CN101976007B - Pixel structure and pixel array - Google Patents
Pixel structure and pixel array Download PDFInfo
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- CN101976007B CN101976007B CN2010102822498A CN201010282249A CN101976007B CN 101976007 B CN101976007 B CN 101976007B CN 2010102822498 A CN2010102822498 A CN 2010102822498A CN 201010282249 A CN201010282249 A CN 201010282249A CN 101976007 B CN101976007 B CN 101976007B
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Abstract
The invention relates to a pixel structure and pixel array comprising the pixel structure. The pixel structure comprises a scanning line, a capacitor electrode, a data line, an active component and a pixel electrode, wherein the capacitor electrode is electrically independent from the scanning line, and the capacitor electrode comprises a first part and at least one second part; the first part and the second part extend along different directions, and the extension direction of the first part is essentially same as that of the scanning line; the data line is criss-crossed with the scanning line and electrically independent from the scanning line, and the data line is overlapped on the second part of the capacitor electrode; the active component is electrically connected with the scanning line and the data line; and the pixel electrode is electrically connected with the active component and covers the data line and the capacitor electrode.
Description
Technical field
The invention relates to a kind of image element structure and picture element array, and particularly relevant for a kind of image element structure and picture element array of high demonstration aperture opening ratio.
Background technology
Social now multimedia technology is quite flourishing, is indebted to the progress of semiconductor subassembly and display device mostly.With regard to display, have that high image quality, space utilization efficient are good, the LCD of low consumpting power, advantageous characteristic such as radiationless becomes the main flow in market gradually.
Generally speaking, LCD mainly is to be made up of the liquid crystal layer that an active assembly array base plate, a subtend substrate and are sandwiched between the two.In order to overcome the visual angle problem under the large scale demonstration, the wide viewing angle technology of display panels also must ceaselessly improve and break through.Wherein, (polymer stabilized vertical alignment, PSVA) display panels has been widely used in the various electronic products polymer stabilizing vertical orientation.
At present, the design of the image element structure in the polymer stabilizing homeotropic liquid crystal display panel is to make data line and pixel electrode alternate configurations.That is to say that the both sides of each bar data line dispose different pixel electrodes.Under such layout, must keep the demonstration dark line of certain distance between data line and the pixel electrode to avoid orientation inequality or cross-talk phenomenon to be caused.In other words, the distance between the adjacent pixel electrode must surpass the live width of data line at least.So the demonstration aperture opening ratio of whole front panel will be therefore limited.
Summary of the invention
The present invention provides a kind of image element structure, and its pixel electrode covers corresponding data line and has the high aperture opening ratio that shows.
The present invention provides a kind of picture element array, and the distance of adjacent two pixel electrodes is short and help the demonstration aperture opening ratio that provides higher.
The present invention proposes a kind of image element structure, comprises one scan line, a capacitance electrode, a data line, a driving component and a pixel electrode.Capacitance electrode electrically is independent of sweep trace, and capacitance electrode comprises a first and at least one second portion.First and second portion along different directions extend and first the bearing of trend with sweep trace is identical in fact.Data line and sweep trace interlock and electrically are independent of sweep trace, and data line is overlapped in the second portion of capacitance electrode.Driving component electrically connects sweep trace and data line.Pixel electrode electrically connects driving component and covers data line and capacitance electrode.
In one embodiment of this invention, the first and the second portion of above-mentioned capacitance electrode are connected to each other, and first and second portion are divided into four orientation zones with pixel electrode.In addition, first and second portion for example connect into cross.In one embodiment, the area in four orientation zones about equally.
In one embodiment of this invention, above-mentioned pixel electrode more covers sweep trace.The quantity of at least one second portion is 2 o'clock, and one of them second portion and first link together, and sweep trace and two second portions are divided into four orientation zones with pixel electrode.In one embodiment, the area in four orientation zones about equally.
In one embodiment of this invention, above-mentioned pixel electrode has a plurality of orientation slits.
In one embodiment of this invention, it is online that above-mentioned data line is positioned at a center of pixel electrode in fact.
In one embodiment of this invention, the live width of above-mentioned second portion is in fact greater than the live width of data line.
The another kind of picture element array of the present invention comprises a plurality of aforesaid image element structures, wherein on the bearing of trend of sweep trace, and the distance of being separated by between the adjacent pixel electrode.
In one embodiment of this invention, above-mentioned distance is not more than the live width of data line.
Based on above-mentioned, the present invention is with data line in the image element structure and capacitance electrode overlapping and be disposed at pixel electrode institute region covered center.Retouching on the pipeline purging bearing of trend, do not needing the configuration space of reserved data line between the pixel electrode.Thus, the distance between adjacent pixel electrode can be reduced and helped to increase the arrangement area of pixel electrode.Use feasiblely, the picture element array that above-mentioned image element structure constituted has the high aperture opening ratio that shows.In addition, high open design of the present invention not only can increase aperture opening ratio, can also let the liquid crystal molecule at pixel electrode edge present stable arrangement, so can improve dark line generation and can promote light transmission rate.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and cooperates appended graphic elaborating as follows.
Description of drawings
Fig. 1 illustrates the picture element array that image element structure constituted for one embodiment of the invention, wherein has two image element structures to be illustrated out.
Fig. 2 illustrates the diagrammatic cross-section into the image element structure I-I ' along the line of Fig. 1.
Fig. 3 illustrates the synoptic diagram into the picture element array of another embodiment of the present invention.
Fig. 4 illustrates and is the image element structure of Fig. 3 diagrammatic cross-section along hatching line II-II '.
[primary clustering symbol description]
10,40: substrate
20,30,50,60: insulation course
32: contact openings
100,200: image element structure
110,210: sweep trace
120,220: capacitance electrode
122,222: the first parts
124,224: the second parts
130,230: data line
140,240: driving component
150,250: pixel electrode
152: the orientation slit
1000,2000: the picture element array
C: channel layer
D, g: distance
D: drain
G: gate
I-I ', II-II ': hatching line
P: orientation zone
S: source electrode
W1, W2, W3: live width.
Embodiment
Fig. 1 illustrates the picture element array that image element structure constituted for one embodiment of the invention, wherein has two image element structures to be illustrated out.Please with reference to Fig. 1, picture element array 1000 includes a plurality of image element structures 100 that array is arranged.In the present embodiment, though only represent picture element array 1000 with two image element structures 100 that are arranged in parallel, but the invention is not restricted to this.In other embodiment, two adjacent image element structures 100 can adopt the mode of staggered (staggered) or triangle (delta) to arrange in the picture element array 1000.That is to say that two adjacent image element structures 100 can align same straight line also can be according to the form arrangement of ladder.
Particularly, each image element structure 100 comprises one scan line 110, a capacitance electrode 120, a data line 130, a driving component 140 and a pixel electrode 150.Capacitance electrode 120 electrically is independent of sweep trace 110, and capacitance electrode 120 comprises a first 122 and a second portion 124.First 122 and second portion 124 along different directions extend and first 122 bearing of trend with sweep trace 110 is identical in fact.Data line 130 interlocks with sweep trace 110 and electrically is independent of sweep trace 110, and data line 130 is overlapped in the second portion 124 of capacitance electrode 120.Driving component 140 electrically connects sweep trace 110 and data line 130.Pixel electrode 150 electrically connects driving component 140 and covers data line 130 and capacitance electrode 120.
In the present embodiment, the first 122 and the second portion 124 of capacitance electrode 120 are connected to each other, and first 122 is divided into four orientation zone P with second portion 124 with pixel electrode 150.Can know that by Fig. 1 the different first 122 of bearing of trend for example connects into cross with second portion 124.In addition, pixel electrode 150 has a plurality of orientation slits 152.In the P of same orientation zone, the orientation slit 152 among the parallel in fact and adjacent orientation zone P of the bearing of trend of orientation slit 152 extends along different directions.Thus, image element structure 100 can have four different orientation zone P of alignment direction.
Particularly, picture element array 1000 for example can be applicable in the polymer-stabilized alignment liquid crystal display panel.That is to say that the setting of orientation slit 152 can provide alignment effect to make display panels have the display effect of wide viewing angle.In one embodiment, the area of four orientation zone P can be about equally so that all present approaching display effect on the different visual angles.That is to say that in the present embodiment, it is online that data line 130 can be positioned at a center of pixel electrode 150 in fact.At this moment, the second portion 124 of capacitance electrode 120 also is that to be positioned at the center of pixel electrode 150 online, and first 122 and the crossover location of second portion 124 for example are positioned at the center of pixel electrode 150 place areas.
But, the present invention do not limit the area of four orientations zone P must be for equating.In one embodiment, data line 130 can be not online at the center of pixel electrode 150 yet.Certainly, first 122 and the crossover location of second portion 124 also can not be positioned at the center of pixel electrode 150 in the capacitance electrode 120.That is data line 130 can distribute to obtain required orientation zone P with different demands with the allocation position of capacitance electrode 120 in the appropriateness adjustment.
In addition, in the present embodiment, the live width W1 of second portion 124 is in fact greater than the live width W2 of data line 130.Thus, 130 couplings help to relax data line 130 and attend the influence of institute's electrons transmitted signal to pixel electrode 150 voltages the second portion 124 of capacitance electrode 120 for data line.That is to say that the live width W1 of second portion 124 moderately increases can weaken the cross-talk phenomenon that data line 130 is caused.
Generally speaking, sweep trace 110, capacitance electrode 120 all are lighttight members in the image element structure 100 with data line 130.Therefore, present embodiment makes the arrangement area that the second portion 124 of data line 130 and capacitance electrode 120 overlaps and can reduce these light tight members.Therefore, image element structure 100 can have the demonstration aperture opening ratio of ideal (higher).In addition, the pixel electrode 150 of present embodiment covers data line 130 and pixel electrode 150 both sides across data line 130 on the Width of data line 130.Thus, do not need the configuration space of reserved data line 130 between the two adjacent pixel electrodes 150 and more help to improve the demonstration aperture opening ratio of total painting prime number group 1000.Specifically, be not more than the live width W2 of data line 130 apart from d between the two adjacent pixel electrodes 150.
More specifically, Fig. 2 illustrates the diagrammatic cross-section into the image element structure I-I ' along the line of Fig. 1.Please be simultaneously with reference to Fig. 1 and Fig. 2, image element structure 100 is disposed in fact on the substrate 10.In addition, image element structure 100 also includes insulation course 20 and insulation course 30, and it is disposed between other member.
In detail, driving component 140 for example includes gate G, channel layer C, source S and drain D.In the present embodiment, sweep trace 110, gate G and capacitance electrode 120 for example can be made by same conductive material layer.So the second portion 124 and the gate G of capacitance electrode 120 come down to the same one deck member on the substrate 10 in the section of Fig. 2.20 of insulation courses are covered on gate G and the second portion 124.What deserves to be mentioned is that insulation course 20 also can cover sweep trace 110 and first 122 in the section part that does not illustrate.
In addition, channel layer C be disposed on the insulation course 20 and the position above gate G.The gate G of present embodiment is the member that is extended out by sweep trace 110.But, other embodiment also can with channel layer C directly be disposed at sweep trace 110 tops so that the part of sweep trace 110 as the usefulness of gate G.
Source S and drain D all are positioned at channel layer C top, and the configuration bit set of source S and drain D is in the relative both sides of gate G.Source S is connected in data line 130 in fact and data line 130 is disposed on the insulation course 20.In other words, data line 130, source S and drain D are in fact by being made with one deck conductive material layer.In addition, insulation course 30 is disposed on data line 130, source S and the drain D, and insulation course 30 has contact openings 32.Pixel electrode is disposed on the insulation course 30 and by contact openings 32 and is electrically connected to drain D.
Present embodiment is a kind of embodiment that is used as driving component 140 with the amorphous silicon film transistor of end lock type.But, driving component 140 also can be that design or the polycrystalline SiTFT or the OTFT etc. of top lock type are common in the driving component in this field.
What deserves to be mentioned is that can be known by Fig. 1 and Fig. 2, the data line 130 of present embodiment is covered by pixel electrode 150, and data line 130 is located between the second portion 124 of pixel electrode 150 and capacitance electrode 120.Borrow such design can lighttight member be overlapped and be configured to improve the demonstration aperture opening ratio of image element structure 100 and picture element array 1000.Especially, on the bearing of trend of sweep trace 110, adjacent two pixel electrodes 150 can be not more than the live width W2 of data line 130 apart from d.
In addition, the insulation course 20 that is illustrated in the present embodiment can adopt different insulating material to make with different demands with insulation course 30.And the thickness of insulation course 20 and insulation course 30 can moderately increase to relax the coupling between the different component.For example, insulation course 30 can be organic insulator or flatness layer, and the cross-talk phenomenon between data line 130 and the pixel electrode 150 can be further cut down in the increase of its thickness.Thus, the voltage of pixel electrode 150 signal that is not easy to receive on the data line 130 influences.Therefore, image element structure 100 can have desirable display quality again with height demonstration aperture opening ratio.
What deserves to be mentioned is to have common knowledge the knowledgeable in the affiliated technical field and all understand, the design of image element structure is not limited to above-mentioned explanation.Fig. 3 illustrates the synoptic diagram into the picture element array of another embodiment of the present invention.Please with reference to Fig. 3, picture element array 2000 comprises a plurality of image element structures 200, and wherein image element structure 200 is arranged with the array mode.In the present embodiment, the array arrangement mode can be that the ranks matrix form is arranged, and also can be rounded projections arranged.
Each image element structure 200 comprises one scan line 210, a capacitance electrode 220, a data line 230, a driving component 240 and a pixel electrode 250.Capacitance electrode 220 electrically is independent of sweep trace 210, and capacitance electrode 220 comprises a first 222 and two second portions 224.First 222 and second portion 224 along different directions extend and first 222 bearing of trend with sweep trace 210 is identical in fact.Data line 230 interlocks with sweep trace 210 and electrically is independent of sweep trace 210, and data line 230 is overlapped in the second portion 224 of capacitance electrode 220.Driving component 240 electrically connects sweep trace 210 and data line 230.Pixel electrode 250 electrically connects driving component 240 and covers data line 230 and capacitance electrode 220.
The difference of present embodiment and previous embodiment is that the sweep trace 210 that the capacitance electrode 220 of present embodiment includes two second portions separated from one another 224 and present embodiment is covered by pixel electrode 250.Specifically, one of them second portion 224 links together with first 222 and is positioned at a side of sweep trace 210, another second 224 opposite sides that are positioned at sweep trace 210 partly.In addition, sweep trace 210 and two second portions 224 are divided into four orientation zone P with pixel electrode 250, and the sweep trace 210 of also can saying so is divided into four orientation zone P with data line 230 with pixel electrode 250.In the present embodiment, graphic clear in order to make, do not show the orientation slit among Fig. 3, but pixel electrode 250 in fact also has the orientation slit that is arranged in these orientations zone P (the orientation slit 152 that it can be illustrated with reference to figure 1).Can provide the different a plurality of orientations zone P of alignment direction to realize the Presentation Function of wide viewing angle when thus, picture element array 2000 is applied to the stabilization of polymer alignment LCD panel.
In one embodiment, the area of four orientation zone P about equally.So the crossover location of sweep trace 210 and data line 230 can be positioned at the center of pixel electrode 250.Certainly, with different design requirements, sweep trace 210 also can not be positioned at the center of pixel electrode 250 with the crossover location of data line 230, and makes the area of four orientation zone P different.
What deserves to be mentioned is that in the present embodiment, the live width W1 of second portion 224 is greater than the live width W2 of data line 230.So the signal on the data line 230 can receive the coupling of second portion 224 and be not easy to have influence on the voltage of pixel electrode 250.Therefore, the voltage of pixel electrode 230 is difficult for floating because of the cross-talk effect.In other words, image element structure 200 can have stable display quality.
The member of shading is used in the design of present embodiment, and promptly data line 230 and second portion 224 overlap with reduction shading area.So image element structure 200 can have desirable demonstration aperture opening ratio.In addition, on the bearing of trend of sweep trace 210, can be not more than the live width W2 of data line 230 apart from d between the two adjacent pixel electrodes 250.Thereby the area of configurable pixel electrode 250 reaches the high aperture opening ratio that shows greatly in the picture element array 2000.
Further, the sweep trace 210 of present embodiment is all covered by pixel electrode 250 with first 222.Therefore, on the bearing of trend of data line 230,250 of adjacent two pixel electrodes can be not more than the live width W3 of sweep trace 210 apart from g.Thus, in the picture element array 2000, the area that pixel electrode 250 disposed can have the high aperture opening ratio that shows greatly.
Fig. 4 illustrates and is the image element structure of Fig. 3 diagrammatic cross-section along hatching line II-II '.Please be simultaneously with reference to Fig. 3 and Fig. 4, image element structure 200 is to be disposed on the substrate 40, and image element structure 200 also includes insulation course 50 and insulation course 60.Substrate 40 is in order to providing the function of bearing carrier, and insulation course 50 and insulation course 60 are in order to provide the function of partition member.Thus, sweep trace 210, data line 230, capacitance electrode 220 can short circuit together.Particularly, the configuration mode of substrate 40, insulation course 50 and insulation course 60 can be with reference to the explanation of the foregoing description.Especially, the thickness of insulation course 50 and insulation course 60 optionally increases to reduce the cross-talk phenomenon between the member.
What deserves to be mentioned is that the sweep trace 210 of present embodiment is disposed in the area at pixel electrode 250 places, so pixel electrode 250 covers sweep trace 210.And data line 230 is all covered by pixel electrode 250 with second portion 224.So, need not be reserved with the configuration space of sweep trace 210 or data line 230 between the adjacent pixel electrode 250 and help to increase the arrangement area of pixel electrode 250.In addition, data line 230 overlaps with second portion 224, so the shading area of members is dwindled significantly and made image element structure 200 have pretty good demonstration aperture opening ratio.
In sum, the present invention overlaps the member of shading in the image element structure configuration and helps to improve the demonstration aperture opening ratio.In detail, the part of data line in the image element structure and capacitance electrode overlaps so that the pixel electrode arrangement area increases.And on the sweep trace bearing of trend, the distance of adjacent pixel electrode can be not more than the live width of data line.Thus, the picture element array can have the high aperture opening ratio that shows.In addition, the part that the present invention can let capacitance electrode be overlapped in data line is wider than data line, to relax data line to cross-talk phenomenon that pixel electrode was caused.In other words, not only image element structure of the present invention and picture element array can have and highly show that aperture opening ratio more can have desirable display quality.
Though the present invention discloses as above with embodiment; Right its is not in order to limit the present invention; Has common knowledge the knowledgeable in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (14)
1. an image element structure is characterized in that, comprising:
The one scan line;
One capacitance electrode electrically is independent of this sweep trace, and this capacitance electrode comprises a first and at least one second portion, this first and this second portion along different directions extend and this first the bearing of trend with this sweep trace is identical in fact;
One data line, staggered and electrically be independent of this sweep trace with this sweep trace, and this data line is overlapped in this second portion of this capacitance electrode;
One driving component electrically connects this sweep trace and this data line; And
One pixel electrode electrically connects this driving component and covers this data line and this capacitance electrode.
2. image element structure according to claim 1 is characterized in that: wherein this first of this capacitance electrode and this second portion are connected to each other, and this first and this second portion are divided into four orientation zones with this pixel electrode.
3. image element structure according to claim 2 is characterized in that: wherein this first and this second portion connect into cross.
4. image element structure according to claim 1 is characterized in that: wherein this pixel electrode more covers this sweep trace.
5. image element structure according to claim 4; It is characterized in that: wherein the quantity of this at least one second portion is two; And wherein this second portion and this first link together, and this sweep trace and those second portions are divided into four orientation zones with this pixel electrode.
6. image element structure according to claim 1 is characterized in that: wherein this pixel electrode has a plurality of orientation slits.
7. image element structure according to claim 1 is characterized in that: wherein this data line is positioned at a center line of this pixel electrode in fact.
8. image element structure according to claim 1 is characterized in that: wherein the live width of this second portion is in fact greater than the live width of this data line.
9. a picture element array is characterized in that, comprising:
A plurality of image element structures, respectively this image element structure comprises:
The one scan line;
One capacitance electrode electrically is independent of this sweep trace, and this capacitance electrode comprises a first and at least one second portion, this first and this second portion along different directions extend and this first the bearing of trend with this sweep trace is identical in fact;
One data line, staggered and electrically be independent of this sweep trace with this sweep trace, and this data line is overlapped in this second portion of this capacitance electrode;
One driving component electrically connects this sweep trace and this data line; And
One pixel electrode electrically connects this driving component and covers this data line and this capacitance electrode, wherein on the bearing of trend of those sweep traces, and the distance of being separated by between the adjacent pixel electrode.
10. picture element array according to claim 9 is characterized in that: wherein this distance is not more than the live width of those data lines.
11. picture element array according to claim 9 is characterized in that: wherein this first of this capacitance electrode and this second portion are connected to each other, and this first and this second portion are divided into four orientation zones with this pixel electrode.
12. picture element array according to claim 11 is characterized in that: wherein this first and this second portion connect into cross.
13. picture element array according to claim 9 is characterized in that: wherein this pixel electrode more covers this sweep trace.
14. picture element array according to claim 13; It is characterized in that: wherein the quantity of this at least one second portion is two; And wherein this second portion and this first link together, and this sweep trace and those second portions are divided into four orientation zones with this pixel electrode.
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| CN2010102822498A CN101976007B (en) | 2010-09-14 | 2010-09-14 | Pixel structure and pixel array |
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| CN2010102822498A CN101976007B (en) | 2010-09-14 | 2010-09-14 | Pixel structure and pixel array |
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| CN101976007B true CN101976007B (en) | 2012-05-23 |
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| TWI597552B (en) | 2012-01-20 | 2017-09-01 | 群康科技(深圳)有限公司 | Pixel structures |
| CN105938282A (en) * | 2016-06-22 | 2016-09-14 | 深圳市华星光电技术有限公司 | Liquid crystal display pixel structure and liquid crystal display device |
| CN106526988B (en) * | 2016-11-07 | 2019-12-03 | 惠科股份有限公司 | Display array substrate pixel structure and display device applying same |
| CN118011700A (en) * | 2019-06-26 | 2024-05-10 | 群创光电股份有限公司 | Display apparatus |
| CN110824790A (en) * | 2019-10-22 | 2020-02-21 | 深圳市华星光电技术有限公司 | Pixel electrode |
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| CN1800917A (en) * | 2005-01-03 | 2006-07-12 | 三星电子株式会社 | Array substrate and display panel having the same |
| CN101154003A (en) * | 2006-09-28 | 2008-04-02 | 三星电子株式会社 | Display device having improved substrate and method of manufacture |
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| KR20020042898A (en) * | 2000-12-01 | 2002-06-08 | 구본준, 론 위라하디락사 | Liquid crystal display device and method of manufacturing thereof |
| KR100887671B1 (en) * | 2002-12-23 | 2009-03-11 | 엘지디스플레이 주식회사 | Array substrate for LCD and method for fabricating of the same |
| KR100961695B1 (en) * | 2003-06-12 | 2010-06-10 | 엘지디스플레이 주식회사 | An array substrate for In-Plane switching mode LCD and method of the same |
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| CN1800917A (en) * | 2005-01-03 | 2006-07-12 | 三星电子株式会社 | Array substrate and display panel having the same |
| CN101154003A (en) * | 2006-09-28 | 2008-04-02 | 三星电子株式会社 | Display device having improved substrate and method of manufacture |
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Effective date of registration: 20170808 Address after: Third, fourth floor, 1 floor, 6 West Road, Mawei West Road, Mawei District, Fujian, Fuzhou Co-patentee after: Chunghwa Picture Tubes Ltd. Patentee after: CPT DISPLAY TECHNOLOGY (SHENZHEN)CO., LTD. Address before: 350015 No. 1 Xingye Road, Mawei Science Park, Fujian, Fuzhou Co-patentee before: Chunghwa Picture Tubes Ltd. Patentee before: Fujian Huaying Display Technology Co., Ltd. |
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