CN101927453B - Grinding device of shallow trench isolation structure - Google Patents
Grinding device of shallow trench isolation structure Download PDFInfo
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- CN101927453B CN101927453B CN200910031729.4A CN200910031729A CN101927453B CN 101927453 B CN101927453 B CN 101927453B CN 200910031729 A CN200910031729 A CN 200910031729A CN 101927453 B CN101927453 B CN 101927453B
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Abstract
The invention relates to a grinding device of a shallow trench isolation structure, comprising a grinding part, a monitoring part and a control part. The grinding part is used to grind a silicon dioxide layer on a silicon nitride layer. The monitoring part is used to project downgoing monitoring light to a grinding surface and receiving upgoing light reflected by the grinding surface so as to generate induction signals corresponding to the upgoing light. The control part is used to carry out preset comparison according to the induction signals and then determine whether the grinding surface reaches the dividing line between the silicon nitride layer and the silicon dioxide layer, and generate corresponding control signals to control grinding motion of the grinding part. The invention also provides a corresponding grinding method of the shallow trench isolation structure.
Description
[technical field]
The present invention relates to a kind of semiconductor technology, the lapping device of the fleet plough groove isolation structure particularly in a kind of semiconductor fabrication process and method.
In semiconductor processing, the isolation between MOS device active area adopts shallow trench isolation from the mode of (Shallow Trench Isolation) more.
A kind of forming process of fleet plough groove isolation structure comprises: form the first oxide layer and nitration case respectively at substrate surface; Etching is to form groove; The second oxide layer is formed at groove and nitration case surface deposition; Grind the second oxide layer to nitration case interface.
When determining described interface, usually have measured resistance value, measure grinding thickness, measure residual thickness and motor rotary speed calculating remaining time, measure abrasion friction power, the method such as curent change in measurement drive motors.From reality grinding, grinding all can not be stopped exactly at interface place.
In view of this, be necessary to provide a kind of accurately to judge separation thus stop the lapping device of the fleet plough groove isolation structure ground exactly.
This also, there is a need to provide a kind of Ginding process that accurately can judge the fleet plough groove isolation structure of above-mentioned separation method.
A lapping device for fleet plough groove isolation structure, comprises means of abrasion, monitoring part and control section; Described means of abrasion is for grinding the silicon dioxide layer be formed on silicon nitride layer; Described monitoring part for projecting descending monitoring light to abradant surface, and receives the up light through abradant surface reflection, to generate the induced signal corresponding to described up light; Described control section is used for carrying out predetermined determining whether described abradant surface is positioned at the boundary of described silicon nitride layer and described silicon dioxide layer more afterwards according to described induced signal, and generates corresponding control signal, to control the grinding of described means of abrasion.
A Ginding process for fleet plough groove isolation structure, comprising:
Grind the silicon dioxide layer be deposited on silicon nitride layer;
Project descending detection light on abradant surface;
Receive the up light through reflection;
Generate the influence value with described up photophase;
Predetermined comparison is carried out, to determine whether current abradant surface arrives the boundary of described silicon nitride layer and described silicon dioxide layer according to described influence value;
Determine whether to continue grinding according to comparative result.
According to lapping device and the method for this fleet plough groove isolation structure, due to SiN layer and SiO
2layer is different with reflected intensity to light reflectance, can judge to be ground to SiN layer and SiO when sensing that reverberation relevant parameter changes
2the boundary of layer, thus determine abrasion site, accurately stop grinding.
[accompanying drawing explanation]
Fig. 1 is a kind of generalized section of fleet plough groove isolation structure.
Fig. 2 is the structural representation of a kind of execution mode of lapping device of fleet plough groove isolation structure of the present invention.
Fig. 3 is the structural representation of the control section 30 shown in Fig. 2.
Fig. 4 is the flow chart of a kind of execution mode of the Ginding process of fleet plough groove isolation structure of the present invention.
Fig. 5 is the structural representation of control section in another execution mode of the lapping device of fleet plough groove isolation structure of the present invention.
Fig. 6 is the flow chart of the another kind of execution mode of the Ginding process of fleet plough groove isolation structure of the present invention.
Fig. 7 is the structural representation of control section in the 3rd execution mode of the lapping device of fleet plough groove isolation structure of the present invention.
Fig. 8 is the flow chart of the 3rd execution mode of the Ginding process of fleet plough groove isolation structure of the present invention.
Fig. 9 is the structural representation of control section in the 4th execution mode of the lapping device of fleet plough groove isolation structure of the present invention.
Figure 10 is the flow chart of the 4th execution mode of the Ginding process of fleet plough groove isolation structure of the present invention.
[embodiment]
As shown in Figure 1, a kind of fleet plough groove isolation structure be formed on wafer 40 comprise substrate 802, the SiO be formed on substrate 802
2layer 804, SiN layer 806, groove 808 and the 2nd SiO be formed in SiN layer 806 and in groove 808
2layer 810.For the requirement of subsequent technique, at the 2nd SiO
2after layer 810 is formed, need to enter constitution grinding to it, the terminal of grinding is at SiN layer 806 and the 2nd SiO
2on the interface of layer 810.
As shown in Figure 2, a kind of execution mode of the lapping device of fleet plough groove isolation structure of the present invention comprises means of abrasion 10, monitoring part 20 and control section 30.Means of abrasion 10 is for grinding the fleet plough groove isolation structure on wafer 40, and namely grinding is formed in the 2nd SiO on SiN layer 806 surface
2layer 810.Monitoring result for monitoring the abradant surface of wafer 40, and is fed back to control section 30 by monitoring part 20.Control section 30 thus according to monitoring part 20 monitoring result control means of abrasion 10 in real time, comprise control its start/stop grinding, grinding rate etc.According to the monitoring result of monitoring part 20, control section 30 can control means of abrasion 10 and stop grinding when means of abrasion 10 is ground to the interface between silicon nitride and silicon dioxide.
Means of abrasion 10 comprises plummer 102, abrasive body 104, drive division 106.Plummer 102 for carrying and fixing wafer 40 in determining position, and drives wafer 40 around axial rotation in process of lapping.Abrasive body 104 grinds wafer 40 under the driving of drive division 106.Under the control of control section 30, drive division 106 can carry out comprising rotation around axis and movement vertically, thus can control dynamics that abrasive body 104 carries out grinding and thickness.
Monitoring part 20 comprises light source 202, first set of lenses 204, spectroscope 206, second set of lenses 208, the 3rd set of lenses 210, optical receiver 212.The operation principle of monitoring part 20 is: light source 202 sends monitoring light beam; Light-metering bundle is shaped to as descending directional light through the first set of lenses 204; Descending light is converged onto on the abradant surface of wafer 40 through the second set of lenses 208 after spectroscope 206; The up light reflected through the abradant surface of wafer 40 is shaped as up directional light through the second set of lenses 208 again; Up light is reflected and is assembled to optical receiver 212 through the 3rd set of lenses 210 when through spectroscope 206; The up light received responded to by optical receiver 212, and generate the induced signal corresponding to up luminous intensity.The induced signal that optical receiver 212 generates is fed back to control section 30 by the monitoring result as monitoring part 20.Due to the 2nd SiO
2layer is 810 different from SiN layer 806 pairs of light reflectance, and the intensity of the up light thus obtained after it reflects is also variant, can accordingly up light intensity and judge whether the position residing for current abradant surface has arrived described SiN layer 806 and the 2nd SiO
2the boundary of layer 810.
As shown in Figure 3, control section 30 comprises signal receiving module 302, comparison module 304 and output module 306.Signal receiving module 302 is connected with the optical receiver 212 and comparison module 304 of monitoring part 20.Comparison module 304 connects output module 306 simultaneously.Output module 306 is connected with drive division 106 with the plummer 102 of means of abrasion 10.Thus the control signal that control section 30 can be exported by output module 306 controls the grinding of means of abrasion 10 pairs of wafers 40.
The induced signal that signal receiving module 302 generates for receiving optical receiver 212, and be transferred to comparison module 304.
Comparison module 304 compares for the induced signal corresponding to luminous intensity that passed on by signal receiving module 302 and predetermined threshold value.According to SiN layer 806 and the 2nd SiO
2layer 810 pairs of light reflectance difference, up light will produce the up light of reflection of varying strength on two-layer surface.If light intensity signal falls within the fluctuation range of Near Threshold, can think and can stop the grinding to wafer 40 in the current surface being ground to SiN layer 806; If light intensity signal does not fall within the fluctuation range of Near Threshold, then can think means of abrasion 10 still to the 2nd SiO
2layer 810 carries out grinding and should continue grinding.Comparison module 304 thus generate compare result signal according to this comparative result and deliver to output module 306.
Output module 306 generates corresponding control signal for the compare result signal sent according to comparison module 304, and control signal is passed out to corresponding control object, as plummer 102 and the drive division 106 of means of abrasion 10, thus the grinding to wafer 40 can be controlled.
According to the lapping device of this fleet plough groove isolation structure, due to SiN layer and SiO
2layer is different to light reflectance, when sensing the up luminous intensity of the reflection of SiN layer, namely can judge to be ground to SiN layer and SiO
2the boundary of layer, thus determine abrasion site, accurately stop grinding.
Figure 4 shows that the flow chart of a kind of execution mode of the Ginding process of fleet plough groove isolation structure of the present invention.Lapping device below in conjunction with the fleet plough groove isolation structure shown in Fig. 2, Fig. 3 is that example is described, and this Ginding process comprises the following steps:
Step S402, means of abrasion 10 pairs of wafers 40 is positioned at the 2nd SiO on SiN layer 806 surface
2layer 810 grinds.
Step S404, light source 202 produces monitoring light, forms descending light and project on the abradant surface of wafer 40 after the first set of lenses 204, spectroscope 206 and the second set of lenses 208.
Step S406, the up light mirror 206 that is split after the second set of lenses 208 through abradant surface reflection reflexes to optical receiver 212.
Step S408, optical receiver 212 generates corresponding induced signal according to the intensity of received up light and induced signal is delivered to control section 30.
Step S410, induced signal is delivered to comparison module 304 by the signal receiving module 302 of control section 30, and itself and predetermined threshold value compare by comparison module 304, and generates corresponding compare result signal and be sent to output module 306.If compare result signal reflection induced signal does not fall into the fluctuation range of Near Threshold, then continue S402 and monitor to step S410.
Step S412, if compare result signal reflection induced signal has fallen into the fluctuation range of Near Threshold, then output module 306 has generated parking toll signal and has delivered to corresponding control object.
Step S414, means of abrasion 10 stops grinding according to parking toll signal.
According to the Ginding process of this fleet plough groove isolation structure, due to SiN layer and SiO
2layer is different to light reflectance, when sensing the up luminous intensity of the reflection of SiN layer, namely can judge to be ground to SiN layer and SiO
2the boundary of layer, thus determine abrasion site, accurately stop grinding.
As shown in Figure 5, in another execution mode of the lapping device of fleet plough groove isolation structure of the present invention, control section 50 comprises signal receiving module 502, temporary storage module 504, comparison module 506 and output module 508.Signal receiving module 502 and the monitoring optical receiver 212 of part 20 and temporary storage module 504, comparison module 506 are connected.Comparison module 506 is also connected with temporary storage module 504 and output module 508.
The induced signal that signal receiving module 502 generates for receiving optical receiver 212, and be transferred to temporary storage module 504 or comparison module 506.
Temporary storage module 504 for the temporary induced signal passed on by signal receiving module 502, and can be answered the request of comparison module 506 and be read by kept in induced signal.
Comparison module 506 for by current for signal receiving module 502 induced signal that passes on and temporary storage module 504 the prime induced signal of keeping in compare.According to SiN layer 806 and the 2nd SiO
2layer 810 pairs of light reflectance difference, up light will produce the up light of reflection of varying strength on two-layer surface.If comparison module 306 by finding to there is the difference exceeding predetermined threshold value therebetween to the comparison of twice light intensity signal, then can be thought and can stop the grinding to wafer 40 in the current surface being ground to SiN layer 806; Otherwise if twice light intensity signal is more or less the same, comparison module 506 comparative result does not exceed predetermined threshold value, then can think means of abrasion 10 still to the 2nd SiO
2layer 810 carries out grinding and should continue grinding.Comparison module 506 thus generate compare result signal according to this comparative result and deliver to output module 508.
Output module 508 generates corresponding control signal for the compare result signal sent according to comparison module 506, and control signal is passed out to corresponding control object, as plummer 102 and the drive division 106 of means of abrasion 10, thus the grinding to wafer 40 can be controlled.
According to the lapping device of this fleet plough groove isolation structure, due to SiN layer and SiO
2layer is different to light reflectance, when sensing the change of reflecting up luminous intensity, namely can judge to be ground to SiN layer and SiO
2the boundary of layer, thus determine abrasion site, accurately stop grinding.
As shown in Figure 6, the flow chart of the another kind of execution mode of the Ginding process of fleet plough groove isolation structure of the present invention.Lapping device below in conjunction with the fleet plough groove isolation structure shown in Fig. 2, Fig. 5 is that example is described, and this Ginding process comprises the following steps:
Step S602, means of abrasion 10 pairs of wafers 40 is positioned at the 2nd SiO on SiN layer 806 surface
2layer 810 grinds.
Step S604, light source 202 produces monitoring light, forms descending light and project on the abradant surface of wafer 40 after the first set of lenses 204, spectroscope 206 and the second set of lenses 208.
Step S606, the up light mirror 206 that is split after the second set of lenses 208 through abradant surface reflection reflexes to optical receiver 212.
Step S608, optical receiver 212 generates corresponding induced signal according to the intensity of received up light and induced signal is delivered to control section 50.
Step S610, induced signal is delivered to temporary storage module 504, comparison module 506 by the signal receiving module 502 of control section 50, and induced signal at the corresponding levels is kept in by temporary storage module 504.
Step S612, after comparison module 506 receives induced signal at the corresponding levels, is read by its temporary prime induced signal by temporary storage module 504.
Step S614, induced signal at the corresponding levels and prime induced signal compare by comparison module 506, and generate corresponding compare result signal and be sent to output module 508.If the difference between compare result signal reflection two-stage induced signal does not exceed the fluctuation range of predetermined Near Threshold, then continue S602 and monitor to step S614.
Step S616, if compare result signal reflection two-stage induced signal has exceeded predetermined threshold value, then output module 508 has generated parking toll signal and has delivered to corresponding control object.
Step S618, means of abrasion 10 stops grinding according to parking toll signal.
According to the Ginding process of this fleet plough groove isolation structure, due to SiN layer and SiO
2layer is different to light reflectance, when sensing the change of reflecting up luminous intensity, namely can judge to be ground to SiN layer and SiO
2the boundary of layer, thus determine abrasion site, accurately stop grinding.
As shown in Figure 7, in another execution mode of the lapping device of fleet plough groove isolation structure of the present invention, control section 70 comprises signal receiving module 702, computing module 704, comparison module 706 and output module 708.Signal receiving module 702 is connected with the optical receiver 212 and computing module 704 of monitoring part 20.Comparison module 706 connects computing module 704 respectively and output module 708 is connected.
The induced signal that signal receiving module 702 generates for receiving optical receiver 212, and be transferred to computing module 704.
Computing module 704 calculates the reflectivity of the abradant surface corresponding to received up light for the induced signal passed on according to signal receiving module 702.
Comparison module 706 for by computing module 704 the reflectivity calculated and predetermined threshold value compare.Due to SiN layer 806 and the 2nd SiO
2layer 810 pairs of light reflectance difference, if the reflectivity calculated falls within the fluctuation range of Near Threshold, can think and can stop the grinding to wafer 40 in the current surface being ground to SiN layer 806; If the reflectivity calculated does not fall within the fluctuation range of Near Threshold, then can think means of abrasion 10 still to the 2nd SiO
2layer 810 carries out grinding and should continue grinding.Comparison module 706 thus generate compare result signal according to this comparative result and deliver to output module 708.
Output module 708 generates corresponding control signal for the compare result signal sent according to comparison module 706, and control signal is passed out to corresponding control object, as plummer 102 and the drive division 106 of means of abrasion 10, thus the grinding to wafer 40 can be controlled.
According to the lapping device of this fleet plough groove isolation structure, due to SiN layer and SiO
2layer is different to light reflectance, when sensing the reflectivity of SiN layer, namely can judge to be ground to SiN layer and SiO
2the boundary of layer, thus determine abrasion site, accurately stop grinding.
Figure 8 shows that the flow chart of a kind of execution mode of the Ginding process of fleet plough groove isolation structure of the present invention.Lapping device below in conjunction with the fleet plough groove isolation structure shown in Fig. 2, Fig. 7 is that example is described, and this Ginding process comprises the following steps:
Step S762, means of abrasion 10 pairs of wafers 40 is positioned at the 2nd SiO on SiN layer 806 surface
2layer 810 grinds.
Step S764, light source 202 produces monitoring light, forms descending light and project on the abradant surface of wafer 40 after the first set of lenses 204, spectroscope 206 and the second set of lenses 208.
Step S766, the up light mirror 206 that is split after the second set of lenses 208 through abradant surface reflection reflexes to optical receiver 212.
Step S768, optical receiver 212 generates corresponding induced signal according to the intensity of received up light and induced signal is delivered to control section 70.
Step S770, induced signal is delivered to computing module 704 by the signal receiving module 702 of control section 70, and computing module 704 calculates the reflectivity of current abradant surface accordingly.
Step S772, comparison module 706 by computing module 704 the reflectivity calculated and predetermined threshold value compare, and generate corresponding compare result signal and be sent to output module 708.If compare result signal reflection reflectivity does not fall into the fluctuation range of Near Threshold, then continue S762 and monitor to step S772.
Step S774, if compare result signal reflection reflectivity has fallen into the fluctuation range of Near Threshold, then output module 708 has generated parking toll signal and has delivered to corresponding control object.
Step S776, means of abrasion 10 stops grinding according to parking toll signal.
According to the Ginding process of this fleet plough groove isolation structure, due to SiN layer and SiO
2layer is different to light reflectance, when sensing the reflectivity of SiN layer, namely can judge to be ground to SiN layer and SiO
2the boundary of layer, thus determine abrasion site, accurately stop grinding.
As shown in Figure 9, in another execution mode of the lapping device of fleet plough groove isolation structure of the present invention, control section 90 comprises signal receiving module 902, computing module 904, temporary storage module 906, comparison module 908 and output module 910.Signal receiving module 902 is connected with the optical receiver 212 and computing module 904 of monitoring part 20.Temporary storage module 906 is connected with computing module 904 and comparison module 908.Comparison module 908 is also connected with computing module 904 and output module 910.
The induced signal that signal receiving module 910 generates for receiving optical receiver 212, and be transferred to computing module 904.
Computing module 904 calculates the reflectivity of the abradant surface corresponding to received up light for the induced signal passed on according to signal receiving module 902.
Temporary storage module 906 for temporary by computing module 904 the reflectivity at the corresponding levels calculated, and the request of comparison module 908 can be answered and kept in reflectivity is read.
Comparison module 908 for by current for computing module 904 reflectivity at the corresponding levels calculated and temporary storage module 906 the prime reflectivity of keeping in compare.Due to SiN layer 806 and the 2nd SiO
2layer 810 pairs of light reflectance difference, if comparison module 908 is by finding to there is the difference exceeding predetermined threshold value therebetween to the comparison of twice reflectivity, then can thinks and can stop the grinding to wafer 40 in the current surface being ground to SiN layer 806; Otherwise if twice reflectivity is more or less the same, comparison module 908 comparative result does not exceed predetermined threshold value, then can think means of abrasion 10 still to the 2nd SiO
2layer 810 carries out grinding and should continue grinding.Comparison module 908 thus generate compare result signal according to this comparative result and deliver to output module 910.
Output module 910 generates corresponding control signal for the compare result signal sent according to comparison module 908, and control signal is passed out to corresponding control object, as plummer 102 and the drive division 106 of means of abrasion 10, thus the grinding to wafer 40 can be controlled.
According to the lapping device of this fleet plough groove isolation structure, due to SiN layer and SiO
2layer is different to light reflectance, when the change sensing reflectivity, namely can judge to be ground to SiN layer and SiO
2the boundary of layer, thus determine abrasion site, accurately stop grinding.
As shown in Figure 10, the flow chart of the another kind of execution mode of the Ginding process of fleet plough groove isolation structure of the present invention.Lapping device below in conjunction with the fleet plough groove isolation structure shown in Fig. 2, Fig. 9 is that example is described, and this Ginding process comprises the following steps:
Step S962, means of abrasion 10 pairs of wafers 40 is positioned at the 2nd SiO on SiN layer 806 surface
2layer 810 grinds.
Step S964, light source 202 produces monitoring light, forms descending light and project on the abradant surface of wafer 40 after the first set of lenses 204, spectroscope 206 and the second set of lenses 208.
Step S966, the up light mirror 206 that is split after the second set of lenses 208 through abradant surface reflection reflexes to optical receiver 212.
Step S968, optical receiver 212 generates corresponding induced signal according to the intensity of received up light and induced signal is delivered to control section 90.
Step S970, the reflectivity that induced signal is delivered to computing module 904 by signal receiving module 902, computing module 904 calculates current abradant surface accordingly of control section 90.
Step S972, temporary storage module 906 by computing module 904 the reflectivity at the corresponding levels calculated keep in.
Step S974, after comparison module 908 receives reflectivity at the corresponding levels, is read by its temporary prime reflectivity by temporary storage module 906.
Step S976, reflectivity at the corresponding levels and prime reflectivity compare by comparison module 908, and generate corresponding compare result signal and be sent to output module 910.If the difference between compare result signal reflection two-stage reflectivity does not exceed the fluctuation range of predetermined Near Threshold, then continue S962 and monitor to step S976.
Step S978, if compare result signal reflection two-stage reflectivity has exceeded predetermined threshold value, then output module 910 has generated parking toll signal and has delivered to corresponding control object.
Step S980, means of abrasion 10 stops grinding according to parking toll signal.
According to the Ginding process of this fleet plough groove isolation structure, due to SiN layer and SiO
2layer is different to light reflectance, when the change sensing reflectivity, namely can judge to be ground to SiN layer and SiO
2the boundary of layer, thus determine abrasion site, accurately stop grinding.
Claims (4)
1. a lapping device for fleet plough groove isolation structure, comprises means of abrasion, monitoring part and control section; Described means of abrasion is for grinding the silicon dioxide layer be formed on silicon nitride layer; It is characterized in that: described monitoring part comprises light source, described light source produces monitoring light, after the first set of lenses, spectroscope and the second set of lenses, form descending light projects on the abradant surface of wafer, through abradant surface reflection up light after described second set of lenses by described dichroic mirror to optical receiver, described optical receiver generates corresponding induced signal according to the intensity of received up light and induced signal is delivered to control section; Described control section is used for carrying out predetermined determining whether described abradant surface arrives the boundary of described silicon nitride layer and described silicon dioxide layer more afterwards according to described induced signal, and generates corresponding control signal, to control the grinding of described means of abrasion,
Described control section comprises signal receiving module, comparison module and output module; Signal receiving module and monitoring part optical receiver and comparison module be connected, comparison module connects output module simultaneously, and output module is connected with drive division with the plummer of means of abrasion; Described signal receiving module is for receiving described induced signal and described induced signal being delivered to described comparison module; Described comparison module is used for being compared to the threshold value of predetermined reflection luminous intensity by described induced signal and generating corresponding compare result signal; Described output module is used for generating corresponding described control signal according to described compare result signal.
2. a lapping device for fleet plough groove isolation structure, comprises means of abrasion, monitoring part and control section; Described means of abrasion is for grinding the silicon dioxide layer be formed on silicon nitride layer; It is characterized in that: described monitoring part comprises light source, described light source produces monitoring light, after the first set of lenses, spectroscope and the second set of lenses, form descending light projects on the abradant surface of wafer, through abradant surface reflection up light after described second set of lenses by described dichroic mirror to optical receiver, described optical receiver generates corresponding induced signal according to the intensity of received up light and induced signal is delivered to control section; Described control section is used for carrying out predetermined determining whether described abradant surface arrives the boundary of described silicon nitride layer and described silicon dioxide layer more afterwards according to described induced signal, and generates corresponding control signal, to control the grinding of described means of abrasion,
Described control section comprises signal receiving module, temporary storage module, comparison module and output module; Optical receiver and temporary storage module, the comparison module of signal receiving module and monitoring part are connected, and comparison module is connected with temporary storage module and output module; Described signal receiving module is for receiving described induced signal and described induced signal being delivered to described temporary storage module and described comparison module; Described temporary storage module is used for described induced signal to keep in; Described comparison module be used for by described induced signal and described temporary storage module the prime induced signal of keeping in compare and generate corresponding compare result signal; Described output module is used for generating corresponding described control signal according to described compare result signal.
3. a lapping device for fleet plough groove isolation structure, comprises means of abrasion, monitoring part and control section; Described means of abrasion is for grinding the silicon dioxide layer be formed on silicon nitride layer; It is characterized in that: described monitoring part comprises light source, described light source produces monitoring light, after the first set of lenses, spectroscope and the second set of lenses, form descending light projects on the abradant surface of wafer, through abradant surface reflection up light after described second set of lenses by described dichroic mirror to optical receiver, described optical receiver generates corresponding induced signal according to the intensity of received up light and induced signal is delivered to control section; Described control section is used for carrying out predetermined determining whether described abradant surface arrives the boundary of described silicon nitride layer and described silicon dioxide layer more afterwards according to described induced signal, and generates corresponding control signal, to control the grinding of described means of abrasion,
Described control section comprises signal receiving module, computing module, comparison module and output module; Signal receiving module and monitoring part optical receiver and computing module be connected, comparison module is connected with computing module and output module respectively; Described signal receiving module is for receiving described induced signal and described induced signal being delivered to described computing module; Described computing module is used for calculating the reflectivity of current abradant surface according to described induced signal and delivering to described comparison module; Described comparison module is used for being compared to the threshold value of predetermined reflection reflectivity by described reflectivity and generating corresponding compare result signal; Described output module is used for generating corresponding described control signal according to described compare result signal.
4. a lapping device for fleet plough groove isolation structure, comprises means of abrasion, monitoring part and control section; Described means of abrasion is for grinding the silicon dioxide layer be formed on silicon nitride layer; It is characterized in that: described monitoring part comprises light source, described light source produces monitoring light, after the first set of lenses, spectroscope and the second set of lenses, form descending light projects on the abradant surface of wafer, through abradant surface reflection up light after described second set of lenses by described dichroic mirror to optical receiver, described optical receiver generates corresponding induced signal according to the intensity of received up light and induced signal is delivered to control section; Described control section is used for carrying out predetermined determining whether described abradant surface arrives the boundary of described silicon nitride layer and described silicon dioxide layer more afterwards according to described induced signal, and generates corresponding control signal, to control the grinding of described means of abrasion,
Described control section comprises signal receiving module, computing module, temporary storage module, comparison module and output module; Signal receiving module and monitoring part optical receiver and computing module be connected, temporary storage module is connected with computing module and comparison module, and comparison module is also connected with computing module and output module; Described signal receiving module is for receiving described induced signal and described induced signal being delivered to described computing module; Described computing module is used for calculating the reflectivity of current abradant surface according to described induced signal and delivering to described temporary storage module and described comparison module; Described temporary storage module is used for described reflectivity to keep in; Described comparison module be used for by described reflectivity and described temporary storage module the prime reflectivity of keeping in compare and generate corresponding compare result signal; Described output module is used for generating corresponding described control signal according to described compare result signal.
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| CN102814727B (en) * | 2012-08-13 | 2015-05-06 | 无锡华润上华科技有限公司 | Method for chemically and mechanically grinding shallow trench isolation structure |
| CN103346102B (en) * | 2013-06-27 | 2016-01-27 | 上海华力微电子有限公司 | Detect the method for pretreatment potentiality |
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| CN107180751A (en) * | 2017-04-14 | 2017-09-19 | 天津华海清科机电科技有限公司 | Handle the control method of crystal column surface |
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| JP4542324B2 (en) * | 2002-10-17 | 2010-09-15 | 株式会社荏原製作所 | Polishing state monitoring device and polishing device |
| JP2005203729A (en) * | 2003-12-19 | 2005-07-28 | Ebara Corp | Substrate polishing apparatus |
| US7943287B2 (en) * | 2006-07-28 | 2011-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| CN101511539B (en) * | 2006-09-12 | 2012-08-22 | 株式会社荏原制作所 | Polishing apparatus and polishing method |
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2009
- 2009-06-20 CN CN200910031729.4A patent/CN101927453B/en active Active
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