CN102007606A - Solar cell module - Google Patents

Solar cell module Download PDF

Info

Publication number
CN102007606A
CN102007606A CN200980113096XA CN200980113096A CN102007606A CN 102007606 A CN102007606 A CN 102007606A CN 200980113096X A CN200980113096X A CN 200980113096XA CN 200980113096 A CN200980113096 A CN 200980113096A CN 102007606 A CN102007606 A CN 102007606A
Authority
CN
China
Prior art keywords
solar module
aforementioned
module
carrier structure
sca
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200980113096XA
Other languages
Chinese (zh)
Inventor
约阿希姆·尧斯
安得烈斯·贝特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of CN102007606A publication Critical patent/CN102007606A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention relates to a solar cell module comprising at least two interconnected assemblies (SCA) having solar cells and a bottom plate for a module comprising an electrically conductive carrier structure and an electrically insulated backing plate on at least the side facing the carrier structure. The assembly comprising the solar cell is constructed particularly small, thus having a low material usage of cooling body material, for example copper or aluminum, and thus allowing particularly cost effective production.

Description

Solar module
The present invention relates to a kind of solar module, it comprises at least two assemblies (SCA) that are connected to each other and have solar cell, and also comprise the module base plate, this module base plate comprises conductive bracket structure and backplate, and this backplate is being an electric insulation on a side of carrier structure at least.Therefore, with respect to demarcating size, comprised solar cell components miniaturization especially, this can cause the low material consumption of heat sink material (for example copper and aluminium), and therefore is particularly suitable for economical production.
In order directly to obtain electric energy from sunlight, current optical-electric module generalizes.In the art, a kind of promising especially in the near future technology is the optical collector photoelectrical device, solar energy is concentrated by optical system in this device, and be converted into electric energy (for example referring to A.W.Bett by high performance especially solar cell subsequently, F.Dimroth, people's such as S.W.Glunz " FLATCON TMAnd FLASHCON TMConcepts for High Concentration PV ", Proc.of 19 ThEuropean Photovoltaic Solar Energy Conference, 2004, pp.2488-2491).
The concentrated generation of sunlight has the focus of high relatively radiation density.This radiant energy is converted to electric energy with certain proportion in solar cell.This ratio depends on the efficient of solar cell, this efficient quickly promotes in the past few years, and surpassed 40% now (for example referring to R.R.King, D.C.Law, people's such as K.M.Edmondson " 40%efficient metamorphic GaInP/GaInAs/Ge multijunction solar cells ", Applied Physics Letters, 90,2007, pp.1835161-1835163).
The a part of radiant energy that does not get transformed into electric energy rolls up the heat waste anergy.Because therefore high radiation density causes the thermodynamic Design of concentrator module is proposed extra high requirement.Because the efficient of solar cell and life-span all reduce under higher temperature, so every kind of improvement in this area all is devoted to keep the temperature of solar cell low as far as possible by suitable mode.
Because the high flow capacity density of heat energy in the optical collector photoelectrical system need be connected to solar cell on active or the passive cooling radiator.In order to keep the low-cost especially of this concentrator module, the particularly importantly appropriate combination of control material and the design that is suitable for large-scale production.Except thermal energy consumption, each solar cell must be electrically connected to each other in the concentrator solar energy module.In order to keep lowly along with the resistance loss that current strength is quadratic power and increases as much as possible, employing is with all solar cells series connection or even with a plurality of solar battery group parallel connections usually.
Up to the present, radiator can only be designed to single part usually, and has relative size, just so-called SCA (solar module).Each solar cell has also contacted and has been positioned on this cooling element, and makes contact region can further connect on module level.According to a kind of typical solar module of the present art (documentary evidence: J.Jaus for example, U.Fleischfresser, people's such as G.Peharz " Heat Sink Substrates for Automated Assembly of Concentrator Modules ", Proc.of 21 StEuropean Photovoltaic Solar Energy Conference, 2006, pp.2120-2123 or A.W.Bett, C.Baur, people's such as F.Dimroth " FLATCON TMModules:Technology and Characterisation ", Proc.of 3 RdWorld Conference on Photovoltaic Energy Conversion, 2003, pp.634-637 or US 5,167,724) by solar cell, be used for heat conduction substrate (for example copper), be used to improve a plurality of added metal layers of contact, the layer that is used for the contact solar cell back side or adhesive layer, and the binding site of solar cell upside or solder joint constitute.
Two electrodes of solar cell are electrically connected metal level in a plurality of metal levels respectively.For this reason, the b contact of the planar design of solar cell is connected to the first metal layer with planar fashion.The front contact of solar cell is connected to second metal level.Because the active surface of solar cell is positioned at the position of next-door neighbour's front contact on the front of solar cell, so compare with active surface, front contact decision design gets very little, so that can utilize the radiation sunlight that electric current generates that is used for as much as possible.Therefore, the connection of front contact is usually by the very joint line realization of thin (about 50 μ m).Except that being electrically connected, SCA is also undertaking the task of the accumulation used heat that dissipates.This function of radiator at first comprises heat energy is conducted to each metal level (especially by the plane b contact to thereon metal level of connection) of SCA from solar cell, and also heat conducted to the module back side.On the other hand, " heat release " is necessary, the heat distribution on the promptly big zone.This is necessary especially in high condenser system, because this system has higher relatively radiation density, and therefore also has higher heat density.Under the present art, each solar module all is installed on the module base plate.This module base plate is emitted to external environment with heat energy.Each SCA is installed on this module base plate, so that solar cell as far as possible accurately is positioned at the focus place focus place of another optical system that is used to focus on solar radiation (or be positioned at) of the lens board that is installed in their top.After being installed to SCA on the base plate, carry out SCA electric wiring each other.According to required module voltage, series connection and the parallel connection use that can be bonded to each other.Be used for that the base plate of this purpose must be designed to insulate, otherwise the installation of SCA will cause all SCA of a module all to be connected in parallel, this will cause extra high electric current to produce, and this is not desired, because can produce ohmic loss thus.
Manufacturing for according to the module base plate of the use solar module of prior art has following shortcoming:
Solar module needs relatively large area to scatter the heat that gathers in the solar cell.For reaching this purpose, copper is the base material of the most frequent use, and this is because its good thermal conductivity.But because the copper price is high, so cause very high material cost.
Can not be directly bonding or be welded on the copper in the back side of solar cell.For this reason, also need the additional metals layer.Nickel as diffusion impervious layer is the combination of using always succeeded by thin gold layer.Because big plane ductility, the required stream galvanic process step of this purpose can cause high material and technology cost.Because the use of mask, so in fact these contacting metals only can apply in its desired position, but the whole surf zone of SCA still needs to be guided through the electric equipment of stream, and this thus technology has increased the technology cost.
For solar cell is installed on the radiator, and also for the contact solar cell front, the device that has used microelectronics to make.These devices specifically are designed under high speed contacts integrated circuit.Because so the relatively large surf zone of solar module in practice, has significantly reduced the output of these devices.For corresponding device thereof, processing speed has no longer influenced produces the amount of telling, but the speed that the SCA shift-in shifts out.
According to prior art, the baseboard material glass of having used till today is actually a kind of very economical material, but its coefficient of heat conduction relatively low (＜2W/mK).So the exothermal effect of the heat release function that base plate can be undertaken is very poor, and it only conducts to outside air with heat from the SCA with large tracts of land design.
Because above-described solar cell according to prior art is directly installed on the copper surface with rear side contact, so the solar cell upper surface must contact on the second electric insulation surface.For this reason, solar module itself must adopt multilayer technique design (J.Jaus, U.Fleischfresser, people's such as G.Peharz " Heat Sink Substrates for Automated Assembly of Concentrator Modules ", Proc.of 21 StEuropean Photovoltaic Solar Energy Conference, 2006, pp.2120-2123) or its must have contact pad designed.And above-mentioned both can additionally increase material and technology cost.
And according to prior art, the embodiment that base plate itself has a plurality of metal levels also is known (US6248949B1 and WO91/20097).These metal levels are directly connected to the front or the back side of solar cell respectively.These base plates design by circuit board technology usually, and wherein a plurality of conductions (for example Cu) and non-conductive (for example glass-epoxy) metal level are connected to each other by laminated.In order to form series connection, these layers therefore by the photolithographic structures metallization processes by structuring, and therefore form the zone that is electrically insulated from each other and by solar cell they be connected to each other subsequently.
According to prior art, the manufacturing for the module base plate that utilizes multilayer technique has following shortcoming:
The metal level of different-thickness can be used as conductive layer, uses the copper of 0.035 to 0.5mm thickness usually.Typically, one of them layer has thicker design (＞200 μ m), so that realize heat release.Yet not every solar cell can both directly be placed on this heat conduction layer, because will cause the parallel connection of all these batteries like this, negative results as described is such.Therefore, solar cell must be installed on the conductive layer that need not to insulate with this main heat conduction layer.Usually in the prior art, the glass fabric that soaks into of epoxy resin is as insulating material (for example FR4).Nearly all commercially available circuit board is all based on this material.Even this layer can be designed to be extremely thin (＜100 μ m) by advanced person's multilayer technique, yet because the low heat conduction coefficient of FR4 (＜1W/mK), so can produce very high thermal resistance.
The influence of this high thermal resistance is big especially, because the used heat is not here shed, promptly produces high hot-fluid on very little cross-sectional area.According to the equation of heat conduction of Fourier, these two factors cause undesirable high battery temperature.
In order to form series connection, at least one conductive layer must promptly be divided into a plurality of independently electric insulations zone by structuring.For this reason, use the photolithographic structures method according to prior art.For this reason, at the exposure of corresponding position, development photomask and etching copper.This technology is relatively costly, particularly must implement on the whole surface at the module base plate owing to it.
From then on begin, the object of the present invention is to provide a kind of solar module, its above-mentioned shortcoming of eliminating prior art also can be simple and manufactured economically.
The solar module of the feature of this purpose by having claim 1 and the concentrating solar battery module with feature of claim 19 realize.Other dependent claims have then disclosed favourable improvement.
According to the present invention, a kind of solar energy module is provided, it has at least two solar cell components that are connected to each other and have (SCA), and also has and comprised the conductive bracket structure and with respect to the module base plate of the back side base plate of carrier structure electric insulation.Therefore, this carrier structure has the zone (SCA zone) that is isolated from each other and has assembled solar module, and also has a join domain, and the front of the connection of solar module by SCA zone and adjacent solar battery electrically contact realization, and, or pass through the SCA zone and realize as parallel circuits each other with join domain each other also by the realization that electrically contacts of SCA zone and adjacent join domain as series circuit.
To undertake electrically contacting and dispelling the heat of task opposite with SCA in the prior art, and the present invention is with these functional separations.SCA undertake solar cell above-mentioned all electrically contact task, and several millimeters the first heat radiation task of key area around the battery.Therefore, SCA can significantly reduce.Therefore because two-stage radiation, so the surface area of carrier structure usually less than half of whole solar cell module surface, even only is 1/4th of solar module surface sometimes.According to the present invention, make actual heat radiation be covered with surf zone as far as possible by programmable backplate, because it is connected with the SCA electric insulation, for example therefore paillon foil does not also have structure complexity continuously.Therefore two-stage radiation has following meaning: at first, first heat radiation realizes by the SCA zone effectively, and then second heat radiation realizes by backplate.
According to the present invention, be electrically connected the surface and can realize by above-mentioned zone with separating of heat-delivery surface.Therefore, according to the present invention, realized related electrical connection function by carrier structure.
Preferably, carrier structure is all-in-one-piece, and the separation in zone realizes by punching press.
Carrier structure can be carrier band or or even support plate.Preferably, it is made of the metal strip material, and this strip material has 0.1-5mm, particularly the thickness in the 0.2-0.5mm scope.Simultaneously, carrier structure should have Gao Re and electrical conductivity.For this reason, the copper particularly suitable that has low-alloy ratio iron or nickel.Then for example come this carrier structure of structuring by punching press isolated area (it all passes through connecting plate (so-called punching press bridge) at first and is connected to each other).Subsequently, make thus in the SCA zone that solar cell is installed on it.In addition, form as the join domain that connects platform subsequently.Alternatively, also may form the 3rd zone, it has auxiliary element, the mask of for example boring a hole, and it is used for deciding bonding jumper in the processing unit acceptance of the bid.
In a preferred embodiment, in order to promote electrically contacting property, can be equipped with other metal levels in the zone in desired location on the whole surface of carrier structure or only.These metal levels are subsequently for example as diffusion impervious layer, for example nickel, palladium or silver or as oxidation barrier layer, for example gold.
Preferably, solar cell is connected to carrier structure by electroconductive binder or by the scolder in the contact of the back side, plane in the SCA zone.The contact of the front of solar cell can be then be connected to the join domain of carrier structure by electrically contacting (for example engaging by fine rule).Subsequently, the solar cell package that for example will install thus and contact by Shooting Technique.Simultaneously, SCA zone and join domain pass through this step mechanical connection each other.If omit this injection step, then also replacedly by fixed band or glue or welding auxiliary element realization mechanical connection.
Subsequently, to SCA connected to one another carried out punching press with join domain in the zone and separated the punching press bridge by casting this moment.The SCA of the separation that forms after this step (if desired) now can carry out extra quality examination, is for example undertaken by the measurement features line, and then prepares thus to be installed on the backplate.
Another replaceable mode is a join domain, promptly connects platform, also can be formed on the carrier structure of separation, for example on the bonding jumper.In this case, at first omit the contact of solar cell upside.Then only the SCA zone is installed on the plate overleaf and join domain carries out afterwards.
Preferably (k＞0.1 to 5mm thickness 50W/mK), the sheet metal of preferred especially 0.2-0.5mm thickness constitute backplate by having thermal conductive resin.Preferably, backplate is made of aluminium alloy.
SCA is installed in by the electroconductive binder that readily conducts heat on the aluminium sheet that has been equipped with anodization layer, and this electroconductive binder has 0.2-50W/mK, especially the pyroconductivity in preferred＞1.5W/mK scope.Electrical connection between the two realizes by the electrical connection between SCA zone and the join domain.In order to realize series connection, the element in SCA zone alternately is connected to join domain.
Pei Zhi module base plate preferably is connected to lens board by frame structure by this way, thereby forms the finished product module.Except using frame structure, also can pass through reshaping, for example deep draw (deep drawing) forms backplate or is used for the underboarding that mechanically stable is handled.In this mode, backplate or underboarding can have the function of framework simultaneously, and directly lens board are connected to this plate subsequently.If the saving material, then preferably use thin backplate, then can apply it to by the mechanically stable material, for example steel, plastics, glass, glass fiber compound material are on the underboarding of making.
Below will enumerate the preferred embodiment of theme of the present invention.
The manufacturing of backplate can be major part or also can realize by multiple element with a kind of element (the anodization aluminium sheet that for example 2mm is thick).Possible herein is, above-mentioned all manufacturings all realize by the metal forming of relative thin, it is preferably made by the thick aluminium of about 100 to 300 μ m, it can provide with insulating barrier in rolling rolling technology economically, for example by the auxiliary coating processes of the plasma of anode anodizing of aluminium, hydatogenesis oxide layer, inorganic compound, insulation paper tinsel gluing/laminated or by roll-type brushing or spraying coating process.
Then this paper tinsel is pressed on the stable frame structure, for example constitutes by the twofold bonding jumper.Replacedly, can be by being laminated in the carrying substrate of mechanically stable, for example galvanized steel, glass, fibrous composite, duplexer or aluminium, on realize self supporting structure.
Base plate advantageously is fabricated to self-supporting sheet metal structure.Given this, this means that necessary mechanical stability does not resemble only to realize the prior art, and also realize by suitable configuration backplate by material thickness.This for example can fold, crumple and make by glass dust moulding, reinforcement.
If want to make module to have gas-tight design, then the module base plate advantageously has effective modulus of elasticity, and it is 0.1 to 2 times of lens board, is preferably 0.2 to 0.8 times especially.This can be for example realizes by the selection and the suitable thickness of the material of backplate.Therefore, more be to be reduced in the pressure that the particular module temperature is issued in the inside modules by base plate rather than lens board.So base plate has the function of pressure membrane.So, can reduce the distortion of lens board, just so-called point breaks away from, and promptly can avoid focus to remove from active battery surface.
In order to promote the pressure membrane function, the module base plate has special area for this reason, and this zone is positioned at the module edge zone, and wherein elasticity is enhanced.This can be by reducing material thickness or advantageously realizing by specific formation, for example twofold.
To accumulate in the used heat in the solar cell in order dissipating and also it to be distributed to bigger surface area and to use multiple material.These materials of Xuan Zeing make coefficient of heat conduction k the highest in the material of use near next-door neighbour's solar cell thus.Because still very high flux density, therefore the use of the conductive material of heat conduction seems particularly important especially easily.Along with the increase of conductive cross-section, pyroconductivity can descend, and does not cause accumulation of heat.Compare as radiator with homogenous material/element in the prior art, can realize that thus material uses or the significantly reduction of material cost.
The following combination of materials of base plate constructed in accordance can be listed by following example:
A. the SCA zone of carrier structure: copper alloy, thermal conductivity～380W/mK;
B. anodization aluminium sheet: aluminium alloy, thermal conductivity～210W/mK;
C. galvanized steel support plate: steel alloy, thermal conductivity～40W/mK.
Connect material using between solar cell and the element that is used to dispel the heat or between each element that is being used to dispel the heat, this connections material also basis " classification thermal transmission coefficient " principle is selected.So the connection material of conduction especially easily (and also being expensive usually therefore) can be limited to minimum zone.List following classification by example:
A. being connected of the SCA zone of solar cell and carrier structure: silver-colored filled conductive adhesive with k～5W/mK;
B. being connected of the SCA of carrier structure zone and anodization aluminium sheet: epoxy resin with aluminium hydroxide filling of k～1.5W/mK;
C. being connected of anodization aluminium sheet and mechanical support plate: unfilled epoxy resin with k～0.2W/mK.
Be similar to classification heat conduction, owing to have different thermal expansions, so select the material of minimum stress according to classification thermal coefficient of expansion (CTE-thermal coefficient of expansion) as far as possible:
A. the silicon or the germanium that have the CTE of 2.6ppm/ ° of K or 5.8ppm/ ° of K are used as solar cell substrate;
B. this substrate is installed on the carrier structure that is made of copper, and the CTE of copper is 16.7ppm/ ° of K;
C. the anodization aluminium sheet has the CTE of 23ppm/ ° of K.
Two different layers that are electrically insulated from each other are opposite with using in the prior art, and under the situation of theme of the present invention, two electricity zones (SCA zone and join domain) all are formed on the carrier structure.Owing to adopting suitable casting technique/stamping technology and going back backplate, so required series connection can realize in very simple mode because use is insulated.
In the configuration of the SCA of carrier structure zone and join domain, have interactional two aspects: short as far as possible for the length that guarantees joint line, join domain is answered as close as possible SCA zone.But this radiant heat that has weakened battery dissipates, because SCA zone and join domain can not be connected to each other by bar surface after punching press again.Therefore, join domain advantageously generates tongue, and it protrudes in the SCA zone slightly.For the optimal trade-off between combined leads length and the thermal conduction limitations, with respect to the minimum interval of battery surface should 1 and 10mm between (preferably 2 and 5mm between).
Backplate can have double insulation.For reach high system voltage (in present system～800V), must guarantee good insulation performance.In order to ensure necessary safe insulation, backplate has double insulation:
A.1.SCA the insulation of direction (inner insulating layer);
B.2. the insulation (external insulation layer) of the extraneous air or the second backplate direction.
Can realize the dual manufacturing of insulating barrier by using aluminium very economically, by all carry out anode oxidation process on all faces, the aluminium near surperficial zone that makes in acidic electrolyte bath is bathed transforms (electroxidation), thereby forms aluminium oxide.
Other insulating barrier can be formed on the SCA direction by nonconductive adhesive.This can advantageously realize by applied corresponding layer before separating.After coating had just been finished, this layer had been that part is prepolymerized, so that it at room temperature no longer has viscosity.In joint technology, this layer then formed the solid connection through polymerization and between the carrier structure of SCA and backplate fully.
Insulation possibility in addition is present on the direction of reinforcing line base plate by means of non-conductive adhesive, and also is present on the module back side by the electric insulation dipping varnish.
(" wafer joint ") all is installed on the SCA zone and after the end of the wire bond technology of join domain at solar cell and protection diode, may be needed to encapsulate these semiconductor chips and wire bond and connect.So, realized to the protection of contact and to the protection of the solar battery edge moisture-resistant gas corrosion of sensitization.If select opaque encapsulating material, then the active region with solar cell exposes.Distribute (dispensing) and injection moulding all to be considered to casting process.
Under suitably transparent encapsulating material (absorptivity of 400-2000 mum wavelength＜20%) situation, so-called secondary lens combination advantageously is formed directly into battery top during injection molding technique, and it influences the light path of sunlight, so that form higher average radiation flow on the solar cell.This for example scioptics formation or realize based on the formation of the funnel of internal reflection.
Nontransparent encapsulation advantageously has as the structure that reflection secondary lens combination is installed, and for example is used for the clasp of flush mounting.
What play a decisive role for low battery temperature is that heat is effectively outputed to external environment.Therefore, thermal-radiating ratio is relatively large.Therefore theme of the present invention advantageously has following element:
A. the top of plate has the layer that the high emission in the 2000-10000 mu m range is held overleaf.For this reason, advantageously use anodized aluminum, because the high emission that the anodization aluminium lamination has automatically had in this scope is held.Because the emission of the high IR on the top of backplate is held, so increased radiation towards lens board.As a result, lens board is expanded manyly, and this should be considered to positive, because the base plate expansion is also higher relatively.In addition, lens board can shift so produce higher net radiation to space radiation, and it is greater than the situation of module base plate and surrounding environment exchange radiation.
B. the layer (for example varnish, paper tinsel) that holds of the high emission in the bottom of base plate has the 2000-10000 mu m range.If aluminium is as the material on the back side, then anodization layer also can be advantageously used in this purpose.
In order to increase the infrared emission capacity that partly is present in the base material, also can use coating and lacquer.Advantageously, can use by SiO 2The thin layer of making or also can use the coating of greasepaint.
Be used for solar cell is connected to the layer in SCA zone of carrier structure advantageously by based on SnPb, SnAg, AnAgCu or by based on epoxy resin, organic siliconresin or have silver or the electroconductive binder of the thermoplastics of copper based filler is made.
The layer that is used for solar module is connected to backplate is advantageously made by epoxy resin, acrylate, polyimide film, organic siliconresin adhesive or thermoplastics with aluminium oxide, aluminium hydroxide or boron oxide, aluminium nitride, boron nitride filler.
As replaceable example, the non-conductive plastic coat form of partial cross-linked epoxy resin or other partly solidified adhesives (also with) also can be applicable on the back side of lead frame.This layer at room temperature exists with the form of film, and at first is connected to the back side of lead frame.So each zone of carrier structure all keeps together in punching course.After the punching press, then SCA is fixedly attached to base plate by this layer.This layer also undertaken the task of electric insulation.
Be used for electrically contacting of solar module that internal module connects advantageously by following technology manufacturing:
A. the ultrasonic thick line that has aluminum steel;
B. have the thermocompression bonding of copper;
The welding procedure of b.Cu or Al bar or line;
D. only contact by adhesive.
By the adhesive contact, the net that will comprise metallic strip conductors is applied on the insulating barrier of backplate for only, for example by deep draw, silk screen printing or spray technology.
Can increase the net of this strip conductor, so that improve conduction of current by stream electricity or no current technology.
Advantageously, the appropriate members that is used for engaging (for example perforation, screw thread inserts) and other Connection Elements, connector box, installation elements are integrated in base plate.
Explain in more detail according to theme of the present invention with reference to subsequent drawings, but be not intended to described theme is defined in specific embodiment as herein described.
Fig. 1 illustrate the front view that the present invention has the solar module of filling synthetic (Fig. 1 a), perspective view (Fig. 1 b) and sectional view (Fig. 1 c).Carrier structure herein has zone 1, and this zone is equipped with solar module, and join domain 2, and spatially separate each other at least in part in above-mentioned two zones.On SCA zone 1, connect solar cell 3 by electroconductive binder or scolder.And protection diode 6 is arranged on the SCA zone 1 by electroconductive binder or scolder.Solar cell 3 and protection diode 6 are connected to each other in conjunction with 7 by (for example) fine rule.In Fig. 1, this solar module is sealed in the filler 9.
Among Fig. 2, illustrate solar module of the present invention front view (Fig. 2 a), perspective view (Fig. 2 b) and sectional view (Fig. 2 c).Important difference is there is not filler.Among this figure, Reference numeral is all identical with Reference numeral among Fig. 1, and in the figure, can be detected solar battery front side by fine rule in conjunction with 8 contact.
Among Fig. 3, the connection of six solar cells of the present invention is shown by the mode of example.
Fig. 4 illustrate have SCA zone 1, join domain 2 and chip bearing bar with the 3rd zone of auxiliary element (for example being used for perforation mask) at processing unit index bonding jumper.
Fig. 5 illustrates the assembling of solar module of the present invention.Backplate 12 for example made of aluminum has the insulating barrier of for example being made by the anodization aluminium lamination 13 from the teeth outwards.This backplate for example by painted steel sheet, is connected to second backplate by connecting material 14.This second backplate can have other function element, for example strengthens crimping stitch 11 and 11 '.SCA 17 is connected to backplate by link 16.

Claims (20)

1. solar module, it comprises at least two solar cell components that are connected to each other and have (SCA), and the module base plate, described module base plate comprises the conductive bracket structure and with respect to the backplate of described carrier structure electric insulation;
Described carrier structure has the also a plurality of zones (SCA zone) of assembling solar battery assembly that are isolated from each other, and also have a plurality of join domains, and the front of the connection of described solar module by described SCA zone and adjacent solar battery electrically contact realization, also by described SCA zone respectively with the electrically contact realization of adjacent join domain as series circuit, or realize as parallel circuits each other with described join domain each other by described SCA.
2. solar module according to claim 1 is characterised in that, described carrier structure is all-in-one-piece, and the separation in zone realizes by punching press.
3. according to each described solar module in the aforementioned claim, be characterised in that described being connected on the described carrier structure is connected on the described carrier structure by adhesive or scolder solar cell integratedly especially.
4. according to each described solar module in the aforementioned claim, be characterised in that described carrier structure is carrier band or support plate.
5. according to each described solar module in the aforementioned claim, be characterised in that, described carrier structure by have＞metal or metal alloy of the thermal conductivity of 50W/mK constitutes, made by copper, copper-iron alloy or corronil especially.
6. according to each described solar module in the aforementioned claim, be characterised in that described carrier structure has 0.1-5mm, particularly the thickness in the 0.2-0.5mm scope.
7. according to each described solar module in the aforementioned claim, be characterised in that, in order to improve electrical contact performance, described carrier structure has at least one other metal coating at least in the zone, particularly preferably by nickel, palladium or the silver-colored diffusion impervious layer of making, the oxidation barrier layer that perhaps preferably is made of gold.
8. according to each described solar module in the aforementioned claim, be characterised in that described backplate has the thickness of 50-500 μ m.
9. according to each described solar module in the aforementioned claim, be characterised in that, described backplate by have 〉=metal or metal alloy of the thermal conductivity of 50W/mK constitutes, is made of aluminium alloy especially.
10. according to each described solar module in the aforementioned claim, be characterised in that two-stage radiation dispels the heat by first heat radiation in described SCA zone with by second of described backplate and realizes.
11., be characterised in that electric insulation layer, the particularly insulating barrier of being made by aluminium oxide are arranged between carrier structure and the backplate, as the electric insulation layer of carrier structure and backplate according to each described solar module in the aforementioned claim.
12. according to each described solar module in the aforementioned claim, be characterised in that described backplate is also connected to underboarding, this underboarding is made by the steel that is used for mechanically stable, plastics, glass and/or glass fiber compound material especially.
13. according to each described solar module in the aforementioned claim, be characterised in that, described electrically contact be combined leads.
14. according to each described solar module in the aforementioned claim, be characterised in that, described solar module has other mechanical fixed parts that are used for described carrier structure, is the auxiliary element of injection mould encapsulation, fixed band and/or complete connection especially.
15. according to each described solar module in the aforementioned claim; be characterised in that; described solar module also has at least one and is used for electric current is conducted the protection diode that from the barrier layer direction of described solar cell, and described protection diode preferably is arranged on the first area of described carrier structure.
16. solar module according to claim 15 is characterised in that, described protection diode electrically contacts with adjacent solar battery respectively on the front.
17., be characterised in that described solar module possesses lumarith according to each described solar module in the aforementioned claim.
18., be characterised in that solar cell is whole polynary solar cell according to each described solar module in the aforementioned claim, be the ternary solar cell especially, the element by III in the periodic table and V main group constitutes especially.
19. the concentrating solar battery module, it comprises according to each described solar module in the aforementioned claim and the optics that is used to assemble solar energy.
20. concentrating solar battery module according to claim 19 is characterised in that, described optics is single-stage or two-stage condensing lens system.
CN200980113096XA 2008-04-15 2009-04-09 Solar cell module Pending CN102007606A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08007395.0 2008-04-15
EP08007395A EP2110863A1 (en) 2008-04-15 2008-04-15 Solar cell module
PCT/EP2009/002653 WO2009143931A2 (en) 2008-04-15 2009-04-09 Solar cell module

Publications (1)

Publication Number Publication Date
CN102007606A true CN102007606A (en) 2011-04-06

Family

ID=39831930

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980113096XA Pending CN102007606A (en) 2008-04-15 2009-04-09 Solar cell module

Country Status (6)

Country Link
US (1) US20110048501A1 (en)
EP (2) EP2110863A1 (en)
KR (1) KR20100136520A (en)
CN (1) CN102007606A (en)
ES (1) ES2661769T3 (en)
WO (1) WO2009143931A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104303319A (en) * 2011-11-25 2015-01-21 Soitec公司 Method for preventing an electrical shortage in a semiconductor layer stack, thin substrate cpv cell, and solar cell assembly

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5242499B2 (en) * 2009-05-25 2013-07-24 シャープ株式会社 SOLAR CELL MODULE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE MOUNTED WITH THE SOLAR CELL MODULE
EP2362432B1 (en) * 2010-02-25 2017-06-07 Saint-Augustin Canada Electric Inc. Solar cell assembly
EP2362431B1 (en) * 2010-02-25 2018-01-10 Saint-Augustin Canada Electric Inc. Solar cell assembly
EP2375455B1 (en) * 2010-04-09 2019-01-09 Saint-Augustin Canada Electric Inc. Voltage matched multijunction solar cell
JP5645774B2 (en) * 2011-08-19 2014-12-24 京セラ株式会社 Solar cell module
JPWO2013031752A1 (en) * 2011-08-30 2015-03-23 東レ株式会社 Method for manufacturing solar cell module, solar cell back surface sealing sheet, and solar cell module
US9947820B2 (en) 2014-05-27 2018-04-17 Sunpower Corporation Shingled solar cell panel employing hidden taps
US10090430B2 (en) 2014-05-27 2018-10-02 Sunpower Corporation System for manufacturing a shingled solar cell module
USD933584S1 (en) 2012-11-08 2021-10-19 Sunpower Corporation Solar panel
US9780253B2 (en) 2014-05-27 2017-10-03 Sunpower Corporation Shingled solar cell module
USD1009775S1 (en) 2014-10-15 2024-01-02 Maxeon Solar Pte. Ltd. Solar panel
US20140124014A1 (en) 2012-11-08 2014-05-08 Cogenra Solar, Inc. High efficiency configuration for solar cell string
FR3001832B1 (en) * 2013-02-06 2015-02-20 Arkema France USE OF A POLYMERIC FLUID COMPOSITION FOR ENCAPSULATION OF PHOTOVOLTAIC MODULES
JP5977686B2 (en) 2013-02-13 2016-08-24 信越化学工業株式会社 Concentrating solar cell module manufacturing method and concentrating solar cell module
AT514091B1 (en) * 2013-03-26 2015-02-15 Jiangsu Solarflex Technical Composites Ltd Multilayer film for the back of a solar module
AT514090B1 (en) * 2013-03-26 2015-02-15 Jiangsu Solarflex Technical Composites Ltd Multilayer film for the back of a solar module
KR101622090B1 (en) 2013-11-08 2016-05-18 엘지전자 주식회사 Solar cell
US11482639B2 (en) 2014-05-27 2022-10-25 Sunpower Corporation Shingled solar cell module
US11942561B2 (en) 2014-05-27 2024-03-26 Maxeon Solar Pte. Ltd. Shingled solar cell module
USD896747S1 (en) 2014-10-15 2020-09-22 Sunpower Corporation Solar panel
USD999723S1 (en) 2014-10-15 2023-09-26 Sunpower Corporation Solar panel
USD913210S1 (en) 2014-10-15 2021-03-16 Sunpower Corporation Solar panel
USD933585S1 (en) 2014-10-15 2021-10-19 Sunpower Corporation Solar panel
US10861999B2 (en) 2015-04-21 2020-12-08 Sunpower Corporation Shingled solar cell module comprising hidden tap interconnects
CN106663706B (en) 2015-08-18 2019-10-08 太阳能公司 Solar panel
US10673379B2 (en) 2016-06-08 2020-06-02 Sunpower Corporation Systems and methods for reworking shingled solar cell modules
DE102017108223B4 (en) 2017-04-18 2024-05-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaic module and method for its manufacture
USD999157S1 (en) * 2023-04-27 2023-09-19 Feng Liu Solar panel

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2500685A1 (en) * 1981-02-24 1982-08-27 Aerospatiale Solar electricity generating panel - includes pairs of alternate PN and N-P junctions connected in series with alternate connections between substrate and surface layer
US4514583A (en) * 1983-11-07 1985-04-30 Energy Conversion Devices, Inc. Substrate for photovoltaic devices
US4830038A (en) * 1988-01-20 1989-05-16 Atlantic Richfield Company Photovoltaic module
US4981525A (en) * 1988-02-19 1991-01-01 Sanyo Electric Co., Ltd. Photovoltaic device
US5091018A (en) 1989-04-17 1992-02-25 The Boeing Company Tandem photovoltaic solar cell with III-V diffused junction booster cell
US5096505A (en) * 1990-05-21 1992-03-17 The Boeing Company Panel for solar concentrators and tandem cell units
US5118361A (en) * 1990-05-21 1992-06-02 The Boeing Company Terrestrial concentrator solar cell module
US5167724A (en) 1991-05-16 1992-12-01 The United States Of America As Represented By The United States Department Of Energy Planar photovoltaic solar concentrator module
US6130465A (en) * 1997-10-29 2000-10-10 Light Point Systems Inc. Micro-solar assembly
US6248948B1 (en) * 1998-05-15 2001-06-19 Canon Kabushiki Kaisha Solar cell module and method of producing the same
US6353175B1 (en) * 1999-09-17 2002-03-05 Jx Crystals Inc. Two-terminal cell-interconnected-circuits using mechanically-stacked photovoltaic cells for line-focus concentrator arrays
US6248949B1 (en) 1999-10-28 2001-06-19 Gerald A. Turner Method of manufacturing a solar cell receiver plate of a concentrator photovoltaic array
DE60312358T2 (en) * 2002-05-17 2007-11-29 Jason E. Berkeley Schripsema Photovoltaic module with adjustable cooling body and method
DE102005035672B4 (en) * 2005-07-29 2010-02-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solar cell module for concentrating solar systems with a plurality of solar cells on a surface coated with a metal layer substrate and method for its preparation
US8084684B2 (en) * 2006-10-09 2011-12-27 Solexel, Inc. Three-dimensional thin-film solar cells

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104303319A (en) * 2011-11-25 2015-01-21 Soitec公司 Method for preventing an electrical shortage in a semiconductor layer stack, thin substrate cpv cell, and solar cell assembly

Also Published As

Publication number Publication date
ES2661769T3 (en) 2018-04-03
WO2009143931A2 (en) 2009-12-03
EP2279531A2 (en) 2011-02-02
US20110048501A1 (en) 2011-03-03
WO2009143931A3 (en) 2010-04-29
EP2110863A1 (en) 2009-10-21
KR20100136520A (en) 2010-12-28
EP2110863A8 (en) 2009-12-09
EP2279531B1 (en) 2018-01-03

Similar Documents

Publication Publication Date Title
CN102007606A (en) Solar cell module
US6531653B1 (en) Low cost high solar flux photovoltaic concentrator receiver
US9466748B2 (en) Optoelectronic device with heat spreader unit
KR101183743B1 (en) Solar cell module and method for its production
US7977567B2 (en) Photovoltaic module and the use thereof
US8525214B2 (en) Semiconductor chip assembly with post/base heat spreader with thermal via
US8531024B2 (en) Semiconductor chip assembly with post/base heat spreader and multilevel conductive trace
US8153477B2 (en) Method of making a semiconductor chip assembly with a post/dielectric/post heat spreader
US20110104856A1 (en) Method of making a semiconductor chip assembly with a post/base/post heat spreader
US20090114265A1 (en) Solar Concentrator
CN102610583B (en) Package carrier and method for manufacturing the same
US20090159122A1 (en) Leadframe Receiver Package
JP4794402B2 (en) Solar cell and concentrating solar power generation unit
CN102782875B (en) Solar module II
CN102117801B (en) Manufacturing method of high-power light-emitting diode module structure
US10333015B2 (en) Solar cell assembly I
KR101352129B1 (en) Concentration Photovoltaic Receiver Module for High Heat Emission
JP2012164915A (en) Photoelectric conversion device and photoelectric conversion module
WO2001099201A1 (en) Shingle circuits for thermophotovoltaic systems
JP2013042087A (en) Solar cell module

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20110406