CN101968666A - Temperature regulating device for photovoltaic polycrystalline silicon ingot casting furnace - Google Patents
Temperature regulating device for photovoltaic polycrystalline silicon ingot casting furnace Download PDFInfo
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- CN101968666A CN101968666A CN 201010260284 CN201010260284A CN101968666A CN 101968666 A CN101968666 A CN 101968666A CN 201010260284 CN201010260284 CN 201010260284 CN 201010260284 A CN201010260284 A CN 201010260284A CN 101968666 A CN101968666 A CN 101968666A
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Abstract
The invention relates to a temperature regulating device for a photovoltaic polycrystalline silicon ingot casting furnace, belonging to the technical field of automatic temperature control of the photovoltaic polycrystalline silicon ingot casting furnace. The device comprises a temperature control thermoelectric couple mounted on the photovoltaic polycrystalline silicon ingot casting furnace, and an optical pyrometer, a main controller, an analog quantity output module, a power controller and an alternating current power source which are arranged on the photovoltaic polycrystalline silicon ingot casting furnace, wherein the temperature output ends of the temperature control thermoelectric couple and the optical pyrometer are respectively connected with the input end of the main controller; the output end of the main controller is connected with the input end of the power controller via the analog quantity output module; the output end of the power controller is connected with a heater of the photovoltaic polycrystalline silicon ingot casting furnace; and the input end of the alternating current power source is connected with another input end of the power controller. The temperature is controlled by the optical pyrometer and the thermoelectric couple at the same time. The invention has the advantages of convenient operation, reliable temperature control, high precision and the like, and greatly improves the polycrystalline silicon casting quality.
Description
Technical field
The invention belongs to the temperature technical field of automatic control of photovoltaic polycrystalline silicon ingot or purifying furnace, the temperature regulating device when relating to the inefficacy of photovoltaic polycrystalline silicon ingot or purifying furnace temperature-control heat couple.
Background technology
Sun power is most important basic power source in the various regenerative resources, and biomass energy, wind energy, ocean energy, water energy etc. are all from sun power, and in a broad sense, sun power comprises above various regenerative resource.Sun power is a kind of as regenerative resource, then is meant the direct conversion and the utilization of sun power.By conversion equipment solar radiant energy is converted to the solar energy utilization technique that belongs to of heat energy utilization, utilize the solar energy thermal-power-generating that is called that heat energy generates electricity again; Belong to the solar energy generation technology to what solar radiant energy converted utilization of power to by photoelectric conversion device, photoelectric conversion device normally utilizes the photovoltaic effect principle of semiconductor devices (solar cell) to carry out opto-electronic conversion, therefore claims solar-photovoltaic technology again.
The United Nations has held a series of summit meetings that have the various countries leader to participate in, and discussion and formulation world's sun power strategic planning, international sun power pact are set up international sun power fund etc., promote the development and use of global solar and regenerative resource.Development and use sun power and regenerative resource become a big theme and the common action of international community, become the important content that various countries formulate the strategy of sustainable development.In State Commission for Restructuring the Economic Systems is listed research and development sun power and renewable energy technologies always by Chinese Government, has promoted the development of sun power and renewable energy technologies and industry greatly.Solar utilization technique is being researched and developed, is being commercially produced, all obtaining tremendous development aspect the market development, becomes fast, one of the new industry of stable development.
Because silicon materials account for the overwhelming majority in the solar cell cost, the cost that reduces silicon materials is the key of photovoltaic application.The polycrystalline silicon ingot casting technology is one of important channel that reduces the solar cell cost, and this technology has been saved expensive crystal-pulling process, also can use than the silicon of low-purity and make to throw furnace charge, and material and power consumption aspect are all economized.Casting ingot process mainly contains two kinds of directional solidification method and casting methods.Directional solidification method is that the silicon material is placed in the crucible in addition fusion, and the pulling speed of controlling stay-warm case then forms low-temperature receiver to cause certain thermograde from crucible bottom, makes solid-liquid interface move up and form crystal ingot from crucible bottom.
The temperature-control heat couple of photovoltaic polycrystalline silicon ingot or purifying furnace is the DIE Temperature detection part, because the polycrystalline silicon ingot or purifying furnace working temperature is up to 1550 ℃, about 60 hours work periods, temperature-control heat couple is required harsh, temperature-control heat couple often takes place lost efficacy, the problem that causes the polycrystal silicon ingot of whole stove to be scrapped.
A kind of " a kind of polycrystalline silicon ingot or purifying furnace temperature-control heat couple fault handling method " by name, the patent No. is: 200810030830.3 patent disclosure a kind of polycrystalline silicon ingot or purifying furnace temperature-control heat couple fault handling method, after temperature-control heat couple breaks down, convert temperature-control heat couple closed loop thermal control heating power to the open Loop Power control heating power.Its implementation is: when temperature-control heat couple is normally moved, store the temperature profile data of well heater at set intervals, when temperature-control heat couple breaks down, call the temperature profile data of stove storage, follow the tracks of the track of heating power setting value wherein, directly the heating power of control heater is realized the open loop temperature control.This patent has no idea to consider the every stove of the polycrystalline silicon ingot or purifying furnace otherness of working time, and the working time of two stoves and operation process are identical very difficult, and the temperature controlled temperature control effect of open loop is also undesirable.
Leucoscope is a kind of standard configuration on the existing photovoltaic polycrystalline silicon ingot or purifying furnace, is a kind of auxiliary temperature survey sensor, is used for measuring silicon liquid surface temperature, assists to judge whether polycrystalline silicon material thoroughly melted in the melting stage.Do not participate in power control to the well heater of stove.
Summary of the invention
The objective of the invention is to propose a kind of temperature regulating device of photovoltaic polycrystalline silicon ingot or purifying furnace, adopt leucoscope and thermopair to carry out temperature control simultaneously for overcoming the weak point of prior art.The present invention has easy to operate, and characteristics such as temperature control is reliable, precision height greatly improve the polycrystalline silicon ingot casting quality.
The inventive system comprises the temperature-control heat couple that is installed on the photovoltaic polycrystalline silicon ingot or purifying furnace, it is characterized in that, also comprise leucoscope, master controller, analog output module, power controller and AC power on the photovoltaic polycrystalline silicon ingot or purifying furnace; Wherein, the temperature output terminal of described temperature-control heat couple and leucoscope links to each other with the input end of master controller respectively, the output terminal of master controller links to each other with the input end of power controller by analog output module, the output terminal of power controller links to each other with the well heater of photovoltaic polycrystalline silicon ingot or purifying furnace, and the input end of described AC power also links to each other with another input end of power controller.
Characteristics of the present invention and beneficial effect:
The present invention adopts the leucoscope of polycrystalline silicon ingot or purifying furnace and thermopair to carry out temperature control simultaneously, after temperature-control heat couple breaks down, temperature-control heat couple closed loop thermal control transformation is become the control of leucoscope closed loop thermal.The present invention has simple to operate, and temperature control is reliable, precision is high, greatly improves the polycrystalline silicon ingot casting quality.
Leucoscope of the present invention adopts the non-cpntact measurement temperature, and measurement performance is stable, uses leucoscope to have when temperature control and is difficult for losing efficacy, and temperature control precision meets the demands, debugs, adjusts conveniently, improves the polycrystalline silicon ingot casting quality.
Description of drawings
Fig. 1 is a photovoltaic polycrystalline silicon ingot or purifying furnace temperature regulating device structured flowchart of the present invention;
Fig. 2 is a photovoltaic polycrystalline silicon ingot or purifying furnace temperature regulating device example structure synoptic diagram of the present invention.
Embodiment
The temperature regulating device of the photovoltaic polycrystalline silicon ingot or purifying furnace that the present invention proposes reaches embodiment in conjunction with the accompanying drawings and is described in detail as follows:
The temperature regulating device structure of photovoltaic polycrystalline silicon ingot or purifying furnace of the present invention as shown in Figure 1.
This device comprises the temperature-control heat couple that is installed on the photovoltaic polycrystalline silicon ingot or purifying furnace, it is characterized in that, also comprises leucoscope, master controller, analog output module, power controller and AC power on the photovoltaic polycrystalline silicon ingot or purifying furnace; Wherein, the temperature output terminal of described temperature-control heat couple and leucoscope links to each other with the input end of master controller respectively, the output terminal of master controller links to each other with the input end of power controller by analog output module, the output terminal of power controller links to each other with the well heater of photovoltaic polycrystalline silicon ingot or purifying furnace, and the input end of described AC power also links to each other with another input end of power controller.
Principle of work of the present invention:
At first write down the corresponding relation of temperature T 1 with the temperature T 2 of leucoscope 2 measurements of temperature-control heat couple 1 measurement, and record thermocouple 1 is measured the relation of the heating power P (obtaining by power controller) of temperature T 1 and well heater.
Master controller adopts temperature-control heat couple 1 as temperature closed loop control when temperature-control heat couple 1 operate as normal, and the output data that is about to temperature-control heat couple 1 realizes that power controller regulates and control the power of the well heater of photovoltaic polycrystalline silicon ingot or purifying furnace; If the temperature-control heat couple 1 of judging master controller breaks down (being that temperature-control heat couple 1 reading occurs unusually), the temperature data that master controller is then measured leucoscope 2 is controlled the closed loop thermal of the well heater of photovoltaic polycrystalline silicon ingot or purifying furnace by the relation realization power controller of T2-T1-P.The above-mentioned course of work realizes by the temperature control program that is installed in advance in the master controller, and this control program is compiled for those skilled in the art adopt conventional programming instrument and technology.
The example structure of apparatus of the present invention comprises as shown in Figure 2: temperature-control heat couple 1, leucoscope 2, L shaped fixed body 4, sighting tube 5, O-ring seal 9; Also comprise master controller, analog output module, power controller and AC power (not shown); Wherein, temperature-control heat couple 1 and leucoscope 2 are installed in respectively on the polycrystalline silicon ingot casting furnace body 8, and temperature-control heat couple 1 is passed the hole on the body of heater 8 and the hole of top warming plate 6, insert in the furnace chamber, use as normal temperature control; L shaped fixed body 4 is fixed on the furnace roof 3, leucoscope 2 is fixed on the L shaped fixed body 4, sighting tube 5 is arranged in the body of heater of leucoscope 2 vertical lower, the upper end of sighting tube 5 links with body of heater 8 by O-ring seal 9, the hole of top warming plate 6 is passed in the lower end of sighting tube 5, until the upper edge that extends to crucible cover plate 7.The temperature output terminal of temperature-control heat couple and leucoscope links to each other with the input end of master controller respectively, the output terminal of master controller links to each other with the input end of power controller by analog output module, the output terminal of power controller links to each other with the well heater of photovoltaic polycrystalline silicon ingot or purifying furnace, and the input end of described AC power also links to each other with another input end of power controller.
The specific embodiment of each parts of this device for carrying out said is respectively described below:
Temperature-control heat couple 1 of the present invention is the standard configuration of polycrystalline silicon ingot or purifying furnace;
Leucoscope 2 of the present invention is the standard configuration of polycrystalline silicon ingot or purifying furnace, generally adopts the MarathonMM series leucoscope of Fiuke Co., Ltd, has aiming function and data preprocessing function, and is stable and reliable for performance.
Master controller of the present invention adopts the PAC LCM4 controller of OPT022 company, and temperature control program is installed in the master controller in advance;
Analog output module: the analog output module model is AOV25, and AOV25 receives the digital signal of the power controlling controller that master controller sends, and converts this digital signal to analog signals and export to power controller, realizes power control.
Power controller of the present invention adopts the PF3 series three phase power controller of METEK company.
Well-known device that other parts of the present invention are this area or employing known technology means are made.
Claims (2)
1. the temperature regulating device of a photovoltaic polycrystalline silicon ingot or purifying furnace, this device comprises the temperature-control heat couple that is installed on the photovoltaic polycrystalline silicon ingot or purifying furnace, it is characterized in that, also comprise leucoscope, master controller, analog output module, power controller and AC power on the photovoltaic polycrystalline silicon ingot or purifying furnace; Wherein, the temperature output terminal of described temperature-control heat couple and leucoscope links to each other with the input end of master controller respectively, the output terminal of master controller links to each other with the input end of power controller by analog output module, the output terminal of power controller links to each other with the well heater of photovoltaic polycrystalline silicon ingot or purifying furnace, and the input end of described AC power also links to each other with another input end of power controller.
2. install according to claim 1, it is characterized in that, also comprise sighting tube, described leucoscope is fixed on the photovoltaic polycrystalline silicon ingot casting furnace roof, and sighting tube places in the furnace roof of leucoscope vertical lower, and the upper end of sighting tube links by O-ring seal and body of heater, the hole of furnace top insulation plate is passed in the lower end of sighting tube, the hole on the furnace roof and the hole of top warming plate are passed in the upper edge of crucible cover plate in extending to stove, described temperature-control heat couple, insert in the furnace chamber.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010260284 CN101968666A (en) | 2010-08-23 | 2010-08-23 | Temperature regulating device for photovoltaic polycrystalline silicon ingot casting furnace |
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| CN 201010260284 CN101968666A (en) | 2010-08-23 | 2010-08-23 | Temperature regulating device for photovoltaic polycrystalline silicon ingot casting furnace |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102425003A (en) * | 2011-12-20 | 2012-04-25 | 北京京仪世纪电子股份有限公司 | Method, device and system for compensating thermocouple temperature in polysilicon ingot furnace operation |
| CN102677165A (en) * | 2012-04-13 | 2012-09-19 | 浙江精功科技股份有限公司 | Detecting method and corresponding detecting device of ingot molten state of polycrystalline silicon ingot furnace |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101311342A (en) * | 2008-03-17 | 2008-11-26 | 中国电子科技集团公司第四十八研究所 | Fault handling process for temperature-controlling thermal couple of polysilicon ingot furnace |
| CN101319366A (en) * | 2008-05-19 | 2008-12-10 | 北京京运通科技有限公司 | Automatic control system and method for polysilicon ingot furnace |
| WO2009150152A2 (en) * | 2008-06-13 | 2009-12-17 | Luis Maria Antonello | System and process for the production of polycrystalline silicon for photovoltaic use |
-
2010
- 2010-08-23 CN CN 201010260284 patent/CN101968666A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101311342A (en) * | 2008-03-17 | 2008-11-26 | 中国电子科技集团公司第四十八研究所 | Fault handling process for temperature-controlling thermal couple of polysilicon ingot furnace |
| CN101319366A (en) * | 2008-05-19 | 2008-12-10 | 北京京运通科技有限公司 | Automatic control system and method for polysilicon ingot furnace |
| WO2009150152A2 (en) * | 2008-06-13 | 2009-12-17 | Luis Maria Antonello | System and process for the production of polycrystalline silicon for photovoltaic use |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102425003A (en) * | 2011-12-20 | 2012-04-25 | 北京京仪世纪电子股份有限公司 | Method, device and system for compensating thermocouple temperature in polysilicon ingot furnace operation |
| CN102677165A (en) * | 2012-04-13 | 2012-09-19 | 浙江精功科技股份有限公司 | Detecting method and corresponding detecting device of ingot molten state of polycrystalline silicon ingot furnace |
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Application publication date: 20110209 |