate as normal.
For reaching above purpose, the technical scheme that the present invention takes is:
A kind of low-voltage adaptive optical communication laser driver circuit is characterized in that comprising:
The differential modulation current amplifier A1 of Lian Jieing, differential voltage follower A2, differential modulation current driver A3 successively, wherein,
Differential modulation current amplifier A1 is used for amplifying input modulated current signal Din, and is complementary with impedance and the level of differential voltage follower A2;
Differential voltage follower A2 is used to amplify the input modulated current signal after differential modulation current amplifier A1 handles, and is complementary with impedance and the level of differential modulation current driver A3;
Differential modulation current driver A3 is used to export modulated current signal Dout, and modulated current signal Dout is used for the driving laser diode;
Modulated current control circuit M1 is used to control the modulated current of differential modulation current amplifier A1.
On the basis of technique scheme, described differential modulation current amplifier A1 comprises transistor Q1, Q2, Q7, Q8, Q11, resistance R 1-R5; Described differential voltage follower A2 comprises transistor Q3, Q4, Q9, Q10; Described differential modulation current driver A3 comprises transistor Q5, Q6; Modulated current control circuit M1 is a transistor.
On the basis of technique scheme, modulation signal input Din links to each other with differential pair tube Q1 that equates and the base stage of Q2; The emitting stage of Q1 and Q2 links to each other with the collector electrode of transistor Q8; The collector electrode of Q1 and Q2 links to each other with the end of resistance R 4 that equates and R5 and equal transistor Q4 and the base stage of Q3 respectively;
The other end of resistance R 4 and R5 links to each other with R3 with the resistance R 2 that equates respectively; The other end of resistance R 2 and R3 links to each other with an end of resistance R 1 and the leakage level of transistor M1;
The source class of transistor M1 meets power vd D, and grid meets modulated current control signal input Ctrl;
The base stage of transistor Q7-Q10 all connects together, and links to each other with the collector electrode of Q7 and the emitter of Q11;
The collector electrode of transistor Q11 all links to each other with the other end of resistance R 1 with base stage;
Transistor Q9 that equates and the collector electrode of Q10 link to each other with the emitter of transistor Q3 and Q4 and equal transistor Q5 and the base stage of Q6 respectively;
The collector electrode of transistor Q3 and Q4 meets power vd D;
The collector electrode of transistor Q5 and Q6 is as the differential output signal of modulated current, and the negative pole with resistance R 6, laser diode D1 links to each other respectively; The other end of resistance R 6 is connected with the positive pole of laser diode D1 with power vd D;
The grounded emitter VSS of transistor Q5-Q10.
On the basis of technique scheme, the emitting stage area of establishing transistor Q7 and Q8 is respectively S7 and S8, and then the value of the emitting stage area S7 of resistance R 1-R3 and transistor Q7 and Q8 and S8 satisfies following proportionate relationship:
R1/S7＝S8/R2，
The span of resistance R 4 and R5 resistance R 2 1/2 to 1/10 between.
Low-voltage adaptive optical communication laser driver circuit of the present invention has the following advantages:
1, can work under very low supply voltage condition of power supply, operating voltage only need satisfy the voltage power supply interval after the series connection of single driving transistors and laser diode.
2, can avoid the influence of the inductance characteristic of typical modulated current drive circuit, improve the operating rate of drive circuit.
3, the difference of output current as requested promotes the size of the drive current of level from main regulation, to play the effect that reduces overall power consumption.
Description of drawings
The present invention has following accompanying drawing:
Fig. 1 is used for the laser driver typical case modulated current drive circuit of optical communication;
Fig. 2 system block diagram of the present invention;
Fig. 3 specific implementation of the present invention;
Fig. 4 circuit simulation result of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further detail.
The invention provides a kind of low-voltage adaptive optical communication laser driver modulated current output circuit, be used in the High Speed Modulation electric current output under the low suppling voltage condition of work, to drive optical communication laser/laser diode.Fig. 2 is a system block diagram of the present invention, and it comprises:
A differential modulation current amplifier A1 is used for amplifying input modulated current signal Din, and with afterwards the impedance and the level of level (differential voltage follower A2) are complementary;
A differential voltage follower A2, the back level as differential modulation current amplifier A1 is used to amplify the input modulated current signal after differential modulation current amplifier A1 handles, and with afterwards the impedance and the level of level (differential modulation current driver A3) are complementary;
A differential modulation current driver A3, the back level as differential voltage follower A2 is used to export modulated current signal Dout, and modulated current signal Dout is used for the driving laser diode;
A modulated current control circuit M1, modulated current control circuit M1 are used to control the size of the modulated current of differential modulation current amplifier A1;
Differential modulation current amplifier A1, differential voltage follower A2, differential modulation current driver A3 connect successively.
Fig. 3 is a concrete circuit diagram of implementing of the present invention.Wherein, transistor Q1, Q2, Q7, Q8, Q11, resistance R 1-R5 form differential modulation current amplifier A1; Transistor Q3, Q4, Q9, Q10 form differential voltage follower A2; Transistor Q5 and Q6 form differential modulation current driver A3; Modulated current control circuit M1 is a transistor.All transistors and resistance adopt integrated device, and its concrete annexation is:
Modulation signal input Din links to each other with differential pair tube Q1 that equates and the base stage of Q2; The emitting stage of Q1 and Q2 links to each other with the collector electrode of transistor Q8; The collector electrode of Q1 and Q2 links to each other with the end of resistance R 4 that equates and R5 and equal transistor Q4 and the base stage of Q3 respectively;
The other end of resistance R 4 and R5 links to each other with R3 with the resistance R 2 that equates respectively; The other end of resistance R 2 and R3 links to each other with an end of resistance R 1 and the leakage level of transistor M1;
The source class of transistor M1 meets power vd D, and grid meets modulated current control signal input Ctrl;
The base stage of Q7-Q10 all connects together, and links to each other with the collector electrode of Q7 and the emitter of Q11;
The collector electrode of transistor Q11 all links to each other with the other end of resistance R 1 with base stage;
Transistor Q9 that equates and the collector electrode of Q10 link to each other with the emitter of transistor Q3 and Q4 and equal transistor Q5 and the base stage of Q6 respectively;
The collector electrode of transistor Q3 and Q4 meets power vd D;
The collector electrode of transistor Q5 and Q6 is as the differential output signal of modulated current, and the negative pole with resistance R 6, laser diode D1 links to each other respectively; The other end of resistance R 6 is connected with the positive pole of laser diode D1 with power vd D;
The grounded emitter VSS of transistor Q5-Q10.
The model that above-mentioned transistor Q1-Q11 adopts can be LN232, and the model that resistance R 1-R5 adopts can be rnp3t-b, and the model that transistor M1 adopts can be pfets.
On the basis of technique scheme, the emitting stage area of establishing transistor Q7 and Q8 is respectively S7 and S8, and then the value of the emitting stage area S7 of resistance R 1-R3 and transistor Q7 and Q8 and S8 satisfies following proportionate relationship:
R1/S7＝S8/R2，
The span of resistance R 4 and R5 resistance R 2 1/2 to 1/10 between.For example, can get R1=10K Ω, S7=2um
2, then R2 can get 1K Ω, and S8 can get 20um
2, R4 and R5 can get 500 Ω.
As shown in Figure 3, modulation signal is loaded into the base stage of difference input pipe Q1 and Q2 among the modulated current amplifier A1 by input Din, and the modulation signal after amplitude limit amplifies is delivered to the base stage of efferent duct Q5 and Q6 by Q3 and Q4.Modulated current is by the collector electrode output of Q5 and Q6.The size of output modulated current is controlled by modulated current control signal input Ctrl, by adjusting the height of modulated current control signal input Ctrl voltage, can adjust the voltage of the drain electrode of transistor M1, thereby change the supply power voltage of the differential modulation current amplifier A1 that comprises Q1 and Q2, cause the size of signal that is delivered to the base stage of Q5 and Q6 by Q3 and Q4, finally change the modulated current of Q5 and Q6 output.
Because the current potential of the drain electrode of M1 is high more, flows through R1, the electric current of Q11 and Q7 can be big more, causes that the power consumption that whole output promotes circuit increases as the electric current increase of the current mirror Q8-Q10 of tail current source, and the modulated current of output also increases; The current potential of the drain electrode of M1 is low more, and is then opposite.Thereby this is an adaptive drive circuit, can adjust the power consumption of self along with the size of output current, plays the effect that reduces overall power.
For the modulated current signal that guarantees to export has enough speed, the service area of output transistor Q5 and Q6 should be from critical opening to the amplification region, thereby base potential can not be hanged down transistor Q5 and Q6 are entered by the district.In order to meet this requirement, the value of resistance R 1-R3 and transistor Q7 and Q8 need be by following rule: the emitting stage area of establishing transistor Q7 and Q8 is respectively S7 and S8, and then the emitting stage area S7 of resistance R 1-R3 and transistor Q7 and Q8 and the value of S8 satisfy R1/S7=S8/R2.So no matter modulated current control signal Ctrl changes and causes the how variation of drain electrode point of M1, when if Q1 works in the switch conduction state, the current collection limit position of Q11 always equates with the lower extreme point position of R2, just equals the b-e junction voltage sum of Q7 and Q11.Thereby the pressure drop of just approximate b-e junction voltage that equals Q7 in transistor Q6 base stage point position and R4 is poor.Carefully choose the value of R4, the control voltage that can make Ctrl end no matter is value how, and the base potential of Q7 makes Q7 be in critical conduction mode all a little less than the cut-in voltage of Q7, guarantees that the zero level of output is enough low, thereby guarantees the extinction ratio of laser output.
With reference to figure 4 are circuit working of the present invention simulation results under the 1.8V low-voltage.As seen when modulated current output reaches about 50mA, and be no more than 1mA all in 90ps rising/fall time the zero point of modulated current, guaranteed the requirement of extinction ratio.
Claims (4)
1. low-voltage adaptive optical communication laser driver circuit is characterized in that comprising:
The differential modulation current amplifier A1 of Lian Jieing, differential voltage follower A2, differential modulation current driver A3 successively, wherein,
Differential modulation current amplifier A1 is used for amplifying input modulated current signal Din, and is complementary with impedance and the level of differential voltage follower A2;
Differential voltage follower A2 is used to amplify the input modulated current signal after differential modulation current amplifier A1 handles, and is complementary with impedance and the level of differential modulation current driver A3;
Differential modulation current driver A3 is used to export modulated current signal Dout, and modulated current signal Dout is used for the driving laser diode;
Modulated current control circuit M1 is used to control the modulated current of differential modulation current amplifier A1.
2. low-voltage adaptive optical communication laser driver circuit as claimed in claim 1, it is characterized in that: described differential modulation current amplifier A1 comprises transistor Q1, Q2, Q7, Q8, Q11, resistance R 1-R5; Described differential voltage follower A2 comprises transistor Q3, Q4, Q9, Q10; Described differential modulation current driver A3 comprises transistor Q5, Q6; Modulated current control circuit M1 is a transistor.
3. low-voltage adaptive optical communication laser driver circuit as claimed in claim 2, it is characterized in that: modulation signal input Din links to each other with differential pair tube Q1 that equates and the base stage of Q2; The emitting stage of Q1 and Q2 links to each other with the collector electrode of transistor Q8; The collector electrode of Q1 and Q2 links to each other with the end of resistance R 4 that equates and R5 and equal transistor Q4 and the base stage of Q3 respectively;
The other end of resistance R 4 and R5 links to each other with R3 with the resistance R 2 that equates respectively; The other end of resistance R 2 and R3 links to each other with an end of resistance R 1 and the leakage level of transistor M1;
The source class of transistor M1 meets power vd D, and grid meets modulated current control signal input Ctrl;
The base stage of transistor Q7-Q10 all connects together, and links to each other with the collector electrode of Q7 and the emitter of Q11;
The collector electrode of transistor Q11 all links to each other with the other end of resistance R 1 with base stage;
Transistor Q9 that equates and the collector electrode of Q10 link to each other with the emitter of transistor Q3 and Q4 and equal transistor Q5 and the base stage of Q6 respectively;
The collector electrode of transistor Q3 and Q4 meets power vd D;
The collector electrode of transistor Q5 and Q6 is as the differential output signal of modulated current, and the negative pole with resistance R 6, laser diode D1 links to each other respectively; The other end of resistance R 6 is connected with the positive pole of laser diode D1 with power vd D;
The grounded emitter VSS of transistor Q5-Q10.
4. low-voltage adaptive optical communication laser driver circuit as claimed in claim 3, it is characterized in that: the emitting stage area of establishing transistor Q7 and Q8 is respectively S7 and S8, and then the value of the emitting stage area S7 of resistance R 1-R3 and transistor Q7 and Q8 and S8 satisfies following proportionate relationship:
R1/S7＝S8/R2，
The span of resistance R 4 and R5 resistance R 2 1/2 to 1/10 between.
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| CN103178441A (en) * | 2013-04-19 | 2013-06-26 | 苏州朗宽电子技术有限公司 | VCSEL (vertical cavity surface emitting laser) drive circuit |
| CN105610404A (en) * | 2015-12-23 | 2016-05-25 | 武汉邮电科学研究院 | Distributed optical driver for realizing high amplitude and high bandwidth output |
| CN106257777A (en) * | 2015-06-22 | 2016-12-28 | 马克西姆综合产品公司 | Driver for high-speed laser diode |
| CN109659811A (en) * | 2018-12-26 | 2019-04-19 | 吉林大学 | A kind of digital impedance self-adaptive laser diode drive |
| CN111916996A (en) * | 2020-08-03 | 2020-11-10 | 厦门亿芯源半导体科技有限公司 | Large modulation current direct current coupling type laser driving circuit |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103178441A (en) * | 2013-04-19 | 2013-06-26 | 苏州朗宽电子技术有限公司 | VCSEL (vertical cavity surface emitting laser) drive circuit |
| CN103178441B (en) * | 2013-04-19 | 2015-07-22 | 苏州朗宽电子技术有限公司 | VCSEL (vertical cavity surface emitting laser) drive circuit |
| CN106257777A (en) * | 2015-06-22 | 2016-12-28 | 马克西姆综合产品公司 | Driver for high-speed laser diode |
| US10971894B2 (en) | 2015-06-22 | 2021-04-06 | Maxim Integrated Products, Inc. | Driver for high speed laser diode |
| CN106257777B (en) * | 2015-06-22 | 2021-10-29 | 马克西姆综合产品公司 | Driver for high speed laser diode |
| US11791607B2 (en) | 2015-06-22 | 2023-10-17 | Maxim Integrated Products, Inc. | Driver for high speed laser diode |
| CN105610404A (en) * | 2015-12-23 | 2016-05-25 | 武汉邮电科学研究院 | Distributed optical driver for realizing high amplitude and high bandwidth output |
| CN105610404B (en) * | 2015-12-23 | 2018-02-16 | 武汉邮电科学研究院 | A kind of distributed CD-ROM driver for realizing high amplitude of oscillation high bandwidth output |
| CN109659811A (en) * | 2018-12-26 | 2019-04-19 | 吉林大学 | A kind of digital impedance self-adaptive laser diode drive |
| CN111916996A (en) * | 2020-08-03 | 2020-11-10 | 厦门亿芯源半导体科技有限公司 | Large modulation current direct current coupling type laser driving circuit |
| CN111916996B (en) * | 2020-08-03 | 2021-09-03 | 厦门亿芯源半导体科技有限公司 | Large modulation current direct current coupling type laser driving circuit |
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