CN102062312A - Semiconductor luminous structure and semiconductor light source - Google Patents
Semiconductor luminous structure and semiconductor light source Download PDFInfo
- Publication number
- CN102062312A CN102062312A CN2010105279253A CN201010527925A CN102062312A CN 102062312 A CN102062312 A CN 102062312A CN 2010105279253 A CN2010105279253 A CN 2010105279253A CN 201010527925 A CN201010527925 A CN 201010527925A CN 102062312 A CN102062312 A CN 102062312A
- Authority
- CN
- China
- Prior art keywords
- brilliant
- semiconductor light
- colour temperature
- junction
- light sources
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Abstract
The invention provides a semiconductor luminous structure and a semiconductor light source. The semiconductor luminous structure comprises a substrate and multiple PN (positive-negative) crystallization element bodies, wherein a conductive circuit is arranged in the substrate; and the multiple PN crystallization element bodies are mounted on one surface of the substrate, connected with a drive power supply through the conductive circuit and divided into a high-color temperature group and a low-color temperature group. The semiconductor light source comprises a semiconductor luminous structure. Through the semiconductor luminous structure and the semiconductor light source provided by the invention, the heat dissipation effect of the semiconductor luminous structure and the semiconductor light source is improved, and the color temperature change of the semiconductor light source can be effectively adjusted.
Description
Technical field
The present invention relates to field of illuminating device, particularly a kind of semiconductor light emitting structure and semiconductor light sources.
Background technology
Since the bulb invention, electric source lighting has experienced three important development phases, and its representative light source is respectively incandescent lamp, fluorescent lamp and high-intensity gas discharge lamp.Wherein, the incandescent lamp simple installation, but the life-span is short, efficient is low, power consumption is high; Fluorescent lamp can power saving, but has problems such as electromagnetic pollution, service life be short, frangible, and there is mercury pollution in discarded object; High-intensity gas discharge lamp then exists cost height, difficult in maintenance, shortcomings such as efficient is low, power consumption is high, the life-span is short, hazards of electromagnetic radiation.For this reason, people are developing new lighting source always.
Appearance and development of semiconductor along with light emitting diode (LED), semiconductor light sources with its energy-saving and environmental protection, the life-span is long, volume is little etc., and advantage has replaced above several light sources gradually, and be widely used in various lighting fields, become the 4th generation lighting source, claim green light source again.
Semiconductor light sources utilizes the solid semiconductor chip as luminescent material, and compound by the carrier generation in semiconductor, giving off energy causes photon reflection, directly sends versicolor light.The core of semiconductor lighting is a PN junction, has forward conduction, oppositely characteristic such as ends.When PN junction applies forward voltage, when electric current flowed to negative electrode from anode, semiconductor crystal sent the light from ultraviolet to infrared different colours, and light intensity is relevant with size of current, and electric current is big more, and light intensity is high more.
At present, semiconductor light sources all adopts LED packaging body that the brilliant first system of semiconductor PN is equipped with as illuminator, then the LED packaging body is installed in the lighting device in modes such as pasters.And LED packaging technology complexity certainly will increase the manufacturing cost of semiconductor light sources; In addition, the heat dissipation problem of LED is the problem that the LED application is paid close attention to always, and same, semiconductor light sources also has to consider the heat dissipation problem of LED, for this reason, all needs to consider the heat dissipation problem of LED in the paster process of encapsulation and follow-up LED packaging body.
Simultaneously, present all kinds of electric light source products all can't change the colour temperature of light source itself, in case i.e. light source preparation is finished, colour temperature also promptly is fixed up.Can't satisfy human lives and work fully to the requirement of various different-colours under same environment different time.
Summary of the invention
The object of the present invention is to provide a kind of semiconductor light emitting structure and semiconductor light sources,, can't change the problem of colour temperature to solve conventional semiconductor light source heat radiation weak effect.
For solving the problems of the technologies described above, the invention provides a kind of semiconductor light emitting structure, comprising: substrate is provided with the conducting wire in the described substrate; The brilliant first body of a plurality of PN junctions, sheet is shown consideration on a surface of described substrate by the brilliant unit of described a plurality of PN junctions, and is connected with driving power by described conducting wire; Wherein, the brilliant first body of described a plurality of PN junction is divided into high colour temperature group and low colour temperature group.
Optionally, the quantity of the brilliant first body of described PN junction is 2～50.
Optionally, the power of the brilliant first body of described PN junction is 0.05W～1W, and drive current is 50mA～350mA.
Optionally, the brilliant first body of described PN junction comprises: the brilliant first body of brilliant first body of high colour temperature PN junction and low colour temperature PN junction.
Optionally, the colour temperature of the brilliant first body of described high colour temperature PN junction is 4500K～10000K, and the colour temperature of the brilliant first body of described low colour temperature PN junction is 2000K～4500K.
Optionally, described high colour temperature group is by the brilliant first body series connection of described high colour temperature PN junction or be connected in parallel and form.
Optionally, described low colour temperature group is by the brilliant first body series connection of described low colour temperature PN junction or be connected in parallel and form.
Optionally, described substrate is a surface plate, is shaped as square or rectangle or circle.
Optionally, the brilliant first body of described PN junction comprises positive pole and negative pole, has the pad that a plurality of and described conducting wire is connected on the described substrate, and the positive pole and the negative pole of the brilliant first body of described PN junction are electrically connected with a described pad respectively.
The present invention also provides a kind of semiconductor light sources, comprise lamp holder, lamp socket, driving power, radiator structure spare, semiconductor light emitting structure and lampshade, described lamp holder is connected with described lamp socket, described lamp socket is connected with described lampshade, described driving power, radiator structure spare and semiconductor light emitting structure place in the described lamp socket, described semiconductor light emitting structure comprises: substrate is provided with the conducting wire in the described substrate; The brilliant first body of a plurality of PN junctions, sheet is shown consideration on a surface of described substrate by the brilliant unit of described a plurality of PN junctions, and is connected with driving power by described conducting wire; Wherein, the brilliant first body of described a plurality of PN junction is divided into high colour temperature group and low colour temperature group; Described radiator structure spare is fixed on the another side of described substrate; Described driving power electrically connects by one tunnel wiring and high colour temperature group, electrically connects by another road wiring and low colour temperature group.
Optionally, the quantity of the brilliant first body of described PN junction is 2～50.
Optionally, the power of the brilliant first body of described PN junction is 0.05W～1W, and drive current is 50mA～350mA.
Optionally, the brilliant first body of described PN junction comprises: the brilliant first body of brilliant first body of high colour temperature PN junction and low colour temperature PN junction.
Optionally, the colour temperature of the brilliant first body of described high colour temperature PN junction is 4500K～10000K, and the colour temperature of the brilliant first body of described low colour temperature PN junction is 2000K～4500K.
Optionally, described high colour temperature group is by the brilliant first body series connection of described high colour temperature PN junction or be connected in parallel and form.
Optionally, described low colour temperature group is by the brilliant first body series connection of described low colour temperature PN junction or be connected in parallel and form.
Optionally, described substrate is a surface plate, is shaped as square or rectangle or circle.
Optionally, the brilliant first body of described PN junction comprises positive pole and negative pole, has the pad that a plurality of and described conducting wire is connected on the described substrate, and the positive pole and the negative pole of the brilliant first body of described PN junction are electrically connected with a described pad respectively.
Optionally, described radiator structure spare utilizes heat conductive silica gel to be bonded on the another side of described substrate.
Optionally, described semiconductor light sources also comprises a plurality of exterior piece structures, and described exterior piece structure is arranged on the described lamp socket.
Optionally, in the described lamp socket draw-in groove is set, described radiator structure spare is fixed in the described lamp socket by described draw-in groove.
Semiconductor light emitting structure provided by the invention and semiconductor light sources, utilize directly luminous mechanism of the brilliant first body of PN junction, by with the direct paster of the brilliant first body of PN junction on substrate, and be connected with driving power by the conducting wire that is provided with in the substrate, it is luminous directly to drive the first body of PN junction crystalline substance.Promptly introduced the direct ray structure of the first body of a kind of crystalline substance and replaced LED encapsulating structure of the prior art,, improved the radiating effect of semiconductor light emitting structure and semiconductor light sources owing to do not need resin-encapsulated.Simultaneously, omit the complicated procedures of forming of LED encapsulation, reduced the manufacturing cost of semiconductor light sources.In addition, by regulating the bright dark variation of brilliant first body of high colour temperature group PN junction and the brilliant first body of low colour temperature group PN junction, the colour temperature that can effectively regulate semiconductor light sources itself changes, and satisfies the requirement of people's life and work.
Description of drawings
Fig. 1 a is the structural representation of the semiconductor light emitting structure of one embodiment of the invention;
Fig. 1 b is the vertical view of the semiconductor light emitting structure of one embodiment of the invention;
Fig. 2 is the vertical view of the semiconductor light emitting structure of another embodiment of the present invention;
Fig. 3 a is the structural representation of the semiconductor light sources of one embodiment of the invention;
Fig. 3 b is the front view of the semiconductor light sources of one embodiment of the invention;
The specific embodiment
Below in conjunction with the drawings and specific embodiments semiconductor light emitting structure provided by the invention and semiconductor light sources are described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
Core concept of the present invention is, a kind of semiconductor light emitting structure and semiconductor light sources are provided, utilize directly luminous mechanism of the brilliant first body of PN junction, by with the direct paster of the brilliant first body of PN junction on substrate, and be connected with driving power by the conducting wire that is provided with in the substrate, it is luminous directly to drive the first body of PN junction crystalline substance.Promptly introduced the direct ray structure of the first body of a kind of crystalline substance and replaced LED encapsulating structure of the prior art,, improved the radiating effect of semiconductor light emitting structure and semiconductor light sources owing to do not need resin-encapsulated.Simultaneously, omit the complicated procedures of forming of LED encapsulation, reduced the manufacturing cost of semiconductor light sources.In addition, by regulating the bright dark variation of brilliant first body of high colour temperature group PN junction and the brilliant first body of low colour temperature group PN junction, the colour temperature that can effectively regulate semiconductor light sources itself changes, and satisfies the requirement of people's life and work.
Please refer to shown in Fig. 1 a and Fig. 1 b, wherein, Fig. 1 a is the structural representation of the semiconductor light emitting structure of one embodiment of the invention, and Fig. 1 b is the vertical view of the semiconductor light emitting structure of one embodiment of the invention.
Shown in Fig. 1 a and Fig. 1 b, semiconductor light emitting structure 1 comprises: the brilliant first body 12 (schematically illustrating among Fig. 1 a) of substrate 10 and a plurality of PN junction, wherein, be provided with conducting wire 11 in the substrate 10, brilliant first body 12 pasters of a plurality of PN junctions and are connected by described conducting wire 11 and driving power (Fig. 1 a with Fig. 1 b in not shown) on a surface of described substrate 10; Wherein, the brilliant first body 12 of described a plurality of PN junction is divided into high colour temperature group 120 and low colour temperature group 121.The semiconductor light emitting structure 1 that the embodiment of the invention provided with the brilliant first body 12 direct pasters of PN junction on substrate 10, and the conducting wires of passing through to be provided with in the substrate 10 11 are connected with driving power, it is luminous directly to drive the brilliant first body of PN junction 12, do not need to carry out the LED packaging process, improve the radiating effect of semiconductor light emitting structure 1 thus, reduced manufacturing cost.In addition, the brilliant first body 12 of a plurality of PN junctions is divided into high colour temperature group 120 and low colour temperature group 121, and by regulating the bright dark variation of brilliant first body of high colour temperature group PN junction and the brilliant first body of low colour temperature group PN junction, the colour temperature that can effectively regulate light source itself changes.
Please continue with reference to figure 1a and Fig. 1 b, the quantity of the brilliant first body 12 of described PN junction is 2～50, and power is 0.05W～1W, and drive current is 50mA～350mA.Consider the size of substrate 10, and the size that comprises the semiconductor light sources of substrate 10, the quantity of the brilliant first body 12 of PN junction is advisable at 2～50.Size in semiconductor light sources is bigger, and when for example outdoor large threw light on, the quantity of the brilliant first body of PN junction can be for more a plurality of as required.
In the present embodiment, the brilliant first body 12 of described PN junction comprises brilliant first body of high colour temperature PN junction and the brilliant first body of low colour temperature PN junction, and the colour temperature of the brilliant first body of described high colour temperature PN junction is 4500K～10000K, and the colour temperature of the brilliant first body of described low colour temperature PN junction is 2000K～4500K.Described high colour temperature group 120 can or be connected in parallel by the brilliant first body series connection of described high colour temperature PN junction and form.Described low colour temperature group 121 can or be connected in parallel by the brilliant first body series connection of described low colour temperature PN junction and form.According to semiconductor light emitting structure 1 and the variable color temperature demand that comprises the semiconductor light sources of semiconductor light emitting structure 1, the quantity of brilliant first body of described high colour temperature PN junction and the brilliant first body of low colour temperature PN junction can equate also can not wait.
High colour temperature group 120 that connects to form by the brilliant first body serial or parallel connection of described high colour temperature PN junction and the low colour temperature group 121 that connects to form by the brilliant first body serial or parallel connection of described low colour temperature PN junction can symmetry also can be asymmetric, for example: quantity is that the brilliant first body of 6 high colour temperature PN junction can be formed high colour temperature group by being cascaded, and same quantity to be 6 the brilliant first body of low colour temperature PN junction can form low colour temperature group by three three series connection are in parallel again, this be high colour temperature group 120 and low colour temperature group 121 can symmetry also can be asymmetric.
Please continue the 1b with reference to figure, as shown in the figure, described substrate 10 is a surface plate, and it is shaped as rectangle.Refer again to Fig. 2, it is the vertical view of the semiconductor light emitting structure of another embodiment of the present invention.As shown in Figure 2, semiconductor light emitting structure 1 ' substrate 10 ' be shaped as circle.In other fact Examples of the present invention, the substrate of semiconductor light emitting structure can also be other shape, as square, rhombus etc.The substrate shape of semiconductor light emitting structure is circular best, because the cross section of semiconductor light sources is generally circular, in order to cooperate with the cross section of semiconductor light sources, the substrate shape of semiconductor light emitting structure is circular best.Certainly, in order to satisfy the needs of special lighting, the substrate shape of semiconductor light emitting structure also can be irregularly shaped for other.
Please refer to Fig. 1 a, the brilliant first body 12 of described PN junction comprises positive pole (not marking among Fig. 1 a) and negative pole (not marking among Fig. 1 a), have the pad (not shown among Fig. 1 a) that a plurality of and described conducting wire 11 is connected on the described substrate 10, and the positive pole and the negative pole of the brilliant first body 12 of described PN junction are electrically connected with a described pad respectively.
Accordingly, the present invention also provides a kind of semiconductor light sources.Specifically please refer to shown in Fig. 3 a and Fig. 3 b, wherein, Fig. 3 a is the structural representation of the semiconductor light sources of one embodiment of the invention, and Fig. 3 b is the front view of the semiconductor light sources of one embodiment of the invention.
Shown in Fig. 3 a, a kind of semiconductor light sources 2 (is the clear structure that shows semiconductor light sources 2, present with discrete form between each attaching parts among Fig. 3 a) comprising: lamp holder 20, lamp socket 21, driving power 22, radiator structure spare 23, semiconductor light emitting structure 1 and lampshade 24, described lamp holder 20 is connected with described lamp socket 21, described lamp socket 21 is connected with described lampshade 24, described driving power 22, radiator structure spare 23 and semiconductor light emitting structure 1 place in the described lamp socket 21, wherein, described semiconductor light emitting structure 1 comprises: substrate (not marking among Fig. 3 a) is provided with conducting wire (not shown among Fig. 3 a) in the described substrate; The brilliant first body (not marking among Fig. 3 a) of a plurality of PN junctions, sheet is shown consideration on a surface of described substrate by the brilliant unit of described a plurality of PN junctions, and is connected with driving power 22 by described conducting wire; Wherein, the brilliant first body of described a plurality of PN junction is divided into high colour temperature group and low colour temperature group (not marking among Fig. 3 a); Described radiator structure spare 23 is fixed on the another side (away from the one side of the brilliant first body of a plurality of PN junctions) of described substrate; Described driving power 22 electrically connects by one tunnel wiring (not shown among Fig. 3 a) and high colour temperature group, and electrically connects by another road wiring (not shown among Fig. 3 a) and low colour temperature group.
Please refer to Fig. 3 b, can further understand, described lamp holder 20 is connected with described lamp socket 21, and described lamp socket 21 is connected with described lampshade 24, and because described driving power 22, radiator structure spare 23 and semiconductor light emitting structure 1 place in the described lamp socket 21, be invisible in Fig. 3 b therefore.The semiconductor light sources that the embodiment of the invention provided with the direct paster of the brilliant first body of PN junction on substrate, and the conducting wire of passing through to be provided with in the substrate is connected with driving power, it is luminous directly to drive the brilliant first body of PN junction, do not need to carry out the LED packaging process, improve the radiating effect of semiconductor light emitting structure thus, reduced manufacturing cost.In addition, the brilliant first body of a plurality of PN junctions is divided into high colour temperature group and low colour temperature group, and by regulating the bright dark variation of brilliant first body of high colour temperature group PN junction and the brilliant first body of low colour temperature group PN junction, the colour temperature that can effectively regulate light source itself changes.
Please continue with reference to figure 3a and Fig. 3 b, because semiconductor light sources 2 comprises semiconductor light emitting structure 1, therefore possess under the situation of aforesaid structure and performance at semiconductor light emitting structure 1, semiconductor light sources 2 possesses aforesaid structure and performance certainly.
Further, in an embodiment of the present invention, radiator structure spare 23 can utilize heat conductive silica gel to be bonded on the another side of substrate (not indicating among Fig. 3 a and Fig. 3 b) of semiconductor light emitting structure 1, promptly with paster the relative one side of the brilliant first body of PN junction is arranged.Heat conductive silica gel removes possesses caking property, radiator structure spare 23 can be bonded on the another side of substrate of semiconductor light emitting structure 1, have better thermal conductivity compared to other binding agent, can further improve the radiating effect of semiconductor light sources 2, improve the reliability of semiconductor light sources 2.
In the present embodiment, described semiconductor light sources 2 also comprises a plurality of exterior piece structures 210, and described exterior piece structure 210 is arranged on the described lamp socket 21.Can further improve the radiating effect of semiconductor light sources 2 by described exterior piece structure 210, improve the reliability of semiconductor light sources 2.
Further, in the described lamp socket 21 draw-in groove 211 can be set, described radiator structure spare 23 can be fixed in the described lamp socket 21 by described draw-in groove 211, thereby improves the structural stability of semiconductor light sources 2.
Foregoing description only is the description to preferred embodiment of the present invention, is not any qualification to the scope of the invention, and any change, modification that the those of ordinary skill in field of the present invention is done according to above-mentioned disclosure all belong to the protection domain of claims.
Claims (21)
1. a semiconductor light emitting structure is characterized in that, comprising:
Substrate is provided with the conducting wire in the described substrate;
The brilliant first body of a plurality of PN junctions, sheet is shown consideration on a surface of described substrate by the brilliant unit of described a plurality of PN junctions, and is connected with driving power by described conducting wire;
Wherein, the brilliant first body of described a plurality of PN junction is divided into high colour temperature group and low colour temperature group.
2. semiconductor light emitting structure as claimed in claim 1 is characterized in that, the quantity of the brilliant first body of described PN junction is 2～50.
3. semiconductor light emitting structure as claimed in claim 1 is characterized in that, the power of the brilliant first body of described PN junction is 0.05W～1W, and drive current is 50mA～350mA.
4. semiconductor light emitting structure as claimed in claim 1 is characterized in that, the brilliant first body of described PN junction comprises: the brilliant first body of brilliant first body of high colour temperature PN junction and low colour temperature PN junction.
5. semiconductor light emitting structure as claimed in claim 4 is characterized in that, the colour temperature of the brilliant first body of described high colour temperature PN junction is 4500K～10000K, and the colour temperature of the brilliant first body of described low colour temperature PN junction is 2000K～4500K.
6. semiconductor light emitting structure as claimed in claim 4 is characterized in that, described high colour temperature group is connected or is connected in parallel by the brilliant first body of described high colour temperature PN junction and forms.
7. semiconductor light emitting structure as claimed in claim 4 is characterized in that, described low colour temperature group is connected or is connected in parallel by the brilliant first body of described low colour temperature PN junction and forms.
8. semiconductor light emitting structure as claimed in claim 1 is characterized in that described substrate is a surface plate, is shaped as square or rectangle or circle.
9. semiconductor light emitting structure as claimed in claim 1, it is characterized in that, the brilliant first body of described PN junction comprises positive pole and negative pole, has the pad that a plurality of and described conducting wire is connected on the described substrate, and the positive pole and the negative pole of the brilliant first body of described PN junction are electrically connected with a described pad respectively.
10. semiconductor light sources, comprise lamp holder, lamp socket, driving power, radiator structure spare, semiconductor light emitting structure and lampshade, described lamp holder is connected with described lamp socket, described lamp socket is connected with described lampshade, described driving power, radiator structure spare and semiconductor light emitting structure place in the described lamp socket, it is characterized in that
Described semiconductor light emitting structure comprises: substrate is provided with the conducting wire in the described substrate; The brilliant first body of a plurality of PN junctions, sheet is shown consideration on a surface of described substrate by the brilliant unit of described a plurality of PN junctions, and is connected with driving power by described conducting wire; Wherein, the brilliant first body of described a plurality of PN junction is divided into high colour temperature group and low colour temperature group;
Described radiator structure spare is fixed on the another side of described substrate;
Described driving power electrically connects by one tunnel wiring and high colour temperature group, and electrically connects by another road wiring and low colour temperature group.
11. semiconductor light sources as claimed in claim 10 is characterized in that, the quantity of the brilliant first body of described PN junction is 2～50.
12. semiconductor light sources as claimed in claim 10 is characterized in that, the power of the brilliant first body of described PN junction is 0.05W～1W, and drive current is 50mA～350mA.
13. semiconductor light sources as claimed in claim 10 is characterized in that, the brilliant first body of described PN junction comprises: the brilliant first body of brilliant first body of high colour temperature PN junction and low colour temperature PN junction.
14. semiconductor light sources as claimed in claim 13 is characterized in that, the colour temperature of the brilliant first body of described high colour temperature PN junction is 4500K～10000K, and the colour temperature of the brilliant first body of described low colour temperature PN junction is 2000K～4500K.
15. semiconductor light sources as claimed in claim 13 is characterized in that, described high colour temperature group is connected or is connected in parallel by the brilliant first body of described high colour temperature PN junction and forms.
16. semiconductor light sources as claimed in claim 13 is characterized in that, described low colour temperature group is connected or is connected in parallel by the brilliant first body of described low colour temperature PN junction and forms.
17. semiconductor light sources as claimed in claim 10 is characterized in that, described substrate is a surface plate, is shaped as square or rectangle or circle.
18. semiconductor light sources as claimed in claim 10, it is characterized in that, the brilliant first body of described PN junction comprises positive pole and negative pole, has the pad that a plurality of and described conducting wire is connected on the described substrate, and the positive pole and the negative pole of the brilliant first body of described PN junction are electrically connected with a described pad respectively.
19. semiconductor light sources as claimed in claim 10 is characterized in that, described radiator structure spare utilizes heat conductive silica gel to be bonded on the another side of described substrate.
20. semiconductor light sources as claimed in claim 10 is characterized in that, described semiconductor light sources also comprises a plurality of exterior piece structures, and described exterior piece structure is arranged on the described lamp socket.
21. semiconductor light sources as claimed in claim 10 is characterized in that, in the described lamp socket draw-in groove is set, described radiator structure spare is fixed in the described lamp socket by described draw-in groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105279253A CN102062312A (en) | 2010-11-01 | 2010-11-01 | Semiconductor luminous structure and semiconductor light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105279253A CN102062312A (en) | 2010-11-01 | 2010-11-01 | Semiconductor luminous structure and semiconductor light source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102062312A true CN102062312A (en) | 2011-05-18 |
Family
ID=43997717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105279253A Pending CN102062312A (en) | 2010-11-01 | 2010-11-01 | Semiconductor luminous structure and semiconductor light source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102062312A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1470072A (en) * | 2000-10-16 | 2004-01-21 | ��˹��ķ�����а뵼���������ι�˾ | LED module |
| CN1545148A (en) * | 2003-11-25 | 2004-11-10 | 葛世潮 | High power LED |
| CN1812143A (en) * | 2005-01-24 | 2006-08-02 | 史杰 | LED luminous diode |
| CN101782188A (en) * | 2009-01-21 | 2010-07-21 | 沈锦祥 | Full color temperature lighting instrument |
| CN201866580U (en) * | 2010-11-01 | 2011-06-15 | 上海宏源照明电器有限公司 | Semiconductor light emitting structure and semiconductor light source |
-
2010
- 2010-11-01 CN CN2010105279253A patent/CN102062312A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1470072A (en) * | 2000-10-16 | 2004-01-21 | ��˹��ķ�����а뵼���������ι�˾ | LED module |
| CN1545148A (en) * | 2003-11-25 | 2004-11-10 | 葛世潮 | High power LED |
| CN1812143A (en) * | 2005-01-24 | 2006-08-02 | 史杰 | LED luminous diode |
| CN101782188A (en) * | 2009-01-21 | 2010-07-21 | 沈锦祥 | Full color temperature lighting instrument |
| CN201866580U (en) * | 2010-11-01 | 2011-06-15 | 上海宏源照明电器有限公司 | Semiconductor light emitting structure and semiconductor light source |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20150086226A (en) | Method for constructing universal led bulb and snap ring lens type led bulb and led lamp | |
| CN201621640U (en) | Cross-shaped LED lamp holder | |
| CN201858552U (en) | Light-emitting device of semiconductor light source | |
| CN104930470A (en) | LED (light emitting diode) lamp panel structure | |
| CN201844222U (en) | Semiconductor light source and light-emitting structure thereof | |
| CN201866580U (en) | Semiconductor light emitting structure and semiconductor light source | |
| CN204756804U (en) | LED lamp plate structure | |
| CN2901016Y (en) | Light emitting unit of LED | |
| CN102062312A (en) | Semiconductor luminous structure and semiconductor light source | |
| CN2924272Y (en) | Light-emitting device | |
| CN201475710U (en) | Energy-saving LED bulb | |
| CN205037124U (en) | High color development, high light efficiency XX and XY type paster combination LED light source module | |
| CN201621511U (en) | T-shaped LED lamp cap | |
| CN103174959A (en) | 360-degree luminous bulb | |
| CN203585853U (en) | Fluorescent lamp structure with 360-degree light emitting function | |
| CN101893177A (en) | Semiconductor light source and light-emitting structure thereof | |
| CN203336295U (en) | LED lamp convenient to install and dismantle | |
| CN209896102U (en) | Light emitting diode packaging structure | |
| CN214664246U (en) | White light LED light-emitting device without fluorescent powder | |
| CN201706232U (en) | LED lamp tube | |
| CN217329624U (en) | Photovoltaic power generation LED lamp module that can splice | |
| CN202452143U (en) | 15-string and eight-parallel-branch light emitting diode (LED) chip integrated surface light source | |
| CN202452142U (en) | Eight-string and ten-parallel-branch light emitting diode (LED) chip integrated surface light source | |
| CN213746276U (en) | Improved LED lighting lamp | |
| CN201615356U (en) | LED lamp incapable of generating faculae |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: JIANGSU LIDE LIGHTING INDUSTRIAL CO., LTD. Free format text: FORMER OWNER: SHANGHAI HONGYUAN LIGHTING + ELECTRIC EQUIPMENT CO., LTD. Effective date: 20120220 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201802 JIADING, SHANGHAI TO: 224007 YANCHENG, JIANGSU PROVINCE |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20120220 Address after: 118, room 18, China Merchants Building, 224007 Songjiang Road, Yancheng Economic Development Zone, Jiangsu, Jiangsu, Yancheng City Applicant after: Jiangsu Lide Lighting Industry Co., Ltd. Address before: Shanghai City, Jiading District Shanghai road 201802 really Nanxiang Town, No. 5028 Applicant before: Shanghai Hongyuan Lighting & Electric Equipment Co., Ltd. |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110518 |