CN102030537A - Process for sintering ceramic capacitor dielectric - Google Patents
Process for sintering ceramic capacitor dielectric Download PDFInfo
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- CN102030537A CN102030537A CN2009101771621A CN200910177162A CN102030537A CN 102030537 A CN102030537 A CN 102030537A CN 2009101771621 A CN2009101771621 A CN 2009101771621A CN 200910177162 A CN200910177162 A CN 200910177162A CN 102030537 A CN102030537 A CN 102030537A
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Abstract
The invention relates to a process for sintering ceramic capacitor dielectric, comprising the following steps of: uniformly mixing ceramic powder and a proper amount of adhesive, and pressing into a wafer with a certain diameter and thickness, putting the wafer blank into a diamond spar segger, and pushing into a high-temperature microwave furnace to sinter, wherein the high-temperature microwave furnace is a tunnel kiln, and the tunnel kiln is divided into a plurality of temperature control areas; and sintering the ceramic capacitor dielectric at high-temperature by applying micro-wave irradiation and the micro-wave absorbing property of sintered materials. The micro-wave energy can be directly acted on the ceramic dielectric material; the polarity molecules in the dielectric are changed to be arrayed and oriented according to the polarity of an electromagnetic field from an original random distribution state, and constantly change according to the frequency of an alternate electric magnetic field to cause molecular movement and mutual friction to result in heat generation. The field energy of the alternate electric field is converted into the heat energy inside the dielectric so that the temperature of the dielectric medium constantly rises to realize ceramic sintering. Compared with the traditional electric heating kiln, in the process, the sintering period of the same material can be reduced to 6-8 hours, and the energy is saved by above 35%.
Description
Technical field
The present invention relates to the manufacturing process technology field of ceramic capacitor dielectric, specifically, relate to a kind of technology of applied microwave energy high temperature sintering ceramic capacitor dielectric.
Background technology
Now, the sintering processing of ceramic capacitor dielectric is that moulding porcelain (green) to be sintered is put into by the stove hall of resistance wire or carbon-point (pyrotoxin) heat temperature raising, and by thermal radiation and conduction heating roasting, the material temperature that is sintered in the process from outward appearance to inner essence.This is a kind of indirect heating mode, and process is slow.Common about 24 hours of product sintering (tunnel kiln) cycle.The sintered ceramic condenser dielectric is consuming time longer, and consumes energy is more.
At present, micro-wave energy comprises that in lesser temps (being lower than 400 ℃) field household application is comparatively general and ripe.As using microwave cook food, dry mechanicals, disinfection etc.But also not with the high temperature sintering of microwave application, especially in large batch of field of industrialized production in ceramic capacitor dielectric.
Summary of the invention
Problem at prior art exists the objective of the invention is to disclose a kind of technology that can save the ceramic capacitor dielectric of the sintering time and the sintering energy greatly.
For achieving the above object, the microwave sintering process of ceramic capacitor dielectric disclosed by the invention, ceramic powder uniform mixing suitable amount of adhesive, be pressed into the disk of certain diameter, thickness, the raw cook moulding is put into the diamond spar saggar with raw cook, pushes to carry out full-automatic sintering in the high temperature microwave kiln.
Described high temperature microwave oven is a tunnel kiln, tunnel kiln is provided with a plurality of temperature-controlled areas, and its technology specifically comprises following flow process: (1) automatically pushes the moulding raw cook diamond spar saggar of packing in the high temperature microwave tunnel kiln, push away the alms bowl adjustable-speed, 10～25 minutes/alms bowl of span of control; (2) the diamond spar saggar enters the cold zone of microwave tunnel kiln, in 150 ℃～400 ℃ temperature ranges, and hold-time 1-2 hour; (3) enter the high-temperature zone, according to 1200～1400 ℃ of the adjustable Heating temperature scopes of the firing temperature of stupalith and hold-time 2-3 hour; (4) enter the cooling zone, the ceramic capacitor dielectric naturally cooling, the recirculated water cooling that burn till, about 1-2 of time hour.Ceramic capacitor dielectric tapping temperature≤40 ℃.
Beneficial effect of the present invention is: by the mode high temperature sintering ceramic capacitor dielectric material of this applied microwave energy, micro-wave energy (electromagnetic field) directly acts on ceramic medium material, medium Semi-polarity molecule is from the polarity oriented of original stochastic distribution state shift according to electromagnetic field, and constantly change by the frequency of alternating electromagnetic field, cause molecular motion with mutual friction mutually and produce heat.This moment, the field energy (micro-wave energy) of alternating electric field was converted into the interior heat energy of medium, and medium temperature is constantly raise, and realized ceramic post sintering.Compare with traditional electrically heated kiln, the sintering period of identical porcelain (tunnel kiln) can foreshorten to 6～8 hours, and save energy is more than 35%.
Embodiment
The present invention is further detailed explanation below in conjunction with embodiment.
The technology of a kind of sintered ceramic condenser dielectric of the technology of a kind of sintered ceramic condenser dielectric disclosed by the invention, ceramic powder uniform mixing suitable amount of adhesive is pressed into the disk (raw cook moulding) of certain diameter, thickness.The raw cook of moulding is put into the diamond spar saggar, push in the high temperature microwave kiln stove and carry out sintering.
Specifically, described high temperature microwave oven is a tunnel kiln, and tunnel kiln is provided with a plurality of temperature-controlled areas, and its technology specifically comprises following flow process:
(1) the moulding raw cook is packed into diamond spar saggar automatically pushes in the high temperature microwave tunnel kiln, pushes away the alms bowl adjustable-speed, 10～25 minutes/alms bowl of span of control.
(2) the diamond spar saggar enters the cold zone of microwave tunnel kiln, and raw cook absorbs micro-wave energy, is converted into heat energy, and temperature raises gradually.In 150 ℃～400 ℃ temperature ranges, hold-time 1-2 hour.
(3) enter the high-temperature zone, according to 1200～1400 ℃ of the adjustable Heating temperature scopes of the firing temperature of stupalith, hold-time 2-3 hour.
(4) enter the cooling zone, the ceramic capacitor dielectric naturally cooling, the recirculated water cooling that burn till, about 1-2 of time hour.Ceramic capacitor dielectric tapping temperature≤40 ℃.
The principle of work of microwave sintering ceramic capacitor dielectric is as follows: micro-wave energy (electromagnetic field) directly acts on ceramic medium material, medium Semi-polarity molecule is from the polarity oriented of original stochastic distribution state shift according to electromagnetic field, and constantly change by the frequency of alternating electromagnetic field, cause molecular motion with mutual friction mutually and produce heat.This moment, the field energy (micro-wave energy) of alternating electric field was converted into the interior heat energy of medium, and medium temperature is constantly raise, and realized ceramic post sintering.
By a large amount of evidences, use conventional tunnel stove sintered ceramic condenser dielectric chip, material power consumption 5.28 kilowatt-hours of average every kilogram of ceramic capacitor dielectric chip, and adopt microwave sintering ceramic capacitor dielectric of the present invention, material power consumption 3.00 kilowatt-hours of average every kilogram of ceramic capacitor dielectric chip, its saves energy reaches 43.2%.Certainly, the quality of diamond spar saggar own also can consume the part micro-wave energy, causes certain waste of energy, suitably reduces the quality of diamond spar saggar own, also can improve energy utilization rate.In addition, common about 24 hours of product sintering (tunnel kiln) cycle.Adopt microwave sintering ceramic capacitor dielectric of the present invention, only need 6-8 hour, can enhance productivity more than 3 times.
Claims (2)
1. the technology of a sintered ceramic condenser dielectric, ceramic powder uniform mixing suitable amount of adhesive, be pressed into the disk (raw cook moulding) of certain diameter, thickness, it is characterized in that: the raw cook of moulding is put into the diamond spar saggar, push in the high temperature microwave kiln stove and carry out sintering.
2. the technology of microwave sintering ceramic capacitor dielectric according to claim 1 is characterized in that: described high temperature microwave oven is a tunnel kiln, and tunnel kiln is provided with a plurality of temperature-controlled areas, and its technology specifically comprises following flow process:
(1) the moulding raw cook is packed into diamond spar saggar automatically pushes in the high temperature microwave tunnel kiln, pushes away the alms bowl adjustable-speed, 10～25 minutes/alms bowl of span of control;
(2) the diamond spar saggar enters the cold zone of microwave tunnel kiln, and raw cook absorbs micro-wave energy, is converted into heat energy, and temperature raises gradually.In 150 ℃～400 ℃ temperature ranges, hold-time 1-2 hour;
(3) enter the high-temperature zone, according to 1200～1400 ℃ of the adjustable Heating temperature scopes of the firing temperature of stupalith and hold-time 2-3 hour;
(4) enter the cooling zone, the ceramic capacitor dielectric naturally cooling, the recirculated water cooling that burn till, about 1-2 of time hour.Ceramic capacitor dielectric tapping temperature≤40 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101771621A CN102030537A (en) | 2009-09-28 | 2009-09-28 | Process for sintering ceramic capacitor dielectric |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009101771621A CN102030537A (en) | 2009-09-28 | 2009-09-28 | Process for sintering ceramic capacitor dielectric |
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| CN102030537A true CN102030537A (en) | 2011-04-27 |
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| CN2009101771621A Pending CN102030537A (en) | 2009-09-28 | 2009-09-28 | Process for sintering ceramic capacitor dielectric |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1065349A (en) * | 1991-03-27 | 1992-10-14 | 天津大学 | The manufacture method of high-voltage ceramic condenser medium |
| CN101154485A (en) * | 2006-09-30 | 2008-04-02 | 郜长福 | Microwave sintering method for thermal resistor with positive temperature coefficient and its special device |
| CN101285654A (en) * | 2008-05-13 | 2008-10-15 | 佘松林 | Microwave sintering apparatus and method |
| CN201259369Y (en) * | 2008-08-19 | 2009-06-17 | 贾培录 | Natural gas biscuit firing tunnel kiln |
-
2009
- 2009-09-28 CN CN2009101771621A patent/CN102030537A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1065349A (en) * | 1991-03-27 | 1992-10-14 | 天津大学 | The manufacture method of high-voltage ceramic condenser medium |
| CN101154485A (en) * | 2006-09-30 | 2008-04-02 | 郜长福 | Microwave sintering method for thermal resistor with positive temperature coefficient and its special device |
| CN101285654A (en) * | 2008-05-13 | 2008-10-15 | 佘松林 | Microwave sintering apparatus and method |
| CN201259369Y (en) * | 2008-08-19 | 2009-06-17 | 贾培录 | Natural gas biscuit firing tunnel kiln |
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Application publication date: 20110427 |