CN101993030A - Micro movable device and method for manufacturing the same - Google Patents
Micro movable device and method for manufacturing the same Download PDFInfo
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- CN101993030A CN101993030A CN2010102506912A CN201010250691A CN101993030A CN 101993030 A CN101993030 A CN 101993030A CN 2010102506912 A CN2010102506912 A CN 2010102506912A CN 201010250691 A CN201010250691 A CN 201010250691A CN 101993030 A CN101993030 A CN 101993030A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
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Abstract
The present invention relates to a micro movable device and a method for manufacturing the same. A parasitic capacitance between a signal line and a drive line is prevented from increasing, simultaneously, a drive voltage for driving a movable part is reduced. The signal line (13) is provided with a drive electrode (16a), the grounding line (14) is provided with the drive electrode (16b), an assistant drive electrode (17a) is arranged with the drive electrode (16a) side by side, an assistant drive electrode 17b) is arranged with the drive electrode (16b) side by side, and the drive electrodes (16a, 16b) and the assistant drive electrodes (17a, 17b) are all provided with movable electrodes (19).
Description
Technical field
The present invention relates to the manufacture method of little movable device and little movable device, for example, be suitable in the driving voltage that the movable part that reduces little movable device drives, realizing the method for hot-swap.
Background technology
MEMS (Micro Electro Mechanical System) constitutes on the same substrate by element parts, sensor, executive component, electronic circuit etc. are integrated into, and is utilized in various fields such as printhead, pressure sensor.
Here, using under the situation of MEMS as high frequency devices such as impedance matching box or HF switches, owing to compare, not only can extremely reduce loss, and linearity is being also outstanding, so the application of being waited in expectation downwards for wireless system etc. with semiconductor devices.
Here, using under the situation of MEMS as high-frequency element, the method as making the high-frequency signal on/off that transmits by holding wire has cold cut to change (cold switching) and hot-swap (hotswitching).It is under high-frequency signal is not transfused to state to holding wire that cold cut is changed, and carries out the method for available (up)/unavailable (down) action of the holding wire on the earth connection.Hot-swap is under high-frequency signal is transfused to state to holding wire, the method for carrying out the available/unavailable action of the holding wire on the earth connection.
In this hot-swap, when holding wire when being in down state when upstate shifts, can cause self-sustaining (selfholding) phenomenon.That is, in hot-swap, produce electrostatic attraction, irrespectively make holding wire keep down state with the driving signal of available/unavailable action of carrying out holding wire based on high-frequency signal.
For fear of this phenomenon of such self-sustaining, can increase the spring constant of the support unit that holding wire is supported, so that overcome the electrostatic attraction that produces by high-frequency signal, can make holding wire transfer to upstate from down state.
In addition, following method is for example disclosed in patent documentation 1: for the influence to the output signal effect of the inertial sensor of micromachine structure of the area load that reduces change, arranged outside auxiliary electrode by at the electrode that forms capacitor can be set at the current potential different with the current potential of size quality body.
But,, then exist and have to increase this and be used to this problem of driving voltage that holding wire is shifted to down state from upstate if increase the spring constant of the support unit that holding wire is supported for fear of this phenomenon of self-sustaining.
And, in patent documentation 1 disclosed method, because holding wire and earth connection arranged opposite, so by the interval determination electrostatic attraction between holding wire and the earth connection.Therefore, because the electrostatic attraction between holding wire and the earth connection increases, need the corresponding with it size of auxiliary electrode that makes to increase, so exist the parasitic capacitance between holding wire and the drive wire to become big problem.
[patent documentation 1] TOHKEMY 2008-145440 communique
Summary of the invention
The objective of the invention is to, provide a kind of in the parasitic capacitance increase that suppresses between holding wire and the drive wire, can make the little movable device of the driving voltage reduction that drives movable part and the manufacture method of little movable device.
According to a mode of the present invention, a kind of little movable device is provided, it is characterized in that possessing: holding wire is formed on the supporting substrates; Earth connection is formed on the described supporting substrates, disposes side by side with described holding wire; First drive electrode is configured on the described holding wire; Second drive electrode is configured on the described earth connection; The first process auxiliary drive electrode disposes side by side with described first drive electrode; The second process auxiliary drive electrode disposes side by side with described second drive electrode; And movable electrode, the configuration of devices spaced apart ground is supported on the described supporting substrates on described first drive electrode, described second drive electrode, the described first process auxiliary drive electrode and the described second process auxiliary drive electrode.
According to a mode of the present invention, a kind of little movable device is provided, it is characterized in that possessing: signal input terminal is formed on the supporting substrates; Signal output terminal is formed on the described supporting substrates; First drive electrode between described signal input terminal and described signal output terminal, is formed on the supporting substrates; Second drive electrode between described signal input terminal and described signal output terminal, is formed on the supporting substrates, with described first drive electrode insulation; Dielectric film, be arranged on described first drive electrode and described second drive electrode on; First electric conductor, have the part that is connected with described signal input terminal and and described first drive electrode between across the opposed part of described dielectric film; Second electric conductor, have the part that is connected with described signal output terminal and and described second drive electrode between across the opposed part of described dielectric film; Movable electrode, be formed on the top of described first drive electrode and described second drive electrode, have: and between described first drive electrode and described second drive electrode across dielectric film and the opposed part of described first drive electrode and and described first drive electrode and described second drive electrode between across dielectric film and the opposed part of described second drive electrode; And auxiliary electrode, be formed on the described supporting substrates, opposed with the part of described movable electrode.
According to a mode of the present invention, a kind of manufacture method of little movable device is provided, it is characterized in that possessing: on supporting substrates, form mutually the holding wire of configuration and the operation of earth connection side by side; On described holding wire and described earth connection, form first drive electrode and second drive electrode respectively, and formation is disposed at the first process auxiliary drive electrode of described first drive electrode and second drive electrode and the operation of the second process auxiliary drive electrode respectively side by side; On the supporting substrates that is formed with described first drive electrode, described second drive electrode, the described first process auxiliary drive electrode and the described second process auxiliary drive electrode, form the operation of expendable film; On described expendable film, form movable electrode, and will be embedded to the operation in the described expendable film at the supporting mass of the described movable electrode of described supporting substrates upper support; On described expendable film, form the operation of the spring members that described movable electrode is connected with described supporting mass; With on described expendable film, form after the described spring members operation that described expendable film is removed from described supporting substrates.
The effect of invention:
According to the present invention, can in the parasitic capacitance increase that suppresses between holding wire and the drive wire, the driving voltage that drives movable part be reduced.
Description of drawings
Fig. 1 is the stereogram of the brief configuration of little movable device of relating to of expression the 1st embodiment of the present invention.
Fig. 2 (a) is the vertical view of the brief configuration of little movable device of relating to of expression the 1st embodiment of the present invention, and Fig. 2 (b) is the profile that the A-A ' line with Fig. 2 (a) cuts off.
Fig. 3 is the figure of the process auxiliary drive electrode area of the driving voltage in little movable device of presentation graphs 1 than interdependence.
Fig. 4 is the figure of the electric capacity that forms in each one of little movable device of presentation graphs 1.
Fig. 5 is the figure of the process auxiliary drive electrode area of the parasitic capacitance increment rate in little movable device of presentation graphs 1 than interdependence.
Fig. 6 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 2nd embodiment of the present invention, and Fig. 6 (b) is the profile that the A-A ' line with Fig. 6 (a) cuts off.
Fig. 7 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 2nd embodiment of the present invention, and Fig. 7 (b) is the profile that the A-A ' line with Fig. 7 (a) cuts off.
Fig. 8 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 2nd embodiment of the present invention, and Fig. 8 (b) is the profile that the A-A ' line with Fig. 8 (a) cuts off.
Fig. 9 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 2nd embodiment of the present invention, and Fig. 9 (b) is the profile that the A-A ' line with Fig. 9 (a) cuts off.
Figure 10 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 2nd embodiment of the present invention, the profile that Figure 10 (b) cuts off with the A-A ' line of Figure 10 (a).
Figure 11 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 2nd embodiment of the present invention, and Figure 11 (b) is the profile that the A-A ' line with Figure 11 (a) cuts off.
Figure 12 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 2nd embodiment of the present invention, and Figure 12 (b) is the profile that the A-A ' line with Figure 12 (a) cuts off.
Figure 13 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 2nd embodiment of the present invention, and Figure 13 (b) is the profile that the A-A ' line with Figure 13 (a) cuts off.
Figure 14 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 3rd embodiment of the present invention, and Figure 14 (b) is the profile that the A-A ' line with Figure 14 (a) cuts off.
Figure 15 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 3rd embodiment of the present invention, and Figure 15 (b) is the profile that the A-A ' line with Figure 15 (a) cuts off.
Figure 16 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 3rd embodiment of the present invention, and Figure 16 (b) is the profile that the A-A ' line with Figure 16 (a) cuts off.
Figure 17 (a) is the vertical view of the brief configuration of little movable device of relating to of expression the 4th embodiment of the present invention, and Figure 17 (b) is the profile that the A-A ' line with Figure 17 (a) cuts off, and Figure 17 (c) is the profile that the B-B ' line with Figure 17 (a) cuts off.
Figure 18 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 5th embodiment of the present invention, and Figure 18 (b) is the profile that the A-A ' line with Figure 18 (a) cuts off, and Figure 18 (c) is the profile that the B-B ' line with Figure 18 (a) cuts off.
Figure 19 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 5th embodiment of the present invention, and Figure 19 (b) is the profile that the A-A ' line with Figure 19 (a) cuts off, and Figure 19 (c) is the profile that the B-B ' line with Figure 19 (a) cuts off.
Figure 20 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 5th embodiment of the present invention, and Figure 20 (b) is the profile that the A-A ' line with Figure 20 (a) cuts off, and Figure 20 (c) is the profile that the B-B ' line with Figure 20 (a) cuts off.
Figure 21 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 4th embodiment of the present invention, and Figure 21 (b) is the profile that the A-A ' line with Figure 21 (a) cuts off, and Figure 21 (c) is the profile that the B-B ' line with Figure 21 (a) cuts off.
Figure 22 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 5th embodiment of the present invention, and Figure 22 (b) is the profile that the A-A ' line with Figure 22 (a) cuts off, and Figure 22 (c) is the profile that the B-B ' line with Figure 22 (a) cuts off.
Figure 23 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 5th embodiment of the present invention, and Figure 23 (b) is the profile that the A-A ' line with Figure 23 (a) cuts off, and Figure 23 (c) is the profile that the B-B ' line with Figure 23 (a) cuts off.
The accompanying drawing explanatory note:
11,51-supporting substrates; 12,15,18- insulating barrier 13,53a, 53b-holding wire; The 14-earth connection; 54a～54d- earth electrode 16a, 16b-drive electrode; 17a, 17b, 57a, 57b-process auxiliary drive electrode; 19,59-movable electrode; 20a, 20b-connecting line; 21a, 21b, 23a～23d, 63-supporting mass; 22a～22d, 62-spring members; 24-drives signal generator; 25a～25d-low pass filter 30,70-expendable film; 33,34, K1～K8-peristome; 35,71-metal film; 56a, the 56b-holding wire drive electrode of holding concurrently; 59a, 59b-wiring.
The specific embodiment
Below, with reference to accompanying drawing, little movable device that embodiments of the present invention are related to describes.For give same Reference numeral with a part, omit its explanation sometimes.
(the 1st embodiment)
Fig. 1 is the stereogram of the brief configuration of little movable device of relating to of expression the 1st embodiment of the present invention, Fig. 2 (a) is the vertical view of the brief configuration of little movable device of relating to of expression the 1st embodiment of the present invention, and Fig. 2 (b) is the profile that the A-A ' line with Fig. 2 (a) cuts off.
Among Fig. 1 and Fig. 2, on supporting substrates 11, be formed with insulating barrier 12, on insulating barrier 12, be formed with holding wire 13 and earth connection 14.Here, holding wire 13 and earth connection 14 configuration side by side mutually on insulating barrier 12.Wherein, holding wire 13 can transmit high frequency signal Sr such as RF (Radio Frequency) signal.In addition,, the semiconductor substrate that constitutes by Si etc. can be adopted, also insulating properties substrates such as glass, pottery can be adopted as supporting substrates 11.
And, on insulating barrier 12, be laminated with insulating barrier 15 according to the mode that covers holding wire 13 and earth connection 14, on insulating barrier 15, be formed with drive electrode 16a, 16b and process auxiliary drive electrode 17a, 17b.Here, drive electrode 16a is configured on the holding wire 13, and drive electrode 16b is configured on the earth connection 14.And process auxiliary drive electrode 17a and drive electrode 16a dispose side by side, and process auxiliary drive electrode 17b and drive electrode 16b dispose side by side.
And, on insulating barrier 15, be laminated with insulating barrier 18 according to the mode that covers drive electrode 16a, 16b and process auxiliary drive electrode 17a, 17b.And the mode according to drive electrode 16a, 16b and process auxiliary drive electrode 17a, 17b intersect is supported on the insulating barrier 18 across the movable electrode 19 of arranged spaced with drive electrode 16a, 16b and process auxiliary drive electrode 17a, 17b.Wherein, the material of insulating barrier 12,15,18 for example can use silicon oxide layer or silicon nitride film.
Here, on insulating barrier 18, be formed with supporting mass 23a～23d that movable electrode 19 is supported.And, by between four angles of supporting mass 23a～23d and movable electrode 19, setting up spring members 22a～22d respectively, make that movable electrode 19 is bearing on the insulating barrier 18 up and down freely.Wherein, the material of spring members 22a～22d for example can use silicon nitride film.Here, have elasticity in order to make spring members 22a～22d, spring members 22a～22d bends laterally after four jiaos of difference bending to the inside of movable electrode 19 again.
In addition, on insulating barrier 18, be formed with supporting mass 21a, the 21b that is used for movable electrode 19 is applied the driving signal.And, by difference the wiring 20a of construction company, 20b between the central portion of supporting mass 21a, 21b and movable electrode 19, make supporting mass 21a, 21b be connected with movable electrode 19.
Here, connecting line 20a, 20b become the little spring structure of spring constant by turning back at the width of movable electrode 19, and movable electrode 19 constitutes and can realize the DC coupling with supporting mass 21a, 21b.Wherein, movable electrode 19, connecting line 20a, 20b and supporting mass 21a, 21b, 23a～23d can be made of same electric conductor.In addition, the material of holding wire 13, earth connection 14, drive electrode 16a, 16b, process auxiliary drive electrode 17a, 17b, movable electrode 19, connecting line 20a, 20b and supporting mass 21a, 21b, 23a～23 for example can use metals such as Al or Cu.
And supporting mass 21a is connected with driving signal generator 24 via low pass filter 25a.In addition, drive electrode 16a, 16b are connected with driving signal generator 24 via low pass filter 25b, 25c respectively.In addition, process auxiliary drive electrode 17a, 17b are connected with driving signal generator 24 via low pass filter 25d.In addition, drive signal generator 24 and can produce the driving signal Sm that movable electrode 19 is moved up and down.Low pass filter 25a～25c can separate the high-frequency signal Sr that transmits by holding wire 13 with driving signal Sm electricity.
And high-frequency signal Sr is transfused to holding wire 13, and driving signal Sm is transfused to movable electrode 19, drive electrode 16a, 16b and process auxiliary drive electrode 17a, 17b via low pass filter 25a～25c respectively.Then, when movable electrode 19, drive electrode 16a, 16b and process auxiliary drive electrode 17a, 17b became high potential based on driving signal Sm, movable electrode 19 was grounded line 14 and attracts, and holding wire 13 is by movable electrode 19 and earth connection 14 Capacitance Coupled.And, when holding wire 13 by movable electrode 19 during with earth connection 14 Capacitance Coupled, high-frequency signal Sr flows to earth connection 14, the transmission by 13 couples of high-frequency signal Sr of holding wire is cut off.
On the other hand, when movable electrode 19, drive electrode 16a, 16b and process auxiliary drive electrode 17a, 17b become electronegative potential based on driving signal Sm, electrostatic attraction between movable electrode 19 and the earth connection 14 reduces, and movable electrode 19 becomes big with the interval of earth connection 14.Therefore, high-frequency signal Sr does not flow to earth connection 14 and is transmitted by holding wire 13.
Here, because movable electrode 19 and drive electrode 16a, 16b be connected with driving signal generator 24 via low pass filter 25a～25c respectively, so become the high frequency floating state.Therefore, holding wire 13 is with holding wire 13 → drive electrode 16a → movable electrode 19 → drive electrode 16b → earth connection 14 these paths and earth connection 14 Capacitance Coupled.The result, even under high-frequency signal Sr is transfused to state to holding wire 13, make holding wire 13 transfer under the situation of upstate from down state, also can cut apart and reduce the virtual voltage that is applied between movable electrode 19 that hot-swap is exerted an influence and drive electrode 16a, the 16b by electric capacity, can with drive signal Sm and become electronegative potential irrespectively, prevent that movable electrode 19 from keeping the self-sustaining phenomenon of down state.
And, by at the side of drive electrode 16a, 16b configuration process auxiliary drive electrode 17a, 17b, can under the situation that driving voltage Sm is risen, improve the electrostatic attraction that movable electrode 19 is attracted.Therefore, even under the situation of the spring constant that has increased spring members 22a～22d in order to prevent the self-sustaining phenomenon, movable electrode 19 is shifted from upstate be down state.
Driving voltage Sm can be by following (1) formula definition.
Wherein, k is a spring constant, and S is the electrode area of drive electrode 16a, 16b and process auxiliary drive electrode 17a, 17b, g.Be the movable electrode 19 of movable electrode 19 when being in upstate and the gap (gap) of drive electrode 16a, 16b.
Here, by at the side of drive electrode 16a, 16b configuration process auxiliary drive electrode 17a, 17b, the electrode area S of (1) formula is increased, driving voltage Sm is reduced.
Fig. 3 is the figure of the process auxiliary drive electrode area of the driving voltage in little movable device of presentation graphs 1 than interdependence.Wherein, L11 represents that spring constant k is 120[N/m] situation, L12 represents that spring constant k is 80[N/m] situation, L13 represents that spring constant k is 40[N/m] situation.
In Fig. 3, if the electrode area of relative drive electrode 16a, 16b increases the electrode area of process auxiliary drive electrode 17a, 17b, then under any one spring constant k, driving voltage Sm reduces.For example, when when drive electrode 16a, 16b equate with electrode area among process auxiliary drive electrode 17a, the 17b, driving voltage Sm reduces about 30%.
Fig. 4 is the figure of the electric capacity that forms in each one of little movable device of presentation graphs 1.
In Fig. 4, when not having process auxiliary drive electrode 17a, 17b in the formation at Fig. 1, there are capacitor C gtg, drive electrode 16a and capacitor C tsf, drive electrode 16b between the movable electrode 19 and the capacitor C fb between capacitor C bs, movable electrode 19 and the supporting substrates 11 between capacitor C tgf, holding wire 13 and the supporting substrates 11 between the movable electrode 19 between capacitor C sts, earth connection 14 and the drive electrode 16b between holding wire 13 and the drive electrode 16a.
Therefore, holding wire 13 and capacitor C sg between the earth connection 14 are equivalent to electric capacity that these 4 capacitor C sts, Ctsf, Ctgf, Cgtg are connected.Thus, the virtual voltage that is applied between the movable electrode 19 that hot-swap is exerted an influence and drive electrode 16a, the 16b is cut apart based on electric capacity and is reduced.
Here, the capacitor C sg between holding wire 13 and the earth connection 14 can be by following (4) formula definition.
[mathematical expression 1]
Csg＝Csts‖[Ctsf‖{Cfb+(Ctgf‖Cgtg)}]+Csb …(4)
On the other hand, if have process auxiliary drive electrode 17a, 17b, then append capacitor C A1 between movable electrode 19 and process auxiliary drive electrode 17a, the 17b, and process auxiliary drive electrode 17a, 17b and supporting substrates 11 between capacitor C A2, these capacitor C A1, CA2 can regard the recruitment of the capacitor C fb between movable electrode 19 and the supporting substrates 11 as.
Fig. 5 is the figure of the process auxiliary drive electrode area of the parasitic capacitance increment rate in little movable device of presentation graphs 1 than interdependence.Wherein L1 represents that the thickness of insulating barrier 12 is the situation of 20 μ m, and L2 represents that the thickness of insulating barrier 12 is the situation of 15 μ m, and L3 represents that the thickness of insulating barrier 12 is the situation of 10 μ m.
In Fig. 5, if the electrode area of drive electrode 16a, 16b increases the electrode area of process auxiliary drive electrode 17a, 17b relatively, then in the thickness of any one insulating barrier 12, parasitic capacitance all can increase.
But, the increase of the electrode area of the relative process auxiliary drive electrode of the increase of parasitic capacitance 17a, 17b is slower.For example, be under the situation of 20 μ m at the thickness of insulating barrier 12, even when being provided with drive electrode 16a, 16b process auxiliary drive electrode of the same area 17a, 17b, the increase of parasitic capacitance also is about 8%.
Its reason is, if regard capacitor C A1, CA2 as between holding wire 13 and the earth connection 14 capacitor C sg, then comprise capacitor C tsf between drive electrode 16a, 16b and the movable electrode 19 and the composition that is connected in series of the capacitor C A1 between movable electrode 19 and process auxiliary drive electrode 17a, the 17b, because of the air layer between insulating barrier on drive electrode 16a, the 16b 18 and the movable electrode 19, and process auxiliary drive electrode 17a, 17b on insulating barrier 18 and the influence of the air layer between the movable electrode 19, make electric capacity increase mitigation.
(the 2nd embodiment)
Fig. 6 (a)～Figure 13 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 2nd embodiment of the present invention, and Fig. 6 (b)～Figure 13 (b) is the profile that the A-A ' line with Fig. 6 (a)～Figure 13 (a) cuts off respectively.
In Fig. 6,, on supporting substrates 11, form insulating barrier 12 by utilizing method such as CVD.Then, by utilizing methods such as sputter or evaporation, on insulating barrier 12, form metal film.Then,, the metal film on the insulating barrier 12 is carried out composition, on insulating barrier 12, form holding wire 13 and the earth connection 14 of Fig. 1 by utilizing photoetching technique and etching technique.
Then, as shown in Figure 7,, on insulating barrier 12, form the insulating barrier 15 that covers holding wire 13 and earth connection 14 by utilizing method such as CVD.
Then, as shown in Figure 8, make insulating barrier 15 filmings, allow holding wire 13 and earth connection 14 expose from insulating barrier 15 by utilizing methods such as CMP, and with insulating barrier 15 planarizations.
Then, as shown in Figure 9, pile up insulating barrier 15 once more, make holding wire 13 and earth connection 14 be insulated layer 15 and cover by utilizing methods such as CVD.
Then, as shown in figure 10,, on insulating barrier 15, form metal film by utilizing methods such as sputter or evaporation.Then,, the metal film on the insulating barrier 15 is carried out composition, on insulating barrier 15, form drive electrode 16a, 16b and process auxiliary drive electrode 17a, the 17b of Fig. 1 by utilizing photoetching technique and etching technique.Then, by utilizing method such as CVD, on insulating barrier 15, form the insulating barrier 18 that covers drive electrode 16a, 16b and process auxiliary drive electrode 17a, 17b.
Then, as shown in figure 11,, on insulating barrier 18, form expendable films 30 such as photosensitive polyimide or SOG by utilizing method such as coating process.Then,, expendable film 30 is carried out composition, in expendable film 30, form and imbed supporting mass 21a, the 21b of Fig. 1, the peristome of 23a～23d by utilizing photoetching technique and etching technique.
Then, by utilizing methods such as sputter or evaporation, the mode according to the peristome of expendable film 30 is embedded in forms metal film on expendable film 30.Then,, the metal film on the expendable film 30 is carried out composition, on expendable film 30, form movable electrode 19 and connecting line 20a, 20b, and form supporting mass 21a, 21b, the 23a～23d that is imbedded by expendable film 30 by utilizing photoetching technique and etching technique.
Then, as shown in figure 12,, on expendable film 30, form the insulating barrier that covers movable electrode 19 and supporting mass 21a, 21b, 23a～23d by utilizing method such as CVD.Then,, the insulating barrier on the expendable film 30 is carried out composition, on expendable film 30, form spring members 22a～22d that supporting mass 23a～23d is connected with movable electrode 19 by utilizing photoetching technique and etching technique.
Then, as shown in figure 13,, expendable film 30 is removed from supporting substrates 11, between movable electrode 19 and insulating barrier 18, formed the cavity, form little movable device of Fig. 1 thus by utilizing method such as wet etching.
(the 3rd embodiment)
Figure 14 (a)～Figure 16 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 3rd embodiment of the present invention, and Figure 14 (b)～Figure 16 (b) is the profile that the A-A ' line with Figure 14 (a)～Figure 16 (a) cuts off respectively.
In Figure 14,, on supporting substrates 11, form insulating barrier 12,15 successively by utilizing method such as CVD.Then,, insulating barrier 15 is carried out composition, on insulating barrier 15, form thus and imbed the holding wire 13 of Fig. 1 and the peristome 33,34 of earth connection 14 respectively by utilizing photoetching technique and etching technique.
Then, as shown in figure 15,, on insulating barrier 15, form the metal film 35 of the peristome 33,34 of buried insulating layer 15 by utilizing methods such as sputter or evaporation.
Then, as shown in figure 16, by utilizing method such as CMP, the mode of exposing according to insulating barrier 15 forms holding wire 13 and the earth connection of being imbedded by peristome 33,34 respectively 14 with metal film 35 filmings on insulating barrier 12.Then, by carrying out the operation of Fig. 9～Figure 13, form little movable device of Fig. 1.
(the 4th embodiment)
In the present embodiment, have the function of drive wire concurrently, realized the inhibition that the parasitic capacitance between holding wire and the drive wire is increased by making holding wire.
Figure 17 (a) is the vertical view of the formation of little movable device of relating to of expression the 4th embodiment of the present invention, and Figure 17 (b) is the profile that the A-A ' line with Figure 17 (a) cuts off, and Figure 17 (c) is the profile that the B-B ' line with Figure 17 (a) cuts off respectively.
Among Figure 17, on supporting substrates 51, be formed with holding wire hold concurrently drive electrode 56a, 56b.Here, the holding wire mutual alignment arrangements of drive electrode 56a, 56b of holding concurrently.In the front and back that holding wire is held concurrently drive electrode 56a, 56b, alignment arrangements has holding wire 53a, 53b, and holding wire hold concurrently drive electrode 56a, 56b about, alignment arrangements has process auxiliary drive electrode 57a, 57b.Here, hold concurrently drive electrode 56a, 56b of holding wire is configured to from process auxiliary drive electrode 57a, 57b to the outstanding such flat shape of the direction of holding wire 53a, 53b.And, on the supporting substrates 51, dispose earth electrode 54a～54d at hold concurrently drive electrode 56a, 56b four jiaos of holding wire.
And, on supporting substrates 51,, be laminated with insulating barrier 58 according to covering the hold concurrently mode of drive electrode 56a, 56b, process auxiliary drive electrode 57a, 57b and earth electrode 54a～54d of holding wire 53a, 53b, holding wire.And, on insulating barrier 58, be formed with via peristome K2 and be connected with holding wire 53a and across the hold concurrently wiring 59a of a part of arranged opposite of drive electrode 56a of insulating barrier 58 and holding wire.In addition, on insulating barrier 58, be formed with via peristome K4 and be connected with holding wire 53b and across the hold concurrently wiring 59b of a part of arranged opposite of drive electrode 56b of insulating barrier 58 and holding wire.
In addition, have according to process auxiliary drive electrode 57a, 57b and by the holding wire of process auxiliary drive electrode 57a, the 57b clamping opposed mode of drive electrode 56a, 56b of holding concurrently, across the movable electrode 59 of arranged spaced at insulating barrier 58 upper supports.
Here, on insulating barrier 58, be formed with the supporting mass 63 of supporting movable electrode 59.And, by between supporting mass 63 and movable electrode 59, setting up spring members 22, make that movable electrode 59 is bearing on the insulating barrier 58 up and down freely.
In addition, at wiring 59a and the holding wire formation capacitor C sts1 between the drive electrode 56a that holds concurrently, at wiring 59b and the holding wire formation capacitor C sts2 between the drive electrode 56b that holds concurrently, holding concurrently at movable electrode 59 and holding wire forms capacitor C tsf between the drive electrode 56a, at movable electrode 59 and the holding wire formation capacitor C tgf between the drive electrode 56b that holds concurrently.
And, when by drive signal make movable electrode 59, holding wire hold concurrently drive electrode 56a, 56b and process auxiliary drive electrode 57a, when 57b becomes high potential, movable electrode 59 is attracted by hold concurrently drive electrode 56a, 56b of holding wire, and holding wire is held concurrently drive electrode 56a, 56b by movable electrode 59 mutual Capacitance Coupled.And,, then be output from Sig2 through holding wire 53a, wiring 59a, holding wire the hold concurrently drive electrode 56b, wiring 59b, holding wire 53b of drive electrode 56a, movable electrode 59, holding wire that hold concurrently if high-frequency signal is by from Sig1 input.
Here, high-frequency signal, is propagated by the Capacitance Coupled of capacitor C sts1 across dielectric film 58 to the hold concurrently propagation of drive electrode 56a of holding wire from wiring 59a.High-frequency signal is held concurrently drive electrode 56a to the propagation of movable part 59 from holding wire, is propagated by the Capacitance Coupled of capacitor C tsf across dielectric film 58.High-frequency signal, is propagated by the Capacitance Coupled of capacitor C tgf across dielectric film 58 to the hold concurrently propagation of drive electrode 56b of holding wire from movable part 59.High-frequency signal is held concurrently drive electrode 56b to the propagation of metal 59b from holding wire, is propagated by the Capacitance Coupled of capacitor C sts2 across dielectric film 58.
These capacitor C sts1, capacitor C tsf, capacitor C tgf, capacitor C sts2 are connected in series, same with the 1st embodiment, the virtual voltage that movable electrode 59 that hot-swap is exerted an influence and holding wire are held concurrently and be applied between drive electrode 56a, the 56b can be cut apart by electric capacity and reduce.
In the 4th embodiment, same with first embodiment, the increase of the electrode area of the relative process auxiliary drive electrode of the increase of parasitic capacitance 57a, 57b is slower, can obtain based on seldom metal film formation process, suppress holding wire 53a, 53b and holding wire hold concurrently the parasitic capacitance between drive electrode 56a, the 56b increase, can make little movable device of the driving voltage reduction that drives movable electrode 59 simultaneously.Promptly, in the 1st embodiment, ground floor, the second layer that comprises drive electrode 16a, 16b and drive electrode 17a, 17b by comprising holding wire 13 and earth connection 14, the 3rd layer of this 3 layers of metal films that comprise movable electrode 19 etc. form operations and form, but in the 4th embodiment, by comprising that the hold concurrently ground floor of drive electrode 56a, 56b and process auxiliary drive electrode 57a, 57b, these 2 layers of metal films of the second layer of comprising movable electrode 59 etc. of holding wire 53a, 53b, holding wire forms operations and form, and therefore can realize the simplification of manufacturing process.
(the 5th embodiment)
Figure 18 (a)～Figure 23 (a) is the vertical view of the manufacture method of little movable device of relating to of expression the 5th embodiment of the present invention, Figure 18 (b)～23 (b) is the profile that the A-A ' line with Figure 18 (a)～Figure 23 (a) cuts off respectively, and Figure 18 (c)～Figure 23 (c) is the profile that the B-B ' line with Figure 18 (a)～Figure 23 (a) cuts off respectively.
In Figure 18,, on supporting substrates 51, form metal film by utilizing methods such as sputter or evaporation.Then,, the metal film on the supporting substrates 51 is carried out composition, on supporting substrates 51, form holding wire 53a, 53b, holding wire hold concurrently drive electrode 56a, 56b and process auxiliary drive electrode 57a, 57b by utilizing photoetching technique and etching technique.Then, by utilizing method such as CVD, on supporting substrates 51, form and cover the insulating barrier 58 that holding wire 53a, 53b, holding wire are held concurrently drive electrode 56a, 56b and process auxiliary drive electrode 57a, 57b.
As shown in figure 19,, insulating barrier 58 is carried out composition, form peristome K1～K8 that holding wire 53a, 53b and earth electrode 54a～54d are exposed at insulating barrier 58 by utilizing photoetching technique and etching technique.
Then, as shown in figure 20,, on insulating barrier 58, form expendable films 70 such as photosensitive polyimide or SOG by utilizing method such as coating process.Then,, expendable film 70 is carried out composition by utilizing photoetching technique and etching technique, the expendable film 70 on the zone of only residual formation movable electrode 59 and spring members 22 and peristome K1, K3, the K5～K8, the expendable film 70 that will form in part is in addition removed.
Then, as shown in figure 21,, on insulating barrier 58, form metal film 71 according to the mode that covers expendable film 70 by utilizing methods such as sputter or evaporation.At this moment, in peristome K2, the K4 of dielectric film 58, imbedded metal film 71.
Then, as shown in figure 22,, metal film 71 is carried out composition, on expendable film 70, form movable electrode 59, and form holding wire 53a, the 53b that is connected with holding wire 53a, 53b via peristome K2, K4 respectively by utilizing photoetching technique and etching technique.
By simultaneously metal film 71 being carried out composition, on dielectric film 58, form the supporting mass of being imbedded by expendable film 70 63.Then, dielectric film is carried out film forming, composition, on expendable film 70, form the spring members 22 that supporting mass 63 is connected with movable electrode 59.
Then, as shown in figure 23,, expendable film 70 is removed from supporting substrates 51, between movable electrode 59 and insulating barrier 58, formed the cavity, form little movable device of Fig. 1 thus by utilizing method such as dry ecthing.
Claims (5)
1. little movable device is characterized in that possessing:
Holding wire is formed on the supporting substrates;
Earth connection is formed on the described supporting substrates, disposes side by side with described holding wire;
First drive electrode is configured on the described holding wire;
Second drive electrode is configured on the described earth connection;
The first process auxiliary drive electrode disposes side by side with described first drive electrode;
The second process auxiliary drive electrode disposes side by side with described second drive electrode; With
Movable electrode, the configuration of devices spaced apart ground is supported on the described supporting substrates on described first drive electrode, described second drive electrode, the described first process auxiliary drive electrode and the described second process auxiliary drive electrode.
2. little movable device according to claim 1 is characterized in that possessing:
Drive signal generator, produce the driving signal that drives described movable electrode, should drive signal and offer described first drive electrode, described second drive electrode, the described first process auxiliary drive electrode and the described second process auxiliary drive electrode; With
Low pass filter is inserted between the described first process auxiliary drive electrode and described second process auxiliary drive electrode and the described driving signal generator, will cut off by the high-frequency signal that described holding wire sends.
3. little movable device according to claim 1 and 2 is characterized in that possessing:
Supporting mass, the described movable electrode of devices spaced apart ground supporting on described first drive electrode, described second drive electrode, the described first process auxiliary drive electrode and the described second process auxiliary drive electrode; With
Spring members is erected between described movable electrode and the described supporting mass, and described movable electrode is connected with described supporting mass up and down freely.
4. little movable device is characterized in that possessing:
Signal input terminal is formed on the supporting substrates;
Signal output terminal is formed on the described supporting substrates;
First drive electrode between described signal input terminal and described signal output terminal, is formed on the supporting substrates;
Second drive electrode between described signal input terminal and described signal output terminal, is formed on the supporting substrates, with described first drive electrode insulation;
Dielectric film, be arranged on described first drive electrode and described second drive electrode on;
First electric conductor, have the part that is connected with described signal input terminal and and described first drive electrode between across the opposed part of described dielectric film;
Second electric conductor, have the part that is connected with described signal output terminal and and described second drive electrode between across the opposed part of described dielectric film;
Movable electrode, be formed on the top of described first drive electrode and described second drive electrode, have: and between described first drive electrode and described second drive electrode across dielectric film and the opposed part of described first drive electrode and and described first drive electrode and described second drive electrode between across dielectric film and the opposed part of described second drive electrode; And
Auxiliary electrode is formed on the described supporting substrates, and is opposed with the part of described movable electrode.
5. the manufacture method of a little movable device is characterized in that, possesses:
On supporting substrates, form the holding wire of configuration arranged side by side mutually and the operation of earth connection;
On described holding wire and described earth connection, form first drive electrode and second drive electrode respectively, and formation is disposed at the first process auxiliary drive electrode of described first drive electrode and second drive electrode and the operation of the second process auxiliary drive electrode respectively side by side;
On the supporting substrates that is formed with described first drive electrode, described second drive electrode, the described first process auxiliary drive electrode and the described second process auxiliary drive electrode, form the operation of expendable film;
On described expendable film, form movable electrode, and will be embedded to the operation in the described expendable film at the supporting mass of the described movable electrode of described supporting substrates upper support;
On described expendable film, form the operation of the spring members that described movable electrode is connected with described supporting mass; With
On described expendable film, form after the described spring members operation that described expendable film is removed from described supporting substrates.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP186039/2009 | 2009-08-10 | ||
| JP2009186039A JP5398411B2 (en) | 2009-08-10 | 2009-08-10 | Micro movable device and manufacturing method of micro movable device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101993030A true CN101993030A (en) | 2011-03-30 |
| CN101993030B CN101993030B (en) | 2012-10-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102506912A Expired - Fee Related CN101993030B (en) | 2009-08-10 | 2010-08-10 | Micro movable device and method for manufacturing the same |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8445976B2 (en) |
| JP (1) | JP5398411B2 (en) |
| CN (1) | CN101993030B (en) |
Cited By (1)
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| TWI501274B (en) * | 2013-03-25 | 2015-09-21 | Toshiba Kk | Mems device and method of manufacturing the same |
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| JP5204066B2 (en) * | 2009-09-16 | 2013-06-05 | 株式会社東芝 | MEMS device |
| JP5050022B2 (en) * | 2009-09-16 | 2012-10-17 | 株式会社東芝 | MEMS device |
| JP5526061B2 (en) * | 2011-03-11 | 2014-06-18 | 株式会社東芝 | MEMS and manufacturing method thereof |
| US11402288B2 (en) * | 2014-04-04 | 2022-08-02 | Robert Bosch Gmbh | Membrane-based sensor having a plurality of spacers extending from a cap layer |
| US9340412B2 (en) | 2014-07-28 | 2016-05-17 | Ams International Ag | Suspended membrane for capacitive pressure sensor |
| JP6877376B2 (en) * | 2018-03-02 | 2021-05-26 | 株式会社東芝 | MEMS element |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN101993030B (en) | 2012-10-10 |
| US8445976B2 (en) | 2013-05-21 |
| JP2011036948A (en) | 2011-02-24 |
| JP5398411B2 (en) | 2014-01-29 |
| US20110127878A1 (en) | 2011-06-02 |
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