CN102044578A - Efficient solar battery - Google Patents

Efficient solar battery Download PDF

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Publication number
CN102044578A
CN102044578A CN 200910206379 CN200910206379A CN102044578A CN 102044578 A CN102044578 A CN 102044578A CN 200910206379 CN200910206379 CN 200910206379 CN 200910206379 A CN200910206379 A CN 200910206379A CN 102044578 A CN102044578 A CN 102044578A
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battery
solar cells
gan
junction solar
real number
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李世昌
林义杰
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Epistar Corp
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Epistar Corp
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Priority to CN 200910206379 priority Critical patent/CN102044578A/en
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

The invention relates to a solar battery which comprises a base plate, a buffer layer, a SixGe(1-x) bottom battery, a first tunneling layer, a GaNyAs(1-y) intermediate battery, a second tunneling layer, a GazIn(1-z)P top battery and a contact layer, wherein the buffer layer is positioned on the base plate; the SixGe(1-x) bottom battery is positioned on the buffer layer; the first tunneling layer is positioned on the SixGe(1-x) bottom battery; the GaNyAs(1-y) intermediate battery is positioned on the first tunneling layer; the second tunneling layer is positioned on the GaNyAs(1-y) intermediate battery; the GazIn(1-z)P top battery is positioned on the second tunneling layer; and the contact layer is positioned on the GazIn(1-z)P top battery.

Description

High efficiency solar cell
Technical field
The present invention is about solar cell, especially about high efficiency solar cell.
Background technology
Photoelectric cell comprises numerous species, for example light-emitting diode (Light-emitting Diode; LED), solar cell (Solar Cell) or photodiode (Photo Diode) etc.
Because the fossil energy shortage, and people improve the cognition of environmental protection importance, so people constantly actively research and develop the correlation technique of the alternative energy source and the renewable energy resources in recent years, wherein attract most attention with solar cell.Mainly be because solar cell can directly become electric energy with solar energy converting, and can not produce harmful substances such as carbon dioxide or nitride in the power generation process, can not pollute environment.In the solar cell again with the tool development potentiality of three junction solar cells of InGaP/GaAs/Ge.Yet the energy conversion efficiency of three junction solar cells of InGaP/GaAs/Ge does not reach optimum value as yet, and one of its reason is InGaP, and the semiconductor energy gap combination of GaAs and Ge can't reach currents match.For example the energy gap of InGaP top battery is about 1.85eV, and the electric current of generation is about 18mA/cm 2～20mA/cm 2, the energy gap of GaAs intermediate cell is about 1.405eV, and the electric current of generation is about 14mA/cm 2～16mA/cm 2And the energy gap of battery is less at the bottom of the Ge, is about 0.67eV, can produce bigger electric current, is about 26mA/cm 2～30mA/cm 2, the difference between current distance that produces with InGaP top battery GaAs intermediate cell is bigger, the therefore loss that produces current/voltage, the energy conversion efficiency of reduction solar cell.
Above-mentioned photoelectric cell as solar cell etc. can comprise substrate and electrode, can be connected with pedestal via welding block or glue material with substrate further, and forms light-emitting device or extinction device.In addition, pedestal also has at least one circuit, and via conductive structure, metal wire for example is electrically connected the electrode of photoelectric cell.
Summary of the invention
Solar cell comprises substrate at least; Resilient coating is positioned on the substrate; Si xGe (1-x)End battery is positioned on the resilient coating, wherein 0.005＜x＜0.065; First tunneling layer is positioned at Si xGe (1-x)On the end battery; GaN yAs (1-y)Intermediate cell is positioned on first tunneling layer, wherein 0.002＜y＜0.02; Second tunneling layer is positioned at GaN yAs (1-y)On the intermediate cell; Ga zIn (1-z)P top battery is positioned on second tunneling layer, wherein 0.52＜z＜0.57; And contact layer is positioned at Ga zIn (1-z)On the battery of P top.
Description of drawings
Accompanying drawing is the part of this specification in order to promote the understanding of the present invention.The embodiment of accompanying drawing cooperates the explanation of execution mode to explain principle of the present invention.
Fig. 1 is the profile according to embodiments of the invention.
Fig. 2 is the lattice constant of material and the schematic diagram of energy gap.
Fig. 3 is the efficient schematic diagram according to embodiments of the invention.
The main element symbol description
1: solar cell
10: substrate
11: resilient coating
12:Si xGe (1-x)End battery
13: the first tunneling layers
14:GaN yAs (1-y)Intermediate cell
15: the second tunneling layers
16:Ga zIn (1-z)P top battery
17: contact layer
Execution mode
Embodiments of the invention can be described in detail, and are drawn in the accompanying drawing, and identical or similar part can occur at each accompanying drawing and explanation with identical number.
As shown in Figure 1, solar cell 1 comprises substrate 10 at least; Resilient coating 11 is positioned on the substrate 10; Si xGe (1-x)End battery 12 is positioned on the resilient coating 11, and wherein x is a real number, and scope is 0＜x＜1, is preferably 0.005＜x＜0.065; First tunneling layer 13 is positioned at Si xGe (1-x)On the end battery 12; GaN yAs (1-y) Intermediate cell 14 is positioned on first tunneling layer 13, and wherein y is a real number, and scope is 0＜y＜1, is preferably 0.002＜y＜0.02; Second tunneling layer 15 is positioned at GaN yAs (1-y)On the intermediate cell 14; Ga zIn (1-z)P top battery 16 is positioned on second tunneling layer 15, and wherein z is a real number, and scope is 0＜z＜1, is preferably 0.52＜z＜0.57; And contact layer 17 is positioned at Ga zIn (1-z)On the P top battery 16.
The energy gap of battery is less at the bottom of the general Ge, so the electric current that produces is bigger, the electric current that is produced with intermediate cell on it or top battery does not match.Present embodiment adopts Si xGe (1-x)End battery 12 improves the energy gap of end batteries, the currents match that electric current that end battery produces can be produced with intermediate cell or top battery.Douglas J Paul is in Advanced Materials, and 11 (3), once provided in p.191-204 and calculated Si xGe (1-x)The formula of energy gap, people such as F.M.Bulfer are in Journal Applied Physics, Vol.84, p.5597 No.10 once provided in the paper of being carried and calculated Si xGe (1-x)The formula of lattice constant, this two document is all quoted the part into the application.By formula E g(x)=and 0.74+1.27x, a 0(x)=5.6500996-0.2239666x+0.01967x 2, E wherein gRepresent energy gap, a 0Represent lattice constant, x is a real number, represents Si xGe (1-x)The content of middle Si.With x is 0.04 to be example, learns Si 0.04Ge 0.96The energy gap of end battery is about 0.791eV, and lattice constant is about
Figure B2009102063790D0000031
Draw GaN by Fig. 2 0.0092As 0.9908The lattice constant of intermediate cell is about , with Si 0.04Ge 0.96The lattice constant of end battery is complementary.In addition, Li Shichang provides in the paper of research of GaNAs material building crystal to grow and AlAs wet gasification film is carried by National Chiao Tung University electronics department of physics and calculates GaN yAs (1-y)The formula of energy gap, this document is quoted the part into the application.By formula E g(y)=1.424-15.7y+216y 2Draw GaN 0.0092As 0.9908The energy gap of intermediate cell is about 1.298eV, and y is a real number, represents GaN yAs (1-y)The content of middle N.Draw Ga via Fig. 2 equally 0.544In 456The lattice constant and the Si of P top battery 0.04Ge 0.96End battery and GaN 0.0092As 0.9908The lattice constant of intermediate cell is complementary.Moreover Prasanta Kumar Basu is in Theory of optical processes in semiconductors:bulk and microstructures, and tbl.4.2 provides in p.67 and calculates Ga zIn (1-z)The formula of P energy gap, this document is quoted the part into the application.By formula E g(z)=1.35+0.643z+0.786z 2Draw Ga 0.544In 456The energy gap of P top battery is about 1.847eV, and z is a real number, represents Ga zIn (1-z)The content of Ga among the P.Energy gap gap between each battery of present embodiment is less, and lattice constant is coupling, in regular turn from Si 0.04Ge 0.96Battery is to Ga at the end 0.544In 456The electric current that P top battery is produced also mates, and is about 19.21mA/cm respectively 2, 17.92mA/cm 2With 17.92mA/cm 2, so the energy conversion efficiency raising, as shown in Figure 3.
As shown in Figure 3, work as Si xGe (1-x)Si content increases in the end battery 12, and the energy conversion efficiency of solar cell can promote.When the Si content ratio was 4%, the energy conversion efficiency maximum was about 43.54%.
Substrate 10 can conduct electricity or heat conduction in order to support level battery structure thereon, and its material can be conductive material, for example is silicon (Si), germanium (Ge), GaAs (GaAs), indium phosphide (InP), SiGe (SiGe) or carborundum (SiC).Resilient coating 11 is in order to reduce Si xGe (1-x)The gap of lattice constant between end battery 12 and the substrate 10 reduces stress or strain, and its material for example is Si uGe (1-u)Or In uGa (1-u)P.First tunneling layer 13 and second tunneling layer 15 are in order to link Si xGe (1-x)End battery 12, GaN yAs (1-y) Intermediate cell 14 and Ga zIn (1-z)P top battery 16 also can transmit electric current, and its material for example is GaAs uN (1-u), In uGa (1-u)P or Al uGa (1-u) As.Contact layer 17 can reduce the series resistance between solar cell and metal electrode, and its material for example is In uGa (1-u)As or In uGa (1-u)P.Above-mentioned u is a real number, represents In uGa (1-u)As or In uGa (1-u)The content of In among the P, scope can be 0≤u≤1.
Only the foregoing description only is illustrative principle of the present invention and effect thereof, but not is used to limit the present invention.Any persond having ordinary knowledge in the technical field of the present invention all can be under the situation of know-why of the present invention and spirit, and the foregoing description is made amendment and changed.Therefore claims are listed as described later for the scope of the present invention.

Claims (10)

1. multi-junction solar cells comprises:
Si xGe (1-x)End battery, wherein x is a real number, and 0＜x＜1;
GaN yAs (1-y)Intermediate cell is positioned at this Si xGe (1-x)On the end battery, wherein y is a real number, and 0＜y＜1; And
Ga zIn (1-z)P top battery is positioned at this GaN yAs (1-y)On the intermediate cell, wherein z is a real number, and 0＜z＜1.
2. multi-junction solar cells as claimed in claim 1, wherein 0.005＜x＜0.065.
3. multi-junction solar cells as claimed in claim 1, wherein 0.002＜y＜0.02.
4. multi-junction solar cells as claimed in claim 1, wherein 0.52＜z＜0.57.
5. multi-junction solar cells as claimed in claim 1 also comprises substrate, is positioned at this Si xGe (1-x)Under the end battery, wherein this substrate comprises one or more the material that is selected from silicon (Si), germanium (Ge), GaAs (GaAs), indium phosphide (InP), SiGe (SiGe) and carborundum (SiC).
6. multi-junction solar cells comprises:
Si xGe (1-x)End battery, wherein x is a real number, and 0＜x＜1; And
GaN yAs (1-y)Intermediate cell is positioned at this Si xGe (1-x)On the end battery, wherein y is a real number, and 0＜y＜1.
7. multi-junction solar cells as claimed in claim 6, wherein 0.005＜x＜0.065.
8. multi-junction solar cells as claimed in claim 6, wherein 0.002＜y＜0.02.
9. multi-junction solar cells as claimed in claim 6 also comprises Ga zIn (1-z)P top battery is positioned at this GaN yAs (1-y)On the intermediate cell, wherein z is a real number, and 0＜z＜1.
10. multi-junction solar cells as claimed in claim 9, wherein 0.52＜z＜0.57.
CN 200910206379 2009-10-15 2009-10-15 Efficient solar battery Pending CN102044578A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103489952A (en) * 2012-06-14 2014-01-01 山东华光光电子有限公司 SiC substrate single solar cell epitaxy structure and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103489952A (en) * 2012-06-14 2014-01-01 山东华光光电子有限公司 SiC substrate single solar cell epitaxy structure and manufacturing method thereof
CN103489952B (en) * 2012-06-14 2016-01-06 山东浪潮华光光电子股份有限公司 A kind of SiC substrate single-unit solar cell epitaxial structure and preparation method thereof

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