CN102033213A - Method and device for resetting magnetic resistance of multi-element tunnel - Google Patents
Method and device for resetting magnetic resistance of multi-element tunnel Download PDFInfo
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- CN102033213A CN102033213A CN2009101966278A CN200910196627A CN102033213A CN 102033213 A CN102033213 A CN 102033213A CN 2009101966278 A CN2009101966278 A CN 2009101966278A CN 200910196627 A CN200910196627 A CN 200910196627A CN 102033213 A CN102033213 A CN 102033213A
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Abstract
The invention relates to a method and a device for resetting the magnetic resistance of a multi-element tunnel. A lead wire which can provide a pulse resetting magnetic field for magnetic sensing elements when a pulse current is applied can apply the pulse current to the magnetic sensing elements, the strength value of the offered magnetic field is not less than a half of the strength value of the magnetic isotropic field of each magnetic sensing element, the direction of the magnetic field is not vertical to the magnetic isotropic axes of each magnetic sensing element, and the magnetized strength of the most magnetic sensing elements are arranged along the same direction of each magnetic isotropic axes under the action of the pulse resetting magnetic field, wherein the angle between the direction and the pulse resetting magnetic field is less than 90 degrees. The method and the device for resetting the magnetic resistance of the multi-element tunnel can reset the magnetic resistance of the multi-element tunnel of a sensor, thereby eliminating a hysteresis loop when the magnetic filed sensor is used.
Description
Technical field
The present invention relates to a kind of method and device of the multielement tunnel magnetoresistive of resetting, the particularly a kind of method and device that can reduce the replacement multielement tunnel magnetoresistive of required replacement pulsed magnetic field.
Background technology
Typical magnetic material has multiple domain structure adjacent one another are because will reduce the static energy of magnetic.The jumping of multiple domain structure under current drives causes Barkhausen (Barkhausen) to jump and magnetic hysteresis loop (hysterisis) phenomenon.Therefore the magnetic field sensor of making by these typical soft magnetic materials in use signal Barkhausen often occurs and jump and the magnetic hysteresis loop behavior, and limited thus by the range of application of common soft magnetic material as magnetic field sensor, although its susceptibility to magnetic field will be far above Hall element.
Address this problem, technical scheme according to patent document 1, magnetic field sensor is by multielement tunnel magnetoresistive (Magnetic Tunneling Junction, MTJ) form, wherein, by selecting the size of each magnetic strength survey element on its magnetic free layer, material and direction make its each magnetic strength survey element and have only a single magnetic domain under the effects of the pulsed magnetic field of the magnetic anisotropy field of surveying element greater than the free layer magnetic strength that is provided with.When a pulse current passes through, if survey the magnetic anisotropy field H of element greater than the free layer magnetic strength by the replacement pulsed magnetic field of its generation
kThe time, each magnetic strength of tunnel magnetoresistive free layer is surveyed element becomes single magnetic domain.As shown in Figure 1, the magnetic anisotropy direction of principal axis that each magnetic strength is surveyed element is with that pulse current is set is parallel, and under the effect of replacement pulse current, no matter the history of crossing demagnetizing field how, all magnetic strengths are surveyed the magnetization of elements all can be along the direction arrangement that pulsed magnetic field is set.When pulse current is removed, magnetic strength is surveyed the magnetization of element will swing to the magnetic anisotropy direction of principal axis gradually.Because of the transient state magnetization becomes an angle of 90 degrees with the magnetic anisotropy axle, the magnetization after pulse current is removed has half along the pulse towards direction of current and second half equal number is arranged in opposite direction.Therefore the magnetic field sensor of such multielement tunnel magnetoresistive is made up of a plurality of single magnetic domain elements, has removed the root that produces the domain motion of Barkhausen's redirect, provides one not have Barkhausen to jump and the magnetic field sensor of magnetic hysteresis loop.
Patent document 1: United States Patent (USP), the patent No.: US7394248B1
Summary of the invention
The direction that existing technical scheme requires each magnetic strength to survey the magnetic anisotropy axle of element is arranged towards sense of current along the pulse, and it is identical but direction is opposite along the axial some single magnetic domain elements of its magnetic anisotropy that the replacement pulse current creates number.This technical scheme need satisfy following two requirements:
(1) the magnetic domain number of elements wants enough big, for example greater than 50, makes the each repeatability of back on statistical significance of resetting enough good;
(2) each magnetic strength survey element of replacement free layer makes it become the needed replacement pulsed magnetic field of magnetic single domain H
rBe greater than magnetic strength and survey the magnetic anisotropy field H of element
k, i.e. H
r＞H
k
The object of the present invention is to provide improving one's methods and installing of a kind of multielement tunnel magnetoresistive of resetting, to eliminate magnetic field sensor Barkhausen's redirect and magnetic hysteresis loop in use, it need not the minimum number that the regulation magnetic strength is surveyed element, makes magnetic sensing structure to extend according to demand and dwindles; And survey element and raise the required replacement magnetic field H of structure to single magnetic along reset each magnetic strength of magnetic anisotropy direction of principal axis
rOnly need greater than magnetic anisotropic field H
kHalf, i.e. H
r＞H
k/ 2, it is achieved through the following technical solutions.
A kind of magnetic field sensor device of multielement tunnel magnetoresistive of can resetting, it comprises: one or more magnetic strength with multiple-level stack structure is surveyed element, and each magnetic strength is surveyed the magnetic anisotropy axle that unit have definite its first-selected magnetization direction; One surveys the lead that the apex electrode of element links together with each magnetic strength, and this lead is total apex electrode; One surveys the lead that the bottom electrode of element links together with each magnetic strength, and this lead is total bottom electrode; One can survey the lead that element provides the replacement pulsed magnetic field to magnetic strength when applying pulse current, its field strength values that provides is not less than half of magnetic anisotropy field intensity level that magnetic strength is surveyed element, and this magnetic direction is not orthogonal to the magnetic anisotropy axle that magnetic strength is surveyed element.
Wherein, magnetic strength survey element be produced mangneto tunnel magnetoresistive with multiple-level stack structure (MagnetoTunneling Junction, MTJ) or giant magnetoresistance (Magnetoresistance, GMR) device of effect.
Wherein, magnetic strength is surveyed elemental characteristic plane length breadth ratio and is not less than 1.2.
Can survey element to magnetic strength when wherein, applying pulse current provides the lead of replacement pulsed magnetic field to be total apex electrode.
Can survey element to magnetic strength when wherein, applying pulse current provides the lead of replacement pulsed magnetic field to be total bottom electrode.
Wherein, can be arranged at total apex electrode top to the lead that magnetic strength be surveyed element and provide the replacement pulsed magnetic field when applying pulse current, and and total apex electrode between an insulation course is arranged.
Wherein, can be arranged at total bottom electrode below to the lead that magnetic strength be surveyed element and provide the replacement pulsed magnetic field when applying pulse current, and and total bottom electrode between an insulation course is arranged.
Can survey element to magnetic strength when wherein, applying pulse current provides the magnetic direction that lead provided of replacement pulsed magnetic field to be parallel to the magnetic anisotropy axle that magnetic strength is surveyed element.
A kind of method of multielement tunnel magnetoresistive of the magnetic field sensor of resetting, it may further comprise the steps:
Make one or more magnetic strength with multiple-level stack structure and survey element, each described magnetic strength is surveyed unit and is have a magnetic anisotropy axle of determining its first-selected magnetization direction;
Be provided with one each magnetic strength surveyed the lead that the apex electrode of element links together, this lead is total apex electrode;
Be provided with one each magnetic strength surveyed the lead that the bottom electrode of element links together, this lead is total bottom electrode;
Be provided with one and can survey the lead that element provides the replacement pulsed magnetic field to magnetic strength when applying pulse current, its field strength values that provides is not less than half of magnetic anisotropy field intensity level that magnetic strength is surveyed element, and this magnetic direction is not orthogonal to the magnetic anisotropy axle that magnetic strength is surveyed element;
Apply pulse current, under the replacement pulsed magnetic field action, exhausted most magnetic strength is surveyed the magnetization of element and is arranged along a direction of its magnetic anisotropy axle, and this direction and replacement pulsed magnetic field angulation are less than 90 degree.
Wherein, magnetic strength survey element be produced mangneto tunnel magnetoresistive with multiple-level stack structure (MagnetoTunneling Junction, MTJ) or giant magnetoresistance (Magnetoresistance, GMR) device of effect.
Wherein, magnetic strength is surveyed elemental characteristic plane length breadth ratio and is not less than 1.2.
Can survey element to magnetic strength when wherein, applying pulse current provides the lead of replacement pulsed magnetic field to be total apex electrode.
Can survey element to magnetic strength when wherein, applying pulse current provides the lead of replacement pulsed magnetic field to be total bottom electrode.
Wherein, can be arranged at total apex electrode top to the lead that magnetic strength be surveyed element and provide the replacement pulsed magnetic field when applying pulse current, and and total apex electrode between an insulation course is arranged.
Wherein, can be arranged at total bottom electrode below to the lead that magnetic strength be surveyed element and provide the replacement pulsed magnetic field when applying pulse current, and and total bottom electrode between an insulation course is arranged.
Can survey element to magnetic strength when wherein, applying pulse current provides the magnetic direction that lead provided of replacement pulsed magnetic field to be parallel to the magnetic anisotropy axle that magnetic strength is surveyed element.
Positive progressive effect of the present invention is:
(1) need not the minimum number that the regulation magnetic strength is surveyed element, make the magnetic sensing structure of no magnetic hysteresis loop to extend according to demand and dwindle;
(2) reset each magnetic strength survey element to the required replacement magnetic field H of single domain structure along the magnetic anisotropy direction of principal axis
rOnly need greater than magnetic anisotropic field H
kHalf, i.e. H
r＞H
k/ 2;
(3) less replacement pulsed magnetic field makes control that the lead of replacement pulsed magnetic field and the cost reduction that magnetic strength is surveyed the distance between element are provided, and has improved the manufacture process rate of profit;
(4) less replacement magnetic field only needs the pulse current amplitude of small-scale, thereby has reduced electrical source consumption, therefore reliability and the life-span that can improve sensor when being used for mobile device, the therefore reliability and the life-span of also having improved system.
Description of drawings
Fig. 1 is the method schematic diagram of existing replacement multielement tunnel magnetoresistive;
Fig. 2 is the method schematic diagram of the replacement multielement tunnel magnetoresistive of embodiment 1;
Fig. 3 is the sectional view along the A-A direction of Fig. 2;
Fig. 4 is the method schematic diagram of the replacement multielement tunnel magnetoresistive of embodiment 2;
Fig. 5 is the sectional view along the B-B direction of Fig. 4;
Fig. 6 is the method schematic diagram of the replacement multielement tunnel magnetoresistive of embodiment 3;
Fig. 7 is the sectional view along the C-C direction of Fig. 6.
Embodiment
Provide preferred embodiment of the present invention below in conjunction with accompanying drawing, to describe technical scheme of the present invention in detail.
Each magnetic strength is in an embodiment surveyed unit and is have a magnetic anisotropy axle of determining its first-selected magnetization direction, its characteristic plane length breadth ratio is not less than 1.2, and it is produced mangneto tunnel magnetoresistive (the Magneto Tunneling Junction with multiple-level stack structure, MTJ) or giant magnetoresistance (Magnetoresistance, GMR) device of effect.
As Fig. 2, shown in Figure 3, among the figure, 1,2,3,4 is wherein four elements that a plurality of magnetic strengths are surveyed the element magnetic field sensor, H
K1, H
K2, H
K3, H
K4Be respectively their magnetic anisotropy axle, I
rBe pulse current, H
rBe the replacement pulsed magnetic field.Fig. 3 be among Fig. 2 along the sectional view of A-A direction, 5 are total apex electrode, 6 are total bottom electrode.In total apex electrode 5, apply pulse current I
r, it surveys the replacement pulsed magnetic field H that element produced to magnetic strength
rGreater than its magnetic anisotropy field H
kHalf, i.e. H
f＞H
k/ 2.At replacement pulsed magnetic field H
rUnder the effect, all magnetic strengths are surveyed the magnetization of element along its magnetic anisotropy axle H
kDirection arrange.In this embodiment, magnetic strength is surveyed the magnetic anisotropy axle H of element
kBe parallel to replacement pulsed magnetic field H
r, H among Fig. 2
rDirection be bottom-up, therefore applying pulse current I at every turn
rAfter, the magnetization that all magnetic strengths are surveyed element all is along its magnetic anisotropy axle H
kBottom-up direction is arranged, and it is single domain structure, has realized the replacement of the multielement tunnel magnetoresistive of sensor, has eliminated magnetic field sensor Barkhausen's redirect and magnetic hysteresis loop in use.
As Fig. 4, shown in Figure 5, among the figure, 1,2,3,4 is the magnetic strength survey element of magnetic field sensor, H
K1, H
K2, H
K3, H
K4Be respectively their magnetic anisotropy axle, I
rBe pulse current, H
rBe the replacement pulsed magnetic field.Fig. 5 be among Fig. 4 along the sectional view of B-B direction, 5 are total apex electrode, 6 are total bottom electrode.In total apex electrode 5, apply pulse current I
r, it surveys the replacement pulsed magnetic field H that element produced to magnetic strength
rGreater than its magnetic anisotropy field H
kThe replacement pulsed magnetic field H of half
r, i.e. H
r＞H
k/ 2.Magnetic anisotropy field H
kBecome the angle of spending less than 90 with the replacement pulsed magnetic field.At replacement pulsed magnetic field H
rUnder the effect, each magnetic strength is surveyed the magnetization of element along its magnetic anisotropy axle H
kDirection arrange.In this embodiment, H
rTherefore direction in Fig. 4 is applying pulse current I for from up to down at every turn
rAfter, it all is along its magnetic anisotropy axle H that all magnetic strengths are surveyed element
kDeflection direction arrangement down, and it is single domain structure, has realized the replacement of the multielement tunnel magnetoresistive of sensor, has eliminated magnetic field sensor Barkhausen's redirect and magnetic hysteresis loop in use.
In the present invention, the magnetic anisotropy axle that magnetic strength is surveyed element can be parallel, also can be uneven.As 6, shown in Figure 7, among the figure, 1,2,3,4 is the magnetic strength survey element of magnetic field sensor, H
K1, H
K2, H
K3, H
K4Be respectively their magnetic anisotropy axle, I
rBe pulse current, H
rBe the replacement pulsed magnetic field.Fig. 7 be among Fig. 6 along the sectional view of C-C direction, 5 are total apex electrode, 6 are total bottom electrode, 7 is insulation course, 8 can survey the lead that element provides the replacement pulsed magnetic field to magnetic strength when applying pulse current.When applying pulse current, can survey element and provide in the lead 8 of replacement pulsed magnetic field and apply pulse current I magnetic strength
r, it is surveyed element to magnetic strength and produces an intensity level greater than its magnetic anisotropy field H
kThe replacement pulsed magnetic field H of half
r, i.e. H
r＞H
k/ 2.At replacement pulsed magnetic field H
rAfter the effect, each magnetic strength is surveyed the magnetization of element along its magnetic anisotropy axle H
kDirection arrange.Applying pulse current I at every turn
rAfter, it all is along its magnetic anisotropy axle H that the magnetic strength of the overwhelming majority is surveyed element
kDirection on the deflection is arranged, and it is single domain structure, has realized the replacement of the multielement tunnel magnetoresistive of sensor, has eliminated magnetic field sensor Barkhausen's redirect and magnetic hysteresis loop in use.
Above embodiment is used to illustrate the present invention, but the present invention is not limited thereto.Under the situation that does not deviate from principle of the present invention and claim, those skilled in the art can carry out certain combined transformation to embodiment, as can survey element to magnetic strength when applying pulse current and provide the lead of replacement pulsed magnetic field can be arranged at total bottom electrode below, the characteristic plane that magnetic strength is surveyed element can be oval or other shape, and the number of perhaps magnetic strength being surveyed element increases or minimizing etc.Therefore, embodiment of the present invention is made well know in the art being equal to change or replacing and all do not exceed exposure of the present invention and protection domain.
Claims (16)
1. magnetic field sensor device of multielement tunnel magnetoresistive of can resetting, it comprises that one or more magnetic strength with multiple-level stack structure is surveyed element, and each magnetic strength is surveyed unit and have a magnetic anisotropy axle of determining its first-selected magnetization direction; One surveys the lead that the apex electrode of element links together with each magnetic strength, and this lead is total apex electrode; One surveys the lead that the bottom electrode of element links together with each magnetic strength, and this lead is total bottom electrode; It is characterized in that, it also comprises: one can survey the lead that element provides the replacement pulsed magnetic field to magnetic strength when applying pulse current, its field strength values that provides is not less than half of magnetic anisotropy field intensity level that magnetic strength is surveyed element, and this magnetic direction is not orthogonal to the magnetic anisotropy axle that magnetic strength is surveyed element.
2. the magnetic field sensor device of multielement tunnel magnetoresistive of can resetting as claimed in claim 1, it is characterized in that, it is produced mangneto tunnel magnetoresistive (the MagnetoTunneling Junction with multiple-level stack structure that described magnetic strength is surveyed element, MTJ) or giant magnetoresistance (Magnetoresistance, GMR) device of effect.
3. the magnetic field sensor device of multielement tunnel magnetoresistive of can resetting as claimed in claim 1 is characterized in that, described magnetic strength is surveyed elemental characteristic plane length breadth ratio and is not less than 1.2.
4. the magnetic field sensor device of multielement tunnel magnetoresistive of can resetting as claimed in claim 1 is characterized in that, describedly can survey element to magnetic strength when applying pulse current and provide the lead of replacement pulsed magnetic field to be total apex electrode.
5. the magnetic field sensor device of multielement tunnel magnetoresistive of can resetting as claimed in claim 1 is characterized in that, describedly can survey element to magnetic strength when applying pulse current and provide the lead of replacement pulsed magnetic field to be total bottom electrode.
6. the magnetic field sensor device of multielement tunnel magnetoresistive of can resetting as claimed in claim 1, it is characterized in that, describedly can survey element to magnetic strength when applying pulse current and provide the lead of replacement pulsed magnetic field to be arranged at total apex electrode top, and and total apex electrode between an insulation course is arranged.
7. the magnetic field sensor device of multielement tunnel magnetoresistive of can resetting as claimed in claim 1, it is characterized in that, describedly can survey element to magnetic strength when applying pulse current and provide the lead of replacement pulsed magnetic field to be arranged at total bottom electrode below, and and total bottom electrode between an insulation course is arranged.
8. the magnetic field sensor device of multielement tunnel magnetoresistive of can resetting as claimed in claim 1, it is characterized in that, describedly can survey element to magnetic strength when applying pulse current and provide the magnetic direction that lead provided of replacement pulsed magnetic field to be parallel to the magnetic anisotropy axle that magnetic strength is surveyed element.
9. the method for the multielement tunnel magnetoresistive of the magnetic field sensor of resetting, it may further comprise the steps:
Make one or more magnetic strength with multiple-level stack structure and survey element, each described magnetic strength is surveyed unit and is have a magnetic anisotropy axle of determining its first-selected magnetization direction;
Be provided with one each magnetic strength surveyed the lead that the apex electrode of element links together, this lead is total apex electrode;
Be provided with one each magnetic strength surveyed the lead that the bottom electrode of element links together, this lead is total bottom electrode;
It is characterized in that it is further comprising the steps of;
Be provided with one and can survey the lead that element provides the replacement pulsed magnetic field to magnetic strength when applying pulse current, its field strength values that provides is not less than half of magnetic anisotropy field intensity level that magnetic strength is surveyed element, and this magnetic direction is not orthogonal to the magnetic anisotropy axle that magnetic strength is surveyed element;
Apply pulse current, under the replacement pulsed magnetic field action, the magnetic strength of the overwhelming majority is surveyed the magnetization of element and is arranged along a direction of its magnetic anisotropy axle, and this direction and replacement pulsed magnetic field angulation are less than 90 degree.
10. the method for the multielement tunnel magnetoresistive of replacement magnetic field sensor as claimed in claim 9, it is characterized in that, it is produced mangneto tunnel magnetoresistive (the MagnetoTunneling Junction with multiple-level stack structure that described magnetic strength is surveyed element, MTJ) or giant magnetoresistance (Magnetoresistance, GMR) device of effect.
11. the method for the multielement tunnel magnetoresistive of replacement magnetic field sensor as claimed in claim 9 is characterized in that, described magnetic strength is surveyed elemental characteristic plane length breadth ratio and is not less than 1.2.
12. the method for the multielement tunnel magnetoresistive of replacement magnetic field sensor as claimed in claim 9 is characterized in that, describedly can survey element to magnetic strength when applying pulse current and provide the lead of replacement pulsed magnetic field to be total apex electrode.
13. the method for the multielement tunnel magnetoresistive of replacement magnetic field sensor as claimed in claim 9 is characterized in that, describedly can survey element to magnetic strength when applying pulse current and provide the lead of replacement pulsed magnetic field to be total bottom electrode.
14. the method for the multielement tunnel magnetoresistive of replacement magnetic field sensor as claimed in claim 9, it is characterized in that, describedly can survey element to magnetic strength when applying pulse current and provide the lead of replacement pulsed magnetic field to be arranged at total apex electrode top, and and total apex electrode between an insulation course is arranged.
15. the method for the multielement tunnel magnetoresistive of replacement magnetic field sensor as claimed in claim 9, it is characterized in that, describedly can survey element to magnetic strength when applying pulse current and provide the lead of replacement pulsed magnetic field to be arranged at total bottom electrode below, and and total bottom electrode between an insulation course is arranged.
16. the magnetic field sensor device of multielement tunnel magnetoresistive of can resetting as claimed in claim 9, it is characterized in that, describedly can survey element to magnetic strength when applying pulse current and provide the magnetic direction that lead provided of replacement pulsed magnetic field to be parallel to the magnetic anisotropy axle that magnetic strength is surveyed element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101966278A CN102033213A (en) | 2009-09-28 | 2009-09-28 | Method and device for resetting magnetic resistance of multi-element tunnel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101966278A CN102033213A (en) | 2009-09-28 | 2009-09-28 | Method and device for resetting magnetic resistance of multi-element tunnel |
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|---|---|
| CN102033213A true CN102033213A (en) | 2011-04-27 |
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|---|---|---|---|
| CN2009101966278A Pending CN102033213A (en) | 2009-09-28 | 2009-09-28 | Method and device for resetting magnetic resistance of multi-element tunnel |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103091649A (en) * | 2011-10-28 | 2013-05-08 | 爱盛科技股份有限公司 | Magnetic sensing device |
| CN108363025A (en) * | 2018-05-14 | 2018-08-03 | 美新半导体（无锡）有限公司 | Magnetic field sensor |
-
2009
- 2009-09-28 CN CN2009101966278A patent/CN102033213A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103091649A (en) * | 2011-10-28 | 2013-05-08 | 爱盛科技股份有限公司 | Magnetic sensing device |
| CN108363025A (en) * | 2018-05-14 | 2018-08-03 | 美新半导体（无锡）有限公司 | Magnetic field sensor |
| CN108363025B (en) * | 2018-05-14 | 2023-10-13 | 美新半导体（无锡）有限公司 | magnetic field sensor |
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Application publication date: 20110427 |