CN102041483A - 低压化学气相沉积设备以及低压化学气相沉控制方法 - Google Patents
低压化学气相沉积设备以及低压化学气相沉控制方法 Download PDFInfo
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- CN102041483A CN102041483A CN2011100091115A CN201110009111A CN102041483A CN 102041483 A CN102041483 A CN 102041483A CN 2011100091115 A CN2011100091115 A CN 2011100091115A CN 201110009111 A CN201110009111 A CN 201110009111A CN 102041483 A CN102041483 A CN 102041483A
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CN2011100091115A CN102041483A (zh) | 2011-01-17 | 2011-01-17 | 低压化学气相沉积设备以及低压化学气相沉控制方法 |
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CN2011100091115A CN102041483A (zh) | 2011-01-17 | 2011-01-17 | 低压化学气相沉积设备以及低压化学气相沉控制方法 |
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CN2011100091115A Pending CN102041483A (zh) | 2011-01-17 | 2011-01-17 | 低压化学气相沉积设备以及低压化学气相沉控制方法 |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US5948169A (en) * | 1998-03-11 | 1999-09-07 | Vanguard International Semiconductor Corporation | Apparatus for preventing particle deposition in a capacitance diaphragm gauge |
JP2003247075A (ja) * | 2001-12-20 | 2003-09-05 | Tanaka Kikinzoku Kogyo Kk | Lpcvd装置及び薄膜製造方法 |
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2011
- 2011-01-17 CN CN2011100091115A patent/CN102041483A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5948169A (en) * | 1998-03-11 | 1999-09-07 | Vanguard International Semiconductor Corporation | Apparatus for preventing particle deposition in a capacitance diaphragm gauge |
JP2003247075A (ja) * | 2001-12-20 | 2003-09-05 | Tanaka Kikinzoku Kogyo Kk | Lpcvd装置及び薄膜製造方法 |
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ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140505 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20140505 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110504 |
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RJ01 | Rejection of invention patent application after publication |