CN102033330B

CN102033330B - High speed optical shutter and method of operating thereof and optical devices

Info

Publication number: CN102033330B
Application number: CN201010157817.1A
Authority: CN
Inventors: 朴勇和; 亚历山大·戈雷洛夫; 斯塔尼斯拉夫·施蒂科夫; 亚历山大·希兰科夫
Original assignee: Samsung Electronics Co Ltd
Current assignee: Samsung Electronics Co Ltd
Priority date: 2009-09-25
Filing date: 2010-03-31
Publication date: 2016-01-20
Anticipated expiration: 2030-03-31
Also published as: JP2011070155A; CN102033330A; JP5788642B2

Abstract

The invention provides a kind of high speed optical shutter and method of operating thereof and optical devices.This optical shutter comprises the transparent electro-optical medium of reactive solid, and this electro-optical medium has total internal reflection surface, and in this total internal reflection surface, alinternal reflection angle is changed by external action.The transparent electro-optical medium prism that can be alinternal reflection angle be changed by external action or prism array.Before travel path of incident light change unit can also be arranged in transparent electro-optical medium.In addition, can also arrange that light path altering unit makes light vertical incidence through electro-optical medium on incident target object.

Description

High speed optical shutter and method of operating thereof and optical devices

Technical field

One exemplary embodiment included by the disclosure relates to optical device, more specifically, relates to a kind of high speed optical shutter, operates the method for this high speed optical shutter and comprises the optical devices of this high speed optical shutter.

Background technology

For being the important optical module be widely used in camera head and display device according to the optical shutter of control signal transmission or stop optical imagery, described camera head comprises camera, and described display device comprises liquid crystal display (LCD) device.

Recently, the research of three-dimensional (3D) camera to the range information for obtaining object or laser radar (LADAR) technology is being carried out.About this, 3D camera and LADAR technology measure distance between camera head and target by utilizing the flight time (time-of-flight, TOF) of light.

Shading light pulse (shutteredlightpulse, SLP) method in various TOF method comprises: to the light of objective emission specific wavelength; Block the optical imagery of this wavelength that (shuttering) reflects from target; Image is obtained by image device; Carry out this process a series of; And obtain range information thus.In order to distinguish multiple to apart from corresponding light traveling time, SLP method needs to comprise no-delay gate operation, and the operation of this no-delay gate has the opening and closing switching time being less than several nanosecond (ns).For this reason, image intensifier or semiconductor-based optical shutter has been proposed as high speed optical image shutter.

But image intensifier is expensive equipment, needs high voltage and Vacuum Package.In addition, although semiconductor-based optical shutter can overcome the operation of image intensifier and structural shortcoming, but compare with light emitting diode (LED) device with the photodiode used in correlation technique, semiconductor-based optical shutter to be manufactured in GaAs substrate by semiconductor fabrication process and to have complicated structure, therefore consider price and manufacture difficulty, semiconductor-based optical shutter comparatively can be difficult to commercialization.

Meanwhile, the optical modulating device of electrooptical effect (electro-opticaleffect) is used to comprise Kerr cell (Kerrcell) and Pockers cell (Pockelcell) according to correlation technique.Use the optical modulating device of electrooptical material to have the response speed of several GHz, be therefore used in waveguide in high speed optical communication.

In optical modulating device, by lithium niobate (LiNbO ₃) etc. the polarization characteristic of nonlinear crystal that formed change according to given electric field.That is, by utilizing external electric field to control polarization angle, optical modulating device has shutter function with transmission or stop polarized incident light.

Summary of the invention

The invention provides the method and apparatus for optical shutter, this optical shutter can carry out high-speed shutter operation.

The invention provides the method for this optical shutter of operation.

The invention provides the method and apparatus of the optical devices for comprising this optical shutter.

Other side will part be set forth in the following description, and partly will become obvious from this description, or can by putting into practice the one exemplary embodiment and comprehension that provide.

According to an aspect of one exemplary embodiment, optical shutter comprises electro-optical medium, and this electro-optical medium is transparent, is in reactive solid, and has total internal reflection surface, is changed by external action at this total internal reflection surface place alinternal reflection angle.

Optical shutter can also comprise light path altering unit, for making light vertical incidence through electro-optical medium at incident target object.

Optical shutter can also comprise the travel path of incident light before being arranged in electro-optical medium and change unit.

Each in electro-optical medium and light path altering unit can comprise prism or prism array.

The prism of electro-optical medium and the prism of light path altering unit can be of similar shape, and can be mutually symmetrical with arranging.

The prism array of electro-optical medium and the prism array of light path altering unit can comprise multiple microprism respectively, can arrange that the prism array of electro-optical medium and the prism array of light path altering unit make each xsect in multiple microprisms of electro-optical medium can be symmetrical with each xsect in multiple microprisms of light path altering unit.

The gap with uniform thickness can be present between electro-optical medium and light path altering unit on the travel path of light.Here, this gap can be less than the optical medium filling of air, prism or prism array by refractive index.

On the surface that light absorping film can be attached to the prism of electro-optical medium or on a surface of the prism array of electro-optical medium, this surface can represent the incident surface thereon of total reflection light.

It can be lens unit that travel path of incident light changes unit, and this lens unit makes this incident light be incident on electro-optical medium as directional light for the travel path changing the incident light entering into travel path of incident light change unit.

Electro-optical medium can be prism or prism array, and incident light is totally reflected or transmission by this prism or prism array by external action.

The light incident surface of prism or the light incident surface being included in the microprism in prism array can tilt relative to incident light.

Prism array can comprise the microprism of multiple bar shaped or the microprism of multiple annular.

This external action can represent the electric field formed by applying voltage.

Light absorping film can be attached on the prism of light path altering unit or the surface not on the travel path of light of prism array.

Electro-optical medium can relative to incident target object tilt, and the light launched from this electro-optical medium incides this incident target object.

According to the another aspect of one exemplary embodiment, a kind of method of operating optical shutter comprises following operation: apply voltage to electro-optical medium, change the alinternal reflection angle of this electro-optical medium thus.

The method can also comprise following operation: apply voltage continuously to this electro-optical medium, continuously change the alinternal reflection angle of this electro-optical medium thus.

The waveform of voltage can be square wave or sine wave, and is not limited to square wave or sine wave.

Electro-optical medium can be prism or prism array.

Angle is determined in the total internal reflection that the incident angle being incident on the light on electro-optical medium can be less than electro-optical medium, and can be greater than the minimum alinternal reflection angle formed by applying voltage.

Angle is determined in the total internal reflection that the incident angle being incident on the light on electro-optical medium can be greater than electro-optical medium, and can be less than the maximum alinternal reflection angle formed by applying voltage.

The alinternal reflection angle of electro-optical medium can reduce by applying voltage.

The alinternal reflection angle of electro-optical medium can increase by applying voltage.

According to the another aspect of one exemplary embodiment, optical devices comprise optical shutter.These optical devices can be the range-finder cameras comprising three-dimensional (3D) camera, or can be liquid crystal display (LCD).

In another one exemplary embodiment, a kind of optical devices comprise: refracting element, there is at least two refractive indexes, one at least two refractive indexes described in this refracting element has when the first input is received, another at least two refractive indexes described in having when the second input is received; And imageing sensor, can operate to receive and be refracted element refraction and the light of transmission, wherein when the first input is received, light reflects to imageing sensor by refracting element, and when the second input is received, light reflects away from imageing sensor by refracting element.

In such optical devices, refracting element comprises optical input surface and light output surface, and one of the optical input surface of refracting element and light output surface tilt and out of plumb relative to being refracted the light that element receives.

Accompanying drawing explanation

These and/or other side will become obvious below in conjunction with the description of accompanying drawing to one exemplary embodiment and are easier to understand, in accompanying drawing:

Fig. 1 is the sectional view of the structure of the optical shutter illustrated according to one exemplary embodiment;

Fig. 2 is the figure of structure of the alinternal reflection angle control medium illustrating as Fig. 1 optical shutter when corresponding to total internal reflection prism;

Fig. 3 be illustrate alternate figures 2 total internal reflection prism and adopt the figure of the structure of the optical shutter of dissimilar prism;

Fig. 4 is the figure of the optical shutter of Fig. 2 according to another one exemplary embodiment, and this optical shutter comprises light path altering unit;

Fig. 5 is the figure of the optical shutter of Fig. 3 according to another one exemplary embodiment, and this optical shutter comprises light path altering unit;

Fig. 6 is the figure of the optical shutter according to another one exemplary embodiment, and this optical shutter path comprised for changing incident light makes this incident light become the unit of directional light, and wherein incident light beam strikes is on the light incident surface of alinternal reflection angle control medium;

Fig. 7 is the figure of the optical shutter of Fig. 4 according to another one exemplary embodiment, and this optical shutter comprises travel path of incident light and changes unit;

Fig. 8 is the figure of the optical shutter of Fig. 3 according to another one exemplary embodiment, and this optical shutter also comprises travel path of incident light and changes unit;

Fig. 9 is the figure of the optical shutter of Fig. 5 according to another one exemplary embodiment, and this optical shutter also comprises travel path of incident light and changes unit;

Figure 10 A is the figure of the optical shutter according to another one exemplary embodiment, and this optical shutter comprises the array of multiple alinternal reflection angle control medium, and the total internal reflection prism of Fig. 2 is used as unit in the array;

Figure 10 B is the planimetric map of first prism array of Figure 10 A;

Figure 11 is the sectional view that the second prism array is arranged in the situation between the first prism array of the optical shutter of Figure 10 A and imageing sensor;

Figure 12 is the sectional view of the optical shutter of Figure 10 A, also travel path of incident light is changed cell layout on the light incident surface of the first substrate;

Figure 13 is the sectional view of the optical shutter of Figure 11, also travel path of incident light is changed cell layout on the light incident surface of the first substrate;

Figure 14 A, Figure 14 B and Figure 14 C are the figure of the optical shutter comprising the prism array formed by multiple microprism according to another one exemplary embodiment;

Figure 15 is the sectional view of the optical shutter of Figure 14, also travel path of incident light is changed cell layout before prism array;

Figure 16 is the sectional view of the optical shutter of Figure 14, is also arranged between prism array and imageing sensor by the 4th prism array;

Figure 17 is the sectional view of the optical shutter of Figure 16, also travel path of incident light is changed cell layout before prism array;

Figure 18 A and Figure 18 B is the figure of the optical shutter comprising the prism array formed by multiple microprism according to another one exemplary embodiment;

Figure 19 is the figure of the optical shutter comprising the prism array formed by multiple microprism according to another one exemplary embodiment;

Figure 20 is the sectional view of the optical shutter of Figure 18, also travel path of incident light is changed cell layout before prism array;

Figure 21 is the sectional view of the optical shutter of Figure 19, also travel path of incident light is changed cell layout before prism array;

Figure 22 A and Figure 22 B is the figure of the optical shutter according to another one exemplary embodiment;

Figure 23 is the sectional view of the optical shutter of Figure 22, also travel path of incident light is changed cell layout before the 6th prism array;

Figure 24 A and Figure 24 B is the figure comprising the optical shutter of the prism array formed by multiple microprism according to another one exemplary embodiment;

Figure 25 is the sectional view of the optical shutter of Figure 24, also travel path of incident light is changed cell layout before the 8th prism array;

Figure 26 is the figure of the realistic model according to another one exemplary embodiment;

Figure 27 is the equivalent circuit diagram of the realistic model about Figure 26;

Figure 28 illustrates that the voltage about the realistic model of Figure 26 applies the curve map of the relation between transmissivity;

Figure 29 is the curve map that time response is shown, the rise time applied about voltage when namely voltage is applied to realistic model;

Figure 30 to Figure 35 is the curve map of the shutter speed illustrated according to the voltage type being applied to realistic model; And

Figure 36 is the figure of the optical devices comprising optical shutter according to one exemplary embodiment.

Embodiment

Now by consult and use in detail alinternal reflection angle control medium optical shutter, operate the method for this optical shutter and comprise the one exemplary embodiment of device of this optical shutter, its example is shown in the drawings.In the accompanying drawings, in order to clear, the thickness in layer and region is exaggerated.

Fig. 1 is the sectional view of the structure of the optical shutter illustrated according to one exemplary embodiment.

With reference to Fig. 1, the reactive solid medium 30 for controlling alinternal reflection angle can be comprised according to the optical shutter of this one exemplary embodiment.Reactive solid medium 30 (at hereinafter referred to as alinternal reflection angle control medium 30) for controlling alinternal reflection angle can have total internal reflection surface, is changed by external action (namely, inputting) at this surface alinternal reflection angle.Alinternal reflection angle control medium 30 can be comprise lithium niobate (LiNbO ₃), KTN (KTa _xln _1-xo ₃) etc. material, it has electrooptical effect.The shape of the alinternal reflection angle control medium 30 in Fig. 1 can be symbolistic shape.External action can affect the crystal property of alinternal reflection angle control medium 30.The example of crystal property can be the refractive index characteristic of alinternal reflection angle control medium 30.Due to external action, what the alinternal reflection angle of alinternal reflection angle control medium 30 can become the total internal reflection being less than alinternal reflection angle control medium 30 determines angle (fixedangle).

The angle of determining of total internal reflection represents unique angle (uniqueangle) when not applying external action in the total internal reflection at the total internal reflection surface S1 place of alinternal reflection angle control medium 30.Therefore, the unique angle of the total internal reflection of alinternal reflection angle control medium 30 can change according to the material forming alinternal reflection angle control medium 30.

External action can be electric field.Electric field be formed in there is electric potential difference therebetween two electrodes between.Therefore, by alinternal reflection angle control medium 30 is arranged on there is electric potential difference two electrodes between, electric field can be applied to alinternal reflection angle control medium 30.Two electrodes can be arranged in light incident surface and the light exit surface of alinternal reflection angle control medium 30.It other things except electric field can also be used, as long as can change the crystal property of alinternal reflection angle control medium 30.External action can regulate according to the time.Like this, external action can continuously change, and correspondingly, the alinternal reflection angle of alinternal reflection angle control medium 30 also can continuously change.

The light launched from the optical shutter comprising alinternal reflection angle control medium 30 can be incident on imageing sensor 35.Imageing sensor 35 can be charge-coupled image sensor (CCD), complementary metal oxide semiconductor (CMOS) (CMOS) sensor, maybe the optical imagery received from alinternal reflection angle control medium 30 can be converted to any optical sensor of electric signal, and imageing sensor 35 can export electric signal.

In FIG, L represents the incident light entering alinternal reflection angle control medium 30.The incident angle being incident on the incident light L on total internal reflection surface S1 can be fixed to given angle (givenangle).Here, when alinternal reflection angle control medium 30 alinternal reflection angle according to the size of external action (namely, amount) and become be less than total internal reflection determine angle time, angle is determined in the total internal reflection that the incident angle of incident light L can be less than alinternal reflection angle control medium 30, but can be greater than the minimum alinternal reflection angle be formed in by external action in alinternal reflection angle control medium 30.

On the other hand, when the alinternal reflection angle of alinternal reflection angle control medium 30 to become according to the size of external action be greater than total internal reflection determine angle time, what the incident angle of incident light L can be greater than the total internal reflection of alinternal reflection angle control medium 30 determines angle, but can be less than the maximum alinternal reflection angle be formed in by external action in alinternal reflection angle control medium 30.

In FIG, Lt represents that (that is, when external action occurs or do not occur) is not totally reflected but the light be partially refracted at the total internal reflection surface S1 place of alinternal reflection angle control medium 30 when alinternal reflection angle control medium 30 is in shutter opening state.Refract light Lt is incident on imageing sensor 35.Therefore, refract light Lt has the information that will be actually measured or obtain.In FIG, Lr represents when alinternal reflection angle control medium 30 is in shutter close state (namely, when the alinternal reflection angle of alinternal reflection angle control medium 30 at total internal reflection surface S1 place by external action become be less than total internal reflection determine angle time) light that is totally reflected at the total internal reflection surface S1 place of alinternal reflection angle control medium 30.

Fig. 2 is the figure of the alinternal reflection angle control medium 30 illustrating as Fig. 1 structure of optical shutter when corresponding to total internal reflection prism 40.

With reference to Fig. 2, total internal reflection prism 40 can be the prism at band right angle.The inclined surface 40S2 of total internal reflection prism 40 represents total internal reflection surface.Incident light 40L is perpendicular to the light incident surface 40S1 of total internal reflection prism 40.Imageing sensor 42 can be arranged as in the face of the inclined surface 40S2 as total internal reflection surface.Imageing sensor 42 can be arranged in incident light 40L accessible position after inclined surface 40S2 place is refracted.Such as, imageing sensor 42 can be arranged in refract light 40T can vertical incidence position thereon.Imageing sensor 42 can be arranged in refract light 40T can with incident angles position thereon, and here, refractive light paths changes unit and can be arranged between total internal reflection prism 40 and imageing sensor 42.Refractive light paths changes unit and will be described later.

Check the travel path of incident light 40L with reference to Fig. 2, then incident light 40L is incident on inclined surface 40S2 through the light incident surface 40S1 of total internal reflection prism 40, has given angle (givenangle) 40A thus.Here, if angle (fixedangle) is determined in the total internal reflection that given angle 40A is equal to or greater than total internal reflection prism 40, then incident light 40L is totally reflected to total internal reflection prism 40 inside at inclined surface 40S2 place, so incident light 40L does not arrive imageing sensor 42.In fig. 2,40R represents the light be totally reflected at inclined surface 40S2 place.Light absorption units 44 can be arranged in one of total internal reflection prism 40 on the surface, and wherein total reflection light 40R sends via this surface of total internal reflection prism 40.Light absorption units 44 can be light absorping film.

If angle is determined in the total internal reflection that given angle 40A is less than total internal reflection prism 40, then incident light 40L does not meet total internal reflection condition, so be refracted at inclined surface 40S2 place.Refract light 40T arrives imageing sensor 42.

Meanwhile, as external action, the electric field 40E caused by applying voltage is applied to total internal reflection prism 40, and the alinternal reflection angle of total internal reflection prism 40 can change in two ways.The first situation is that the alinternal reflection angle of total internal reflection prism 40 increases along with the intensity of electric field 40E and becomes the total internal reflection being less than total internal reflection prism 40 and determine angle, and the second situation is that the alinternal reflection angle of total internal reflection prism 40 becomes along with the intensity increase of electric field 40E the total internal reflection being greater than total internal reflection prism 40 and determines angle.

In the first case, but the total internal reflection that given angle 40A (i.e. the incident angle of incident light 40L) is less than total internal reflection prism 40 determines angle the minimum alinternal reflection angle being greater than the applying corresponding to electric field 40E and can being formed in total internal reflection prism 40.

In the second situation, but the total internal reflection that the incident angle 40A of incident light 40L is greater than total internal reflection prism 40 determines angle the maximum alinternal reflection angle being less than the applying corresponding to electric field 40E and can being formed in total internal reflection prism 40.Imageing sensor 42 comprises multiple pixel 42P, but only can comprise a pixel.Imageing sensor 42 can be the whole imageing sensor of optical shutter, or can be a part for the whole imageing sensor comprising at least one pixel.In other words, the total internal reflection prism 40 of Fig. 2 can be the alinternal reflection angle control medium corresponding with the whole imageing sensor of optical shutter.In addition, total internal reflection prism 40 can be the alinternal reflection angle control medium corresponding with a part for the whole imageing sensor comprising at least one pixel.That is, as alinternal reflection angle control medium, optical shutter only can comprise a total internal reflection prism 40, or can comprise the prism array formed by multiple total internal reflection prism 40.When prism array, the total internal reflection prism 40 of Fig. 2 can correspond to the prism unit forming prism array.

Fig. 3 be illustrate alternate figures 2 total internal reflection prism 40 and adopt the figure of the structure of the optical shutter of dissimilar prism (at hereinafter referred to as the second prism 46).

With reference to Fig. 3, the second prism 46 has the light incident surface 46S1 tilted relative to incident light 46L.In addition, the second prism 46 has the total internal reflection surface 46S2 parallel with imageing sensor 42.Light incident surface 46S1 and total internal reflection surface 46S2 forms the given angle being less than about 90 degree.Light absorption units 44 is arranged in a surface of the second prism 46, and the light 46R be totally reflected at total internal reflection surface 46S2 place sends via this surface of the second prism 46.Light absorption units 44 can be coated in the light absorping film on the surface sending total reflection light 46R.Imageing sensor 42 can be formed at or oblique incidence vertical at the light 46T of the total internal reflection surface 46S2 place of the second prism 46 refraction to the position on it.When imageing sensor 42 is arranged in the mode of refract light 46T oblique incidence on imageing sensor 42, the unit (not shown) for changing the optical path of refract light 46T can be arranged between imageing sensor 42 and the total internal reflection surface 46S2 of the second prism 46.Impinged perpendicularly on imageing sensor 42 by the light 46T that this unit reflects.This unit will be described later.The material of the second prism 46 can be identical or different with the material of the total internal reflection prism 40 of Fig. 2.

The path of incident light 46L is checked with reference to Fig. 3.First, the path of incident light 46L is checked when not applying external action.Incident light 46L enters light incident surface 46S1 with incident angle 46A.Incident angle 46A is less than about 90 degree.First incident light 46L is refracted given angle at light incident surface 46S1 place.Now, according to the first refractive angle of Si Nieer (Snell) law determination incident light 46L.Reflected for the second time at total internal reflection surface 46S2 place by the incident light 46L reflected for the first time at light incident surface 46S1 place, thus be incident on imageing sensor 42 or be totally reflected and absorbed by light absorption units 44.According to the incident angle 46A of incident light 46L, incident light 46L is reflected for the second time at total internal reflection surface 46S2 place or is totally reflected.

Below, when there is external action, such as, when electric field 46E is applied to the second prism 46, the path of incident light 46L is checked.According to the intensity of external action, the refraction rate of change of the second prism 46.Such as, are KTN (KTaLnO at the second prism 46 ₃) prism when, the refractive index of the second prism 46 can regulate in the scope of about 2.3 to about 2.4 by regulating the intensity of external action.

Now the intensity of the alinternal reflection angle at the total internal reflection surface 46S2 place of description second prism 46 along with electric field 46E is increased and the situation of reduction.The incident angle 46A of incident light 46 can be fixed on a given angle.When angle is determined in the total internal reflection being incident on the incident angle 46B formed when the light on total internal reflection surface 46S2 (namely, on light incident surface 46S1 by the light 46LR reflected for the first time) is incident on total internal reflection surface 46S2 and being less than total internal reflection surface 46S2 place.Thus incident light 46L is incident on light incident surface 46S1 with incident angle 46A, first refractive light 46LR can be incident on total internal reflection surface 46S2 with incident angle 46B, and angle is determined in the total internal reflection that incident angle 46B is less than the second prism 46.Now, when electric field 46E is applied to the second prism 46, angle is determined in the total internal reflection that the alinternal reflection angle at the total internal reflection surface 46S2 place of the second prism 46 is less than total internal reflection surface 46S2 place.Apply the voltage strength of electric field 46E can in the scope of about 0V to about 150V.

If the alinternal reflection angle of the second prism 46 is minimum alinternal reflection angles when the intensity of electric field 46E is maximum, then first refractive light 46LR can be greater than this minimum alinternal reflection angle relative to the incident angle 46B of total internal reflection surface 46S2.That is, the incident angle 46B of first refractive light 46LR can have the value of determining between angle and this minimum alinternal reflection angle in the total internal reflection of the second prism 46.Like this, when the alinternal reflection angle at total internal reflection surface 46S2 place becomes according to the intensity of applied electric field 46E the incident angle 46B being less than first refractive light 46LR, first refractive light 46LR is totally reflected at total internal reflection surface 46S2 place and is then absorbed by light absorption units 44.

If the alinternal reflection angle of the second prism 46 becomes along with the reduction of electric field 46E the incident angle 46B being greater than first refractive light 46LR, then first refractive light 46LR no longer meet total internal reflection condition and therefore first refractive light 46LR through total internal reflection surface 46S2 and reflecting towards imageing sensor 42.In this way, by regulating the intensity being applied to the electric field 46E of the second prism 46, the total internal reflection of the second prism 46 is determined angle and can be conditioned thus total internal reflection and the refraction that can regulate the first refractive light 46LR be incident on total internal reflection surface 46S2.

Meanwhile, when the alinternal reflection angle at the total internal reflection surface 46S2 place of the second prism 46 increases along with the intensity of electric field 46E, angle is determined in the total internal reflection that first refractive light 46LR is greater than the second prism 46 relative to the incident angle 46B of total internal reflection surface 46S2.

If the alinternal reflection angle being in the second prism 46 during the maximal value in above-mentioned voltage range when the intensity of electric field 46E is maximum alinternal reflection angle, then the incident angle 46B of first refractive light 46LR is less than maximum alinternal reflection angle.That is, the incident angle 46B of first refractive light 46LR can have the total internal reflection being greater than the second prism 46 and determines angle and be less than the value of maximum alinternal reflection angle.Therefore, when the alinternal reflection angle of the second prism 46 increases along with the intensity of electric field 46E, first refractive light 46LR meets initial total internal reflection condition, but no longer meet total internal reflection condition along with the applying of electric field 46E, in being through total internal reflection surface 46S2, thus optical shutter starts with shutter close state at first, then change into shutter opening state along with the increase of the intensity of electric field 46E.

When the alinternal reflection angle of the second prism 46 reduces along with the intensity of electric field 46E, situation is contrary.That is, optical shutter starts with shutter opening state at first, then changes into shutter close state along with the increase of the intensity of electric field 46E.

Then, will the optical shutter comprising alinternal reflection angle control medium 30 and light path altering unit be described.About above-described unit, use identical Reference numeral.

Fig. 4 is the figure of the optical shutter of Fig. 2 according to another one exemplary embodiment, and it comprises light path altering unit.

With reference to Fig. 4, light path altering unit i.e. prism 48 is arranged between total internal reflection prism 40 and imageing sensor 42.Total internal reflection prism 40 and prism 48 can be collectively referred to as reactive solid electro-optical medium, i.e. optical shutter, and it has total internal reflection surface, are changed by external action at this surface alinternal reflection angle.Here, total internal reflection prism 40 can be called as first medium, changed by external action at this first medium place alinternal reflection angle, prism 48 can be called second medium, this second medium is used for making light always perpendicular to imageing sensor 42, and wherein light enters imageing sensor 42 from first medium.These terms can be applied to the optical shutter of all types comprising two prisms or two prism arrays, described two prisms or two prism arrays comprise prism for making light vertical incidence on imageing sensor 44 or prism array, and this will be described later.

Prism 48 can be the prism at band right angle.Prism 48 can be substantially identical with total internal reflection prism 40.Although total internal reflection prism 40 is different with the material of prism 48, the refractive index of total internal reflection prism 40 and prism 48 is greater than the refractive index of air.The inclined surface of total internal reflection prism 40 and prism 48 is facing with each other.But the inclined surface of total internal reflection prism 40 and prism 48 is located adjacent one another not to contact with each other.So gap 50 is formed uniformly between total internal reflection prism 40 and the inclined surface of prism 48.

The thickness in gap 50 from about 1 μm to about 2 μm, but can be less than this.Although have air in gap 50, other material may reside in gap 50.Here, the material be present in gap 50 is transparent and has the refractive index less than the refractive index of total internal reflection prism 40 and prism 48.As long as material meets these conditions, then the type being present in the material in gap 50 can be unrestricted.Because the thickness in gap 50 is even, so gap 50 is used as optical medium, the travel path for the light by the total internal reflection surface 40S2 through total internal reflection prism 40 is mobile to set a distance abreast along the direction vertical with the travel path of light.Here, the thickness in the distance moved in parallel and gap 50 is proportional.The inclined surface of prism 48 is through the incident light incident surface thereon of light in gap 50, and in the face of the inclined surface of total internal reflection prism 40, i.e. total internal reflection surface 40S2.

The light exit surface 48T of prism 48 is parallel to light incident surface 40S1 and the imageing sensor 42 of total internal reflection prism 40.Therefore, be incident on light on prism 48 entering total internal reflection prism 40 in reverse direction with from total internal reflection surface 40S2 and through identical path, the path of the light of total internal reflection prism 40 through prism 48 through gap 50.Therefore, when the light of vertical incidence on the light incident surface 40S1 of total internal reflection prism 40 passes the light exit surface 48T of prism 48, light is launched perpendicular to light exit surface 48T.That is, it is 0 degree at the refraction angle of the emergent light at light exit surface 48T place.Because imageing sensor 42 is parallel to the light exit surface 48T of prism 48, so through the light vertical incidence of light exit surface 48T of prism 48 on imageing sensor 42.

In this way, by arranging prism 48, the path of the light that the total internal reflection surface 40S2 of total internal reflection prism 40 reflects can be changed, make light can vertical incidence on imageing sensor 42.By arranging prism 48, imageing sensor 42 can be arranged on immediately below total internal reflection prism 40, thus can reduce the lateral dimension of optical shutter.When Fig. 2 and Fig. 3, imageing sensor 42 can be arranged so that refract light 40T and 46T can perpendicular to imageing sensor 42.The optical medium be present between prism 48 with imageing sensor 42 can be substantially identical with the optical medium be present in gap 50.

Fig. 5 is the figure of the optical shutter of Fig. 3 according to another one exemplary embodiment, and it comprises light path altering unit.

With reference to Fig. 5, light path altering unit i.e. the 4th prism 52 is arranged between the second prism 46 and imageing sensor 42.4th prism 52, for changing the path of the light launched from the total internal reflection surface 46S2 of the second prism 46, makes light vertical incidence on imageing sensor 42 thus.Incident light 46L on the light incident surface 46S1 of the second prism 46 will be incident on the direction perpendicular to imageing sensor 42.

4th prism 52 can be equal to the second prism 46 about shape and function.The material of the 4th prism 52 can be identical or different with the material of the second prism 46.Although material is different, the refractive index of the second prism 46 and the 4th prism 52 higher than air, and can be greater than the refractive index of the optical medium in the gap 54 be filled between the second prism 46 and the 4th prism 52.

About the setting of the 4th prism 52, the light incident surface 52S1 of the 4th prism 52 corresponds to the total internal reflection surface 46S2 of the second prism 46, light incident surface 52S1 and total internal reflection surface 46S2 each other very near but do not contact with each other.Like this, gap 54 is formed between the light incident surface 52S1 of the 4th the prism 52 and total internal reflection surface 46S2 of the second prism 46.Light incident surface 52S1 and total internal reflection surface 46S2 is facing with each other, because this gap 54 has uniform thickness.Like this, gap 54 can perform the function substantially identical with the function performed by the gap 50 of Fig. 4.

The light exit surface 52S2 of the 4th prism 52 corresponds to the light incident surface 46S1 of the second prism 46.According to this set of the 4th prism 52, be incident on light on the 4th prism 52 along the path identical with the path being incident on the light that then the total internal reflection surface 46S2 of the second prism 46 advances in reverse direction through gap 54.Therefore, the light light exit surface 52S2 of the 4th prism 52 reflected and the incident light 46L be incident on the light incident surface 46S1 of the second prism 46 advance abreast.Be incident on incident light 46L on the light incident surface 46S1 of the second prism 46 perpendicular to imageing sensor 42.Therefore, the light 52T vertical incidence of launching from the light exit surface 52S2 of the 4th prism 52 is on imageing sensor 42.

In Figure 5, the second prism 46 and the 4th prism 52 can correspond to whole imageing sensor 42, but can also correspond to some pixels of imageing sensor 42.Such as, the second prism 46 and the 4th prism 52 can corresponding at least one pixel be included in imageing sensor 42 or two or more pixels.Optical shutter can comprise the prism array with the second prism 46 shown in multiple Fig. 3, or can comprise the prism array with multiple structure, its each comprise the second prism 46 shown in Fig. 5 and the 4th prism 52.

Fig. 6 is the figure of the optical shutter according to another one exemplary embodiment, and this optical shutter comprises for changing travel path of incident light thus making incident light become the unit of directional light, and wherein incident light beam strikes is on the light incident surface of alinternal reflection angle control medium.Can be lens unit for changing the unit (changing unit in hereinafter referred to as travel path of incident light) in the path of incident light.In other one exemplary embodiment, the unit for changing travel path of incident light cited above and below can change the shape of incident light.In other one exemplary embodiment, the unit (such as travel path of incident light change unit) for changing travel path of incident light cited above and below can be unit or the incident light alteration of form unit of shape for changing incident light.

With reference to Fig. 6, collimating apparatus (collimatingmeans) 58 is arranged on the light incident surface 40S1 of total internal reflection prism 40.The sphere glistening light of waves 40DL be incident on total internal reflection prism 40 is changed into plane glistening light of waves 40L by collimating apparatus 58, and plane glistening light of waves 40L vertical incidence is on the light incident surface 40S1 of total internal reflection prism 40.Collimating apparatus 58 can be lens.The light exit surface 58S2 of collimating apparatus 58 can be parallel to the light incident surface 40S1 of total internal reflection prism 40, and contacts the light incident surface 40S1 of total internal reflection prism 40.The light incident surface 58S1 of collimating apparatus 58 is convex surfaces.

Fig. 7 is the figure of the optical shutter of Fig. 4, and it comprises travel path of incident light and changes unit.

With reference to Fig. 7, collimating apparatus 58 is arranged on the light incident surface 40S1 of total internal reflection prism 40.Collimating apparatus 58 can be substantially identical with the collimating apparatus described with reference to Fig. 6.

Fig. 8 is the figure of the optical shutter of Fig. 3, and it also comprises the collimating apparatus 58 changing unit as travel path of incident light.Due to the arrangement of collimating apparatus 58, although sphere glistening light of waves 40DL is incident on optical shutter, the light 46L that will be incident on the second prism 46 is directional light.

Fig. 9 is the figure of the optical shutter of Fig. 5, and it also comprises the collimating apparatus 58 changing unit as travel path of incident light.The collimating apparatus 58 of Fig. 9 can perform the substantially identical function of the function that performs with the collimating apparatus 58 of Fig. 8.

To the optical shutter comprising the array formed by multiple alinternal reflection angle control medium 30 be described below.Form the multiple alinternal reflection angle control mediums 30 being included in array in optical shutter to be equal to those shown in Fig. 1 to Fig. 5 or similar.

Figure 10 A and Figure 10 B is the figure of the optical shutter of the array comprising alinternal reflection angle control medium, and the total internal reflection prism 40 of Fig. 2 is used as unit in the array.About previously described unit, use similar Reference numeral.

With reference to Figure 10 A, optical shutter comprises the first substrate 62 and the first prism array 60.First prism array 60 is attached on the light exit surface of the first substrate 62.First substrate 62 can be electro-optic substrate, and its refractive index changes according to external action, and it is transparent to incident light.First substrate 62 can be formed by the material substantially identical with the microprism 60A forming the first prism array 60.In addition, the first substrate 62 can be formed by the material of refractive index close to the refractive index of microprism 60A.First substrate 62 can be formed by glass or sapphire.The incident light entering the first substrate 62 can be directional light.Microprism 60A can be equal to the total internal reflection prism 40 of Fig. 2 about shape, material and function.Light absorption units 44 is attached on the surface sending total internal reflection light of microprism 60A.First prism array 60 is formed by multiple microprism 60A.

First prism array 60 can be formed by this way, be about to be used as the electro-optic substrate of microprism 60A on another surface of the first substrate 62 (namely, light exit surface) above deposition or growth are with the thickness with the thickness t1 being equal to or greater than the first prism array 60, and then electro-optic substrate is cut or etching.Here, the thickness of the electro-optic substrate of deposition or growth can be regulated by cutting operation, and then cut electro-optic substrate can have the shape substantially identical with the first prism array 60 by etching operation.For the election, the first prism array 60 can be formed by this way, and namely the first substrate 62 and electro-optic substrate are formed separately, and then electro-optic substrate joins the first substrate 62 to, and the electro-optic substrate of joint is cut as described above and etches.Simultaneously, electro-optic substrate can carry out composition by cutting and etching operation, thus there is the shape substantially identical with the first prism array 60, then by using orientated deposition, light absorption units 44 can be formed in the light from total internal reflection surface 60S2 total reflection of each microprism 60A by its surface sent.

Figure 10 B is the planimetric map of the first prism array 60.

With reference to Figure 10 B, multiple microprism 60a is arranged to bar shaped.

In Figure 10 A, the light 40T that the total internal reflection surface 60S2 of the first prism array 60 reflects is incident on imageing sensor 42 obliquely, and namely refract light 40T is to be greater than the incident angles of about 0 degree on imageing sensor 42.But, refract light 40T can vertical incidence on imageing sensor 42.In order to make refract light 40T vertical incidence on imageing sensor 42, imageing sensor 42 can be set to tilt relative to the first substrate 62, shown in dotted line.

For the election, as shown in figure 11, the second prism array 64 can be arranged between imageing sensor 42 and the first prism array 60.Second prism array 64 is paths for changing the light 40T reflected on the total internal reflection surface 60S2 of the first prism array 60 thus makes the unit of light 40T vertical incidence on imageing sensor 42.In other words, the second prism array 64 is travel paths for changing refract light 40T thus makes the unit that this travel path is identical with the travel path of the light be incident on the first substrate 62.First prism array 60 and the second prism array 64 can arrange adjacent one another are, thus by arrange microprism 60A and 64A with the total internal reflection prism 40 of Fig. 4 and the similar layout of the layout of prism 48, microprism 60A and 64A forms the gap (Reference numeral 72 of reference Figure 13) corresponding with gap 50.But in fig. 11, in order to be clearly shown that the first prism array 60 and the second prism array 64, for convenience's sake, the vertical range between the first prism array 60 and the second prism array 64 is exaggerated.Second substrate 66 is arranged between the second prism array 64 and imageing sensor 42.Second prism array 64 is arranged on the light incident surface of the second substrate 66.Second prism array 64 comprises multiple microprism 64A.Microprism 64A can be equal to the prism 48 of Fig. 4 about shape, material and function aspects.The material of the second substrate 66 can be identical with the material of the microprism 64A of the second prism array 64.In addition, the material of the second substrate 66 can have the refractive index close with the refractive index of microprism 64A.In addition, the material of the second substrate 66 can be substantially identical with the material of the first substrate 62.Between the microprism 64A of the second prism array 64 and microprism 60A of the first prism array 60 arrange can and Fig. 4 between total internal reflection prism 40 and prism 48 arrange substantially identical.

Meanwhile, in the optical shutter of Figure 10 A, when the incident light entering the first substrate 62 is spherical wave, namely when incident light is not directional light, as shown in figure 12, travel path of incident light change unit 68 can be arranged on the light incident surface of the first substrate 62 further.Travel path of incident light changes the path that unit 68 can change the light 68L that will incide on travel path of incident light change unit 68, thus directional light is incident on the light incident surface of the first substrate 62.In other words, travel path of incident light change unit 68 change will incide travel path of incident light change the path of the light 68L on unit 68 thus the travel path making light 68L in a same direction.Correspondingly, the light be incident on the first prism array 60 becomes directional light, thus light vertical incidence is on the light incident surface of each microprism 60a.It can be Fresnel (Fresnel) lens that travel path of incident light changes unit 68.

Next, in the optical shutter of Figure 11, when the incident light entering the first substrate 62 is spherical wave, as shown in figure 13, travel path of incident light change unit 70 can be arranged on the light incident surface of the first substrate 62 further.Travel path of incident light changes that unit 70 can to change unit 68 substantially identical with the travel path of incident light of Figure 12.

Figure 14 A, 14B and 14C are the figure of the optical shutter comprising the prism array formed by multiple microprism according to another one exemplary embodiment.

With reference to Figure 14 A, optical shutter comprises prism array 74 and imageing sensor 42.Prism array 74 can comprise the 3rd substrate 74A and multiple microprism 74B.Each microprism 74B can correspond to the example of alinternal reflection angle control medium, therefore, each microprism 74B can be replaced to arrange the alinternal reflection angle control medium of another type.3rd substrate 74A can relative to imageing sensor 42 with given overturning angle.Therefore, the light incident surface 74AS of the 3rd substrate 74A tilts with same angular relative to imageing sensor 42.Multiple microprism is arranged on the light incident surface 74AS of the 3rd substrate 74A.Multiple microprism 74B arranges in a step-wise manner, and is attached on the light incident surface 74AS of the 3rd substrate 74A.

For convenience, in Figure 14 B, the 3rd substrate 74A and multiple microprism 74B separately.Each microprism 74B is the prism at band right angle, can be substantially identical with the microprism 60A of Figure 10 A.The inclined surface of multiple microprism 74B, i.e. the total internal reflection surface 74S2 of multiple microprism 74B, the light incident surface 74AS of contact the 3rd substrate 74A.Here, multiple microprism 74B can be parallel to imageing sensor 42 for the light incident surface 74S1 receiving incident light 40L.Like this, the interior angle 76 between imageing sensor 42 and the 3rd substrate 74A equals the interior angle in each microprism 74B between light incident surface 74S1 and total internal reflection surface 74S2.

But, when imageing sensor 42 be arranged so that from prism array 74 light 74T can vertical incidence on imageing sensor 42, the interior angle 76 between imageing sensor 42 and the 3rd substrate 74A can be different from the interior angle in each microprism 74B between light incident surface 74S1 and total internal reflection surface 74S2.3rd substrate 74A can be the substrate to the optical transparency through microprism 74B.The refractive index of the 3rd substrate 74A can be greater than the refractive index of air, and can be less than the minimum refractive index of the microprism 74B caused by external action.

The incident light 40L entering optical shutter can be totally reflected or reflect according to the condition of external action on the total internal reflection surface 74S2 of multiple microprism 74B.So the light incident surface 74AS of the 3rd substrate 74A is received in the light that the total internal reflection surface 74S2 of multiple microprism 74B reflects.The light 74R be totally reflected from the total internal reflection surface 74S2 of multiple microprism 74B by external action such as electric field 40E is sent through the surface vertical with each light incident surface 74S1 of each microprism 74B (in hereinafter referred to as right-angled surface).But right-angled surface is coated with light absorption units 44.Like this, total reflection light 74R is absorbed by light absorption units 44, thus total reflection light 74R is not incident on adjacent microprisms 74B.

As shown in figs. 14 a and 14b, assign to the lowermost portion of the light incident surface 74AS of the 3rd substrate 74A from the highest portion of the light incident surface 74AS of the 3rd substrate 74A, microprism 74B arranges in successive steps mode.Therefore, advance assuming that be parallel to light incident surface 74AS by external action from the light 74R that total internal reflection surface 74S2 is totally reflected, then total reflection light 74R can not affect adjacent microprisms 74B, thus light absorption units 44 can not included in the optical shutter of Figure 14 A, 14B and 14C.

Figure 14 C is the planimetric map of prism array 74.In Figure 14 A, between the pixel of microprism 74B and imageing sensor 42, there is one-to-one relationship.But each microprism 74B can correspond to two or more pixels of imageing sensor 42.This corresponding relation can be applied to the optical shutter described with reference to Figure 10 to Figure 13, can also be applied to the optical shutter described below.In this way, when a prism array corresponds to multiple pixel, the process margin forming prism array can increase, thus the formation of prism array can more easily realize.

Simultaneously, when incident light 40L in the optical shutter of Figure 14 A is non-directional light, namely the wave surface of incident light 40L is not plane, such as, when being spherical wave, as shown in figure 15, before the unit 80 for changing the path of incident light 40L can be arranged in prism array 74 further.Unit 80 (changing unit 80 in hereinafter referred to as travel path of incident light) can to change unit substantially identical with above-described travel path of incident light before.

For the election, as shown in figure 16, the 4th prism array 84 can be arranged between prism array 74 and imageing sensor 42 further.4th prism array 84 can be light path altering unit.4th prism array 84 makes light (the light 74T with reference to Figure 14 A) vertical incidence reflected from prism array 74 to imageing sensor 42 on imageing sensor 42.4th prism array 84 comprises the 3rd substrate 74A and multiple microprism 84B.Prism array 74 and the 4th prism array 84 can share the 3rd substrate 74A.3rd substrate 74A can be formed by making two substrates engage.Here, one of described two substrates can be included in prism array 74, and another in described two substrates can be included in the 4th prism array 84.Multiple microprism 84B of the 4th prism array 84 can be substantially identical with multiple microprism 74B of prism array 74.

Multiple microprism 84B of the 4th prism array 84 are attached on the light exit surface 74AT of the 3rd substrate 74A.The light exit surface 74AT of inclined surface contact the 3rd substrate 74A of multiple microprism 84B.The light exit surface 84S1 of multiple microprism 84B corresponds to the light incident surface 74S1 of multiple microprism 74B, and multiple microprism 84B is attached and makes light incident surface 74S1 and light exit surface 84S1 parallel to each other.

Multiple microprism 84B of the 4th prism array 84 vertically correspond to multiple microprism 74B of prism array 74 respectively.That is, there is one-to-one relationship between microprism 84B and microprism 74B.In figure 16, through multiple microprism 74B, the 3rd substrate 74A of prism array 74 and the 4th prism array 84 multiple microprism 84B and thus the path of the incident light 40L of vertical incidence on imageing sensor 42 be not different from through total internal reflection prism 40, gap 50 and prism 48 and the path (with reference to Fig. 4) of the incident light 40L of vertical incidence on imageing sensor 42 thus.

When non-parallel light is used as the incident light in the optical shutter of Figure 16, as shown in figure 17, before travel path of incident light change unit 90 can be arranged in prism array 74, thus non-parallel incident light 68L can become parallel input light 40L.It is substantially identical that travel path of incident light change unit 90 can change unit 80 with the travel path of incident light described with reference to Figure 15.

Figure 18 A and Figure 18 B is the figure of the optical shutter comprising the prism array formed by multiple microprism according to another one exemplary embodiment.About above-described unit, use identical Reference numeral.

With reference to Figure 18 A, optical shutter comprises the 4th prism array 94.4th prism array 94 can be another example of the alinternal reflection angle control medium 30 of Fig. 1.4th prism array 94 comprises the 4th substrate 94A and multiple microprism 94B.4th substrate 94A can be parallel to imageing sensor 42.But imageing sensor 42 can be arranged in such a way, make from the 4th prism array 94 incident light 46T can vertical incidence on imageing sensor 42, in this case, imageing sensor 42 can be not parallel to the 4th substrate 94A.Multiple microprism 94B is arranged on the light incident surface of the 4th substrate 94A.The technique forming multiple microprism 94B on the light incident surface at the 4th substrate 94A can be substantially identical with the technique of the first prism array 60 for the formation of Figure 10 A.Each microprism 94B can be substantially identical with second prism 46 of Fig. 3, except size aspect.Therefore, incident light 46L is through multiple microprism 94B and to become the process that refract light 46T or the process that is totally reflected can describe with the second prism 46 with reference to Fig. 3 thus substantially identical.

4th substrate 94A is for the transparent substrate of incident light 46L.4th substrate 94A is formed by the material with the electro-optical characteristic substantially identical with multiple microprism 94B, and the refractive index of material can be changed with multiple microprism 94B similarly by external action (such as when electric field 46E is applied to the optical shutter shown in Figure 18 A by the intensity of electric field 46E).Figure 18 B is the planimetric map of the 4th prism array 94.

Figure 19 is the figure of the optical shutter comprising the prism array formed by multiple microprism according to another one exemplary embodiment.

Optical shutter with reference to Figure 19, Figure 19 corresponds to pentaprism array 98 and is arranged in situation between the 4th prism array 94 of the optical shutter of Figure 18 A and imageing sensor 42 further.Pentaprism array 98 can be another example of light path altering unit.Therefore, substitute pentaprism array 98, other light path altering unit performing basic identical function can be arranged.Pentaprism array 98 is used for changing the path of the light 46T shown in Figure 18 thus makes the light 46T shown in Figure 18 become light 98T perpendicular to imageing sensor 42, and wherein in shutter opening state, light 46T advances from the 4th prism array 94 to imageing sensor 42.By arranging pentaprism array 98, imageing sensor 42 and the 4th prism array 94 can be arranged on the same vertical optical axis of the optical shutter of Figure 19.Therefore, the lateral dimension of optical shutter can be reduced, and because light vertical incidence is on imageing sensor 42, so the light detection efficiency of imageing sensor 42 can be increased.

Gap 100 is present between the 4th prism array 94 and pentaprism array 98.Gap 100 can be equal to or less than about 10 μm.The thickness in gap 100 is uniform.Gap 100 can be filled with the optical medium with given refractive index.The refractive index of filling the optical medium in gap 100 can be less than the refractive index of the 4th prism array 94 and pentaprism array 98.The optical medium of filling gap 100 can be the another kind of material that refractive index is less than air or the 4th substrate 94A and the 5th substrate 98A.Therefore, the light through gap 100 moves horizontally pro rata with the thickness in gap 100 on the direction of the travel path of light.Therefore, the thickness in gap 100 can be considered the position of imageing sensor 42 and suitably determine.

Pentaprism array 98 comprises the 5th substrate 98A and multiple microprism 98B.5th substrate 98A can be the electrooptical material substantially identical with the 4th substrate 94A.In addition, the 5th substrate 98A can have the thickness substantially identical with the 4th substrate 94A.5th substrate 98A is parallel to the 4th substrate 94A, and the 5th substrate 98A and the 4th substrate 94A is facing with each other.Gap 100 is present between the 5th substrate 98A and the 4th substrate 94A.The electro-optical characteristic of each microprism 98B can be substantially identical with each microprism 94B of the 4th prism array 94, except their arranged direction.Multiple microprism 98B in pentaprism array 98 are attached on the light exit surface 98AS2 of the 5th substrate 98A.

Each microprism 98B corresponds to each microprism 94B of the 4th prism array 94.Each microprism 94B that each microprism 98B corresponds in the 4th prism array 94 rotates around Y-axis then about 180 degree rotate about 180 degree situation around X-axis.Light absorption units 44 is arranged on the light exit surface of the transmitting total reflection light of each microprism 94B of the 4th prism array 94, and in this respect, light absorption units 98C is arranged on the surface of each microprism 98B of the 5th substrate 98A, and wherein this surface corresponds to the light exit surface of each microprism 94B.Here, light absorption units 98C is optional, therefore can not be included.In fact the travel path of incident light 46L is changed by microprism 94B and 98B, and the shape of microprism 94B with 98B is substantially identical with electro-optical characteristic with the shape of the 4th prism 52 with second prism 46 of Fig. 5 with electro-optical characteristic.Therefore, be incident on the optical shutter being in shutter opening state of Figure 19, being then incident on the travel path of the incident light 46L on imageing sensor 42 through the 4th prism array 94 and pentaprism array 98 can be substantially identical with the travel path (with reference to Figure 15) being then incident on the light on imageing sensor 42 through the second prism 46 and the 4th prism 52.

The incident light 46L entering the optical shutter of Figure 18 is directional light.But the non-parallel light such as sphere glistening light of waves can be incident on optical shutter.In this case, as shown in the optical shutter of Figure 20, before travel path of incident light change unit 110 can be arranged in prism array 94.It can be Fresnel lens that travel path of incident light changes unit 110.Travel path of incident light changes unit 110 and spherical wave incident light 68L is changed into directional light 46L.

Meanwhile, the light be incident on the optical shutter of Figure 19 can be non-directional light.In this case, as shown in the optical shutter of Figure 21, before travel path of incident light change unit 120 can be arranged in prism array 94.The travel path of incident light of Figure 21 changes that unit 120 can to change unit 110 substantially identical with the travel path of incident light of Figure 20.

Travel path of incident light change unit 110 in the optical shutter of Figure 20 with Figure 21 and travel path of incident light change unit 120 can be arranged as and directly contact prism array 94.But the transparent plate with uniform thickness can be arranged in prism array 94 further and travel path of incident light changes between unit 110 and 120.

Figure 22 A is the figure of the optical shutter according to another one exemplary embodiment.

With reference to Figure 22 A, optical shutter comprises the 6th prism array 130 and the 7th prism array 140.7th prism array 140 and the 6th prism array 130 are arranged sequentially in above imageing sensor 42.6th prism array 130 and the 7th prism array 140 and imageing sensor 42 are arranged on same optic axis.Clearance G 2 is present between the 6th prism array 130 and the 7th prism array 140.In Figure 22 A, in order to illustrate and describe conveniently, clearance G 2 is exaggerated.As shown in figure 23, in fact clearance G 2 is present between the inclined surface of the first annular microprism 130B and the inclined surface of the second annular microprism 140B.The spacing of clearance G 2 can be equal to or less than about 10 μm.

According to external action, such as according to the intensity of applied electric field E1 or the voltage levvl that applies, the 6th prism array 130 makes incident light L1 propagate (shutter opening state) towards the 7th prism array 140 or stop the propagation (shutter close state) of light L1.When optical shutter is in shutter opening state, the 7th prism array 140 is used for changing the path from the light of the 6th prism array 130, thus makes light vertical incidence on imageing sensor 42.6th prism array 130 comprises the 6th substrate 130A and multiple first annular microprism 130B.6th substrate 130A can be formed by the material that electro-optical characteristic is substantially identical with multiple first annular microprism 130B, the transparent material that such as refractive index is changed by electric field E1.6th substrate 130A can be substantially identical with first substrate 62 of Figure 10 A.Multiple first annular microprism 130B is different from each other in size.

Figure 22 B is the backplan of the 6th prism array 130.

With reference to Figure 22 B, the array of multiple first annular microprism 130B constructs by this way, the first annular microprism 130B namely with minimum diameter is present in the center of array, according to the order according to diameter dimension, the first annular microprism 130B is around the first with minimum diameter annular microprism 130B.As shown in fig. 22, the cut-open view of each first annular microprism 130B is the prism at the band right angle substantially identical with the microprism 60A of first prism array 60 of Figure 10 A.Therefore, the path (for the total internal reflection in total internal reflection surface or refraction) through the incident light L1 of multiple first annular microprism 130B of the 6th prism array 130 can be substantially identical with the path described with reference to Fig. 2 or 10A.Light absorption units 135 is attached to one of each first annular microprism 130B on the surface, and incident on a surface have the light RL1 be totally reflected from the total internal reflection surface 130S1 of each first annular microprism 130B of the 6th prism array 130.Light absorption units 135 can be substantially identical with the light absorption units 44 described with reference to Fig. 2.7th prism array 140 comprises the 7th substrate 140A and multiple second annular microprism 140B.

7th substrate 140A can be the substrate with the electro-optical characteristic substantially identical with the 6th substrate 130A.6th substrate 130A and the 7th substrate 140A can be parallel to each other and can have uniform thickness.Second annular microprism 140B is used as the counter pair (counterpart) of multiple first annular microprism 130B.Each xsect of the second annular microprism 140B is substantially identical with the microprism 64A of second prism array 64 of Figure 11.Therefore, the arrangement relation between multiple first annular microprism 130B and multiple second annular microprism 140B can be substantially identical with the arrangement relation between the first prism array 60 in Figure 11 and the second prism array 64.Therefore, the path then becoming the incident light L1 of the light TL1 of vertical incidence on imageing sensor 42 through multiple first annular microprism 130B and multiple second annular microprism 140B is substantially identical with the path of the incident light of the microprism 64A of the second prism array 64 with the microprism 60A through the first prism array 60 in Figure 11.

Meanwhile, when only non-parallel light on the optical shutter being incident in Figure 22 A, travel path of incident light changes before unit 150 can be arranged in the 6th prism array 130, as shown in figure 23.Travel path of incident light changes that unit 150 can to change unit 80,90,110 substantially identical with 120 with previously described travel path of incident light.Then non-parallel incident light NL1 is emitted as directional light by the path that travel path of incident light change unit 150 is used for changing non-parallel incident light NL1.

Figure 24 A is the figure of the optical shutter comprising the prism array formed by multiple microprism according to another one exemplary embodiment.

With reference to Figure 24 A, optical shutter comprises the 8th prism array 160 and the 9th prism array 170.Incident light L1 enters the 8th prism array 160.9th prism array 170 is arranged between the 8th prism array 160 and imageing sensor 42.8th prism array 160 and the 9th prism array 170 and imageing sensor 42 can be arranged on same optic axis.8th prism array 160 is used for stopping according to external action or allowing incident light L1.9th prism array 170 is examples of light path altering unit, then makes this light vertical incidence at imageing sensor 42 for the path changed from the light of the 8th prism array 160.8th prism array 160 and the 9th prism array 170 and imageing sensor 42 are arranged in parallel.

8th prism array 160 and the 9th prism array 170 separated from one another.Therefore, clearance G 3 is present between the 8th prism array 160 and the 9th prism array 170.Clearance G 3 is filled with optical material.Here, the refractive index of this optical material is less than the refractive index of the 8th prism array 160 and the 9th prism array 170.Optical material can be the material of air or other type.

8th prism array 160 comprises the 8th substrate 160A and multiple 3rd annular microprism 160B.8th substrate 160A can be formed by the material with the electro-optical characteristic substantially identical with the electro-optical characteristic of multiple 3rd annular microprism 160B.8th substrate 160A can be substantially identical with first substrate 62 of Figure 10 A.8th substrate 160A can be parallel with imageing sensor 42.Multiple 3rd annular microprism 160B is attached on the light incident surface of the 8th substrate 160A.Multiple 3rd annular microprism 160B can be formed by electrooptical material, and the refractive index of this electrooptical material is changed according to external action and therefore its alinternal reflection angle is changed.

About the layout of multiple 3rd annular microprism 160B, as shown in fig. 24b, the 3rd annular microprism 160B with minimum diameter is positioned at center, the 3rd annular microprism 160B according to according to the order of diameter dimension around the 3rd with minimum diameter annular microprism 160B.The surface of the light RL2 that the transmitting that light absorption units 180 is arranged in the 3rd annular microprism 160B is totally reflected from the 8th substrate 160A.Light absorption units 180 can be substantially identical with previously described light absorption units 44.

9th prism array 170 comprises the 9th substrate 170A and multiple 4th annular microprism 170B.9th substrate 170A is in the face of the 8th substrate 160A, and clearance G 3 is formed between which.9th substrate 170A can be parallel with imageing sensor 42 with the 8th substrate 160A.9th substrate 170A can have the electro-optical characteristic substantially identical with the 8th substrate 160A.9th substrate 170A can have the electro-optical characteristic substantially identical with multiple 4th annular microprism 170B.In addition, the 9th substrate 170A can be such substrate, and but this substrate does not have electro-optical characteristic is transparent, and has the refractive index close with the refractive index of multiple 4th annular microprism 170B.Multiple 4th annular microprism 170B can be arranged as corresponding to multiple 3rd annular microprism 160B, or can arrange similarly with multiple 3rd annular microprism 160B.Multiple 4th annular microprism 170B is attached on the light exit surface of the 9th substrate 170A.

With reference to Figure 24 A, the xsect of the 3rd annular microprism 160B and the 4th annular microprism 170B is equal to the microprism 94B of the prism array 94 of Figure 19 and the microprism 98B of the 4th prism array 98 respectively.In addition, in shutter opening state, can with substantially identical with the travel path of the incident light 46L of the microprism 98B of the 4th prism array 98 through the microprism 94B of prism array 94 in the optical shutter of Figure 19 with the travel path of the incident light L1 of multiple 4th annular microprism 170B through multiple 3rd annular microprism 160B.Therefore, in shutter opening state, the light TL2 vertical incidence of advancing through the 9th prism array 170 and towards imageing sensor 42 is on imageing sensor 42.The xsect of each 4th annular microprism 170B can correspond to each 3rd annular microprism 160B and rotate around Y-axis then about 180 degree rotate about 180 degree situation around X-axis.Light absorption units 190 can be attached on the surface of each 4th annular microprism 170B, and wherein this surface corresponds to the light exit surface of the transmitting total reflection light RL2 of each 3rd annular microprism 160B.

In shutter opening state, the light be incident on multiple 4th annular microprism 170B is refracted on refractive surface 170S2, is then incident on imageing sensor 42.In this process, reflected light (not shown) can produce on refractive surface 170S2.Reflected light can disturb the 4th adjacent annular microprism 170B.Light absorption units 190 absorbs the reflected light reflected from refractive surface 170S2.Therefore, by arranging light absorption units 190, can prevent the light between multiple 4th annular microprism 170B from disturbing.When the amount of reflected light is little, light absorption units 190 can not be used.

Meanwhile, when the incident light L1 of the optical shutter entering Figure 24 is non-directional light NL1, before travel path of incident light change unit 200 can be arranged in the 8th prism array 160, as shown in figure 25.It can be Fresnel lens that travel path of incident light changes unit 200.The travel path being incident on the non-parallel smooth NL1 on travel path of incident light change unit 200 is changed unit 200 by travel path of incident light and changes, and then non-parallel smooth NL1 is incident on the 8th prism array 160 as directional light L1.

Hereinafter, will the realistic model relevant to the optical shutter that above-mentioned one exemplary embodiment provides be described, and check the operating characteristic obtained from realistic model.

Figure 26 is the figure of the realistic model according to another one exemplary embodiment.This realistic model may be used in camera optical system.

With reference to Figure 26, bottom electrode 212, lower prism array 214, upper prism array 216, top electrode 218 and travel path of incident light change unit 220 sequence stack in realistic model.Stacking element can contact with each other interface betwixt.Ccd image sensor 210 is arranged under the bottom electrode 212 of realistic model.As a result, stacking in realistic model element is positioned at above ccd image sensor 210.Adjusting frame 222 is arranged on the side surface of the laminated components comprising bottom electrode 212, lower prism array 214, upper prism array 216 and top electrode 218, and above ccd image sensor 210.Adjusting frame 222 regulates upper distance between prism array 216 and lower prism array 214.By adjustment in use framework 222, the clearance G 4 between the microprism 216B of upper prism array 216 and the inclined surface faced by microprism 214B of lower prism array 214 can be adjusted to and be less than about 10 μm.Upper prism array 216 comprises multiple annular microprism 216B, and its xsect is with right angle.Light absorption units 224 is arranged in the vertical surface of each annular microprism 216B, and namely send the surface of the light be totally reflected from the inclined surface of each annular microprism 216B, wherein this inclined surface is total internal reflection surface.Lower prism array 214 corresponds to the light path altering unit in the path for changing the light from the incidence of upper prism array 216, and makes light vertical incidence on ccd image sensor 210.Lower prism array 214 is counter pairs of upper prism array 216, comprises multiple annular microprism 214B.The multiple annular microprism 214B of lower prism array 214 is counter pairs of the multiple annular microprism 216B of upper prism array 216.Multiple annular microprism 214B corresponds respectively to multiple annular microprism 216B.It can be Fresnel lens that travel path of incident light changes unit 220.In realistic model, the material of upper prism array 216 and lower prism array 214 can be KTN.Top electrode 218 and bottom electrode 212 are transparency electrodes, and about 0V can put between top electrode 218 and bottom electrode 212 to the voltage of about 250V scope, and voltage can continuously change.The horizontal width of realistic model is about 1cm, and the overall height of upper prism array 216 and lower prism battle array 214 is about 10 μm.The gross thickness of realistic model is about 1mm.

Figure 27 is the equivalent circuit diagram of the realistic model about Figure 26.In figure 27, V _shutterrepresent and be applied to the upper prism array 216 of Figure 26 and the voltage of lower prism array 214.C _shutterthe electric capacity of prism array 216 and lower prism array 214 in expression.R _urepresent pull-up resistor.In addition, V represents the voltage of the optical devices being applied to the optical shutter comprising Figure 26.

Figure 28 illustrates the curve map about the relation between the voltage of the realistic model of Figure 26 and transmissivity.In Figure 28, transverse axis represents the voltage being applied to upper prism array 216 and lower prism array 214 in realistic model by top electrode 218 and bottom electrode 212.In addition, Z-axis represents the transmissivity of upper the prism array 216 and lower prism array 214 applied according to voltage.

It is about 26 degree that angle is determined in the total internal reflection of each annular microprism 216B in the upper prism array 216 formed by KTN material.Upper prism array 216 is formed by this way, and the alinternal reflection angle namely going up prism array 216 reduces according to external action (namely voltage applies).The incident angle being incident on the image light on incidence surface (namely going up the total internal reflection surface of each annular microprism 216B of prism array 216) is less than about 26 degree by maintaining consistently and is greater than the minimum alinternal reflection angle that can apply acquisition according to voltage.Such as, when minimum alinternal reflection angle is about 24 degree, the incident angle of image light can maintain about 25 degree.

With reference to Figure 28, when voltage is applied for about 0 (when the intensity of applied electric field is about 0), the transmissivity of realistic model is about 100%.Therefore, realistic model is called shutter opening state.Along with voltage apply increase (institute apply electric field intensity increase), the transmissivity of realistic model is about 0%.That is, along with voltage increases, the alinternal reflection angle of upper prism array 216 is determined 26 degree, angle from total internal reflection and is reduced and become the incident angle being less than image light.Therefore, the image light be incident on prism array 216 is totally reflected.Finally, realistic model becomes shutter close state.In Figure 28, transmissivity applies according to voltage and changes.According to such result, apply by continuously changing voltage within the scope of given voltage applying, transmissivity can be continuously controlled.

Meanwhile, if upper prism array 216 is formed by this way, the alinternal reflection angle namely going up prism array 216 applies due to external action and voltage and becomes large, then apply relevant effect to voltage with contrary about describing before Figure 28.That is, when voltage is applied for about 0, realistic model becomes shutter close state, and along with voltage applies to increase, realistic model becomes shutter opening state.

Figure 29 is curve map, and the time response applied about voltage is shown, namely when voltage is applied to realistic model, fast door state changes speed.

With reference to Figure 29, after voltage applies, increase about 80% in 1ns internal transmission factor.This result means, the realistic model of shutter close state is changed into shutter opening state and has only used about 1ns.Because this fast door state change is reversible, only use about 1ns so that the realistic model of shutter opening state is become shutter close state so the result of Figure 29 means.With compared with the image procossing high-speed shutter of correlation technique, the shutter speed of about 1ns is exceedingly fast.Therefore, can rapid translating or modulation image.

Figure 30 to Figure 35 is curve map, and the shutter speed according to the voltage type being applied to realistic model is shown.

Figure 30 to Figure 32 illustrates the transmissivity change when executed alive waveform is square wave.Figure 33 to Figure 35 illustrates the transmissivity change when executed alive waveform is sine wave.The waveform of voltage is not limited to square wave and sine wave.

With reference to Figure 30 to Figure 32, when applied voltage is square wave, until about 10MHz, it is stable that transmissivity changes, and transmissivity change occurs distortion at 1GHz place.With reference to Figure 33 to 35, when applied voltage is sine wave, until about 1GHz, it is stable that transmissivity changes.

Figure 36 is the figure of the optical devices comprising optical shutter according to another one exemplary embodiment, and these optical devices can be the camera arrangements for finding range.

With reference to Figure 36, optical devices comprise light source 710, light source drive 720, controller of camera 730, optical image sensor 750, first lens LZ1 and the second lens LZ2, wave filter 780 and optical shutter 770.First lens LZ1, wave filter 780, optical shutter 770, second lens LZ2 and optical image sensor 750 can be aimed at along single direction, and may reside on same optical axis.The light head for target 700 irradiated from light source 710 is launched.Here, the light TL irradiated can be the light with specific wavelength, such as infrared ray.The light TL irradiated can irradiate with the form of pulsating wave or sine wave.Light source 710 is controlled by light source drive 720.The operation of light source drive 720 is controlled by controller of camera 730.The operation of controller of camera 730 control both optical shutter 770 and optical image sensor 750.Optical image sensor 750 can be CCD or CMOS.The reflected light RL that first lens LZ1 collects from target 700 makes reflected light RL can be suitable for being incident on wave filter 780.Wave filter 780 is the bandpass filter for removing the noise light except irradiating light TL, and can be IR bandpass filter.Second lens LZ2 is used for the light launched from optical shutter 770 to focus on optical image sensor 750.Optical shutter 770 can be one of optical shutter of providing of foregoing example embodiment.

3D camera, laser radar (LADAR) technology, the display device comprising liquid crystal display (LCD) and needs can be applied to according to the optical shutter of one or more one exemplary embodiment and be used for quick other device controlling the transmission of incident light and the optical device of stop.

By using the optical shutter according to one or more one exemplary embodiment, the electrooptical effect of solid electro-optic material can be utilized, thus optical shutter can be durable in use.

In addition, optical shutter can operate with the no-delay gate speed of about 1ns, thus image can be rendered adequately treated quite quickly.

In addition, optical shutter can be fabricated to thin plate, thus optical shutter can be minimized.Because optical shutter has by by crystal growth being the thin plate then structure that formed of micro Process by Material growth, so can reduce material cost and manufacturing cost.

Should be appreciated that one exemplary embodiment described herein should only be understood in illustrative meaning, and be not used in restriction.Feature in each one exemplary embodiment or the description of aspect should it has been generally acknowledged that for other similar characteristics in other one exemplary embodiment or aspect be available.

Claims

1. an optical shutter, comprise electro-optical medium, this electro-optical medium is transparent and is in reactive solid, described electro-optical medium comprises total internal reflection surface, be transfused at this total internal reflection surface place alinternal reflection angle and change, the light wherein incided in described electro-optical medium is refracted or total internal reflection according to the described alinternal reflection angle changed by described input at described total internal reflection surface place

A surface coverage of wherein said electro-optical medium has light absorping film, and a described surface is not on the path of light.

2. optical shutter as claimed in claim 1, also comprises the first light path altering unit, and the path changing of the light through described electro-optical medium is that vertical incidence is on target object by this first light path altering unit.

3. optical shutter as claimed in claim 2, also comprises the second light path altering unit be arranged at before described electro-optical medium.

4. optical shutter as claimed in claim 2, wherein said electro-optical medium comprises the first prism or the first prism array, and described first light path altering unit comprises the second prism or the second prism array.

5. optical shutter as claimed in claim 4, wherein said electro-optical medium comprises the first prism, described first light path altering unit comprises the second prism, the shape of the first prism of described electro-optical medium is substantially identical with the shape of the second prism of described first light path altering unit, and arranges be mutually symmetrical.

6. optical shutter as claimed in claim 4, wherein said electro-optical medium comprises the first prism array, this first prism array comprises multiple first microprism, described first light path altering unit comprises the second prism array, this second prism array comprises multiple second microprism, and the xsect of the xsect of multiple first microprisms of described electro-optical medium and multiple second microprisms of described first light path altering unit is symmetrical.

7. optical shutter as claimed in claim 6, wherein said multiple first microprism and described multiple second microprism are annular microprism.

8. optical shutter as claimed in claim 3, wherein said second light path altering unit comprises lens unit, and this lens unit is transferred to described electro-optical medium using the light be incident in this second light path altering unit as directional light.

9. optical shutter as claimed in claim 4, wherein on the path of light, has the gap of uniform thickness between described electro-optical medium and described first light path altering unit.

10. optical shutter as claimed in claim 4, on the surface that wherein said light absorping film is attached to the first prism of described electro-optical medium or on a surface of the first prism array of described electro-optical medium, this surface of described first prism or described first prism array is the incident light beam strikes surface be thereon totally reflected.

11. optical shutters as claimed in claim 9, wherein said gap comprises optical medium, and this optical medium has than air, described first prism and described second prism or described first prism array and the less refractive index of described second prism array.

12. optical shutters as claimed in claim 1, also comprise the travel path of incident light be arranged on before described electro-optical medium and change unit.

13. optical shutters as claimed in claim 12, wherein said travel path of incident light changes unit and comprises prism or prism array.

14. optical shutters as claimed in claim 12, it is enter this travel path of incident light and change the shape of the incident light of unit for changing thus make this incident light be incident on unit on described electro-optical medium as directional light that wherein said travel path of incident light changes unit.

15. optical shutters as claimed in claim 1, wherein said electro-optical medium is prism or prism array, and incident light is totally reflected or transmission by described prism or prism array based on described input.

16. optical shutters as claimed in claim 15, the light incident surface of wherein said prism or the light incident surface of described prism array tilt relative to described incident light.

17. optical shutters as claimed in claim 13, wherein said prism array comprises the microprism of multiple bar shaped or the microprism of multiple annular.

18. optical shutters as claimed in claim 1, wherein said input is the electric field formed by applying voltage.

19. optical shutters as claimed in claim 15, wherein said light absorping film is arranged at a surface of described prism or a surface at described prism array, and this surface of described prism or prism array is the incident light beam strikes surface be thereon totally reflected.

20. optical shutters as claimed in claim 16, wherein said light absorping film is arranged at the surface of described prism array or the surface of described prism, and the surface of described prism or prism array is not within the light path.

21. optical shutters as claimed in claim 1, wherein said electro-optical medium is incident on object tilt thereon relative to the light launched from this electro-optical medium.

22. 1 kinds of cameras, comprise optical shutter, and wherein said optical shutter comprises optical shutter according to claim 1.

23. 1 kinds of cameras, comprise optical shutter, and wherein said optical shutter comprises optical shutter according to claim 2.

24. cameras as claimed in claim 23, also comprise the second light path altering unit be arranged at before described electro-optical medium.

25. cameras as claimed in claim 23, wherein said electro-optical medium comprises the first prism or the first prism array, and described first light path altering unit comprises the second prism or the second prism array.

26. 1 kinds of display device, comprise optical shutter, and wherein said optical shutter comprises optical shutter according to claim 1.

27. 1 kinds of display device, comprise optical shutter, and wherein said optical shutter comprises optical shutter according to claim 2.

28. display device as claimed in claim 26, also comprise the travel path of incident light be arranged at before described electro-optical medium and change unit.

29. display device as claimed in claim 27, also comprise the second light path altering unit be arranged at before described electro-optical medium.

30. display device as claimed in claim 27, wherein said electro-optical medium comprises the first prism or the first prism array, and described first light path altering unit comprises the second prism or the second prism array.

The method of 31. 1 kinds of operating optical shutters, this optical shutter comprises electro-optical medium, this electro-optical medium is transparent and is in reactive solid, and this electro-optical medium comprises total internal reflection surface, be transfused at this total internal reflection surface place alinternal reflection angle and change, the light wherein incided in described electro-optical medium is refracted or total internal reflection according to the described alinternal reflection angle changed by described input at described total internal reflection surface place, described method comprises the alinternal reflection angle being changed described electro-optical medium by applying voltage to described electro-optical medium

The method of 32. operating optical shutters as claimed in claim 31, also comprises the alinternal reflection angle continuously changing described electro-optical medium by applying voltage continuously to described electro-optical medium.

The method of 33. operating optical shutters as claimed in claim 31, the alinternal reflection angle of wherein said electro-optical medium reduces by applying voltage.

The method of 34. operating optical shutters as claimed in claim 31, the alinternal reflection angle of wherein said electro-optical medium increases by applying voltage.

The method of 35. operating optical shutters as claimed in claim 31, angle is determined in the total internal reflection that the incident angle being wherein incident on the light on described electro-optical medium is less than described electro-optical medium, and is greater than the minimum alinternal reflection angle formed by applying voltage.

The method of 36. operating optical shutters as claimed in claim 31, angle is determined in the total internal reflection that the incident angle being wherein incident on the light on described electro-optical medium is greater than described electro-optical medium, and is less than the maximum alinternal reflection angle formed by applying voltage.

37. 1 kinds of optical devices, comprising:

Refracting element, has one of at least two refractive indexes, when the first input is received, and one at least two refractive indexes described in this refracting element has, when the second input is received, another at least two refractive indexes described in this refracting element has; And

Imageing sensor, this image sensor operable receives the light by described refracting element refraction and transmission,

Wherein when described first input is received, light reflects towards described imageing sensor by described refracting element, and when described second input is received, light reflects away from described imageing sensor by described refracting element,

A surface coverage of wherein said refracting element has light absorping film, and a described surface is not on the path of light.

38. optical devices as claimed in claim 37, wherein said refracting element comprises optical input surface and light output surface, and one of the described optical input surface of wherein said refracting element and described light output surface be out of plumb relative to only tilting of being received by described refracting element.

39. optical devices as claimed in claim 38, also comprise collimation unit, and this collimation unit is by optical alignment and by the light output of collimation to described refracting element.