CN102009943A - Microelectronic device and manufacturing method of micro-electromechanical resonator thereof - Google Patents
Microelectronic device and manufacturing method of micro-electromechanical resonator thereof Download PDFInfo
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- CN102009943A CN102009943A CN200910171679XA CN200910171679A CN102009943A CN 102009943 A CN102009943 A CN 102009943A CN 200910171679X A CN200910171679X A CN 200910171679XA CN 200910171679 A CN200910171679 A CN 200910171679A CN 102009943 A CN102009943 A CN 102009943A
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Abstract
The invention relates to a microelectronic device and a manufacturing method of a micro-electromechanical resonator thereof. The manufacturing method of the micro-electromechanical resonator comprises the following steps of: firstly forming a laminated main body with a part to be suspended, wherein the laminated main body comprises a silicon substrate, multiple metal layers, an isolated layer and a first etching channel, the first etching channel extends from the multiple metal layers into the silicon substrate, and the isolated layer is filled in the first etching channel; then removing a part of the isolated layer to form a second etching channel, wherein the remaining part of the isolated layer covers on the side wall of the first etching channel; and then isotropically etching the silicon substrate through the second etching channel by taking the isolated layer covering on the side wall of the first etching channel as a mask so as to form the micro-electromechanical resonator suspended on the silicon substrate. The manufacturing method of the micro-electromechanical resonator can be integrated with a manufacturing process of a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) circuit so as to simplify the manufacturing process of the microelectronic device, thereby further reducing the production cost of the microelectronic device. Besides, the invention also provides the microelectronic device.
Description
Technical field
The present invention relates to the manufacture method of a kind of microelectronic device and micro electronmechanical resonator thereof, particularly relate to a kind of manufacture method that has than the microelectronic device and the micro electronmechanical resonator thereof of low production cost.
Background technology
MEMS (Micro Electromechanical System, MEMS) a brand-new technology field and industry have been opened up in the development of technology, it has been widely used in the various microelectronic devices with electronics and mechanical double grading, for example pressure inductor, accelerator and mini microphone etc.
In the known manufacturing process of these microelectronic devices, normally micro electronmechanical resonator and cmos circuit are respectively formed in the different substrates, again the two is packaged together and forms microelectronic device.Yet this kind practice is comparatively loaded down with trivial details, causes the production cost of above-mentioned microelectronic device to be difficult to reduce.
This shows that the manufacture method of above-mentioned existing microelectronic device and micro electronmechanical resonator thereof obviously still has inconvenience and defective, and demands urgently further being improved in structure and use.In order to solve the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and common product does not have appropriate structure to address the above problem, therefore, how to improve the manufacture method of micro electronmechanical resonator, to simplify the whole manufacturing process of microelectronic device, thereby reduce the production cost of microelectronic device, this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of new microelectronic device and the manufacture method of micro electronmechanical resonator thereof, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Summary of the invention
The objective of the invention is to, overcome the defective of the manufacture method existence of existing micro electronmechanical resonator, and a kind of manufacture method of new micro electronmechanical resonator is provided, technical problem to be solved is to make it simplify the manufacturing process of microelectronic device, thereby reduce the production cost of microelectronic device, be very suitable for practicality.
Another object of the present invention is to, a kind of new microelectronic device is provided, technical problem to be solved is to make it have lower production cost, thereby is suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.The manufacture method of the micro electronmechanical resonator that proposes according to the present invention, it is to form earlier to have the stacked main body for the treatment of suspension portion, and it comprises silicon base, multiple layer metal layer and separation layer, and wherein insulating barrier is formed on the silicon base, and metal level is formed on the insulating barrier.And stacked main body has at least one first etched channels, and it is in metal level extends to silicon base.Separation layer then fills in first etched channels.Then, remove the part separation layer, expose silicon base to form second etched channels, and the separation layer rest parts covers the sidewall of first etched channels.Then, be mask with the separation layer that is covered in the first etched channels sidewall, by the second etched channels isotropic etching silicon base, to remove the part silicon base of the subordinate side that waits to suspend.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The manufacture method of aforesaid micro electronmechanical resonator, the method that wherein forms this first etched channels is an anisotropic etching.
The manufacture method of aforesaid micro electronmechanical resonator, the method that wherein removes this separation layer of part is the deep reactive ion etch method.
The manufacture method of aforesaid micro electronmechanical resonator, wherein the method by this this silicon base inside of second etched channels isotropic etching comprises employing xenon fluoride gas etch.
The manufacture method of aforesaid micro electronmechanical resonator, wherein this stacked main body more comprises an insulating barrier, is formed between those metal levels and this silicon base.
The manufacture method of aforesaid micro electronmechanical resonator, the method that wherein forms this stacked main body comprises: this silicon base is provided; On this silicon base, form this insulating barrier; Remove this insulating barrier of part and this silicon base of part, to form at least one first opening; In this first opening, insert one first oxide layer; And on this insulating barrier, form those metal levels in regular turn, and each those metal level has at least one second opening that is filled with one second oxide layer respectively, be positioned at this first opening top, wherein this first oxide layer and those second oxide layers constitute this separation layer, this first opening and those second openings constitute this first etched channels, and one of them is less than this first opening at least for those second openings, and one of them protrudes in this first opening top at least and make those metal levels.
The manufacture method of aforesaid micro electronmechanical resonator in the manufacturing process that forms this second etched channels, is to remove this separation layer of part as mask with this metal level that protrudes in this first opening top wherein.
The manufacture method of aforesaid micro electronmechanical resonator, wherein the material of this insulating barrier is the polysilicon of non-doping.
The manufacture method of aforesaid micro electronmechanical resonator, wherein those metal levels comprise aluminium lamination and tungsten layer.
The manufacture method of aforesaid micro electronmechanical resonator, wherein the material of this separation layer is a silica.
The manufacture method of aforesaid micro electronmechanical resonator, wherein first etched channels of this stacked main body is a plurality of, lays respectively at the both sides that this treats suspension portion.
The object of the invention to solve the technical problems also realizes by the following technical solutions.According to a kind of microelectronic device that the present invention proposes, it comprises silicon base, cmos circuit and micro electronmechanical resonator.Wherein, cmos circuit is formed on the silicon base.Silicon base has the erosion dead zone, micro electronmechanical resonator be suspended in this erosion dead zone top and with cmos circuit at least one second etched channels of being separated by.Wherein, second etched channels is communicated with the etching region of silicon base.Micro electronmechanical resonator comprises silicon layer, multiple layer metal layer and separation layer.Wherein, these metal levels are disposed at the silicon layer top, and separation layer then is covered on the sidewall of silicon layer and these metal levels.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid microelectronic device, wherein this micro electronmechanical resonator more comprises an insulating barrier, is disposed between this silicon layer and those metal levels.
Aforesaid microelectronic device, wherein the material of this insulating barrier is the polysilicon of non-doping.
Aforesaid microelectronic device, wherein those metal levels comprise a plurality of the first metal layers and a plurality of second metal level, and those the first metal layers and those second metal levels this silicon layer top that is stacked in interlaced with each other.
Aforesaid microelectronic device, wherein the material of those the first metal layers is a tungsten.
Aforesaid microelectronic device, wherein the material of those second metal levels is an aluminium.
Aforesaid microelectronic device, wherein the material of this separation layer is a silica.
By technique scheme, the manufacture method of microelectronic device of the present invention and micro electronmechanical resonator thereof has following advantage and beneficial effect at least:
1, the manufacture method of micro electronmechanical resonator of the present invention can be integrated mutually with the manufacture process of cmos circuit, with when making microelectronic device, with micro electronmechanical resonator and cmos circuit integration and making in same substrate, simplify the manufacturing process of microelectronic device by this, and then reduce the production cost of microelectronic device.
2, micro electronmechanical resonator of the present invention comprises the tired silicon layer of high temperature resistant and difficult generation material, therefore can have good operation usefulness.
In sum, the present invention has obvious improvement technically, and has tangible good effect, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Figure 1A to Fig. 1 C illustrates the generalized section of micro electronmechanical resonator in manufacturing process in one embodiment of the invention.
Fig. 2 A to Fig. 2 C illustrates the generalized section of stacked main body in manufacturing process in one embodiment of the invention.
Fig. 3 illustrates the cut-away section schematic diagram into microelectronic device in the another embodiment of the present invention.
10: microelectronic device 100: micro electronmechanical resonator
11: stacked main body 110: treat suspension portion
12: silicon base 120: the erosion dead zone
121: silicon layer 13: insulating barrier
14: metal level 140: tungsten layer
141: 142: the first etched channels of aluminium lamination
1424: the second openings of 1422: the first openings
Etched channels 16 in 144: the second: separation layer
164: the second oxide layers of 162: the first oxide layers
The 200:CMOS circuit
The specific embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, the specific embodiment, structure, feature and the effect thereof of the microelectronic device that foundation the present invention is proposed and the manufacture method of micro electronmechanical resonator thereof, describe in detail as after.
Figure 1A to Fig. 1 C illustrates the generalized section of micro electronmechanical resonator in manufacturing process in one embodiment of the invention.See also shown in Figure 1A, the manufacture method implementing procedure of the micro electronmechanical resonator of present embodiment is to form stacked main body 11 earlier, and it comprises silicon base 12, multiple layer metal layer 14 and separation layer 16, and has the suspension for the treatment of portion 110.Wherein, metal level 14 is formed on the silicon base 12, and for fear of metal level 14 and silicon base 12 mutual short circuits, present embodiment is to be formed with insulating barrier 13 between metal level 14 and silicon base 12, and its material for example is the polysilicon of non-doping.Stacked main body 11 has first etched channels 142, and it is in metal level 14 extends to silicon base 12.16 of separation layers are to fill in first etched channels 142.The metal level 14 that it is pointed out that present embodiment has two first etched channels 142, lay respectively at the both sides for the treatment of suspension portion 110, but the present invention is not defined in this with the quantity of first etched channels 142.
Hold above-mentionedly, these metal levels 14 can comprise tungsten layer 140 and the aluminium lamination 141 that is staggeredly stacked, and the material of separation layer 16 can be silica.Fig. 2 A to Fig. 2 C illustrates the generalized section of stacked main body in manufacturing process in one embodiment of the invention.See also Fig. 2 A, in the present embodiment, the method that forms stacked main body 11 is that silicon base 12 is provided earlier, then on silicon base 12, form insulating barrier 13, and then remove the silicon base 12 and insulating barrier 13 of part, forming first opening 1422, and in first opening 1422, insert first oxide layer 162.
See also Fig. 2 B to Fig. 2 C, on silicon base 12, form multiple layer metal layer 14 in regular turn, and each metal level 14 has second opening 1424 that is filled with second oxide layer 164 and is positioned at first opening, 1422 tops respectively.Wherein, first oxide layer 162 and second oxide layer 164 constitute separation layer 16, the first openings 1422 and constitute first etched channels 142 with a plurality of second openings 1424.
Specifically, present embodiment forms the tungsten layer 140 with second opening 1424 earlier in substrate 12 after forming first oxide layer 162, then fills second oxide layer 164 again in second opening 1424, shown in Fig. 2 B.Wherein, second opening 1424 is positioned at first opening, 1422 tops.Then, on tungsten layer 140, form the aluminium lamination 141 have second opening 1424 equally, second open another second oxide layer 164 of filling 1424 at this again, shown in Fig. 2 C.So repeat above-mentioned steps, can form the multiple layer metal layer 14 shown in Figure 1A and be filled in separation layer 16 in first etched channels 142.Wherein, the first formation method of opening 1422 and second opening 1424 can be the anisotropic etching method.
Specifically, by first etched channels 142 that first opening 1422 and second opening 1424 are constituted, its degree of depth that extends in the silicon base 12 can be decided according to the target capabilities of the micro electronmechanical resonator desiring to make.Specifically, if the micro electronmechanical resonator desiring to make need have high resonant frequency, then can deepen first etched channels 142 and extend to the interior degree of depth of silicon base 12.
See also shown in Figure 1B, after forming stacked main body 11, continue and promptly remove part separation layer 16, expose silicon base 12 to form second etched channels 144, separation layer 16 rest parts then cover the sidewall of first etched channels 142.Specifically, the method that removes part separation layer 16 can be the deep reactive ion etch method (Deep Reactive Ion Etching, DRIE).
What deserves to be mentioned is, in order on the sidewall of first etched channels 142, to stay the separation layer 16 of part, in the process that forms stacked main body 11, the size of second opening 1424 that can control at least one layer of metal level 14 is less than the size of first opening 1422, and one deck metal level 14 protrudes in first opening, 1422 tops and make at least.Thus, when forming second etched channels 144, promptly can remove part separation layer 16 as mask by this metal level 14 that protrudes in first opening, 1422 tops, and then on the sidewall of first etched channels 142, stay part separation layer 16.
Please consult Figure 1A and Fig. 2 C once more, present embodiment for example is the dimension D with second opening 1424 of aluminium lamination 141
2Be designed to dimension D less than first opening 1422 of silicon base 12
1, but the present invention is not limited thereto.In other embodiments, also can be the size of being designed and sized to less than first opening 1422 of silicon base 12 with second opening 1424 of tungsten layer 140.Certainly, the present invention more can be designed to the size of tungsten layer 140 and second opening 1424 of aluminium lamination 141 size less than first opening 1422 in the lump.
In addition, the mask when the present invention does not also limit and with which layer metal level 14 is used as removing part separation layer 16, preamble only is one embodiment of the invention.Haveing the knack of this skill person can adjust according to actual demand voluntarily.
See also Fig. 1 C, separation layer 16 with the sidewall that is covered in first etched channels 142 is a mask, by second etched channels, 144 isotropic etching silicon base 12,, lose dead zone 120 and in silicon base 12, form to remove the part silicon base 12 for the treatment of suspension portion 110 belows.This promptly roughly finishes the micro electronmechanical resonator 100 that is suspended in silicon base 12 tops at least in part.Specifically, the method by second etched channels, 144 isotropic etching silicon base, 12 inside can adopt xenon fluoride (XeF
2) the gas etch method.And; because the sidewall in first etched channels 142 is formed with separation layer 16 as mask; therefore can be protected and can etchedly not remove with separation layer 16 contacted part silicon base 12; thereby when removing the part silicon base for the treatment of below the suspension portion 110 12, part silicon base 12 is retained in the micro electronmechanical resonator 100.
From the above, because silicon materials are lattice structure, but high temperature resistance not only and is difficult for producing the tired problem of machinery, but therefore the bottom be the micro electronmechanical resonator that constitutes by silicon layer 100 its have preferable service behaviour.Wherein, micro electronmechanical resonator 100 for example is radio freqnency resonator (RF Resonator).
Therefore from the above, the present invention makes micro electronmechanical resonator with the CMOS manufacturing process, and micro electronmechanical resonator of the present invention can be produced in the same substrate with cmos circuit, and is follow-up in conjunction with manufacturing technology steps to save.Have the knack of this skill person and understand the present invention more for making, below the structure of microelectronic device of the present invention will be described for embodiment.
Fig. 3 illustrates the cut-away section schematic diagram into microelectronic device in the another embodiment of the present invention.See also Figure 1A and shown in Figure 3, microelectronic device 10 comprises micro electronmechanical resonator 100 and cmos circuit 200.Wherein, cmos circuit 200 for example is to be formed on the silicon base 12 with identical manufacturing process with stacked main body 11.Micro electronmechanical resonator 100 is suspended in 120 tops, erosion dead zone of silicon base 12, and it comprises silicon layer 121, multiple layer metal layer 14 and separation layer 16.Wherein, metal level 14 is made of with aluminium lamination 141 tungsten layer that piles up 140 interlaced with each other, and is disposed at silicon layer 121 tops.In the present embodiment, micro electronmechanical resonator 100 also includes insulating barrier 13, and its material for example is the polysilicon of non-doping, is disposed between metal level 14 and the silicon layer 121, is short-circuited between metal level 14 and the silicon layer 121 avoiding.In addition, separation layer 16 is covered on the sidewall of silicon layer 121.Specifically, the separation layer 16 of present embodiment also covers the sidewall of tungsten layer 140 and insulating barrier 13, and its material for example is a silica.
What deserves to be mentioned is that micro electronmechanical resonator 100 is to be separated by with second etched channels 144 with cmos circuit 200, and the erosion dead zone 120 in the silicon base 12 promptly is to form by 144 etchings of second etched channels.In other words, second etched channels 144 is to be connected with the erosion dead zone 120 of silicon base 12 inside.
This shows that the manufacture method of above-mentioned micro electronmechanical resonator 100 can be integrated mutually with the manufacture process of cmos circuit 200.In other words, micro electronmechanical resonator 100 can be formed on the same silicon base 12 jointly with cmos circuit 200, so that carry out the part manufacturing process of micro electronmechanical resonator 100 simultaneously in the process of making cmos circuit 200.Thus, can reduce its production cost by the manufacturing process of simplifying microelectronic device 10.
In sum; in the manufacture method of the micro electronmechanical resonator of the present invention; be to protect silicon base at the sidewall formation separation layer of first etched channels earlier, so that the contacted part of silicon base and separation layer can be protected and can not be removed in the etching process that forms the erosion dead zone.Thus, after the etching manufacturing process of silicon base, formed micro electronmechanical resonator still can be possessed the silicon layer of part in the bottom, and has preferable service behaviour.
In addition, the manufacture method of micro electronmechanical resonator of the present invention also can be integrated mutually with the manufacture process of cmos circuit, so that in same substrate, finish the manufacturing process of the microelectronic device that comprises micro electronmechanical resonator and cmos circuit, and then reduce the production cost of microelectronic device.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (12)
1. the manufacture method of a micro electronmechanical resonator is characterized in that it comprises the following steps:
Form a stacked main body, it comprises a silicon base, multiple layer metal layer and at least one separation layer, wherein those metal levels are formed at this silicon base top, and this stacked main body has at least one first etched channels in those metal levels extend to this silicon base, this separation layer is to fill in this first etched channels, and this stacked main body has the suspension for the treatment of portion;
Remove this separation layer of part, expose this silicon base to form one second etched channels, and this separation layer rest parts to small part covers the sidewall of this first etched channels; And
This separation layer with the sidewall that is covered in this first etched channels is a mask, by this this silicon base of second etched channels isotropic etching, waits this silicon base of part of subordinate side that suspends to remove this, and form an erosion dead zone in this silicon base.
2. the manufacture method of micro electronmechanical resonator according to claim 1, the method that it is characterized in that wherein forming this first etched channels is an anisotropic etching, and the method that removes this separation layer of part is the deep reactive ion etch method.
3. the manufacture method of micro electronmechanical resonator according to claim 1 is characterized in that wherein that method by this this silicon base inside of second etched channels isotropic etching comprises to adopt the xenon fluoride gas etch.
4. the manufacture method of micro electronmechanical resonator according to claim 1 is characterized in that the method that wherein forms this stacked main body comprises:
This silicon base is provided;
On this silicon base, form the polysilicon insulation layer of a non-doping;
Remove this insulating barrier of part and this silicon base of part, to form at least one first opening;
In this first opening, insert one first oxide layer; And
On this insulating barrier, form those metal levels in regular turn, and each those metal level has at least one second opening that is filled with one second oxide layer respectively, be positioned at this first opening top, wherein this first oxide layer and those second oxide layers constitute this separation layer, this first opening and those second openings constitute this first etched channels, and one of them is less than this first opening at least for those second openings, and one of them protrudes in this first opening top at least and make those metal levels.
5. the manufacture method of micro electronmechanical resonator according to claim 4 is characterized in that wherein being to remove this separation layer of part as mask with this metal level that protrudes in this first opening top in the manufacturing process that forms this second etched channels.
6. the manufacture method of micro electronmechanical resonator according to claim 1 is characterized in that wherein those metal levels comprise aluminium lamination and tungsten layer, and the material of this separation layer is a silica.
7. the manufacture method of micro electronmechanical resonator according to claim 1 is characterized in that wherein first etched channels of this stacked main body is a plurality of, lays respectively at the both sides that this treats suspension portion.
8. microelectronic device is characterized in that it comprises:
One silicon base has an erosion dead zone;
One cmos circuit is formed on this silicon base; And
One micro electronmechanical resonator, be suspended at least in part top, this erosion dead zone and with this cmos circuit at least one second etched channels of being separated by, wherein this second etched channels is communicated with this erosion dead zone, this micro electronmechanical resonator comprises:
One silicon layer;
The multiple layer metal layer is disposed at this silicon layer top; And
One separation layer is covered on the sidewall of this silicon layer at least in part.
9. microelectronic device according to claim 8 is characterized in that this micro electronmechanical resonator wherein more comprises the polysilicon insulation layer of a non-doping, is disposed between this silicon layer and those metal levels.
10. microelectronic device according to claim 8 is characterized in that wherein those metal levels comprise a plurality of the first metal layers and a plurality of second metal level, and those the first metal layers and those second metal levels this silicon layer top that is stacked in interlaced with each other.
11. microelectronic device according to claim 10 it is characterized in that wherein the material of those the first metal layers is a tungsten, and the material of those second metal levels is an aluminium.
12. microelectronic device according to claim 8 is characterized in that wherein the material of this separation layer is a silica.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103569937A (en) * | 2012-08-09 | 2014-02-12 | 台湾积体电路制造股份有限公司 | MEMS device and method for forming the same |
| CN105229923A (en) * | 2013-05-20 | 2016-01-06 | 株式会社村田制作所 | The micro-electromechanical resonator improved |
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| ATE269588T1 (en) * | 1993-02-04 | 2004-07-15 | Cornell Res Foundation Inc | MICROSTRUCTURES AND SINGLE MASK, SINGLE CRYSTAL PRODUCTION PROCESS |
| US6180536B1 (en) * | 1998-06-04 | 2001-01-30 | Cornell Research Foundation, Inc. | Suspended moving channels and channel actuators for microfluidic applications and method for making |
| TW587059B (en) * | 2002-06-07 | 2004-05-11 | Ind Tech Res Inst | Manufacturing method of micro mechanical floating structure |
| CN1569609A (en) * | 2003-07-22 | 2005-01-26 | 陞达科技股份有限公司 | Method for producing microstructure using tellite |
| CN101447775B (en) * | 2007-11-28 | 2011-07-20 | 中国科学院半导体研究所 | Polycrystalline cubic-phase silicon carbide micro-electro-mechanical system resonant device and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103569937A (en) * | 2012-08-09 | 2014-02-12 | 台湾积体电路制造股份有限公司 | MEMS device and method for forming the same |
| CN103569937B (en) * | 2012-08-09 | 2016-03-23 | 台湾积体电路制造股份有限公司 | MEMS and MEMS formation method |
| CN105229923A (en) * | 2013-05-20 | 2016-01-06 | 株式会社村田制作所 | The micro-electromechanical resonator improved |
| CN105229923B (en) * | 2013-05-20 | 2018-01-26 | 株式会社村田制作所 | Improved micro-electromechanical resonator |
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