CN102051175A - Lanthanide series gallate luminous material and preparation method thereof - Google Patents
Lanthanide series gallate luminous material and preparation method thereof Download PDFInfo
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- CN102051175A CN102051175A CN2009101102919A CN200910110291A CN102051175A CN 102051175 A CN102051175 A CN 102051175A CN 2009101102919 A CN2009101102919 A CN 2009101102919A CN 200910110291 A CN200910110291 A CN 200910110291A CN 102051175 A CN102051175 A CN 102051175A
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Abstract
The invention relates to a lanthanide series gallate luminous material and a preparation method thereof. The chemical formula of the lanthanide series gallate luminous material is La1-xGa1-yO3: Lnx, Sny, wherein Ln is one or two of Tm, Tb, Eu, Pr and Sm; and x is 0.001 to 0.15, and y is 0.001 to 0.05. Compounds containing La, Ga and Ln respectively and SnO2 are used as raw materials. The preparation method comprises the following steps of: grinding all the raw materials, mixing powder uniformly, roasting the mixed powder for 1 to 8 hours at the temperature of between 1,100 and 1,400 DEG C, cooling the roasted product to room temperature, and grinding the obtained product into powder so as to obtain the lanthanide series gallate luminous material. The preparation method is simple in process and low in cost; and the prepared luminous material has excellent luminous performance and can be used for luminous devices such as light-emitting diodes (LED) and the like.
Description
Technical field
The present invention relates to field of light emitting materials, more particularly, relate to a kind of group of the lanthanides gallate luminous material and preparation method thereof.
Background technology
At present, rare earth luminescent material in various fields extensive application such as information demonstration, lighting source, photoelectric devices, has been a kind of important luminescent material as new and effective luminescent material.By improving the luminous intensity of rare earth luminescent material, not only can improve the performance of luminescent device effectively, can also improve the luminous efficiency of luminescent device simultaneously, and effectively energy-conservation.Therefore, the luminous efficiency of raising rare earth luminescent material is the important content of materials chemistry and the research of materials physics field middle-weight rare earths luminescent material always.
Rare earth ion doped gallate luminous material has good photoluminescence performance, and the three primary colors fluorescent powder that can be used as ultraviolet LED pointolite (UV-LED) is used.Yet, how further to improve the luminescent properties of this material, be the target that the researchist makes great efforts in this area always.
Summary of the invention
The technical problem to be solved in the present invention is, at the above-mentioned defective of prior art, provides a kind of group of the lanthanides gallate luminous material, and this luminescent material utilizes tin (Sn) ion to carry out sensitization, has compared with prior art better luminescent properties.
The technical problem that the present invention further will solve is, the preparation method of a kind of technology group of the lanthanides gallate luminous material simple, with low cost also is provided.
The technical solution adopted for the present invention to solve the technical problems is: a kind of group of the lanthanides gallate luminous material, its chemical formula are La
1-xGa
1-yO
3: Ln
x, Sn
y, in the formula, Ln is a kind of in thulium (Tm), terbium (Tb), europium (Eu), praseodymium (Pr), the samarium (Sm) or two kinds, and the span of x is 0.001～0.15, and the span of y is 0.001～0.05.Wherein, the span of described x is preferably 0.001～0.1, and the span of described y is preferably 0.001～0.02, and most preferably, the span of described x is 0.01～0.1, and the span of described y is 0.01～0.02.
A kind of preparation method of group of the lanthanides gallate luminous material is to contain the compound of La, Ga or Ln respectively, as oxide compound, carbonate, oxalate, nitrate or muriate and the SnO that contains La, Ga or Ln respectively
2Be raw material, all raw material ground and mixed are even, at 1100～1400 ℃ of roasting temperature 1～8h, be cooled to room temperature, promptly obtain above-mentioned group of the lanthanides gallate luminous material, wherein, Ln is a kind of among Tm, Tb, Eu, Pr, the Sm or two kinds.Wherein, maturing temperature is preferably 1200～1350 ℃, and roasting time is preferably 2～6h, most preferably, and at 1250～1300 ℃ of following roasting 4～6h; After product of roasting is cooled to room temperature, preferably, it is ground to powder, obtain above-mentioned group of the lanthanides gallate luminous material.
Introduced the Sn ion in the group of the lanthanides gallate luminous material of the present invention, sensibilized by La rear earth ion in the Sn ion pair luminescent material, with do not introduce Sn ionic luminescent material and compare, the luminescent properties of this luminescent material under the shooting conditions of same transmit optical wavelength is greatly improved, therefore photoluminescence performance is good, the be stimulated purity of color and the brightness of the light that sent of back of this luminescent material is all higher, can be applied in the luminescent device such as LED.
Preparation method's processing step of the present invention is few, and technology is simple, and is with low cost, can be widely used in the manufacturing of luminescent material, and the group of the lanthanides gallate luminous material that obtains is not introduced other impurity, the quality height.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples, in the accompanying drawing:
Fig. 1 is the group of the lanthanides gallate luminous material of the embodiment of the invention 1 preparation and the La that the same process condition prepares
0.95GaO
3: Tb
0.05Luminescent material is the comparison diagram of the emmission spectrum under the excitation of 380nm at wavelength;
Fig. 2 is the group of the lanthanides gallate luminous material of the embodiment of the invention 5 preparations and the La that the same process condition prepares
0.995GaO
3: Sm
0.005Luminescent material is the comparison diagram of the emmission spectrum under the excitation of 408nm at wavelength;
Fig. 3 is the group of the lanthanides gallate luminous material of the embodiment of the invention 7 preparations and the La that the same process condition prepares
0.99GaO
3: Tm
0.01Luminescent material is the comparison diagram of the emmission spectrum under the excitation of 360nm at wavelength.
Emmission spectrum of the present invention is to adopt the RF-5301PC spectrophotofluorometer test of Tianjin, island, and test condition is: 1.5nm slit, highly sensitive.
Embodiment
Embodiment 1, group of the lanthanides gallate luminous material La
0.95Ga
0.99O
3: Tb
0.05, Sn
0.01
Preparation method: adopt La
2O
3, Ga
2O
3, Tb
4O
7And SnO
2Be main raw material, take by weighing La
2O
30.7737g, Ga
2O
30.4639g, Tb
4O
70.0467g, SnO
20.0075g, above-mentioned raw materials mixed be placed in the High Temperature Furnaces Heating Apparatus, at 1300 ℃ of following roasting 4h, product of roasting cools to room temperature with the furnace, resulting product is ground be powder, and promptly obtaining chemical formula is La
0.95Ga
0.99O
3: Tb
0.05, Sn
0.01The group of the lanthanides gallate luminous material.
Fig. 1 is that the luminescent material of present embodiment preparation is the emmission spectrum under the excitation of 380nm at wavelength, and as shown in Figure 1, the luminescent material of present embodiment preparation is launched the green light that wavelength is 544nm, is the La that uses the same process condition to prepare
0.95GaO
3: Tb
0.052.2 times of the luminous intensity of luminescent material under the excitation condition of identical wavelength.
Embodiment 2, group of the lanthanides gallate luminous material La
0.999Ga
0.99O
3: Pr
0.001, Sn
0.01
Preparation method: adopt LaCl
3, GaCl
3, Pr
2(CO
3)
3And SnO
2Be main raw material, take by weighing LaCl
31.2250g, GaCl
30.8715g, Pr
2(CO
3)
30.0011g, SnO
20.0075g, above-mentioned raw materials mixed be placed in the High Temperature Furnaces Heating Apparatus, at 1100 ℃ of following roasting 8h, product of roasting cools to room temperature with the furnace, resulting product is ground be powder, and promptly obtaining chemical formula is La
0.999Ga
0.99O
3: Pr
0.001, Sn
0.01The group of the lanthanides gallate luminous material.
Embodiment 3, group of the lanthanides gallate luminous material La
0.90Ga
0.98O
3: Eu
0.10, Sn
0.02
Preparation method: adopt La
2O
3, GaCl
3, EuCl
3And SnO
2Be main raw material, take by weighing La
2O
30.7330g, GaCl
30.8627g, EuCl
30.1291g, SnO
20.0150g, above-mentioned raw materials mixed be placed in the High Temperature Furnaces Heating Apparatus, at 1200 ℃ of following roasting 5h, product of roasting cools to room temperature with the furnace, resulting product is ground be powder, and promptly obtaining chemical formula is La
0.90Ga
0.98O
3: Eu
0.10, Sn
0.02The group of the lanthanides gallate luminous material.
Embodiment 4, group of the lanthanides gallate luminous material La
0.85Ga
0.99O
3: Tb
0.15, Sn
0.01
Preparation method: adopt La
2(CO
3)
3, Ga
2O
3, Tb
2(C
2O
4)
3And SnO
2Be main raw material, take by weighing La
2(CO
3)
30.9729g, Ga
2O
30.4639g, Tb
2(C
2O
4)
30.2182g, SnO
20.0075g, above-mentioned raw materials mixed be placed in the High Temperature Furnaces Heating Apparatus, at 1400 ℃ of following roasting 1h, product of roasting cools to room temperature with the furnace, resulting product is ground be powder, and promptly obtaining chemical formula is La
0.85Ga
0.99O
3: Tb
0.15, Sn
0.01The group of the lanthanides gallate luminous material.
Embodiment 5, group of the lanthanides gallate luminous material La
0.995Ga
0.99O
3: Sm
0.005, Sn
0.01
Preparation method: adopt La
2O
3, Ga
2O
3, Sm
2O
3And SnO
2Be main raw material, take by weighing La
2O
30.8104g, Ga
2O
30.4639g, Sm
2O
30.043g, SnO
20.0075g, above-mentioned raw materials mixed be placed in the High Temperature Furnaces Heating Apparatus, at 1300 ℃ of following roasting 4h, product of roasting cools to room temperature with the furnace, resulting product is ground be powder, and promptly obtaining chemical formula is La
0.995Ga
0.99O
3: Sm
0.005, Sn
0.01The group of the lanthanides gallate luminous material.
Fig. 2 is that the luminescent material of present embodiment preparation is the emmission spectrum under the excitation of 408nm light at wavelength, and as shown in Figure 2, the luminescent material of present embodiment preparation is launched the red light that wavelength is 598nm, is the La that uses the same process condition to prepare
0.995GaO
3: Sm
0.0053.1 times of the luminous intensity of luminescent material under the excitation condition of identical wavelength.
Embodiment 6, group of the lanthanides gallate luminous material La
0.92Ga
0.999O
3: Pr
0.08, Sn
0.001
Preparation method: adopt La
2(C
2O
4)
3, GaCl
3, Pr (NO
3)
3And SnO
2Be main raw material, take by weighing La
2(C
2O
4)
31.2462g, GaCl
30.8795g, Pr (NO
3)
30.1307g, SnO
20.0007g, above-mentioned raw materials mixed be placed in the High Temperature Furnaces Heating Apparatus, at 1400 ℃ of following roasting 2h, product of roasting cools to room temperature with the furnace, resulting product is ground be powder, and promptly obtaining chemical formula is La
0.92Ga
0.999O
3: Pr
0.08, Sn
0.001The group of the lanthanides gallate luminous material.
Embodiment 7, group of the lanthanides gallate luminous material La
0.99Ga
0.99O
3: Tm
0.01, Sn
0.01
Preparation method: adopt La
2O
3, Ga
2O
3, Tm
2O
3And SnO
2Be main raw material, take by weighing La
2O
30.8063g, Ga
2O
30.4639g, Tm
2O
30.096g, SnO
20.0075g, above-mentioned raw materials mixed be placed in the High Temperature Furnaces Heating Apparatus, at 1300 ℃ of following roasting 4h, product of roasting cools to room temperature with the furnace, resulting product is ground be powder, and promptly obtaining chemical formula is La
0.99Ga
0.99O
3: Tm
0.01, Sn
0.01The group of the lanthanides gallate luminous material.
Fig. 3 is that the luminescent material of present embodiment preparation is the emmission spectrum under the excitation of 360nm at wavelength, and as shown in Figure 3, the luminescent material of present embodiment preparation is launched the blue light that wavelength is 460nm, is the La that uses the same process condition to prepare
0.99GaO
3: Tm
0.012.3 times of the luminous intensity of luminescent material under the excitation condition of identical wavelength.
Embodiment 8, group of the lanthanides gallate luminous material La
0.98Ga
0.95O
3: Sm
0.02, Sn
0.05
Preparation method: adopt La (NO
3)
3, Ga
2O
3, Sm
2(CO
3)
3And SnO
2Be main raw material, take by weighing La (NO
3)
31.5920g, Ga
2O
30.4451g, Sm
2(CO
3)
30.0240g, SnO
20.0376g, above-mentioned raw materials mixed be placed in the High Temperature Furnaces Heating Apparatus, at 1250 ℃ of following roasting 6h, the product of roasting furnace cooling is cooled to room temperature, resulting product is ground be powder, and promptly obtaining chemical formula is La
0.98Ga
0.95O
3: Sm
0.02, Sn
0.05The group of the lanthanides gallate luminous material.
Embodiment 9, group of the lanthanides gallate luminous material La
0.92Ga
0.988O
3: Eu
0.03, Tb
0.05, Sn
0.012
Preparation method: adopt LaCl
3, GaCl
3, Eu
2(CO
3)
3, Tb
4O
7And SnO
2Be main raw material, take by weighing LaCl
31.1282g, GaCl
30.8696g, Eu
2(CO
3)
30.0363g, Tb
4O
70.0467g, SnO
20.0090g, above-mentioned raw materials mixed be placed in the High Temperature Furnaces Heating Apparatus, at 1100 ℃ of following roasting 8h, product of roasting cools to room temperature with the furnace, resulting product is ground be powder, and promptly obtaining chemical formula is La
0.92Ga
0.988O
3: Eu
0.03, Tb
0.05, Sn
0.012The group of the lanthanides gallate luminous material.
Embodiment 10, group of the lanthanides gallate luminous material La
0.975Ga
0.985O
3: Tb
0.02, Sm
0.005, Sn
0.015
Preparation method: use La
2O
3, GaCl
3, Tb
4O
7, Sm
2(CO
3)
3And SnO
2Be main raw material, take by weighing La
2O
30.7942g, GaCl
30.8672g, Tb
4O
70.0187g, Sm
2(CO
3)
30.0060g, SnO
20.0113g, above-mentioned raw materials mixed be placed in the High Temperature Furnaces Heating Apparatus, at 1200 ℃ of following roasting 5h, product of roasting cools to room temperature with the furnace, resulting product is ground be powder, and promptly obtaining chemical formula is La
0.975Ga
0.985O
3: Tb
0.02, Sm
0.005, Sn
0.015The group of the lanthanides gallate luminous material.
Claims (10)
1. group of the lanthanides gallate luminous material, it is characterized in that: the chemical formula of this group of the lanthanides gallate is La
1-xGa
1-yO
3: Ln
x, Sn
y, in the formula, Ln is a kind of among Tm, Tb, Eu, Pr, the Sm or two kinds, and x is 0.001～0.15, and y is 0.001～0.05.
2. group of the lanthanides gallate luminous material according to claim 1 is characterized in that, described x is 0.001～0.1.
3. group of the lanthanides gallate luminous material according to claim 1 is characterized in that, described y is 0.001～0.02.
4. according to claim 2 or 3 described group of the lanthanides gallate luminous materials, it is characterized in that described x is 0.01～0.1, described y is 0.01～0.02.
5. the preparation method of a group of the lanthanides gallate luminous material is characterized in that, may further comprise the steps:
1. compound and the SnO to contain La, Ga or Ln respectively
2Be raw material, all raw material ground and mixed are even;
2. at 1100～1400 ℃ of roasting temperature 1～8h;
3. step product of roasting 2. is cooled to room temperature, promptly obtaining chemical formula is La
1-xGa
1-yO
3: Ln
x, Sn
yThe group of the lanthanides gallate luminous material;
In the described chemical formula, Ln is a kind of among Tm, Tb, Eu, Pr, the Sm or two kinds, and x is 0.001～0.15, and y is 0.001～0.05.
6. the preparation method of group of the lanthanides gallate luminous material according to claim 5 is characterized in that, the compound that described step contains La, Ga or Ln in 1. is respectively oxide compound, carbonate, oxalate, nitrate or the muriate that contains La, Ga or Ln.
7. the preparation method of group of the lanthanides gallate luminous material according to claim 5 is characterized in that, the maturing temperature of described step in 2. is 1200～1350 ℃.
8. the preparation method of group of the lanthanides gallate luminous material according to claim 5 is characterized in that, described step 2. in roasting time be 2～6h.
9. according to the preparation method of claim 7 or 8 described group of the lanthanides gallate luminous materials, it is characterized in that 2. described step is at 1250～1300 ℃ of following roasting 4～6h.
10. power is characterized in that according to the preparation method of the described group of the lanthanides gallate luminous material of claim 5, and 3. described step be, step product of roasting 2. is cooled to room temperature, and grinds and be powder, and promptly obtaining chemical formula is La
1-xGa
1-yO
3: Ln
x, Sn
yThe group of the lanthanides gallate luminous material.
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|---|---|---|---|
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|---|---|---|---|
| CN 200910110291 CN102051175B (en) | 2009-10-30 | 2009-10-30 | Lanthanide series gallate luminous material and preparation method thereof |
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|---|---|
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| CN102051175B CN102051175B (en) | 2013-05-08 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104059666A (en) * | 2013-03-20 | 2014-09-24 | 海洋王照明科技股份有限公司 | Sn-doped gallate red light luminescent material and preparation method thereof |
| CN104178161A (en) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | Samarium- ytterbium- co-doped rare earth gallate up-conversion luminescent materials, and preparing method and applications thereof |
| CN104178167A (en) * | 2013-05-23 | 2014-12-03 | 海洋王照明科技股份有限公司 | Sulfur-substituted rare earth gallate luminescent film, preparing method thereof and electroluminescent device |
| DE102020201617A1 (en) | 2020-02-10 | 2021-08-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | LUMINOUS, METHOD FOR MANUFACTURING LUMINOUS, OPTOELECTRONIC COMPONENT AND NIR SPECTROMETER |
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|---|---|---|---|---|
| JP2000077358A (en) * | 1998-08-27 | 2000-03-14 | Asahi Glass Co Ltd | Transparent conductive film, sputtering target and basic body with transparent conductive film |
| CN1577548A (en) * | 2003-07-25 | 2005-02-09 | 松下电器产业株式会社 | Information recording medium and method for producing the same |
-
2009
- 2009-10-30 CN CN 200910110291 patent/CN102051175B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000077358A (en) * | 1998-08-27 | 2000-03-14 | Asahi Glass Co Ltd | Transparent conductive film, sputtering target and basic body with transparent conductive film |
| CN1577548A (en) * | 2003-07-25 | 2005-02-09 | 松下电器产业株式会社 | Information recording medium and method for producing the same |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104059666A (en) * | 2013-03-20 | 2014-09-24 | 海洋王照明科技股份有限公司 | Sn-doped gallate red light luminescent material and preparation method thereof |
| CN104178161A (en) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | Samarium- ytterbium- co-doped rare earth gallate up-conversion luminescent materials, and preparing method and applications thereof |
| CN104178167A (en) * | 2013-05-23 | 2014-12-03 | 海洋王照明科技股份有限公司 | Sulfur-substituted rare earth gallate luminescent film, preparing method thereof and electroluminescent device |
| DE102020201617A1 (en) | 2020-02-10 | 2021-08-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | LUMINOUS, METHOD FOR MANUFACTURING LUMINOUS, OPTOELECTRONIC COMPONENT AND NIR SPECTROMETER |
| US12117394B2 (en) | 2020-02-10 | 2024-10-15 | Ams-Osram International Gmbh | Luminophore, process for producing a luminophore, optoelectronic component and NIR spectrometer |
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| CN102051175B (en) | 2013-05-08 |
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