CN101982415A - Method for preparing block nano ZnO material - Google Patents
Method for preparing block nano ZnO material Download PDFInfo
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- CN101982415A CN101982415A CN 201010534671 CN201010534671A CN101982415A CN 101982415 A CN101982415 A CN 101982415A CN 201010534671 CN201010534671 CN 201010534671 CN 201010534671 A CN201010534671 A CN 201010534671A CN 101982415 A CN101982415 A CN 101982415A
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Abstract
The invention relates to a method for preparing a block nano ZnO material, and belongs to the technical field of semiconductor photoelectric nano materials. The method comprises the following steps of: ultrasonically cleaning a polyester (PET)-based tin doped indium oxide (ITO) substrate in acetone, ethanol and distilled water respectively, and reacting zinc nitrate or zinc acetate and aqueous solution of hexamethylenetetramine in a reaction kettle at the temperature of between 75 and 95 DEG C; and finally growing the block nano ZnO material on the substrate. The method has the advantages of simple equipment, convenience for operating and low manufacturing cost. The prepared nano ZnO material has a square nano structure with side length of 50 to 100 nanometers, has obvious edge property between sides, and can be used in the field of field emission display devices.
Description
Technical field
The present invention relates to a kind of preparation method of box-shaped nano ZnO material, belong to the semiconductor optoelectronic technical field of nano material.
Background technology
Nano zine oxide (ZnO) is a kind of important II-VI family semiconductor material with wide forbidden band, energy gap is 3.37 eV, high exciton bind energy (being 60 meV under the room temperature) has improved the excitation-emission performance of nano ZnO material greatly, having reduced the excitation threshold under the room temperature, is a kind of excellent material that is suitable for the visible and ultraviolet light emission under room temperature or the higher temperature.In addition, its electroconductibility is higher, and the source is abundant, and cheap, nontoxic and environmentally safe has characteristics such as biological safety and biocompatibility, is a kind of oxide semiconductor material with broad prospect of application.
The nano ZnO material of different-shape (as nanometer flower, nano wire, nanotube, nanometer plate etc.) has different physical and chemical performances, can be widely used in fields such as solar cell, nano generator, photodiode, laser generator.Piece shape nano material has unique limit and face characteristic, has application promise in clinical practice aspect field emission display.
Summary of the invention
The object of the present invention is to provide a kind of method that on tin-doped indium oxide (ITO) substrate, prepares the box-shaped nano ZnO material based on polyester (PET).
The preparation method of a kind of box-shaped nano ZnO material of the present invention is characterized in that having following process and step:
A. at first will be based on tin-doped indium oxide (ITO) substrate of polyester (PET) ultrasonic 10～15 min in acetone, ethanol, distilled water respectively, dry, stand-by down at 80～100 ℃ then.
B. with the zinc nitrate of finite concentration certain volume or zinc acetate aqueous solution and with vulkacit H (HMTA) the water-soluble liquid-phase mixing of concentration, be transferred to subsequently in the reactor, at 75～95 ℃ of reaction 3～8 h with volume; The concentration of zinc nitrate or zinc acetate solution is 0.02～0.10 mol/L;
C. take out tin-doped indium oxide (ITO) substrate based on polyester (PET) then, be placed on and soak 5 min in the deionized water, flush away impurity at 90～120 ℃ of oven dry 30 min, is cooled to room temperature subsequently, finally obtains the box-shaped nano ZnO material.
The present invention has prepared the box-shaped nano ZnO material by solution method first on tin-doped indium oxide (ITO) substrate based on polyester (PET), prepared nano ZnO material is the square shape nanostructure of about 50～100 nm of the length of side, has the local edge between tangible face and the face, applicable to the Field Emission Display field.Through energy spectrum analysis, the ZnO nano material among the present invention, the ratio of its contained Zn atom and O atom can infer that near 1 this nano material is ZnO.
The inventive method has simple, easy to operate, the characteristics such as production cost is low, safety and environmental protection of conversion unit.
Description of drawings
Fig. 1 is scanning electron microscope (SEM) the photo figure of prepared box-shaped nano ZnO material in the embodiment of the invention.
Embodiment
After now specific embodiments of the invention being described in.
Embodiment 1: the preparation process of present embodiment is as follows:
1) the ITO substrate is respectively through acetone, ethanol, distilled water ultrasonic cleaning 15 min, 95 ℃ of dried for standby then.
2) with the Zn (NO of 0.02 mol/L of 20 mL
3)
2The aqueous solution with the isopyknic HMTA aqueous solution of concentration, be transferred to subsequently in the reactor, 80 ℃ the reaction 4 h.
3) take out substrate and soak 5 min in deionized water, flush away impurity at 100 ℃ of oven dry 30 min, is cooled to room temperature, finally obtains the box-shaped nano ZnO material.
Adopt aforesaid method can on the ITO substrate, prepare regular box-shaped nano material, from the SEM electromicroscopic photograph, can see that the length of side of box-shaped nano material is about 100 nm.The per-cent of contained Zn atom and O atom is respectively 34.96%, 42.39% in this nano material of energy spectrum analysis, can infer that this nano material is ZnO.
Embodiment 2: the preparation process of present embodiment is as follows:
1) the ITO substrate is respectively through acetone, ethanol, distilled water ultrasonic cleaning 15 min, 95 ℃ of dried for standby then.
2) with the Zn (NO of 0.10 mol/L of 20 mL
3)
2The aqueous solution with the isopyknic HMTA aqueous solution of concentration, be transferred to subsequently in the reactor, 95 ℃ the reaction 6 h.
3) take out substrate and soak 5 min in deionized water, flush away impurity at 100 ℃ of oven dry 30 min, is cooled to room temperature, finally obtains the box-shaped nano ZnO material.
Adopt aforesaid method can on the ITO substrate, prepare regular box-shaped nano material, from the SEM electromicroscopic photograph, can see that the length of side of box-shaped nano material is about 80 nm.The per-cent of contained Zn atom and O atom is respectively 24.96%, 37.39% in this nano material of energy spectrum analysis, can infer that this nano material is ZnO.
Embodiment 3: the preparation process of present embodiment is as follows:
1) the ITO substrate is respectively through acetone, ethanol, distilled water ultrasonic cleaning 15 min, 95 ℃ of dried for standby then.
2) with the Zn (NO of 0.05 mol/L of 20 mL
3)
2The aqueous solution with the isopyknic HMTA aqueous solution of concentration, be transferred to subsequently in the reactor, 95 ℃ the reaction 8 h.
3) take out substrate and soak 5 min in deionized water, flush away impurity at 100 ℃ of oven dry 30 min, is cooled to room temperature, finally obtains the box-shaped nano ZnO material.
Adopt aforesaid method can on the ITO conducting film, prepare regular box-shaped nano material, from the SEM electromicroscopic photograph, can see that the length of side of box-shaped nano material is about 70 nm.The per-cent of contained Zn atom and O atom is respectively 28.67%, 31.52% in this nano material of energy spectrum analysis, can infer that this nano material is ZnO.
Embodiment 4: the preparation process of present embodiment is as follows:
1) the ITO substrate is respectively through acetone, ethanol, distilled water ultrasonic cleaning 15 min, 95 ℃ of dried for standby then.
2) with the Zn (Ac) of 0.10 mol/L of 20 mL
2The aqueous solution with the isopyknic HMTA aqueous solution of concentration, be transferred to subsequently in the reactor, 90 ℃ the reaction 4 h.
3) take out substrate and soak 5 min in deionized water, flush away impurity at 120 ℃ of oven dry 30 min, is cooled to room temperature, finally obtains the box-shaped nano ZnO material.
Adopt aforesaid method can on the ITO substrate, prepare regular box-shaped nano material, from the SEM electromicroscopic photograph, can see that the length of side of box-shaped nano material is about 100 nm.The per-cent of contained Zn atom and O atom is respectively 31.32%, 36.95% in this nano material of energy spectrum analysis, can infer that this nano material is ZnO.
The pattern of prepared box-shaped nano ZnO material can be referring to Fig. 1 in the embodiment of the invention.Fig. 1 is scanning electron microscope (SEM) photo of box-shaped nano ZnO material.The length of side of box-shaped nano material is between 50～100 nm as seen from the figure.
After tested, the box-shaped nano ZnO material that the present invention makes has good luminous near 390 nm, and its intensity can reach 10000.
Claims (1)
1. the preparation method of a box-shaped nano ZnO material is characterized in that having following process and step:
A. at first will be based on tin-doped indium oxide (ITO) substrate of polyester (PET) ultrasonic 10～15 min in acetone, ethanol, distilled water respectively, dry, stand-by down at 80～100 ℃ then;
B. with the zinc nitrate of finite concentration certain volume or zinc acetate aqueous solution and with vulkacit H (HMTA) the water-soluble liquid-phase mixing of concentration, be transferred to subsequently in the reactor, under 75～95 ℃ of temperature, react 3～8 h with volume; The concentration of zinc nitrate or zinc acetate solution is 0.02～0.10 mol/L;
C. take out tin-doped indium oxide (ITO) substrate based on polyester (PET) then, be placed on and soak 5 min in the deionized water, flush away impurity at 90～120 ℃ of oven dry 30 min, is cooled to room temperature subsequently, finally obtains the box-shaped nano ZnO material.
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| CN 201010534671 CN101982415A (en) | 2010-11-08 | 2010-11-08 | Method for preparing block nano ZnO material |
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| CN 201010534671 CN101982415A (en) | 2010-11-08 | 2010-11-08 | Method for preparing block nano ZnO material |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2495074A (en) * | 2011-09-12 | 2013-04-03 | Univ Swansea | ZnO nanomaterials and gas sensors made using the nanomaterials |
| CN106986372A (en) * | 2017-04-25 | 2017-07-28 | 济南大学 | The preparation method of the network structure zinc oxide of mutual cuttage on a kind of aluminium-foil paper |
-
2010
- 2010-11-08 CN CN 201010534671 patent/CN101982415A/en active Pending
Non-Patent Citations (1)
| Title |
|---|
| 《上海大学学报》 20081031 贺英等 高分子络合法自组装ZnO纳米结构和形貌调控 文章内容 1实验部分，2结果与讨论 2.1和2.4部分 1 第14卷, 第5期 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2495074A (en) * | 2011-09-12 | 2013-04-03 | Univ Swansea | ZnO nanomaterials and gas sensors made using the nanomaterials |
| CN106986372A (en) * | 2017-04-25 | 2017-07-28 | 济南大学 | The preparation method of the network structure zinc oxide of mutual cuttage on a kind of aluminium-foil paper |
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Application publication date: 20110302 |