CN101967054B - Preparation method of In2O3/SnO2 gas sensitive material with porous structure - Google Patents

Preparation method of In2O3/SnO2 gas sensitive material with porous structure Download PDF

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Publication number
CN101967054B
CN101967054B CN2010102741838A CN201010274183A CN101967054B CN 101967054 B CN101967054 B CN 101967054B CN 2010102741838 A CN2010102741838 A CN 2010102741838A CN 201010274183 A CN201010274183 A CN 201010274183A CN 101967054 B CN101967054 B CN 101967054B
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gas sensitive
in2o3
sno
sintering
porous structure
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CN101967054A (en
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周晓龙
曹建春
陈敬超
阮进
于杰
杜焰
沈黎
吴大平
熊大民
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Kunming University of Science and Technology
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Kunming University of Science and Technology
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Abstract

The invention relates to a preparation method of an In2O3/SnO2 gas sensitive material with a porous structure. The method comprises the following steps: mixing commercial In2O3 powder and SnO2 powder in a weight ratio of 4:1 or 7:3 or 3:2 place and mixing, compressing into a green body, and then placing the green body in a sintering furnace with oxygen atmosphere and carrying out solid phase sintering to finally obtain the In2O3/SnO2 gas sensitive material with the porous structure. The method of the invention controls the sintering temperature to obtain the In2O3/SnO2 gas sensitive material with the micron or submicron grade porous structure with regular holes, thus the porous structure is adopted to increase the specific area so as to increase the gas sensitivity and the weight of In2O3/SnO2 is controlled to increase the selectivity to different gases. Therefore, the gas sensitive material with the porous structure which has high sensitivity and selectivity can be obtained. The method adopted by the invention has the advantages of easy preparation of raw material, low cost, clean production, is easy to control, and the like.

Description

A kind of In 2O 3/ SnO 2The preparation method of porous road structure gas sensitive
Technical field
The present invention relates to the stupalith synthesis technical field, specifically a kind of In 2O 3/ SnO 2The preparation method of porous road structure gas sensitive.
Background technology
Along with science and technology development, to the detection of inflammable gas and poisonous gas, monitoring, warning require increasingly highly, this just has higher requirement to detecting the gas sensitive that relies on; Therefore, sensitivity, selectivity and the permanent stability of raising gas sensitive and reduction working temperature, shortening response recovery time etc. become the important directions of gas sensitive development.
The investigator generally believes that the method for improving the gas sensitive over-all properties mainly contains doped metal ion (comprising precious metal or REE) or MOX, increase gas sensitive specific surface area, strengthens the research of gas sensing mechanism etc. at present.
Structural metal, porous road oxide gas-sensing material utilizes the vesicular structure specific surface area big just; Mesoporous (several nanometers to tens nanometer) structure is strong to the adsorptivity of gas; Increased that this material microstructure characteristic of Activity of Chemical Reaction point proposes, the gas sensitization property of the MOX gas sensitive of this structure is much better than the common metal oxide composite.Though porous road microtexture has played vital role to improving gas sensitive gas sensitization property; But with a kind of MOX under specific temperature conditions not only to a kind of gas sensitization; Maybe be all responsive to several kinds of gases; Cause people to the difficulty that gaseous species detects, need the selectivity of gas sensitive further be improved, to realize prepared transmitter gas sensitization only in use being detected; The realization of this target only depends on very difficulty of a kind of metal oxide materials, and therefore, the gas sensitive research worker has proposed to adopt complex metal oxides to improve the selectivity of gas sensitive.Just be based on the susceptibility of cellular structure metals oxide compound to gas; And on complex metal oxides the basis that the selectivity and the susceptibility of gas is all increased; Exploitation pore passage structure composite metal oxide gas-sensing material, significant to the gas sensitive effect that improves the MOX gas sensitive.
Summary of the invention
The objective of the invention is development trend,, provide a kind of employing in-situ sintering growth method to synthesize In in conjunction with the susceptibility of porous road structure and complex phase MOX and characteristics optionally to gas sensitive 2O 3/ SnO 2The method of porous road structure gas sensitive.
The present invention adopts in-situ sintering to grow to prepare In 2O 3/ SnO 2Porous road structure gas sensitive.This method mainly is through to In 2O 3/ SnO 2The kinetics of complex phase MOX growth in situ is controlled in the regulation and control of gas sensitive sintering temperature and sintering atmosphere, thereby regulates and control the quantity of pore passage structure and coordination defective thereof, to obtain In 2O 3And SnO 2The porous road structure In that component proportions is different 2O 3/ SnO 2Gas sensitive.
The present invention realizes through following scheme:
At first with commercially available In 2O 3And SnO 2Powder is pressed into biscuit in the ratio of 4: 1 or 7: 3 or 3: 2 in punching block, biscuit is packed into carry out solid state sintering in the oxygen atmosphere sintering stove then, finally obtains porous road structure In 2O 3/ SnO 2Gas sensitive.
Raw material: commercially available In 2O 3And SnO 2Powder, powder size are between 50-500nm, and purity reaches 99.995%.
Punching block compacting: pressing pressure: 60-90Mpa; Dwell time: 2-5min.
In-situ sintering growth of oxygen atmosphere sintering condition:
1) oxygen that uses requires purity to be higher than 99.999%, and dew point is lower than-72 ℃;
2) sintering condition: temperature rise rate 50-500 ℃/h; Insulation is divided into two sections, and first section TR 600-700 ℃, second section TR 1250-1450 ℃; Soaking time 1-5 hour; Oxygen flow 3-8L/min.
The present invention obtains pass regular micron and submicron order pore passage structure In through the regulation and control to sintering temperature 2O 3/ SnO 2Gas sensitive increases specific surface area to improve gas sensing property, on the other hand through regulation and control/SnO through porous road structure on the one hand 2Amount improve selectivity to gas with various.The porous road structure gas sensitive that final acquisition is highly sensitive, selectivity is strong.The method that the present invention adopted has raw material and prepares simple, advantages such as cost is low, easy to control, production cleaning.
Embodiment
Embodiment 1:
With commercially available In 2O 3And SnO 2Powder (the In in the punching block that packs into 2O 3: SnO 2=4: 1), be 90MPa according to pressing pressure, the condition of pressurize 3min is pressed into biscuit; Then biscuit is put into sintering oven and carry out the in-situ sintering growth, sintering process is: be raised to 600 ℃ with 500 ℃/h temperature rise rate, behind the insulation 1h; Be warmed up to 1300 ℃ again, insulation 5h, last furnace cooling.Oxygen flow keeps 8L/min in temperature-rise period.
Embodiment 2:
With commercially available In 2O 3And SnO 2Powder (the In in the punching block that packs into 2O 3: SnO 2=7: 3), be 65MPa according to pressing pressure, the condition of pressurize 2min is pressed into biscuit; Then biscuit is put into sintering oven and carry out the in-situ sintering growth, sintering process is: be raised to 700 ℃ with 300 ℃/h temperature rise rate, behind the insulation 2h; Be warmed up to 1450 ℃ again, insulation 2h, preferably furnace cooling.Oxygen flow keeps 5L/min in temperature-rise period.
Embodiment 3:
With commercially available In 2O 3And SnO 2Powder (the In in the punching block that packs into 2O 3: SnO 2=3: 2), be 80MPa according to pressing pressure, the condition of pressurize 5min is pressed into biscuit; Then biscuit is put into sintering oven and carry out the in-situ sintering growth, sintering process is: be raised to 650 ℃ with 80 ℃/h temperature rise rate, behind the insulation 1h; Be warmed up to 1250 ℃ again, insulation 3h, preferably furnace cooling.Oxygen flow keeps 3L/min in temperature-rise period.

Claims (2)

1. In 2O 3/ SnO 2The preparation method of porous road structure gas sensitive is characterized in that: with commercially available In 2O 3And SnO 2Powder is pressed into biscuit in the ratio of 4: 1 or 7: 3 or 3: 2 in punching block, biscuit is packed into carry out solid state sintering in the oxygen atmosphere sintering stove then, obtains porous road structure In 2O 3/ SnO 2Gas sensitive; In-situ sintering growth of oxygen atmosphere sintering condition: temperature rise rate 50-500 ℃/h; Insulation is divided into two sections, and first section TR 600-700 ℃, second section TR 1250-1450 ℃; Soaking time 1-5 hour, oxygen flow 3-8L/min; Commercially available In 2O 3And SnO 2The powder size of powder is between 50-500nm, and purity reaches 99.995%; The pressing pressure of punching block compacting is: 60-90MPa, dwell time: 2-5min.
2. In according to claim 1 2O 3/ SnO 2The preparation method of porous road structure gas sensitive, the oxygen purity that uses when it is characterized in that sintering is higher than 99.999%, and dew point is lower than-72 ℃.
CN2010102741838A 2010-09-07 2010-09-07 Preparation method of In2O3/SnO2 gas sensitive material with porous structure Expired - Fee Related CN101967054B (en)

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CN103966697B (en) * 2014-05-16 2016-04-27 北京化工大学 A kind of p-n composite construction nano-metal-oxide and its preparation method and application
CN107352577B (en) * 2017-06-28 2020-06-02 齐鲁工业大学 Micro-nano net structure In2O3/SnO2Composite material and growing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1990422A (en) * 2005-12-26 2007-07-04 三井金属矿业株式会社 Oxidate sintered body and method for making same, sputtering target and transparent conductive film
CN101201333A (en) * 2006-04-21 2008-06-18 湖南大学 Method for preparing ITO nanometer line and gas sensor thereof

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US6500225B2 (en) * 1998-12-03 2002-12-31 Sumitomo Chemical Company, Limited Method for producing high density indium-tin-oxide sintered body

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1990422A (en) * 2005-12-26 2007-07-04 三井金属矿业株式会社 Oxidate sintered body and method for making same, sputtering target and transparent conductive film
CN101201333A (en) * 2006-04-21 2008-06-18 湖南大学 Method for preparing ITO nanometer line and gas sensor thereof

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