CN102017094B - Endpoint detection in chemical mechanical polishing using multiple spectra - Google Patents
Endpoint detection in chemical mechanical polishing using multiple spectra Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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Abstract
A computer implemented method includes obtaining at least one current spectrum with an in-situ optical monitoring system, comparing the current spectrum to a plurality of different reference spectra, and determining based on the comparing whether a polishing endpoint has been achieved for the substrate having the outermost layer undergoing polishing. The current spectrum is a spectrum of light reflected from a substrate having an outermost layer undergoing polishing and at least one underlying layer. The plurality of reference spectra represent spectra of light reflected from substrates with outermost layers having the same thickness and underlying layers having different thicknesses.
Description
Technical field
The present invention relates generally to the spectrum monitoring of substrate during chemico-mechanical polishing.
Background technology
Normally by at sequential aggradation conductor layer, semiconductor layer or insulating barrier on silicon wafer, on substrate, forming integrated circuit.Manufacturing step relates on nonplanar surface the deposition packing layer and makes described packing layer planarization.For some application, make the packing layer planarization, until the top surface of patterned layer exposes.For example, can be on patterned insulation layer the packing layer of depositing electrically conductive, to be filled in groove or the hole in insulating barrier.After planarization, the part that remains in the conductor layer between the pattern of rising of insulating barrier is formed on through hole, plug and the circuit that conductive path is provided between the thin film circuit on substrate.Other application for such as oxide cmp, make the packing layer planarization, until stay predetermined thickness on nonplanar surface.In addition, normally photoetching process is needed in the planarization of substrate surface.
Chemico-mechanical polishing (CMP) is a kind of flattening method of accepting.This flattening method need to be arranged on substrate on carrier head or rubbing head usually.The exposed surface of substrate is placed against rotation polishing disc-like pad or banded liner usually.Polishing pad can be standard liner or fixing polishing pad.Standard liner has durable rough surface, and fixedly polishing pad has and remains on the polishing particles that comprises in medium.This carrier head provides controlled load so that this substrate is pushed into to polishing pad on substrate.Usually to the surface of polishing pad, supply polishing liquid, such as the slurries with polishing particles.
A problem in CMP is to determine whether this polishing completes, and, whether substrate layer has been planarized to desired evenness or thickness that is, or determines when and removed the material that will measure.Excessive polishing (removing too much) conductor layer or film cause circuitous resistance to increase.On the other hand, directional polish (removing very little) conductor layer causes electric short circuit.Between variation, polishing pad and the substrate of the variation of the original depth of substrate layer, the variation of slurry content, polishing pad state on the variation of relative velocity and substrate the variation of load can cause the variation of material removal rate.These variations cause reaching the variation of needed time of polishing end point.Therefore, can not only according to polishing time, determine polishing end point.
Summary of the invention
One general aspect, a kind of computer-implemented method comprises: with optical monitoring system on the spot, obtain at least one current spectrum, more described current spectrum and a plurality of different reference spectra, and relatively come to determine for having the outermost substrate that stands polishing, whether to have arrived polishing end point based on this.This current spectrum is the spectrum by the light of substrate reflection, and this substrate has outermost layer and at least one the Sub that stands polishing.These a plurality of reference spectra represent that these substrates have the outermost layer the Sub different with thickness that thickness is identical by the spectrum of the light of substrate reflection.
Execution mode can comprise one or more following steps.Determine whether to arrive polishing end point and can comprise the difference of calculating between current spectrum and reference spectra.Determine whether to arrive polishing end point and can comprise whether at least one difference of determining in these differences has reached threshold value.At least one difference of this in these differences can be minimal difference.Determine whether to arrive polishing end point and can comprise activation endpoint detection algorithm when at least one difference in these differences has reached threshold value.Determine whether to arrive polishing end point and can comprise and produce the difference trace, this difference trace comprises a plurality of points, and each point is represented as the minimal difference in the difference that the rotation of pressing plate calculates.This endpoint detection algorithm can comprise determines whether this difference trace has reached minimum value.Determine whether described difference trace has reached minimum value and can comprise the slope that calculates this difference trace, or determine whether this difference trace has risen to the above threshold value of minimum value.This reference spectra can produce by rule of thumb or produce according to theory.
On the other hand, a kind of computer program that is coded on tangible program carrier can operate so that data processing equipment is carried out the operation of the step that comprises said method.
As used in this manual, the term substrate can comprise, for example, and product substrate (for example, this product substrate comprises a plurality of memories or processor mould), test base, exposed substrate and sluice foundation plate.Substrate can be in the stages that integrated circuit is manufactured, and for example, substrate can be exposed wafer, or this substrate can comprise one or more sedimentary deposits and/or patterned layer.The term substrate can comprise circular dish and rectangular plate.
The advantage that embodiment of the present invention may exist can comprise one or more following advantages.End-point detecting system may be more insensitive in the Sub or pattern, between substrate, changing, thereby can improve the reliability of endpoint system.By providing than common more level and smooth difference or the endpoint trace of the trace that uses single reference spectra technology to produce, the use of a plurality of reference spectra (as relative with single reference spectra) improves the accuracy of evaluation of end point.
One or more embodiments of the detail of the present invention are set forth in the accompanying drawings and the description below.Other features of the present invention, aspect and advantage will be become apparent by description, accompanying drawing and claims.
The accompanying drawing explanation
Fig. 1 illustrates substrate.
Fig. 2 illustrates chemical-mechanical polisher.
Fig. 3 is the top view of polishing pad and the position of taking field survey is shown.
Fig. 4 is the flow chart of determining polishing end point.
Fig. 5 diagram is from the difference trace of spectrum monitoring system.
Fig. 6 is the flow chart of determining another execution mode of polishing end point.
Component symbol and title identical in each is graphic are indicated identical element.
Embodiment
Referring to Fig. 1, substrate 10 can comprise wafer 12, will stand outermost layer 14 and the one or more the Subs 16 between outermost layer 16 and wafer 12 of polishing, and some in the Sub 16 are usually patterned.The spectrum end point determination potential problems is that the thickness of the Sub may change from the substrate to the substrate during chemico-mechanical polishing.Therefore, depend on the Sub, in fact the substrate that outermost layer has same thickness can reflect different spectrum.Thereby, be used to the target optical spectrum of the polishing end point that triggers some substrates, may other substrates not played to suitable effect, for example, if the Sub has different thickness.Yet, by spectrum and a plurality of spectrum that will obtain during polishing, compare, can compensate this impact, this a plurality of spectrum representative is the variation in layer below.
Fig. 2 illustrates the polissoir 20 that can operate with polishing substrate 10.Polissoir 20 comprises rotatable plate-like pressing plate 24, and polishing pad 30 is positioned on this plate-like pressing plate 24.This pressing plate can operate to rotate around axle 25.For example, motor can rotate driving shaft 22 so that pressing plate 24 rotations.
By comprising hole (that is, running through the hole of this polishing pad) or solid window, provide the optical path 36 of passing polishing pad.Although this solid window can be supported on pressing plate 24 and be projected in the hole in polishing pad in some embodiments, solid window can be fixed to polishing pad.Usually polishing pad 30 is placed on pressing plate 24, so that hole or window cover the optical head 53 of the groove 26 that is arranged in pressing plate 24.Thereby optical head 53 has and passes hole or the window optical path to just polished substrate.This optical head further describes hereinafter.
Polissoir 20 comprises combination slurries/cleaning arm 39.During polishing, arm 39 can operate to distribute the polishing liquid 38 such as slurries.Perhaps, this polissoir comprise can operate with by distribution of slurry to the grout port on polishing pad 30.
Polissoir 20 comprises can operate substrate 10 to be secured to the carrier head 70 on polishing pad 30.Carrier head 70 is to hang on the supporting construction 72 of carousel for example, and carrier head 70 is connected to carrier head turning motor 76 by carrier driving shaft 74, so that carrier head can be around axle 71 rotations.In addition, carrier head 70 can laterally swing in the radial slot in being formed at supporting construction 72.In operation, make central shaft 25 rotation of pressing plate around this pressing plate, and make carrier head around the laterally translation of top surface across polishing pad of central shaft 71 rotations of this carrier head and carrier head.
Polissoir also comprises optical monitoring system, and this optical monitoring system can be as discussed below for determining polishing end point.Optical monitoring system comprises light source 51 and photodetector 52.Light spreads out of from light source 51, passes the optical path 36 in polishing pad 30, clashes into substrate 10 and is reflected back and passes optical path 36 from substrate 10, and advancing to photodetector 52.
As mentioned, pressing plate 24 comprises groove 26, and optical head 53 is arranged in groove 26.An end of the trunk 55 of optical head 53 fixing breakout cables 54, breakout cable 54 are configured to transmit light to the substrate surface with from just polished.Optical head 53 can comprise one or more lens or the window of the end that covers breakout cable 54.Perhaps, optical head 53 end adjacent to solid window in polishing pad of fixing trunk 55 only.Optical head 53 can the fixing flushing system said nozzle.Optical head 53 can remove from groove 26 as required, for example, to realize preventative or correcting property, safeguards.
This pressing plate comprises removable monitoring modular on the spot 50.Monitoring modular 50 can comprise following one or more on the spot: light source 51, photodetector 52 and for to light source 51 and photodetector 52 transmitted signals with from light source 51 and photodetector 52, receive the circuit of signals.For example, the output of detector 52 can be digital electronic signal, and this digital electronic signal is delivered to the controller for optical monitoring system through the rotary coupler (for example, collector ring) in driving shaft 22.Light source is opened or closed to the control command that can respond the digital electronic signal that is delivered to module 50 from controller via rotary coupler similarly.
The component 56 that monitoring modular can also fixing bifurcation fiber 54 on the spot and 58 end separately.Light source can operate with transmission light, and this only transmits via branch 56 and spreads out of from the end of the trunk 55 that is arranged in optical head 53, and this light impinges upon on just polished substrate.From only receiving in the end of the trunk 55 that is arranged in optical head 53 of substrate reflection, and be sent to photodetector 52 via branch 58.
In one embodiment, breakout cable 54 is a branch of optical fiber.This bundle comprises first group of optical fiber and second group of optical fiber.Optical fiber in first group is through connecting so that light is sent to just polished substrate surface from light source 51.Optical fiber in second group is through connecting to receive from the light of just polished substrate surface reflection and the light that is received is sent to photodetector.Can arrange these optical fiber so that the optical fiber in second group forms the shape (seen in the cross section at breakout cable 54) of the similar X centered by the longitudinal axis of bifurcation fiber 54.Perhaps, can implement other layouts.For example, the optical fiber in second group can form the shape of the similar V that is mirror images of one another.Suitable bifurcation fiber can be purchased from the pause Verity Instruments in city of Texas Caro, Inc..
Photodetector 52 can be spectrometer.Spectrometer is a kind of for measuring the optical instrument of the light intensity on a part of electromagnetic spectrum basically.Suitable spectrometer is grating spectrograph.Typical case's output of spectrometer is the luminous intensity for the function of wavelength.
In operation, calculation element can receive, for example, the signal of beared information, this information is described the spectrum of the light that is received by photodetector 52 for the time frame of the concrete flash of light of light source or detector.Thereby this spectrum is the spectrum of field survey during polishing.
Be not subjected to any concrete one theory, from spectrum evolution when polishing is carried out due to the change of outermost thickness of the light of substrate 10 reflection, thereby produce when a succession of, become spectrum.In addition, concrete spectrum is to be showed by stacked concrete thickness.
This calculation element can be processed this signal to determine the terminal of polishing step.Specifically, calculation element can be carried out based on the spectrum of measuring and determine when the logic that reaches terminal.
Briefly, calculation element can compare spectrum and a plurality of reference spectra measured, and the result of usage comparison determines when and reaches terminal.
As used herein, reference spectra is the predefine spectrum that produced before the polishing of substrate.Reference spectra can have predefine associated with value substrate properties (such as outermost thickness) (that is, defining before polishing operation).Reference spectra can be to produce by rule of thumb, for example, by measuring the spectrum from the test base with known layer thickness, or can produce according to theory.
Reference spectra can be target optical spectrum, and this target optical spectrum can be endpoint procedure Compensation Objectives spectrum or Compensation Objectives spectrum not.Compensation Objectives spectrum does not relate to the spectrum of being showed by this substrate when outermost layer has target thickness.For example, target thickness can be one to three micron.Perhaps, for example, when removing the film of paying close attention in order to exposing lower film, target thickness can be zero.Yet, system receive represent between the spectrum of target thickness and time that polishing stops can exist lag time (this may be due to endpoint detection algorithm need to be from the spectrum of repeatedly pressing plate rotation, for instruction is transferred to the time for the treatment of system and stops pressing plate from controller, rotate the needed time).Therefore, polishing end point can be arranged to the target thickness time before that reaches.Endpoint procedure Compensation Objectives spectrum is a kind of like this spectrum, when this spectrum is used for triggering polishing end point under concrete endpoint algorithm and polishing control system, this spectrum produces the substrate that has substantially target thickness, for example, with situation about compensating lag time is not compared, this thickness is significantly close to target thickness.
As mentioned above, there are a plurality of reference spectra for the outermost concrete thickness of paying close attention to.Really so, even be because outermost layer has same thickness, for the thickness difference of the Sub of different substrate, still can produce different spectrum.In addition, for the substrate of different integrated chip products, will have different layer patterns, even outermost layer has same thickness and also can produce different spectrum like this.Thereby, can have a plurality of spectrum for outermost concrete thickness, and this a plurality of spectrum can comprise because the Sub thickness is different or cause the different spectrum that differs from one another of pattern because substrate aims to provide different product.
Reference spectra is to collect before polishing operation, and stores the associated of each reference spectra and the substrate properties that is associated.This reference spectra can be determined by rule of thumb.
For example, in order to determine target optical spectrum, can before polishing, measure at measuring station with the product substrate and have the characteristic of " setting " substrate of identical patterns.This substrate properties can be outermost thickness.Then, this arranges substrate polishing, collects simultaneously spectrum.Can periodically from this polishing system, remove this substrate is set, and measure at measuring station the characteristic that this arranges substrate.This substrate can be by excessive polishing, that is, polishing surpasses the thickness of wanting, in order to can obtain when reaching target thickness the spectrum of the light that reflects from this substrate.
With measured thickness and collected spectrum from collected spectrum, selecting the one or more spectrum that will be showed by substrate through being defined as when substrate has concern thickness.Specifically, can carry out linear interpolation with film thickness before measured polishing and polishing metacoxal plate thickness, to determine to reach the time of target thickness and the corresponding spectrum of displaying this moment.By being determined to be in while reaching target thickness the one or more spectrum that will show, be appointed as one or more target optical spectrums.
Then, can repeat these steps to produce extra reference spectra to the one or more extra substrates that arrange that have identical patterns from the product substrate and have different the Sub thickness.Thereby the set of the reference spectra that produces comprises for same target thickness but the target optical spectrum that differs from one another because the Sub thickness is different.
Additionally or alternati, then can repeat these steps to produce extra reference spectra for the one or more extra substrates that arrange that have a different pattern with the product substrate.Thereby the set of the reference spectra that produces comprises for same target thickness but the target optical spectrum that differs from one another because pattern is different.
Optionally, process collected spectrum to strengthen accuracy and/or accuracy.Can process spectrum, for example: spectrum is standardized as to common reference, spectrum is averaged, and/or filter the noise in spectrum.
In addition, can carry out some or all in computing reference spectrum according to theory, for example, with the optical model of substrate layer, calculate.
Fig. 4 illustrates the method 200 of determining the terminal of polishing step based on the evaluation of end point logic of spectrum of using.With above-mentioned polissoir, carry out polishing product substrate (step 402).When each rotation of pressing plate, carry out following steps.
At least one spectrum (step 404) of the light that measurement reflects from just polished substrate surface.Optionally, can measure a plurality of spectrum, for example, can obtain the spectrum that radius different on substrate is measured from the single rotation of pressing plate, for example, at a 301-311 (Fig. 3).If measured a plurality of spectrum, can select so the subset of the one or more spectrum in these spectrum to come for endpoint detection algorithm.For example, can be chosen in the spectrum the sampling location place at adjacent substrates center measured (for example, at the point 305 shown in Fig. 3, point 306 and put 307 places).Optionally process the spectrum of measuring during the front pressuring plate rotation, to strengthen accuracy and/or accuracy.
Difference (step 406) between each in each and the reference spectra of calculating in institute's photometry spectrum of selecting.Reference spectra can be target optical spectrum.In one embodiment, this difference is the summation of the intensity difference on wave-length coverage.That is,
Wherein a and b are respectively lower limit and the upper limit of the wave-length coverage of spectrum, and I
Current(λ) and I
Reference(λ) be respectively for the intensity of the current spectrum of setted wavelength and the intensity of target optical spectrum.Perhaps, difference can be calculated as mean square error, that is:
The mode of the difference between each in a kind of each and reference spectra of calculating in current spectrum is each that select in current spectrum.For each selected current spectrum, for each in reference spectra, carry out calculated difference.For example, given current spectrum e, f and g and reference spectra E, F and G, will carry out calculated difference for each in the following combination of current spectrum and reference spectra: e and E, e and F, e and G, f and E, f and F, f and G, g and E, g and F and g and G.
Add the minimal difference in institute's calculated difference to difference trace (step 408).Usually the difference trace is once just upgraded in the every rotation of pressing plate.The difference trace is generally the curve chart (being in the case the minimal difference in the difference for calculating when the front pressuring plate rotation) of a difference in institute's calculated difference.As to the substituting of minimal difference, can be by another difference in described difference, for example, add medium differences or the difference that is only second to minimal difference to this trace.
Optionally, can process this difference trace, for example, by from previous one or more institutes calculated difference, filtering out, departing from the institute's calculated difference that exceeds threshold value and make this difference trace level and smooth.
Determine that whether the difference trace is lower than threshold value (step 410).In case the difference trace is crossed threshold value downwards, the terminal logic starts and can be applied to the endpoint detection state, for example, and the minimum value (step 412) of difference trace.For example, when the difference trace starts to rise concrete threshold value over minimum value, if or the slope of difference trace drop to lower than the threshold value that approaches zero, can call terminal so, maybe can use other window logics.In case the terminal logic detection, to terminal state (step 414), stops polishing (step 416).
In some embodiments, in case the difference trace drops to lower than threshold value, will provide and near the concrete reference spectra of coupling (for example, with measured spectral differences minimum), use and act on unique reference spectra that the residue in the evaluation of end point processing is processed.Guarantee that like this terminal is based on the target optical spectrum that represents substrate, in this substrate, the Sub is similar to just polished substrate.
By use, represent a plurality of reference spectra of the substrate of the Sub with different-thickness, this end-point detecting system becomes more insensitive to the Sub, thereby can improve the reliability of endpoint system.Similarly, by use, represent a plurality of reference spectra of the substrate with different pattern, this end-point detecting system becomes more insensitive to change in pattern, thereby can improve the reliability of endpoint system.
If do not determine that the difference trace has reached the threshold range of minimum value, allow so polishing to continue and take the circumstances into consideration repeating step 404, step 406, step 408.
Fig. 5 is the exemplary graph of difference trace that the function as the time of threshold value is shown.Trace 502 is the difference trace, and this difference trace can be through filtering with level and smooth.When level and smooth difference trace 502 reaches the threshold value 504 of minimum value more than 506, activate end point determination 508.
Fig. 6 illustrates the method 600 for the terminal of determining polishing step.Before polishing operation, produce reference spectra, for example, collect by rule of thumb (such as substrate and measure spectrum are set by polishing) or calculate (for example using the optical model of substrate layer) according to theory.Spectrum is stored in storehouse.Yet, being different from the processing of the Fig. 4 that uses the unique target optical spectrum that represents target thickness, the reference spectra representative in storehouse has the substrate of various different-thickness in skin.Then, the spectrum in measured spectrum and storehouse is compared, and select in storehouse a spectrum in spectrum as coupling.
For spectrum is indexed, so that each spectrum that representative has in the spectrum set of substrate of concrete the Sub thickness has unique index value (spectrum that representative has the substrate of different the Sub thickness can be associated with same index value).Implement index editing, in order to carry out the permutation index value according to spectrum, measuring or be desirably in the order of spectrum being measured during polishing.Index value can be through selecting with polishing, to carry out and monotonic increase, and for example, index value can be proportional with the pressing plate number of revolutions, for example, and linear ratio.Thereby each call number can be integer, and this call number can represent the pressing plate rotation of expectation, under this rotation, associated spectrum will occur.This storehouse can be implemented in the memory of calculation element of polissoir.
Polishing is from the substrate (step 602) of this batch substrate, and each pressing plate rotation is carried out to following steps.Measure one or more spectrum to obtain for the current spectrum (step 604) when the front pressuring plate rotation.Determine the spectrum (step 606) of storing in the storehouse of the current spectrum of best fit.From storehouse, determining the index (step 608) of the storehouse spectrum of the current spectrum of best fit, and add this index to terminal index trace (step 610).As discussed above, this index can determine before this polishing operation, and by this index stores for spectrum being associated to the database of index, for later access.When endpoint trace reaches the index of target optical spectrum, call terminal (step 612).
In certain embodiments, according to time or pressing plate rotation, the index that matches each spectrum that obtains is drawn.Use sane line match, line is fitted to painting call number.In this line and target index intersection definition terminal time or rotation.
As discussed above, by use, represent a plurality of reference spectra of the substrate of the Sub with different-thickness, this end-point detecting system becomes more insensitive to the Sub, thereby can improve the reliability of endpoint system.
Adaptable method is searched with the part for match spectrum in storehouse of restriction during endpoint procedure.This storehouse generally includes than the wider spectral region that will obtain when the polishing substrate.Wider scope is the spectrum that obtains due to after the spectrum of the acquisition of the beginning outermost layer from thicker and excessive polishing.During substrate polishing, library searching is limited in the preset range of storehouse spectrum.In certain embodiments, determine the current rotation index N of just polished substrate.Can determine N by searching for whole storehouses spectrum.For the spectrum that obtains during rotation subsequently, in the scope of the degree of freedom of N, storehouse is searched for.That is, if during a rotation, find that call number is N, during the rotation subsequently postrotational at X so, that the degree of freedom is Y, by the scope of search, be, from (N+X)-Y to (N+X)+Y.For example, if, when the polishing for the first time of substrate is rotated, find that match index is 8 and the degree of freedom is chosen as to 5, so for the spectrum that obtains, only check that the spectrum corresponding to call number 9 ± 5 mates with acquisition during rotation for the second time.
The repertoire operation of describing in embodiments of the invention and this specification can be implemented in Fundamental Digital Circuit, or is implemented in computer software, firmware or hardware, comprises disclosed structural elements and structural equivalents or their combinations in this specification.Embodiments of the invention may be embodied as one or more computer programs, namely, one or more computer programs of visibly realizing in information carrier, for example, in the signal of machine-readable storage device or propagation, realize, with for by for example data processing equipment of programmable processor, computer or a plurality of processor or computer and so on, carrying out, or control the operation of these data processing equipments.Computer program (also referred to as program, software, software application or code) can write with any type of programming language (comprising compiler language or interpretative code), and computer program can be deployed any form, comprises as stand-alone program or as module, assembly, subroutine or be applicable to other unit in computing environment.Computer program must be corresponding to file.Program can be stored in the part of the file of preserving other programs or data, be stored in special Single document for the discussion program, or be stored in a plurality of coordinative files (for example, storing the file of one or more modules, subprogram or partial code).Computer program can be deployed to carry out on a computer a position or a plurality of computer, or across a plurality of position distribution and by interconnection of telecommunication network.
By one or more programmable processors, carry out one or more computer programs, by to the input data, operating and produce output, to carry out function, can carry out processing and the logic flow in this specification, described.These are processed and logic flow can also be passed through dedicated logic circuit (for example, FPGA (field programmable gate array) or ASIC (application-specific integrated circuit (ASIC))) and carries out, and equipment can also be embodied as dedicated logic circuit.
Above-mentioned polissoir and method can be applied in various polishing systems.Any one in polishing pad or carrier head or two can move to provide the relative motion between polished surface and substrate.For example, pressing plate can surround orbit operation rather than rotation.Polishing pad can be the liner of the circle (or some other shapes) that is fixed to pressing plate.Some aspects of end-point detecting system go for the linear planarization system, and for example, in the linear planarization system, this polishing pad is linearly moving continuous band or disc type band.Polishing layer can be (for example, have or not the Packed polyurethane of tool) polishing material, soft material or the fixed abrasive materials of standard.Used the term of relative positioning; Should be understood that, polished surface and substrate can be retained on vertical direction or some other directions.
Specific embodiments of the invention have been described.Other embodiment are in the scope of above claims.For example, can carry out the action described in the enforcement of rights claim with different order, and still realize needed result.
Claims (8)
1. computer-implemented method comprises:
With optical monitoring system on the spot, obtain at least one current spectrum, described current spectrum is the spectrum from the light of substrate reflection, described substrate has the outermost layer separately that stands polishing and at least one the Sub separately, and from the spectrum of the light of substrate reflection, depends on the thickness of described outermost thickness and described the Sub;
Described current spectrum is compared to the described current spectrum of which spectrum best fit of storing in described storehouse to determine from a plurality of different reference spectra in storehouse, each representative in described a plurality of reference spectra is from the spectrum of the light of a reflection separately a plurality of reference substrates, each reference substrate has outermost layer and at least one the Sub separately separately, the outermost layer separately of described a plurality of reference substrates share common thickness simultaneously among described a plurality of reference substrates separately at least one the Sub on thickness, be different; With
Based on the best fit spectrum in described storehouse, determine whether arrived polishing end point for having the described outermost described substrate that stands polishing.
2. method according to claim 1, is characterized in that, determines whether to arrive described polishing end point and comprise the difference of calculating between described current spectrum and described reference spectra.
3. method according to claim 1, is characterized in that, further is included in different time and obtains a plurality of current spectrum.
4. method according to claim 3, is characterized in that, described a plurality of current spectrum comprises a succession of current spectrum from a plurality of scannings of the described optical monitoring system on the spot across described substrate.
5. method according to claim 3, is characterized in that, described a plurality of current spectrum comprises a plurality of current spectrum from the same scan of the described optical monitoring system on the spot across described substrate.
6. method according to claim 5, is characterized in that, further comprises and compare to produce a plurality of differences between described current spectrum and described reference spectra by the described a plurality of current spectrum from described same scan and described a plurality of reference spectra.
7. method according to claim 6, is characterized in that, further comprises and determine the minimal difference in described a plurality of differences and determine whether to arrive polishing end point with the described minimal difference in described a plurality of differences.
8. computer-implemented method comprises:
With optical monitoring system on the spot, obtain at least one current spectrum, described current spectrum is the spectrum from the light of substrate reflection, described substrate has the outermost layer separately that stands polishing and at least one the Sub separately, and from the spectrum of the light of substrate reflection, depends on the thickness of described outermost thickness and described the Sub;
Described current spectrum is compared to the described current spectrum of which spectrum best fit of storing in described storehouse to determine from a plurality of different reference spectra in storehouse, each representative in described a plurality of reference spectra is from the spectrum of the light of a reflection separately a plurality of reference substrates, each reference substrate has outermost layer and at least one the Sub separately separately, the outermost layer separately of described a plurality of reference substrates share common thickness simultaneously among described a plurality of reference substrates separately at least one the Sub on pattern, be different; With
Based on the best fit spectrum in described storehouse, determine whether arrived polishing end point for having the described outermost described substrate that stands polishing.
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Also Published As
| Publication number | Publication date |
|---|---|
| CN102017094A (en) | 2011-04-13 |
| KR20110021842A (en) | 2011-03-04 |
| JP2011520264A (en) | 2011-07-14 |
| CN103537975A (en) | 2014-01-29 |
| JP5542802B2 (en) | 2014-07-09 |
| KR101619374B1 (en) | 2016-05-10 |
| KR20160052769A (en) | 2016-05-12 |
| US20090275265A1 (en) | 2009-11-05 |
| WO2009134865A2 (en) | 2009-11-05 |
| WO2009134865A3 (en) | 2010-02-18 |
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