CN102032485B - Lighting device - Google Patents
Lighting device Download PDFInfo
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- CN102032485B CN102032485B CN2010105024146A CN201010502414A CN102032485B CN 102032485 B CN102032485 B CN 102032485B CN 2010105024146 A CN2010105024146 A CN 2010105024146A CN 201010502414 A CN201010502414 A CN 201010502414A CN 102032485 B CN102032485 B CN 102032485B
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- lead
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- led chip
- light
- emitting device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Led Device Packages (AREA)
Abstract
The present invention provides a light emitting device. The light emitting device is provided with an adhibition area of an LED chip on a first lead and is provided with a welding area of a lead from the LED chip on the second lead. Two leads are surrounded by a packaging resin part. Excellent light emitting equilibrium and heat radiating performance are kept when the light emitting surface of the light emitting device is a smaller square. Furthermore, a part which is opposite with the second lead in the first lead (11) forms a thin-wall part (13). The LED chip (3) is adhibited on the surface side of the thin-wall part (13). Furthermore the resin material of the packaging resin part (31) flows into the back side of the thin-wall part (13).
Description
Technical field
The present invention relates to the improvement of lighting device.
Background technology
The led chip that is installed in the lighting device has been required high brightness.Led chip is realized high brightness, and then the heat of led chip generation becomes problem.Therefore, all the time, carrying out being used for promoting the various improvement of heat radiation for lighting device.
For example, in the lighting device 50 shown in Figure 12 and Figure 13, mount by expansion (Mount) led chip 53 lead-in wire expose area, thereby improve thermal diffusivity.In this lighting device 50, use to have at the first lead-in wire 54 of surface mount led chip 53 with on the surface to be provided with for second lead-in wire 55,56 of welding from the welding region of the wire W2 of this led chip 53.And, forming as one around each lead-in wire 54,55,56 with potting resin 57, the material by potting resin 57 between the opposite face of the first lead-in wire the 54 and second lead-in wire 55,56 is formed with insulating regions 58.
In this lighting device 50, the first lead-in wire 54 that is used for mounting led chip 53 is exposed its back side (that is, not covered by the material of any potting resin 57), therefore, can utilize this back side to discharge expeditiously the heat of led chip 53.In the same manner, the second lead-in wire 55 also is exposed its back side, therefore can discharge expeditiously the heat of the led chip 53 that transmits by wire W2 to the outside.
In addition, please refer to patent documentation 1 and patent documentation 2 as the document that discloses the technical scheme relevant with the present invention.
Patent documentation 1: TOHKEMY 2008-251937 communique
Patent documentation 2: TOHKEMY 2005-353914 communique
Such as above-mentioned existing light-emitting device 50, if light-emitting area is elongated shape, then can mount led chip 53 in the position corresponding to the middle body of light-emitting area of the first lead-in wire 54 that exposes the back side, can keep good radiating effect by this first lead-in wire 54.
In addition, as mentioned above, led chip 53 is mounted in the situation of the first lead-in wire on 54, longer from the distance of the welding region of led chip 53 to second lead-in wires 55, its result, welding lead W2 is elongated.
On the other hand, the shape of light-emitting device is designed to various according to the difference of its purposes or purpose.As a kind of mode wherein, require to develop and have square or near the light-emitting device of foursquare light-emitting area.
Even the light-emitting device of this mode also need to be guaranteed respectively the pasting area of the first lead-in wire and the welding region of the second lead-in wire on its light-emitting area.No matter the size of light-emitting area is much, and each regional area all need to be more than the regulation area.
For this reason, if dwindle light-emitting area, guarantee that then second edge that goes between (edge relative with the first lead-in wire) of the welding region of regulation area often is configured near the substantial middle section of light-emitting area.
Opposite with this, if led chip is configured in the central authorities of light-emitting area, the problem that then exists led chip to overflow from the first lead-in wire.This is because of the insulating regions that needs to arrange specific thickness between the first lead-in wire and the second lead-in wire, therefore as mentioned above, if the edge of the second lead-in wire extends near the central portion of light-emitting area, then is difficult to make the first pasting area that goes between to be positioned at the central authorities of light-emitting area.
In addition, insulating regions is used for guaranteeing the insulation between the first lead-in wire and the second lead-in wire, and plays the first lead-in wire and second is gone between with the effect of sufficient mechanicalness intensity combination, therefore, need to have the thickness of regulation.
Summary of the invention
In order to address the above problem of the present invention providing as follows.
A kind of lighting device comprises: the first lead-in wire, and it has be used to the pasting area that mounts led chip on the surface, and its back side is exposed; The second lead-in wire, it has on the surface for the welding region of welding from the wire of above-mentioned led chip, and its back side is exposed; And potting resin section, it is around above-mentioned the first lead-in wire and above-mentioned the second lead-in wire, and between above-mentioned the first lead-in wire and above-mentioned the second lead-in wire, form insulating regions, wherein, the part relative with above-mentioned the second lead-in wire in above-mentioned the first lead-in wire forms thinner wall section, above-mentioned led chip is mounted on the face side of this thinner wall section, and the resin material of above-mentioned potting resin section flow into the rear side of this thinner wall section.
According to above-mentioned lighting device, with in the first lead-in wire with the relative part of the second lead-in wire as thinner wall section, and the material of potting resin section flow into its rear side, guarantee thus the first lead-in wire and the second mechanicalness strength of connection that goes between, therefore, can shorten as far as possible the edge (at this moment being the edge of thinner wall section) of the first lead-in wire and the distance between the second edge that goes between.
Led chip is mounted on this thinner wall section, and then the distance between led chip and the second lead-in wire approaches, and therefore, can utilize short welding lead.
A second aspect of the present invention provides as follows.That is, in the light-emitting device according to above-mentioned first aspect regulation, the thinner wall section of above-mentioned the first lead-in wire is positioned at the central authorities of light-emitting area.
Light-emitting device according to the second aspect of as above stipulating, even in the light-emitting device that for example has square and small-sized light-emitting area, led chip is mounted on the thinner wall section face side of the first lead-in wire that is positioned at its middle body, therefore, can keep well the luminous balance of light-emitting area.Even the edge at the second lead-in wire extends to middle body, and can't guarantee between the edge of thinner wall section of the first lead-in wire fully apart from the time, potting resin is flow into the back side of thinner wall section, therefore, can fully guarantee the bond strength of the first lead-in wire between going between with second.
The LED light-emitting device of the 3rd invention comprises: packaging body, and it has recess, and is formed by resin; Two lead-in wires, it is positioned at the bottom surface of recess; Led chip disposes respectively this led chip at least on two lead-in wires; And, potting resin, its landfill recess, and sealing LED chip, wherein, two lead-in wires expose the face of the opposition side opposite with the led chip installation side, have step-like otch at the face of the opposition side opposite with the led chip installation side.
The light of led chip emission can be random color, can utilize the visible light such as emission is blue, green, red or ultraviolet ray, ultrared led chip.And, there is no need to make all led chips of installing all to launch the light of same color, the LED of emission different colours light can be used in combination.
Can be mixed with dispersion or fluorophor etc. in the potting resin.For example, can in potting resin, mix and disperse to launch the fluorophor of blue light, be combined to form the LED light-emitting device of launching white light with the led chip of launching blue light.
According to the invention of the third aspect, therefore the heat that can disperse led chip to send from both of two lead-in wires can dispel the heat expeditiously.And, dispose led chip at two lead-in wires, therefore can shorten conductor length, and can suppress wire be subject to potting resin thermal expansion etc. impact and broken.And, compare with led chip being configured in a situation on the lead-in wire, can enlarge the interval between the led chip, thus the heat that can disperse expeditiously led chip to send.
The 4th invention is in the LED light-emitting device of the 3rd invention record, and the Area Ratio of two lead-in wires is ratios of the led chip quantity of mounted thereto of difference.
For example, at lead-in wire m led chip is installed, when n led chip of another lead-in wire installation, lead-in wire is m with the ratio of the area of another lead-in wire: n.The difference of m and n is less, and radiating effect is higher, and heat distributes also even, and therefore preferred m and n's is little.Especially, preferred m=n that is to say, the quantity that is installed in the led chip on each lead-in wire equates.
Such as the 4th invention, adjust the ratio of the area of two lead-in wires according to the quantity of the led chip of installing, thereby can dispel the heat expeditiously.Especially, such as the 3rd invention, on two lead-in wires, the led chip of equal number is installed respectively, and the area of two lead-in wires is equated, then can further dispel the heat expeditiously.
And, according to the 4th invention, can improve the reliability for the LED light-emitting device of distortion or perk.And, because equally spacedly configuration, so heat dispersing expeditiously further improves radiating effect.
The 5th invention is that led chip quantity is even number, and the led chip of equal number is installed respectively on two lead-in wires in the LED light-emitting device of the 4th invention record, and the area of two lead-in wires equates.
And, such as the 5th invention shape configuration led chip, then can shorten the conductor length that connects led chip and lead-in wire, can improve the reliability of LED light-emitting device.
The 6th invention is in the LED light-emitting device of record in the three～five invention, and on each lead-in wire, a plurality of led chips are configured to linearity equally spacedly.
The 7th invention is in the LED light-emitting device of record in the 6th invention, on two relative directions of lead-in wire, and the configuration of staggering of the led chip on the led chip on lead-in wire goes between with another, mutually not relative.
The 8th invention is in the LED light-emitting device of record in the three～seven invention, in the end of lead-in wire, has stair-stepping otch at the opposition side of led chip installation side.
The 9th invention is in the LED light-emitting device of record in the three～seven invention, and each lead-in wire has convexly curved protuberance at the led chip installation side.
And, according to the 8th, nine inventions, can suppress lead-in wire and break away from from packaging body.
Description of drawings
Fig. 1 is the formation schematic diagram of the light-emitting device of embodiment of the present invention, and Fig. 1 (I) is plane, and Fig. 1 (II) is the A-A line sectional view among Fig. 1 (I), and Fig. 1 (III) is B-B line sectional view.
Fig. 2 is the stereogram of identical light-emitting device.
Fig. 3 is the top stereogram that led chip encapsulation before is installed.
Fig. 4 is the following stereogram that led chip encapsulation before is installed.
Fig. 5 is the figure that observes the LED light-emitting device of embodiment two from oblique upper.
Fig. 6 is the figure that observes from different directions the LED light-emitting device of embodiment two.
Fig. 7 is the A-A line sectional view of the Fig. 5 among the embodiment two.
Fig. 8 is the structural representation of other lead-in wires.
Fig. 9 is the figure that observes the LED light-emitting device of embodiment three from oblique upper.
Figure 10 is the sectional view of the LED light-emitting device of embodiment three.
Figure 11 is the A-A line sectional view of Fig. 9 of embodiment three.
Figure 12 is the top stereogram that existing light-emitting device is shown.
Figure 13 is the following stereogram that existing light-emitting device is shown.
The specific embodiment
Embodiment one
Then, more describe the present invention in detail based on embodiment.
Fig. 1 shows the light-emitting device 1 of embodiment, (I) is plane, (II) is A-A line sectional view, (III) is B-B line sectional view.
This light-emitting device 1 comprises led chip 3 and encapsulation 10.
Adopt the light emitting diode of GaN series in the led chip 3.The light emitting diode of GaN series is formed with n electrode and p electrode in the one side of chip, therefore, shown in Fig. 1 (1), has set up two root beads and has met wire W1, W2.
In addition, in the example of Fig. 1, the center of led chip 3 is not in full accord with the center of light-emitting area.But, if both centers are roughly consistent, then in the use procedure of light-emitting device, do not have any problem.
The first lead-in wire 11 at its edge, namely with the second lead-in wire 21,22 relative thinner wall section 13 that partly form.Matrix part 14 reality of the upper surface of this thinner wall section 13 and the first lead-in wire are the same face, are exposed at the surface.Part or all mode that is located on this thinner wall section 13 is mounted with it for led chip 3.This is because thinner wall section 13 is occupied the central authorities of the light-emitting area of light-emitting device 1.That is, the first lead-in wire part or all of pasting area of mounting led chip 3 in 11 is positioned at the upper surface of thinner wall section 13.
In this example, in the first lead-in wire 11, do not form thinner wall section 13 at the two ends of matrix part 14.In other words, thinner wall section 13 is extended towards the second lead-in wire 21 sides from the middle body of the end relative with the second lead-in wire of the first lead-in wire 11.Why middle body optionally being extended, is for the material with the potting resin section 31 at both ends flow into, and guarantees the bond strength of the first lead-in wire the 11 and second lead-in wire.
Thinner wall section 13 is as long as its upper surface and matrix part 14 are the same face, and then there is no particular limitation to the shape of the rear side of thinner wall section 13.In example shown in Figure 1, the back side of thinner wall section 13 also is the plane, but the back side can be the inclined-plane.If form the inclined-plane that reduces gradually along with the thickness near matrix part 14 side thinner wall section 13, then the material of potting resin section 31 is weakened for the effect of thinner wall section 13, improves the bond strength of the first lead-in wire the 11 and second lead-in wire 21.From same insight, the back side of thinner wall section 13 can be formed concavo-convex.
As shown in Figure 4, expose in potting resin section 31 outsides at the back side of the first lead-in wire 11.
The heat of led chip 3 is delivered to the first lead-in wire 11, and is delivered to miscellaneous part from this back side, thereby heat is discharged from.
The first lead-in wire 11 be divided into two strands outwards outstanding from potting resin section 31.Become terminal 16,17 from potting resin section 31 outstanding parts.
Why terminal 16,17 being divided into two, is door 40 (with reference to the Fig. 4) when moulding potting resin section 31 is set between terminal 16,17.
In encapsulation 10, form the first lead-in wire the 11 and second lead-in wire 21,22 with thicker metallic plate, and its back side is exposed from potting resin section 31, thereby improve radiating effect.In other words, the volume that the plate of formation lead-in wire occupies light-emitting device 1 is larger, and potting resin section 31 becomes thin wall shape.Therefore, when ejection formation potting resin section 31, should be noted that the outflow of its material.So, in the light-emitting device 1 of present embodiment, the first lead-in wire terminals side of 11 is formed two strands, door 40 is set in the centre that is divided into two strands part.
In potting resin section 31, the part that is equivalent to the side face (reflecting surface 33) of light-emitting device 1 does not reach door 40 desired thickness is set, if door 40 is arranged on insulating regions 35, the material direct interference that then injects from door 40 respectively goes between 11,21,22, so it is unsatisfactory that door 40 is arranged on insulating regions 35.
Therefore, preferably in the first lead-in wire, in the central authorities that terminals side is divided into two strands part door 40 is set.Therefore, be formed with two terminals 16,17 on the first lead-in wire 11.Its result for the balanced perspective of the terminal arrangement in the light-emitting device 1, preferably forms two terminals too on the lead-in wire (the second lead-in wire 21,22) of opposite side.
The second lead-in wire 21,22 and the 11 relative configurations of the first lead-in wire.The upper surface of the second lead-in wire becomes welding region.
In this example, a led chip 3 is mounted on the first lead-in wire 11, therefore, welding lead W2 is drawn out to the part that is positioned at upside in Fig. 1 (I) as the second lead-in wire 21.Certainly, when other led chips were mounted on the first lead-in wire 11, the welding lead of pulling out from these other led chips was drawn out to the second lead-in wire 22 that is positioned at downside Fig. 1 (I).The second lead-in wire 21,22 up and down is that cross central line is symmetrical among relative Fig. 1 (I).
When only mounting a led chip on the first lead-in wire 11, the second lead-in wire 22 of downside can not play the function of electric circuit.But the terminal 16,17 of the first lead-in wire 11 is divided into two strands, and therefore the viewpoint of the terminal from bascule even become false terminal, preferably arranges the second lead-in wire 22.
Certainly, can draw wire towards the second lead-in wire 22 of downside from a led chip 3 that is mounted on the first lead-in wire 11. Symbol 23,24 expression terminals among the figure.
In the second lead-in wire 21,22, also preferably form thinner wall section 25 with the first 11 relative parts that go between, and make potting resin flow into its rear side.Thus, fully guarantee the bond strength that the first lead-in wire 11 and second goes between between 21,22.
The same with the thinner wall section 13 of the first lead-in wire 11, the back side of this thinner wall section 25 also can be formed the inclined-plane.If with along with the mode that reduces gradually near terminal 23, the thickness of 24 side thinner wall section 25 forms the inclined-plane, then the material of potting resin section 31 is weakened to the effect of thinner wall section 25, improves go between 21 bond strength of the first lead-in wire 11 and second.For same viewpoint, also the back side of thinner wall section 25 can be formed concaveconvex shape.
In this example, the upper surface of the thinner wall section 25 of the second lead-in wire 21 is welding region.
The heat of led chip 3 mainly be delivered to the first lead-in wire 11, it is fewer to be delivered to the second lead-in wire heat of 21 by wire W2.Thereby, preferred, in the second lead-in wire 21, make the wider width of thinner wall section 25, and flow into more potting resin 31, thereby realize the stability of the bond strength of the first lead-in wire the 11 and second lead-in wire 21.
Therefore, if compare the thinner wall section 13 of the first lead-in wire 11 and the thinner wall section 25 of the second lead-in wire 21, then preferably make the latter's width wider.And, in order to ensure ejecting expeditiously from led chip 3 heats, in the first lead-in wire 11, pasting area not only arrives on the thinner wall section 13 of width relative narrower, can also arrive matrix part 14, so that the led chip 3 that mounts also is located on the matrix part 14 of the first lead-in wire 11.Thereby, from shortening to the distance as the back side of the first lead-in wire 11 of main radiating surface as the led chip 3 of thermal source, guarantee efficient heat extraction.
Potting resin section 31 is around the first lead-in wire the 11, second lead-in wire 21,22.The part that is positioned in potting resin section 31 above the light-emitting device has reflecting surface 33 (inclined plane).
In the potting resin section 31, the part between the first lead-in wire the 11 and second lead-in wire 21 and 22 becomes insulating regions 35.
As potting resin section 31, can use the normally used macromolecular materials such as epoxy resin, silicones or nylon resin.The moulding by inserting the first lead-in wire the 11, second lead-in wire 21,22.
According to the light-emitting device 1 of the embodiment with said structure, led chip 3 is mounted on the thinner wall section 13 of the first lead-in wire 11 of the substantial middle that is positioned at light-emitting area, thereby can guarantee well the luminous balance of light-emitting area.
And the heat of led chip 3 is directly delivered to matrix part 14 from thinner wall section 13, therefore can keep good thermal discharge efficiency.
Embodiment two
Fig. 5 is the figure that observes the light-emitting device of embodiment two from oblique upper.The LED light-emitting device is made of led chip 112a, 112b and the potting resin 113 of two go between 110a, 110b, packaging body 111, face up type of side of the positive electrode and negative side.
Led chip 112a, 112b fix by bonding agent and are mounted on respectively on two lead-in wires 110a, the 110b in the recess 114.The electrode of led chip 112a (not shown) is connected on lead-in wire 110a, the 110b by welding lead 115a1,115a2, and the electrode of led chip 112b (not shown) is connected on lead-in wire 110a, the 110b by welding lead 115b1,115b2.
Led chip 112a, 112b can launch the light of random color, also can be the emission visible light such as blue, green, red or infrared ray, ultraviolet led chip.Potting resin 113 is silicones, can be mixed with dispersion or fluorophor etc.For example, can launch white light with the potting resin 113 that mixes and be dispersed with yellow fluorophor by led chip 112a, the 112b of emission blue light.
Fig. 6 (a) is packaging body 111 and figure lead-in wire 110a, 110b, that (light-emitting area side) observes from the top that only illustrates in the LED light-emitting device.Fig. 6 (b) is the A-A line sectional view among Fig. 6 (a), and Fig. 6 (c) is the B-B line sectional view among Fig. 6 (a), and Fig. 6 (d) is the figure from beneath.Shown in Fig. 6 (b), (c), the face with led chip 112a, 112b installation side opposition side of lead-in wire 110a, 110b exposes from packaging body 111.And shown in Fig. 6 (a), (b), lead-in wire 110a is identical with the area of lead-in wire 110b.
And, in the end of lead-in wire 110a, 110b, being provided with stair-stepping otch 117 with the face of led chip 112a, 112b installation side opposition side, this otch 117 is used as the resin material landfill of the part of packaging body 111.The LED light-emitting device of embodiment two exposes the back side of go between 110a, 110b, thus the danger that exists lead-in wire 110a, 110b to break away from from packaging body 111.Therefore, such otch 117 is set, is used for suppressing lead-in wire 110a, 110b and breaks away from from packaging body 111.
Fig. 7 is the A-A line sectional view among Fig. 5.At this as shown in Figure 7, led chip 112a, 112b are mounted into it part or all are located on the thinner wall section 118 of the lead-in wire 110a, the 110b that are formed with otch 117.That is, lead-in wire part or all of pasting area that mount led chip 112a, 112b among 110a, the 110b is positioned at the upper surface of thinner wall section 118.
In addition, can also protuberance be set by crooked part lead-in wire and prevent that lead-in wire breaks away from from packaging body 111.The LED light-emitting device that for example, lead-in wire 150a, 150b shown in Figure 8 can be used for embodiment two.Shown in the sectional view of Fig. 8 (a), lead-in wire 150a, 150b have respectively convexly curved semicircular protuberance 159a in the open side of recess 114, and the inside of two protuberance 159a is used as the resin material landfill of the part of packaging body 111.Shown in Fig. 8 (b), two protuberance 159a overlook and are rectangle under the state, and namely protuberance 159a is the semicircular cylinder shape.Preferably protuberance 159a is located on the outer fix than the more close recess 114 of led chip 112a, 112b.Because wish that improving light by protuberance 159a reverberation takes out efficient.And, shown in Fig. 8 (c), can also be the protuberance 159d that overlooks the structure of ring-type under the state.
In addition, can also be used for the LED light-emitting device with having the two lead-in wire of otch 117 and protuberance 159.Like this, can further suppress lead-in wire breaks away from from packaging body 111.
In the LED of this embodiment two light-emitting device, two lead-in wire 110a, the 110bs identical at area are separately installed with led chip 112a, 112b, therefore, can disperse from the both sides' of lead-in wire 110a, 110b the back side heat from led chip 112a, 112b, compare with the situation of only at lead-in wire 110a, a 10b led chip being installed, can dispel the heat more efficiently.
Embodiment three
Fig. 9 is the figure that observes the LED light-emitting device of embodiment three from oblique upper.The LED light-emitting device of embodiment three is square overlooking under the state, is made of led chip 132 and the potting resin 133 of two lead-in wires 130a, 130b of side of the positive electrode and negative side, packaging body 131, six face up type.
In the inside of recess 134, be separately installed with three led chips 132 at two lead-in wires 130a, 130b.Each led chip 132 is connected on lead-in wire 130a, the 130b by welding lead 135a, 135b.
Be installed in three the led chip 132as of lead-in wire on the 130a and near the limit 130aa of lead-in wire 130a, be configured to equally spacedly linearity along limit 130aa.And, be installed in three the led chip 132bs of lead-in wire on the 130b also in the same manner, near the limit 130ba of lead-in wire 130b, be configured to equally spacedly linearity along limit 130ba.
As mentioned above, by led chip 132a, 132b are disposed equally spacedly, the heat of led chip 132 can be disperseed expeditiously, radiating efficiency can be improved.And, led chip 132a, 132b are configured to linearity, therefore suppress to distort or perk etc. causes welding lead 135a, 135b to be cut off because of heat, can improve the reliability of LED light-emitting device.
In addition, led chip 132a and the led chip 132b configuration of staggering is not so that mutually relative on perpendicular to the direction of limit 130aa, 130ba.Thereby, can shorten the welding lead 135b that connects led chip 132a and the 130b that is connected and connect led chip 132b and the conductor length of the welding lead 135a of lead-in wire 130a, can suppress to distort or perk etc. causes welding lead 135a135b to be cut off because of heat, can improve the reliability of LED light-emitting device.
Figure 10 is at the sectional view perpendicular to the packaging body 131 on the direction of limit 130aa, 130ba and lead-in wire 130a, 130b.Go between and 130a, 130b expose from packaging body 131 with face LED132 installation side opposition side (back side).And lead-in wire 110a is identical with the area of lead-in wire 110b.And the back side of the end of lead-in wire 130a, 130b is provided with stair-stepping otch 157, and this otch 157 is used as the resin material landfill of the part of packaging body 131.By such otch 117 is set, suppresses lead-in wire 130a, 130b and break away from from packaging body 131.
Figure 11 is along the sectional view that passes through the line A-A on led chip 132a, the 132b among Fig. 9.At this as shown in figure 11, led chip 132a, 132b mount into it part or all are located on the thinner wall section 158 of the lead-in wire 130a, the 130b that are formed with otch 157.That is, part or all of the pasting area that be pasted with led chip 132a, 132b of lead-in wire among 130a, the 130b is positioned at the upper surface of thinner wall section 158.
Identical with the LED light-emitting device of embodiment two, the area of two lead-in wires 130a, 130b in the LED light-emitting device of this embodiment three is identical, on lead-in wire 130a, 130b, dispose respectively three led chips 132, and the back side of exposing go between 130a, 130b, the heat that therefore can disperse expeditiously led chip 132 to send.
In addition, in embodiment two and three, the led chip with even number is configured on two lead-in wires with equal number respectively respectively, and the area of two lead-in wires is identical, but not necessarily to dispose the led chip of even number, also there is no need the led chip at each lead-in wire configuration equal number.At two lead-in wires at least one led chip being installed gets final product.But the ratio that preferably area of lead-in wire is set as the area of lead-in wire is the ratio of the led chip quantity of installing, and it is poor less to be preferably mounted at the quantity of the led chip on each lead-in wire.This is because so then can improve radiating efficiency.
The present invention is not limited to the explanation of above-described embodiment.Various distortion in the scope that those skilled in the art expect in the situation that does not break away from the scope of putting down in writing in claims easily all belong to the present invention.
Claims (7)
1. lighting device is characterized in that comprising:
The first lead-in wire, its surface has be used to the pasting area that mounts led chip, and its back side is exposed;
The second lead-in wire, its surface have for the welding region of welding from the wire of described led chip, and its back side is exposed; And
Potting resin section, it goes between around described the first lead-in wire and described second, and forms insulating regions between described the first lead-in wire and described the second lead-in wire,
Wherein, the part relative with described the second lead-in wire of described the first lead-in wire forms thinner wall section, and the thinner wall section of described the first lead-in wire is positioned at the central authorities of light-emitting area, and described led chip is mounted on the face side of this thinner wall section, the resin material of described potting resin section flow into the rear side of this thinner wall section
In described the first lead-in wire, do not form thinner wall section at the two ends of matrix part,
Be divided between two strands the part in the terminals side of described the first lead-in wire door is set.
2. LED light-emitting device is characterized in that comprising:
Packaging body, it has recess, and is formed by resin;
Two lead-in wires, it is positioned at the bottom surface of described recess;
Led chip disposes respectively a described led chip at least on two described lead-in wires; And
Potting resin, the described recess of its landfill, and seal described led chip,
Wherein, two described lead-in wires expose the face of the opposition side opposite with described led chip installation side,
Face at the opposition side opposite with described led chip installation side has step-like otch,
The mode that is mounted on at least a portion of described led chip on the thinner wall section of the described lead-in wire that has formed described otch mounts described led chip,
Described led chip is mounted on thinner wall section and the matrix part,
Be divided in one terminals side of two described lead-in wires between two strands the part door is set.
3. LED light-emitting device according to claim 2 is characterized in that,
The area of two described lead-in wires, the ratio that is its area are the area of ratio of the quantity of the described led chip installed.
4. LED light-emitting device according to claim 3 is characterized in that,
Described led chip is even number,
Be separately installed with the led chip of equal number at two described lead-in wires,
The area of two described lead-in wires is identical.
5. each described LED light-emitting device in 4 according to claim 2 is characterized in that,
On each described lead-in wire, a plurality of described led chips are configured to linearity equally spacedly.
6. LED light-emitting device according to claim 5 is characterized in that,
On the relative direction of two described lead-in wires, the described led chip of configuration that staggers is so that the described led chip on described lead-in wire is mutually not relative with described led chip on another described lead-in wire.
7. each described LED light-emitting device in 4 according to claim 2 is characterized in that,
Each described lead-in wire has convexly curved protuberance at described led chip installation side.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009225359A JP5471244B2 (en) | 2009-09-29 | 2009-09-29 | Lighting device |
| JP2009-225359 | 2009-09-29 | ||
| JP2009293232A JP5446843B2 (en) | 2009-12-24 | 2009-12-24 | LED light emitting device |
| JP2009-293232 | 2009-12-24 |
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| Publication Number | Publication Date |
|---|---|
| CN102032485A CN102032485A (en) | 2011-04-27 |
| CN102032485B true CN102032485B (en) | 2013-10-30 |
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| CN105042527A (en) * | 2015-08-13 | 2015-11-11 | 深圳市骏森光电子有限公司 | Infrared LED lamp bead for security and protection and infrared lamp panel for security and protection |
| KR102701803B1 (en) * | 2018-06-11 | 2024-09-03 | 서울반도체 주식회사 | Light emitting diode package |
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| CN101217142A (en) * | 2007-12-27 | 2008-07-09 | 佛山市国星光电股份有限公司 | A bar-shaped LED light source |
| CN100470852C (en) * | 2003-02-18 | 2009-03-18 | 夏普株式会社 | Semiconductor light-emitting device, manufacturing method thereof, and electronic image pickup device |
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| JP4486451B2 (en) * | 2004-09-07 | 2010-06-23 | スタンレー電気株式会社 | LIGHT EMITTING DEVICE, LEAD FRAME USED FOR THE LIGHT EMITTING DEVICE, AND LEAD FRAME MANUFACTURING METHOD |
| JP2006165097A (en) * | 2004-12-03 | 2006-06-22 | Harison Toshiba Lighting Corp | Envelope for light-emitting element |
| US20070063213A1 (en) * | 2005-09-21 | 2007-03-22 | Lighthouse Technology Co., Ltd. | LED package |
| KR100735325B1 (en) * | 2006-04-17 | 2007-07-04 | 삼성전기주식회사 | Light emitting diode package and fabrication method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100470852C (en) * | 2003-02-18 | 2009-03-18 | 夏普株式会社 | Semiconductor light-emitting device, manufacturing method thereof, and electronic image pickup device |
| CN101217142A (en) * | 2007-12-27 | 2008-07-09 | 佛山市国星光电股份有限公司 | A bar-shaped LED light source |
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