CN102019578B - Method for removing wafer from grinding head of chemical mechanical polishing equipment - Google Patents
Method for removing wafer from grinding head of chemical mechanical polishing equipment Download PDFInfo
- Publication number
- CN102019578B CN102019578B CN2009101962652A CN200910196265A CN102019578B CN 102019578 B CN102019578 B CN 102019578B CN 2009101962652 A CN2009101962652 A CN 2009101962652A CN 200910196265 A CN200910196265 A CN 200910196265A CN 102019578 B CN102019578 B CN 102019578B
- Authority
- CN
- China
- Prior art keywords
- wafer
- pressure
- grinding head
- head
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention discloses a method for removing a wafer from a grinding head of a piece of chemical mechanical polishing equipment. The chemical mechanical polishing equipment comprises the grinding head and a grinding head load/unload platform, with the wafer which is to be removed from the grinding head absorbed on the lower surface of the grinding head. The method comprises applying a first pressure from the grinding head to the central area of the wafer which is to be removed in a direction perpendicular to the surface of the wafer, leveling the pressure of the grinding head, and again applying a second pressure to the central area of the wafer which is to be removed in the direction perpendicular to the surface of the wafer. According to the method provided in the present invention, the probability of wafer breaking due to excessive pressure from the grinding head is reduced, thereby raising the good product rate of the production technology.
Description
Technical field
The present invention relates to semiconductor fabrication process, particularly be used for wafer is shifted out the method for chemical-mechanical polisher grinding head.
Background technology
Along with the development of integrated circuit fabrication process, increase day by day for the requirement of the integration density of semiconductor devices.Along with eighties of last century is incorporated into the multiple-layer metallization technology in the integrated circuit fabrication process seventies, makes that the vertical space of semiconductor wafer is effectively utilized, and significantly improved the integrated level of device.But the new problem that multiple-layer metallization causes is to make the irregularity degree aggravation of silicon chip surface; The out-of-flatness meeting of silicon chip surface causes for example problem such as photoresist uneven thickness in follow-up lithography step; And then cause photoetching limited, had a strong impact on the development of dimensions of semiconductor devices to miniaturization.To this problem, need carry out planarization to the semiconductor wafer surface after the metallization, developed multiple planarization at present, mainly comprise anti-carve, glass backflow, spin coating rete, chemically mechanical polishing (CMP) etc.
In present integrated circuit fabrication process, the CMP technology is the most frequently used a kind of planarization.CMP technology is used has abrasiveness and corrosive lapping liquid, and is used polishing pad and support ring.The size of polishing pad is bigger than silicon chip usually.Polishing pad and silicon chip are forced together by a mobilizable rubbing head, and the support ring of plastics then is used to keep the position of silicon chip.Silicon chip rotates (normally changeing with identical direction) simultaneously with polishing pad, but their center does not overlap.The material of silicon chip surface and irregular structure all are removed in this process, thereby reach the purpose of planarization.Silicon chip surface after the complanation makes the moulding of the pattern in the dry etching be more prone to.Level and smooth silicon chip surface also makes and uses littler metal patterns to become possibility, thereby can improve integrated level.
Figure 1A shows the operation principle of traditional chemical-mechanical polisher.The wafer 100 that will polish places on the workbench 101, fixes wafer 100 through grinding head 102.Workbench 101 is provided with grinding pad 103, and grinding fluid conveying device 104 is transported to lapping liquid 105 on the grinding pad 103, thereby accomplishes process of lapping through the rotation of workbench 101 and grinding head 102.
Figure 1B further shows the partial enlarged view of traditional CMP device.CMP device 110 comprises pedestal 111, is positioned at three grinding plate 132a, 132b and 132c on the pedestal 111, and cleaning head is written into (Head Clean Load/Unload is called for short HCLU) platform 200.HCLU platform 200 comprises and is written into cup 201, is used for wafer is loaded on the grinding pad and grinds, and after grinding, wafer is carried out.Grinding plate 132a, 132b and 132c can work simultaneously, thereby handle the polishing of a plurality of wafers simultaneously at short notice, to improve the polishing efficiency of CMP.Grinding pad adjuster 112a, 112b and 112c are arranged on the pedestal 111, thereby it can regulate grinding pad by inswept grinding pad 132a, 132b and 132c separately.On pedestal 111, also be provided with three slurry feeder 122a, 122b and 122c, be used to its grinding pad separately ground slurry is provided.
Fig. 2 shows HCLU platform 200 and is being written into/operation principle when carrying wafer.As shown in the figure, when being written into wafer 300, at first wafer 300 is sent on the pedestal 202 that is written into cup 201 in the HCLU platform 200, and to the upper surface 300a of wafer water spray.The reciprocating motion of the cylinder (not shown) through pillar 203 belows (along the direction of arrow shown in the figure) will be written into cup 201 and rise, and keep between the locating ring 401 thereby wafer 300 placed.Rely on the surface tension effects of water to fit together between the membrane structure of the upper surface 300a of wafer 300 and the lower surface 403 of head 402.When after wafer 300 is accomplished CMP, deviating from, on head 402, apply certain pressure, make that the tension force between the membrane structure of wafer 300 and lower surface reduces and produces to become flexible, thereby wafer 300 is shed to be written on glasss 201.And then the reciprocating motion of the cylinder through pillar 203 belows, will be written into cup and roll back in the HCLU platform 200 for 201 times, again wafer 300 is shifted out.
Fig. 3 shows in detail wafer 300 402 stressing conditions when deviating from from the head under the situation that head 402 is exerted pressure.As shown in Figure 3, through on head 402, applying, make the central area C of wafer 300 receive a downward pressure along the pressure f shown in the direction of arrow among the figure, fringe region A then receive one with the opposite power of power of central area C.Zone line B between central area C and the fringe region A does not receive power usually.Under the effect of this group power, the tension force between the lower surface of wafer 300 and head 402 reduces and produces to become flexible, thereby wafer 300 is shed on the pedestal 202.
In existing field, the power f that on head 402, applies be generally one have a fixed size power, 1.5psi (1psi equals 6894.75 Pascals) for example, thus and apply this pressure once wafer released.Yet the power that applies fixed size once can produce such problem, promptly crosses thin or hardness when not enough when the wafer of need releasing, and this pressure can produce very big impact to the central area of wafer, thereby possibly cause the risk of wafer fracture.
Therefore, need improve the method that wafer carries out, excessive pressure ruptures owing to head applies thereby avoid wafer, thereby improves the yields of production technology.
Summary of the invention
In the summary of the invention part, introduced the notion of a series of reduced forms, this will further explain in specific embodiment part.Summary of the invention part of the present invention does not also mean that key feature and the essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain of attempting to confirm technical scheme required for protection.
The wafer phenomenon that excessive pressure ruptures owing to head applies takes place when in order to solve in the prior art wafer being carried from HCLU; The invention provides a kind of method that is used for wafer is shifted out the chemical-mechanical polisher grinding head; Said chemical-mechanical polisher comprises grinding head and grinding head and is written into and platform; The chip sucking that will be moved out of said grinding head is attached on the lower surface of said grinding head; Said method comprises: a. applies first pressure by the said grinding head edge direction vertical with the wafer surface that will be moved out of to the central area of wafer; B. with the pressure leveling of said grinding head; C. the edge direction vertical with the wafer surface that will be moved out of once more applies second pressure to the central area of wafer.
According to a further aspect in the invention, the size of said first pressure is between 0.4～0.8psi, and the size of said second pressure is between 0.9～1.3psi.Said first pressure is less than said second pressure.
According to the method for the invention, excessive pressure ruptures owing to head applies can to avoid wafer, thereby improves the yields of production technology.
Description of drawings
Attached drawings of the present invention is used to understand the present invention at this as a part of the present invention.Embodiments of the invention and description thereof have been shown in the accompanying drawing, have been used for explaining principle of the present invention.In the accompanying drawings,
Figure 1A-1B shows traditional chemical-mechanical polisher.Wherein Figure 1A shows the operation principle of traditional chemical-mechanical polisher; Figure 1B shows the partial enlarged view of traditional CMP equipment;
Fig. 2 shows the HCLU platform and is being written into/operation principle when carrying wafer;
Fig. 3 shows the stressing conditions of wafer when the head of HCLU is deviate from;
Fig. 4 shows application of force method according to the present invention with the stressing conditions of wafer when the head of HCLU is deviate from.
The specific embodiment
In the description hereinafter, a large amount of concrete details have been provided so that more thorough understanding of the invention is provided.Yet, it will be apparent to one skilled in the art that the present invention can need not one or more these details and be able to enforcement.In other example,, describe for technical characterictics more well known in the art for fear of obscuring with the present invention.
In order thoroughly to understand the present invention, will in following description, detailed steps be proposed, thereby so that explanation the present invention be how to improve the head applied pressure solve wafer in carrying process owing to the stressed excessive problem that ruptures of causing.Obviously, execution of the present invention is not limited to the specific details that the technical staff had the knack of of semiconductor applications.Preferred embodiment of the present invention is described in detail as follows, yet except these were described in detail, the present invention can also have other embodiments.
The problem that causes wafer in carrying process, possibly rupture for the head applied pressure that overcomes HCLU is excessive the present invention proposes a kind of new method of being exerted pressure by head.Because the disposable power that applies fixed size may produce excessive impact to wafer; According to the present invention; Taked head institute applied pressure progressively is applied to the method at the center of wafer, thereby reduced the impact of applied pressure, to reduce the risk of wafer fracture wafer.
Stressing conditions when Fig. 4 shows application of force method according to the present invention wafer is deviate from from the head.As shown in Figure 4, through on grinding head 402, applying one earlier along first pressure f shown in the direction of arrow among the figure
1, make the central area C of wafer 300 receive a less downward pressure, make produce between the lower surface of central area C and grinding head 402 of wafer 300 slight loosening.Specifically, promptly between the lower surface of the surface of wafer 300 and grinding head 402, produce the slit of some, thereby make air enter between this surface deface tension force.Then, with the pressure leveling of said grinding head.At last, on grinding head 402, apply second pressure f along direction as shown in the figure again
2, make that the central area C of wafer 300 is stressed once more on loosening basis, thereby successfully throw off with the lower surface of grinding head 402.
First pressure f
1With second pressure f
2All be set at less than the disposable power f that applies in the prior art, so wafer can not receive bigger compression shock in moment, reduce the risk of fracture.According to the present invention, first pressure f
1Can be set between about 0.4～0.8psi, and second pressure f
2Can be set between 0.9～1.3psi.Preferably, first pressure f
1Be 0.5psi, and second pressure f
2Be 1.0psi, first pressure f
1With second pressure f
2Sum is 1.5psi.More preferably, first pressure f
1Can be set at less than second pressure f
2
According to of the present invention the grinding head applied pressure is decomposed into the method that twice littler pressure is applied to center wafer, has reduced of the impact of excessive pressure, thereby reduced the risk of wafer fracture wafer.It will be understood by those skilled in the art that; The two step application of force methods here only are the examples of enumerating for the present invention is described; Also can the grinding head applied pressure be divided into plural step and progressively apply, the size of the power that each step applies becomes littler with respect to disposable applied pressure.It will be appreciated by persons skilled in the art that under the situation that the method for this progressively application of force is extremely thin at the wafer of deviating from and be easy to rupture it is very favourable.
The present invention is illustrated through the foregoing description, but should be understood that, the foregoing description just is used for for example and illustrative purposes, but not is intended to the present invention is limited in the described scope of embodiments.It will be appreciated by persons skilled in the art that in addition the present invention is not limited to the foregoing description, can also make more kinds of variants and modifications according to instruction of the present invention, these variants and modifications all drop in the present invention's scope required for protection.Protection scope of the present invention is defined by appended claims book and equivalent scope thereof.
Claims (5)
1. method that is used for wafer is shifted out the chemical-mechanical polisher grinding head; Said chemical-mechanical polisher comprises grinding head and grinding head and is written into and platform; The chip sucking that will be moved out of said grinding head is attached on the lower surface of said grinding head, it is characterized in that, said method comprises:
A. by the said grinding head edge direction vertical, apply first pressure to the central area of wafer with the wafer surface that will be moved out of;
B. with the pressure leveling of said grinding head;
C. the edge direction vertical with the wafer surface that will be moved out of once more applies second pressure to the central area of wafer.
2. the method for claim 1, the size that it is characterized in that said first pressure is between 0.4～0.8psi.
3. the method for claim 1, the size that it is characterized in that said second pressure is between 0.9～1.3psi.
4. the method for claim 1 is characterized in that said first pressure and the second pressure sum are 1.5psi.
5. the method for claim 1 is characterized in that said first pressure is less than said second pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101962652A CN102019578B (en) | 2009-09-22 | 2009-09-22 | Method for removing wafer from grinding head of chemical mechanical polishing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101962652A CN102019578B (en) | 2009-09-22 | 2009-09-22 | Method for removing wafer from grinding head of chemical mechanical polishing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102019578A CN102019578A (en) | 2011-04-20 |
| CN102019578B true CN102019578B (en) | 2012-03-14 |
Family
ID=43861571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101962652A Active CN102019578B (en) | 2009-09-22 | 2009-09-22 | Method for removing wafer from grinding head of chemical mechanical polishing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102019578B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112692721B (en) * | 2020-12-23 | 2022-07-05 | 华虹半导体(无锡)有限公司 | Wafer positioning device and scratch tracking method for CMP (chemical mechanical polishing) process |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1182703A (en) * | 1996-10-03 | 1998-05-27 | Memc电子材料有限公司 | Equipment for transferring semiconductor chip |
| CN1290030A (en) * | 1999-09-28 | 2001-04-04 | 西门子公司 | Method for promoting releasement of semiconductor sheets |
-
2009
- 2009-09-22 CN CN2009101962652A patent/CN102019578B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1182703A (en) * | 1996-10-03 | 1998-05-27 | Memc电子材料有限公司 | Equipment for transferring semiconductor chip |
| CN1290030A (en) * | 1999-09-28 | 2001-04-04 | 西门子公司 | Method for promoting releasement of semiconductor sheets |
Non-Patent Citations (2)
| Title |
|---|
| JP特开2002-36096A 2002.02.05 |
| JP特开平9-171980A 1997.06.30 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102019578A (en) | 2011-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6039633A (en) | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies | |
| US6203413B1 (en) | Apparatus and methods for conditioning polishing pads in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies | |
| US9138861B2 (en) | CMP pad cleaning apparatus | |
| US5785585A (en) | Polish pad conditioner with radial compensation | |
| US6908366B2 (en) | Method of using a soft subpad for chemical mechanical polishing | |
| US20060079159A1 (en) | Chemical mechanical polish with multi-zone abrasive-containing matrix | |
| KR101139054B1 (en) | Method of the double sided polishing of a semiconductor wafer | |
| US20100285723A1 (en) | Polishing apparatus | |
| US9475170B2 (en) | Device for cleaning fixed abrasives polishing pad | |
| JPH10329007A (en) | Chemical machine polishing device | |
| ATE512758T1 (en) | RINSING AFTER A CHEMICAL-MECHANICAL PLANARIZATION PROCESS APPLIED TO A WAFER | |
| CN102019578B (en) | Method for removing wafer from grinding head of chemical mechanical polishing equipment | |
| CN103273414A (en) | Chemical-mechanical polishing device and method thereof | |
| KR100879761B1 (en) | Apparatus for chemical mechanical polishing and method of dressing using the same | |
| US10974366B2 (en) | Conditioning wheel for polishing pads | |
| JP2003124165A (en) | System and device for manufacturing of semiconductor device | |
| US7108591B1 (en) | Compliant wafer chuck | |
| US20030045220A1 (en) | Polishing head for pressurized delivery of slurry | |
| US7252736B1 (en) | Compliant grinding wheel | |
| JPH10256201A (en) | Manufacturing method of semiconductor | |
| US20070049184A1 (en) | Retaining ring structure for enhanced removal rate during fixed abrasive chemical mechanical polishing | |
| KR100652315B1 (en) | Polishing head of a chemical mechanical polisher | |
| CN103128648A (en) | Chemical machinery lapping device and method of processing crystal plates in lapping process | |
| US8403727B1 (en) | Pre-planarization system and method | |
| JP2004047801A (en) | Polishing process of semiconductor wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |