CN101924161A - Method for manufacturing photodetector and relevant thin film transistor baseplate - Google Patents
Method for manufacturing photodetector and relevant thin film transistor baseplate Download PDFInfo
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- CN101924161A CN101924161A CN2009101490632A CN200910149063A CN101924161A CN 101924161 A CN101924161 A CN 101924161A CN 2009101490632 A CN2009101490632 A CN 2009101490632A CN 200910149063 A CN200910149063 A CN 200910149063A CN 101924161 A CN101924161 A CN 101924161A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a method for manufacturing a photodetector, which comprises the following steps: providing a substrate; depositing a first conducting layer on the substrate; carrying out a first lithography process on the first conducting layer, thereby forming a first patterning conducting layer; forming a rich silicon insulating layer on the first patterning conducting layer; depositing an insulating protective layer; carrying out a second lithography process on the insulating protective layer so as to expose a part of the rich silicon insulating layer; depositing a second conducting layer; and carrying out a third lithography process on the second conducting layer so as to form a second patterning conducting layer, wherein one edge of the rich silicon insulating layer is exposed at the time of performing the second lithography process for the purpose of avoiding occurrence of break line of the second patterning conducting layer at the time of performing the third lithography process.
Description
Technical field
The present invention relates to a kind of manufacture method of OPTICAL SENSORS, relate in particular to a kind of manufacture method and corresponding manufacturing method of film transistor base plate of OPTICAL SENSORS of thin-film transistor (TFT) substrate that is applied to LCD.
Background technology
Progress along with science and technology, LCD is because of it has high image quality, volume is little, in light weight and advantage such as applied range, and be widely used in the various consumption electronic products such as mobile phone, notebook computer, desktop display unit and TV, and replaced traditional cathode-ray tube display gradually and become the main flow of display.
Touch technology is a kind of technology of new human-computer interaction, thereby and touch technology and LCD is combined to make LCD have touch controllable function be a kind of popular trend at present.Whether existing LCD with touch controllable function generally is that OPTICAL SENSORS is arranged in each pixel of thin film transistor base plate, be touched thereby respond to it.
See also Figure 1A-1I, it has disclosed existing a kind of manufacturing method of film transistor base plate with LCD of touch controllable function.Above-mentioned manufacturing method of film transistor base plate may further comprise the steps: at first, shown in Figure 1A, substrate 11 is provided, and substrate 11 is divided into TFT regions 10 and OPTICAL SENSORS zone 20, wherein the thin-film transistor of LCD is arranged in the TFT regions 10, and OPTICAL SENSORS is arranged in the OPTICAL SENSORS zone 20.Wherein, OPTICAL SENSORS can be the surround lighting sensor (Ambient Light Sensor, ALS), in order to the detecting surround lighting to judge whether pixel is touched.Then, on the TFT regions 10 of substrate 11, form the grid 12 of thin-film transistor, wherein the formation of grid 12 can be included in and form a metal level on the substrate 11, above-mentioned metal level is carried out micro-photographing process, and micro-photographing process comprises coating photoresistance, exposure, development, etching and removes this series of steps of photoresistance.Micro-photographing process is not described in detail in this for those skilled in the art's the technology of knowing.
Then, see also Figure 1B, on said structure, form gate insulator 13, amorphous silicon (a-Si) layer 14 and doped polysilicon layer 15.Please consult Fig. 1 C-1D more in the lump, form metal level 16, thereby metal level 16 is carried out first conductive layer 21 of source electrode 17, drain electrode 18 and the OPTICAL SENSORS of micro-photographing process thin-film transistor, thereby doped polysilicon layer 15 is carried out etching formation source region and drain region.Then, see also Fig. 1 E, form Silicon-rich (Si-rich) insulating barrier 22 on first conductive layer 21 of OPTICAL SENSORS, wherein Silicon-rich insulating barrier 22 can be silicon rich oxide layer, silicon rich nitride layer or Silicon-rich nitrogen oxide layer or the like with the luminescent layer as OPTICAL SENSORS.Please consult Fig. 1 F again; on said structure, form insulating protective layer 23; thereby and insulating protective layer 23 carried out micro-photographing process in the drain electrode 18 of thin-film transistor, form first contact hole (indicate), and on the Silicon-rich insulating barrier 22 of OPTICAL SENSORS, form second contact hole (indicating) with the drain electrode 18 that exposes part and the Silicon-rich insulating barrier 22 of part.Then, see also Fig. 1 G, transparency conducting layer 24 be formed on the said structure and be filled in first contact hole and second contact hole in.At last, see also Fig. 1 H-1I, thereby transparency conducting layer 24 is carried out second conductive layer 28 that micro-photographing process forms pixel electrode 19 and OPTICAL SENSORS.
But; because being used to make the transparency conducting layer 24 of OPTICAL SENSORS is to be filled in second contact hole; and the edge of second contact hole has the insulating protective layer 23 that tilting zone 26 shown in Fig. 1 H has inclination; therefore; when transparency conducting layer 24 was carried out micro-photographing process, the photoresistance 25 that is coated in this place can produce (reflow) phenomenon that refluxes because of the insulating protective layer 23 that tilts.The photoresistance 25 that then is coated in this place is thinner, and when transparency conducting layer 24 is carried out etching, thereby 24 easy etched second conductive layers 28 of OPTICAL SENSORS that cause of transparency conducting layer herein break at tilting zone 26 places.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of the OPTICAL SENSORS that is not easy to break.
The present invention also aims to provide a kind of manufacturing method of film transistor base plate that is not easy to break.
The object of the invention to solve the technical problems is to adopt following technical scheme to realize.
The invention provides a kind of manufacture method of OPTICAL SENSORS, it comprises: a substrate is provided; Deposition one first conductive layer on substrate; Thereby first conductive layer is carried out one first micro-photographing process form a first patterning conducting layer; On first patterning conducting layer, form a Silicon-rich insulating barrier; Deposit an insulating protective layer; Insulating protective layer is carried out one second micro-photographing process to expose the Silicon-rich insulating barrier of part; Deposit one second conductive layer; And thereby second conductive layer carried out second conductive layer that one the 3rd micro-photographing process forms a patterning.Wherein, when carrying out second micro-photographing process, expose an edge of Silicon-rich insulating barrier to avoid second conductive layer appearance broken string of patterning when carrying out the 3rd micro-photographing process.
The present invention also provides a kind of manufacturing method of film transistor base plate, and it comprises: a substrate is provided; On substrate, form the grid of a thin-film transistor; Form gate insulator, amorphous silicon layer and doped polysilicon layer successively; Form a metal level, thereby and metal level carried out one first conductive layer that one first micro-photographing process forms source electrode, drain electrode and an OPTICAL SENSORS of thin-film transistor; On first conductive layer of OPTICAL SENSORS, form a Silicon-rich insulating barrier; Form an insulating protective layer, thereby and to insulating protective layer carry out one second micro-photographing process in the drain electrode of thin-film transistor, form a contact hole and expose the part the Silicon-rich insulating barrier; And form a transparency conducting layer, thereby and transparency conducting layer carried out one second conductive layer that one the 3rd micro-photographing process forms a pixel electrode and OPTICAL SENSORS.Wherein, when carrying out second micro-photographing process, expose an edge of Silicon-rich insulating barrier to avoid second conductive layer appearance broken string of OPTICAL SENSORS when carrying out the 3rd micro-photographing process.
Preferably, the distance between the edge of another edge that do not expose of Silicon-rich insulating barrier and insulating protective layer is between 1～10000 micron.
Preferably, the Silicon-rich insulating barrier is silicon rich oxide layer, silicon rich nitride layer or Silicon-rich nitrogen oxide layer.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Figure 1A-1I is the schematic diagram of the manufacturing method of film transistor base plate of existing a kind of LCD with touch controllable function.
Fig. 2 A-2E is the schematic diagram of the manufacture method of a kind of OPTICAL SENSORS of disclosing of one embodiment of the invention.
The schematic diagram of the manufacturing method of film transistor base plate of a kind of LCD with touch controllable function that Fig. 3 A-3I is that another embodiment of the present invention discloses.
10: TFT regions 11: substrate
12: grid 13: gate insulator
14: amorphous silicon layer 15: doped polycrystalline silicon
16: metal level 17: source electrode
18: drain electrode 19: pixel electrode
20: 21: the first conductive layers in OPTICAL SENSORS zone
22: Silicon-rich insulating barrier 23: insulating protective layer
24: transparency conducting layer 25: photoresistance
26: 28: the second conductive layers of tilting zone
110: substrate 120: first patterning conducting layer
130: Silicon-rich insulating barrier 140: insulating protective layer
141: residual insulating protective layer 150: photoresistance
170: photoresistance 200: TFT regions
210: substrate 220: grid
230: gate insulator 240: amorphous silicon layer
250: doped polycrystalline silicon 260: metal level
270: source electrode 280: drain electrode
290: pixel electrode 300: the OPTICAL SENSORS zone
330: insulating protective layer 340: transparency conducting layer
D: between the edge of second conductive layer of patterning and the Silicon-rich insulating barrier edge apart from §
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention,, foundation the present invention proposed ... its embodiment, structure, feature and effect thereof below in conjunction with accompanying drawing and preferred embodiment, describe in detail as after.
See also Fig. 2 A-2E, illustrated the schematic diagram of the manufacture method of a kind of OPTICAL SENSORS that one embodiment of the invention disclosed.The manufacture method of OPTICAL SENSORS of the present invention may further comprise the steps:
See also Fig. 2 A, substrate 110 is provided, deposition first conductive layer and first conductive layer carried out first micro-photographing process and form first patterning conducting layer 120 on substrate 110 forms Silicon-rich insulating barrier 130 again on first patterning conducting layer 120 then.Wherein, substrate 110 is a silicon substrate, and first conductive layer is a metal level.Silicon-rich insulating barrier 130 can be adopted as silicon rich oxide, persilicic nitride or Silicon-rich nitrogen oxide or the like material and make.Silicon-rich insulating barrier 130 also can adopt micro-photographing process and be formed on the first patterning conducting layer 120.
Then, see also Fig. 2 B-2C, on said structure, form insulating protective layer 140, and insulating protective layer 140 is carried out second micro-photographing process to expose the Silicon-rich insulating barrier 130 of part.When being carried out second micro-photographing process, insulating protective layer 140 need expose an edge of Silicon-rich insulating barrier 130.Particularly; when carrying out second micro-photographing process, the photoresistance 150 of coating only covers on the insulating protective layer 140 on Silicon-rich insulating barrier 130 another edges, therefore; when insulating protective layer 140 was carried out etching, the insulating protective layer 140 that covers on the edge of Silicon-rich insulating barrier 130 was etched.That is to say; when carrying out second micro-photographing process; be not to be in insulating protective layer 140, to form contact hole, but the insulating protective layer 140 of Silicon-rich insulating barrier 130 1 sides is all got rid of, thereby expose the Silicon-rich insulating barrier 130 of part and an edge of Silicon-rich insulating barrier 130.
And then deposit second conductive layer 160, deposition second conductive layer 160 on residual insulating protective layer 141 and the Silicon-rich insulating barrier 130 that exposes after carrying out second micro-photographing process wherein.Second conductive layer 160 can adopt the electrically conducting transparent material to make, for example tin indium oxide (ITO) or indium zinc oxide (IZO) or the like.
At last, see also Fig. 2 D-2E, second conductive layer 160 is carried out the 3rd micro-photographing process and form second conductive layer 161 of patterning.Particularly, on second conductive layer 160, apply photoresistance 170, and photoresistance 170 is exposed, develops, utilize 170 pairs second conductive layers of photoresistance 160 after developing to carry out etching, remove residual photoresistor 170 then, thereby form second conductive layer 161 of patterning.Therefore second conductive layer, 161 parts of patterning cover on the residual insulating protective layer 141, and remaining covers on the Silicon-rich insulating barrier 130 that exposes.
In addition, the edge on the residual insulating protective layer 141 and between the edge of the Silicon-rich insulating barrier 130 under the residual insulating protective layer 141 apart from d between 1～10000 micron, thereby make OPTICAL SENSORS can obtain better usefulness.
The manufacture method of disclosed OPTICAL SENSORS; owing to when carrying out that insulating protective layer 140 carried out second micro-photographing process, can get rid of the insulating protective layer 140 in Silicon-rich insulating barrier 130 1 edges; therefore; can not have the insulating protective layer with angle of inclination herein, it does not comprise the zone 26 that Fig. 1 H is disclosed the manufacture method of promptly disclosed OPTICAL SENSORS.When deposition second conductive layer 160 and coating photoresistance 170, can not produce backflow phenomenon herein, second conductive layer 160 herein and the thickness of photoresistance 170 can be not thinner yet, therefore, when second conductive layer 160 is carried out etching, second conductive layer 160 herein can be covered and can not etched away easily by photoresistance 170, thereby has avoided the broken string of second conductive layer of patterning.
In addition, the manufacture method of OPTICAL SENSORS shown in the present does not need to increase extra fabrication steps, and therefore, it can not increase extra manufacturing cost yet.
See also Fig. 3 A-3I, the schematic diagram of the manufacturing method of film transistor base plate of a kind of LCD with touch controllable function that it has illustrated respectively that another embodiment of the present invention disclosed.Manufacturing method of film transistor base plate of the present invention is similar to the existing manufacturing method of film transistor base plate that Figure 1A-1I is disclosed, and its difference is only inequality in the manufacture method of thereon OPTICAL SENSORS.Disclosed manufacturing method of film transistor base plate may further comprise the steps:
See also Fig. 3 A, substrate 210 is provided, and substrate 210 is divided into TFT regions 200 and light sensing zone 300.On the TFT regions 200 of substrate 210, form the grid 220 of thin-film transistor then.
Then, see also Fig. 3 B, on the structure shown in Fig. 3 A, form gate insulator 230, amorphous silicon (a-Si) layer 240 and doped polysilicon layer 250 successively.
Again, see also Fig. 3 C, on the structure shown in Fig. 3 B, form metal level 260.Then, see also Fig. 3 D, thereby metal level 260 is carried out first conductive layer 310 that micro-photographing process forms source electrode 270, drain electrode 280 and the OPTICAL SENSORS of thin-film transistor.
Then, see also Fig. 3 E, on first conductive layer 310 of OPTICAL SENSORS, form Silicon-rich insulating barrier 320 with luminescent layer as OPTICAL SENSORS.
Again; see also Fig. 3 F; on the structure shown in Fig. 3 E, form insulating protective layer 330; thereby and insulating protective layer 330 carried out micro-photographing process in the drain electrode 280 of thin-film transistor, form a contact hole, thereby and the insulating protective layer 330 and the insulating protective layer 330 in Silicon-rich insulating barrier 320 1 edges that etch away on the Silicon-rich insulating barrier 320 of part expose the Silicon-rich insulating barrier 320 of part and an edge of Silicon-rich insulating barrier 320.Wherein, another edge that does not expose of Silicon-rich insulating barrier 320 is near TFT regions 200.
Then, see also Fig. 3 G, on the structure shown in Fig. 3 F, form transparency conducting layer 340, and transparency conducting layer 340 is filled in first contact hole in the drain electrode 280 of thin-film transistor and covers the Silicon-rich insulating barrier 320 that exposes.
At last, see also Fig. 3 H-3I, thereby transparency conducting layer 340 is carried out second conductive layer 341 that micro-photographing process forms pixel electrode 290 and OPTICAL SENSORS.Concrete, shown in Fig. 3 H, on the structure shown in Fig. 3 G, apply photoresistance 350, and photoresistance 350 is exposed, develop.Then, shown in Fig. 3 I, thereby utilize the 350 pairs of transparency conducting layers of photoresistance 340 after developing to carry out second conductive layer 341 that etching forms pixel electrode 290 and OPTICAL SENSORS.
Disclosed manufacturing method of film transistor base plate; it can etch away insulating protective layer 330 on the Silicon-rich insulating barrier 320 of part and the insulating protective layer 330 in Silicon-rich insulating barrier 320 1 edges when making OPTICAL SENSORS; therefore can prevent that photoresistance 350 can not produce backflow phenomenon when transparency conducting layer 340 is carried out micro-photographing process, thereby avoid the broken string of second conductive layer 341.
In addition, disclosed manufacturing method of film transistor base plate is compared with the existing manufacturing method of film transistor base plate that Figure 1A-1I is disclosed, it need not increase any extra fabrication steps, therefore, disclosed manufacturing method of film transistor base plate can't increase extra manufacturing cost.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be not break away from the technical solution of the present invention content, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (10)
1. the manufacture method of an OPTICAL SENSORS is characterized in that it comprises:
One substrate is provided;
Deposition one first conductive layer on this substrate;
Thereby this first conductive layer is carried out one first micro-photographing process form a first patterning conducting layer;
On this first patterning conducting layer, form a Silicon-rich (Si-rich) insulating barrier;
Deposit an insulating protective layer;
This insulating protective layer is carried out one second micro-photographing process to expose this Silicon-rich insulating barrier of part;
Deposit one second conductive layer; And
Thereby this second conductive layer is carried out second conductive layer that one the 3rd micro-photographing process forms a patterning;
Wherein, when carrying out this second micro-photographing process, expose an edge of this Silicon-rich insulating barrier to avoid second conductive layer appearance broken string of this patterning when carrying out the 3rd micro-photographing process.
2. the manufacture method of OPTICAL SENSORS according to claim 1 is characterized in that this first conductive layer is a metal level.
3. the manufacture method of OPTICAL SENSORS according to claim 1 is characterized in that this second conductive layer is a transparency conducting layer.
4. the manufacture method of OPTICAL SENSORS according to claim 3 is characterized in that this second conductive layer adopts tin indium oxide (ITO) or indium zinc oxide (IZO) material to form.
5. the manufacture method of OPTICAL SENSORS according to claim 1 is characterized in that this Silicon-rich insulating barrier is silicon rich oxide layer, silicon rich nitride layer or Silicon-rich nitrogen oxide layer.
6. the manufacture method of OPTICAL SENSORS according to claim 1, it is characterized in that another edge that this Silicon-rich insulating barrier does not expose and near the distance between its edge of this insulating protective layer between 1～10000 micron.
7. the manufacture method of OPTICAL SENSORS according to claim 1 is characterized in that the close thin-film transistor (TFT) in edge that this Silicon-rich insulating barrier does not expose.
8. manufacturing method of film transistor base plate is characterized in that it comprises:
One substrate is provided;
On substrate, form the grid of a thin-film transistor;
Form gate insulator, amorphous silicon layer and doped polysilicon layer successively;
Form a metal level, thereby and this metal level carried out one first conductive layer that one first micro-photographing process forms source electrode, drain electrode and an OPTICAL SENSORS of this thin-film transistor;
On this first conductive layer of this OPTICAL SENSORS, form a Silicon-rich insulating barrier;
Form an insulating protective layer, thereby and to this insulating protective layer carry out one second micro-photographing process in the drain electrode of thin-film transistor, form a contact hole and expose the part this Silicon-rich insulating barrier; And
Form a transparency conducting layer, thereby and transparency conducting layer carried out one second conductive layer that one the 3rd micro-photographing process forms a pixel electrode and this OPTICAL SENSORS;
Wherein, when carrying out this second micro-photographing process, expose an edge of this Silicon-rich insulating barrier to avoid this second conductive layer appearance broken string of this OPTICAL SENSORS when carrying out the 3rd micro-photographing process.
9. manufacturing method of film transistor base plate according to claim 8 is characterized in that distance between the edge of another edge that this Silicon-rich insulating barrier does not expose and this insulating protective layer is between 1～10000 micron.
10. manufacturing method of film transistor base plate according to claim 8 is characterized in that this Silicon-rich insulating barrier is silicon rich oxide layer, silicon rich nitride layer or Silicon-rich nitrogen oxide layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009101490632A CN101924161A (en) | 2009-06-15 | 2009-06-15 | Method for manufacturing photodetector and relevant thin film transistor baseplate |
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| CN2009101490632A CN101924161A (en) | 2009-06-15 | 2009-06-15 | Method for manufacturing photodetector and relevant thin film transistor baseplate |
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| CN101924161A true CN101924161A (en) | 2010-12-22 |
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Cited By (4)
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| CN107240611A (en) * | 2017-06-02 | 2017-10-10 | 京东方科技集团股份有限公司 | A kind of photoelectric detector and preparation method thereof, touch base plate and display panel |
| CN107300812A (en) * | 2017-05-12 | 2017-10-27 | 惠科股份有限公司 | A kind of display panel, the manufacturing method thereof of display panel and display device |
| CN107357101A (en) * | 2017-05-12 | 2017-11-17 | 惠科股份有限公司 | A kind of display panel, the manufacturing method thereof of display panel and display device |
| CN107390406A (en) * | 2017-06-20 | 2017-11-24 | 惠科股份有限公司 | The manufacture method and display device of a kind of display panel, display panel |
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2009
- 2009-06-15 CN CN2009101490632A patent/CN101924161A/en active Pending
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| CN107300812A (en) * | 2017-05-12 | 2017-10-27 | 惠科股份有限公司 | A kind of display panel, the manufacturing method thereof of display panel and display device |
| CN107357101A (en) * | 2017-05-12 | 2017-11-17 | 惠科股份有限公司 | A kind of display panel, the manufacturing method thereof of display panel and display device |
| WO2018205438A1 (en) * | 2017-05-12 | 2018-11-15 | 惠科股份有限公司 | Display panel, manufacturing method therefor and display device |
| CN107240611A (en) * | 2017-06-02 | 2017-10-10 | 京东方科技集团股份有限公司 | A kind of photoelectric detector and preparation method thereof, touch base plate and display panel |
| CN107240611B (en) * | 2017-06-02 | 2019-11-12 | 京东方科技集团股份有限公司 | A kind of photoelectric detector and preparation method thereof, touch base plate and display panel |
| US11217614B2 (en) | 2017-06-02 | 2022-01-04 | Boe Technology Group Co., Ltd. | Photodetector and manufacture method thereof, touch substrate and display panel |
| CN107390406A (en) * | 2017-06-20 | 2017-11-24 | 惠科股份有限公司 | The manufacture method and display device of a kind of display panel, display panel |
| WO2018233239A1 (en) * | 2017-06-20 | 2018-12-27 | 惠科股份有限公司 | Display panel and manufacturing method of display panel |
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Application publication date: 20101222 |