CN102042887B - 矩形硅薄膜微机电压力传感器 - Google Patents
矩形硅薄膜微机电压力传感器 Download PDFInfo
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CN2010105015490A CN102042887B (zh) | 2010-09-29 | 2010-09-29 | 矩形硅薄膜微机电压力传感器 |
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CN102042887A CN102042887A (zh) | 2011-05-04 |
CN102042887B true CN102042887B (zh) | 2012-05-23 |
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US10481023B2 (en) * | 2014-01-30 | 2019-11-19 | Hitachi Automotive Systems, Ltd. | Mechanical quantity measuring device and sensor unit |
CN109341514A (zh) * | 2018-12-11 | 2019-02-15 | 中国地质大学(武汉) | 一种新型电阻应变片及应变测量方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US6686634B2 (en) * | 2001-08-22 | 2004-02-03 | Denso Corporation | Semiconductor device and a method of producing the same |
CN2767983Y (zh) * | 2004-12-24 | 2006-03-29 | 中国石油天然气集团公司 | 多功能硅压阻复合传感器 |
US7508040B2 (en) * | 2006-06-05 | 2009-03-24 | Hewlett-Packard Development Company, L.P. | Micro electrical mechanical systems pressure sensor |
CN101520350A (zh) * | 2009-03-24 | 2009-09-02 | 无锡市纳微电子有限公司 | 一种改良型高灵敏度微压力传感器芯片制作工艺 |
CN201803819U (zh) * | 2010-09-29 | 2011-04-20 | 东南大学 | 基于热损失工作方式的矩形硅薄膜微机电压力传感器 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US6686634B2 (en) * | 2001-08-22 | 2004-02-03 | Denso Corporation | Semiconductor device and a method of producing the same |
CN2767983Y (zh) * | 2004-12-24 | 2006-03-29 | 中国石油天然气集团公司 | 多功能硅压阻复合传感器 |
US7508040B2 (en) * | 2006-06-05 | 2009-03-24 | Hewlett-Packard Development Company, L.P. | Micro electrical mechanical systems pressure sensor |
CN101520350A (zh) * | 2009-03-24 | 2009-09-02 | 无锡市纳微电子有限公司 | 一种改良型高灵敏度微压力传感器芯片制作工艺 |
CN201803819U (zh) * | 2010-09-29 | 2011-04-20 | 东南大学 | 基于热损失工作方式的矩形硅薄膜微机电压力传感器 |
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Effective date of registration: 20140813 Address after: 226623 Haian City, Jiangsu Province Town Industrial Park Patentee after: Jiangsu TianPeng Electromechanical Co., Ltd. Patentee after: Southeast University Address before: 210096 Jiangsu city Nanjing Province four pailou No. 2 Patentee before: Southeast University |