CN101968664A - Surface temperature signal fast generating device - Google Patents
Surface temperature signal fast generating device Download PDFInfo
- Publication number
- CN101968664A CN101968664A CN 201010298099 CN201010298099A CN101968664A CN 101968664 A CN101968664 A CN 101968664A CN 201010298099 CN201010298099 CN 201010298099 CN 201010298099 A CN201010298099 A CN 201010298099A CN 101968664 A CN101968664 A CN 101968664A
- Authority
- CN
- China
- Prior art keywords
- field effect
- effect transistor
- links
- resistance
- semiconductor cooler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Devices That Are Associated With Refrigeration Equipment (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a surface temperature signal fast generating device which is provided with a semiconductor refrigerator, a water/gas heat exchange device, an infrared sensor, liquid crystal, an upper computer and a control circuit, wherein as a temperature signal generating element, the semiconductor refrigerator is formed by a plurality of groups of P-N structures and has a cold end surface and a hot end surface; the water/gas heat exchange device comprises water/gas two-path exchange systems and is provided with an electromagnetic valve, a water pump and an air pump which are connected with a control signal output by a control circuit; the infrared sensor is assembled above the semiconductor refrigerator, acquires the surface temperature of the semiconductor refrigerator and outputs the surface temperature to the control circuit; the liquid crystal displays the surface temperature of the semiconductor refrigerator in real time; and simultaneously, a control chip serial port sends temperature data to the upper computer in real time so as to lead the upper computer to send relevant instruments to a control chip in the control circuit for control according to the temperature change.
Description
Technical field
The present invention relates to the quick generating means of a kind of surface temperature signal, this device can the random waveform mode reproduce the object surfaces temperature signal fast, belongs to technical field of measurement and test.
Background technology
Temperature is the physical quantity that characterizes the cold and hot degree of object, is the important parameter that is adopted in the fields such as chemical industry, scientific research and production.The measurement of temperature and control are the important means that guarantees the normal operation in control field.Along with the develop rapidly of science and technology, the observing and controlling temperature signal seems more important, and increasing in addition occasion need produce temperature signal.Producing surface temperature signal has several different methods, can adopt water jet, resistance heated filament, semiconductor cooler etc.The water jet method realizes that by the water that mixes different temperatures the surface temperature of target object changes, system complex, and the accurate temperature controller response speed is poor.The resistance heat wire method is difficult to the control rate of temperature fall.
Semiconductor refrigerating is named thermoelectric cooling or thermoelectric cooling again.Semiconductor material has extraordinary thermoelectric energy transfer characteristic, and refrigerating function is arranged by direct current the time, therefore is called thermoelectric cooling.Thermoelectric cooling is a thermoelectric effect, mainly is Peltier effect.Peltier effect is exactly an electric current when flowing through the interface of two kinds of different conductors, will absorb heat from the external world, or emit heat to the external world.A P-type semiconductor and a N-type semiconductor are stacked together, after the energising, can on the joint of P-type semiconductor and N-type semiconductor, produce the exchange of the temperature difference and heat, form hot junction and cold junction.When changing electric power polarity, cold and hot end can exchange fast.In the time of by big electric current, and under the good situation of hot-side heat dissipation, cold junction can be lowered the temperature apace.The effect that many group PN junctions are cascaded and can reach fast-refrigerating, heat.
External surface signal generating means mainly concentrates on and produces the thermograde signal, is mainly used in temperature sense of touch occasion.The H.Ho of Massachusetts Institute of Technology (MIT) etc. has developed the tactile representation device of a cover based semiconductor refrigerator, can distinguish the significant material of hot attribute difference according to the variation of thermograde, but this device adopts thermistor as temperature sensing device, is difficult to reflect that the real time temperature of semiconductor cooler changes.
Domestic temperature signal generating means mainly is to close at one to produce steady temperature in the chamber, is applicable to the constant temperature occasion.Use electrothermal resistance silks such as Dong Hui have been realized a cavity constant temperature generating means, and in 0-200 ℃ of scope, the measuring accuracy of this device can reach ± 0.1 ℃, control accuracy can reach ± and 0.4 ℃, but constant temperature time is longer.Domestic patent about waveform generator is few at present, does not also have the relevant patent of surface temperature signal generating means.The quick generating means of surface temperature signal provided by the invention has been used for temperature sense of touch occasion, also can be used for the dynamic characteristic measuring of instrument, the longevity test of product etc.
Produce the temperature waveform and can be used for temperature sense of touch occasion, in virtual reality technology and Robotics, the temperature sense of touch is played a booster action at haptic system.When the REMOTE MACHINE hand touches an object with the staff temperature, far-end body surface and mechanical hand generation heat interchange, temperature changes, apparatus of the present invention can produce this temperature changing process at near-end, the variation that can allow the near-end staff feel that far-end body surface temperature takes place, the sense of reality and the feeling of immersion of raising virtual reality technology.
Summary of the invention
At prior art, the present invention proposes a kind of quick generating means that produces surface temperature signal.This device can reproduce the temperature variation of body surface fast, install accessible maximum temperature rate and certain temperature control algorithm according to this, as switch control algolithm or pid algorithm, can produce the surface temperature signal of function waveforms such as sine wave, square wave, triangular wave, sawtooth wave and random waveform.The cycle of waveform and amplitude are all adjustable, have the waveform memory function, and can show kind, cycle and the amplitude of output waveform in real time.
The present invention adopts following technical scheme: the quick generating means of a kind of surface temperature signal, it is characterized in that: be provided with and comprise semiconductor cooler, heat interchanger, infrared sensor, liquid crystal, host computer and control circuit, semiconductor cooler is as the temperature signal generating device, system becomes by being connected with galvanic P-N structure, has hot and cold two end faces; Heat interchanger comprises water, gas two-path switching system as the radiating element of semiconductor cooler, is respectively equipped with solenoid valve and pump in water, the gas two-path switching system, and solenoid valve is connected with the control signal of pump with control circuit output; Infrared temperature sensor is arranged on the semiconductor cooler top, the surface temperature of gathering semiconductor cooler, and liquid crystal shows the surface temperature of semiconductor cooler in real time; Contain power circuit in the control circuit, modulate circuit, bridge circuit and regulating circuit and control chip, infrared sensor inputs to the semiconductor cooler surface temperature of gathering to be provided with and comprises analog to digital conversion, amplify, the modulate circuit of filtering, modulate circuit exports digital signal to control chip, control chip is provided with serial ports and is connected with host computer, send temperature data in real time to host computer, host computer sends instructions to control chip according to variation of temperature, control chip is according to the instruction of the host computer control heat interchanger water that transmits control signal, the unlatching of corresponding solenoid valve and pump or close in the gas two-path switching system is to regulate the overall thermal capacity of semiconductor cooler and heat interchanger; Control chip also transmits control signal to regulating circuit according to the instruction of host computer, and regulating circuit output is connected semiconductor cooler electric power polarity two ends, is used to regulate the semiconductor cooler both end voltage, to regulate the heating-cooling speed of semiconductor cooler; Control chip output also transmits control signal to bridge circuit according to the instruction of host computer, bridge circuit output heats, freezes semiconductor cooler and closes the switching of three kinds of mode of operations, by pid algorithm, produce the function waveform surface temperature signal that comprises sine wave, square wave, triangular wave, sawtooth wave.
Described bridge circuit is provided with 9 field effect transistor, 4 diodes, 4 resistance and 1 electrochemical capacitor, the grid of first field effect transistor links to each other with an input/output port of control chip as the input end of semiconductor voltage reversing, the drain electrode of first field effect transistor links to each other with an end of first resistance, the first resistance other end links to each other the source ground of first field effect transistor with+5V voltage; The grid of second field effect transistor links to each other with the drain electrode of first field effect transistor, the drain electrode of second field effect transistor links to each other with an end of the 3rd resistance, the 3rd resistance other end and electrochemical capacitor anodal and+16V voltage links to each other electrochemical capacitor minus earth, the source ground of second field effect transistor; The input end that the grid of the 3rd field effect transistor is closed as semiconductor voltage links to each other the source ground of the 3rd field effect transistor with another input/output port of control chip; The grid of the 4th field effect transistor links to each other with an end of second resistance, and the other end of second resistance links to each other with+5V voltage, and the drain electrode of the 4th field effect transistor links to each other with the negative terminal of semiconductor cooler TEC, and the source electrode of the 4th field effect transistor links to each other with the drain electrode of the 3rd field effect transistor; The grid of the 5th field effect transistor links to each other with an end of the 4th resistance, and the 4th resistance other end links to each other with the positive pole of+16V voltage and electrochemical capacitor, and the source electrode of the 5th field effect transistor links to each other with the negative terminal of semiconductor cooler TEC; The grid of the 6th field effect transistor links to each other with the drain electrode of second field effect transistor, and the drain electrode of the 6th field effect transistor links to each other with the drain electrode of the 5th field effect transistor, and the source electrode of the 6th field effect transistor links to each other with the anode of semiconductor cooler TEC; The grid of the 7th field effect transistor links to each other with the drain electrode of first field effect transistor, and the drain electrode of the 7th field effect transistor links to each other with the anode of semiconductor cooler TEC, and the source electrode of the 7th field effect transistor links to each other with the drain electrode of the 3rd field effect transistor; The grid of the 8th field effect transistor links to each other with the grid of the 4th field effect transistor, and the drain electrode of the 8th field effect transistor links to each other with the grid of the 5th field effect transistor, the source ground of the 8th field effect transistor; The grid of the 9th field effect transistor links to each other with the drain electrode of first field effect transistor, and the drain electrode of the 9th field effect transistor links to each other with the grid of the 8th field effect transistor, the source ground of the 9th field effect transistor; In 4 diodes, first, second two diode series connection, the one 2 utmost point pipe negative terminal is connected with the drain electrode of the 5th and the 6th field effect transistor, and the 22 utmost point pipe anode is connected with the source electrode of the 4th and the 7th field effect transistor, links to each other with the anode of semiconductor cooler TEC between first, second two diodes; Three, the 4 two diode series connection, the 32 utmost point pipe negative terminal is connected with the drain electrode of the 5th and the 6th field effect transistor, the 42 utmost point pipe anode is connected with the source electrode of the 4th and the 7th field effect transistor, links to each other with the negative terminal of semiconductor cooler TEC between the 3rd, the 4 two diode;
Described regulating circuit is provided with two stage amplifer, five resistance, two electric capacity and a triode, the PWM INPUT signal that is produced different duty by single-chip microcomputer links to each other with an end of the 7th resistance, the other end of the 7th resistance links to each other with an end of the 8th resistance and an end of first electric capacity, the first electric capacity other end ground connection, the other end of the 8th resistance links to each other with the positive input terminal of first order amplifier, the output signal of first order amplifier is delivered to the positive input terminal of second level amplifier, the output signal of first order amplifier also links to each other with the 6th resistance one end, the 6th resistance other end connects the 5th resistance one end, the 5th resistance other end ground connection, be connected the negative input end of first order amplifier between the 6th resistance and the 5th resistance, the positive power source terminal connection+12V voltage of first order amplifier and connect second electric capacity after ground connection; The negative power end ground connection of first order amplifier; The output terminal of second level amplifier connects an end of the 9th resistance, the other end of the 9th resistance connects transistor base, transistor collector connects+12V voltage, and the negative terminal of first, the 3 two diode is connected in the negative input end of transistor emitter and first order amplifier and the bridge circuit.
Compared with prior art, advantage of the present invention and beneficial effect are:
1, surface temperature rate of change fast;
2, can produce the surface temperature signal of random waveform
3, make water/gas heat-exchanger rig improve the temperature rate of surface temperature signal;
4, infrared sensor can be realized high speed, high precision non-contact type temperature measurement;
5, this device can be used for the quick observing and controlling of body surface temperature signal, can produce the surface temperature signal of function waveforms such as sine wave, square wave, triangular wave, sawtooth wave and random waveform fast, the temperature dynamic characteristic that is more conducive to observe object.
Description of drawings
Fig. 1 is the partial structurtes figure of apparatus of the present invention;
Fig. 2, the 3rd, apparatus of the present invention system chart;
Fig. 4 is the schematic diagram of apparatus of the present invention bridge circuit and regulating circuit;
Fig. 5 is the schematic diagram of apparatus of the present invention water/gas heat-exchanger rig.
Embodiment
Referring to Fig. 1, a kind of quick generating means that produces surface temperature signal is provided with pipeline 1, semiconductor cooler 2,3,4,5, and infrared sensor 6, water inlet 7, heat radiating metal 8 is formed.Surface temperature signal is created in the upper surface of semiconductor cooler 4, by the temperature of infrared sensor observing and controlling semiconductor cooler.Logical liquid or gas in the pipeline improve heating of semiconductor cooler and freeze speed in the hope of the thermal capacity of modifier.
Referring to Fig. 2, adopt semiconductor cooler as the temperature signal generating device, liquid crystal shows the surface temperature of semiconductor cooler in real time, infrared sensor is gathered the surface temperature of semiconductor cooler and is inputed to control circuit, send temperature data in real time so that host computer sends dependent instruction to control circuit according to variation of temperature by serial ports to host computer simultaneously, control circuit is controlled in water/gas heat-exchanger rig according to the instruction transmission associated control signal of host computer, and water/gas heat-exchanger rig is according to the overall thermal capacity of this control signal with adjusting semiconductor cooler and heat-exchange tube.Control circuit carries out the switching of three kinds of mode of operations to semiconductor cooler: heat, freeze and close.
Referring to Fig. 3, control circuit has comprised control chip, power circuit, modulate circuit, regulating circuit, bridge circuit etc.Power circuit provides power supply for control chip and regulating circuit, modulate circuit the signal of sensor output amplify, processing such as filtering and offer control chip, regulating circuit is used to regulate the semiconductor cooler both end voltage, and bridge circuit is used to switch the polarity and the break-make of semiconductor cooler both end voltage.
Referring to Fig. 4, bridge circuit has 9 field effect transistor, wherein:
The grid G of field effect transistor 1 is DIRECTION end, and the drain D of field effect transistor 1 links to each other with an end of resistance R 1, and resistance R 1 other end links to each other the source S ground connection of field effect transistor 1 with+5V voltage;
The grid G of field effect transistor 2 links to each other with the drain D of field effect transistor 1, the drain D of field effect transistor 2 links to each other with an end of resistance R 3, and resistance R 3 other ends link to each other with the positive pole of electrochemical capacitor C3, should end resistance R 3 link to each other with+16V voltage simultaneously, capacitor C 3 minus earths, the source S ground connection of field effect transistor 2;
The grid G of field effect transistor 3 is the ENABLE end, and the drain D of field effect transistor 3 links to each other with the source S of field effect transistor 4, the source S ground connection of field effect transistor 3;
The grid G of field effect transistor 4 links to each other with an end of resistance R 2, and the other end of resistance R 2 links to each other with+5V voltage, and the drain D of field effect transistor 4 links to each other with the negative terminal of semiconductor cooler TEC, and the source S of field effect transistor 4 links to each other with the drain D of field effect transistor 3;
The grid G of field effect transistor 5 links to each other with an end of resistance R 4, resistance R 4 other ends link to each other with+16V voltage, resistance R 4 should link to each other with the positive pole of electrochemical capacitor C3 by end simultaneously, capacitor C 3 minus earths, the drain D of field effect transistor 5 links to each other with the end of oppisite phase of OPIB, and the source S of field effect transistor 5 links to each other with the negative terminal of semiconductor cooler TEC;
The grid G of field effect transistor 6 links to each other with the drain D of field effect transistor 2, and the drain D of field effect transistor 6 links to each other with the end of oppisite phase of OPIB, and the source S of field effect transistor 6 links to each other with the anode of semiconductor cooler TEC;
The grid G of field effect transistor 7 links to each other with the drain D of field effect transistor 1, the drain D of field effect transistor 7 links to each other with the anode of semiconductor cooler TEC, the source S of field effect transistor 7 links to each other with the drain D of field effect transistor 3, the tie point of D1 and D2 connects an end of semiconductor cooler, and the tie point of D3 and D4 connects the other end of semiconductor cooler.；
The grid G of field effect transistor 8 links to each other with the grid G of field effect transistor 4, and the drain D of field effect transistor 8 links to each other with the grid G of field effect transistor 5, the source S ground connection of field effect transistor 8;
The grid G of field effect transistor 9 links to each other with the drain D of field effect transistor 1, and the drain D of field effect transistor 9 links to each other with the grid G of field effect transistor 4, the source S ground connection of field effect transistor 9;
In 4 diodes, two diode series connection of D1, D2, the D1 negative terminal is connected with the drain electrode of field effect transistor 5,6, and the D2 anode is connected with the source electrode of field effect transistor 4,7, links to each other with the anode of semiconductor cooler TEC between two diodes of D1, D2; Two diode series connection of D3, D4, the D3 negative terminal is connected with the drain electrode of field effect transistor 5,6, and the D4 anode is connected with the source electrode of field effect transistor 4,7, links to each other with the negative terminal of semiconductor cooler TEC between two diodes of D3, D4;
Described regulating circuit is provided with two stage amplifer, five resistance, two electric capacity and a triode, the PWM INPUT signal that is produced different duty by single-chip microcomputer links to each other with an end of resistance R 7, the other end of resistance R 7 links to each other with an end of resistance R 8 and an end of capacitor C 1, capacitor C 1 other end ground connection, the other end of resistance R 8 links to each other with the positive input terminal of first order amplifier OPIA, the output signal of first order amplifier OPIA is delivered to the positive input terminal of second level amplifier OPIB, the output signal of first order amplifier also links to each other with resistance R 6 one ends, resistance R 6 other ends connect resistance R 5 one ends, resistance R 5 other end ground connection, be connected the negative input end of first order amplifier between resistance R 6 and the resistance R 5, the positive power source terminal connection+12V voltage of first order amplifier and connection capacitor C 2 back ground connection; The negative power end ground connection of first order amplifier; The output terminal of second level amplifier OPIB connects an end of resistance R 9, and the other end of resistance R 9 connects transistor base, and the negative terminal that this amplifying signal is fed back to second level amplifier is to realize voltage stabilizing control., transistor collector connects+12V voltage, and the negative terminal of D1, two diodes of D3 is connected in the negative input end of transistor emitter and first order amplifier and the bridge circuit.
Referring to Fig. 5, the control water/gas heat-exchanger rig that provides in apparatus of the present invention.Before the experiment, control water/gas heat-exchanger rig makes air enter the heat-exchange tube cavity, and heat-exchange tube is made up of import, outlet, and the electrode direction at control semiconductor cooler two ends makes its refrigeration or heats.When semiconductor cooler need freeze, to send control signal 1 by controller solenoid valve 1 is opened, control signal 2 is closed solenoid valve 2, and control signal 3 is started water pump 10, and water enters the heat-exchange tube cavity, has improved the thermal capacity of heat-exchange tube cavity inside.When semiconductor cooler is heated, to send control signal 1 by controller solenoid valve 1 cuts out, control signal 2 is opened solenoid valve 2, and control signal 4 is started air pump 12, and air enters the heat-exchange tube cavity, has reduced the thermal capacity of heat-exchange tube cavity inside.(thermal capacity: system in a certain process, temperature raise or reduce by 1 ℃ absorb or liberated heat is called the thermal capacity of this system in this process, specific heat capacity is the thermal capacity of unit mass material, the specific heat capacity of air is 1030J (Kg a ℃) during room temperature
-1, it is 4200J (Kg ℃) that specific heat of water holds
-1).
The control approach embodiment of temperature waveform control algolithm:
One, changes the duty of semiconductor cooler
According to the refrigeration and the refrigeration principle of semiconductor cooler, semiconductor cooler can be three duties, promptly heat, freeze and close between realize switching, therefore must often switch polarity of voltage, the voltage break-make at semiconductor cooler two ends.Shown in bridge circuit circuit among Fig. 4, when DIRECTION (linking to each other with an input/output port of control chip) end is high level, the field effect transistor conducting, the anode V+ of TEC is a high level, the negative terminal V-of TEC is a low level.When the DIRECTION end is low level, the field effect transistor conducting, the anode V+ of TEC is a low level, the negative terminal V-of TEC is a high level.When ENABLE (linking to each other with an input/output port of control chip) end was low level, semiconductor cooler was closed.The difference that heats and freeze is that the polarity of electrode at semiconductor cooler two ends is just in time opposite, simultaneously for improving the refrigerating/heating speed of semiconductor cooler, when refrigeration, only opens solenoid valve 1 operation water pump makes water enter the heat-exchange tube cavity as shown in Figure 5, increased total thermal capacity of semiconductor cooler and heat-exchange tube, can dispel the heat better to the hot junction face of semiconductor cooler to improve the semiconductor cooler rate of temperature fall; When heating, only opens solenoid valve 2 operation air pumps make air enter the heat-exchange tube cavity, have reduced total thermal capacity of semiconductor cooler and heat-exchange tube, can improve the heating rate of semiconductor cooler; Close, be that the semiconductor cooler two ends do not apply voltage, when closing semiconductor cooler, be convenient to and freeze or when heating the duty of semiconductor cooler form contrast, be easy to observe semiconductor cooler temperature rate fast, the means of another kind of control can be provided to temperature control algorithm simultaneously, when the semiconductor refrigerating actuator temperature is higher than room temperature and closes, the semiconductor refrigerating actuator temperature falls back to room temperature fast, when the semiconductor refrigerating actuator temperature was lower than room temperature and closes, the semiconductor refrigerating actuator temperature went back up to room temperature fast.
Two, change the operating voltage that is added in the semiconductor cooler two ends
The present invention adopts the duty of regulating the PWM ripple recently to carry out pressure regulation, and the pwm signal of PWM_INPUT (linking to each other with an input/output port of control chip) input different duty and the bridge circuit of design are realized the voltage V on the semiconductor cooler
TecAdjustable continuously in 0～12V.Produce the PWM ripple of different duty by single-chip microcomputer, obtain the DC voltage of 0～5V, send into the in-phase end that outputs to second level amplifier after first order amplifier is amplified, utilize triode to carry out electric current again and amplify through low-pass filtering, and V
TecThe end of oppisite phase that feeds back to second level amplifier is to realize voltage stabilizing control.Because the maximum conducting electric current of triode can reach 25A, so this bridge circuit can bear the maximum operating currenbt of selected semiconductor cooler.
The principle of work of this device:
The upper surface of semiconductor cooler produces surface temperature signal, and infrared sensor is realized closed-loop control.The closed-loop control purpose is: 1, improve thermostatic control precision 2, improve the accuracy of temperature waveform output.The closed-loop control implementation procedure is as follows: infrared sensor is gathered the surface temperature of semiconductor cooler and is inputed to control circuit, and control circuit is according to this temperature value and according to the duty of desired temperature waveform output by certain temperature control algorithm adjusting semiconductor cooler.
The temperature waveform output of this device allows package unit can produce surperficial constant temperature signal earlier based on following process, carries out the output of temperature waveform on this basis.The output of thermostat temperature waveform is the basis of other temperature waveform outputs.
This device of process of hereinafter explaining constant temperature mode and the output of other temperature waveforms can be operated under two kinds of patterns:
1, constant temperature mode:
Need the constant temperature numerical value of control in the host computer input, and confirm to send a command to control chip.Control chip is according to the temperature of this temperature value control semiconductor cooler, and device begins to carry out constant temperature and sets.The original state semiconductor cooler is in room temperature, control chip output this moment ENABLE end is high level, switch opens, infrared sensor is monitored the semiconductor refrigerating actuator temperature in real time and is sent host computer, if the temperature value of setting and the difference of room temperature are Δ T, according to this difference and pid algorithm, can calculate magnitude of voltage and polarity that regulating circuit should be added in the semiconductor cooler two ends:
V
out＝P*ΔT+I*(T
n+T
n-1+...+T
0)+D*(T
n-T
n-1)
V
Out: output voltage
P: scale-up factor
I: integral coefficient
D: differential coefficient
T
n, T
N-1... .T
0: n, n-1 ... ..0 put temperature acquisition
Polarity for just, is negative less than 0 o'clock polarity greater than 0 o'clock polarity by the result who compares with 0 decision of Δ T.
Each control chip receives and all carries out the PID computing after the temperature sensing value and regulate output voltage and polarity.
Concrete adjustment process is as follows:
If polarity is for just, then control chip control DIRECTION end is high level, and this moment is by bridge circuit V+ output high level, V-output low level.Simultaneously according to pid algorithm, Δ T is big more, the voltage that then is added in the semiconductor cooler two ends is big more, host computer sends instructions to control chip after calculating the voltage that be added in the semiconductor cooler two ends according to algorithm, control chip is ordered according to this, change the dutycycle of PWM INPUT pin, so that the output of regulating circuit reaches the voltage of setting.Make semiconductor cooler reach the steady temperature value of setting and so forth.
2, random waveform temperature control
When just beginning to control, behind the waveform that upper computer selecting is exported well, set the parameter of waveform, the output steering order is to control chip.Device begins to carry out the control of waveform temperature, host computer is controlled the initial temperature of semiconductor cooler to waveform earlier, with reference to the thermostatic control process, because output is the temperature waveform, therefore can export different desired temperature instructions at different moment host computers, determine with rate of temperature fall by the maximum intensification of the temperature output waveform that chooses and this waveform parameter and this device at the different temperature value that difference is exported constantly.So just can produce the temperature waveform on the semiconductor cooler surface.
Below to produce 20～40 degree square wave temperature waveforms:
If the cycle of this square wave is 10s, the time of 40 degree and 20 degree all is 5s, the mode that host computer is spent the initial temperature 20 of square wave with the temperature setting command when initial sends to control chip, and control chip arrives 20 degree according to thermostatic control process control semiconductor cooler.After arriving 5s, 40 degree send to control chip in the mode of instruction, and are same, and control chip allows semiconductor cooler reach 40 degree rapidly with thermostatically controlled process and keeps the 5s time, and so forth.
Produce 20～40 degree triangular wave temperature waveforms:
If this triangle wave period be 10s, rise time and fall time all are 5s, the time that the beginning temperature is set is 0s, then send temperature control command and temperature control numerical value by host computer to slave computer every 100ms, numerical value is according to calculating according to linear relationship, send the temperature setting command of 20.4 degree in the time of as 100ms, in 5s, send the temperature setting command of 40 degree, in 5～10 time, send the temperature setting command every 100ms according to the different time, calculate desired temperature according to linear relationship equally and send the 39.6 temperature setting commands of spending, both can obtain the temperature triangular waveform by that analogy such as host computer in 5.1s.
The output of waveform temperature is summed up: under the prerequisite of maximum heating rate and maximum rate of temperature fall, the difference of different waveforms only is the desired temperature difference that different moment host computers sends to control chip.
Claims (2)
1. quick generating means of surface temperature signal, it is characterized in that: be provided with and comprise semiconductor cooler, heat interchanger, infrared sensor, liquid crystal, host computer and control circuit, semiconductor cooler is as the temperature signal generating device, system becomes by being connected with the galvanic P-N structure that can change direction of current, has hot and cold two end faces; Heat interchanger comprises water, gas two-path switching system as the radiating element of semiconductor cooler, is respectively equipped with solenoid valve and pump in water, the gas two-path switching system, and solenoid valve is connected with the control signal of pump with control circuit output; Infrared temperature sensor is arranged on the semiconductor cooler top, the surface temperature of gathering semiconductor cooler, and liquid crystal shows the surface temperature of semiconductor cooler in real time; Contain power circuit in the control circuit, modulate circuit, bridge circuit and regulating circuit and control chip, infrared sensor inputs to the semiconductor cooler surface temperature of gathering to be provided with and comprises analog to digital conversion, amplify, the modulate circuit of filtering, modulate circuit exports digital signal to control chip, control chip is provided with serial ports and is connected with host computer, send temperature data in real time to host computer, host computer sends instructions to control chip according to variation of temperature, control chip is according to the instruction of the host computer control heat interchanger water that transmits control signal, the unlatching of corresponding solenoid valve and pump or close in the gas two-path switching system is to regulate the overall thermal capacity of semiconductor cooler and heat interchanger; Control chip also transmits control signal to regulating circuit according to the instruction of host computer, and regulating circuit output is connected semiconductor cooler electric power polarity two ends, is used to regulate the semiconductor cooler both end voltage, to regulate the heating-cooling speed of semiconductor cooler; Control chip output also transmits control signal to bridge circuit according to the instruction of host computer, bridge circuit output heats, freezes semiconductor cooler and closes the switching of three kinds of mode of operations, by pid algorithm, produce the function waveform surface temperature signal that comprises sine wave, square wave, triangular wave, sawtooth wave.
2. according to the quick generating means of the described surface temperature signal of claim 1, it is characterized in that: bridge circuit is provided with 9 field effect transistor, 4 diodes, 4 resistance and 1 electrochemical capacitor, the grid of first field effect transistor links to each other with an input/output port of control chip as the input end of semiconductor voltage reversing, the drain electrode of first field effect transistor links to each other with an end of first resistance, the first resistance other end links to each other the source ground of first field effect transistor with+5V voltage; The grid of second field effect transistor links to each other with the drain electrode of first field effect transistor, the drain electrode of second field effect transistor links to each other with an end of the 3rd resistance, the 3rd resistance other end and electrochemical capacitor anodal and+16V voltage links to each other electrochemical capacitor minus earth, the source ground of second field effect transistor; The input end that the grid of the 3rd field effect transistor is closed as semiconductor voltage links to each other the source ground of the 3rd field effect transistor with another input/output port of control chip; The grid of the 4th field effect transistor links to each other with an end of second resistance, and the other end of second resistance links to each other with+5V voltage, and the drain electrode of the 4th field effect transistor links to each other with the negative terminal of semiconductor cooler TEC, and the source electrode of the 4th field effect transistor links to each other with the drain electrode of the 3rd field effect transistor; The grid of the 5th field effect transistor links to each other with an end of the 4th resistance, and the 4th resistance other end links to each other with the positive pole of+16V voltage and electrochemical capacitor, and the source electrode of the 5th field effect transistor links to each other with the negative terminal of semiconductor cooler TEC; The grid of the 6th field effect transistor links to each other with the drain electrode of second field effect transistor, and the drain electrode of the 6th field effect transistor links to each other with the drain electrode of the 5th field effect transistor, and the source electrode of the 6th field effect transistor links to each other with the anode of semiconductor cooler TEC; The grid of the 7th field effect transistor links to each other with the drain electrode of first field effect transistor, and the drain electrode of the 7th field effect transistor links to each other with the anode of semiconductor cooler TEC, and the source electrode of the 7th field effect transistor links to each other with the drain electrode of the 3rd field effect transistor; The grid of the 8th field effect transistor links to each other with the grid of the 4th field effect transistor, and the drain electrode of the 8th field effect transistor links to each other with the grid of the 5th field effect transistor, the source ground of the 8th field effect transistor; The grid of the 9th field effect transistor links to each other with the drain electrode of first field effect transistor, and the drain electrode of the 9th field effect transistor links to each other with the grid of the 8th field effect transistor, the source ground of the 9th field effect transistor; In 4 diodes, first, second two diode series connection, the one 2 utmost point pipe negative terminal is connected with the drain electrode of the 5th and the 6th field effect transistor, and the 22 utmost point pipe anode is connected with the source electrode of the 4th and the 7th field effect transistor, links to each other with the anode of semiconductor cooler TEC between first, second two diodes; Three, the 4 two diode series connection, the 32 utmost point pipe negative terminal is connected with the drain electrode of the 5th and the 6th field effect transistor, the 42 utmost point pipe anode is connected with the source electrode of the 4th and the 7th field effect transistor, links to each other with the negative terminal of semiconductor cooler TEC between the 3rd, the 4 two diode;
Regulating circuit is provided with two stage amplifer, five resistance, two electric capacity and a triode, the PWM INPUT signal that is produced different duty by single-chip microcomputer links to each other with an end of the 7th resistance, the other end of the 7th resistance links to each other with an end of the 8th resistance and an end of first electric capacity, the first electric capacity other end ground connection, the other end of the 8th resistance links to each other with the positive input terminal of first order amplifier, the output signal of first order amplifier is delivered to the positive input terminal of second level amplifier, the output signal of first order amplifier also links to each other with the 6th resistance one end, the 6th resistance other end connects the 5th resistance one end, the 5th resistance other end ground connection, be connected the negative input end of first order amplifier between the 6th resistance and the 5th resistance, the positive power source terminal connection+12V voltage of first order amplifier and connect second electric capacity after ground connection; The negative power end ground connection of first order amplifier; The output terminal of second level amplifier connects an end of the 9th resistance, the other end of the 9th resistance connects transistor base, transistor collector connects+12V voltage, and the negative terminal of first, the 3 two diode is connected in the negative input end of transistor emitter and first order amplifier and the bridge circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010298099XA CN101968664B (en) | 2010-09-30 | 2010-09-30 | Surface temperature signal fast generating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010298099XA CN101968664B (en) | 2010-09-30 | 2010-09-30 | Surface temperature signal fast generating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101968664A true CN101968664A (en) | 2011-02-09 |
| CN101968664B CN101968664B (en) | 2012-06-27 |
Family
ID=43547832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010298099XA Expired - Fee Related CN101968664B (en) | 2010-09-30 | 2010-09-30 | Surface temperature signal fast generating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101968664B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103575401A (en) * | 2012-07-20 | 2014-02-12 | 中国科学院电工研究所 | System for testing temperature distribution characteristics of power semiconductor module |
| CN108181949A (en) * | 2018-03-21 | 2018-06-19 | 瑞莱生物科技江苏有限公司 | A kind of kit constant-temperature incubation device |
| CN110986424A (en) * | 2019-12-16 | 2020-04-10 | 佛山零度电器有限公司 | Low-power-consumption refrigerating sheet system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101201635A (en) * | 2007-07-27 | 2008-06-18 | 吉林大学 | Precision thermostatic control laboratory box |
| US20090219969A1 (en) * | 2008-03-03 | 2009-09-03 | Canon Anelva Corporation | Substrate surface temperature measurement method, substrate processing apparatus using the same, and semiconductor device manufacturing method |
| CN101799694A (en) * | 2010-02-01 | 2010-08-11 | 东南大学 | Temperature tactile representation device with variable heat capacity |
-
2010
- 2010-09-30 CN CN201010298099XA patent/CN101968664B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101201635A (en) * | 2007-07-27 | 2008-06-18 | 吉林大学 | Precision thermostatic control laboratory box |
| US20090219969A1 (en) * | 2008-03-03 | 2009-09-03 | Canon Anelva Corporation | Substrate surface temperature measurement method, substrate processing apparatus using the same, and semiconductor device manufacturing method |
| CN101799694A (en) * | 2010-02-01 | 2010-08-11 | 东南大学 | Temperature tactile representation device with variable heat capacity |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103575401A (en) * | 2012-07-20 | 2014-02-12 | 中国科学院电工研究所 | System for testing temperature distribution characteristics of power semiconductor module |
| CN108181949A (en) * | 2018-03-21 | 2018-06-19 | 瑞莱生物科技江苏有限公司 | A kind of kit constant-temperature incubation device |
| CN110986424A (en) * | 2019-12-16 | 2020-04-10 | 佛山零度电器有限公司 | Low-power-consumption refrigerating sheet system |
| CN110986424B (en) * | 2019-12-16 | 2021-08-27 | 佛山零度电器有限公司 | Low-power-consumption refrigerating sheet system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101968664B (en) | 2012-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102033079B (en) | Instrument for testing stratum in-situ thermal property of ground source heat pump and heat exchange quantity of buried pipe | |
| CN204087018U (en) | A kind of temperature control system of semiconductor laser | |
| CN204787473U (en) | Drive of two -stage high frequency canalis haemalis refrigerator direct current and initiative temperature control system | |
| CN103279155B (en) | Temperature control system | |
| CN105652919A (en) | Temperature control system | |
| Wang et al. | High efficiency thermoelectric temperature control system with improved proportional integral differential algorithm using energy feedback technique | |
| CN101968664B (en) | Surface temperature signal fast generating device | |
| CN107655959A (en) | A kind of controllable thermoelectrochemistry battery testing platform of electrode temperature and its method | |
| CN101799694B (en) | Temperature tactile representation device with variable heat capacity | |
| CN107491113A (en) | A kind of fuzzy temperature control system based on ARM | |
| CN105242716A (en) | Temperature control system | |
| CN105960036A (en) | Sectional type precision control electric heater | |
| CN206991136U (en) | A kind of temperature control and protection circuit for semiconductor chilling plate | |
| Cai et al. | An MPTD-specialized MPPT algorithm used for a novel medium-power thermoelectric system | |
| CN207366504U (en) | A kind of controllable thermoelectrochemistry battery testing platform of electrode temperature | |
| RU2664276C2 (en) | Method of regulation of the geothermal heat pump system and device for its implementation | |
| CN108255211A (en) | A kind of TEC refrigerating plants | |
| CN107817850A (en) | PCR instrument temperature control system | |
| CN206361982U (en) | A kind of solar water heater water pipe protection device | |
| CN201885985U (en) | Tester for in-situ formation thermal property and ground pipe transferred heat of ground source heat pump | |
| CN203351939U (en) | Constant temperature laser of temperature-compensating type | |
| CN209167919U (en) | A kind of Multicircuit temperature-controller | |
| CN207557792U (en) | PCR instrument temperature control system | |
| CN207317056U (en) | The circulatory system and conduction oil heating cycle system | |
| CN209512542U (en) | A kind of efficient high temperature furnace temperature-controlling system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120627 Termination date: 20140930 |
|
| EXPY | Termination of patent right or utility model |