CN101954260A - Processing method of square polycrystalline diamond for drilling - Google Patents
Processing method of square polycrystalline diamond for drilling Download PDFInfo
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- CN101954260A CN101954260A CN 201010524022 CN201010524022A CN101954260A CN 101954260 A CN101954260 A CN 101954260A CN 201010524022 CN201010524022 CN 201010524022 CN 201010524022 A CN201010524022 A CN 201010524022A CN 101954260 A CN101954260 A CN 101954260A
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Abstract
The invention discloses a processing method of a square polycrystalline diamond for drilling. The method comprises the following steps: using diamond powder, silicon and metallic nickel as the basic materials, adding a given amount of boron, mixing, adding the mixture into a carbon synthetic mold, putting the synthetic mold in a vacuum furnace for vacuum heating, putting the semi-finished product into a diamond cubic anvil press to carrying out high-pressure high-temperature synthesis, and depressurizing to obtain the square polycrystalline diamond TSP for drilling. The polycrystalline diamond TSP of the invention has the advantages of high thermal stability, high shock strength and favorable wearability, and can be used for complicated bottom layer well-drilling; and the qualification rate of the product is up to more than 90%.
Description
Technical field
The present invention relates to a kind of processing method of polycrystalline diamond, particularly relate to a kind of processing method of drilling with square polycrystalline diamond.
Background technology
Dimond synneusis PCD (Polycrystalline diamond) forms with fine grained diamond single crystal sintering under HTHP, this product has good wear resistance, heat endurance, compression strength and toughness, is widely used in fields such as geological prospecting, oil exploitation, natural gemstone processing industry and machining dressing tool.Divide two kinds of diamond glomerocryst PCD and diamond glomerocryst TSP at present.Main shape has triangle, square, rectangle, cylindrical, two terminal circle arc, and the variation of its product is applicable to various boring tools and geologic requirements.
At present, the polycrystalline diamond that is widely used in the probing aspect is cylindrical mostly, in order to satisfy the vast requirement in market, through updating of those skilled in the art, has invented the probing polycrystalline diamond of more shape.But, utilize existing technology of synthesizing polycrystalline diamond, be difficult to be processed into the polycrystalline diamond of multiple shape.Promptly allow to produce different shape, its qualification rate is lower.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of processing method of drilling with square polycrystalline diamond.Probing by processing method preparation of the present invention has heat endurance and higher impact strength and better wear resistance preferably with square polycrystalline diamond.
In order to address the above problem, the technical solution used in the present invention is:
The invention provides a kind of processing method of drilling with square polycrystalline diamond, described processing method may further comprise the steps:
A, raw material are formed: represent that with weight percentage the raw material that is adopted consists of bortz powder 78～82%, silicon Si 4～6% and nickel 14～16%;
B, form according to the described raw material of step a and to take by weighing raw material bortz powder, silicon and nickel, mix the back and add the catalyst that accounts for raw material total amount 0.28～0.32% in addition
,Its mixed raw material and catalyst are packed in the square carbon synthetic model, and the carbon synthetic model that raw material and catalyst will be housed is then put into vacuum drying oven and was kept 118～122 minutes; Vacuum is 0.0009～0.0012Pa in the described vacuum drying oven, and temperature is 600～800 ℃;
C, step b is vacuumized the semi-finished product that obtain after the heating put into diamond cubic apparatus pressure machine to carry out HTHP synthetic, the electric current of control cubic apparatus pressure machine is 1795～1805A in the HTHP building-up process, be 68～72s heat time heating time, pressure is 3.8～4.2 ten thousand kilograms, and the dwell time is 85～95s;
D, HTHP carry out release after synthesizing, and obtain the square polycrystalline diamond TSP of product of the present invention after the release.
According to the processing method of probing recited above with square polycrystalline diamond, the diamond particle diameter represents with W40 for 40 microns, and the diamond particle diameter represents with W20 for 20 microns, and 5～7 microns of diamond particle diameters are represented with W5～7; The bortz powder of raw material described in the step a is made up of W40, W20 and W5～7 three kind of a bortz powder, and wherein W40, W20 and W5～7 threes shared weight percentage in the raw material bortz powder is formed is respectively 30%, 50% and 20%.
According to the processing method of probing recited above with square polycrystalline diamond, catalyst described in the step b is a boron.
According to the processing method of probing recited above with square polycrystalline diamond, the electric current of controlling cubic apparatus pressure machine among the step c in the HTHP building-up process is 1800A, and be 70s heat time heating time, and pressure is 4.0 ten thousand kilograms, and the dwell time is 90s.
According to the processing method of probing recited above with square polycrystalline diamond, the high specification of the wide * of long * that obtains the square polycrystalline diamond TSP of product of the present invention described in the steps d is 1.5*1.5*12mm.
Positive beneficial effect of the present invention:
1, the square polycrystalline diamond that utilizes technical solution of the present invention to be prepared from has heat endurance and higher impact strength and better wear resistance preferably; And the qualification rate of product is higher, and its product percent of pass is up to more than 90%.
2, utilize technical solution of the present invention can be processed into square polycrystalline diamond, product of the present invention can be used in complicated bottom drilling well.Can improve the wear resistance ratio of product greatly when product of the present invention is used to drill, and solve the single problem of equipment in the probing.The square polycrystalline diamond master that the present invention is processed into has remarkable economic efficiency with being used for oil bit.
Four, the specific embodiment:
Following examples only in order to further specify the present invention, do not limit content of the present invention.
Embodiment 1:
The present invention drills the processing method with square polycrystalline diamond, and the detailed step of described processing method is as follows:
A, raw material are formed: represent that with weight percentage the raw material that is adopted consists of bortz powder 80%, silicon Si 5% and nickel 15%;
80% raw material bortz powder is made up of W40, W20 and W5～7 three kind of a bortz powder, and wherein W40, W20 and W5～7 threes shared weight percentage in the raw material bortz powder is formed is respectively 30%, 50% and 20%;
B, form according to the described raw material of step a and to take by weighing raw material bortz powder, silicon and nickel, mix the back and add the catalyst boron that accounts for raw material total amount 0.30% in addition
,Its mixed raw material and catalyst boron are packed in the square carbon synthetic model, and the carbon synthetic model that raw material and catalyst will be housed is then put into vacuum drying oven and was kept 120 minutes; Vacuum is 0.001Pa in the described vacuum drying oven, and temperature is 700 ℃;
C, step b is vacuumized the semi-finished product that obtain after the heating put into diamond cubic apparatus pressure machine to carry out HTHP synthetic, the electric current of control cubic apparatus pressure machine is 1800A in the HTHP building-up process, be 70s heat time heating time, and pressure is 4.0 ten thousand kilograms, and the dwell time is 90s;
D, HTHP carry out release after synthesizing, and obtain the square polycrystalline diamond TSP of product of the present invention after the release.
Through above-mentioned processing method, the high specification of the wide * of long * that obtains the square polycrystalline diamond TSP of product of the present invention is 1.5*1.5*12mm.
Embodiment 2:
The present invention drills the processing method with square polycrystalline diamond, and the detailed step of described processing method is as follows:
A, raw material are formed: represent that with weight percentage the raw material that is adopted consists of bortz powder 78%, silicon Si 6% and nickel 16%;
78% raw material bortz powder is made up of W40, W20 and W5～7 three kind of a bortz powder, and wherein W40, W20 and W5～7 threes shared weight percentage in the raw material bortz powder is formed is respectively 30%, 50% and 20%;
B, form according to the described raw material of step a and to take by weighing raw material bortz powder, silicon and nickel, mix the back and add the catalyst boron that accounts for raw material total amount 0.28% in addition
,Its mixed raw material and catalyst boron are packed in the square carbon synthetic model, and the carbon synthetic model that raw material and catalyst will be housed is then put into vacuum drying oven and was kept 122 minutes; Vacuum is 0.0009Pa in the described vacuum drying oven, and temperature is 800 ℃;
C, step b is vacuumized the semi-finished product that obtain after the heating put into diamond cubic apparatus pressure machine to carry out HTHP synthetic, the electric current of control cubic apparatus pressure machine is 1805A in the HTHP building-up process, be 68s heat time heating time, and pressure is 3.8 ten thousand kilograms, and the dwell time is 95s;
D, HTHP carry out release after synthesizing, and obtain the square polycrystalline diamond TSP of product of the present invention after the release.
Through above-mentioned processing method, the high specification of the wide * of long * that obtains the square polycrystalline diamond TSP of product of the present invention is 1.5*1.5*12mm.
Embodiment 3:
The present invention drills the processing method with square polycrystalline diamond, and the detailed step of described processing method is as follows:
A, raw material are formed: represent that with weight percentage the raw material that is adopted consists of bortz powder 82%, silicon Si 4% and nickel 14%;
82% raw material bortz powder is made up of W40, W20 and W5～7 three kind of a bortz powder, and wherein W40, W20 and W5～7 threes shared weight percentage in the raw material bortz powder is formed is respectively 30%, 50% and 20%;
B, form according to the described raw material of step a and to take by weighing raw material bortz powder, silicon and nickel, mix the back and add the catalyst boron that accounts for raw material total amount 0.32% in addition
,Its mixed raw material and catalyst boron are packed in the square carbon synthetic model, and the carbon synthetic model that raw material and catalyst will be housed is then put into vacuum drying oven and was kept 118 minutes; Vacuum is 0.0012Pa in the described vacuum drying oven, and temperature is 600 ℃;
C, step b is vacuumized the semi-finished product that obtain after the heating put into diamond cubic apparatus pressure machine to carry out HTHP synthetic, the electric current of control cubic apparatus pressure machine is 1795A in the HTHP building-up process, be 72s heat time heating time, and pressure is 4.2 ten thousand kilograms, and the dwell time is 85s;
D, HTHP carry out release after synthesizing, and obtain the square polycrystalline diamond TSP of product of the present invention after the release.
Through above-mentioned processing method, the high specification of the wide * of long * that obtains the square polycrystalline diamond TSP of product of the present invention is 1.5*1.5*12mm.
Embodiment 4:
The present invention drills the processing method with square polycrystalline diamond, and the detailed step of described processing method is as follows:
A, raw material are formed: represent that with weight percentage the raw material that is adopted consists of bortz powder 79%, silicon Si 6% and nickel 15%;
79% raw material bortz powder is made up of W40, W20 and W5～7 three kind of a bortz powder, and wherein W40, W20 and W5～7 threes shared weight percentage in the raw material bortz powder is formed is respectively 30%, 50% and 20%;
B, form according to the described raw material of step a and to take by weighing raw material bortz powder, silicon and nickel, mix the back and add the catalyst boron that accounts for raw material total amount 0.29% in addition
,Its mixed raw material and catalyst boron are packed in the square carbon synthetic model, and the carbon synthetic model that raw material and catalyst will be housed is then put into vacuum drying oven and was kept 121 minutes; Vacuum is 0.0009Pa in the described vacuum drying oven, and temperature is 650 ℃;
C, step b is vacuumized the semi-finished product that obtain after the heating put into diamond cubic apparatus pressure machine to carry out HTHP synthetic, the electric current of control cubic apparatus pressure machine is 1802A in the HTHP building-up process, be 69s heat time heating time, and pressure is 3.9 ten thousand kilograms, and the dwell time is 92s;
D, HTHP carry out release after synthesizing, and obtain the square polycrystalline diamond TSP of product of the present invention after the release.
Through above-mentioned processing method, the high specification of the wide * of long * that obtains the square polycrystalline diamond TSP of product of the present invention is 1.5*1.5*12mm.
Embodiment 5:
The present invention drills the processing method with square polycrystalline diamond, and the detailed step of described processing method is as follows:
A, raw material are formed: represent that with weight percentage the raw material that is adopted consists of bortz powder 81%, silicon Si 4% and nickel 15%;
81% raw material bortz powder is made up of W40, W20 and W5～7 three kind of a bortz powder, and wherein W40, W20 and W5～7 threes shared weight percentage in the raw material bortz powder is formed is respectively 30%, 50% and 20%;
B, form according to the described raw material of step a and to take by weighing raw material bortz powder, silicon and nickel, mix the back and add the catalyst boron that accounts for raw material total amount 0.31% in addition
,Its mixed raw material and catalyst boron are packed in the square carbon synthetic model, and the carbon synthetic model that raw material and catalyst will be housed is then put into vacuum drying oven and was kept 119 minutes; Vacuum is 0.0012Pa in the described vacuum drying oven, and temperature is 750 ℃;
C, step b is vacuumized the semi-finished product that obtain after the heating put into diamond cubic apparatus pressure machine to carry out HTHP synthetic, the electric current of control cubic apparatus pressure machine is 1798A in the HTHP building-up process, be 71s heat time heating time, and pressure is 4.1 ten thousand kilograms, and the dwell time is 89s;
D, HTHP carry out release after synthesizing, and obtain the square polycrystalline diamond TSP of product of the present invention after the release.
Through above-mentioned processing method, the high specification of the wide * of long * that obtains the square polycrystalline diamond TSP of product of the present invention is 1.5*1.5*12mm.
Claims (5)
1. a processing method of drilling with square polycrystalline diamond is characterized in that, described processing method may further comprise the steps:
A, raw material are formed: represent that with weight percentage the raw material that is adopted consists of bortz powder 78～82%, silicon Si 4～6% and nickel 14～16%;
B, form according to the described raw material of step a and to take by weighing raw material bortz powder, silicon and nickel, mix the back and add the catalyst that accounts for raw material total amount 0.28～0.32% in addition
,Its mixed raw material and catalyst are packed in the square carbon synthetic model, and the carbon synthetic model that raw material and catalyst will be housed is then put into vacuum drying oven and was kept 118～122 minutes; Vacuum is 0.0009～0.0012Pa in the described vacuum drying oven, and temperature is 600～800 ℃;
C, step b is vacuumized the semi-finished product that obtain after the heating put into diamond cubic apparatus pressure machine to carry out HTHP synthetic, the electric current of control cubic apparatus pressure machine is 1795～1805A in the HTHP building-up process, be 68～72s heat time heating time, pressure is 3.8～4.2 ten thousand kilograms, and the dwell time is 85～95s;
D, HTHP carry out release after synthesizing, and obtain the square polycrystalline diamond TSP of product of the present invention after the release.
2. probing according to claim 1 is characterized in that with the processing method of square polycrystalline diamond: the diamond particle diameter represents with W40 for 40 microns, and the diamond particle diameter represents with W20 for 20 microns, and 5～7 microns of diamond particle diameters are represented with W5～7; The bortz powder of raw material described in the step a is made up of W40, W20 and W5～7 three kind of a bortz powder, and wherein W40, W20 and W5～7 threes shared weight percentage in the raw material bortz powder is formed is respectively 30%, 50% and 20%.
3. probing according to claim 1 is with the processing method of square polycrystalline diamond, and it is characterized in that: catalyst described in the step b is a boron.
4. probing according to claim 1 is with the processing method of square polycrystalline diamond, it is characterized in that: the electric current of controlling cubic apparatus pressure machine among the step c in the HTHP building-up process is 1800A, be 70s heat time heating time, and pressure is 4.0 ten thousand kilograms, and the dwell time is 90s.
5. probing according to claim 1 is with the processing method of square polycrystalline diamond, and it is characterized in that: the high specification of the wide * of long * that obtains the square polycrystalline diamond TSP of product of the present invention described in the steps d is 1.5*1.5*12mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010524022 CN101954260B (en) | 2010-10-29 | 2010-10-29 | Processing method of square polycrystalline diamond for drilling |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010524022 CN101954260B (en) | 2010-10-29 | 2010-10-29 | Processing method of square polycrystalline diamond for drilling |
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| CN101954260A true CN101954260A (en) | 2011-01-26 |
| CN101954260B CN101954260B (en) | 2013-01-16 |
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| CN 201010524022 Expired - Fee Related CN101954260B (en) | 2010-10-29 | 2010-10-29 | Processing method of square polycrystalline diamond for drilling |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102935346A (en) * | 2012-11-23 | 2013-02-20 | 山东昌润钻石股份有限公司 | Micron-level fine particle diamond synthesis process |
| CN105921077A (en) * | 2016-06-23 | 2016-09-07 | 无锡钻探工具厂有限公司 | Die for producing artificial diamond polycrystalline |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85106509A (en) * | 1984-12-14 | 1987-02-25 | 郑州磨料磨具磨削研究所 | Heat-resisting polycrystalline diamond and manufacture method thereof and mould therefor |
| CN87107715A (en) * | 1987-11-13 | 1988-09-07 | 吉林大学 | Macropartical diamond polycrystal with boracium surface and synthetic method thereof |
| CN1032509A (en) * | 1986-10-20 | 1989-04-26 | 美国诺顿公司 | Low pressure bonding diamond polycrystal and manufacture method thereof |
| CN101591812A (en) * | 2009-06-02 | 2009-12-02 | 武汉万邦激光金刚石工具有限公司 | The manufacture craft of brazing diamond polycrystal and mould therefor thereof |
-
2010
- 2010-10-29 CN CN 201010524022 patent/CN101954260B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85106509A (en) * | 1984-12-14 | 1987-02-25 | 郑州磨料磨具磨削研究所 | Heat-resisting polycrystalline diamond and manufacture method thereof and mould therefor |
| CN1032509A (en) * | 1986-10-20 | 1989-04-26 | 美国诺顿公司 | Low pressure bonding diamond polycrystal and manufacture method thereof |
| CN87107715A (en) * | 1987-11-13 | 1988-09-07 | 吉林大学 | Macropartical diamond polycrystal with boracium surface and synthetic method thereof |
| CN101591812A (en) * | 2009-06-02 | 2009-12-02 | 武汉万邦激光金刚石工具有限公司 | The manufacture craft of brazing diamond polycrystal and mould therefor thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102935346A (en) * | 2012-11-23 | 2013-02-20 | 山东昌润钻石股份有限公司 | Micron-level fine particle diamond synthesis process |
| CN102935346B (en) * | 2012-11-23 | 2014-07-23 | 山东昌润钻石股份有限公司 | Micron-level fine particle diamond synthesis process |
| CN105921077A (en) * | 2016-06-23 | 2016-09-07 | 无锡钻探工具厂有限公司 | Die for producing artificial diamond polycrystalline |
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