CN101927454A - Wafer grinding method - Google Patents
Wafer grinding method Download PDFInfo
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- CN101927454A CN101927454A CN2009101518394A CN200910151839A CN101927454A CN 101927454 A CN101927454 A CN 101927454A CN 2009101518394 A CN2009101518394 A CN 2009101518394A CN 200910151839 A CN200910151839 A CN 200910151839A CN 101927454 A CN101927454 A CN 101927454A
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- wafer
- glue material
- grinding method
- peristome
- plasticity
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Abstract
The invention discloses a wafer grinding method which comprises the following steps of: firstly, providing a wafer which is provided with a first side, a second side and a plurality of opening parts sunk in the first side; filing plastic rubber in the opening parts and solidifying the plastic rubber; and grinding to reduce the thickness of the wafer. Since the wafer is protected by the plastic rubber during grinding, the yield of the wafer is improved.
Description
[technical field]
The present invention relates to a kind of wafer grinding method, and particularly relates to a kind of wafer grinding method that prevents that wafer from breaking.
[background technology]
Microelectromechanical systems (MEMS) is the miniature electronic mechanical organ of made in the encapsulating structure of microminiaturization, the technology of its manufacturing extremely is similar to the technology of making integrated circuit, but the mode of MEMS device and its context interaction is then more than traditional integrated circuit, for example interaction on mechanics, optics or the magnetic force.
The MEMS device can comprise minimum electromechanical element (for example switch, minute surface, capacitor, accelerometer, inductor, capacitance sensor or actuator etc.), and the MEMS device can the monolithic mode and integrated circuit integrate, significantly improve the insertion loss and the electric isolating effect of whole solid-state device simultaneously.Yet the MEMS device is very fragile in the macroscopic world of whole encapsulating structure, all may be caused fault by small static or effect of surface tension at any time.Also therefore, polluted or damaged, usually the MEMES device is sealed in the cavity of wafer for fear of the MEMS device.
Fig. 1 illustrates the schematic diagram that breaks in the existing grinding wafer process.Please refer to Fig. 1, have a plurality of cancellate peristomes 102 (or cavity) in the wafer 100.Yet in process of lapping, burst region A, the B (as crystal round fringes) of wafer cause breaking because of weakened, and white residue 104 is stuck in the peristome 102 easily.Therefore, that how to avoid taking place in the process of lapping breaks and major defect such as residual white residue, and real is emphasis of the present invention.
Therefore, be necessary to provide a kind of wafer grinding method, to solve the existing in prior technology problem.
[summary of the invention]
Main purpose of the present invention provides a kind of wafer grinding method, in order to overcome existing defective, improves the yield in the process of lapping.
For reaching above-mentioned purpose, the invention provides a kind of wafer grinding method, comprising: a wafer is provided, and wafer has first, second and a plurality of peristome that is depressed in first, and wafer has a thickness; Insert a plasticity glue material in peristome, and solidify plasticity glue material; And carry out a grinding steps, so that the thickness thinning of wafer.
In one embodiment of this invention, these peristomes comprise with dry-etching formation, and the degree of depth of these peristomes is less than the thickness of wafer.In another embodiment, these peristomes comprise with Wet-type etching formation, and the degree of depth of these peristomes is smaller or equal to the thickness of wafer.
In one embodiment of this invention, insert the method for a plasticity glue material in these peristomes and comprise a glue or rotation gluing.
In one embodiment of this invention, the step of grinding comprises: attach one first adhesive tape first in wafer, and second of wafer is faced up; With a grinding pad second face of wafer is carried out comprehensive grinding, up to manifesting these peristomes and plasticity glue material; And remove first adhesive tape and plasticity glue material.
In one embodiment of this invention, wafer grinding method comprises that more attaching one second adhesive tape is in second of wafer.
In one embodiment of this invention, before second of the grinding wafer, more comprise second of wafer is faced up.
In one embodiment of this invention, remove before first adhesive tape and the plasticity glue material, more comprise the counter-rotating wafer, so that first the facing up of wafer.
In one embodiment of this invention, after the counter-rotating wafer, more comprise attaching one second adhesive tape in second of wafer.
In one embodiment of this invention, remove before first adhesive tape and the plasticity glue material, more comprise making plasticity glue material be separated from oral area.
In one embodiment of this invention, the method that makes plasticity glue material be separated from oral area comprises and adds thermoplasticity glue material.
In one embodiment of this invention, the material of plasticity glue material comprises liquid glue.
In one embodiment of this invention, the method for solidifying plasticity glue material comprises with ultraviolet light and being heating and curing.
Compared to existing wafer grinding method, the present invention, improves the yield of wafer relatively, thereby makes the wafer after the grinding have intact cancellate peristome to provide suitable protection to the wafer in grinding because of adopting plasticity glue material.
[description of drawings]
Fig. 1 is the schematic diagram that breaks in the existing grinding wafer process.
Fig. 2 A～Fig. 2 F is the schematic diagram of the wafer grinding method of one embodiment of the invention.
Fig. 3 A～3C is the schematic diagram of the wafer grinding method of another embodiment of the present invention.
[specific embodiment]
For allowing above-mentioned purpose of the present invention, feature and advantage become apparent, preferred embodiment of the present invention cited below particularly, and conjunction with figs. are described in detail below:
Please refer to Fig. 2 A～Fig. 2 F is the schematic diagram of the wafer grinding method of one embodiment of the invention.Please refer to the following step:
At first, first step provides a wafer 200, and wafer has first 202, second 204 and a plurality of peristome 206 that is depressed in first 202, and wafer 200 has a thickness d.
Please refer to Fig. 2 A, in the first step of present embodiment, first 202 to wafer 200 is carried out dry-etching or Wet-type etching, so that first 202 of wafer 200 forms a plurality of peristomes 206 (or cavity), and the degree of depth of these peristomes 206 is less than the thickness d of wafer 200.
Then, second step is to insert a plasticity glue material 210 in these peristomes 206, and solidifies plasticity glue material 210.Plasticity glue material 210 for example is to be subjected to thermoset liquid glue.
Please refer to Fig. 2 B, in second step of present embodiment, insert the method for plasticity glue material 210 in these peristomes 206 comprise with the mode of a glue fill up each peristome 206 or the rotation gluing mode fill up each peristome 206.Plasticity glue material 210 is after being heated or producing cross-linking reaction with ultraviolet light heating and solidify; as be all wafer 200 and cover a protecting colloid; it is filled in each peristome 206, allows the intensity of wafer 200 be unlikely to die down because of etching open oral area 206, thus protection wafer 200.
Then, third step is to carry out a grinding steps, so that the thickness d thinning of wafer 200.Wherein grinding steps comprises: attach one first adhesive tape 220 first 202 in wafer 200, and make second 204 of wafer 200 up; With a grinding pad second 204 of wafer 200 carried out comprehensive grinding, up to manifesting these peristomes 206 and plasticity glue material 210; And remove first adhesive tape 220 and plasticity glue material 210.
Please refer to Fig. 2 C～Fig. 2 D, in the third step of present embodiment, when first adhesive tape 220 is attached at first 202 of wafer 200 and wafer 200 second 204 up the time, grinding pad (figure does not show) with work-table of chemicomechanical grinding mill carries out comprehensive grinding to second 204, with the thickness d of thinning wafer 200.Therefore at this moment, the peristome 206 of wafer 200 is filled up by plasticity glue material 210, and the white residue that removes by grinding pad can leave second 204 of wafer 200 along with cleaning solution, can not be stuck in the peristome 206.In addition, wafer 200 is subjected to the suitable protection of plasticity glue material 210 in process of lapping, is difficult for producing major defect such as break, thereby improves its yield.
In Fig. 2 E～Fig. 2 F, remove before first adhesive tape 220 and the plasticity glue material 210, first counter-rotating wafer 200 is so that first 202 of wafer 200 and first adhesive tape 220 are up.Then, attach one second adhesive tape 230 second 204 again in wafer 200.At last, remove first adhesive tape 220 and plasticity glue material 210.It should be noted that the mode that removes first adhesive tape 220 and plasticity glue material 210 for example is to add thermoplasticity glue material 210, at this moment, the viscosity of plasticity glue material 210 weakens, and plasticity glue material 210 is subjected to thermal contraction and is easy to break away from these peristomes 206.As long as therefore lift off first adhesive tape 220, can remove plasticity glue material 210 easily.
Fig. 3 A～3C is the schematic diagram of the wafer grinding method of another embodiment of the present invention.Carry out the Wet-type etching of high-aspect-ratio as first 302 of wafer 300 and form a plurality of when being through to second 304 peristome (or cavity), the degree of depth of these peristomes 306 equals the thickness d of wafer 300, at this moment, first step is that wafer 300 is attached on first adhesive tape 310, then, second step is to insert a plasticity glue material 320 in these peristomes 306, and solidifies plasticity glue material 320.Then, third step is to carry out a grinding steps, so that the thickness d thinning of wafer 300.Equally, the peristome 306 of wafer 300 is subjected to the protection of plasticity glue material 320, is difficult for producing breaking or blocking major defect such as white residue, thereby improves its yield.In addition, the mode of removing plasticity glue material 320 is to heat so that the viscosity of plasticity glue material 320 weakens, and plasticity glue material 320 is subjected to thermal contraction and is easy to break away from these peristomes 306.As long as therefore lift off first adhesive tape 310, can remove plasticity glue material 320 easily.
By above explanation as can be known; the present invention utilizes plasticity glue material to provide suitable protection to the wafer in grinding; improve the yield of wafer relatively; so that the wafer after grinding has intact cancellate peristome (or cavity); in order to carry out the package fabrication process of follow-up MEMS system, so that the MEMS device is sealed in each cavity of wafer.
Claims (13)
1. wafer grinding method, it is characterized in that: described wafer grinding method comprises:
One wafer is provided, and described wafer has first, second and a plurality ofly be depressed in described first peristome, and described wafer has a thickness;
Insert a plasticity glue material in described peristome, and solidify described plasticity glue material; And carry out a grinding steps, so that the described thickness thinning of described wafer.
2. wafer grinding method as claimed in claim 1 is characterized in that: described peristome comprises with dry-etching formation, and the degree of depth of described peristome is less than the described thickness of described wafer.
3. wafer grinding method as claimed in claim 1 is characterized in that: described peristome comprises with Wet-type etching formation, and the degree of depth of described peristome is smaller or equal to the described thickness of described wafer.
4. wafer grinding method as claimed in claim 1 is characterized in that: insert the method for a plasticity glue material in described peristome and comprise a glue or rotation gluing.
5. wafer grinding method as claimed in claim 1 is characterized in that: the step of grinding comprises: attach one first adhesive tape described first in described wafer, and described second of described wafer is faced up;
With a grinding pad described second face of described wafer is carried out comprehensive grinding, up to manifesting described peristome and described plasticity glue material; And
Remove described first adhesive tape and described plasticity glue material.
6. wafer grinding method as claimed in claim 5 is characterized in that: described wafer grinding method comprises that more attaching one second adhesive tape is in described second of described wafer.
7. wafer grinding method as claimed in claim 5 is characterized in that: grind before described second of described wafer, more comprise described second of described wafer is faced up.
8. wafer grinding method as claimed in claim 7 is characterized in that: remove before described first adhesive tape and the described plasticity glue material, more comprise the described wafer of counter-rotating, so that described first the facing up of described wafer.
9. wafer grinding method as claimed in claim 8 is characterized in that: after the described wafer that reverses, more comprise attaching one second adhesive tape in described second of described wafer.
10. wafer grinding method as claimed in claim 5 is characterized in that: remove before described first adhesive tape and the described plasticity glue material, more comprise making described plasticity glue material break away from described peristome.
11. wafer grinding method as claimed in claim 10 is characterized in that: the method that makes described plasticity glue material break away from described peristome comprises the described plasticity glue material of heating.
12. wafer grinding method as claimed in claim 1 is characterized in that: the material of described plasticity glue material comprises liquid glue.
13. wafer grinding method as claimed in claim 1 is characterized in that: the method for solidifying described plasticity glue material comprises with ultraviolet light and being heating and curing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101518394A CN101927454B (en) | 2009-06-23 | 2009-06-23 | Wafer grinding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101518394A CN101927454B (en) | 2009-06-23 | 2009-06-23 | Wafer grinding method |
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| Publication Number | Publication Date |
|---|---|
| CN101927454A true CN101927454A (en) | 2010-12-29 |
| CN101927454B CN101927454B (en) | 2012-07-04 |
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| CN2009101518394A Active CN101927454B (en) | 2009-06-23 | 2009-06-23 | Wafer grinding method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104741985A (en) * | 2013-12-30 | 2015-07-01 | 上海力涛精密机械有限公司 | Workpiece internal circle and external circle grinding method |
| CN105448643A (en) * | 2014-06-26 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Wafer processing method |
| CN107731727A (en) * | 2017-09-26 | 2018-02-23 | 上海华虹宏力半导体制造有限公司 | The processing method of wafer |
| CN110098116A (en) * | 2019-03-29 | 2019-08-06 | 合肥新汇成微电子有限公司 | A kind of grinding wafer technique |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1247443C (en) * | 2003-03-21 | 2006-03-29 | 中国电子科技集团公司第十三研究所 | Dry deeply etching silicone wafer manufacture |
| CN100528736C (en) * | 2007-11-20 | 2009-08-19 | 东南大学 | Method for manufacturing wafer-level MEMS micro channel |
-
2009
- 2009-06-23 CN CN2009101518394A patent/CN101927454B/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104741985A (en) * | 2013-12-30 | 2015-07-01 | 上海力涛精密机械有限公司 | Workpiece internal circle and external circle grinding method |
| CN105448643A (en) * | 2014-06-26 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Wafer processing method |
| CN105448643B (en) * | 2014-06-26 | 2018-09-07 | 中芯国际集成电路制造(上海)有限公司 | The processing method of wafer |
| CN107731727A (en) * | 2017-09-26 | 2018-02-23 | 上海华虹宏力半导体制造有限公司 | The processing method of wafer |
| CN110098116A (en) * | 2019-03-29 | 2019-08-06 | 合肥新汇成微电子有限公司 | A kind of grinding wafer technique |
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| Publication number | Publication date |
|---|---|
| CN101927454B (en) | 2012-07-04 |
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