CN101955733A - Method for preparing grinding fluid, grinding fluid, and chemical mechanical polishing (CMP) method for metal tungsten - Google Patents
Method for preparing grinding fluid, grinding fluid, and chemical mechanical polishing (CMP) method for metal tungsten Download PDFInfo
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- CN101955733A CN101955733A CN2009100547991A CN200910054799A CN101955733A CN 101955733 A CN101955733 A CN 101955733A CN 2009100547991 A CN2009100547991 A CN 2009100547991A CN 200910054799 A CN200910054799 A CN 200910054799A CN 101955733 A CN101955733 A CN 101955733A
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- grinding fluid
- hydrogen peroxide
- lapping liquid
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- tungsten
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Abstract
The invention discloses a method for preparing grinding fluid, which comprises the following steps: mixing finished grinding fluid W2000 with water, wherein the weight ratio of the finished grinding fluid to the water is 1:2 to 1:4; adding 31% of aqueous hydrogen peroxide solution into the obtained mixture so as to lead the mass concentration of the final hydrogen peroxide to reach 2.15 percent. The invention also discloses a chemical mechanical polishing (CMP) method for metal tungsten and the grinding fluid. The method for preparing the grinding fluid keeps the concentration of the hydrogen peroxide in the final grinding fluid to be as the same as that in the prior art, and reduces the ratio of the finished grinding fluid W2000 simultaneously at a certain degree; and the grinding fluid is used in the CMP process of tungsten, on the premise that the CMP processing effect is basically unchanged, the consumption of W2000 is reduced, thereby saving the cost.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing technology field, the cmp method of particularly a kind of lapping liquid compound method, lapping liquid and tungsten.
Background technology
Chemically machinery polished (Chemical Mechanical Polishing, CMP) technology is exactly in the atmospheric environment of dust free chamber, utilize mechanical force to the crystal column surface effect, produce fracture corrosive power at the surface film layer, make crystal column surface be tending towards planarization, so that carry out follow-up processing step (as photoetching).And this part must increase its etched efficient by the chemical substance in the lapping liquid by reaction by nationality.Most important two big assemblies are lapping liquid (slurry) and grinding pad (platen) in the CMP processing procedure.
In the prior art, the main component of the lapping liquid of metal tungsten CMP is a water, secondly is with oxygenant, and silica gel or aluminum oxide (Al2O3) are as abrasive grains of fine size.Comparatively Chang Yong oxygenant is hydrogen peroxide (H2O2).In the CMP process, hydrogen peroxide and tungsten generation chemical reaction generate Tungsten oxide 99.999 (WO3).The hardness of Tungsten oxide 99.999 is less than tungsten, thereby Tungsten oxide 99.999 has removed with regard to polished.
Lapping liquid constantly is used in CMP technology and changes and is called as running stores.In the semiconductor integrated circuit manufacturing process, the finished product that adopts other suppliers to provide usually concentrates lapping liquid, finished product is concentrated obtain the actual lapping liquid that uses in the CMP process after lapping liquid, water and hydrogen peroxide mix according to a certain percentage.If it is too high that finished product concentrates the lapping liquid proportion,, can raise the production cost of semiconductor integrated circuit significantly because its price is very expensive; If it is low excessively that finished product concentrates the lapping liquid proportion, make the required time of CMP process increase greatly again, reduce production efficiency, also can improve production cost.Therefore the manufacturer of semiconductor integrated circuit always seeks the proportion relation that a suitable finished product concentrates lapping liquid and water by fair means or foul.
For example in metal tungsten CMP process, the finished product that uses at grinding pad 1 and grinding pad 2 concentrates lapping liquid and is W2000.W2000 is a kind of high-purity non-metal base lapping liquid that is exclusively used in tungsten CMP that card Bert microelectronics (Cabot Microelectronics) company produces, and this lapping liquid has superfine abrasive grains, can effectively avoid CMP processing device is caused surface imperfection.In the prior art, W2000 is mixed according to weight ratio with water at 1: 1, and to add concentration in mixture be 31% aqueous hydrogen peroxide solution, make the mass concentration of final hydrogen peroxide reach 2.15%.The concentration calculation formula of hydrogen peroxide is:
A kind of mode of typical preparation lapping liquid is: the W2000 of 1000 grams are mixed with the pure water of 1000 grams, and in above-mentioned mixing solutions adding 149.05 to restrain concentration be 31% aqueous hydrogen peroxide solution.The concentration that calculates hydrogen peroxide according to above-mentioned formula is (149.05 * 31%)/(149.05+1000+1000)=2.15%.
The price of lapping liquid W2000 is very expensive because finished product concentrates, and the manufacturer of semiconductor integrated circuit wishes to find more cost effective lapping liquid compound method, and under the impregnable prerequisite of the CMP course of processing, the W2000 that is consumed still less.
Summary of the invention
In view of this, the objective of the invention is to, propose a kind of lapping liquid compound method, can under the situation of the CMP course of processing and prior art basically identical, significantly reduce the usage quantity of W2000.
A kind of method of preparing lapping liquid that the embodiment of the invention proposes, finished product lapping liquid W2000 and water are mixed according to the arbitrary proportion in 1: 2 to 1: 4 scope of weight ratio, and to add concentration in mixture be 31% aqueous hydrogen peroxide solution, makes the mass concentration of final hydrogen peroxide reach 2.15%.
Preferably, described method comprises: the W2000 of 667 grams are mixed with the pure water of 1333 grams, and in above-mentioned mixing solutions adding 149.05 to restrain concentration be 31% aqueous hydrogen peroxide solution.
Perhaps, described method comprises: the W2000 of 500 grams are mixed with the pure water of 1500 grams, and in above-mentioned mixing solutions adding 149.05 to restrain concentration be 31% aqueous hydrogen peroxide solution.
Perhaps, described method comprises: the W2000 of 400 grams are mixed with the pure water of 1600 grams, and in above-mentioned mixing solutions adding 149.05 to restrain concentration be 31% aqueous hydrogen peroxide solution.
The present invention also aims to, propose a kind of cmp method of tungsten, can under the situation of the CMP course of processing and prior art basically identical, significantly reduce the usage quantity of W2000.The cmp method of described tungsten comprises: the tungsten film to device on grinding pad 1 and grinding pad 2 grinds, and uses the lapping liquid of aforementioned any method preparation on described grinding pad 1 and/or grinding pad 2.
The present invention also aims to, propose a kind of lapping liquid, described lapping liquid adopts formulated as any method of claim 1 to 4.
As can be seen from the above technical solutions, the lapping liquid compound method that the present invention proposes has kept the concentration of the hydrogen peroxide in the final lapping liquid same as the prior art, reduced simultaneously the ratio of finished product lapping liquid W2000 to a certain extent, keeping under the constant substantially prerequisite of CMP processing effect, make the consumption of W2000 obtain reduction, saved cost.
Description of drawings
Fig. 1 is the schematic cross-section that carries out the device of tungsten CMP processing;
A kind of schema of preparing lapping liquid that Fig. 2 proposes for the embodiment of the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, the present invention is further elaborated below in conjunction with accompanying drawing.
Fig. 1 is the schematic cross-section that carries out the device of tungsten CMP processing.101 is insulation layer, and 102 is the tungsten film that covers on insulation layer, and the surface of tungsten film 102 is because oxygenizement forms the passive film 103 that one deck is made of Tungsten oxide 99.999.The mechanochemical treatment mechanism of the CMP process of carrying out on grinding pad 1 and grinding pad 2 is as follows:
Step 1: the process by mechanical mill is removed passive film 103;
Step 2: oxygenant in the lapping liquid and the tungsten that comes out reaction generate Tungsten oxide 99.999.The principal reaction process is as follows:
Oxidising process: tungsten loses 6 electronics, generates the tungsten of positive 6 valencys:
W-6e→W
6+
Reduction process: hydrogen peroxide obtains 2 electronics, generates water and negative divalence oxygen:
H
2O
2+2e→H
2O+O
2-
Total reaction formula is: W+3H
2O
2→ WO
3+ 3H
2O
The Tungsten oxide 99.999 that is generated forms new passive film attached to the surface of tungsten.
Step 3: step 1-2 circulates repeatedly and carries out, and makes the planarization gradually of tungsten film.
As can be seen, in the CMP process of tungsten, hydrogen peroxide is occupied an leading position to the oxygenizement of tungsten, therefore as long as keep the concentration of hydrogen peroxide in the lapping liquid constant, just can not cause too big influence to the removal speed of tungsten.Therefore can keep reducing the matched proportion density of W2000 under the concentration of hydrogen peroxide situation consistent with prior art.
The contriver finds by the contrast experiment, is under 2.15% the situation in the concentration that keeps hydrogen peroxide, and the quality proportioning of W2000 and water is at 1: 2 between 1: 4 the time, the removal speed of tungsten with respect to prior art all less than too big change.The preparation process of the lapping liquid that the embodiment of the invention proposes comprises the steps: as shown in Figure 2
Step 201: finished product lapping liquid W2000 and water are mixed according to the arbitrary proportion in 1: 2 to 1: 4 scope of weight ratio;
Step 202: interpolation concentration is 31% aqueous hydrogen peroxide solution in described mixture, makes the mass concentration of final hydrogen peroxide reach 2.15%.
When the quality proportioning of W2000 and water was 1: 2, a kind of mode of typical preparation lapping liquid was:
The W2000 of 667 grams are mixed with the pure water of 1333 grams, and in above-mentioned mixing solutions adding 149.05 to restrain concentration be 31% aqueous hydrogen peroxide solution.
When the quality proportioning of W2000 and water was 1: 3, a kind of mode of typical preparation lapping liquid was:
The W2000 of 500 grams are mixed with the pure water of 1500 grams, and in above-mentioned mixing solutions adding 149.05 to restrain concentration be 31% aqueous hydrogen peroxide solution.
When the quality proportioning of W2000 and water was 1: 4, a kind of mode of typical preparation lapping liquid was:
The W2000 of 400 grams are mixed with the pure water of 1600 grams, and in above-mentioned mixing solutions adding 149.05 to restrain concentration be 31% aqueous hydrogen peroxide solution.
The contriver is that the quality proportioning of the lapping liquid that obtains at 1: 3 and W2000 of the prior art and water is that 1: 1 lapping liquid grinds identical sample respectively with W2000 and the quality proportioning of water, the mean value that obtains the removal speed of tungsten be respectively 3496 dusts/minute and 3507 dusts/minute, the gap of removing speed as can be seen is about 0.3%, and the expense of lapping liquid only is original half.
The above only is preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of being done within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. method of preparing lapping liquid, finished product lapping liquid W2000 and water are mixed according to the arbitrary proportion in 1: 2 to 1: 4 scope of weight ratio, and to add concentration in mixture be 31% aqueous hydrogen peroxide solution, makes the mass concentration of final hydrogen peroxide reach 2.15%.
2. method according to claim 1 is characterized in that, described method comprises: the W2000 of 667 grams are mixed with the pure water of 1333 grams, and in above-mentioned mixing solutions adding 149.05 to restrain concentration be 31% aqueous hydrogen peroxide solution.
3. method according to claim 1 is characterized in that, described method comprises: the W2000 of 500 grams are mixed with the pure water of 1500 grams, and in above-mentioned mixing solutions adding 149.05 to restrain concentration be 31% aqueous hydrogen peroxide solution.
4. method according to claim 1 is characterized in that, described method comprises: the W2000 of 400 grams are mixed with the pure water of 1600 grams, and in above-mentioned mixing solutions adding 149.05 to restrain concentration be 31% aqueous hydrogen peroxide solution.
5. the cmp method of a tungsten, the tungsten film to device on grinding pad 1 and grinding pad 2 grinds, and it is characterized in that, uses on described grinding pad 1 and/or grinding pad 2 as lapping liquid that any method of claim 1 to 4 is prepared.
6. a lapping liquid is characterized in that, described lapping liquid adopts formulated as any method of claim 1 to 4.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100547991A CN101955733A (en) | 2009-07-14 | 2009-07-14 | Method for preparing grinding fluid, grinding fluid, and chemical mechanical polishing (CMP) method for metal tungsten |
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| CN2009100547991A CN101955733A (en) | 2009-07-14 | 2009-07-14 | Method for preparing grinding fluid, grinding fluid, and chemical mechanical polishing (CMP) method for metal tungsten |
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| CN101955733A true CN101955733A (en) | 2011-01-26 |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1395295A (en) * | 2001-06-29 | 2003-02-05 | 株式会社日立制作所 | Method for producing semiconductor device and used slurry |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1395295A (en) * | 2001-06-29 | 2003-02-05 | 株式会社日立制作所 | Method for producing semiconductor device and used slurry |
Non-Patent Citations (1)
| Title |
|---|
| 洪啟哲: "有机添加剂和改变稀释比例之化学机械研磨", 《台湾博硕士论文知识加值系统》 * |
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Effective date of registration: 20121119 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Application publication date: 20110126 |