CN101958576B - Power supply redundancy parallel circuit and working method thereof - Google Patents
Power supply redundancy parallel circuit and working method thereof Download PDFInfo
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- CN101958576B CN101958576B CN 201010184956 CN201010184956A CN101958576B CN 101958576 B CN101958576 B CN 101958576B CN 201010184956 CN201010184956 CN 201010184956 CN 201010184956 A CN201010184956 A CN 201010184956A CN 101958576 B CN101958576 B CN 101958576B
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Abstract
The invention provides a power supply redundancy parallel circuit and a working method thereof, belonging to the field of power supplies. The power supply redundancy parallel circuit comprises a system load and multiple paths of power supply modules, wherein each path of power supply module comprises a power supply, a field effect tube and a control detection unit; a source electrode of the field effect tube is connected with the power supply, and a drain electrode of the field effect tube is connected with the system load; the control detection unit is used for detecting voltages at two ends of the field effect tube when a parasitic diode of the field effect tube connected with the power supply redundancy parallel circuit is conducted, and conducting the filed effect tube when voltages at two ends of the field effect tube are more than a preset voltage threshold value; and the power supply is used for supplying power for the system load through the field effect tube when the field effect tube connected with the power supply redundancy parallel circuit is conducted. The invention reduces the power loss of a switching element of the redundancy parallel circuit, decreases the voltage drop of an input power supply of the redundancy parallel circuit, increases the switching speed of power supply, and improves the reliability of the system; and a control manner of the power supply redundancy parallel circuit is simple and convenient.
Description
Technical field
The embodiment of the invention relates to circuit engineering, relates in particular to a kind of power supply redundancy parallel circuits and method of work, belongs to field of power supplies.
Background technology
At present, in order to improve the power supply reliability of electronic system, avoid owing to the power supply fault, the problem that causes system to work, it is in parallel often multichannel to be exported identical power supply, and one of them power supply is as main power source, and other power supply is as backup battery.By the main power source power supply, when main power source broke down, backup battery was given system power supply immediately generally speaking, and the assurance system is continuous firing normally.
Fig. 1 be in the prior art with the schematic diagram of two-way power supply parallel connection, as can be seen from Figure 1, prior art utilize the forward conduction of diode component and oppositely cut-off characteristics realize the redundant parallel of main power source and backup battery, give system power supply.Namely when first via power supply is powered to system load, the diode current flow that links to each other with first via power supply, if the diode current flow that links to each other with first via power supply, the diode that then links to each other with the second road power supply is not because oppositely cut-off characteristics just can conducting, and therefore the second tunnel power supply stops to power to system load.
In realizing process of the present invention, the inventor finds that there are the following problems at least in the prior art:
Because diode has larger conducting voltage, when system load needs larger electric current, power loss on diode is larger, affect the reliability of diode, if take reliable cooling measure, improve the reliability of diode, then needing increases the ancillary equipment such as fin even fan, has not only increased the reliability that cost has also reduced whole system simultaneously; And in the low-voltage occasion, the conducting voltage of diode may cause the output voltage of power supply can't satisfy the demand of system, and causes system to work; Further, diode has long conducting and deadline, is generally dozens of us.Work as mains power failure, backup battery when power supply, there is long switching time, might cause system power failure, important information is not in time preserved and the problem of losing.Simultaneously, also may occur backup battery during switching and pour in down a chimney the problem that the main power source secondary is damaged into main power source.
Summary of the invention
The invention provides power supply redundancy parallel circuits and method of work, solved in the prior art with diode and realized that the pressure drop that the power supply parallel connection brings is large, loss large and the shortcoming of poor reliability.
The invention provides the power supply redundancy parallel circuits, described circuit comprises system load and multiple-way supply module; Every road supply module comprises power supply, field effect transistor and control detecting unit; The source electrode of described field effect transistor and described power supply join, and the drain electrode of described field effect transistor and described system load are joined;
Described control detecting unit, when being used for the parasitic body diode conducting when the field effect transistor of joining with described control detecting unit, detect the voltage at described field effect transistor two ends, and when the voltage at described field effect transistor two ends during greater than predetermined voltage threshold, the described field effect transistor of conducting;
Described power supply is used for powering to described system load by described field effect transistor when with field effect transistor conducting that described power supply links to each other.
Power supply redundancy parallel circuits method of work provided by the invention comprises:
When the parasitic body diode conducting of the field effect transistor of first via supply module, detect the voltage at described field effect transistor two ends, when the voltage at described field effect transistor two ends during greater than predetermined voltage threshold, the described field effect transistor of conducting;
The power supply of described first via supply module is powered to system load.
The present invention is by being used in field effect transistor in the redundant parallel circuit, and source electrode and drain electrode reversal connection with field effect transistor, when giving power supply electrifying, the parasitic body diode of field effect transistor can forward conduction, when this parasitic body diode conducting, the control detecting unit detects the voltage at the field effect transistor two ends that link to each other with self, when the voltage at these field effect transistor two ends during greater than predetermined voltage threshold, this field effect transistor of conducting, powered to system load by the power supply that links to each other with this field effect transistor, reduced the switching device power loss of redundant parallel circuit, reduced the pressure drop of redundant parallel circuit input power, improve the switch speed of Power supply, also improve the reliability of system, and control mode is simple and convenient.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, the below will do one to the accompanying drawing of required use in embodiment or the description of the Prior Art and introduce simply, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is with the schematic diagram of two-way power supply parallel connection in the prior art;
Fig. 2 is power supply redundancy parallel circuits example structure schematic diagram of the present invention;
Fig. 3 is power supply redundancy parallel circuits method of work the first embodiment schematic flow sheet of the present invention;
Fig. 4 is power supply redundancy parallel circuits method of work the second embodiment schematic flow sheet of the present invention.
Embodiment
For the purpose, technical scheme and the advantage that make the embodiment of the invention clearer, below in conjunction with the accompanying drawing in the embodiment of the invention, technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
Embodiment 1
Fig. 2 is power supply redundancy parallel circuits embodiment schematic diagram of the present invention, and as shown in Figure 2, this circuit comprises system load 10 and multiple-way supply module 11; Every road supply module comprises power supply 110, field effect transistor 111 and control detecting unit 112, wherein, the source of field effect transistor 111 (Source is hereinafter to be referred as the S) utmost point and power supply 110 join, the leakage of field effect transistor 111 (Drain is hereinafter to be referred as the D) utmost point and system load 10 are joined;
Wherein, control detecting unit 112 when being used for the parasitic body diode conducting when the field effect transistor 111 of joining with self, detects the voltage at these field effect transistor 111 two ends, and when the voltage at these field effect transistor 111 two ends during greater than predetermined voltage threshold, this field effect transistor 111 of conducting;
Power supply 110 is used for powering to system load 10 by field effect transistor 111 when field effect transistor 111 conducting that links to each other with self.
Control detecting unit 112 when also being negative pressure for detection of the voltage to field effect transistor 111 two ends that link to each other with self, is closed this field effect transistor 111.
Concrete, field effect transistor 111 can be N NMOS N-channel MOS N field effect transistor (MetalOxide Semicoductor Field Effect Transistor, hereinafter to be referred as MOSFET), also can be the MOSFET of P raceway groove, when using the MOSFET of P raceway groove, the connection of the S utmost point and the D utmost point is opposite with D utmost point connected mode with the S utmost point of N-channel MOS FET, and both grid (Gate, hereinafter to be referred as G) utmost point driving voltage is also opposite, for example, the G utmost point of N-channel MOS FET is by high voltage drive, and the MOSFET of P raceway groove is by low voltage drive.The present invention is elaborated as an example of N-channel MOS FET example.
The embodiment of the invention describes as an example of duplex feeding module in parallel example, but is not limited to two, can also the above supply module of two-way in parallel.As shown in Figure 2, the power supply of establishing first via supply module is VIN1, and the power supply of the second road supply module is VIN2, and field effect transistor 111 is N-channel MOS FET.Because the S utmost point and the power supply 110 of N-channel MOS FET join, the D utmost point and the system load 10 of N-channel MOS FET are joined, when all powering on for first via supply module and the second road supply module, speed ratio the second road supply module speed that powers on is fast if first via supply module powers on, then the parasitic body diode forward conduction of the N-channel MOS FET of first via supply module.The power pin VCC of the control detecting unit 112 of first via supply module links to each other with power supply 110, when the parasitic body diode forward conduction of the N-channel MOS FET of first via supply module, the voltage detecting pin INP of the control detecting unit 112 of first via supply module and INN detect the voltage at N-channel MOS FET two ends, the VOUT pin of control detecting unit 112 and the G utmost point of N-channel MOS FET join, after the parasitic body diode conducting, the voltage detecting pin INP of control detecting unit 112 and voltage that INN detects N-channel MOS FET two ends are during greater than predetermined voltage threshold, and the G utmost point to N-channel MOS FET when namely the voltage at N-channel MOS FET two ends is higher drives signal.
Concrete, detect the voltage V at N-channel MOS FET two ends when control detecting unit 112
Inp-innDuring greater than predetermined voltage threshold, the voltage of control detecting unit 112 control VOUT pins raises gradually, because the VOUT pin of control detecting unit 112 extremely links to each other with the G of N-channel MOS FET, when the voltage of VOUT pin raises gradually, also so that the G pole tension of N-channel MOS FET raise gradually, the gradually conducting of driving N channel mosfet, gradually conducting along with N-channel MOS FET, the S utmost point of N-channel MOS FET and the resistance R DSon between the D utmost point reduce the pressure drop V at INP and INN two ends gradually along with the rising of VOUT pin voltage
Inp-innBecome the product of electric current of the power supply 110 feed system loads 10 of the S utmost point of N-channel MOS FET and the resistance R DSon between the D utmost point and first via supply module, until the complete conducting of N-channel MOS FET, this moment, the power supply VIN1 of first via supply module powered to system load 10, and supply power voltage is VIN1-V
Inp-innBecause the pressure drop of the parasitic body diode of N-channel MOS FET is generally 0.7V, after the complete conducting of N-channel MOS FET, V
Inp-innMagnitude of voltage less than 0.7V, in the situation of VIN1=VIN2, (VIN1-V
Inp-inn)＞(VIN2-0.7V), therefore the parasitic body diode of the N-channel MOS FET in the second road supply module can't conducting, accordingly, the N-channel MOS FET of the second road supply module also can't open, and continued to system load 10 power supplies by the first via supply module this moment.
When short circuit appears in the power supply 110 of first via supply module, can cause the electric current reverse flow of system load 10 to cross the N-channel MOS FET of first via supply module, the control detecting unit 112 of first via supply module detects the voltage V at the N-channel MOS FET two ends that link to each other with self
Inp-innAfter becoming negative pressure, give immediately the G utmost point low level signal of this N-channel MOS FET, so that this N-channel MOS FET closes, avoid system load to damage.
When first via supply module break down stop power supply after, supply power voltage begins to descend, and begins to occur (VIN2-0.7)＞(VIN1-V when voltage V1N1 drops to
Inp-inn) time, the parasitic body diode cut-off of the N-channel MOS FET of first via supply module, back-pressure will appear in the N-channel MOS FET two ends of first via supply module, at this moment, when the voltage that the control detecting unit of first via supply module detects the N-channel MOS FET two ends that link to each other with self is back-pressure, voltage with the output of VOUT pin is low-voltage from high-voltage variable immediately, and to turn-off the N-channel MOS FET of this first via supply module, first via supply module just can not powered to system load yet; Simultaneously, because (VIN2-0.7)＞(VIN1-V
Inp-inn), the parasitic body diode meeting forward conduction of the N-channel MOS FET of the second road supply module, the voltage that the control detecting unit of the second road supply module detects N-channel MOS FET two ends greater than predetermined voltage threshold after, will give the N-channel MOS FET high voltage signal that links to each other with self, make this N-channel MOS FET conducting, the second road supply module just gives system load 10 power supplies.
Among the present invention, N-channel MOS FET also can be connected between system load 10 and the ground, corresponding, the S utmost point of N-channel MOS FET links to each other with system load 10, and the D utmost point of N-channel MOS FET is connected to the ground.The S utmost point of N-channel MOS FET and the annexation of the D utmost point are to want so that power supply 110 offers the parasitic body diode that the electric current of system load 10 can flow through N-channel MOS FET, namely want so that the parasitic body diode forward conduction of N-channel MOS FET.
The present invention is by being used in N-channel MOS FET in the redundant parallel circuit, and the S utmost point and the reversal connection of the D utmost point with N-channel MOS FET, when giving power supply electrifying, the parasitic body diode of N-channel MOS FET can forward conduction, when this parasitic body diode conducting, the control detecting unit detects the voltage at the N-channel MOS FET two ends that link to each other with self, when the voltage at this N-channel MOS FET two ends during greater than predetermined voltage threshold, this N-channel MOS of conducting FET is powered to system load by the power supply that links to each other with this N-channel MOS FET.Utilize diode that main power source is compared with the output-parallel of backup battery together with prior art, the present invention utilizes N-channel MOS FET to realize the redundant parallel of power supply, because N-channel MOS FET has low on-resistance, reduce the switching device power loss of redundant parallel circuit, increased device reliability; Because N-channel MOS FET has very low conducting voltage, reduce the pressure drop of redundant parallel circuit input power simultaneously, can be useful in the low-voltage occasion; And because N-channel MOS FET has fast switching time, therefore utilize N-channel MOS FET can also improve the switch speed of Power supply, further improve the reliability of system; And, the present invention is when the parasitic body diode conducting of N-channel MOS FET, and the control detecting unit can detect the voltage at N-channel MOS FET two ends automatically, then comes the driving N channel mosfet according to the voltage that detects, make N-channel MOS FET conducting, control mode is simple and convenient.
Embodiment 2
Present embodiment provides the method for work of the power supply redundancy parallel circuits shown in the embodiment 1, and Fig. 3 is power supply redundancy parallel circuits method of work the first embodiment schematic flow sheet of the present invention, and the method comprises:
301: when the parasitic body diode conducting of the field effect transistor of first via supply module, detect the voltage at these field effect transistor two ends, when the voltage at these field effect transistor two ends during greater than predetermined voltage threshold, this field effect transistor of conducting;
Concrete, field effect transistor can be N-channel MOS FET, also can be the MOSFET of P raceway groove, when using the MOSFET of P raceway groove, the connection of the S utmost point and the D utmost point is opposite with D utmost point connected mode with the S utmost point of N-channel MOS FET, and both G utmost point driving voltages are also opposite, for example, the G utmost point of N-channel MOS FET is by high voltage drive, and the MOSFET of P raceway groove is by low voltage drive.The present invention is elaborated as an example of N-channel MOS FET example.
302: the power supply of first via supply module is powered to system load.
Fig. 4 is power supply redundancy parallel circuits method of work the second embodiment schematic flow sheet of the present invention, as shown in Figure 4, when the power supply short circuit of first via supply module, can cause the electric current reverse flow of system load to cross field effect transistor, and this moment, the method also comprised:
303: when the voltage that detects the field effect transistor two ends of first via supply module is negative pressure, close this field effect transistor.
When the power supply short circuit of first via supply module, when the voltage that can detect the field effect transistor two ends of first via supply module is negative pressure, close immediately this field effect transistor, can avoid the damage of system load.
Further, close the field effect transistor of first via supply module after, the method also comprises:
304: when the parasitic body diode conducting of the field effect transistor of the second road supply module except first via supply module, detect the voltage at the field effect transistor two ends of the second road supply module;
305: when the voltage at the field effect transistor two ends of the second road supply module that detects during greater than predetermined voltage threshold, the field effect transistor of conducting the second road supply module;
The power supply of 306: the second road supply modules is given described system load power supply.
When the power supply of first via supply module break down stop power supply after, the method can also comprise:
During the parasitic body diode conducting of the field effect transistor of the second road supply module except first via supply module, the voltage at field effect transistor two ends that detects the second road supply module is during greater than predetermined voltage threshold, the field effect transistor of conducting the second road supply module;
The the second road supply module is powered to system load.
Need explanation, for power supply redundancy parallel circuits method of work embodiment, because it is substantially corresponding to power supply redundancy parallel circuits embodiment, so relevant part gets final product referring to the part explanation of power supply redundancy parallel circuits embodiment.
The present invention is by being used in N-channel MOS FET in the redundant parallel circuit, and the S utmost point and the reversal connection of the D utmost point with N-channel MOS FET, when giving power supply electrifying, the parasitic body diode of N-channel MOS FET can forward conduction, when this parasitic body diode conducting, the control detecting unit detects the voltage at the N-channel MOS FET two ends that link to each other with self, when the voltage at this N-channel MOS FET two ends during greater than predetermined voltage threshold, this N-channel MOS of conducting FET is powered to system load by the power supply that links to each other with this N-channel MOS FET.Utilize diode that main power source is compared with the output-parallel of backup battery together with prior art, the present invention utilizes N-channel MOS FET to realize the redundant parallel of power supply, because N-channel MOS FET has low on-resistance, reduce the switching device power loss of redundant parallel circuit, increased device reliability; Because N-channel MOS FET has very low conducting voltage, reduce the pressure drop of redundant parallel circuit input power simultaneously, can be useful in the low-voltage occasion; And because N-channel MOS FET has fast switching time, therefore utilize N-channel MOS FET can also improve the switch speed of Power supply, further improve the reliability of system; And, the present invention is when the parasitic body diode conducting of N-channel MOS FET, and the control detecting unit can detect the voltage at N-channel MOS FET two ends automatically, then comes the driving N channel mosfet according to the voltage that detects, make N-channel MOS FET conducting, control mode is simple and convenient.
One of ordinary skill in the art will appreciate that: all or part of step that realizes said method embodiment can be finished by the relevant hardware of program command, aforesaid program can be stored in the computer read/write memory medium, this program is carried out the step that comprises said method embodiment when carrying out; And aforesaid storage medium comprises: the various media that can be program code stored such as ROM, RAM, magnetic disc or CD.
It should be noted that at last: above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment puts down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (7)
1. a power supply redundancy parallel circuits is characterized in that, described circuit comprises system load and multiple-way supply module; Every road supply module comprises power supply, field effect transistor and control detecting unit; The source electrode of described field effect transistor and described power supply join, and the drain electrode of described field effect transistor and described system load are joined;
Described control detecting unit, when being used for the parasitic body diode conducting when the field effect transistor of joining with described control detecting unit, detect the voltage at described field effect transistor two ends, and when the voltage at described field effect transistor two ends during greater than predetermined voltage threshold, the described field effect transistor of conducting;
Described power supply is used for powering to described system load by described field effect transistor when with field effect transistor conducting that described power supply links to each other.
2. power supply redundancy parallel circuits according to claim 1 is characterized in that, described field effect transistor is N NMOS N-channel MOS N field effect transistor.
3. power supply redundancy parallel circuits according to claim 1 and 2 is characterized in that, described control detecting unit when also being negative pressure for detection of the voltage at the field effect transistor two ends that link to each other to described and described control detecting unit, is closed described field effect transistor.
4. power supply redundancy parallel circuits method of work as claimed in claim 1 is characterized in that described method comprises:
When the parasitic body diode conducting of the field effect transistor of first via supply module, detect the voltage at described field effect transistor two ends, when the voltage at described field effect transistor two ends during greater than predetermined voltage threshold, the described field effect transistor of conducting;
The power supply of described first via supply module is powered to system load.
5. power supply redundancy parallel circuits method of work according to claim 4 is characterized in that, when the voltage at the field effect transistor two ends that detect described first via supply module is negative pressure, closes described field effect transistor.
6. according to claim 4 or 5 described power supply redundancy parallel circuits method of works, it is characterized in that, described method also comprises: during the parasitic body diode conducting of the field effect transistor of the second road supply module except described first via supply module, detect the voltage at the field effect transistor two ends of described the second road supply module;
When the voltage at the field effect transistor two ends of described the second road supply module during greater than predetermined voltage threshold, the field effect transistor of described the second road supply module of conducting;
The power supply of described the second road supply module is given described system load power supply.
7. power supply redundancy parallel circuits method of work according to claim 6 is characterized in that, described field effect transistor is N NMOS N-channel MOS N field effect transistor.
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| CN103166305B (en) * | 2011-12-14 | 2017-04-05 | 国民技术股份有限公司 | A kind of power control system and its implementation and smart card |
| CN103872906B (en) * | 2012-12-18 | 2018-08-24 | 南京中兴新软件有限责任公司 | The control device and method of communication power supply |
| CN103915882B (en) * | 2014-04-01 | 2017-01-04 | 深圳市理邦精密仪器股份有限公司 | A kind of many power sources in parallel input circuit |
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| CN105024547B (en) * | 2015-07-17 | 2018-02-09 | 深圳市理邦精密仪器股份有限公司 | A kind of redundant power |
| CN105245214A (en) * | 2015-11-12 | 2016-01-13 | 郑州雅晨生物科技有限公司 | Battery switching circuit |
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| CN106410922A (en) * | 2016-12-02 | 2017-02-15 | 中国船舶重工集团公司第七二四研究所 | High-power synthesized power supply system power module fault isolation method |
| CN108988470A (en) * | 2017-06-05 | 2018-12-11 | 深圳市道通智能航空技术有限公司 | Battery redundant circuit, unmanned vehicle and its battery powered control method |
| CN108808845A (en) * | 2018-08-14 | 2018-11-13 | 广州奥格智能科技有限公司 | A kind of ultra-low loss double loop power supply switching anti-back flow circuit |
| CN109149551B (en) * | 2018-09-14 | 2021-07-23 | 北京机械设备研究所 | Active redundant parallel power supply control circuit |
| CN110212898B (en) * | 2019-07-05 | 2023-07-25 | 捷普科技（上海）有限公司 | Multichannel switch control system and method |
| CN113497486B (en) * | 2020-03-20 | 2024-01-30 | 华为技术有限公司 | Power supply combining circuit, diagnosis method, device and system |
| CN113541300A (en) * | 2021-07-06 | 2021-10-22 | 浙江大华技术股份有限公司 | Power supply redundancy backup control circuit and LED display system |
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Address after: Cangshan District of Fuzhou City, Fujian province 350002 Jinshan Road No. 618 Garden State Industrial Park 19 floor Patentee after: RUIJIE NETWORKS Co.,Ltd. Address before: Cangshan District of Fuzhou City, Fujian province 350002 Jinshan Road No. 618 Garden State Industrial Park 19 floor Patentee before: Beijing Star-Net Ruijie Networks Co.,Ltd. |