CN102064082B - Diffusion plate structure and manufacturing method thereof - Google Patents
Diffusion plate structure and manufacturing method thereof Download PDFInfo
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- CN102064082B CN102064082B CN200910222774.8A CN200910222774A CN102064082B CN 102064082 B CN102064082 B CN 102064082B CN 200910222774 A CN200910222774 A CN 200910222774A CN 102064082 B CN102064082 B CN 102064082B
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- anger
- bonding coat
- board structure
- giving vent
- diffusion board
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Abstract
The invention relates to a diffusion plate structure and a manufacturing method. The diffusion plate structure comprises a substrate, a plurality of holes and a bonding layer, wherein the plurality of holes are formed in the substrate longitudinally; each hole respectively comprises an air inlet part, an air outlet part and a connecting part used for connecting the air inlet part and the air outlet part; the bonding layer is formed on the side wall of each air outlet part; and the thickness of the bonding layer is between 1 micron and 11 microns. The diffusion plate structure can solve the problem that fine particles are generated periodically after a self-cleaning function is implemented by plasma auxiliary chemical vapor deposition equipment.
Description
[technical field]
The present invention relates to a kind of diffuser plate, relate in particular to a kind of diffusion board structure that can avoid molecule (Particle) the periodicity generation in plasma auxiliary chemical vapor deposition equipment and preparation method thereof.
[background technology]
In the technique of liquid crystal indicator, first must on glass substrate, make a large amount of devices as thin-film transistor (Thin Film Transistor, TFT) etc., refer to shown in accompanying drawing 1, the schematic diagram of glass substrate 10 in plasma auxiliary chemical vapor deposition (Plasma-Enhanced Chemical Vapor Deposition, PECVD) reactor chamber 1.In this plasma auxiliary chemical vapor deposition reactor chamber 1, diffuser plate (Diffuser) 12 is as top electrode, heater (Susceptor) 14 be as bottom electrode, and wherein diffuser plate 12 has a plurality of holes (not shown) and passes through with supplied gas or liquid.Diffuser plate 12 is full of plasma 16 between the two with heater 14.While carrying out chemical vapour deposition (CVD), required reacting gas is imported by gas access 18, gas is after the hole (not shown) of soaking plate 20 and diffuser plate 12, under diffuser plate 12 and the potential difference of heater 14 and the effect of plasma 16, and can on glass substrate 10, film forming make device.Finally, the waste gas after technological reaction is discharged via gas vent 20.
Yet the accessory substance producing at technological reaction, such as silicon nitride, amorphous silicon, polysilicon, silica, boron doped amorphous silicon and phosphorus doping amorphous silicon etc., can be deposited on the sidewall of hole (not shown) of diffuser plate 12, when above-mentioned various accessory substances are not enough to stablize film forming, just can form molecule (Particle) is attached on glass substrate 10 along with reacting gas drops, once the device that molecule is excessive or quantity too much can make to be produced on glass substrate 10 produces defect, causes product function bad.
For addressing the above problem, the existing practice is that plasma assistant chemical vapor deposition reactor chamber 1 is carried out periodic automatically cleaning (Self-Clean), removes the accessory substance of deposition, to promote utilization benefit.So-called periodic self-cleaning function refers to the operation of once removing deposition by-products after every processing specific quantity is as 6 sheet glass substrates, and in practical application, the self-cleaning cycle is generally between 4-10 sheet.
Yet, although periodic self-cleaning function solves the deposition problems of above-mentioned accessory substance, produce also new problem.The hole of diffuser plate 12 (not shown) is to be formed by machining, therefore the roughness of its sidewall is average and careful, chemical vapor deposition method and automatically cleaning carried out after a period of time, it is large that the roughness of hole (not shown) sidewall becomes, and now after automatically cleaning, can make molecule be formed on a certain sheet glass substrate surface of next treatment cycle.The above-mentioned processing 6 sheet glass substrates of take are example, diffuser plate 12 is in new product during the stage, can't there is problem in self-cleaning function, when diffuser plate 12 was used after a period of time, it is large that the roughness of hole (not shown) sidewall becomes, now hypothesis has been passed through N time from cleaning function, in the 6 sheet glass substrates (Clean Count 1 to Clean Count 6) of the N+1 time self-cleaning function pre-treatment, have a certain sheet glass substrate and adhere to a large amount of molecules as the 2nd (Clean Count 2) glass baseplate surface, after its reason is to handle the 1st sheet glass substrate, accessory substance is attached on hole (not shown) sidewall, the accessory substance surface stress (Film Stress) of being accumulated when processing the 2nd sheet glass substrate can cause accessory substance to peel off and form a large amount of molecules and drop and be attached on the 2nd sheet glass substrate.Then, while processing the 3rd sheet glass substrate, the accessory substance more fragile due to surface stress all drops, and therefore the problem of molecule can not occur again for the 3rd sheet glass substrate and glass substrate afterwards thereof.In brief, when the roughness variation of hole (not shown) sidewall of diffuser plate 12 and after self-cleaning function, in subsequent treatment, in the middle of the cycle, can on a certain sheet glass substrate, adhere to a large amount of molecules, be which sheet glass substrate will be depending on technique and the hardware device situation of equipment out of the ordinary actually.
What specify is, because the process conditions of the plasma auxiliary chemical vapor deposition reactor chamber of different vendor are different, may not be certain is to adhere to a large amount of molecules on the 2nd sheet glass substrate after self-cleaning function, also be likely the 3rd or the 4th etc., but the problem of its certainty a large amount of molecules of a certain sheet glass substrate attachment of particular order after each self-cleaning function, that is to say, a large amount of molecules are a certain sheet glass substrates that are periodically created in particular order.Above-mentioned situation is for a long time known by liquid crystal panel industry, however the problem that but cannot effectively solve.Moreover liquid crystal panel manufactured size increases day by day, the size of diffuser plate 12 is as the same, and price is taken the not corner of the eyes, if implement automatically cleaning (Self-Clean) at every turn, changes new product, and cost is inevitable significantly to be improved.
[summary of the invention]
Technical problem to be solved by this invention is, provides a kind of to after the roughness variation of the hole sidewall of above-mentioned diffuser plate and through automatically cleaning and the molecule periodically producing proposes a solution.
In order to address the above problem, the invention provides a kind of diffusion board structure, comprise a base material, a plurality of hole and a bonding coat.Described each hole is longitudinally formed in base material.Each hole comprises that respectively an intake section, gives vent to anger portion and in order to connect intake section and to give vent to anger the connecting portion of portion.Bonding coat is formed on the sidewall of the portion of respectively giving vent to anger, and the thickness of described bonding coat is 1 micron to 11 microns.
The present invention further provides a kind of manufacture method of above-mentioned diffusion board structure, described diffusion board structure comprises a base material and a plurality of hole being longitudinally formed in described base material, each hole comprises that respectively an intake section, gives vent to anger portion and in order to connect intake section and to give vent to anger the connecting portion of portion, and described manufacture method comprises: utilize diffusion board structure described in an acidic chemical solvent clean; And on the sidewall of the portion of respectively giving vent to anger, forming a bonding coat, the thickness of described bonding coat is 1 micron to 11 microns.
The invention has the advantages that, bonding coat acts on the shrinkage stress on surface, gas outlet in the time of reducing the accessory substance film forming of technological reaction, make its automatically cleaning all can be lower than adhesive force in the cycle continual and steady film forming and not peeling off.
[accompanying drawing explanation]
Shown in accompanying drawing 1, be the schematic diagram of glass substrate in plasma auxiliary chemical vapor deposition reactor chamber;
It shown in accompanying drawing 2, is the schematic perspective view of the diffusion board structure drawn according to one embodiment of the invention;
Shown in accompanying drawing 3, be that accompanying drawing 2 is along the profile of line segment AA ';
It shown in accompanying drawing 4, is the flow chart of the manufacture method of diffusion board structure of the present invention.
[embodiment]
Below in conjunction with accompanying drawing, the embodiment of diffusion board structure provided by the invention and preparation method thereof is elaborated.
Please refer to accompanying drawing 2 and accompanying drawing 3, shown in accompanying drawing 2, be the schematic perspective view of the diffusion board structure 200 drawn according to one embodiment of the invention, shown in accompanying drawing 3, be along the profile of line segment AA ' in accompanying drawing 2.Diffusion board structure 200 comprises a base material 210, a plurality of hole 220 and a bonding coat 230.Hole 220 is longitudinally formed in base material 210, runs through the upper and lower surface of base material 210, and each hole 220 comprises respectively an intake section 222, give vent to anger portion 224 and a junction 226, and connecting portion 226 is in order to connect intake section 222 and to give vent to anger portion 224.Bonding coat 230 is formed on the sidewall of the portion of respectively giving vent to anger 224.
The material of base material 210 is metal, for example aluminium, stainless steel or titanium.The diameter of connecting portion 226 is 0.4 millimeter, is less than the diameter of intake section 222 and the diameter of the portion 224 of giving vent to anger, in order to limit gas flow rate (FlowRate).Wherein intake section 222 is as the gas access in plasma auxiliary chemical vapor deposition process as technological reaction, be conical, and narrower place, conical two ends (summit) is connected to connecting portion 226, and the portion 224 of giving vent to anger is as the gas vent in technological reaction process, also be conical, and narrower place, conical two ends (summit) is connected to connecting portion 226, the gas of discharging from the portion of giving vent to anger 224 in course of reaction will enter the space that is full of plasma (label 16 as shown in Figure 1).
The thickness of bonding coat 230 is 1 micron to 11 microns, is preferably 1 micron to 3 microns, if the thickness of bonding coat 230 is greater than 11 microns, can have the function of insulating barrier, is unfavorable for technological reaction.In the present embodiment, bonding coat 230 is further formed on the sidewall of each connecting portion 226 and on the sidewall of each intake section 222.That is to say, bonding coat 230 is formed on the whole sidewall of each hole 220.What specify is, bonding coat 230 can only be formed on the sidewall of the portion of respectively giving vent to anger 224 and not be formed on the sidewall of each connecting portion 226 and on the sidewall of each intake section 222, portion's 224 the most close plasmas (as shown in Figure 1) because respectively give vent to anger, so the required gas of technological reaction is the most violent in the activity of the portion 224 of respectively giving vent to anger, for easily producing molecule part, therefore at least on the sidewall of portion 224 of respectively giving vent to anger, form bonding coat 230, can significantly improve the problem that molecule periodically produces after existing automatically cleaning.
Please refer to accompanying drawing 2 to accompanying drawing 4, the attached flow chart that Figure 4 shows that the manufacture method that diffusion board structure 200 is implemented according to the present invention wherein.Diffusion board structure 200 comprises a base material 210 and a plurality of hole 220 being longitudinally formed in base material 210, each hole 210 comprises that respectively an intake section 222, gives vent to anger portion 224 and in order to connect the connecting portion 226 of intake section 222 and the portion 224 of giving vent to anger, and described manufacture method comprises:
In step S400, utilize an acidic chemical solvent clean diffusion board structure 200, for example, with nitric acid dissolve, clean the dirty of diffusion board structure 200 surface attachment;
In step S410, with the clean diffusion board structure 200 of the water column that pressurizes, thereby remove dissolved dirty; And
In step S420, on the sidewall of portion 224 of respectively giving vent to anger, form a bonding coat 230, for example utilize a sulfuric acid solution to carry out anodization to the portion 224 of respectively giving vent to anger, wherein anodization condition is as follows: sulfuric acid solution concentration is 15% to 25% percentage by weight (Weight Percent, wt.%), sulfuric acid solution temperature is for being-5 ℃ to 20 ℃, the material of supposing base material 210 is aluminium, after anodization, the oxygen molecule of sulfuric acid solution can be combined with aluminium and form aluminium oxide (Al on the sidewall of portion 224 of respectively giving vent to anger
2o
3), bonding coat 230 can be regarded as an oxide layer.By present inventor's repeatedly experiment repeatedly, the thickness of bonding coat 230 be take 1 micron to 11 microns as good, and is preferably between 1 micron to 3 microns, if the thickness of bonding coat 230 is greater than 11 microns, can produce insulation effect, is unfavorable for technological reaction.In addition, also can utilize other suitable chemical reaction mode to form bonding coat 230, this repeats no more.
In above-mentioned steps S420, be further included on the sidewall of each connecting portion 226 and (or) on the sidewall of each intake section 224 and form bonding coat 230.
Take silicon nitride film forming as example, general silicon nitride film forming can form extremely strong shrinkage stress, when its shrinkage stress is greater than the adhesive force of film body and substrate surface, can cause silicon nitride film body to break peels off, become the source of molecule, the present invention forms bonding coat between gas outlet sidewall and silicon nitride film body, thereby while reducing silicon nitride film forming, acts on the shrinkage stress on surface, gas outlet, make its all can be lower than adhesive force in the cycle from cleaning function continual and steady film forming and not peeling off.
As for the different accessory substances of other different process reaction, its film forming mechanism and character and silicon nitride are similar, therefore all can, by the formation of bonding coat, after improving self-cleaning function, periodically produce the problem of a large amount of micro dust particles.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (22)
1. a diffusion board structure, comprising:
One base material;
A plurality of holes, are longitudinally formed in described base material, and each hole comprises respectively:
One intake section;
One portion of giving vent to anger; And
A junction, in order to connect described intake section with described in the portion of giving vent to anger, it is characterized in that, described diffusion board structure also comprises that a bonding coat is formed on the sidewall of the portion of respectively giving vent to anger, the thickness of described bonding coat is 1 micron to 11 microns, through the accessory substance of reaction of the portion of giving vent to anger, when giving vent to anger portion's film forming, be formed in bonding coat surface, thereby prevent that accessory substance film from entering into reaction cavity after cracked.
2. diffusion board structure according to claim 1, is characterized in that, the material of described base material is metal.
3. diffusion board structure according to claim 2, is characterized in that, described metal is aluminium.
4. diffusion board structure according to claim 1, is characterized in that, it is conical that described intake section is, and narrower place, conical two ends is connected to described connecting portion.
5. diffusion board structure according to claim 1, is characterized in that, described in the portion of giving vent to anger be conical, and narrower place, conical two ends is connected to described connecting portion.
6. diffusion board structure according to claim 1, is characterized in that, the thickness of described bonding coat is 1 micron to 3 microns.
7. diffusion board structure according to claim 1, is characterized in that, described bonding coat is an oxide layer.
8. diffusion board structure according to claim 1, is characterized in that, described bonding coat is further formed on the sidewall of each connecting portion.
9. diffusion board structure according to claim 8, is characterized in that, described bonding coat is further formed on the sidewall of each intake section.
10. diffusion board structure according to claim 1, is characterized in that, the diameter of described connecting portion be less than described intake section diameter and described in the give vent to anger diameter of portion.
The manufacture method of 11. 1 kinds of diffusion board structures, described diffusion board structure comprises a base material and a plurality of hole being longitudinally formed in described base material, each hole comprise respectively an intake section, give vent to anger portion and one in order to connect described intake section with described in the give vent to anger connecting portion of portion, it is characterized in that, described manufacture method comprises: utilize diffusion board structure described in an acidic chemical solvent clean; And on the sidewall of the portion of respectively giving vent to anger, form a bonding coat, the thickness of described bonding coat is 1 micron to 11 microns, through the accessory substance of reaction of the portion of giving vent to anger, when giving vent to anger portion's film forming, be formed in bonding coat surface, thereby prevent that accessory substance film from entering into reaction cavity after cracked.
12. manufacture methods according to claim 11, is characterized in that, form the step of described bonding coat on the sidewall of the portion of respectively giving vent to anger before, and the step of the clean described diffusion board structure of water column that further comprises pressurizeing.
13. manufacture methods according to claim 11, is characterized in that, described acidic chemical solution is nitric acid.
14. manufacture methods according to claim 11, is characterized in that, utilize a sulfuric acid solution to carry out anodization to the portion of giving vent to anger respectively, to form described bonding coat on the sidewall in the portion of respectively giving vent to anger.
15. manufacture methods according to claim 14, is characterized in that, described sulfuric acid solution concentration is 15% to 25% percentage by weight.
16. manufacture methods according to claim 14, is characterized in that, the temperature of described sulfuric acid solution is-5 ℃ to 20 ℃.
17. manufacture methods according to claim 11, is characterized in that, the thickness of described bonding coat is 1 micron to 3 microns.
18. manufacture methods according to claim 11, is characterized in that, the material of described base material is metal.
19. manufacture methods according to claim 18, is characterized in that, described metal is aluminium.
20. manufacture methods according to claim 11, is characterized in that, described bonding coat is an oxide layer.
21. manufacture methods according to claim 11, is characterized in that, on the sidewall of the portion of giving vent to anger described in being, form in the step of described bonding coat, are further included in the step that forms described bonding coat on the sidewall of each connecting portion.
22. manufacture methods according to claim 11, is characterized in that, on the sidewall of the portion of giving vent to anger described in being, form in the step of described bonding coat, are further included in the step that forms described bonding coat on the sidewall of each intake section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910222774.8A CN102064082B (en) | 2009-11-13 | 2009-11-13 | Diffusion plate structure and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910222774.8A CN102064082B (en) | 2009-11-13 | 2009-11-13 | Diffusion plate structure and manufacturing method thereof |
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| Publication Number | Publication Date |
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| CN102064082A CN102064082A (en) | 2011-05-18 |
| CN102064082B true CN102064082B (en) | 2014-11-05 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1635190A (en) * | 2003-12-31 | 2005-07-06 | 刘再生 | Novel process for electroplating alumina |
| CN1754008A (en) * | 2003-04-16 | 2006-03-29 | 应用材料股份有限公司 | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
| JP2006186306A (en) * | 2004-09-30 | 2006-07-13 | Toshiba Ceramics Co Ltd | Gas diffusion plate and manufacturing method thereof |
| CN201021459Y (en) * | 2005-04-07 | 2008-02-13 | 应用材料股份有限公司 | Plasm processing room with coverage plate and gas allocation plate component |
| CN101443474A (en) * | 2006-03-23 | 2009-05-27 | 应用材料股份有限公司 | Method and apparatus for improving uniformity of large-area substrates |
-
2009
- 2009-11-13 CN CN200910222774.8A patent/CN102064082B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1754008A (en) * | 2003-04-16 | 2006-03-29 | 应用材料股份有限公司 | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
| CN1635190A (en) * | 2003-12-31 | 2005-07-06 | 刘再生 | Novel process for electroplating alumina |
| JP2006186306A (en) * | 2004-09-30 | 2006-07-13 | Toshiba Ceramics Co Ltd | Gas diffusion plate and manufacturing method thereof |
| CN201021459Y (en) * | 2005-04-07 | 2008-02-13 | 应用材料股份有限公司 | Plasm processing room with coverage plate and gas allocation plate component |
| CN101443474A (en) * | 2006-03-23 | 2009-05-27 | 应用材料股份有限公司 | Method and apparatus for improving uniformity of large-area substrates |
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| Publication number | Publication date |
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| CN102064082A (en) | 2011-05-18 |
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