CN102012073A - Air conditioner applied in communication base station - Google Patents
Air conditioner applied in communication base station Download PDFInfo
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- CN102012073A CN102012073A CN 201010593949 CN201010593949A CN102012073A CN 102012073 A CN102012073 A CN 102012073A CN 201010593949 CN201010593949 CN 201010593949 CN 201010593949 A CN201010593949 A CN 201010593949A CN 102012073 A CN102012073 A CN 102012073A
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Abstract
The invention discloses an air conditioner applied in a communication base station, which comprises a semiconductor particle layer, a DC power supply, a first relay, a second relay, a first N-type metal oxide semiconductor (MOS) tube and a second N-type MOS tube, wherein the semiconductor particle layer is formed by alternate arrangement of multiple N-type semiconductor particles and P-type semiconductor particles, and the multiple N-type semiconductor particles and the P-type semiconductor particles are connected in series by conductors; the DC power supply is used for providing a voltage for an air conditioner controller; one end of the first relay and one end of the second relay are respectively connected with the positive pole of the DC power supply; the other end of the first relay is connected with one end of the first N-type MOS tube; the other end of the second relay is connected with one end of the second N-type MOS tube; the other end of the first N-type MOS tube and the other end of the second N-type MOS tube are connected with the negative pole of the DC power supply; and the N pole of the semiconductor particle layer is connected with the joint of the second relay and the second N-type MOS tube, and the P pole of the semiconductor layer is connected with the joint of the first relay and the first N-type MOS tube. The air conditioner in the invention has the advantages of small power consumption and strong stability in conversion between a refrigeration mode and a heating mode.
Description
Technical field
The present invention relates to a kind of air-conditioner, be specifically related to a kind of air-conditioner that is applied to communication base station.
Background technology
There are a large amount of parts to need cooling in the electronics industry, for example the accumulator cell heat preserving cabinet that uses in the existing communication base station for reducing operation expense, is realized the target that base station energy-saving reduces discharging, need allow battery be in the working environment about 10-26 ℃, to guarantee the performance and the life-span of battery.For this reason, temperature control equipment need be installed in battery rack, but the use of existing compressor air-conditioning is the refrigerant that contains freon, can cause harmful effect to environment; Owing to will use parts such as compressor, evaporimeter, condenser, cause equipment volume and weight all very big; And complex production process (need bend copper pipe, professional welding operation etc.) has increased the hidden danger that refrigerant and corrosive liquids are revealed, this also make go wrong and fault after, maintenance work acquires a certain degree of difficulty; In addition, equipment can produce bigger vibration and noise in real work, and the communication base station for building in residential quarters probably can influence the daily life of surrounding resident.And the size of semiconductor refrigerating air-conditioning is little, can make volume less than the little refrigerator of 1cm; In light weight, miniature refrigerator often can be so small to have only several grams or tens grams.There is not mechanical running part, noiselessness in the work, aneroid, gas working media, thereby free from environmental pollution, the refrigeration parameter is not subjected to direction in space and gravity effect, so semiconductor air conditioner becomes the first-selection of using in the electronics industry.
Power consumption is big, thereby the big refrigerating efficiency of heat is low but the conventional semiconductor air-conditioning exists, and refrigeration mode and heating mode change-over circuit poor stability, switches repeatedly and damages device easily.
Therefore how to design that a kind of power consumption is little, refrigeration and the strong semiconductor air conditioner of heating mode conversion stability become the direction that those skilled in the art make great efforts.
Summary of the invention
The object of the invention provides a kind of air-conditioner that is applied to communication base station, and this air-conditioner power consumption is little, refrigeration and heating mode conversion stability is strong.
For achieving the above object, the technical solution used in the present invention is:
A kind of air-conditioner that is applied to communication base station comprises:
The semiconductor grain layer that several N types and P-type semiconductor particle are staggered and form, be in series with conductor between this N type and the P-type semiconductor particle, this semiconductor grain layer one end is the P utmost point, the other end is the N utmost point, described semiconductor grain layer one end is provided with heat-conducting layer, the other end is provided with heat dissipating layer, the N pole tension that is higher than the semiconductor grain layer when the P of described semiconductor grain layer pole tension, then the semiconductor grain layer is in refrigerating state, when the N of described semiconductor grain layer pole tension is higher than the P pole tension of semiconductor grain layer, then the semiconductor grain layer is in the state of heating;
One direct current power supply is used to provide the voltage of described air-conditioner controller;
First, second relay and first, second N type metal-oxide-semiconductor, wherein first relay and second relay separately an end be connected with the positive pole of described dc source respectively, the first relay other end is connected with a described N type metal-oxide-semiconductor one end, the second relay other end is connected with described the 2nd N type metal-oxide-semiconductor one end, and a N type metal-oxide-semiconductor is connected with the negative pole of described dc source with the 2nd N type metal-oxide-semiconductor other end; The N utmost point of described semiconductor grain layer is connected to the contact of second relay and the 2nd N type metal-oxide-semiconductor, and the P utmost point of described semiconductor grain layer is connected to the contact of first relay and a N type metal-oxide-semiconductor;
One controller, this controller is provided with the first control pin, the second control pin that is used to control a N type metal-oxide-semiconductor break-make that are used to control first relay on-off, be used to the 4th control pin controlling the 3rd control pin of second relay on-off and be used to control the 2nd N type metal-oxide-semiconductor break-make, be provided with first phase inverter between the described first control pin and first relay, be provided with second phase inverter between described the 3rd control pin and second relay;
When changing refrigeration mode into by heating mode, described controller puts the second control pin high level and cuts out a N type metal-oxide-semiconductor earlier, again the 3rd control pin is put low level and closed second relay, again the first control pin is put high level and opened first relay, again the 4th control pin is put low level and opened the 2nd N type metal-oxide-semiconductor;
When changing heating mode into by refrigeration mode, described controller puts the 4th control pin high level and cuts out the 2nd N type metal-oxide-semiconductor earlier, again the first control pin is put low level and closed first relay, again the 3rd control pin is put high level and opened second relay, again the second control pin is put low level and opened a N type metal-oxide-semiconductor.
Related content in the technique scheme is explained as follows:
1, in the such scheme, a described fuse is between the contact of the positive pole of described dc source and first relay and second relay.
2, in the such scheme, be provided with an optocoupler between described second a control pin and the described N type metal-oxide-semiconductor, be provided with an optocoupler between described the 4th control pin and described the 2nd N type metal-oxide-semiconductor.
3, in the such scheme, described first phase inverter and second phase inverter adopt the anti-phase power drive chip of ULN2003 type.
Because the technique scheme utilization, the present invention compared with prior art has following advantage and effect:
1, the present invention's circuit of being used to switch the dc load power positive-negative polarity can reduce the heat radiation power of switching device itself, and it is worked long hours at normal temperatures, has improved the stability of switching device; Secondly, the switch relay switch operating carries out under very little bearing power, has protected the contact well, has improved its service life, has correspondingly also improved the stability and the service life of semiconductor air conditioner; Once more, oneself power consumption reduces, and has improved the operating efficiency of semiconductor air conditioner, that is has improved its Energy Efficiency Ratio; Once more,, therefore, reduced the volume of semiconductor air conditioner, reduced cost, also increased competitiveness with other like products owing to do not need high-power radiating element.
2, the present invention adopts N type metal-oxide-semiconductor and the hybrid H bridge circuit of relay to solve the excessive problem of traditional H bridge PMOS pipe dissipated power well, also having solved common relay can not be at the switching problem in the direct current powerful device circuit, learn from other's strong points to offset one's weaknesses separately, on semiconductor air conditioner, obtain good application, it has promptly solved device heat radiation itself, promoted the operating efficiency of air conditioner, improved the stability of hardware simultaneously, prolonged service life, in addition, novel H bridge circuit also can be applied to other occasions, for some dc high voltage (greater than 30V), high power load need switch the situation of its cathode and anode directions, can be suitable for, have application fields.
3, the present invention is in the time will converting refrigeration to, at first put the second control pin high level by the software processing, close a N type metal-oxide-semiconductor, make load circuit disconnect, the semiconductor chilling plate dead electricity is not worked, and puts the 3rd control pin low level again, closed relay second relay, owing to do not form loop current this moment, can not cause damage to relay contact so cut off action.Put the first control pin high level then, make the relay conducting of winning, equally, because do not form the loop this moment, there is not electric current, closed action is to not damage of relay contact, the most rearmounted the 4th control pin low level makes the 2nd N type metal-oxide-semiconductor conducting, and this moment, the 48V dc source formed the loop through the first relay à semiconductor chilling plate P utmost point à semiconductor chilling plate N utmost point à the 2nd N type metal-oxide-semiconductor, the semiconductor chilling plate forward gets electric, and refrigeration brings into operation; When converting to when heating, at first put the 4th control pin high level, close the 2nd N type metal-oxide-semiconductor, make load circuit disconnect, the semiconductor chilling plate dead electricity is not worked, and puts the 4th control pin low level again, closes first relay.Put the 3rd control pin B-TR high level then, make the second relay conducting, the most rearmounted second control pin B-BL low level, make the N type metal-oxide-semiconductor conducting of winning, this moment, the 48V dc source formed the loop through second relay K, 2 à semiconductor chilling plate N utmost point à semiconductor chilling plate P utmost point à the one N type metal-oxide-semiconductor, semiconductor chilling plate is electricly reverse, heats to bring into operation.It is strong effectively to have improved refrigeration and heating mode conversion stability, has avoided components from being damaged.
Description of drawings
Accompanying drawing 1 is structural representation one of the present invention;
Accompanying drawing 2 is the anti-phase power drive chip structure of the present invention schematic diagram;
Accompanying drawing 3 shows the structure intention for controller of the present invention.
The specific embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Embodiment: a kind of air-conditioner that is applied to communication base station comprises:
The semiconductor grain layer that several N types and P-type semiconductor particle are staggered and form, be in series with conductor between this N type and the P-type semiconductor particle, this semiconductor grain layer one end is the P utmost point, the other end is the N utmost point, described semiconductor grain layer one end is provided with heat-conducting layer, the other end is provided with heat dissipating layer, the N pole tension that is higher than the semiconductor grain layer when the P of described semiconductor grain layer pole tension, then the semiconductor grain layer is in refrigerating state, when the N of described semiconductor grain layer pole tension is higher than the P pole tension of semiconductor grain layer, then the semiconductor grain layer is in the state of heating;
One direct current power supply is used to provide the voltage of described air-conditioner controller;
First, second relay K 1, K2 and first, second N type metal-oxide-semiconductor Q1, Q2, wherein first relay K 1 and second relay K 2 separately an end be connected with the positive pole of described dc source respectively, first relay K, 1 other end is connected with a described N type metal-oxide-semiconductor one end, second relay K, 2 other ends are connected with described the 2nd N type metal-oxide-semiconductor Q2 one end, and a N type metal-oxide-semiconductor Q1 is connected with the negative pole of described dc source with the 2nd N type metal-oxide-semiconductor Q2 other end; The N utmost point of described semiconductor grain layer is connected to the contact of second relay K 2 and the 2nd N type metal-oxide-semiconductor Q2, and the P utmost point of described semiconductor grain layer is connected to the contact of first relay K 1 and a N type metal-oxide-semiconductor Q1;
One controller, this controller is provided with the first control pin B-TL, the second control pin B-BL that is used to control a N type metal-oxide-semiconductor Q1 break-make that are used to control first relay K, 1 break-make, be used to control the 3rd control pin B-TR of second relay K, 2 break-makes and be used to control the 4th control pin B-BR of the 2nd N type metal-oxide-semiconductor Q2 break-make, be provided with first phase inverter between the described first control pin B-TL and first relay K 1, be provided with second phase inverter between described the 3rd control pin B-TR and second relay K 2, phase inverter is used for the coil of control relay.
When changing refrigeration mode into by heating mode, described controller puts the second control pin B-BL high level and cuts out a N type metal-oxide-semiconductor Q1 earlier, again the 3rd control pin B-TR is put low level and closes second relay K 2, again the first control pin B-TL is put high level and opens first relay K 1, again the 4th control pin B-BR is put low level and opens the 2nd N type metal-oxide-semiconductor Q2; Detailed process is: handle by software and at first put the second control pin B-BL high level, close a N type metal-oxide-semiconductor Q1, make load circuit disconnect, the semiconductor chilling plate dead electricity is not worked, put the 3rd control pin B-TR low level again, closed relay second relay K 2 owing to do not form loop current this moment, can not cause damage so cut off action to relay contact.Put the first control pin B-TL high level then, make relay K 1 conducting of winning, equally, because do not form the loop this moment, there is not electric current, closed action is to not damage of relay contact, the most rearmounted the 4th control pin B-BR low level makes the 2nd N type metal-oxide-semiconductor Q2 conducting, and this moment, the 48V dc source formed the loop through first relay K, 1 à semiconductor chilling plate P utmost point à semiconductor chilling plate N utmost point à the 2nd N type metal-oxide-semiconductor, the semiconductor chilling plate forward gets electric, and refrigeration brings into operation.
When changing heating mode into by refrigeration mode, described controller puts the 4th control pin B-BR high level and cuts out the 2nd N type metal-oxide-semiconductor Q2 earlier, again the first control pin B-TL is put low level and closes first relay K 1, again the 3rd control pin B-TR is put high level and opens second relay K 2, again the second control pin B-BL is put low level and opens a N type metal-oxide-semiconductor Q1.Detailed process is: at first put the 4th control pin B-BR high level, close the 2nd N type metal-oxide-semiconductor Q2, make load circuit disconnect, the semiconductor chilling plate dead electricity is not worked, and puts the 4th control pin B-TL low level again, closes first relay K 1.Put the 3rd control pin B-TR high level then, make the 2nd K2 conducting, the most rearmounted second control pin B-BL low level, make the N type metal-oxide-semiconductor Q1 conducting of winning, this moment, the 48V dc source formed the loop through second relay K, 2 à semiconductor chilling plate N utmost point à semiconductor chilling plate P utmost point à the one N type metal-oxide-semiconductor Q1, semiconductor chilling plate is electricly reverse, heats to bring into operation.
A described fuse F1 is between the contact of the positive pole of described dc source and first relay and second relay.
Be provided with an optocoupler between described second a control pin B-BL and the described N type metal-oxide-semiconductor Q1, be provided with an optocoupler between described the 4th control pin B-BR and described the 2nd N type metal-oxide-semiconductor Q2.
Described first phase inverter and second phase inverter adopt the anti-phase power drive chip of ULN2003 type.
The foregoing description only is explanation technical conceive of the present invention and characteristics, and its purpose is to allow the personage who is familiar with this technology can understand content of the present invention and enforcement according to this, can not limit protection scope of the present invention with this.All equivalences that spirit essence is done according to the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (4)
1. air-conditioner that is applied to communication base station is characterized in that: comprising:
The semiconductor grain layer that several N types and P-type semiconductor particle are staggered and form, be in series with conductor between this N type and the P-type semiconductor particle, this semiconductor grain layer one end is the P utmost point, the other end is the N utmost point, described semiconductor grain layer one end is provided with heat-conducting layer, the other end is provided with heat dissipating layer, the N pole tension that is higher than the semiconductor grain layer when the P of described semiconductor grain layer pole tension, then the semiconductor grain layer is in refrigerating state, when the N of described semiconductor grain layer pole tension is higher than the P pole tension of semiconductor grain layer, then the semiconductor grain layer is in the state of heating;
One direct current power supply is used to provide the voltage of described air-conditioner controller;
First, second relay (K1, K2) and first, second N type metal-oxide-semiconductor (Q1, Q2), wherein first relay (K1) and second relay (K2) separately an end be connected with the positive pole of described dc source respectively, first relay (K1) other end is connected with a described N type metal-oxide-semiconductor one end, second relay (K2) other end is connected with described the 2nd N type metal-oxide-semiconductor (Q2) end, and a N type metal-oxide-semiconductor (Q1) is connected with the negative pole of described dc source with the 2nd N type metal-oxide-semiconductor (Q2) other end; The N utmost point of described semiconductor grain layer is connected to the contact of second relay (K2) and the 2nd N type metal-oxide-semiconductor (Q2), and the P utmost point of described semiconductor grain layer is connected to the contact of first relay (K1) and a N type metal-oxide-semiconductor (Q1);
One controller, this controller is provided with the first control pin (B-TL) that is used to control first relay (K1) break-make, be used to control the second control pin (B-BL) of N type metal-oxide-semiconductor (Q1) break-make, be used to control the 3rd control pin (B-TR) of second relay (K2) break-make and be used to control the 4th of the 2nd N type metal-oxide-semiconductor (Q2) break-make and control pin (B-BR), be provided with first phase inverter between described first control pin (B-TL) and first relay (K1), be provided with second phase inverter between described the 3rd control pin (B-TR) and second relay (K2);
When changing refrigeration mode into by heating mode, described controller puts the second control pin (B-BL) high level and cuts out a N type metal-oxide-semiconductor (Q1) earlier, again the 3rd control pin (B-TR) is put low level and closed second relay (K2), again the first control pin (B-TL) is put high level and opened first relay (K1), again the 4th control pin (B-BR) is put low level and opened the 2nd N type metal-oxide-semiconductor (Q2);
When changing heating mode into by refrigeration mode, described controller puts the 4th control pin (B-BR) high level and cuts out the 2nd N type metal-oxide-semiconductor (Q2) earlier, again the first control pin (B-TL) is put low level and closed first relay (K1), again the 3rd control pin (B-TR) is put high level and opened second relay (K2), again the second control pin (B-BL) is put low level and opened a N type metal-oxide-semiconductor (Q1).
2. air-conditioner according to claim 1 is characterized in that: a described fuse (F1) is between the contact of the positive pole of described dc source and first relay and second relay.
3. air-conditioner according to claim 1, it is characterized in that: be provided with an optocoupler between described second a control pin (B-BL) and the described N type metal-oxide-semiconductor (Q1), be provided with an optocoupler between described the 4th control pin (B-BR) and described the 2nd N type metal-oxide-semiconductor (Q2).
4. air-conditioner according to claim 1 is characterized in that: described first phase inverter and second phase inverter adopt the anti-phase power drive chip of ULN2003 type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010593949A CN102012073B (en) | 2010-12-17 | 2010-12-17 | Air conditioner applied in communication base station |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010593949A CN102012073B (en) | 2010-12-17 | 2010-12-17 | Air conditioner applied in communication base station |
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| Publication Number | Publication Date |
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| CN102012073A true CN102012073A (en) | 2011-04-13 |
| CN102012073B CN102012073B (en) | 2012-09-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201010593949A Active CN102012073B (en) | 2010-12-17 | 2010-12-17 | Air conditioner applied in communication base station |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2293290A (en) * | 1994-09-16 | 1996-03-20 | Bosch Gmbh Robert | Reverse polarity protection for a high-side switch |
| CN2330944Y (en) * | 1998-02-13 | 1999-07-28 | 西安飞机工业科技开发中心航城机械厂 | Semi-conductor refrigerator air conditioning machine |
| KR20010068320A (en) * | 2000-01-04 | 2001-07-23 | 구자홍 | A wearable cooling and heating appliance |
-
2010
- 2010-12-17 CN CN201010593949A patent/CN102012073B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2293290A (en) * | 1994-09-16 | 1996-03-20 | Bosch Gmbh Robert | Reverse polarity protection for a high-side switch |
| CN2330944Y (en) * | 1998-02-13 | 1999-07-28 | 西安飞机工业科技开发中心航城机械厂 | Semi-conductor refrigerator air conditioning machine |
| KR20010068320A (en) * | 2000-01-04 | 2001-07-23 | 구자홍 | A wearable cooling and heating appliance |
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| Publication number | Publication date |
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| CN102012073B (en) | 2012-09-26 |
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