CN101924472A - MOS tube and IGBT tube mixed bridge-circuit inverter type welding/cutting power supply - Google Patents
MOS tube and IGBT tube mixed bridge-circuit inverter type welding/cutting power supply Download PDFInfo
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Abstract
The invention relates to the field of welding/cutting power supply product, in particular an MOS tube and IGBT tube mixed bridge-circuit inverter type welding/cutting power supply. The MOS tube and IGBT tube mixed bridge-circuit inverter type welding/cutting power supply mainly comprises an input EMC circuit, a primary-side rectifying and filtering circuit, a mixed device inverter circuit, an isolation transformer, a secondary-side rectifying and filtering circuit and a main control board circuit, which are sequentially connected according to the current direction; a current enters the mixed device inverter circuit at the main control board circuit; the mixed device inverter circuit is formed by bridging four MOS tubes and four IGBT tubes. As the MOS tubes and the IGBT tubes form a mixed bridge circuit and two power switch devices are combined according to a certain rule and turned on/off according to a certain rule, the inverter frequency is relatively high, the calorific power of the power switch devices is relatively low, and the MOS tube and IGBT tube mixed bridge-circuit inverter type welding/cutting power supply is more energy-saving, material-saving and efficient than the traditional welding/cutting power supply.
Description
Technical field
The present invention relates to the welding/cutting power supply product scope, be specifically related to a kind of metal-oxide-semiconductor and IGBT pipe mixed bridge-circuit inverter type welding/cutting power supply.
Background technology
Welding/cutting power supply is a kind of supply unit that electric current and voltage is provided for welding arc or arc cutting.In various welding/cutting power supplies, the welding/cutting power supply with advantages such as energy-conservation, material-saving, efficient, environmental protection has only inverter type welding/cutting power supply.What present inverter type welding/cutting power supply mainly adopted is that metal-oxide-semiconductor inverter circuit and IGBT manage two kinds of inverter circuits, according to the characteristics of two kinds of different power switch semiconductor device as can be known: metal-oxide-semiconductor switching speed height, so the inverter circuit (the welding/cutting power supply reverse frequency of inverter circuit that adopts metal-oxide-semiconductor at present is generally all about 110KHz) that is fit to higher-frequency still, the metal-oxide-semiconductor conducting resistance is big, on-state loss is big, make that the welding/cutting power supply overall efficiency is difficult to improve, heating is serious, for its heat radiation facility of taking becomes complicated and expensive; The IGBT pipe is owing to be ambipolar, so tube voltage drop is very low during conducting, on-state loss is very little, but the switching speed of IGBT pipe is lower, but also the conditions of streaking of electric current when turn-offing is arranged, it is opened with Guan Douhui and produces very big loss, so can not under upper frequency, use (the welding/cutting power supply reverse frequency of inverter circuit that adopts the IGBT pipe at present is generally all about 20KHz), the transformer and the reactance of the inverter type welding/cutting power supply of this just feasible employing IGBT pipe all can not further reduce, at material-saving, energy-conservation aspect can not further promote.
Summary of the invention
[0004]
For overcoming above-mentioned defective, purpose of the present invention promptly is to provide a kind of metal-oxide-semiconductor and IGBT pipe mixed bridge-circuit inverter type welding/cutting power supply.
The objective of the invention is to be achieved through the following technical solutions:
A kind of metal-oxide-semiconductor of the present invention and IGBT pipe mixed bridge-circuit inverter type welding/cutting power supply comprise: be linked in sequence by current direction: input EMC circuit, primary side current rectifying and wave filtering circuit, hybrid device inverter circuit, isolating transformer, secondary side current rectifying and wave filtering circuit and master board circuit; Described electric current enters the hybrid device inverter circuit at master board circuit place; Described hybrid device inverter circuit is connect by four metal-oxide-semiconductors and four IGBT pipe bridges and forms, and four metal-oxide-semiconductors and four IGBT pipes are divided into two groups of metal-oxide-semiconductors and two groups of IGBT pipes respectively; Described master board circuit is to metal-oxide-semiconductor and the orderly respectively four groups of eight-path PWM signals of output of IGBT pipe of described hybrid device inverter circuit, allow the conducting simultaneously of same group metal-oxide-semiconductor and/or IGBT pipe, and allow the metal-oxide-semiconductor of another group and/or IGBT pipe and last group of metal-oxide-semiconductor and/or IGBT pipe between have phase difference the time conducting.
The present invention's " a kind of metal-oxide-semiconductor and IGBT pipe mixed bridge-circuit inverter type welding/cutting power supply " adopts metal-oxide-semiconductor and IGBT pipe to form mixed bridge-circuit.Allow two kinds of power switching devices make up according to certain rules, and turn on and off according to certain rules.Make whole inverter circuit can bring into play the advantage of metal-oxide-semiconductor switching speed, can bring into play the advantage of the low on-state pressure drop of IGBT pipe again.It is higher that this makes that the present invention has a reverse frequency, and the power switching device heating is less,, material-saving all more energy-conservation than any welding/cutting power supply in metal-oxide-semiconductor inverter type welding/cutting power supply and the IGBT pipe inverter type welding/cutting power supply, advantage such as efficient.
Description of drawings
In order to be easy to explanation, the present invention is done to describe in detail by following preferred embodiment and accompanying drawing.
Fig. 1 is a circuit working schematic flow sheet of the present invention;
Fig. 2 is a main loop circuit schematic diagram of the present invention;
Fig. 3 is a master board electrical schematic diagram of the present invention.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
See also Fig. 1, a kind of metal-oxide-semiconductor of the present invention and IGBT pipe mixed bridge-circuit inverter type welding/cutting power supply comprise: be linked in sequence by current direction: input EMC circuit 1, primary side current rectifying and wave filtering circuit 2, hybrid device inverter circuit 3, isolating transformer 4, secondary side current rectifying and wave filtering circuit 5 and master board circuit 6; Described electric current enters hybrid device inverter circuit 3 at master board circuit 6 places; Described hybrid device inverter circuit 3 is connect by four metal-oxide-semiconductors and four IGBT pipe bridges and forms, and four metal-oxide-semiconductors and four IGBT pipes are divided into two groups of metal-oxide-semiconductors and two groups of IGBT pipes respectively; Described master board circuit 6 is to metal-oxide-semiconductor and the orderly respectively four groups of eight-path PWM signals of output of IGBT pipe of described hybrid device inverter circuit 3, allow the conducting simultaneously of same group metal-oxide-semiconductor and/or IGBT pipe, and allow the metal-oxide-semiconductor of another group and/or IGBT pipe and last group of metal-oxide-semiconductor and/or IGBT pipe between have phase difference the time conducting.
Please referring to Fig. 2, the main loop circuit structural principle is specially:
Input filter circuit 1 is by mains switch S1, differential mode filter capacitor C34 and C38, and common mode filtering capacitor C 33, C35, C36, C7 and common mode filtering inductance L 1 are formed.The Disturbance in Power Net signal makes this welding/cutting power supply avoid outside electromagnetic interference by the filtering of above-mentioned filter, improves stability; Equally, the electromagnetic interference signal that this welding/cutting power supply produces can also can be made this welding/cutting power supply can not produce electromagnetic interference to external world by above-mentioned filter filtering, improves the stability of other equipment.
Primary side current rectifying and wave filtering circuit 2 is by rectifier bridge BR1 and capacitor C 40, C41, and C44 and resistance R 52 are formed.The alternating voltage electric current of sending in the welding/cutting power supply is rectified into dc voltage and current by rectifier bridge BR1, and through capacitor C 40, C41 is sent to hybrid device inverter circuit 3 after the filtering such as C44.Wherein: resistance R 52 is bleeder resistances, and C40 is held in the power down of releasing when shutdown, C41, and the electric charge in the C44 is to guarantee safety.
Hybrid device inverter circuit 3 is formed by four metal-oxide-semiconductor M9, M10, M11, M12 and four IGBT pipe IG1, IG2, IG3, IG4 bridge joints.Wherein the D of M9 and S respectively with link to each other corresponding of C of IG1 with E; The D of M10 and S respectively with link to each other corresponding of C of IG2 with E; The D of M11 and S respectively with link to each other corresponding of C of IG3 with E; The D of M12 and S respectively with link to each other corresponding of C of IG4 with E.R54, R53, R63, R64 are respectively the grid tandem drive resistance of four IGBT pipes; R55, R56, R61, R62 are respectively the grid tandem drive resistance of four metal-oxide-semiconductors, and R57 and C42; R58 and C43; R59 and C45; R60 and C46 are respectively four groups of hybrid device the two poles of the earth (D of MOSFET device and the S utmost point; The C of IGBT device and the E utmost point) resistance capaciting absorpting circuit in parallel.
Isolate transforming circuit 4 and taken on by the intermediate frequency transformer T5 with first side winding and secondary side winding, one of isolating transformer T5 primary side connects the brachium pontis mid point of inverter bridge, and another mid point of brachium pontis that connects inverter bridge behind the primary side current instrument transformer T4 is passed in the other end; Its secondary side is received secondary side current rectifying and wave filtering circuit 5, and secondary side current rectifying and wave filtering circuit 5 is one to have centre tapped full-wave rectifying circuit.First side winding and secondary winding are by the insulating material safe insulation.
Secondary side current rectifying and wave filtering circuit 5 is by fast-recovery commutation diode D23, D24 and capacitance-resistance absorption resistance R65, and R66 and capacitance-resistance absorb capacitor C 47, compositions such as C48.
Master board circuit 6 passes through socket A2, A3, and A4, deliver to four metal-oxide-semiconductor M9, M10, M11, M12 and four IGBT that four groups of eight-path PWM signals of A5 output are orderly respectively manage on IG1, IG2, IG3, the IG4, allow it by IG1 and IG4; IG2 and IG3 be conducting simultaneously respectively, and allows IG1 and IG2; IG3 and IG4 phasic difference 180 mutually
o
Conducting.Allow M9 and M12 equally; M10 and M11 be conducting simultaneously respectively, and allows M9 and M10; M11 and M12 phasic difference 180 mutually
o
Conducting.Such alternate conduction will be reverse into dc voltage and current midfrequent AC square-wave voltage electric current.
Wherein, described master control circuit board 6 will allow IGBT pipe IG1 than and it be connected in metal-oxide-semiconductor M9 on same brachium pontis a period of time t1 that lags behind and open and shift to an earlier date a period of time t2 shutoff; Allow IGBT pipe IG2 than and it be connected in metal-oxide-semiconductor M10 on same brachium pontis a period of time t1 that lags behind and open and shift to an earlier date a period of time t2 shutoff; Allow IGBT pipe IG3 than and it be connected in metal-oxide-semiconductor M11 on same brachium pontis a period of time t1 that lags behind and open and shift to an earlier date a period of time t2 shutoff; Allow IGBT pipe IG4 than and it be connected in metal-oxide-semiconductor M12 on same brachium pontis a period of time t1 that lags behind and open and shift to an earlier date a period of time t2 shutoff.Such hysteresis is opened the IGBT pipe and is turn-offed the IGBT pipe in advance and just makes when whole inverter circuit is worked, turning on and off by metal-oxide-semiconductor of pulse served as, the whole conduction period of pulse is then mainly served as by the IGBT pipe, so in the whole loss of inverter circuit: switching loss depends on metal-oxide-semiconductor, on-state loss then depends on the IGBT pipe.The low on-state loss of the low switch loss of metal-oxide-semiconductor and IGBT pipe combines dexterously, makes the loss of whole inverter become very low, and inversion efficiency is very high, and the inversion device heating is less.
Further, described master board circuit 6 is by the PWM pulse-width modulation circuit, pulse delay breaking circuit, isolated drive circuit, the given and current feedback circuit of electric current, current foldback circuit, under-voltage protecting circuit, and formation such as corresponding auxiliary circuit.
Wherein, described isolated drive circuit comprises: metal-oxide-semiconductor isolated drive circuit and IGBT pipe isolated drive circuit.
Please referring to Fig. 3, the master board circuit principle structure is specially:
1, introduce master board from the two 17V windings of T3 level of transformer by socket A8, by rectifier diode D18, D19, D20, C27 after the D21 rectification, circuit of three-terminal voltage-stabilizing integrated U4 (LM7815) is passed through in C28 filtering again, U5 (LM7915) and U6 (LM7805) voltage stabilizing.Output+15V respectively ,-15V ,+5V direct voltage, this group voltage are that circuit such as master board current feedback and PWM modulation and digital ammeter are powered.
2, resistance R 49, R50 and C32 form the welding current display circuit.
3, by integrated circuit U2D, Current Regulation potentiometer RT2, RT3, and potentiometer RT1, resistance R 46 and resistance R 47 are formed the electric current given circuit, and C21 and R36 form current feedback circuit.Integrated circuit U2C and resistance R 35, R34 voltage stabilizing didoe D16, capacitor C 20 grades are formed error amplifier, diode D12 and resistance R 33, R32 capacitor C 18 grades are formed error signal clamper, decay and filter circuit.
4; integrated circuit U1; U2A and U2B have formed under-voltage protection and current mode pwm circuit; wherein, integrated circuit U2A and on every side element form under-voltage protecting circuit, integrated circuit U2B and peripheral circuits thereof are formed the oblique wave compensation circuit; fast recovery diode D2; D3, D7, composition inverter circuit primary side midfrequent AC electric current waveforms such as D8 and sampling resistor R9 and high-frequency filter capacitor C11 adopt the whole stream of sample ﹑ ﹑ high-frequency filter circuit.
5, IGBT pipe isolated drive circuit comprises: IGBT pipe buffer circuit and IGBT pipe driving pulse rising edge of a pulse trailing edge shaping treatment circuit.MOSFET manages M1, M2, and M3, M4 and its corresponding driving resistor R13, R21, R14, R15, pulse transformer T1 form IGBT pipe buffer circuit, by fast recovery diode D4, D5, D6, D11; Capacitor C 4, C5, C13, C14; Resistance R 10, R11, R17, R18, R19, R23, R24, R26 etc. form IGBT pipe driving pulse rising edge of a pulse trailing edge shaping treatment circuit.This four tunnel pulse does not have through time-delay, isolates and amplifies rear drive IGBT pipe.
6, the metal-oxide-semiconductor isolated drive circuit comprises: metal-oxide-semiconductor buffer circuit and metal-oxide-semiconductor driving pulse rising edge of a pulse trailing edge shaping treatment circuit.MOSFET manages M5, M6, and M7, M8 and its corresponding driving resistor R38, R39, R40, R41, pulse transformer T2 forms the metal-oxide-semiconductor buffer circuit, by fast recovery diode D10, D15, D17, D22; Capacitor C 15, C24, C25, C26; Resistance R 22, R25, R42, R45, R43, R44, R48, R51 etc. form metal-oxide-semiconductor driving pulse rising edge of a pulse trailing edge shaping treatment circuit.This four tunnel pulse is crossed through delay process, isolates and amplifies the rear drive metal-oxide-semiconductor.
Pulse that cross through delay process and no process delay process is driven MOS pipe and IGBT pipe respectively.Make metal-oxide-semiconductor always open-minded in advance, time delayed turn-off than corresponding IGBT pipe.Wherein opening t1 in advance is to be produced automatically by the speed of opening of MOS self characteristic faster than the IGBT pipe, and time delayed turn-off is produced by following described delay circuit.
7, by integrated circuit U3C, U3D, U3E, U3F; Resistance R 20, R37; Capacitor C 12, C22 and diode D9, D14 forms the pulse delay breaking circuit.R37 and R20 equivalence; C22 and C12 equivalence.The product of electric capacity and resistance has determined the time t2 of pulse delay, and this time generally is slightly larger than the fall time and the hangover time sum of IGBT pipe.
Workflow of the present invention specifically comprises:
One, the flow process of the given and feedback of electric current and PWM modulation and output
The given signal one tunnel of the welding electric current that provides by RT2 and RT3 through the anti-phase amplification of integrated circuit U2D after, become negative electric current and give determining voltage signal; Another road is by resistance R 49, and the R50 dividing potential drop is delivered on the digital wash DGM1 after capacitor C 32 filtering, as the demonstration of welding electric current.By R46 and RT1, the current feedback voltage signal compares at error comparison point B point by R36 electric current to determining voltage signal, and its result handles the back by R34 by the pi regulator of compositions such as integrated circuit U2C, and R33 delivers to 5 pin of U1.
Primary side inverter current signal process fast recovery diode D2 by current transformer T4 sampling; D3; D7; the D8 rectification; behind sampling resistor R9 and high-frequency filter capacitor C11, obtain; the dc pulse voltage signal of size of current is once surveyed in reaction, and this signal one route R8 delivers to 16 pin of U1, constitutes current foldback circuit.Unusually 16 pin that increase U1 when the primary side inverter current can obtain a high voltage, and U1 inside is the locking pulse signal immediately, make power supply stop output.Another road isolates through diode D13, after capacitor C 21 filtering, delivers to error comparison point B point through resistance R 36.Also have one the tunnel to deliver to 4 pin of U1 through R30, U2B penetrates subsequently the sawtooth signal of 8 pin of U1 by R12 simultaneously, R27, and C16 behind the resistance-capacitance network that C17 forms, also delivers to 4 pin of U1, is used for making oblique wave compensation for the dc pulse voltage signal of once surveying electric current.The synthetic back of two signals compares in U1 inside with the error signal that 5 pin of U1 are sent here, obtains pwm signal, forms by the dead band, and the phase-locked back of frequency division differs 180 from 14 pin and the 11 pin output phases of U1
o
, and have the pwm signal of certain Dead Time.
Two, the flow process that the time-delay that IGBT manages relative metal-oxide-semiconductor is opened and turn-offed in advance
The realization of logic is opened and is turn-offed in advance in the time-delay that IGBT manages relative metal-oxide-semiconductor, be that the inverter circuit that guarantees this inversion welding/cutting power supply can turn on and off switching device constantly in pulse and taken on by metal-oxide-semiconductor, and the switching device of pulse conduction period by the IGBT pipe take on fully and necessary condition.
Be divided into two-way at E point and F point respectively by 14 pin of integrated circuit U1 and the pwm pulse of 11 pin output, one the tunnel directly by metal-oxide-semiconductor M1, M2, M3, M4 pulse transformer T1 and other elements amplify, isolate, send to respectively after the shaping and drive four IGBT pipes, another road is then passed through respectively by diode D9, resistance R 20, capacitor C 12, integrated circuit U3D, U3E and through by diode D14, resistance R 37, capacitor C 22, integrated circuit U3F, after the U3C delay process by metal-oxide-semiconductor M5, M6, M7, M8 pulse transformer T2 and other elements amplify, isolate, send to respectively after the shaping and drive four metal-oxide-semiconductors.
Three, the flow process of welding/cutting power supply overtemperature prote circuit
Temperature relay TS1 is often opened in one of the outer connection of socket A1.When temperature just often, temperature relay TS1 is that the A point current potential that disconnects is unaffected, normally welding; When the temperature superelevation, temperature relay TS1 closure, the A point is grounded, and current potential vanishing welding/cutting power supply stops output, thereby plays the effect of overtemperature protection.The radiator that temperature relay TS1 lays metal-oxide-semiconductor and IGBT pipe place is on the surface at hot place.
The above only is preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of being done within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1.
A kind of metal-oxide-semiconductor and IGBT pipe mixed bridge-circuit inverter type welding/cutting power supply, it is characterized in that, comprising: be linked in sequence: input EMC circuit, primary side current rectifying and wave filtering circuit, hybrid device inverter circuit, isolating transformer, secondary side current rectifying and wave filtering circuit and master board circuit by current direction; Described electric current enters the hybrid device inverter circuit at master board circuit place; Described hybrid device inverter circuit is connect by four metal-oxide-semiconductors and four IGBT pipe bridges and forms, and four metal-oxide-semiconductors and four IGBT pipes are divided into two groups of metal-oxide-semiconductors and two groups of IGBT pipes respectively; Described master board circuit is to metal-oxide-semiconductor and the orderly respectively four groups of eight-path PWM signals of output of IGBT pipe of described hybrid device inverter circuit, allow the conducting simultaneously of same group metal-oxide-semiconductor and/or IGBT pipe, and allow the metal-oxide-semiconductor of another group and/or IGBT pipe and last group of metal-oxide-semiconductor and/or IGBT pipe between have phase difference the time conducting.
2.
Metal-oxide-semiconductor according to claim 1 and IGBT pipe mixed bridge-circuit inverter type welding/cutting power supply; it is characterized in that; described master board circuit is by the PWM pulse-width modulation circuit; the pulse delay breaking circuit; isolated drive circuit, the given and current feedback circuit of electric current, current foldback circuit; under-voltage protecting circuit, and auxiliary circuit constitutes.
3.
Metal-oxide-semiconductor according to claim 2 and IGBT pipe mixed bridge-circuit inverter type welding/cutting power supply is characterized in that described isolated drive circuit comprises: metal-oxide-semiconductor isolated drive circuit and IGBT pipe isolated drive circuit.
4.
Metal-oxide-semiconductor according to claim 3 and IGBT pipe mixed bridge-circuit inverter type welding/cutting power supply is characterized in that described metal-oxide-semiconductor isolated drive circuit comprises: metal-oxide-semiconductor buffer circuit and metal-oxide-semiconductor driving pulse rising edge of a pulse trailing edge shaping treatment circuit.
5.
Metal-oxide-semiconductor according to claim 3 and IGBT pipe mixed bridge-circuit inverter type welding/cutting power supply is characterized in that, described IGBT pipe isolated drive circuit comprises: IGBT pipe buffer circuit and IGBT pipe driving pulse rising edge of a pulse trailing edge shaping treatment circuit.
6.
According to claim 4 or 5 described metal-oxide-semiconductors and IGBT pipe mixed bridge-circuit inverter type welding/cutting power supply, it is characterized in that described phase difference is 180 o
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102890758A CN101924472B (en) | 2010-09-21 | 2010-09-21 | MOS tube and IGBT tube mixed bridge-circuit inverter type welding/cutting power supply |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102890758A CN101924472B (en) | 2010-09-21 | 2010-09-21 | MOS tube and IGBT tube mixed bridge-circuit inverter type welding/cutting power supply |
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| CN101924472A true CN101924472A (en) | 2010-12-22 |
| CN101924472B CN101924472B (en) | 2012-07-25 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103915425A (en) * | 2012-12-28 | 2014-07-09 | 三菱电机株式会社 | Power semiconductor device |
| CN109839511A (en) * | 2017-11-27 | 2019-06-04 | 中国航空工业集团公司西安航空计算技术研究所 | A kind of tach signal Acquisition Circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040189265A1 (en) * | 2003-03-26 | 2004-09-30 | Rice David A. | Constant current regulator using IGBT's with simplified timing |
| CN101127484A (en) * | 2007-05-23 | 2008-02-20 | 中国科学院电工研究所 | A digital high voltage DC power |
| CN201766521U (en) * | 2010-09-21 | 2011-03-16 | 深圳市华意隆实业发展有限公司 | MOS tube and TGBT tube mixed bridge-inverting welding-cutting power supply |
-
2010
- 2010-09-21 CN CN2010102890758A patent/CN101924472B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040189265A1 (en) * | 2003-03-26 | 2004-09-30 | Rice David A. | Constant current regulator using IGBT's with simplified timing |
| CN101127484A (en) * | 2007-05-23 | 2008-02-20 | 中国科学院电工研究所 | A digital high voltage DC power |
| CN201766521U (en) * | 2010-09-21 | 2011-03-16 | 深圳市华意隆实业发展有限公司 | MOS tube and TGBT tube mixed bridge-inverting welding-cutting power supply |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103915425A (en) * | 2012-12-28 | 2014-07-09 | 三菱电机株式会社 | Power semiconductor device |
| CN109839511A (en) * | 2017-11-27 | 2019-06-04 | 中国航空工业集团公司西安航空计算技术研究所 | A kind of tach signal Acquisition Circuit |
| CN109839511B (en) * | 2017-11-27 | 2021-10-15 | 中国航空工业集团公司西安航空计算技术研究所 | Rotating speed signal acquisition circuit |
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