CN102043330A - Method for manufacturing cylinder die core for nanoimprint - Google Patents
Method for manufacturing cylinder die core for nanoimprint Download PDFInfo
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- CN102043330A CN102043330A CN2009102053731A CN200910205373A CN102043330A CN 102043330 A CN102043330 A CN 102043330A CN 2009102053731 A CN2009102053731 A CN 2009102053731A CN 200910205373 A CN200910205373 A CN 200910205373A CN 102043330 A CN102043330 A CN 102043330A
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Abstract
The invention discloses a method for manufacturing a cylinder die core for nanoimprint. The method comprises the following steps of: providing a rolling shaft baseplate which is a cylinder and is provided with a curved surface; forming an inorganic photoresist layer on the curved surface of the rolling shaft baseplate; and radiating focused lasers on the inorganic photoresist layer by a laser exposure device so as to ensure that the inorganic photoresist layer in an exposure area generates phase variation, and removing the inorganic photoresist layer in a phase variation area so as to form a nano pattern on the rolling shaft baseplate.
Description
Technical field
The present invention relates to a kind of making of impression die of nano impression manufacture craft, and particularly relate to a kind of making of cylinder die of nano impression manufacture craft, be formed with nanometer pattern transferring (nano-imprint patterns) on it.
Background technology
Along with the fast development of 3C science and technology, semiconductor fabrication process and information recording media manufacture craft must constantly be dwindled live width (line width) or measuring point (recording pit) size, promote arithmetic speed and recording density.With the optical disc storage is example: the minimum record point length of DVD CD is about 400nm, and the smallest record point length of next generation CD is about 170nm.The live width of semiconductor fabrication process more is contracted to tens nanometer by hundreds of nanometers.
Therefore, in order to produce atomic little live width or measuring point accurately, that (Nanoimprint Lithography, NIL) the nanometer manufacture craft of technology is to obtain nano-scale patterns as nano-imprint lithography just develop.In the manufacture craft of the required mould with nanostructured pattern of nano imprint lithography, modal is exactly to adopt the use of beamwriter lithography (Electron Beam Lithorgraphy) technology and organic photoresist of arranging in pairs or groups and form nanostructured pattern on the die of plane.Yet, use equipment cost height, the photoetching making technology of electron beam lithography manufacturing nanostructured pattern time-consuming, and be unfavorable for making on the die of plane the making of large-area micro-nano pattern.
In addition, also can the formed micro nano structure pattern of electron beam lithography will be adopted, after utilizing the transfer printing mode to be formed at multi-disc flexible metal substrate, be attached on the roller bearing to form a cylinder die in the mode of fitting again, then reach the impression of large area micro-nano rice structure plan in the mode of roll-to-roll.Yet, owing to the multi-disc flexible metal substrate on the roller bearing that is attached at the cylinder die adopts the transfer printing mode to form respectively, so the accurate joint location between the nano-pattern on a little flexible metal substrate probably is difficult for reaching.Moreover the flexible metal substrate probably can form the seam of not expecting after the splicing on the cylinder die, thereby can't fully form nano-pattern on the whole curved surface of cylinder die.In addition, the doubt that these a little flexible metal substrates still have the hardness deficiency, so adopting the Roll-to-Roll mode when impressing the micro nano structure pattern on it, probably the damage of the micro nano structure pattern on the applied cylinder die be can cause, and then the fiduciary level and the serviceable life of cylinder die influenced along with the increase of service time and frequency.
Disclosed a kind of manufacture method of cylinder die in the I305753 TaiWan, China patent, its patterning on this plane die is transferred to push a plane die by impression cylinder on the curved surface that covers a cylindrical body structure on heating impression materials layer, and then finished the making of the cylinder die of impression usefulness.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method that is used for the cylinder die of nano impression, to address the above problem.
For reaching above-mentioned purpose, the invention provides a kind of manufacture method that is used for the cylinder die of nano impression, comprising:
One roller bearing substrate is provided, and wherein this roller bearing substrate is a right cylinder and has a curved surface; Form an inorganic photoresist layer on this curved surface of this roller bearing substrate; Use a laser explosure device, with this inorganic photoresist layer of laser radiation that focuses on, make this inorganic photoresist layer of exposure area produce transformation mutually, and this inorganic photoresist layer that removes the phase transition region, on this roller bearing substrate, to form a nano-pattern.
For above-mentioned and other purposes, feature of the present invention can be become apparent, a preferred embodiment cited below particularly, and cooperate appended diagram, be described in detail below:
Description of drawings
Figure 1A-1C has shown the manufacture method according to the cylinder die of one embodiment of the invention;
Fig. 1 D-1E has shown the manufacture method according to the cylinder die of another embodiment of the present invention;
Fig. 2 A-2D has shown the manufacture method according to the cylinder die of further embodiment of this invention; And
Fig. 3 A-3C has shown the manufacture method according to the cylinder die of another embodiment of the present invention.
The main element symbol description
100～roller bearing substrate;
102, the curved surface of 150～roller bearing substrate;
104～inorganic photoresist layer;
The phase change attitude of 104a～inorganic photoresist layer;
The initial state of 104b～inorganic photoresist layer;
The laser of 106～focusing;
108～laser explosure device;
110,110 '～nano-pattern;
110 "～the transfer nano-pattern;
112～metal level;
120～breach;
200～middle layer;
200a～patterned middle layer;
250,350～dry etch procedure.
Embodiment
Figure 1A-1C is a series of diagrammatic cross-sections, has shown the manufacture method according to the cylinder die of one embodiment of the invention.
Please refer to Figure 1A, a columned roller bearing substrate 100 at first is provided, its material for example is semiconductor material, glass material, plastic material or metal material.In one embodiment, semiconductor material for example is a silicon.Roller bearing substrate 100 is that a circle is lived body and had a curved surface 102.Then on the curved surface 102 of roller bearing substrate 100, form an inorganic photoresist layer 104.At this, the thickness of inorganic photoresist layer 104 is about 10～400nm, in one embodiment, is about 100～300nm.The inorganic photo anti-corrosion agent material of inorganic photoresist layer 104 is for example to be incomplete oxidation thing, metallized glass or the ZnS-SiO of the incomplete oxidation thing of phase-transition material, transition metal
2Material.So-called incomplete oxidation thing means that the oxygen content in the inorganic photoresist is lower than the stoichiometric oxygen content of the full oxide of phase-transition material or transition metal (stoichiometric oxygen content).In one embodiment, above-mentioned inorganic photo anti-corrosion agent material adopts general formula A
1-xO
xExpression, wherein A represents phase-transition material, and x is between 5at%～65at%.And in the present embodiment, employed phase-transition material for example is a kind of alloy that group constituted that is selected from following element: selenium (Se), single (Te), antimony (Sb), arsenic (As), tin (Sn), germanium (Ge) and indium (In), such as Ge-Sb-Te, Ge-Sb-Sn or In-Ge-Sb-Te alloy.Wherein, be example with the Ge-Sb-Sb alloy, when phase-transition material with general formula Ge
aSb
bSn
1-a-bDuring expression, a is about the about 10-50at% of 5-15at%, b.In another embodiment, above-mentioned inorganic photo anti-corrosion agent material adopts Formula B
1-xO
xExpression, wherein B represents transition metal, and 0＜x＜0.75.And in the present embodiment, comprise a kind of transition metal of Ti, V, Cr, Mn, Fe, Nb, Cu, Ni, Co, Mo, Ta, W, Zr, Ru and Ag in the inorganic photo anti-corrosion agent material at least.In another embodiment, above-mentioned inorganic photo anti-corrosion agent material then comprises the metallized glass material as magnesium-base metal glass material (Mg-based metallic glass materials).As for the incomplete oxidation thing that forms phase-transition material, the incomplete oxidation thing and the ZnS-SiO of transition metal
2The mode of the inorganic photoresist layer 104 of materials such as material is oxygen reaction sputter mode for example.And form the mode oxygen reaction sputter mode for example of the inorganic photoresist layer 104 of metallized glass.
Then, please refer to Figure 1B, use a cover laser explosure device 108, the inorganic photoresist layer 104 of laser 106 irradiations to focus on makes the inorganic photoresist layer 104 of exposure area change phase change attitude 104a into by initial state 104b.Above-mentioned laser explosure device can be the exposure device of photoetching making technology or the optical head laser direct-writing device of similar CD player, does not therefore need to spend extra equipment cost.Because inorganic photoresist layer 104 all has good absorption for red spectral band, visible light wave range and ultraviolet light wave band, so can use various wavelength lasers as exposure source, for example the LASER Light Source of numerous wave bands such as red spectral band, visible light wave range and ultraviolet light wave band.Laser power and time shutter when adjusting exposure can make inorganic photoresist layer 104 produce phase change, and the power of the laser 106 by shining inorganic photoresist layer 104 and the time shutter width that can adjust the nano-pattern of follow-up formation.In addition, argon gas and oxygen flow ratio when adjust forming inorganic photoresist layer 104 also can be adjusted the oxygen content of the oxide layer of phase-transition material.
Then, please refer to Fig. 1 C, remove the part (as the 104a of Figure 1B) that inorganic photoresist layer 104 changes the phase change attitude into, thereby on the curved surface 102 of roller bearing substrate 100, stayed by the initial state 104b of the inorganic photoresist layer part nano-pattern that forms 110, wherein nano-pattern 110 can be line width patterns (line pattern) or measuring point (recording pit).And removing of the phase change attitude 104a of above-mentioned inorganic photoresist layer 104 part can be by reaching as the etching solution of KOH or NaOH solution.
Shown in Fig. 1 C, finished the making of the cylinder die with nano-pattern of one embodiment of the invention substantially, the roller bearing substrate 100 that can then this be had nano-pattern 110 flatly is arranged on the impression microscope carrier (not shown) to carry out the roll-to-roll impression manufacture craft of nano-pattern 110.In the present embodiment, it is that exposure source and directly writing obtains that the making that is arranged on the nano-pattern on the cylinder die can be adopted the laser light of conventional lithography manufacture craft or CD player optical devices, have manufacture craft characteristics quick and with low cost, thereby can on the curved surface of cylinder die, produce no seam, position precisely with the nano-pattern of high aggregation degree, and and then the curved surface of the cylinder die that makes full use of and having exempted as the use of other impressions of plane die with devices.Moreover the inorganic photoresist layer material of formation nano-pattern has sufficient intensity and is difficult for causing its damage along with the frequency of utilization lifting.Therefore the prepared cylinder die that goes out of present embodiment can be widely used in and adopt the roll-to-roll mode to impress the required large-area nano impression manufacture craft of semiconductor element, recording medium, magnetic element and display element.
Fig. 1 D-1E is a series of diagrammatic cross-sections, has shown the manufacture method according to the cylinder die of another embodiment of the present invention.
Please refer to Fig. 1 D, can further process the cylinder die shown in Fig. 1 C, implement the long-pending program (not shown) in a selectivity Shen, it for example is an electroforming program, to form a metal level 112 on the curved surface 102 of the roller bearing substrate 100 that is exposed for the initial state 104b part of inorganic photoresist layer, wherein the material of metal level 112 for example is selected from the metal of nickel, tungsten or its alloy.
Please refer to Fig. 1 E, then remove the initial state 104b part of inorganic photoresist layer, on the curved surface 102 of roller bearing substrate 100, to form the nano-pattern 110 ' that is constituted by metal level 112.At this, nano-pattern 110 ' is the reverse pattern of the nano-pattern 100 shown in Fig. 1 C, and it can be line width patterns (line pattern) or measuring point (recording pit).And above-mentioned inorganic photoresist layer remove mode for example be with a kind of etching solution with the initial state 104b of inorganic photoresist rete dissolving, wherein etching solution for example is KOH, HNO
3Or aqueous solution such as HF.
Fig. 2 A-2D has shown the manufacture method according to the cylinder die of another embodiment of the present invention, and wherein use and previous embodiment components identical symbol are to represent components identical.
Please refer to Fig. 2 A, on the curved surface 102 of roller bearing substrate 100, form one deck middle layer 200 earlier, then on middle layer 200, form inorganic photoresist layer 104.Middle layer 200 can be that one deck can reduce the rete radiating rate, improves the hot barrier layer or an etching stopping layer of exposure sensitivity, and its material can be Al
2O
3, AlN, SiC, SiO
2, Si
3N
4, ZnS-SiO
2Or high-molecular organic material.The thickness in middle layer 200 can adjust according to the element demand.
Please refer to Fig. 2 B, then use a cover laser explosure device 108, the inorganic photoresist layer 104 of laser 106 irradiations to focus on makes the inorganic photoresist layer 104 of exposure area change phase change attitude 104a into by initial state 104b.
Please refer to Fig. 2 C, then remove the part (as the 104a of Fig. 2 B) that inorganic photoresist layer changes the phase change attitude into and stop at 200 places, middle layer, so that on inorganic photoresist rete 104, form nano-pattern 110 with a plurality of breach 120.Then, the initial state 104b that adopts inorganic photoresist layer is as etch mask, and implement a dry etch procedure 250 and carry out etching with roller bearing substrate 100 with the middle layer 200 that a little breach 120 are for this reason exposed, wherein dry etch procedure comprises reactive ion etching (reactive ion etching, RIE) or inductively coupled plasma (inductive coupling plasma, ICP) etching.Then remove the initial state 104b part middle layer 200a part patterned of inorganic photoresist layer, nano-pattern 110 is transferred in the roller bearing substrate 100 and becomes transfer nano-pattern 110 with identical patterns with its below ", shown in Fig. 2 D.At this, owing to shift nano-pattern 110 " setting, roller bearing substrate 100 has the curved surface 150 of concaveconvex structure this moment, but not the curved surface 102 of the slyness shown in Fig. 2 A.
Shown in Fig. 2 D, making according to the cylinder die with nano-pattern of one embodiment of the invention is just finished substantially, can then this be had and shift nano-pattern 110 " roller bearing substrate 100 flatly be arranged on the impression microscope carrier (not shown), to shift nano-pattern 110 " roll-to-roll impression manufacture craft.In the present embodiment, it is that exposure source and directly writing obtains that the making that is used to prepare the nano-pattern that is integrated in the transfer nano-pattern in the cylinder die can be adopted the laser light of conventional lithography manufacture craft or CD player optical devices, have manufacture craft characteristics quick and with low cost, thereby can in the cylinder die, produce no seam, position precisely with the nano-pattern of high aggregation degree, and and then the curved surface of the cylinder die that makes full use of and having exempted as the use of other impressions of plane die with devices.Moreover the roller bearing substrate of formation transfer nano-pattern has sufficient intensity and is difficult for causing its damage along with the frequency of utilization lifting.Therefore the prepared cylinder die that goes out of present embodiment can be widely used in and adopt the roll-to-roll mode to impress the required large-area nano impression manufacture craft of semiconductor element, recording medium, magnetic element and display element.
Fig. 3 A-3C has shown the manufacture method according to the cylinder die of further embodiment of this invention, wherein uses and previous embodiment components identical symbology components identical.
Please refer to Fig. 3 A, at first on roller bearing substrate 100, form inorganic photoresist layer 104.Then use a cover laser explosure device 108, the inorganic photoresist layer 104 of laser 106 irradiations to focus on makes the inorganic photoresist layer 104 of exposure area change phase change attitude 104a into by initial state 104b.
Then, please refer to Fig. 3 B, remove the part (as the 104a of Fig. 2 B) that changes the phase change attitude in the inorganic photoresist layer into, on inorganic photoresist layer 104, to form nano-pattern 110 with a plurality of breach 120.After forming nano-pattern 110, the person of connecing adopts inorganic photoresist layer 104 as etch mask, and implement a dry etch procedure 350 and carry out etching with the roller bearing substrate 100 that a little breach 120 are for this reason exposed, wherein dry etch procedure comprises reactive ion etching (reactive ion etching, RIE) or inductively coupled plasma (inductive coupling plasma, ICP) etching.Then, remove initial state 104 parts of inorganic photoresist layer, nano-pattern 110 among Fig. 3 B is transferred in the roller bearing substrate 100 and becomes the transfer nano-pattern 110 of identical patterns ", shown in Fig. 3 C.At this, owing to shift nano-pattern 110 " setting, roller bearing substrate 100 has the curved surface 150 of concaveconvex structure this moment, but not the curved surface 102 of slyness as shown in Figure 3A.
Shown in Fig. 3 C, making according to the cylinder die with nano-pattern of one embodiment of the invention is just finished substantially, can then this be had nano-pattern 110 " roller bearing substrate 100 flatly be arranged on the impression microscope carrier (not shown), to shift nano-pattern 110 " roll-to-roll impression manufacture craft.In the present embodiment, it is that exposure source and directly writing obtains that the making that is used to prepare the nano-pattern that is integrated in the transfer nano-pattern in the cylinder die can be adopted the laser light of conventional lithography manufacture craft or CD player optical devices, has manufacture craft advantage quick and with low cost, thereby can in the cylinder die, produce no seam, position precisely with the nano-pattern of high aggregation degree, and and then the curved surface of the cylinder die that makes full use of and having exempted as the use of other impressions of plane die with devices.Moreover the roller bearing substrate of formation transfer nano-pattern has sufficient intensity and is difficult for causing its damage along with the frequency of utilization lifting.Therefore the prepared cylinder die that goes out of present embodiment can be widely used in and adopt the roll-to-roll mode to impress the required large-area nano impression manufacture craft of semiconductor element, recording medium, magnetic element and display element.
In the above-described embodiments, the characteristic that can effectively significantly dwindle the laser explosure luminous point by the thermally writing type photoetching of inorganic photoresist reaches the effect of similar near field optic photoetching, utilizes this characteristic to spend the structure plan that can inscribe out nano-scale under the cheap situation at cost.Moreover, in the above-described embodiments, the invention provides and adopt LASER Light Source directly to write the manufacture method of cylinder die with the cylinder die that forms nanostructured pattern thereon, after optical head directly is written on inorganic photoresist and etching, impression can be directly after embossed layer or electroforming, removed, thereby continuous and jointless large area micro-nano rice structure plan can be obtained.The rigidity of the inorganic photoresist layer that the present invention in addition developed is than flexible metal substrate height, but also the electroforming high-strength alloy is more suitable for the surface as the cylinder die as transfer printing layer.Moreover the use of traditional organic photoresist can't be coated on the cylinder die uniformly and can't overcome the diffraction limit, so adopts the method for the formed inorganic photoresist layer of sputter mode to help overcoming the problems referred to above in the foregoing description.
Though disclosed the present invention in conjunction with above preferred embodiment; yet it is not in order to limiting the present invention, anyly is familiar with this operator, without departing from the spirit and scope of the present invention; can be used for a variety of modifications and variations, thus protection scope of the present invention should with enclose claim was defined is as the criterion.
Claims (22)
1. manufacture method that is used for the cylinder die of nano impression comprises:
One roller bearing substrate is provided, and wherein this roller bearing substrate is a right cylinder and has a curved surface;
Form an inorganic photoresist layer on this curved surface of this roller bearing substrate;
Use a laser explosure device,, make this inorganic photoresist layer of exposure area produce transformation mutually with this inorganic photoresist layer of laser radiation that focuses on; And
Remove this inorganic photoresist layer of phase transition region, on this roller bearing substrate, to form a nano-pattern.
2. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 1, the wherein power of the laser by shining this inorganic photoresist layer and the time shutter width that can adjust this nano-pattern.
3. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 1, wherein the wavelength of this laser explosure device comprises red spectral band, visible light wave range, blue wave band or ultraviolet light wave band.
4. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 1, the method that wherein removes this inorganic photoresist layer of phase transition region comprise uses an etching solution this inorganic photoresist layer dissolving with the phase change attitude.
5. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 4, wherein this etching solution comprises KOH or NaOH solution.
6. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 1, wherein the material of this roller bearing substrate comprises silicon, glass, plastic cement or metal.
7. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 1 wherein after forming this nano-pattern, also comprises:
Be formation one metal level on this curved surface of this roller bearing substrate that this nano-pattern exposed; And
Remove this nano-pattern, on this curved surface of this roller bearing substrate, stay a reverse nano-pattern that constitutes by this metal level.
8. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 7, the method that wherein forms this metal level comprises electroforming.
9. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 7, wherein this metal level comprises nickel, tungsten or its alloy.
10. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 1 wherein before forming this inorganic photoresist layer on this roller bearing substrate, also is included in and forms a middle layer on this roller bearing substrate.
11. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 10, wherein this middle layer is a hot barrier layer or an etching stopping layer.
12. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 10, wherein the material in this middle layer comprises Al
2O
3, AlN, SiC, SiO
2, Si
3N
4, ZnS-SiO
2Or high-molecular organic material.
13. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 10 wherein after forming this nano-pattern, also comprises:
With this nano-pattern is the cover curtain, implements a dry ecthing manufacture craft etching is carried out in this middle layer and this roller bearing substrate; And
Remove this nano-pattern and this middle layer, in this roller bearing substrate, stay one and shift nano-pattern.
14. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 13, wherein this dry etch procedure comprises reactive ion etching or induced electricity coupling plasma etching.
15. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 1 wherein after forming this nano-pattern, also comprises:
With this nano-pattern is etch mask, implements a dry ecthing manufacture craft with this roller bearing substrate of etching; And
Remove this nano-pattern, in this roller bearing substrate, stay one and shift nano-pattern.
16. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 15, wherein this dry etch procedure comprises reactive ion etching or induced electricity coupling plasma etching.
17. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 1, wherein this inorganic photoresist layer comprises an incomplete oxidation thing of phase-transition material, an incomplete oxidation thing, metallized glass or the ZnS-SiO of transition metal
2Material.
18. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 17, wherein the general formula of this incomplete oxidation thing is A
1-xO
x, wherein A represents this phase-transition material, and x is between 5at%～65at%.
19. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 18, wherein this phase-change material layer is a kind of alloy that group constituted that is selected from following element: selenium (Se), single (Te), antimony (Sb), arsenic (As), tin (Sn), germanium (Ge) and indium (In).
20. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 19, wherein this phase-change material layer comprises Ge-Sb-Te, Ge-Sb-Sn or In-Ge-Sb-Te alloy.
21. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 17, wherein this inorganic photoresist layer comprises an incomplete oxidation thing of transition metal.
22. the manufacture method that is used for the cylinder die of nano impression as claimed in claim 21, wherein the general formula of this incomplete oxidation thing is B
1-xO
x, wherein B represents this transition metal, and 0＜x＜0.75.
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| CN2009102053731A CN102043330A (en) | 2009-10-21 | 2009-10-21 | Method for manufacturing cylinder die core for nanoimprint |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102053731A CN102043330A (en) | 2009-10-21 | 2009-10-21 | Method for manufacturing cylinder die core for nanoimprint |
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ID=43909593
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102866579A (en) * | 2012-09-26 | 2013-01-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for manufacturing rotary drum pressing die based on dynamic nano engraving technology |
| CN106356280A (en) * | 2015-07-13 | 2017-01-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for orientation growth of ordered quantum dot array by template |
| CN110018612A (en) * | 2018-01-10 | 2019-07-16 | 长春工业大学 | A kind of nano-imprinting device preparing complex micro structure |
| CN113146153A (en) * | 2021-04-08 | 2021-07-23 | 新沂崚峻光电科技有限公司 | Manufacturing method of embossing template and embossing template |
-
2009
- 2009-10-21 CN CN2009102053731A patent/CN102043330A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102866579A (en) * | 2012-09-26 | 2013-01-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for manufacturing rotary drum pressing die based on dynamic nano engraving technology |
| CN102866579B (en) * | 2012-09-26 | 2014-06-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for manufacturing rotary drum pressing die based on dynamic nano engraving technology |
| CN106356280A (en) * | 2015-07-13 | 2017-01-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for orientation growth of ordered quantum dot array by template |
| CN110018612A (en) * | 2018-01-10 | 2019-07-16 | 长春工业大学 | A kind of nano-imprinting device preparing complex micro structure |
| CN110018612B (en) * | 2018-01-10 | 2024-05-28 | 长春工业大学 | Nanometer stamping device capable of preparing complex microstructure |
| CN113146153A (en) * | 2021-04-08 | 2021-07-23 | 新沂崚峻光电科技有限公司 | Manufacturing method of embossing template and embossing template |
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Application publication date: 20110504 |