CN101996695A - High-voltage resistant electrode structure and manufacturing method thereof - Google Patents
High-voltage resistant electrode structure and manufacturing method thereof Download PDFInfo
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- CN101996695A CN101996695A CN2009101671163A CN200910167116A CN101996695A CN 101996695 A CN101996695 A CN 101996695A CN 2009101671163 A CN2009101671163 A CN 2009101671163A CN 200910167116 A CN200910167116 A CN 200910167116A CN 101996695 A CN101996695 A CN 101996695A
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Abstract
The invention discloses a high-voltage resistant electrode structure, which comprises a shielding layer which is arranged on a platy conductive substrate and covers more than 50 percent of the platy conductive substrate. As the area covered by the shielding layer is greater than the exposed area of the platy conductive substrate, the breakdown voltage of an electrode is increased and the probability of the generation of arc is lowered. The invention also provides the manufacturing method of the electrode structure.
Description
Technical field
The present invention relates to a kind of electrode structure and manufacture method thereof, particularly a kind of high voltage withstanding electrode structure and manufacture method thereof.
Background technology
Fig. 1 a is the schematic diagram of existing battery lead plate and arc path.As shown in the figure, battery lead plate 100 has two other battery lead plate 200,300 on it, when having high voltage differential between battery lead plate 100 and battery lead plate 200 or battery lead plate 100 and the battery lead plate 300, electron discharge phenomenon via non-conducting medium such as atmosphere or vacuum state, be commonly referred to as arc phenomenon (arcing), just can produce.In Fig. 1 a, be called arc path (upper arcing path) herein, by battery lead plate 200 to the arc path of battery lead plate 100; Be called arc path (lower arcing path) down by battery lead plate 300 to the arc path of battery lead plate 100.Can form single schematic equivalent circuit and go up arc path with following arc path, shown in Fig. 1 b, capacitor C wherein
100/200With capacitor C
100/300Represent respectively by two parallel battery lead plate 100,200 formed electric capacity battery lead plate 100, the 300 formed electric capacity parallel with two; Resistance R
100In two arc paths respectively with capacitor C
100/200With capacitor C
100/300Series connection is to represent the resistance of the battery lead plate 100 that for example aluminum was constituted.With above-mentioned arc path is example, as voltage V
UWhen putting on battery lead plate 100, capacitor C
100/200Voltage may surpass the breakdown voltage (breakdown voltage) of dielectric medium, and cause arc phenomenon, and this phenomenon can be considered capacitor C
100/200Form short circuit.And owing to be the resistance R of metal material
100Its resistance value is little, just can produce a large amount of electric currents resistance R of flowing through in this circuit
100, and may cause the disabler of electrode.Therefore battery lead plate 100 often is made of refractory metal material, and it has high breakdown voltage, as titanium (titanium, Ti), tungsten (tungsten, W) or graphite (graphite), perhaps at the metal surface upgrading to increase high voltage withstanding collapse ability.
Yet even selection has the material that the metal of high breakdown voltage material is used as electrode, a large amount of power losing issues that cause because of arc phenomenon still do not solve.Therefore, avoiding arc phenomenon to produce under the battery lead plate conductivity keeping, is very necessary something.
Summary of the invention
The present invention proposes a kind of high pressure resistant electrode structure and manufacture method thereof, and it is provided with shielding layer at tabular conductive base, utilizes shielding layer coating area to promote the breakdown voltage of electrode greater than the bare area of tabular conductive base, and does not cause arc phenomenon.The high pressure resistant electrode structure of one embodiment of the invention comprises tabular conductive base and is arranged at the lip-deep shielding layer of tabular conductive base.The material of shielding layer is that ceramic material and shielding layer cover the screening rate of tabular conductive base greater than 50%.Shielding layer comprises first shielding layer and second shielding layer, and wherein first shielding layer is arranged at the upper surface of tabular conductive base and second shielding layer is arranged at the lower surface of tabular conductive base.
The high pressure resistant electrode structure of one embodiment of the invention can comprise that also metal level or wire netting compartment are arranged on shielding layer or the exposed tabular conductive base.
The manufacture method of the electrode structure of one embodiment of the invention in order to make as above-mentioned high pressure resistant electrode structure, forms shielding layer on the surface of tabular conductive base.In different embodiment, the method that forms shielding layer include but not limited to the differential arc oxidation anode treatment method (Micro ArcQxidization, MAO) and atmospheric electricity slurry spraying method (Atmosphere Plasma Spray, APS).
Below illustrate in detail by the specific embodiment conjunction with figs., when the effect that is easier to understand purpose of the present invention, technology contents, characteristics and is reached.
Description of drawings
Fig. 1 a is the structure cutaway view and the arc path thereof of existing electrode structure.
Fig. 1 b is the equivalent circuit diagram of the arc path among Fig. 1 a.
Fig. 2 a is depicted as the cross-sectional schematic of high pressure resistant electrode structure according to an embodiment of the invention.
Fig. 2 b is the schematic equivalent circuit of arc path among Fig. 2 a.
Fig. 3 a is depicted as the cross-sectional schematic of the electrode structure of a comparative examples.
Fig. 3 b is the schematic equivalent circuit of arc path among Fig. 3 a.
Figure 4 shows that the cross-sectional schematic of high pressure resistant electrode structure according to an embodiment of the invention.
Fig. 5 a, Fig. 5 b, Fig. 5 c are the cross-sectional schematic of the high pressure resistant electrode structure of further embodiment of this invention.
Fig. 6 a and Fig. 6 b are the cross-sectional schematic of the high pressure resistant electrode structure of yet another embodiment of the invention.
Fig. 7 is the cross-sectional schematic of the high pressure resistant electrode structure of one embodiment of the invention.
Fig. 8 a, Fig. 8 b, Fig. 8 c are the cross-sectional schematic of the high pressure resistant electrode structure of one embodiment of the invention.
Fig. 9 is the cross-sectional schematic of the high pressure resistant electrode structure of one embodiment of the invention.
The primary clustering symbol description
100,200,300 battery lead plates
C
100/200, C
100/300Electric capacity
R
100Resistance
V
U, V
LVoltage
110 tabular conductive bases
112 upper surfaces
114 lower surfaces
115,117 sidewalls
116 through-hole structures
120 shielding layers
122 first shielding layers
124 second shielding layers
130 wire netting compartments
140 metal levels
C
110/200, C
110/300Electric capacity
R
110, R
120, R
122, R
124Resistance
Embodiment
The invention provides a kind of high pressure resistant electrode structure and manufacture method thereof, it comprises tabular electrically-conductive backing plate and is arranged at shielding layer on the tabular electrically-conductive backing plate, and the material of shielding layer is a ceramic material.Described embodiment is only for the purpose of explanation and narration, and is non-in order to limit scope of the present invention.
One embodiment of the invention please refer to Fig. 2 a, and Fig. 2 a is the cross-sectional schematic of the high pressure resistant electrode structure of one embodiment of the invention.As shown in the figure, tabular conductive base 110, battery lead plate for example, it can be thin plate and material and can be metal including but not limited to aluminium (Al), titanium (Ti), magnesium (Mg), iron (Fe), tungsten (W) etc., or is nonmetal.Shielding layer 120, for example material is a ceramic material, be arranged on the surface of tabular conductive base 110, itself and have screening rate greater than 50%.Wherein shielding layer 120 comprises first shielding layer 122 and second shielding layer 124, and first shielding layer 122 is arranged at the upper surface 112 of tabular conductive base 110; Second shielding layer 124 is arranged at the lower surface 114 of tabular conductive base 110.Because the area of the tabular conductive base 110 of shielding layer 120 coverings greater than the bare area of tabular conductive base 110, therefore can promote the breakdown voltage of tabular conductive base 110 and not cause arc phenomenon.
It is above-mentioned to continue, and after explaining that why coating large tracts of land material is the shielding layer of ceramic material, can improve the breakdown voltage of tabular conductive base 110, please refer to Fig. 2 b, and Fig. 2 b is the schematic equivalent circuit of arc path among Fig. 2 a.Before explaining, please refer to Fig. 1 a earlier, arc phenomenon betides when another battery lead plate 200 or 300 is provided with and is close to battery lead plate 100, and battery lead plate 100,200 or battery lead plate 100,300 to voltage difference surpass the breakdown voltage of dielectric medium.Then, with reference to figure 2b, upper and lower arc path forms single circuit altogether.The equivalent electric circuit of last arc path is by capacitor C
110/200, R
110And R
122Form; Capacitor C wherein
110/200Electric capacity between the battery lead plate 200 of representing tabular conductive base 110 and not showing; R
110With R
122Represent the resistance of tabular conductive base 110 and the resistance of shielding layer 122 respectively.The equivalent electric circuit of following arc path is by capacitor C
110/300, R
110And R
124Form; Capacitor C wherein
110/300Electric capacity between the battery lead plate 300 of representing tabular conductive base 110 and not showing; R
110With R
124Represent the resistance of tabular conductive base 110 and the resistance of shielding layer 124 respectively.The total impedance R of arc path
TEqual resistance (R
122+ R
110) // (R
124+ R
110) impedance.Since by the shielding layer that ceramic material constituted, its resistance R
122Or R
124Impedance big, so total impedance R
TAlso bigger; Therefore, when applying voltage V
UOr V
LThe time, the impedance of flowing through of the electric current of moment is R
TResistor network (resistive network) can produce a large amount of voltage drops (voltage drop), this voltage drop meeting reduces capacitor C effectively
110/200, C
110/300Between voltage, so can protect capacitor C
110/200, C
110/300Avoid collapse.
Shown in Fig. 2 a, shielding layer 120 is arranged at the lip-deep screening rate of tabular conductive base 110 greater than 50%.The selection of the size of screening rate rate value is significant, and it is explained as follows.Be depicted as the cross-sectional schematic of the electrode structure of a relative embodiment as Fig. 3 a, the screening rate of its shielding layer 120 probably has only 50% or still less.The equivalent circuit diagram of Fig. 3 a is illustrated among Fig. 3 b, wherein goes up arc path and forms single circuit with following arc path.Herein, total impedance is resistance (R
120+ R
110The R of) //
110Impedance, it is less than resistance R
110Impedance.Inevitably, have voltage under the resistor network of this total impedance reduce to little, capacitor C then
110/200, C
110/300Can't be protected effectively.
Below will introduce the variant embodiment of the foregoing description, and the equivalent electric circuit analysis of following examples is similar in appearance to the embodiment shown in Fig. 2 a, thus below promptly repeat no more.
In one embodiment, the preferred values of the screening rate of the tabular conductive base 110 of shielding layer 120 coverings is approximately greater than 70%.In another embodiment, shielding layer 120 also can cover tabular conductive base 110 fully, and screening rate can be 100%, as shown in Figure 4.
Come, please refer to Fig. 5 a, Fig. 5 b, Fig. 5 c, Fig. 5 a, Fig. 5 b, Fig. 5 c are the cross-sectional schematic of the high pressure resistant electrode structure of further embodiment of this invention.As shown in the figure, high pressure resistant electrode structure comprises that also wire netting compartment 130 is arranged on the tabular conductive base 110 of overlay masking layer 120 not.Different embodiment explanations explanation below at first, sees also Fig. 5 a, as shown in the figure, first shielding layer 122 has at least one opening 123, and with the upper surface 112 of the tabular conductive base 110 of expose portion, and wire netting compartment 130 is arranged at opening 123 places and covers the part upper surface 112 that exposes.Please refer to Fig. 5 b again, in this embodiment, first shielding layer 122 is arranged at the upper surface 112 of tabular conductive base 110, and expose portion upper surface 112, and wire netting compartment 130 is arranged on the part upper surface 112 that tabular conductive base 110 exposes.In addition, shown in Fig. 5 c, wire netting compartment 130 also can cover part first shielding layer 122 around the opening 123.In the above-described embodiments, only list the upper surface 112 that metal grill layer 130 is arranged at tabular conductive base 110 among Fig. 5 a, Fig. 5 b, Fig. 5 c.But be understandable that same structure also can be arranged at the lower surface 114 of tabular conductive base 110.Promptly do not give unnecessary details herein.
The above-mentioned explanation that continues, in an embodiment again, shown in Fig. 6 a and Fig. 6 b, high pressure resistant electrode structure comprises that also metal level 140 is arranged on the sidewall 115 of the tabular conductive base 110 of overlay masking layer 120 not.Shown in Fig. 6 a, first shielding layer 122 and second shielding layer 124 are arranged at the upper surface 112 and lower surface 114 of tabular conductive base 110 respectively, in addition and expose the periphery of upper surface 112 and the periphery of lower surface 112.Metal level 140 is arranged at the sidewall 115 of tabular conductive base 110 and covers the periphery of the upper surface 112 that exposes and the periphery of the lower surface 114 that exposes.Then, please refer to Fig. 6 b, in another embodiment, metal level 140 coats the sidewall 115 that is arranged at tabular conductive base 110 and covers partly upper surface 112 and partly first shielding layer 122 and partly lower surface 114 and part second shielding layer 124.In above-mentioned two embodiment, metal level 140 all can be metallic plate or wire netting compartment.
In one embodiment, please refer to Fig. 7, shielding layer 120 can be covered on the tabular conductive base 110 in fact fully, and wire netting compartment 130 also is formed directly on the shielding layer 120.Also or, shown in Fig. 8 a, the screening rate of shielding layer 120 greater than 50% prerequisite under, shielding layer 120 is the sidewall 115 of the tabular conductive base 110 in cover part only, and wire netting compartment 130 can the embodiment of similar Fig. 7 shown in, directly be formed on the shielding layer 120; Perhaps shown in Fig. 8 b, metal level 140 coats the sidewall 115 and its upper surface 112 of the tabular conductive base 110 that exposes, shown in the embodiment of similar Fig. 6 a, also can be with reference to the embodiment of figure 6b, make metal level 140 also coat shielding layer 120, wherein metal level 140 can be metallic plate or wire netting compartment.And in another embodiment, shown in Fig. 8 c, the wire netting compartment 130 that is arranged on the shielding layer 120 can exist simultaneously with the metal level 140 of the sidewall 115 that is arranged at tabular conductive base 110 with its upper surface 112.
In addition, in above-mentioned all embodiment, can comprise also that on high pressure resistant electrode structure through-hole structure 116 runs through tabular conductive base 110 and shielding layer 120 according to user demand, as shown in Figure 9, and the sidewall 117 of through-hole structure 116 is all alternative is provided with or is not provided with shielding layer 120.And be understandable that the tabular conductive base 110 that Fig. 9 illustrated, shielding layer 120 only are that an embodiment illustrates through-hole structure 116 with the structural arrangements of metal level 130, only can not be arranged on this configuration structure in order to limit through-hole structure 116 of the present invention.
The manufacture method of the electrode structure of one embodiment of the invention is applied to as above-mentioned high pressure resistant electrode structure, and the manufacture method of this electrode structure comprises: tabular conductive base is provided; And form shielding layer on the surface of tabular conductive base.The method that wherein forms shielding layer including but not limited to the differential arc oxidation anode treatment method (Micro Arc Qxidization, MAO) and atmospheric electricity slurry spraying method (Atmosphere Plasma Spray, APS).And the screening rate of shielding layer is described as the foregoing description need be at least greater than 50%, and screening rate even can be 100% greater than 70% in a preferred embodiment.Ceramic shielding layer is covered on the tabular conductive base, the electronics on the tabular conductive base is evenly distributed, to slow down superpotential formation.
Continue, in said structure, the method for formation metallic plate or wire netting compartment comprises but is not limited to galvanoplastic, electroless plating method and depositional mode.In another embodiment, metallic plate or wire netting compartment sheet material finished product or semi-finished product for making in advance, and utilize the mode of locking to be arranged on the tabular conductive base that does not cover this shielding layer.And the formation of through-hole structure is thought in the direct punching press of tabular conductive base, boring or alternate manner formation; Also or, can after forming shielding layer and/or metal level, form with proper method again.
According to above-mentioned, one of feature of the present invention is arranged on the tabular conductive base for the shielding layer covering of ceramic material for utilizing material, and the screening rate of shielding layer must be greater than the tabular conductive base that exposes.Therefore arc phenomenon reduce effectively and tabular conductive base on breakdown voltage promote widely.And exposed partly tabular conductive base and depositing electrically conductive grid can make high pressure resistant electrode structure still have the characteristic of conduction.
In sum, a kind of high pressure resistant electrode structure of the present invention and manufacture method thereof, utilize shielding layer coating area greater than the bare area of tabular conductive base promoting the breakdown voltage of electrode, and reduce arc phenomenon.Above-described embodiment only is explanation technological thought of the present invention and characteristics, its purpose makes those skilled in the art can understand content of the present invention and is implementing according to this, when not limiting the present invention with this, be that every equalization of doing according to spirit disclosed in this invention changes or modification, must be encompassed in the claim of the present invention.
Claims (31)
1. high pressure resistant electrode structure comprises:
One tabular conductive base; And
One shielding layer is arranged on the surface of described tabular conductive base, and its material is ceramic material and has a screening rate greater than 50% that wherein said shielding layer comprises:
One first shielding layer is arranged at a upper surface of described tabular conductive base; And
One second shielding layer is arranged at a lower surface of described tabular conductive base.
2. high pressure resistant electrode structure as claimed in claim 1, the preferred value of wherein said screening rate is greater than 70%.
3. high pressure resistant electrode structure as claimed in claim 1, wherein said screening rate can be 100%.
4. high pressure resistant electrode structure as claimed in claim 1 also comprises a wire netting compartment and is arranged on the described tabular conductive base that does not cover described shielding layer.
5. high pressure resistant electrode structure as claimed in claim 1, also comprise a metal level be arranged on the described tabular conductive base that does not cover described shielding layer with the described shielding layer of part on.
6. high pressure resistant electrode structure as claimed in claim 5, wherein said metal level can be metallic plate or wire netting compartment.
7. high pressure resistant electrode structure as claimed in claim 1 also comprises a metallic plate or a wire netting compartment is arranged on the described shielding layer.
8. high pressure resistant electrode structure as claimed in claim 1, the sidewall of the described tabular conductive base in wherein said shielding layer cover part.
9. high pressure resistant electrode structure as claimed in claim 1 also comprises a through-hole structure and runs through described tabular conductive base and described shielding layer.
10. high pressure resistant electrode structure as claimed in claim 1, wherein said tabular conductive base is a thin plate.
11. high pressure resistant electrode structure as claimed in claim 1, the material of wherein said tabular conductive base can be metal or nonmetal.
12. the manufacture method of an electrode structure is applied to high pressure resistant electrode structure as claimed in claim 1, the manufacture method of described electrode structure comprises:
Described tabular conductive base is provided; And
Form described shielding layer on the surface of described tabular conductive base.
13. the manufacture method of electrode structure as claimed in claim 12, the method that wherein forms described shielding layer comprises differential arc oxidation anode treatment method (Micro Arc Qxidization, MAO) and atmospheric electricity slurry spraying method (Atmosphere Plasma Spray, APS).
14. the manufacture method of electrode structure as claimed in claim 12, the preferred value of wherein said screening rate is approximately greater than 70%.
15. the manufacture method of electrode structure as claimed in claim 12, wherein said screening rate can be 100%.
16. the manufacture method of electrode structure as claimed in claim 12 also comprises formation one wire netting compartment on the described tabular conductive base that does not cover described shielding layer.
17. the manufacture method of electrode structure as claimed in claim 16, the method that wherein forms described wire netting compartment comprises galvanoplastic, electroless plating method and depositional mode.
18. the manufacture method of electrode structure as claimed in claim 16, wherein said wire netting compartment is sheet material finished product or the semi-finished product made in advance, and utilizes the mode of locking to be arranged on the described described tabular conductive base that does not cover described shielding layer.
19. the manufacture method of electrode structure as claimed in claim 12, also comprise form a metal level be arranged on the described tabular conductive base that does not cover described shielding layer with the described shielding layer of part on.
20. the manufacture method of electrode structure as claimed in claim 19, the method that wherein forms described metal level comprises galvanoplastic, electroless plating method and depositional mode.
21. the manufacture method of electrode structure as claimed in claim 12 also comprises formation one metallic plate or a wire netting compartment and is arranged on the described shielding layer.
22. the manufacture method of electrode structure as claimed in claim 21, the method that wherein forms described metallic plate or described wire netting compartment comprises galvanoplastic, electroless plating method and depositional mode.
23. the manufacture method of electrode structure as claimed in claim 21, wherein said metallic plate or described wire netting compartment sheet material finished product or semi-finished product for making in advance, and utilize the method for locking to be arranged on the described shielding layer.
24. the manufacture method of electrode structure as claimed in claim 12 also comprises formation one through-hole structure and runs through described tabular conductive base and described shielding layer.
25. a high pressure resistant electrode structure comprises:
One tabular conductive base;
One shielding layer is arranged on the surface of described tabular conductive base, and its material is ceramic material and has a screening rate greater than 50% that wherein said shielding layer comprises: one first shielding layer is arranged at a upper surface of described tabular conductive base; With one second shielding layer, be arranged at a lower surface of described tabular conductive base; And
One metal level coats the sidewall that is arranged at described tabular conductive base and covers the described upper surface of part and partly described first shielding layer and partly described lower surface and described second shielding layer of part.
26. high pressure resistant electrode structure as claimed in claim 25, wherein said metal level can be metallic plate or wire netting compartment.
27. a high pressure resistant electrode structure comprises:
One tabular conductive base;
One shielding layer, be arranged on the surface of described tabular conductive base, its material is ceramic material and has a screening rate greater than 50%, wherein said shielding layer comprises: one first shielding layer, be arranged at a upper surface of described tabular conductive base, and described first shielding layer has at least one opening with the described upper surface of expose portion; Reach and one second shielding layer, be arranged at a lower surface of described tabular conductive base; And
One wire netting compartment is arranged at described opening part and covers the described upper surface of part that exposes.
28. high pressure resistant electrode structure as claimed in claim 27, wherein wire netting compartment and cover described first shielding layer of described parameatal part.
29. a high pressure resistant electrode structure comprises:
One tabular conductive base;
One shielding layer, be arranged on the surface of described tabular conductive base, its material is ceramic material and has a screening rate greater than 50% that wherein said shielding layer comprises: one first shielding layer, be arranged at a upper surface of described tabular conductive base, and the described upper surface of expose portion; Reach one second shielding layer, be arranged at a lower surface of described tabular conductive base; And
One wire netting compartment is arranged on this upper surface of part that this tabular conductive base exposes.
30. a high pressure resistant electrode structure comprises:
One tabular conductive base;
One shielding layer is arranged on the surface of this tabular conductive base, and its material is ceramic material and has a screening rate greater than 50% that wherein this shielding layer comprises: one first shielding layer is arranged at a upper surface of this tabular conductive base and exposes this upper surface periphery; And one second shielding layer, be arranged at a lower surface of described tabular conductive base and expose described lower surface periphery; And
One metal level is arranged at the sidewall of described tabular conductive base and covers described upper surface periphery that exposes and the described lower surface periphery that exposes.
31. high pressure resistant electrode structure as claimed in claim 30, wherein said metal level can be metallic plate or wire netting compartment.
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|---|---|---|---|
| CN 200910167116 CN101996695B (en) | 2009-08-18 | 2009-08-18 | High-voltage resistant electrode structure and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910167116 CN101996695B (en) | 2009-08-18 | 2009-08-18 | High-voltage resistant electrode structure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101996695A true CN101996695A (en) | 2011-03-30 |
| CN101996695B CN101996695B (en) | 2013-09-11 |
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| EP0935265A3 (en) * | 1998-02-09 | 2002-06-12 | Wilson Greatbatch Ltd. | Thermal spray coated substrate for use in an electrical energy storage device and method |
| CN100541685C (en) * | 2004-03-22 | 2009-09-16 | 广东风华高新科技股份有限公司 | A kind of manufacture method of high-voltage sheet type multilayer ceramic dielectric capacitor |
| CN1731548A (en) * | 2004-08-04 | 2006-02-08 | 广东风华邦科电子有限公司 | Ring ceramic dielectric capacitors |
| KR100663942B1 (en) * | 2005-03-24 | 2007-01-02 | 삼성전기주식회사 | Multi-layer Ceramic Capacitor and Production Method Thereof |
| CN101350250A (en) * | 2007-07-20 | 2009-01-21 | 泉州市火炬电子元件厂 | Laminated ceramic capacitor with safety failure mode |
| CN201247691Y (en) * | 2008-07-14 | 2009-05-27 | 禾伸堂企业股份有限公司 | Lamination ceramic capacitor structure |
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